KR20230128061A - 광전변환장치, 광 검출 시스템, 및 이동체 - Google Patents

광전변환장치, 광 검출 시스템, 및 이동체 Download PDF

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Publication number
KR20230128061A
KR20230128061A KR1020237025759A KR20237025759A KR20230128061A KR 20230128061 A KR20230128061 A KR 20230128061A KR 1020237025759 A KR1020237025759 A KR 1020237025759A KR 20237025759 A KR20237025759 A KR 20237025759A KR 20230128061 A KR20230128061 A KR 20230128061A
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KR
South Korea
Prior art keywords
photoelectric conversion
conversion device
exposure period
signal
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237025759A
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English (en)
Korean (ko)
Inventor
야스하루 오타
카즈히로 모리모토
Original Assignee
캐논 가부시끼가이샤
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Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20230128061A publication Critical patent/KR20230128061A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H01L31/02027—
    • H01L31/107—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4406—Plural ranges in circuit, e.g. switchable ranges; Adjusting sensitivity selecting gain values
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4413—Type
    • G01J2001/442—Single-photon detection or photon counting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/444—Compensating; Calibrating, e.g. dark current, temperature drift, noise reduction or baseline correction; Adjusting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/448—Array [CCD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020237025759A 2021-01-07 2022-01-05 광전변환장치, 광 검출 시스템, 및 이동체 Pending KR20230128061A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2021-001441 2021-01-07
JP2021001441 2021-01-07
JP2021207158A JP7661212B2 (ja) 2021-01-07 2021-12-21 光電変換装置、光検出システム
JPJP-P-2021-207158 2021-12-21
PCT/JP2022/000096 WO2022149576A1 (ja) 2021-01-07 2022-01-05 光電変換装置、光検出システム

Publications (1)

Publication Number Publication Date
KR20230128061A true KR20230128061A (ko) 2023-09-01

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KR1020237025759A Pending KR20230128061A (ko) 2021-01-07 2022-01-05 광전변환장치, 광 검출 시스템, 및 이동체

Country Status (5)

Country Link
US (1) US20230343879A1 (https=)
EP (1) EP4277263A4 (https=)
JP (1) JP7661212B2 (https=)
KR (1) KR20230128061A (https=)
WO (1) WO2022149576A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7218191B2 (ja) * 2019-01-30 2023-02-06 キヤノン株式会社 光電変換装置、撮像システム、移動体
JP7725332B2 (ja) * 2021-10-20 2025-08-19 キヤノン株式会社 光電変換装置、光電変換システム、移動体、機器
KR20230061032A (ko) * 2021-10-28 2023-05-08 삼성전자주식회사 이미지 센서, 영상 획득 장치 및 이를 포함하는 전자 장치
JP2024038655A (ja) * 2022-09-08 2024-03-21 キヤノン株式会社 光電変換装置
JP7686683B2 (ja) * 2023-02-10 2025-06-02 キヤノン株式会社 撮像装置、撮像装置の制御方法およびプログラム
JPWO2024203275A1 (https=) 2023-03-28 2024-10-03
JP2026049825A (ja) 2024-09-09 2026-03-19 キヤノン株式会社 撮像装置、撮像方法、プログラム

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2020123847A (ja) 2019-01-30 2020-08-13 キヤノン株式会社 光電変換装置、撮像システム、移動体

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Publication number Priority date Publication date Assignee Title
JP3029363B2 (ja) * 1993-08-23 2000-04-04 株式会社東芝 固体撮像装置
JP7129182B2 (ja) 2017-06-23 2022-09-01 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP7193926B2 (ja) 2018-04-23 2022-12-21 キヤノン株式会社 撮像装置及びその制御方法、プログラム、記憶媒体
JP6852041B2 (ja) 2018-11-21 2021-03-31 キヤノン株式会社 光電変換装置及び撮像システム
JP7218191B2 (ja) 2019-01-30 2023-02-06 キヤノン株式会社 光電変換装置、撮像システム、移動体
WO2020179928A1 (ja) 2019-03-07 2020-09-10 ソニーセミコンダクタソリューションズ株式会社 受光装置
JP7123861B2 (ja) 2019-06-19 2022-08-23 Ykk Ap株式会社 シャッターユニット
TWI867078B (zh) * 2019-11-19 2024-12-21 日商索尼半導體解決方案公司 固態攝像裝置及電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020123847A (ja) 2019-01-30 2020-08-13 キヤノン株式会社 光電変換装置、撮像システム、移動体

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Publication number Publication date
WO2022149576A1 (ja) 2022-07-14
JP2022106660A (ja) 2022-07-20
EP4277263A4 (en) 2024-07-31
US20230343879A1 (en) 2023-10-26
JP7661212B2 (ja) 2025-04-14
EP4277263A1 (en) 2023-11-15
JP2025092560A (ja) 2025-06-19

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