Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
  • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
  • G03F7/031—Organic compounds not covered by group G03F7/029
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor
  • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/38—Treatment before imagewise removal, e.g. prebaking
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
  • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
  • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
  • H05K3/061—Etching masks
  • H05K3/064—Photoresists

Definitions

• the present invention relates to a resist pattern forming method, a resist patterned substrate manufacturing method, a semiconductor device manufacturing method, and a resist pattern standing wave reducing method.
• a lithography process is widely known in which a resist underlayer film is provided between a substrate and a resist film formed thereon to form a resist pattern with a desired shape.
• wiring processes post-processes
• metal substrates such as copper are processed by lithography processes.
• Patent Document 1 discloses a method for manufacturing a resist pattern and a conductor pattern.
• a resist underlayer film with high film thickness uniformity is required in order to reduce the etching load.
• film thickness uniformity can be improved by thinning the resist underlayer film, reflection from the substrate cannot be sufficiently suppressed, and there is a problem that a standing wave is generated in the resist pattern of the upper layer. .
• the present invention includes the following.
• a method for manufacturing a substrate with a resist pattern A step of subjecting a substrate containing a metal on its surface to oxidation treatment to form a metal oxide film (or a film of said metal oxide) on the substrate surface; a step of applying a resist onto the metal oxide film and baking it to form a resist film; A method of manufacturing a substrate with a resist pattern, comprising: exposing a substrate, preferably a semiconductor substrate, coated with the metal oxide film and the resist; and developing and patterning the resist film after the exposure.
• a method for manufacturing a substrate with a resist pattern A resist underlayer film-forming composition is applied to a substrate containing a metal on the surface, and then heated in the presence of oxygen to form a laminated film having a resist underlayer film on a metal oxide film (or an oxide of the metal on the substrate). and a resist underlayer film thereon). a step of applying a resist onto the resist underlayer film and baking it to form a resist film;
• a method for manufacturing a substrate with a resist pattern comprising the steps of exposing the resist underlayer film and the substrate coated with the resist, preferably a semiconductor substrate, and developing and patterning the resist film after the exposure.
• a 1 to A 3 are each independently a direct bond or an optionally substituted alkylene group having 1 to 6 carbon atoms
• B 1 to B 3 each independently represent a direct bond, an ether bond, a thioether bond or an ester bond
• R 4 to R 12 each independently represent a hydrogen atom, a methyl group or an ethyl group
• Z 1 to Z 3 represent formula (II) below:
• n Xs each independently represent an alkyl group, a hydroxyl group, an alkoxy group, an alkoxycarbonyl group, a halogen atom, a cyano group or a nitro group
• R represents a hydrogen atom, an alkyl group or an arylene group
• Y represents an ether bond, a thioether bond
• a method for manufacturing a semiconductor device a step of subjecting a semiconductor substrate containing a metal on its surface to an oxidation treatment to form a metal oxide film (or a film of said metal oxide) on the substrate surface; a step of applying a resist onto the metal oxide film and baking it to form a resist film; A method of manufacturing a semiconductor device, comprising: exposing a semiconductor substrate coated with the metal oxide film and the resist; and developing and patterning the exposed resist film.
• a method for manufacturing a semiconductor device comprising: A resist underlayer film-forming composition is applied to a semiconductor substrate containing a metal on the surface, and then heated in the presence of oxygen to form a laminated film having a resist underlayer film on a metal oxide film (or an oxidation of the metal on the substrate). a step of forming a laminate having a material film and a resist underlayer film thereon; a step of applying a resist onto the resist underlayer film and baking it to form a resist film; A method of manufacturing a semiconductor device, comprising: exposing the resist underlayer film and the semiconductor substrate coated with the resist; and developing and patterning the resist film after the exposure.
• a resist pattern standing wave reduction method comprising: A step of subjecting a substrate containing a metal on its surface, preferably a semiconductor substrate, to oxidation treatment to form a metal oxide film (or a film of said metal oxide) on the substrate surface; a step of applying a resist onto the metal oxide film and baking it to form a resist film;
