KR20240064701A - 레지스트 패턴을 형성하는 방법, 반도체 장치를 제조하는 방법, 기판 처리 장치, 및 기억 매체 - Google Patents

레지스트 패턴을 형성하는 방법, 반도체 장치를 제조하는 방법, 기판 처리 장치, 및 기억 매체 Download PDF

Info

Publication number
KR20240064701A
KR20240064701A KR1020247012401A KR20247012401A KR20240064701A KR 20240064701 A KR20240064701 A KR 20240064701A KR 1020247012401 A KR1020247012401 A KR 1020247012401A KR 20247012401 A KR20247012401 A KR 20247012401A KR 20240064701 A KR20240064701 A KR 20240064701A
Authority
KR
South Korea
Prior art keywords
radiation
group
resist
film
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247012401A
Other languages
English (en)
Korean (ko)
Inventor
세이지 나가하라
콩케 디인
마코토 무라마츠
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20240064701A publication Critical patent/KR20240064701A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H01L21/0273—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020247012401A 2021-09-27 2022-09-13 레지스트 패턴을 형성하는 방법, 반도체 장치를 제조하는 방법, 기판 처리 장치, 및 기억 매체 Pending KR20240064701A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021156963 2021-09-27
JPJP-P-2021-156963 2021-09-27
PCT/JP2022/034283 WO2023048029A1 (ja) 2021-09-27 2022-09-13 レジストパターンを形成する方法、半導体装置を製造する方法、基板処理装置、及び記憶媒体

Publications (1)

Publication Number Publication Date
KR20240064701A true KR20240064701A (ko) 2024-05-13

Family

ID=85720626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247012401A Pending KR20240064701A (ko) 2021-09-27 2022-09-13 레지스트 패턴을 형성하는 방법, 반도체 장치를 제조하는 방법, 기판 처리 장치, 및 기억 매체

Country Status (6)

Country Link
US (1) US20240126175A1 (https=)
JP (2) JP7766699B2 (https=)
KR (1) KR20240064701A (https=)
CN (1) CN117940853A (https=)
TW (1) TW202321830A (https=)
WO (1) WO2023048029A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022191199A (ja) * 2021-06-15 2022-12-27 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
TW202433168A (zh) * 2022-10-20 2024-08-16 日商東京威力科創股份有限公司 基板處理方法及基板處理裝置
WO2025142528A1 (ja) * 2023-12-25 2025-07-03 東京エレクトロン株式会社 レジストパターンを形成する方法、及び処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200064733A1 (en) 2014-10-23 2020-02-27 Inpria Corporation Organometallic solution based high resolution patterning compositions and corresponding methods
JP2020101593A (ja) 2018-12-19 2020-07-02 東京エレクトロン株式会社 レジスト組成物およびレジストパターン形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11162844A (ja) * 1997-09-25 1999-06-18 Toshiba Corp パターン形成方法
JP6809843B2 (ja) * 2015-08-20 2021-01-06 国立大学法人大阪大学 パターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200064733A1 (en) 2014-10-23 2020-02-27 Inpria Corporation Organometallic solution based high resolution patterning compositions and corresponding methods
JP2020101593A (ja) 2018-12-19 2020-07-02 東京エレクトロン株式会社 レジスト組成物およびレジストパターン形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. Micro/Nanolith. MEMS MOEMS 16(2), 023510(Apr-Jun 2017)

Also Published As

Publication number Publication date
JP7766699B2 (ja) 2025-11-10
WO2023048029A1 (ja) 2023-03-30
CN117940853A (zh) 2024-04-26
JPWO2023048029A1 (https=) 2023-03-30
TW202321830A (zh) 2023-06-01
US20240126175A1 (en) 2024-04-18
JP2026003053A (ja) 2026-01-08

Similar Documents

Publication Publication Date Title
KR20240064701A (ko) 레지스트 패턴을 형성하는 방법, 반도체 장치를 제조하는 방법, 기판 처리 장치, 및 기억 매체
KR102052032B1 (ko) 레지스트 적용에서 광산 발생제로서의 술폰산 유도체 화합물
JP2501292B2 (ja) 酸感応ポリマおよびホトレジスト構造の作成方法
WO2012014700A1 (ja) パターン形成方法及びポリマーアロイ下地材料
JP4410977B2 (ja) 化学増幅レジスト材料及びそれを用いたパターニング方法
TWI736961B (zh) 半導體裝置的製造方法
TWI849282B (zh) 在光阻層中形成圖案的方法、製造半導體裝置的方法及光阻組成物
JP2022184974A (ja) レジスト用途の光酸発生剤としての環状スルホン酸エステル化合物
CN110554568B (zh) 半导体装置的制造方法
JP7837965B2 (ja) フォトレジスト組成物、レジストパターンを形成する方法、半導体装置を製造する方法、及び基板処理装置
KR20250142134A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP3973151B2 (ja) 化学増幅型ポジ型レジスト組成物
JP7624532B2 (ja) レジスト用途における光酸発生剤としてのオキサチアニウムイオン含有スルホン酸誘導体化合物
KR20250032970A (ko) 레지스트 패턴을 형성하는 방법, 반도체 장치를 제조하는 방법, 기판 처리 장치, 및 기억 매체
KR102902557B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102908018B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR102957909B1 (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP4677423B2 (ja) 電子ベース・リソグラフィのための高感度レジスト組成物
KR20250074609A (ko) 광 개시제 통합형 클러스터, 이의 제조방법, 및 이를 이용한 광 패터닝 방법
KR20240025956A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
KR20240025955A (ko) 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법
JP2006512600A (ja) 電子ベース・リソグラフィのための高感度レジスト組成物
JP2026048612A (ja) 金属含有フォトレジスト用現像液組成物、およびこれを用いた現像段階を含むパターン形成方法
JP2647065B2 (ja) パターン形成方法
JPH10111570A (ja) 感放射線組成物およびそれを用いたパタン形成方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000