KR20230028323A - 본질적으로 강유전성인 hf-zr을 포함하는 막 - Google Patents

본질적으로 강유전성인 hf-zr을 포함하는 막 Download PDF

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KR20230028323A
KR20230028323A KR1020227046363A KR20227046363A KR20230028323A KR 20230028323 A KR20230028323 A KR 20230028323A KR 1020227046363 A KR1020227046363 A KR 1020227046363A KR 20227046363 A KR20227046363 A KR 20227046363A KR 20230028323 A KR20230028323 A KR 20230028323A
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crystalline material
approximately
less
ferroelectric
formula
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비제이 크리스 나라심한
장 세바스티앙 엠 렌
칼 리트타우
제이콥 우드러프
라빈드라 칸졸리아
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메르크 파텐트 게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
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    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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KR1020227046363A 2020-06-17 2021-06-15 본질적으로 강유전성인 hf-zr을 포함하는 막 Pending KR20230028323A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063040097P 2020-06-17 2020-06-17
US63/040,097 2020-06-17
PCT/EP2021/066028 WO2021254989A1 (en) 2020-06-17 2021-06-15 Inherently ferroelectric hf-zr containing films

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KR20230028323A true KR20230028323A (ko) 2023-02-28

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US (1) US20230089523A1 (https=)
EP (1) EP4168606A1 (https=)
JP (1) JP7745573B2 (https=)
KR (1) KR20230028323A (https=)
CN (1) CN115516130A (https=)
IL (1) IL298113A (https=)
TW (1) TW202216606A (https=)
WO (1) WO2021254989A1 (https=)

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* Cited by examiner, † Cited by third party
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US20220352379A1 (en) * 2021-04-29 2022-11-03 Taiwan Semiconductor Manufacturing Company Limited Ferroelectric memory devices having improved ferroelectric properties and methods of making the same
WO2023191981A1 (en) * 2022-03-29 2023-10-05 Tokyo Electron Limited Bilayer stack for a ferroelectric tunnel junction and method of forming
US12274068B2 (en) * 2022-05-09 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming ferroelectric memory device
EP4541155A1 (en) * 2022-07-20 2025-04-23 Versum Materials US, LLC Optimization of bottom electrode for the enhancement of ferroelectric performance in hafnia-based oxide with back-end-of-line (beol) compatible process
CN116133514A (zh) * 2023-03-03 2023-05-16 湘潭大学 一种改善叠层氧化铪基铁电薄膜性能的方法及其叠层铁电薄膜
TWI902171B (zh) * 2024-03-14 2025-10-21 國立成功大學 利用具極化場之基板的鐵電薄膜生產方法

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GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
WO2007140813A1 (en) * 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
DE102007002962B3 (de) * 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
CN107134487B (zh) * 2017-06-06 2020-07-14 湘潭大学 一种基于氧化铪的铁电栅结构及其制备工艺
WO2018231210A1 (en) * 2017-06-14 2018-12-20 Intel Corporation Thin film ferroelectric materials and methods of fabrication thereof
US10833150B2 (en) * 2018-07-11 2020-11-10 International Business Machines Corporation Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
TWI809158B (zh) * 2018-07-26 2023-07-21 日商東京威力科創股份有限公司 針對半導體元件形成晶體穩定的鐵電性鉿鋯基膜的方法
US10707320B2 (en) * 2018-10-19 2020-07-07 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistors with ferroelectric dielectric materials
JP7582672B2 (ja) * 2019-04-26 2024-11-13 国立大学法人東京科学大学 強誘電性膜の製造方法、強誘電性膜、及びその用途

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CN115516130A (zh) 2022-12-23
IL298113A (en) 2023-01-01
US20230089523A1 (en) 2023-03-23
EP4168606A1 (en) 2023-04-26
WO2021254989A1 (en) 2021-12-23
TW202216606A (zh) 2022-05-01
JP2023531194A (ja) 2023-07-21
JP7745573B2 (ja) 2025-09-29

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