KR20220132819A - Tantalum capacitor and manufacturing methhod the same - Google Patents

Abstract

The present invention provides a tantalum capacitor and a manufacturing method thereof. The tantalum capacitor comprises: a tantalum body which has a tantalum wire exposed through one surface; a capsule unit which encapsulates the tantalum body so as to expose an end of the tantalum wire; a first external electrode which is disposed on a lower surface and one end surface of the capsule unit, and is connected to the tantalum wire; and a second external electrode which is disposed on the lower surface of the capsule unit, and is connected to the tantalum body.

Description

Tantalum capacitor and manufacturing method thereof

The present invention relates to a tantalum capacitor and a method for manufacturing the same.

A tantalum capacitor is an electronic component used in passive component-intensive products such as TVs, mobiles, notebook computers, tablet PCs, and automotive electronic components.

Recently, the demand for a tantalum capacitor capable of implementing a small size and high capacity is increasing, and for this purpose, it is necessary to make the size of the tantalum body as large as possible.

For this reason, a tantalum capacitor having a so-called frameless structure in which a lower electrode used as a terminal is connected to a tantalum body and a tantalum wire without using a separate connection frame has been disclosed.

However, in the conventional frameless tantalum capacitor, since the cathode and the anode have to be electrically connected to the electrode, for this purpose, sputtering and plating must be performed on both sides of the encapsulation part covering the tantalum body, and by this process, the floor area ratio loss may occur.

Japanese Patent 5158966

It is an object of the present invention to provide a tantalum capacitor capable of maximizing a floor area ratio in the same size and a method for manufacturing the same.

One aspect of the present invention, a tantalum body having a tantalum wire exposed on one side; an encapsulation unit encapsulating the tantalum body so that an end of the tantalum wire is exposed; a first external electrode disposed on a lower surface and one end surface of the encapsulation unit and connected to the tantalum wire; and a second external electrode disposed on a lower surface of the capsule part and connected to the tantalum body. It provides a tantalum capacitor comprising a.

In an embodiment of the present invention, a conductive bonding agent disposed between the tantalum body and the second external electrode may be further included.

In an embodiment of the present invention, an insulating part formed on a lower surface of the encapsulation part to separate the first external electrode and the second external electrode may be further included.

In an embodiment of the present invention, the first external electrode may include a mounting part disposed on the lower surface of the capsule part, and a connection part extending from the mounting part to the egg end surface of the capsule part.

In an embodiment of the present invention, an insulating part disposed between the mounting part of the first external electrode and the lower surface of the encapsulation part may be further included.

In an embodiment of the present invention, an area of a portion exposed downwardly of the second external electrode may be larger than an area of a mounting portion of the first external electrode.

According to another aspect of the present invention, there is provided a method comprising: forming a lower copper layer on a lower surface of a carrier member, and forming an upper copper layer of two layers on an upper surface of the carrier member; primary lamination of a first photo resist on the upper copper layer; forming a groove in the first photoresist by first performing exposure and development; forming a first plating layer on the exposed upper upper copper layer by performing primary plating in the groove; forming a second photoresist to cover an upper surface of the first photoresist and an upper surface of the first plating layer by performing secondary lamination; forming a groove in the second photoresist by performing secondary exposure and development, and performing secondary plating in the groove to form a second plating layer on the exposed first plating layer; mounting a tantalum body on the second plating layer so that the second plating layer and the tantalum body are in contact; forming an encapsulant to surround the tantalum body and the tantalum wire; removing the carrier member; etching and removing the upper copper layer so that a lower surface of the first photoresist and a lower surface of the first plating layer are exposed; performing a dicing process to expose the tantalum wire to one surface of the encapsulation part; and forming a third plating layer to be connected to the tantalum wire and the first plating layer by plating one surface of the capsule part; It provides a method of manufacturing a tantalum capacitor comprising a.

In another aspect of the present invention, there is provided a method comprising: forming a lower copper layer on a lower surface of a carrier member, and forming an upper copper layer of two layers on an upper surface of the carrier member; first laminating a third photo resist on the upper copper layer; forming a groove in a third photoresist by first performing exposure and development; etching and removing the upper upper copper layer from the upper copper layer of the grooved portion, leaving only a portion of the upper upper copper layer covered with the third photoresist, and then removing the third photoresist; forming a first photoresist to cover the upper copper layer by performing secondary lamination; secondly performing exposure and development to form a groove in the first photoresist to expose the upper upper copper layer, and then performing plating to form a plating layer on the exposed upper upper copper layer; mounting a tantalum body on the plating layer so that the plating layer and the tantalum body are in contact; forming an encapsulant to surround the tantalum body and the tantalum wire; removing the carrier member; removing the lower upper copper layer by etching the upper copper layer so that the lower surface of the first photoresist and the lower surface of the upper upper copper layer are exposed; performing a dicing process to expose the tantalum wire to one surface of the encapsulation part; and forming a second plating layer to be connected to the tantalum wire and the first plating layer by plating one surface of the capsule part; It provides a method of manufacturing a tantalum capacitor comprising a.

