KR20250119538A - 결정성 산화물 반도체막, 적층 구조체, 및 반도체 장치 - Google Patents

결정성 산화물 반도체막, 적층 구조체, 및 반도체 장치

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Publication number
KR20250119538A
KR20250119538A KR1020257018076A KR20257018076A KR20250119538A KR 20250119538 A KR20250119538 A KR 20250119538A KR 1020257018076 A KR1020257018076 A KR 1020257018076A KR 20257018076 A KR20257018076 A KR 20257018076A KR 20250119538 A KR20250119538 A KR 20250119538A
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South Korea
Prior art keywords
oxide semiconductor
crystalline oxide
semiconductor film
film
plane
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Pending
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KR1020257018076A
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English (en)
Korean (ko)
Inventor
타카히로 사카츠메
Original Assignee
신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR20250119538A publication Critical patent/KR20250119538A/ko
Pending legal-status Critical Current

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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
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    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
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    • H10D12/417—Insulated-gate bipolar transistors [IGBT] having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region
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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020257018076A 2022-12-06 2023-12-01 결정성 산화물 반도체막, 적층 구조체, 및 반도체 장치 Pending KR20250119538A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022195220 2022-12-06
JPJP-P-2022-195220 2022-12-06
PCT/JP2023/043114 WO2024122463A1 (ja) 2022-12-06 2023-12-01 結晶性酸化物半導体膜、積層構造体、及び半導体装置

Publications (1)

Publication Number Publication Date
KR20250119538A true KR20250119538A (ko) 2025-08-07

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KR1020257018076A Pending KR20250119538A (ko) 2022-12-06 2023-12-01 결정성 산화물 반도체막, 적층 구조체, 및 반도체 장치

Country Status (6)

Country Link
EP (1) EP4632797A1 (https=)
JP (1) JPWO2024122463A1 (https=)
KR (1) KR20250119538A (https=)
CN (1) CN120345061A (https=)
TW (1) TW202438708A (https=)
WO (1) WO2024122463A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP2026019629A (ja) * 2024-07-26 2026-02-05 三菱重工業株式会社 光学フィルタ、及び光学フィルタの製造方法

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JP2013058637A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd Ｇａ２Ｏ３系半導体素子
JP2015017027A (ja) 2013-10-17 2015-01-29 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法
JP6876895B2 (ja) 2015-02-25 2021-05-26 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP7016489B2 (ja) 2019-12-16 2022-02-07 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP7265624B2 (ja) 2019-06-28 2023-04-26 日本碍子株式会社 半導体膜

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JP6533982B2 (ja) * 2015-02-25 2019-06-26 株式会社Flosfia 量子井戸構造、積層構造体および半導体装置
JP7159449B2 (ja) * 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法
WO2020261355A1 (ja) * 2019-06-25 2020-12-30 日本碍子株式会社 半導体膜
JP7681039B2 (ja) * 2020-10-08 2025-05-21 日本碍子株式会社 酸化ガリウム単結晶粒子及びその製法
JP7200205B2 (ja) * 2020-12-15 2023-01-06 信越化学工業株式会社 成膜方法

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Publication number Priority date Publication date Assignee Title
JP2013058637A (ja) 2011-09-08 2013-03-28 Tamura Seisakusho Co Ltd Ｇａ２Ｏ３系半導体素子
JP2015017027A (ja) 2013-10-17 2015-01-29 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法
JP6876895B2 (ja) 2015-02-25 2021-05-26 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP7265624B2 (ja) 2019-06-28 2023-04-26 日本碍子株式会社 半導体膜
JP7016489B2 (ja) 2019-12-16 2022-02-07 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置

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Title
카네코 켄타로, 「코런덤 구조 산화갈륨계 혼정 박막의 성장과 물성」, 쿄토대학 박사 논문, 2013년 3월

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