• a standing wave reduction method for a resist pattern comprising: exposing a substrate, preferably a semiconductor substrate, coated with the metal oxide film and the resist; and developing and patterning the exposed resist film.
• a resist pattern standing wave reduction method comprising: A resist underlayer film-forming composition is applied to a substrate containing a metal on its surface, preferably a semiconductor substrate, and then heated in the presence of oxygen to form a laminated film having a resist underlayer film on a metal oxide film (or on the substrate). forming a laminate having a film of the metal oxide and a resist underlayer film thereon; a step of applying a resist onto the resist underlayer film and baking it to form a resist film; A standing wave reduction method for a resist pattern, comprising: exposing the resist underlayer film and the substrate coated with the resist, preferably a semiconductor substrate; and developing and patterning the resist film after exposure.
• a metal oxide film (eg, copper oxide film) exhibits a high n/k (refractive index/extinction coefficient) value for i-line (365 nm), for example. Therefore, in the lithography process in semiconductor device manufacturing, by forming a metal oxide film (for example, copper oxide) on the surface of a semiconductor substrate in advance, or by forming a laminated structure of a metal oxide film (for example, copper oxide) and a resist underlayer film, By reducing the exposure reflectance from the substrate, it is possible to reduce standing waves (defects due to reflection) in the resist pattern and obtain a good rectangular resist pattern on the substrate (for example, a copper substrate). rice field.
• a metal oxide film for example, copper oxide
• a metal oxide film for example, copper oxide
• a resist underlayer film By reducing the exposure reflectance from the substrate, it is possible to reduce standing waves (defects due to reflection) in the resist pattern and obtain a good rectangular resist pattern on the substrate (for example, a copper substrate). rice field.
• a substrate with a resist pattern having a good shape and a semiconductor device manufactured using the resist pattern can be manufactured.
• the method for producing a substrate with a resist pattern of the present invention comprises: a step of subjecting a substrate containing a metal on its surface to oxidation treatment to form a metal oxide film on the surface of the substrate; a step of applying a resist onto the metal oxide film and baking it to form a resist film; A method for manufacturing a substrate with a resist pattern, comprising: exposing a substrate, preferably a semiconductor substrate, coated with the metal oxide film and the resist; and developing and patterning the exposed resist film.
• the method for producing a substrate with a resist pattern of the present invention comprises: A step of applying a resist underlayer film-forming composition to a substrate containing a metal on its surface and then heating in the presence of oxygen to form a laminated film in which a resist underlayer film exists on a metal oxide film; a step of applying a resist onto the resist underlayer film and baking it to form a resist film;
• the method may include a step of exposing the resist underlayer film and the substrate coated with the resist, preferably a semiconductor substrate, and a step of developing and patterning the resist film after the exposure.
• a standing wave of the resist pattern may be reduced.
• Standing wave (wavy, standing wave) is reduced, compared with the case where the metal oxide film is not formed on the substrate surface, the standing wave of the resist pattern produced by the method of the present invention clearly can be determined from the fact that In order to reduce the standing wave, the "standing ratio S", which is an index for quantifying the standing wave and is represented by the following formula, described in Japanese Patent Application Laid-Open No. 2000-506288, for example, is decreased.
• the reflectance calculation result of the resist film for forming the resist pattern of the present invention, optionally a resist underlayer film, a metal oxide film, a laminated film such as a substrate is 20% or less, preferably 15% or less, preferably 10%. Below, it is required to be preferably 7% or less, preferably 6% or less.
• the metal referred to in the present invention is not particularly limited as long as it is a metal used as a wiring material or the like in the manufacture of semiconductor devices.
• Specific examples include iron, copper, tin and aluminum, with copper and aluminum being particularly preferred, with copper being particularly preferred.
• the oxidation treatment referred to in the present invention is not limited as long as it is a method of forming a metal oxide having a certain film thickness on the metal substrate, but heat treatment in the presence of oxygen, oxygen plasma treatment, ozone treatment, and hydrogen peroxide treatment. and oxidant-containing alkaline chemical treatment.
• n/k reffractive index/extinction coefficient
• film thickness The film thickness of the metal oxide film referred to in the present invention is determined by the n/k (refractive index/absorption coefficient) value with respect to the exposure wavelength, for example, by a known reflectance simulation described in Japanese Unexamined Patent Application Publication No. 2000-506288, etc.
