KR20240001312A - 레지스트패턴 형성방법 - Google Patents

레지스트패턴 형성방법 Download PDF

Info

Publication number
KR20240001312A
KR20240001312A KR1020237028753A KR20237028753A KR20240001312A KR 20240001312 A KR20240001312 A KR 20240001312A KR 1020237028753 A KR1020237028753 A KR 1020237028753A KR 20237028753 A KR20237028753 A KR 20237028753A KR 20240001312 A KR20240001312 A KR 20240001312A
Authority
KR
South Korea
Prior art keywords
resist
film
substrate
group
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237028753A
Other languages
English (en)
Korean (ko)
Inventor
슌 쿠보데라
šœ 쿠보데라
타카히로 키시오카
토키오 니시타
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20240001312A publication Critical patent/KR20240001312A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020237028753A 2021-04-26 2022-04-25 레지스트패턴 형성방법 Pending KR20240001312A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021074152 2021-04-26
JPJP-P-2021-074152 2021-04-26
PCT/JP2022/018653 WO2022230790A1 (ja) 2021-04-26 2022-04-25 レジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20240001312A true KR20240001312A (ko) 2024-01-03

Family

ID=83847242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237028753A Pending KR20240001312A (ko) 2021-04-26 2022-04-25 레지스트패턴 형성방법

Country Status (6)

Country Link
US (1) US20240219834A1 (https=)
JP (1) JPWO2022230790A1 (https=)
KR (1) KR20240001312A (https=)
CN (1) CN117178231A (https=)
TW (1) TWI910343B (https=)
WO (1) WO2022230790A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202438576A (zh) 2023-03-17 2024-10-01 日商日產化學股份有限公司 ｉ射線微影用之含矽之光阻下層膜形成用組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006154570A (ja) 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61243447A (ja) * 1985-04-22 1986-10-29 Asahi Chem Ind Co Ltd パタ−ン形成方法
JPH06120645A (ja) * 1992-03-31 1994-04-28 Toray Ind Inc ポリイミド・パターンの形成方法
JP6139225B2 (ja) * 2013-04-04 2017-05-31 旭化成株式会社 パターン付き基材及びその製造方法
JP2014241183A (ja) * 2013-05-13 2014-12-25 旭化成イーマテリアルズ株式会社 ドライエッチング用積層体、モールドの製造方法及びモールド
US12366804B2 (en) * 2019-06-17 2025-07-22 Nissan Chemical Corporation Composition containing a heterocyclic compound having a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006154570A (ja) 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法

Also Published As

Publication number Publication date
TW202307571A (zh) 2023-02-16
CN117178231A (zh) 2023-12-05
JPWO2022230790A1 (https=) 2022-11-03
WO2022230790A1 (ja) 2022-11-03
US20240219834A1 (en) 2024-07-04
TWI910343B (zh) 2026-01-01

Similar Documents

Publication Publication Date Title
JP7610518B2 (ja) 改善された貯蔵寿命を有するハードマスク及び充填材料として有用な無機酸化物成分及びアルキニルオキシ置換スピンオン炭素成分を含むスピンオン組成物
CN108388079B (zh) 抗蚀剂垫层组成物和使用所述组成物形成图案的方法
JP5327217B2 (ja) 縮合芳香族環を含む反射防止膜組成物
US7989144B2 (en) Antireflective coating composition
KR101163113B1 (ko) 유황 원자를 함유하는 반사 방지막
US12147160B2 (en) Resist underlayer film material, patterning process, and method for forming resist underlayer film
KR102815273B1 (ko) 유기막 형성용 평탄화제, 유기막 형성용 조성물, 유기막 형성 방법 및 패턴 형성 방법
CN101370849A (zh) 具有抗反射性和高碳含量的聚合物及含有该聚合物的硬掩模组合物以及形成图案化材料层的方法
KR100816735B1 (ko) 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스
KR20110084901A (ko) 융합 방향족 고리를 포함하는 반사방지 코팅 조성물
KR102493736B1 (ko) 레지스트 하층막 재료, 패턴 형성 방법, 및 레지스트 하층막 형성 방법
KR102808973B1 (ko) 디시아노스티릴기를 갖는 복소환 화합물을 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물
KR102592573B1 (ko) 디시아노스티릴기를 포함하는 웨트에칭가능한 레지스트 하층막 형성 조성물
KR101226050B1 (ko) 이소시아눌산 화합물과 안식향산 화합물의 반응 생성물을 포함하는 반사방지막 형성 조성물
KR20240001312A (ko) 레지스트패턴 형성방법
JP7416062B2 (ja) レジスト下層膜形成組成物
KR20170077025A (ko) 레지스트 하층막 형성용 조성물 및 레지스트 패턴의 형성방법
KR100836675B1 (ko) 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스
KR101262445B1 (ko) 흡광제 및 이를 포함하는 유기 반사 방지막 조성물
KR102777079B1 (ko) 레지스트 하층막 형성 조성물
JP2026004689A (ja) 有機膜形成用組成物用重合体及びその製造方法、並びに該重合体を用いた有機膜形成用組成物、該組成物を用いた有機膜形成方法及びパターン形成方法
KR20260025746A (ko) 유기막 형성용 조성물, 유기막 형성 방법, 패턴 형성 방법, 및 중합체
JP2026041942A (ja) レジスト下層膜形成組成物
WO2024106454A1 (ja) クルクミン誘導体を有するレジスト下層膜形成用組成物

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D21 Rejection of application intended

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D21-EXM-PE0902 (AS PROVIDED BY THE NATIONAL OFFICE)

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13 Pre-grant limitation requested

Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11 Amendment of application requested

Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE)

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000