JP7612949B2 - プラズマ処理装置、電源システム、及び周波数制御方法 - Google Patents

プラズマ処理装置、電源システム、及び周波数制御方法 Download PDF

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JP7612949B2
JP7612949B2 JP2024555743A JP2024555743A JP7612949B2 JP 7612949 B2 JP7612949 B2 JP 7612949B2 JP 2024555743 A JP2024555743 A JP 2024555743A JP 2024555743 A JP2024555743 A JP 2024555743A JP 7612949 B2 JP7612949 B2 JP 7612949B2
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high frequency
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JPWO2024075596A5 (https=
JPWO2024075596A1 (https=
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地塩 輿水
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2024555743A 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法 Active JP7612949B2 (ja)

Priority Applications (1)

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JP2024227718A JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

Applications Claiming Priority (5)

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JP2022162643 2022-10-07
JP2022162643 2022-10-07
JP2022178137 2022-11-07
JP2022178137 2022-11-07
PCT/JP2023/034969 WO2024075596A1 (ja) 2022-10-07 2023-09-26 プラズマ処理装置、電源システム、及び周波数制御方法

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JP2024227718A Division JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

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JPWO2024075596A1 JPWO2024075596A1 (https=) 2024-04-11
JPWO2024075596A5 JPWO2024075596A5 (https=) 2024-12-17
JP7612949B2 true JP7612949B2 (ja) 2025-01-14

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JP2024227718A Pending JP2025041838A (ja) 2022-10-07 2024-12-24 プラズマ処理装置、電源システム、及び周波数制御方法

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US (1) US20250132129A1 (https=)
JP (2) JP7612949B2 (https=)
KR (2) KR20260006694A (https=)
CN (1) CN119923954A (https=)
WO (1) WO2024075596A1 (https=)

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* Cited by examiner, † Cited by third party
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WO2026053764A1 (ja) * 2024-09-05 2026-03-12 東京エレクトロン株式会社 プラズマ処理装置、電源システム、及びプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210050185A1 (en) 2019-08-13 2021-02-18 Mks Instruments, Inc. Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications
JP2021534545A (ja) 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5319150B2 (ja) 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021534545A (ja) 2018-08-14 2021-12-09 東京エレクトロン株式会社 プラズマ処理のための制御のシステム及び方法
US20210050185A1 (en) 2019-08-13 2021-02-18 Mks Instruments, Inc. Method And Apparatus To Enhance Sheath Formation, Evolution And Pulse To Pulse Stability In RF Powered Plasma Applications

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TW202431341A (zh) 2024-08-01
CN119923954A (zh) 2025-05-02
WO2024075596A1 (ja) 2024-04-11
JPWO2024075596A1 (https=) 2024-04-11
US20250132129A1 (en) 2025-04-24
KR20250025370A (ko) 2025-02-21
JP2025041838A (ja) 2025-03-26
KR102905047B1 (ko) 2025-12-29
KR20260006694A (ko) 2026-01-13

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