• the film thickness can be adjusted appropriately, and is, for example, 1 to 100 nm. Therefore, the preferable film thickness range of the resist underlayer film/metal oxide film in the present invention is (5 to 300 nm)/(1 to 100 nm).
• n/k reffractive index/extinction coefficient
• the resist underlayer film referred to in the present invention is a film placed under the resist in the lithography process of manufacturing a semiconductor device, and is not limited as long as it is a resist underlayer film exhibiting the effect of the present application, and includes known organic compounds. and may include known heterocyclic compounds.
• it may contain a known organic polymer or inorganic polymer.
• the resist underlayer film according to the present invention can be produced by applying a known composition for forming a resist underlayer film on a substrate and baking the composition.
• it may be a resist underlayer film containing a heterocyclic compound having a dicyanostyryl group described in WO2020/255984.
• a 1 to A 3 are each independently a direct bond or an optionally substituted alkylene group having 1 to 6 carbon atoms
• B 1 to B 3 each independently represent a direct bond, an ether bond, a thioether bond or an ester bond
• R 4 to R 12 each independently represent a hydrogen atom, a methyl group or an ethyl group
• Z 1 to Z 3 represent formula (II).
• n Xs each independently represent an alkyl group, a hydroxyl group, an alkoxy group, an alkoxycarbonyl group, a halogen atom, a cyano group or a nitro group;
• R represents a hydrogen atom, an alkyl group or an arylene group,
• Y represents an ether bond, a thioether bond or an ester bond,
• n represents an integer of 0 to 4;
• alkyl group examples include linear or branched alkyl groups which may or may not have a substituent, such as methyl, ethyl, n-propyl, isopropyl, n- butyl group, sec-butyl group, tert-butyl group, n-pentyl group, isopentyl group, neopentyl group, n-hexyl group, isohexyl group, n-heptyl group, n-octyl group, cyclohexyl group, 2-ethylhexyl group, n-nonyl group, isononyl group, p-tert-butylcyclohexyl group, n-decyl group, n-dodecylnonyl group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexy
• an alkyl group having 1 to 20 carbon atoms more preferably an alkyl group having 1 to 12 carbon atoms, still more preferably an alkyl group having 1 to 8 carbon atoms, most preferably an alkyl group having 1 to 4 carbon atoms is.
• alkoxy group examples include groups in which an oxygen atom is bonded to the alkyl group.
• methoxy group ethoxy group
• propoxy group butoxy group and the like.
• alkoxycarbonyl group examples include groups in which an oxygen atom and a carbonyl group are bonded to the above alkyl group. Examples include methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl and butoxycarbonyl groups.
• alkylene group examples include a divalent group obtained by removing a hydrogen atom from the alkyl group. Examples include methylene group, ethylene group, 1,3-propylene group, 1,2-propylene group and the like.
• arylene group examples include a phenylene group, an o-methylphenylene group, an m-methylphenylene group, a p-methylphenylene group, an ⁇ -naphthylene group, a ⁇ -naphthylene group, an o-biphenylylene group, an m-biphenylylene group and a p-biphenylylene group. groups, 1-anthrylene group, 2-anthrylene group, 9-anthrylene group, 1-phenanthrylene group, 2-phenanthrylene group, 3-phenanthrylene group, 4-phenanthrylene group and 9-phenanthrylene group. Arylene groups having 6 to 14 carbon atoms are preferred, and arylene groups having 6 to 10 carbon atoms are more preferred.
• a halogen atom usually refers to each atom of fluorine, chlorine, bromine, and iodine.
• the ester bond referred to in the present invention includes -COO- and -OCO-.
• the resist underlayer film referred to in the present invention is represented by the following formula (1) described in WO2013/018802: [Wherein, A 1 , A 2 , A 3 , A 4 , A 5 and A 6 each represent a hydrogen atom, a methyl group or an ethyl group; Formula (4) or Formula (0): (wherein R 1 and R 2 each represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group, and Alkyl groups having 1 to 6 carbon atoms, alkenyl groups having 3 to 6 carbon atoms, benzyl groups and phenyl groups are alkyl groups having 1 to 6 carbon atoms, halogen atoms, alkoxy groups having 1 to 6 carbon atoms and nitro groups.
• R 3 represents a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 3 to 6 carbon atoms, a benzyl group or a phenyl group;
• the group is selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, a hydroxy group, and an alkylthio group having 1 to 6 carbon atoms.
• Q is formula (5) or formula (6): (In the formula, Q 1 represents an alkylene group, phenylene group, naphthylene group, or anthrylene group having 1 to 10 carbon atoms, and the alkylene group, phenylene group, naphthylene group, and anthrylene group each have a number of carbon atoms.
• n 1 and n 2 each represent the number of 0 or 1
• X 2 is the formula (2), (representing formula (3) or formula (0))].
