TW202540760A - Euv穿透膜及其加工方法和曝光方法 - Google Patents

Euv穿透膜及其加工方法和曝光方法

Info

Publication number
TW202540760A
TW202540760A TW114100249A TW114100249A TW202540760A TW 202540760 A TW202540760 A TW 202540760A TW 114100249 A TW114100249 A TW 114100249A TW 114100249 A TW114100249 A TW 114100249A TW 202540760 A TW202540760 A TW 202540760A
Authority
TW
Taiwan
Prior art keywords
euv
layer
nitride
aforementioned
protective layer
Prior art date
Application number
TW114100249A
Other languages
English (en)
Chinese (zh)
Inventor
柏屋俊克
Original Assignee
日商日本碍子股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日本碍子股份有限公司 filed Critical 日商日本碍子股份有限公司
Publication of TW202540760A publication Critical patent/TW202540760A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Laminated Bodies (AREA)
TW114100249A 2024-02-29 2025-01-03 Euv穿透膜及其加工方法和曝光方法 TW202540760A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2024/007654 WO2025182054A1 (ja) 2024-02-29 2024-02-29 Ｅｕｖ透過膜及びその加工方法、並びに露光方法
WOPCT/JP2024/007654 2024-02-29

Publications (1)

Publication Number Publication Date
TW202540760A true TW202540760A (zh) 2025-10-16

Family

ID=96881136

Family Applications (1)

Application Number Title Priority Date Filing Date
TW114100249A TW202540760A (zh) 2024-02-29 2025-01-03 Euv穿透膜及其加工方法和曝光方法

Country Status (6)

Country Link
US (1) US20250278032A1 (https=)
EP (1) EP4636488A1 (https=)
JP (1) JPWO2025182054A1 (https=)
KR (1) KR20250134065A (https=)
TW (1) TW202540760A (https=)
WO (1) WO2025182054A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7554368B2 (ja) * 2022-09-15 2024-09-19 日本碍子株式会社 Ｅｕｖ透過膜及びその使用方法、並びに露光方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016001351A1 (en) 2014-07-04 2016-01-07 Asml Netherlands B.V. Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane
KR102366806B1 (ko) * 2015-05-13 2022-02-23 삼성전자주식회사 열 축적을 방지하는 펠리클 및 이를 포함하는 극자외선 리소그래피 장치
KR101813185B1 (ko) * 2016-06-30 2018-01-30 삼성전자주식회사 포토마스크용 펠리클 및 이를 포함하는 노광 장치
JP6944768B2 (ja) * 2016-08-29 2021-10-06 エア・ウォーター株式会社 ペリクルの製造方法
KR102675777B1 (ko) * 2017-07-31 2024-06-18 삼성전자주식회사 포토마스크용 펠리클과 이를 포함하는 레티클 및 포토마스크용 펠리클의 제조방법
JP2020098227A (ja) 2018-12-17 2020-06-25 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜及びこれを備えたペリクル
JP7606504B2 (ja) * 2019-07-30 2024-12-25 エーエスエムエル ネザーランズ ビー．ブイ． ペリクル膜
KR102781061B1 (ko) * 2021-04-08 2025-03-19 한국전자기술연구원 비정질 탄소를 포함하는 극자외선 노광용 펠리클 및 그의 제조 방법
EP4194948A4 (en) * 2021-10-20 2024-05-01 NGK Insulators, Ltd. EUV TRANSMITTANT FILM
WO2023112330A1 (ja) * 2021-12-17 2023-06-22 日本碍子株式会社 ペリクルの製造に用いられるためのＳｉメンブレン構造体、及びペリクルの製造方法
KR20240111817A (ko) * 2022-03-18 2024-07-17 엔지케이 인슐레이터 엘티디 Euv 투과막의 제조 방법 및 펠리클
JP7372501B1 (ja) * 2022-09-15 2023-10-31 日本碍子株式会社 Ｅｕｖ透過膜

Also Published As

Publication number Publication date
EP4636488A1 (en) 2025-10-22
KR20250134065A (ko) 2025-09-09
WO2025182054A1 (ja) 2025-09-04
JPWO2025182054A1 (https=) 2025-09-04
US20250278032A1 (en) 2025-09-04

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