KR20250134065A - Euv 투과막 및 그 가공 방법, 그리고 노광 방법 - Google Patents

Euv 투과막 및 그 가공 방법, 그리고 노광 방법

Info

Publication number
KR20250134065A
KR20250134065A KR1020257008406A KR20257008406A KR20250134065A KR 20250134065 A KR20250134065 A KR 20250134065A KR 1020257008406 A KR1020257008406 A KR 1020257008406A KR 20257008406 A KR20257008406 A KR 20257008406A KR 20250134065 A KR20250134065 A KR 20250134065A
Authority
KR
South Korea
Prior art keywords
layer
euv
nitride
film
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257008406A
Other languages
English (en)
Korean (ko)
Inventor
도시카츠 가시와야
Original Assignee
엔지케이 인슐레이터 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔지케이 인슐레이터 엘티디 filed Critical 엔지케이 인슐레이터 엘티디
Publication of KR20250134065A publication Critical patent/KR20250134065A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
KR1020257008406A 2024-02-29 2024-02-29 Euv 투과막 및 그 가공 방법, 그리고 노광 방법 Pending KR20250134065A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/007654 WO2025182054A1 (ja) 2024-02-29 2024-02-29 Ｅｕｖ透過膜及びその加工方法、並びに露光方法

Publications (1)

Publication Number Publication Date
KR20250134065A true KR20250134065A (ko) 2025-09-09

Family

ID=96881136

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257008406A Pending KR20250134065A (ko) 2024-02-29 2024-02-29 Euv 투과막 및 그 가공 방법, 그리고 노광 방법

Country Status (6)

Country Link
US (1) US20250278032A1 (https=)
EP (1) EP4636488A1 (https=)
JP (1) JPWO2025182054A1 (https=)
KR (1) KR20250134065A (https=)
TW (1) TW202540760A (https=)
WO (1) WO2025182054A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7554368B2 (ja) * 2022-09-15 2024-09-19 日本碍子株式会社 Ｅｕｖ透過膜及びその使用方法、並びに露光方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020098227A (ja) 2018-12-17 2020-06-25 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル
JP6858817B2 (ja) 2014-07-04 2021-04-14 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102366806B1 (ko) * 2015-05-13 2022-02-23 삼성전자주식회사 열 축적을 방지하는 펠리클 및 이를 포함하는 극자외선 리소그래피 장치
KR101813185B1 (ko) * 2016-06-30 2018-01-30 삼성전자주식회사 포토마스크용 펠리클 및 이를 포함하는 노광 장치
JP6944768B2 (ja) * 2016-08-29 2021-10-06 エア・ウォーター株式会社 ペリクルの製造方法
KR102675777B1 (ko) * 2017-07-31 2024-06-18 삼성전자주식회사 포토마스크용 펠리클과 이를 포함하는 레티클 및 포토마스크용 펠리클의 제조방법
JP7606504B2 (ja) * 2019-07-30 2024-12-25 エーエスエムエル ネザーランズ ビー．ブイ． ペリクル膜
KR102781061B1 (ko) * 2021-04-08 2025-03-19 한국전자기술연구원 비정질 탄소를 포함하는 극자외선 노광용 펠리클 및 그의 제조 방법
EP4194948A4 (en) * 2021-10-20 2024-05-01 NGK Insulators, Ltd. EUV TRANSMITTANT FILM
WO2023112330A1 (ja) * 2021-12-17 2023-06-22 日本碍子株式会社 ペリクルの製造に用いられるためのＳｉメンブレン構造体、及びペリクルの製造方法
KR20240111817A (ko) * 2022-03-18 2024-07-17 엔지케이 인슐레이터 엘티디 Euv 투과막의 제조 방법 및 펠리클
JP7372501B1 (ja) * 2022-09-15 2023-10-31 日本碍子株式会社 Ｅｕｖ透過膜

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6858817B2 (ja) 2014-07-04 2021-04-14 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置
JP2020098227A (ja) 2018-12-17 2020-06-25 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル

Also Published As

Publication number Publication date
EP4636488A1 (en) 2025-10-22
TW202540760A (zh) 2025-10-16
WO2025182054A1 (ja) 2025-09-04
JPWO2025182054A1 (https=) 2025-09-04
US20250278032A1 (en) 2025-09-04

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