• the resist underlayer film referred to in the present invention contains a polymer (P) having a dicyanostyryl group or a compound (C) having a dicyanostyryl group described in WO2020/255985, contains solvents, does not contain alkylated aminoplast crosslinkers derived from melamine, urea, benzoguanamine, or glycoluril; does not contain a protonic acid curing catalyst, It may be derived from a resist underlayer film-forming composition.
• composition for forming a resist underlayer film of the present invention is described in JP-A-11-511194, 1.
• a A dye-grafted hydroxyl-functional oligomer reaction product of a preselected phenol- or carboxylic acid-functional dye and a poly(epoxide) resin having an epoxy functionality greater than 2.0 and less than 10; The product has light-absorbing properties useful for base layer ARC coatings;
• b alkylated aminoplast crosslinkers derived from melamine, urea, benzoguanamine or glycoluril;
• a solvent system comprising a low to medium boiling point alcohol; in said solvent system the alcohol accounts for at least twenty (20) weight percent of the total solvent content and the molar ratio of alcohol is at least four to one (4) per equivalent methylol unit of the aminoplast. : 1); and e.
• An improved ARC composition having ether or ester linkages derived from poly(epoxide) molecules; The improved ARC eliminates resist/ARC component intermixing through the thermosetting action of the ARCs, provides improved optical density at target exposure and ARC layer thickness, and exhibits high solubility differential high molecular weight thermoplastic ARCs.
• the improved ARC composition which eliminates the need for a binder, may be derived from the improved ARC composition.
• the resist underlayer film in the present invention is an antireflection coating composition used in a microlithographic process described in JP-A-2009-37245, in which the composition is dispersed or dissolved in a solvent system, a polymer, a crosslinked containing a light-attenuating compound and a strong acid, said polymer is selected from the group consisting of acrylic polymers, polyesters, epoxy novolaks, polysaccharides, polyethers, polyimides, and mixtures thereof; said cross-linking agent is selected from the group consisting of amino resins and epoxy resins; wherein said light-attenuating compound is selected from the group consisting of phenolic compounds, carboxylic acids, phosphoric acids, cyano compounds, benzene, naphthalene and anthracene;
• the strong acid is less than 1.0% by mass when the total mass of the composition is 100% by mass, and the strong acid is p-toluenesulfonic acid, sulfuric acid, hydrochloric acid,
• it may be a resist underlayer film containing a compound represented by the following formula.
• the method for manufacturing a semiconductor device comprises: a step of subjecting a substrate containing a metal on its surface to oxidation treatment to form a metal oxide film on the surface of the substrate; a step of applying a resist onto the metal oxide film and baking it to form a resist film; The method includes a step of exposing the semiconductor substrate coated with the metal oxide film and the resist, and a step of developing and patterning the resist film after the exposure.
• the method for manufacturing a semiconductor device comprises: A step of applying a resist underlayer film-forming composition to a substrate containing a metal on its surface and then heating in the presence of oxygen to form a laminated film in which a resist underlayer film exists on a metal oxide film; a step of applying a resist onto the resist underlayer film and baking it to form a resist film;
• the method may include a step of exposing the resist underlayer film and the semiconductor substrate coated with the resist, and a step of developing and patterning the resist film after the exposure.
• substrates used for manufacturing semiconductor devices include, for example, silicon wafer substrates, silicon/silicon dioxide coated substrates, silicon nitride substrates, glass substrates, ITO substrates, polyimide substrates, and low dielectric substrates. low-k materials coated substrates, and the like.
• the FOWLP process has begun to be applied for the purpose of high-speed response and power saving by shortening the wiring length between semiconductor chips.
• the RDL (redistribution) process for creating wiring between semiconductor chips copper (Cu) is used as a wiring member, and as the copper wiring becomes finer, an antireflection film (resist underlayer film forming composition) is applied.
• an antireflection film resist underlayer film forming composition
• a known composition for forming a resist underlayer film according to the present invention is applied onto a substrate (for example, a substrate containing copper on the surface) used in the manufacture of the semiconductor device described above by a suitable coating method such as a spinner or a coater. After that, the resist underlayer film is formed by baking.
• the resist underlayer film referred to in the present invention usually contains a compound or polymer, an acid generator, a cross-linking agent, and a solvent for obtaining refractive index adjustment for antireflection, light absorption, and adhesion to materials contained in the resist.
• the firing conditions are appropriately selected from a firing temperature of 80° C. to 400° C. and a firing time of 0.3 to 60 minutes. Preferably, the firing temperature is 150° C.
