KR20240038091A - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치 Download PDF

Info

Publication number
KR20240038091A
KR20240038091A KR1020247007093A KR20247007093A KR20240038091A KR 20240038091 A KR20240038091 A KR 20240038091A KR 1020247007093 A KR1020247007093 A KR 1020247007093A KR 20247007093 A KR20247007093 A KR 20247007093A KR 20240038091 A KR20240038091 A KR 20240038091A
Authority
KR
South Korea
Prior art keywords
plasma
substrate
processing
gas
liquid
Prior art date
Application number
KR1020247007093A
Other languages
English (en)
Korean (ko)
Inventor
슈이치 시바타
다카아키 이시즈
나오토 후지타
Original Assignee
가부시키가이샤 스크린 홀딩스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 스크린 홀딩스 filed Critical 가부시키가이샤 스크린 홀딩스
Publication of KR20240038091A publication Critical patent/KR20240038091A/ko

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247007093A 2021-09-09 2022-05-19 기판 처리 방법 및 기판 처리 장치 KR20240038091A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-146774 2021-09-09
JP2021146774A JP2023039584A (ja) 2021-09-09 2021-09-09 基板処理方法および基板処理装置
PCT/JP2022/020799 WO2023037663A1 (ja) 2021-09-09 2022-05-19 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
KR20240038091A true KR20240038091A (ko) 2024-03-22

Family

ID=85506314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247007093A KR20240038091A (ko) 2021-09-09 2022-05-19 기판 처리 방법 및 기판 처리 장치

Country Status (5)

Country Link
JP (1) JP2023039584A (ja)
KR (1) KR20240038091A (ja)
CN (1) CN117916861A (ja)
TW (1) TWI843112B (ja)
WO (1) WO2023037663A1 (ja)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088208A (ja) 2018-11-27 2020-06-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624347B2 (ja) * 1990-01-31 1997-06-25 松下電子工業株式会社 レジストの除去方法および除去装置
JPH09275097A (ja) * 1996-04-02 1997-10-21 Sony Corp 半導体製造装置及び半導体製造方法
JP4488780B2 (ja) * 2003-05-28 2010-06-23 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2005142367A (ja) * 2003-11-06 2005-06-02 Sekisui Chem Co Ltd 膜剥離方法
US7632756B2 (en) * 2004-08-26 2009-12-15 Applied Materials, Inc. Semiconductor processing using energized hydrogen gas and in combination with wet cleaning
JP2006156486A (ja) * 2004-11-25 2006-06-15 Tokyo Electron Ltd 基板処理方法および半導体装置の製造方法
JP2009238868A (ja) * 2008-03-26 2009-10-15 Oki Semiconductor Co Ltd マスクパターンの形成方法
US10510527B2 (en) * 2013-02-01 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Single wafer cleaning tool with H2SO4 recycling
JP7208814B2 (ja) * 2019-02-13 2023-01-19 株式会社Ｓｃｒｅｅｎホールディングス 生成装置、基板処理装置、及び基板処理方法
JP7340396B2 (ja) * 2019-09-24 2023-09-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
KR102387278B1 (ko) * 2020-02-18 2022-04-18 세메스 주식회사 기판 처리 장치

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088208A (ja) 2018-11-27 2020-06-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
TW202312271A (zh) 2023-03-16
WO2023037663A1 (ja) 2023-03-16
TWI843112B (zh) 2024-05-21
CN117916861A (zh) 2024-04-19
JP2023039584A (ja) 2023-03-22

Similar Documents

Publication Publication Date Title
JP5782279B2 (ja) 基板処理方法および基板処理装置
JP2011204944A (ja) 基板処理装置および基板処理方法
US20180182649A1 (en) Substrate processing device, substrate processing method, and substrate processing system
JP7233294B2 (ja) 基板処理方法、半導体製造方法、および、基板処理装置
JP6593591B2 (ja) 基板処理方法
JP2009267101A (ja) 基板処理装置
KR20100055682A (ko) 기판 처리 장치 및 방법
KR20240038091A (ko) 기판 처리 방법 및 기판 처리 장치
TWI826946B (zh) 基板處理方法以及基板處理裝置
JP2019057600A (ja) 基板処理方法および基板処理装置
WO2023042487A1 (ja) 基板処理装置および基板処理方法
JP2013201235A (ja) ヒータ洗浄方法
WO2022181604A1 (ja) 基板処理方法および基板処理装置
WO2023127217A1 (ja) 基板処理方法および基板処理装置
JP2572568B2 (ja) アッシング方法
JP6640630B2 (ja) 基板処理装置および基板処理方法
JP7241599B2 (ja) 基板処理装置
KR20200105595A (ko) 기판 처리 장치 및 방법
WO2023106012A1 (ja) 基板処理装置および基板処理方法
JP2554857B2 (ja) アツシング装置
JP6740359B2 (ja) 基板処理方法および基板処理装置
WO2023008039A1 (ja) 基板処理装置および基板処理方法
WO2022181596A1 (ja) 基板把持機構および基板処理装置
TW202303673A (zh) 基板處理方法、電漿產生裝置及電漿產生裝置之設計方法
TW202414571A (zh) 基板處理方法及基板處理裝置