CN116830044A - 用于加热微光刻投射曝光设备中的光学元件的方法以及光学系统 - Google Patents

用于加热微光刻投射曝光设备中的光学元件的方法以及光学系统 Download PDF

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Publication number
CN116830044A
CN116830044A CN202180093190.4A CN202180093190A CN116830044A CN 116830044 A CN116830044 A CN 116830044A CN 202180093190 A CN202180093190 A CN 202180093190A CN 116830044 A CN116830044 A CN 116830044A
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CN
China
Prior art keywords
optical element
projection exposure
heating
heating power
point value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180093190.4A
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English (en)
Chinese (zh)
Inventor
D·黑尔韦格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN116830044A publication Critical patent/CN116830044A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G03F7/70504—Optical system modelling, e.g. lens heating models
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN202180093190.4A 2021-02-10 2021-11-08 用于加热微光刻投射曝光设备中的光学元件的方法以及光学系统 Pending CN116830044A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102021201258.2 2021-02-10
DE102021201258.2A DE102021201258A1 (de) 2021-02-10 2021-02-10 Verfahren zum Heizen eines optischen Elements in einer mikrolithographischen Projektionsbelichtungsanlage, sowie optisches System
PCT/EP2021/080878 WO2022171321A1 (de) 2021-02-10 2021-11-08 Verfahren zum heizen eines optischen elements in einer mikrolithographischen projektionsbelichtungsanlage, sowie optisches system

Publications (1)

Publication Number Publication Date
CN116830044A true CN116830044A (zh) 2023-09-29

Family

ID=78676547

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180093190.4A Pending CN116830044A (zh) 2021-02-10 2021-11-08 用于加热微光刻投射曝光设备中的光学元件的方法以及光学系统

Country Status (6)

Country Link
US (1) US12353141B2 (https=)
JP (1) JP2024506046A (https=)
KR (1) KR20230138475A (https=)
CN (1) CN116830044A (https=)
DE (1) DE102021201258A1 (https=)
WO (1) WO2022171321A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024110341A1 (en) * 2022-11-22 2024-05-30 Carl Zeiss Smt Gmbh Projection exposure apparatus with manipulators
DE102023206859A1 (de) * 2023-07-19 2025-01-23 Carl Zeiss Smt Gmbh Spiegelsystem, Verfahren zum Betreiben eines Spiegelsystems, Projektionsobjektiv für eine mikrolithografische Projektionsbelichtungsanlage, Computerprogrammprodukt

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7061579B2 (en) 2003-11-13 2006-06-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
US7375794B2 (en) * 2004-08-04 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2009046955A2 (en) 2007-10-09 2009-04-16 Carl Zeiss Smt Ag Device for controlling temperature of an optical element
DE102008002403A1 (de) 2008-06-12 2009-12-17 Carl Zeiss Smt Ag Verfahren zum Herstellen einer Mehrlagen-Beschichtung, optisches Element und optische Anordnung
WO2012013751A1 (en) * 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Euv exposure apparatus
WO2012097833A1 (en) * 2011-01-20 2012-07-26 Carl Zeiss Smt Gmbh Method of operating a projection exposure tool
DE102012216284A1 (de) 2011-09-27 2013-03-28 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
DE102013204427A1 (de) 2013-03-14 2014-09-18 Carl Zeiss Smt Gmbh Anordnung zur thermischen Aktuierung eines Spiegels, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102013219808A1 (de) * 2013-09-30 2015-04-02 Heraeus Quarzglas Gmbh & Co. Kg Spiegelblank für EUV Lithographie ohne Ausdehnung unter EUV-Bestrahlung
DE102013219986A1 (de) * 2013-10-02 2015-04-02 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
DE102014216631A1 (de) * 2014-08-21 2016-02-25 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage, Spiegelmodul hierfür, sowie Verfahren zum Betrieb des Spiegelmoduls
DE102014223750A1 (de) * 2014-11-20 2016-05-25 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator
JP2017538156A (ja) * 2014-12-02 2017-12-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
US10444643B2 (en) * 2017-03-24 2019-10-15 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
DE102017205405A1 (de) 2017-03-30 2018-10-04 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US11720034B2 (en) * 2017-04-11 2023-08-08 Asml Netherlands B.V. Lithographic apparatus and cooling method
DE102017207862A1 (de) 2017-05-10 2017-07-06 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit einer Heizlichtquelle und Verfahren zum Heizen einer Komponente der Projektionsbelichtungsanlage
DE102018208653A1 (de) 2018-05-30 2019-12-05 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines Spiegels in einem optischen System
WO2020002143A1 (en) * 2018-06-25 2020-01-02 Asml Netherlands B.V. Wavefront optimization for tuning scanner based on performance matching
DE102019202531A1 (de) * 2019-02-25 2020-02-20 Carl Zeiss Smt Gmbh Optisches Korrekturelement, Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Korrekturelement und Verfahren zur Auslegung eines Korrekturelementes
DE102019219289A1 (de) 2019-12-11 2021-06-17 Carl Zeiss Smt Gmbh Optisches System, sowie Heizanordnung und Verfahren zum Heizen eines optischen Elements in einem optischen System
WO2022008174A1 (en) * 2020-07-09 2022-01-13 Asml Netherlands B.V. Method for adjusting a patterning process
US20230315027A1 (en) * 2020-07-09 2023-10-05 Asml Netherlands B.V. Motion control using an artificial neural network
DE102020209141A1 (de) 2020-07-21 2022-01-27 Carl Zeiss Smt Gmbh Verfahren zum Betreiben eines optischen Systems für die Mikrolithographie, sowie optisches System
CN115997170B (zh) 2020-08-07 2025-11-04 卡尔蔡司Smt有限责任公司 反射镜、特别是用于微光刻投射曝光设备的反射镜
DE102021100995A1 (de) 2021-01-19 2022-07-21 Carl Zeiss Smt Gmbh Verfahren sowie Vorrichtung zum Bestimmen des Erwärmungszustandes eines optischen Elements in einem optischen System
CN119365822A (zh) * 2022-06-14 2025-01-24 卡尔蔡司Smt有限责任公司 用于加热光学元件的方法和光学系统

Also Published As

Publication number Publication date
US20230350312A1 (en) 2023-11-02
DE102021201258A1 (de) 2022-08-11
JP2024506046A (ja) 2024-02-08
US12353141B2 (en) 2025-07-08
KR20230138475A (ko) 2023-10-05
WO2022171321A1 (de) 2022-08-18

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