• the thickness of the underlayer film to be formed is, for example, 1 to 1000 nm, 2 to 500 nm, 3 to 400 nm, 5 to 300 nm, 5 to 200 nm, or 5 to 100 nm. , or 5-80 nm, or 5-50 nm, or 5-30 nm, or 5-20 nm.
• an inorganic resist underlayer film (hard mask) can be formed on the organic resist underlayer film according to the present invention.
• a silicon-containing resist underlayer film (inorganic resist underlayer film)-forming composition described in WO2009/104552A1 can be formed by spin coating, or a Si-based inorganic material film can be formed by a CVD method or the like.
• a resist film for example, a photoresist layer is then formed on the resist underlayer film.
• the photoresist layer can be formed by a well-known method of removing the solvent from the coating film of the resist underlayer film-forming composition, that is, by applying a solution of the photoresist composition onto the underlayer film and baking.
• the film thickness of the photoresist is, for example, 50 to 10,000 nm, or 100 to 4,000 nm.
• the photoresist formed on the resist underlayer film is not particularly limited as long as it is sensitive to the light used for exposure. Both negative and positive photoresists can be used.
• positive photoresist composed of novolac resin and 1,2-naphthoquinonediazide sulfonic acid ester;
• a chemically amplified photoresist comprising a low-molecular compound that decomposes to increase the alkali dissolution rate of the photoresist, an alkali-soluble binder, and a photoacid generator, and a binder having a group that decomposes with an acid to increase the alkali dissolution rate.
• a chemically amplified photoresist composed of a low-molecular-weight compound and a photoacid generator, which are decomposed by acid to increase the rate of alkali dissolution of the photoresist.
• Examples include APEX-E (trade name) manufactured by Shipley, PAR710 (trade name) manufactured by Sumitomo Chemical Co., Ltd., SEPR430 (trade name) manufactured by Shin-Etsu Chemical Co., Ltd., and the like.
• Proc. SPIE Vol. 3999, 330-334 (2000)
• Proc. SPIE Vol. 3999, 365-374 (2000).
• a resist pattern is formed by irradiation with light or an electron beam and development.
• Exposure is performed through a predetermined mask. Near-ultraviolet rays, far-ultraviolet rays, or extreme ultraviolet rays (for example, EUV (wavelength: 13.5 nm)) or the like are used for exposure. Specifically, i-line (wavelength: 365 nm), KrF excimer laser (wavelength: 248 nm), ArF excimer laser (wavelength: 193 nm), F2 excimer laser ( wavelength: 157 nm), and the like can be used. Among these, the i-line (wavelength: 365 nm) is preferred.
• a post exposure bake can be performed if necessary. The post-exposure heating is performed under conditions appropriately selected from a heating temperature of 70° C. to 150° C. and a heating time of 0.3 to 10 minutes.
• a resist for electron beam lithography can be used instead of a photoresist as a resist.
• Both negative type and positive type electron beam resists can be used.
• a chemically amplified resist consisting of an acid generator and a binder having a group that is decomposed by an acid to change the alkali dissolution rate, and an alkali-soluble binder, an acid generator, and a low-molecular-weight compound that is decomposed by an acid to change the alkali dissolution rate of the resist.
• a chemically amplified resist consisting of an acid generator, a binder having a group that is decomposed by an acid to change the alkali dissolution rate, and a low-molecular-weight compound that is decomposed by the acid to change the alkali dissolution rate of the resist
• non-chemically amplified resists composed of a binder having a group that is decomposed by an electron beam to change the alkali dissolution rate
• non-chemically amplified resists composed of a binder having a site that is cut by an electron beam and changes the alkali dissolution rate. Even when these electron beam resists are used, a resist pattern can be formed in the same manner as when a photoresist is used with an electron beam as an irradiation source.
• Examples of the developer include aqueous solutions of alkali metal hydroxides such as potassium hydroxide and sodium hydroxide, aqueous solutions of tetramethylammonium hydroxide, tetraethylammonium hydroxide, quaternary ammonium hydroxides such as choline, ethanolamine, propylamine, Examples include aqueous alkaline solutions such as aqueous solutions of amines such as ethylenediamine. Furthermore, a surfactant or the like can be added to these developers.
• the development conditions are appropriately selected from a temperature of 5 to 50° C. and a time of 10 to 600 seconds.
• an organic underlayer film lower layer
• an inorganic underlayer film intermediate layer
• a photoresist upper layer
• the substrate can be processed by selecting an appropriate etching gas.
• an appropriate etching gas for example, it is possible to process the resist underlayer film by using a fluorine-based gas, which has a sufficiently high etching rate for the photoresist, as an etching gas, and etch the fluorine-based gas, which has a sufficiently high etching rate for the inorganic underlayer film.
