CN119923954A - 等离子体处理装置、电源系统和频率控制方法 - Google Patents

等离子体处理装置、电源系统和频率控制方法 Download PDF

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Publication number
CN119923954A
CN119923954A CN202380049744.XA CN202380049744A CN119923954A CN 119923954 A CN119923954 A CN 119923954A CN 202380049744 A CN202380049744 A CN 202380049744A CN 119923954 A CN119923954 A CN 119923954A
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CN
China
Prior art keywords
frequency
generation source
period
electric power
sub
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380049744.XA
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English (en)
Chinese (zh)
Inventor
舆水地盐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN119923954A publication Critical patent/CN119923954A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CN202380049744.XA 2022-10-07 2023-09-26 等离子体处理装置、电源系统和频率控制方法 Pending CN119923954A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2022-162643 2022-10-07
JP2022162643 2022-10-07
JP2022-178137 2022-11-07
JP2022178137 2022-11-07
PCT/JP2023/034969 WO2024075596A1 (ja) 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法

Publications (1)

Publication Number Publication Date
CN119923954A true CN119923954A (zh) 2025-05-02

Family

ID=90608317

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380049744.XA Pending CN119923954A (zh) 2022-10-07 2023-09-26 等离子体处理装置、电源系统和频率控制方法

Country Status (5)

Country Link
US (1) US20250132129A1 (https=)
JP (2) JP7612949B2 (https=)
KR (2) KR20260006694A (https=)
CN (1) CN119923954A (https=)
WO (1) WO2024075596A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026053764A1 (ja) * 2024-09-05 2026-03-12 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及びプラズマ処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
US12230475B2 (en) * 2018-08-14 2025-02-18 Tokyo Electron Limited Systems and methods of control for plasma processing
US11315757B2 (en) * 2019-08-13 2022-04-26 Mks Instruments, Inc. Method and apparatus to enhance sheath formation, evolution and pulse to pulse stability in RF powered plasma applications

Also Published As

Publication number Publication date
TW202431341A (zh) 2024-08-01
JP7612949B2 (ja) 2025-01-14
WO2024075596A1 (ja) 2024-04-11
JPWO2024075596A1 (https=) 2024-04-11
US20250132129A1 (en) 2025-04-24
KR20250025370A (ko) 2025-02-21
JP2025041838A (ja) 2025-03-26
KR102905047B1 (ko) 2025-12-29
KR20260006694A (ko) 2026-01-13

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