KR20240108393A - 광 검출 장치 및 전자 기기 - Google Patents

광 검출 장치 및 전자 기기 Download PDF

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Publication number
KR20240108393A
KR20240108393A KR1020247015183A KR20247015183A KR20240108393A KR 20240108393 A KR20240108393 A KR 20240108393A KR 1020247015183 A KR1020247015183 A KR 1020247015183A KR 20247015183 A KR20247015183 A KR 20247015183A KR 20240108393 A KR20240108393 A KR 20240108393A
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KR
South Korea
Prior art keywords
region
semiconductor layer
photoelectric conversion
light
separation
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Pending
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KR1020247015183A
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English (en)
Korean (ko)
Inventor
교헤이 미즈타
요시키 에비코
야스후미 미요시
겐지 다케오
도키히사 가네구치
호쿠토 미키
요시키 시라스
다다마사 시오야마
도시히코 하야시
나오유키 사토
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20240108393A publication Critical patent/KR20240108393A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H01L27/1463—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • H01L27/1461—
    • H01L27/14612—
    • H01L27/14623—
    • H01L27/14629—
    • H01L27/14636—
    • H01L27/14643—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020247015183A 2021-11-26 2022-11-25 광 검출 장치 및 전자 기기 Pending KR20240108393A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021191629 2021-11-26
JPJP-P-2021-191629 2021-11-26
PCT/JP2022/043620 WO2023095893A1 (ja) 2021-11-26 2022-11-25 光検出装置及び電子機器

Publications (1)

Publication Number Publication Date
KR20240108393A true KR20240108393A (ko) 2024-07-09

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KR1020247015183A Pending KR20240108393A (ko) 2021-11-26 2022-11-25 광 검출 장치 및 전자 기기

Country Status (6)

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US (1) US20250006764A1 (https=)
JP (1) JPWO2023095893A1 (https=)
KR (1) KR20240108393A (https=)
CN (1) CN118103983A (https=)
DE (1) DE112022005653T5 (https=)
WO (1) WO2023095893A1 (https=)

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Publication number Priority date Publication date Assignee Title
KR102950629B1 (ko) * 2020-11-10 2026-04-13 삼성전자주식회사 이미지 센서
WO2025142948A1 (ja) * 2023-12-25 2025-07-03 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2019214874A (ja) 2018-06-13 2019-12-19 前田建設工業株式会社 シールドセグメントの接続構造及び接続方法

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JP5810575B2 (ja) * 2011-03-25 2015-11-11 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2015082510A (ja) * 2013-10-21 2015-04-27 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
JP2020027884A (ja) * 2018-08-13 2020-02-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US12389695B2 (en) * 2019-02-20 2025-08-12 Sony Semiconductor Solutions Corporation Imaging device
TWI858001B (zh) * 2019-02-25 2024-10-11 日商索尼半導體解決方案公司 固態攝像裝置及電子機器
JP2021027276A (ja) * 2019-08-08 2021-02-22 キヤノン株式会社 光電変換装置および機器
KR102810494B1 (ko) * 2019-10-30 2025-05-22 소니 세미컨덕터 솔루션즈 가부시키가이샤 수광 소자, 거리 측정 모듈, 및, 전자 기기
JP2021114538A (ja) * 2020-01-20 2021-08-05 ソニーセミコンダクタソリューションズ株式会社 撮像素子および撮像装置
JP2021153161A (ja) * 2020-03-25 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、及び、固体撮像装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019214874A (ja) 2018-06-13 2019-12-19 前田建設工業株式会社 シールドセグメントの接続構造及び接続方法

Also Published As

Publication number Publication date
CN118103983A (zh) 2024-05-28
JPWO2023095893A1 (https=) 2023-06-01
US20250006764A1 (en) 2025-01-02
WO2023095893A1 (ja) 2023-06-01
DE112022005653T5 (de) 2024-09-19

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