• the substrate can be processed by using the gas, and furthermore, the substrate can be processed by using the oxygen-based gas as the etching gas, which has a sufficiently high etching rate for the organic underlayer film.
• the inorganic underlayer film is removed using the thus formed photoresist pattern as a protective film, and then the organic underlayer film is removed using a film composed of the patterned photoresist and inorganic underlayer film as a protective film. is done. Finally, the semiconductor substrate is processed using the patterned inorganic underlayer film and organic underlayer film as protective films.
• the portion of the inorganic underlayer film from which the photoresist has been removed is removed by dry etching to expose the semiconductor substrate.
• Tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), trifluoromethane, carbon monoxide, argon, oxygen, nitrogen, and hexafluoromethane are used for dry etching of inorganic underlayer films.
• Gases such as sulfur fluoride, difluoromethane, nitrogen and chlorine trifluoride, chlorine, trichloroborane and dichloroborane can be used.
• a halogen-based gas for the dry etching of the inorganic underlayer film, it is preferable to use a halogen-based gas, more preferably a fluorine-based gas.
• fluorine-based gases include tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), trifluoromethane, and difluoromethane (CH 2 F 2 ). mentioned.
• the organic underlayer film is removed using a film composed of the patterned photoresist and the inorganic underlayer film as a protective film. Since an inorganic underlayer film containing a large amount of silicon atoms is difficult to remove by dry etching with an oxygen-based gas, the organic underlayer film is often removed by dry etching with an oxygen-based gas.
• the semiconductor substrate is preferably processed by dry etching using a fluorine-based gas.
• fluorine-based gases include tetrafluoromethane (CF 4 ), perfluorocyclobutane (C 4 F 8 ), perfluoropropane (C 3 F 8 ), trifluoromethane, and difluoromethane (CH 2 F 2 ). mentioned.
• an organic antireflection film can be formed on the upper layer of the resist underlayer film before forming the photoresist.
• the antireflection coating composition used there is not particularly limited, and can be used by arbitrarily selecting from those commonly used in the lithography process.
• the antireflection film can be formed by coating with a coater and baking.
• the resist underlayer film formed from the resist underlayer film-forming composition may also absorb light. In such a case, it can function as an antireflection film having an effect of preventing reflected light from the substrate. Furthermore, the underlayer film formed from the composition for forming a resist underlayer film of the present invention can also function as a hard mask.
• the underlayer film of the present invention has a layer for preventing interaction between the substrate and the photoresist, and a function for preventing adverse effects on the substrate of materials used for the photoresist or substances generated when the photoresist is exposed to light.
• It can also be used as a layer, a layer having a function of preventing diffusion of substances generated from the substrate during heating and baking into the upper photoresist layer, and a barrier layer for reducing the poisoning effect of the photoresist layer by the dielectric layer of the semiconductor substrate. It is possible.
• the underlayer film formed from the resist underlayer film-forming composition can be used as a filling material that can be applied to a substrate in which via holes are formed for use in a dual damascene process, and that can fill the holes without gaps. It can also be used as a planarizing material for planarizing the uneven surface of a semiconductor substrate.
• a resist underlayer film formed from a conventional resist underlayer film-forming composition originally needs to be a cured film having solvent resistance in order to suppress mixing with the resist during coating of the resist.
• resist patterning it is necessary to use a developing solution for resolving the resist, and resistance to this developing solution is essential.
• the resist underlayer film may be etched (removed) with a wet etching solution.
• the wet etching solution preferably contains, for example, an organic solvent, and may contain an acidic compound or a basic compound.
• organic solvents include dimethylsulfoxide, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, N-ethylpyrrolidone, ethylene glycol, propylene glycol, diethylene glycol dimethyl ether and the like.
• acidic compounds include inorganic acids and organic acids. Examples of inorganic acids include hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid.
• organic acids include p-toluenesulfonic acid, trifluoromethanesulfonic acid, salicylic acid, 5-sulfosalicylic acid, 4-phenolsulfonic acid, camphorsulfonic acid, 4-chlorobenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, acetic acid, propionic acid, trifluoroacetic acid, citric acid, benzoic acid, hydroxybenzoic acid, naphthalenecarboxylic acid and the like.
• basic compounds include inorganic bases and organic bases.
