KR20230031835A - 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 - Google Patents

대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 Download PDF

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KR20230031835A
KR20230031835A KR1020227044577A KR20227044577A KR20230031835A KR 20230031835 A KR20230031835 A KR 20230031835A KR 1020227044577 A KR1020227044577 A KR 1020227044577A KR 20227044577 A KR20227044577 A KR 20227044577A KR 20230031835 A KR20230031835 A KR 20230031835A
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substrate
layer
group iii
epitaxial growth
iii nitride
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Korean (ko)
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요시히로 쿠보타
미노루 카와하라
마사토 야마다
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신에쓰 가가꾸 고교 가부시끼가이샤
신에쯔 한도타이 가부시키가이샤
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KR1020227044577A 2020-07-01 2021-05-18 대구경 iii족 질화물계 에피택셜 성장용 기판과 그 제조 방법 Ceased KR20230031835A (ko)

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Application Number Priority Date Filing Date Title
JP2020114475A JP7618401B2 (ja) 2020-07-01 2020-07-01 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法
JPJP-P-2020-114475 2020-07-01
PCT/JP2021/018734 WO2022004165A1 (ja) 2020-07-01 2021-05-18 大口径ｉｉｉ族窒化物系エピタキシャル成長用基板とその製造方法

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KR20230031835A true KR20230031835A (ko) 2023-03-07

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US (1) US20230257905A1 (https=)
EP (1) EP4177384A4 (https=)
JP (1) JP7618401B2 (https=)
KR (1) KR20230031835A (https=)
CN (1) CN115997050A (https=)
TW (1) TWI900595B (https=)
WO (1) WO2022004165A1 (https=)

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JP7484773B2 (ja) * 2021-03-04 2024-05-16 信越半導体株式会社 紫外線発光素子用エピタキシャルウェーハの製造方法、紫外線発光素子用基板の製造方法及び紫外線発光素子用エピタキシャルウェーハ
JP7657530B2 (ja) * 2021-12-28 2025-04-07 信越化学工業株式会社 高特性エピタキシャル成長用基板とその製造方法
CN218351409U (zh) * 2022-06-30 2023-01-20 苏州晶湛半导体有限公司 一种半导体结构
JP2025007662A (ja) 2023-07-03 2025-01-17 信越半導体株式会社 ＧａＮエピタキシャル膜の製造方法及び半導体デバイスの製造方法
JP7656661B2 (ja) * 2023-08-03 2025-04-03 Ｄｏｗａエレクトロニクス株式会社 ＡｌＮテンプレート基板およびその製造方法
CN117476831B (zh) * 2023-12-20 2024-03-19 青禾晶元(晋城)半导体材料有限公司 Led外延片及其制备方法、led芯片及其制备方法
JP2026007507A (ja) * 2024-07-03 2026-01-16 信越化学工業株式会社 Ｉｉｉ族窒化物エピタキシャル成長用基板、その製造方法、並びにそれを用いたエピタキシャル膜および半導体デバイスの製造方法

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JP4565042B1 (ja) 2009-04-22 2010-10-20 株式会社トクヤマ Ｉｉｉ族窒化物結晶基板の製造方法
JP6626607B2 (ja) 2016-06-14 2019-12-25 クロミス，インコーポレイテッド 電力およびｒｆ用途用の設計された基板構造

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