KR20250088484A - 수지 조성물, 경화물, 반도체 소자 및 드라이 필름 레지스트 - Google Patents

수지 조성물, 경화물, 반도체 소자 및 드라이 필름 레지스트 Download PDF

Info

Publication number
KR20250088484A
KR20250088484A KR1020257009144A KR20257009144A KR20250088484A KR 20250088484 A KR20250088484 A KR 20250088484A KR 1020257009144 A KR1020257009144 A KR 1020257009144A KR 20257009144 A KR20257009144 A KR 20257009144A KR 20250088484 A KR20250088484 A KR 20250088484A
Authority
KR
South Korea
Prior art keywords
resin composition
group
diamine
dianhydride
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257009144A
Other languages
English (en)
Korean (ko)
Inventor
마오 타케다
마이 츠바모토
카즈요시 야마모토
마사유키 이이즈카
Original Assignee
니폰 가야꾸 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니폰 가야꾸 가부시끼가이샤 filed Critical 니폰 가야꾸 가부시끼가이샤
Publication of KR20250088484A publication Critical patent/KR20250088484A/ko
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F222/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
    • C08F222/36Amides or imides
    • C08F222/40Imides, e.g. cyclic imides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • H01L21/02118
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Polymerisation Methods In General (AREA)
KR1020257009144A 2022-10-14 2023-03-30 수지 조성물, 경화물, 반도체 소자 및 드라이 필름 레지스트 Pending KR20250088484A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022165848 2022-10-14
JPJP-P-2022-165848 2022-10-14
PCT/JP2023/013230 WO2024079925A1 (ja) 2022-10-14 2023-03-30 樹脂組成物、硬化物、半導体素子、およびドライフィルムレジスト

Publications (1)

Publication Number Publication Date
KR20250088484A true KR20250088484A (ko) 2025-06-17

Family

ID=90669240

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257009144A Pending KR20250088484A (ko) 2022-10-14 2023-03-30 수지 조성물, 경화물, 반도체 소자 및 드라이 필름 레지스트

Country Status (5)

Country Link
JP (1) JPWO2024079925A1 (https=)
KR (1) KR20250088484A (https=)
CN (1) CN119855851A (https=)
TW (1) TW202415706A (https=)
WO (1) WO2024079925A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1124271A (ja) 1997-06-30 1999-01-29 Kurarianto Japan Kk 高耐熱性放射線感応性レジスト組成物
JP2011199557A (ja) 2010-03-19 2011-10-06 Sony Corp 画像処理装置および画像処理方法
JP2016114287A (ja) 2014-12-15 2016-06-23 シャープ株式会社 加熱調理器
JP2017119361A (ja) 2014-12-26 2017-07-06 荒川化学工業株式会社 樹脂付銅箔、銅張積層板、プリント配線板及び多層配線板
WO2018056466A1 (ja) 2016-09-26 2018-03-29 日立化成株式会社 樹脂組成物、半導体用配線層積層体及び半導体装置
JP2019104843A (ja) 2017-12-13 2019-06-27 Agc株式会社 樹脂組成物、積層体、金属積層板及びプリント配線板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220179310A1 (en) * 2019-04-02 2022-06-09 Nippon Kayaku Kabushiki Kaisha Bismaleimide compound, photosensitive resin composition using same, cured product thereof, and semiconductor element
JP7365574B2 (ja) * 2019-07-29 2023-10-20 三菱瓦斯化学株式会社 マレイミド化合物及びその製造方法、アミド酸化合物及びその製造方法、樹脂組成物、硬化物、樹脂シート、プリプレグ、金属箔張積層板、プリント配線板、封止用材料、繊維強化複合材料、接着剤、並びに半導体装置
CN115702212B (zh) * 2020-09-23 2024-01-12 积水化学工业株式会社 固化性树脂组合物、临时固定材料、以及电子部件的制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1124271A (ja) 1997-06-30 1999-01-29 Kurarianto Japan Kk 高耐熱性放射線感応性レジスト組成物
JP2011199557A (ja) 2010-03-19 2011-10-06 Sony Corp 画像処理装置および画像処理方法
JP2016114287A (ja) 2014-12-15 2016-06-23 シャープ株式会社 加熱調理器
JP2017119361A (ja) 2014-12-26 2017-07-06 荒川化学工業株式会社 樹脂付銅箔、銅張積層板、プリント配線板及び多層配線板
WO2018056466A1 (ja) 2016-09-26 2018-03-29 日立化成株式会社 樹脂組成物、半導体用配線層積層体及び半導体装置
JP2019104843A (ja) 2017-12-13 2019-06-27 Agc株式会社 樹脂組成物、積層体、金属積層板及びプリント配線板

Also Published As

Publication number Publication date
JPWO2024079925A1 (https=) 2024-04-18
TW202415706A (zh) 2024-04-16
WO2024079925A1 (ja) 2024-04-18
CN119855851A (zh) 2025-04-18

Similar Documents

Publication Publication Date Title
CN110028670A (zh) 低介电损耗负性光敏聚酰胺酸酯树脂、树脂组合物、其制备方法及应用
JP2021021027A (ja) マレイミド化合物及びその製造方法、アミド酸化合物及びその製造方法、樹脂組成物、硬化物、樹脂シート、プリプレグ、金属箔張積層板、プリント配線板、封止用材料、繊維強化複合材料、接着剤、並びに半導体装置
KR102479615B1 (ko) 수지 조성물, 수지 시트, 다층 프린트 배선판, 및 반도체 장치
TWI841812B (zh) 化合物及其製造方法、樹脂組成物、樹脂片、多層印刷電路板、以及半導體裝置
JP7298798B2 (ja) 樹脂組成物、樹脂シート、多層プリント配線板、及び半導体装置
WO2023210038A1 (ja) ビスマレイミド化合物、それを用いた樹脂組成物、その硬化物及び半導体素子
JP7291297B2 (ja) 樹脂組成物、樹脂シート、多層プリント配線板、及び半導体装置
JP7834718B2 (ja) 硬化樹脂組成物とその硬化物
TW202415705A (zh) 樹脂組成物、硬化物、半導體元件及乾膜抗蝕劑
JP7191276B1 (ja) 樹脂組成物、硬化物、樹脂シート、プリプレグ、金属箔張積層板、多層プリント配線板、封止用材料、繊維強化複合材料、接着剤及び半導体装置
TWI836473B (zh) 樹脂組成物、樹脂片、多層印刷配線板、及半導體裝置
KR20250088484A (ko) 수지 조성물, 경화물, 반도체 소자 및 드라이 필름 레지스트
WO2024079924A1 (ja) 樹脂組成物、樹脂シート、多層プリント配線板、及び半導体装置
KR20250087531A (ko) 수지 조성물, 경화물, 반도체 소자 및 드라이 필름 레지스트
TWI922798B (zh) 樹脂組成物、樹脂片材、多層印刷配線板、及半導體裝置
WO2025192495A1 (ja) ビスマレイミド化合物、それを用いた感光性樹脂組成物、その硬化物、半導体素子及びドライフィルムレジスト
WO2025164521A1 (ja) ビスマレイミド化合物、それを用いた樹脂組成物、その硬化物、半導体素子およびドライフィルムレジスト
CN120936641A (zh) 热硬化性马来酰亚胺树脂组合物和使用此的片状或膜状组合物、接着剂组合物、底漆组合物、基板用组合物、涂覆材组合物及半导体装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13 Application amended

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P13-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000