• inorganic bases examples include alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, and the like. quaternary ammonium hydroxide, ethanolamine, propylamine, diethylaminoethanol, amines such as ethylenediamine. Furthermore, the wet etching solution can use only one type of organic solvent, or can use two or more types in combination. In addition, one kind of acidic compound or basic compound can be used, or two or more kinds can be used in combination.
• the content of the acidic compound or basic compound is 0.01 to 20% by weight, preferably 0.1 to 5% by weight, particularly preferably 0.2 to 1% by weight, relative to the wet etching solution.
• the wet etching solution is preferably an organic solvent containing a basic compound, and more preferably a mixed solution containing dimethylsulfoxide and tetramethylammonium hydroxide.
• the typical RDL process is explained below, but is not limited to this.
• patterning is performed by light irradiation (exposure) and development, thereby opening the semiconductor chip electrode portion.
• a copper seed layer is formed by sputtering to form a copper wiring, which is a wiring member, by a plating process.
• light irradiation and development are performed to pattern the resist.
• Unnecessary resist underlayer film is removed by dry etching, and electrolytic copper plating is performed on the copper seed layer between the exposed resist patterns to form a copper wiring serving as a first wiring layer.
• the resist underlayer film according to the present invention can be removed by wet etching, it can be used as a resist underlayer film in such an RDL process to simplify the process steps and reduce damage to the processed substrate. From the point of view, it can be used particularly preferably.
• the resist pattern standing wave reduction method of the present invention comprises: a step of subjecting a substrate containing a metal on its surface, preferably a semiconductor substrate, to oxidation treatment to form a metal oxide film on the substrate surface; a step of applying a resist onto the metal oxide film and baking it to form a resist film; The method includes a step of exposing a substrate, preferably a semiconductor substrate, coated with the metal oxide film and the resist, and a step of developing and patterning the resist film after the exposure.
• the resist pattern standing wave reduction method of the present invention comprises: A step of applying a resist underlayer film-forming composition to a substrate containing a metal on its surface, preferably a semiconductor substrate, and then heating in the presence of oxygen to form a laminated film in which a resist underlayer film exists on a metal oxide film; a step of applying a resist onto the resist underlayer film and baking it to form a resist film;
• the method may include a step of exposing the resist underlayer film and the substrate coated with the resist, preferably a semiconductor substrate, and a step of developing and patterning the resist film after the exposure.
• (Preparation Example 1) [Preparation of composition for forming resist underlayer film] Tetramethoxymethyl glycoluril (trade name: POWDER LINK [registered trademark] 1174, manufactured by Nippon Scientific Industries Co., Ltd.) 0.12 g, pyridinium-p-toluenesulfonate 0.006 g as a cross-linking catalyst, Megafac R-30N (manufactured by DIC Corporation, trade name) 0. 01 g, 134.37 g of propylene glycol monomethyl ether, and 14.93 g of propylene glycol monomethyl ether acetate were added to prepare a solution of a composition for forming a resist underlayer film for lithography.
• the reaction product includes a structure represented by formula (A-2) below.
• the copper substrate was baked on a hot plate at 150° C. for 10 to 60 minutes to form a copper oxide film on the surface layer of the copper substrate.
• the obtained copper oxide film was measured for n value (refractive index) and k value (attenuation coefficient) at a wavelength of 365 nm (i-line wavelength).
• Table 1 shows the results. From the above results, the copper oxide film obtained by baking on a hot plate has an appropriate n value and k value at 365 nm, so it is preferable in the lithography process using radiation such as i-line. It has an anti-reflection function that can suppress reflection (standing wave) from the underlying substrate, which is a factor in forming a resist pattern. Therefore, the copper oxide film is useful as a resist underlayer film.
• the resist underlayer film-forming composition obtained by Preparation Example 1 has appropriate n-value and k-value at 365 nm. It has an anti-reflection function that can suppress reflection (standing wave) from the underlying substrate, which causes the resist pattern. Therefore, it is useful as a resist underlayer film.
• Example 1 A copper substrate having a diameter of 8 inches was baked on a hot plate at 150° C. for 30 minutes to form a copper oxide film (thickness: about 20 nm) on the surface of the copper substrate. Subsequently, a commercially available positive resist for i-line exposure was applied to a film thickness of about 2 ⁇ m using a spin coater, and prebaked on a hot plate at 90° C. for 3 minutes to form a photoresist laminate. Next, the photoresist laminate was subjected to i-line exposure using a stepper (manufactured by Nikon, NSR-2205i12D) through a pattern mask for resolution measurement.
• a stepper manufactured by Nikon, NSR-2205i12D
• TMAH tetramethylammonium hydroxide
