KR20230138475A - 마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템 - Google Patents

마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템 Download PDF

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Publication number
KR20230138475A
KR20230138475A KR1020237026775A KR20237026775A KR20230138475A KR 20230138475 A KR20230138475 A KR 20230138475A KR 1020237026775 A KR1020237026775 A KR 1020237026775A KR 20237026775 A KR20237026775 A KR 20237026775A KR 20230138475 A KR20230138475 A KR 20230138475A
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KR
South Korea
Prior art keywords
exposure apparatus
projection exposure
heating
optical element
optical
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Pending
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KR1020237026775A
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English (en)
Korean (ko)
Inventor
디르크 헬베크
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칼 짜이스 에스엠테 게엠베하
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Publication of KR20230138475A publication Critical patent/KR20230138475A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G03F7/70504—Optical system modelling, e.g. lens heating models
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020237026775A 2021-02-10 2021-11-08 마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템 Pending KR20230138475A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102021201258.2 2021-02-10
DE102021201258.2A DE102021201258A1 (de) 2021-02-10 2021-02-10 Verfahren zum Heizen eines optischen Elements in einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
PCT/EP2021/080878 WO2022171321A1 (de) 2021-02-10 2021-11-08 Verfahren zum heizen eines optischen elements in einer mikrolithographischen projektionsbelichtungsanlage, sowie optisches system

Publications (1)

Publication Number Publication Date
KR20230138475A true KR20230138475A (ko) 2023-10-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237026775A Pending KR20230138475A (ko) 2021-02-10 2021-11-08 마이크로리소그래피 투영 노광 장치에서 광학 요소를가열하는 방법 및 광학 시스템

Country Status (6)

Country Link
US (1) US12353141B2 (https=)
JP (1) JP2024506046A (https=)
KR (1) KR20230138475A (https=)
CN (1) CN116830044A (https=)
DE (1) DE102021201258A1 (https=)
WO (1) WO2022171321A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024110341A1 (en) * 2022-11-22 2024-05-30 Carl Zeiss Smt Gmbh Projection exposure apparatus with manipulators
DE102023206859A1 (de) * 2023-07-19 2025-01-23 Carl Zeiss Smt Gmbh Spiegelsystem, Verfahren zum Betreiben eines Spiegelsystems, Projektionsobjektiv für eine mikrolithografische Projektionsbelichtungsanlage, Computerprogrammprodukt

Family Cites Families (28)

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Publication number Priority date Publication date Assignee Title
US7061579B2 (en) 2003-11-13 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
US7375794B2 (en) * 2004-08-04 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2009046955A2 (en) 2007-10-09 2009-04-16 Carl Zeiss Smt Ag Device for controlling temperature of an optical element
DE102008002403A1 (de) 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
WO2012013751A1 (en) * 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
WO2012097833A1 (en) * 2011-01-20 2012-07-26 Carl Zeiss Smt Gmbh Method of operating a projection exposure tool
DE102012216284A1 (de) 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102013204427A1 (de) 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Anordnung zur thermischen Aktuierung eines Spiegels, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
DE102013219986A1 (de) * 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102014216631A1 (de) * 2014-08-21 2016-02-25 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage, Spiegelmodul hierfür, sowie Verfahren zum Betrieb des Spiegelmoduls
DE102014223750A1 (de) * 2014-11-20 2016-05-25 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
JP2017538156A (ja) * 2014-12-02 2017-12-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
US10444643B2 (en) * 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
DE102017205405A1 (de) 2017-03-30 2018-10-04 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US11720034B2 (en) * 2017-04-11 2023-08-08 Asml Netherlands B.V. Lithographic apparatus and cooling method
DE102017207862A1 (de) 2017-05-10 2017-07-06 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit einer Heizlichtquelle und Verfahren zum Heizen einer Komponente der Projektionsbelichtungsanlage
DE102018208653A1 (de) 2018-05-30 2019-12-05 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
WO2020002143A1 (en) * 2018-06-25 2020-01-02 Asml Netherlands B.V. Wavefront optimization for tuning scanner based on performance matching
DE102019202531A1 (de) * 2019-02-25 2020-02-20 Carl Zeiss Smt Gmbh Optisches Korrekturelement, Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Korrekturelement und Verfahren zur Auslegung eines Korrekturelementes
DE102019219289A1 (de) 2019-12-11 2021-06-17 Carl Zeiss Smt Gmbh Optisches System, sowie Heizanordnung und Verfahren zum Heizen eines optischen Elements in einem optischen System
WO2022008174A1 (en) * 2020-07-09 2022-01-13 Asml Netherlands B.V. Method for adjusting a patterning process
US20230315027A1 (en) * 2020-07-09 2023-10-05 Asml Netherlands B.V. Motion control using an artificial neural network
DE102020209141A1 (de) 2020-07-21 2022-01-27 Carl Zeiss Smt Gmbh Verfahren zum Betreiben eines optischen Systems für die Mikrolithographie, sowie optisches System
CN115997170B (zh) 2020-08-07 2025-11-04 卡尔蔡司Smt有限责任公司 反射镜、特别是用于微光刻投射曝光设备的反射镜
DE102021100995A1 (de) 2021-01-19 2022-07-21 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines optischen Elements in einem optischen System
CN119365822A (zh) * 2022-06-14 2025-01-24 卡尔蔡司Smt有限责任公司 用于加热光学元件的方法和光学系统

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Publication number Publication date
US20230350312A1 (en) 2023-11-02
DE102021201258A1 (de) 2022-08-11
CN116830044A (zh) 2023-09-29
JP2024506046A (ja) 2024-02-08
US12353141B2 (en) 2025-07-08
WO2022171321A1 (de) 2022-08-18

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