CN120345061A - 结晶性氧化物半导体膜、层叠结构体及半导体装置 - Google Patents

结晶性氧化物半导体膜、层叠结构体及半导体装置

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Publication number
CN120345061A
CN120345061A CN202380083237.8A CN202380083237A CN120345061A CN 120345061 A CN120345061 A CN 120345061A CN 202380083237 A CN202380083237 A CN 202380083237A CN 120345061 A CN120345061 A CN 120345061A
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CN
China
Prior art keywords
oxide semiconductor
crystalline oxide
semiconductor film
peaks
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380083237.8A
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English (en)
Chinese (zh)
Inventor
坂爪崇宽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of CN120345061A publication Critical patent/CN120345061A/zh
Pending legal-status Critical Current

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    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO
    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN202380083237.8A 2022-12-06 2023-12-01 结晶性氧化物半导体膜、层叠结构体及半导体装置 Pending CN120345061A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022195220 2022-12-06
JP2022-195220 2022-12-06
PCT/JP2023/043114 WO2024122463A1 (ja) 2022-12-06 2023-12-01 結晶性酸化物半導体膜、積層構造体、及び半導体装置

Publications (1)

Publication Number Publication Date
CN120345061A true CN120345061A (zh) 2025-07-18

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Country Status (6)

Country Link
EP (1) EP4632797A1 (https=)
JP (1) JPWO2024122463A1 (https=)
KR (1) KR20250119538A (https=)
CN (1) CN120345061A (https=)
TW (1) TW202438708A (https=)
WO (1) WO2024122463A1 (https=)

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JP2026019629A (ja) * 2024-07-26 2026-02-05 三菱重工業株式会社 光学フィルタ、及び光学フィルタの製造方法

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JP5948581B2 (ja) 2011-09-08 2016-07-06 株式会社Flosfia Ｇａ２Ｏ３系半導体素子
JP6152514B2 (ja) 2013-10-17 2017-06-28 株式会社Flosfia 半導体装置及びその製造方法、並びに結晶及びその製造方法
JP6876895B2 (ja) * 2015-02-25 2021-05-26 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP6533982B2 (ja) * 2015-02-25 2019-06-26 株式会社Flosfia 量子井戸構造、積層構造体および半導体装置
JP7159449B2 (ja) * 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法
WO2020261355A1 (ja) * 2019-06-25 2020-12-30 日本碍子株式会社 半導体膜
WO2020261574A1 (ja) * 2019-06-28 2020-12-30 日本碍子株式会社 半導体膜
JP7016489B2 (ja) 2019-12-16 2022-02-07 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP7681039B2 (ja) * 2020-10-08 2025-05-21 日本碍子株式会社 酸化ガリウム単結晶粒子及びその製法
JP7200205B2 (ja) * 2020-12-15 2023-01-06 信越化学工業株式会社 成膜方法

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EP4632797A1 (en) 2025-10-15
WO2024122463A1 (ja) 2024-06-13
KR20250119538A (ko) 2025-08-07
JPWO2024122463A1 (https=) 2024-06-13
TW202438708A (zh) 2024-10-01

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