• Example 2 The resist underlayer film-forming composition for lithography prepared in Preparation Example 1 was applied to a copper substrate having a diameter of 8 inches by a spin coater so as to have a film thickness of about 10 nm, and baked on a hot plate at 200°C for 90 seconds.
• a copper oxide film (thickness: about 10 nm) was simultaneously formed on the surface layer of the copper substrate and a composition for forming a resist underlayer film for lithography was formed thereon.
• a general i-line resist was applied to a film thickness of about 2 ⁇ m by a spin coater and prebaked on a hot plate at 90° C. for 3 minutes to form a photoresist laminate.
• the photoresist laminate was subjected to i-line exposure using a stepper (manufactured by Nikon, NSR-2205i12D) through a pattern mask for resolution measurement. After exposure, it is post-baked at 90 ° C. for 90 seconds, and this is a resist developer, 2.38% tetramethylammonium hydroxide (tetramethylammonium hydroxide: TMAH) aqueous solution (product name: NMD-3, Tokyo Ohka Co., Ltd. ) to obtain a 0.8 ⁇ m 1:1 line and space resist pattern. After that, the cross-sectional shape of the resist pattern was observed with a scanning electron microscope to evaluate the degree of undulation due to standing waves in the resist pattern shape.
• TMAH tetramethylammonium hydroxide
• Example 3 A copper substrate having a diameter of 8 inches was baked on a hot plate at 150° C. for 30 minutes to form a copper oxide film (thickness: about 20 nm) on the surface of the copper substrate.
• the composition for forming a resist underlayer film for lithography prepared in Preparation Example 1 is applied with a spin coater to a film thickness of about 10 nm, and baked (baked) on a hot plate at 200° C. for 90 seconds.
• a resist underlayer film-forming composition for lithography was formed on the upper layer of the copper oxide film.
• a general i-line resist was applied to a film thickness of about 2 ⁇ m by a spin coater and prebaked on a hot plate at 90° C.
• the photoresist laminate was subjected to i-line exposure using a stepper (manufactured by Nikon, NSR-2205i12D) through a pattern mask for resolution measurement. After exposure, it is post-baked at 90 ° C. for 90 seconds, and this is a resist developer, 2.38% tetramethylammonium hydroxide (tetramethylammonium hydroxide: TMAH) aqueous solution (product name: NMD-3, Tokyo Ohka Co., Ltd. ) to obtain a 0.8 ⁇ m 1:1 line and space resist pattern. After that, the cross-sectional shape of the resist pattern was observed with a scanning electron microscope to evaluate the degree of undulation due to standing waves in the resist pattern shape.
• TMAH tetramethylammonium hydroxide
• ⁇ Comparative Example 1> On a copper substrate with a diameter of 8 inches, a commercially available positive resist for i-line exposure was applied to a film thickness of about 2 ⁇ m by a spin coater, prebaked on a hot plate at 90° C. for 3 minutes, and photo-processed. A resist laminate was formed. Next, the photoresist laminate was subjected to i-line exposure using a stepper (manufactured by Nikon, NSR-2205i12D) through a pattern mask for resolution measurement. After exposure, it is post-baked at 90 ° C.
• a stepper manufactured by Nikon, NSR-2205i12D
• TMAH tetramethylammonium hydroxide
• the evaluation criteria for the resist pattern shape of Examples 1 to 3 and Comparative Example 1 are as follows. ⁇ ”, and the results are shown in Table 3 below.
• the film thickness of the copper oxide film was measured by observing the cross section of the substrate using a scanning electron microscope. From the above results, in Examples 1 to 3, compared with Comparative Example 1, resist pattern shapes with less undulation due to standing waves were obtained. That is, by using a copper oxide film or a copper oxide film and a resist underlayer film at the same time, it is possible to reduce the reflection (standing wave) from the copper substrate during exposure during lithography, and the resist pattern after development. Unfavorable phenomenon of wavy shape can be suppressed.
• the standing wave of the resist pattern (defect due to reflection) can be reduced, and a good rectangular resist can be formed on the substrate. pattern can be obtained.

Landscapes

• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Architecture (AREA)
• Structural Engineering (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Manufacturing & Machinery (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Photosensitive Polymer And Photoresist Processing (AREA)
• Materials For Photolithography (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

Family

ID=83847242

Family Applications (1)

Country Status (6)

Cited By (1)

Citations (5)

Family Cites Families (1)

• 2022
  • 2022-04-25 CN CN202280027313.9A patent/CN117178231A/zh active Pending
  • 2022-04-25 TW TW111115589A patent/TWI910343B/zh active
  • 2022-04-25 US US18/286,612 patent/US20240219834A1/en active Pending
  • 2022-04-25 KR KR1020237028753A patent/KR20240001312A/ko active Pending
  • 2022-04-25 WO PCT/JP2022/018653 patent/WO2022230790A1/ja not_active Ceased
  • 2022-04-25 JP JP2023517495A patent/JPWO2022230790A1/ja active Pending

Patent Citations (5)

Also Published As

Similar Documents

Legal Events