In an embodiment of the present invention, in the step of forming the upper copper layer on the upper surface of the carrier member, the thickness of the upper upper copper layer may be formed to be thinner than the thickness of the lower upper copper layer.

In an embodiment of the present invention, in the step of forming the upper copper layer on the upper surface of the carrier member, the roughness of the surface facing the carrier member in the lower upper copper layer may be smaller than the roughness of the opposite surface.

According to an embodiment of the present invention, the first external electrode is disposed on the lower surface and one end surface of the capsule part to be connected to the tantalum wire, and the second external electrode is disposed on the lower surface of the capsule part and connected to the tantalum body, so that the size of the tantalum body There is an effect that the area ratio of the tantalum capacitor can be improved by expanding the tantalum capacitor.

1 is a transparent perspective view schematically showing a tantalum capacitor according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line II′ of FIG. 1 .
3 is a graph showing a comparison of the area ratio of a tantalum capacitor according to an embodiment of the present invention and a conventional tantalum capacitor.
4A to 4L are cross-sectional views sequentially illustrating a method of manufacturing a tantalum capacitor according to an embodiment of the present invention.
5 to 5M are cross-sectional views sequentially illustrating a method of manufacturing a tantalum capacitor according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below.

In addition, the embodiments of the present invention are provided in order to more completely explain the present invention to those with average knowledge in the art.

The shapes and sizes of elements in the drawings may be exaggerated for clearer description.

In addition, if the direction is defined to clearly describe the embodiment of the present invention, the direction in which the tantalum wire is exposed in the tantalum body is set to the front, the direction opposite to the front is set to the rear, and the longitudinal direction of the tantalum body It will be described by setting both sides of the tantalum body as both end surfaces and both sides in the thickness direction of the tantalum body as the upper surface and the lower surface.

In addition, X, Y, and Z indicated in the drawings indicate a longitudinal direction, a width direction, and a thickness direction of the tantalum capacitor, the tantalum body, and the encapsulant, respectively.

1 is a transparent perspective view schematically showing a tantalum capacitor according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line II′ of FIG. 1 .

1 and 2 , the tantalum capacitor 100 according to the present embodiment includes a tantalum body 110 , an encapsulation unit 120 , and first and second external electrodes 130 and 140 .

The tantalum body 110 may be formed of a tantalum material, for example, a tantalum powder and a binder are mixed in a certain ratio and stirred, and the mixed powder is compressed to form a substantially rectangular parallelepiped, and then sintered under high temperature and high vibration. can be produced

In addition, the tantalum body 110 has a tantalum wire 111 exposed through one cross-section in the front.

The tantalum wire 111 may be mounted by inserting the tantalum powder and the binder into the mixture so as to be eccentric from the center before the powder mixed with the tantalum powder and the binder is compressed.

That is, the tantalum body 110 may be manufactured by inserting a tantalum wire 111 into a tantalum powder mixed with a binder, forming a tantalum element of a desired size, and then sintering the tantalum element in a high temperature and high vacuum atmosphere.

The encapsulation part 120 encapsulates the tantalum body 110 so that the tantalum wire 111 is exposed through the fourth surface, which is one cross-section.

The encapsulation part 120 may be formed by transfer molding a resin such as EMC (epoxy molding compound) to surround the tantalum body 120 .

In this case, if necessary, the encapsulation part may be made of a photocurable epoxy compound.

The capsule part 120 may serve to protect the tantalum wire 111 and the tantalum body 110 from the outside.

The second external electrode 140 may be made of a conductive metal, be exposed to the lower surface of the capsule part 120 , and may be electrically connected to the tantalum body 110 .

In this case, the second external electrode 140 has a bottom electrode structure and may include upper and lower first and second layers 141 and 142 .

The first layer 141 is a portion in which the tantalum body 110 is disposed on the upper surface and is electrically connected to the tantalum body 110 , and the second layer 142 is exposed to the lower side so that the terminal of the tantalum capacitor is mounted on a substrate or the like. part that plays a role.

Also, a conductive bonding material 160 including, for example, silver (Ag) may be disposed between the tantalum body 110 and the first layer 141 of the second external electrode 140 .

At this time, since the conductive bonding material 160 is not exposed to the outside, the amount of use can be reduced compared to the conventional frameless structure.

The first external electrode 130 may be made of a conductive metal, is spaced apart from the second external electrode 140 in the X-direction, which is the longitudinal direction of the tantalum body 110 , and is exposed to the lower surface of the encapsulation part 120 to form a tantalum capacitor. may serve as a terminal when mounted on a substrate or the like, and may be disposed on one end surface of the capsule part 120 to be electrically connected to the tantalum wire 111 .

The first external electrode 130 is disposed on the lower surface of the capsule part 120 and has a mounting part 132 serving as a terminal, and from one end of the mounting part 132 to the egg cross section of the capsule part 120 . It may include a connecting portion 131 that is extended to be connected to the tantalum wire 111 .

That is, the first external electrode 130 may be formed of an L-shaped electrode.

Also, in this embodiment, the second external electrode 140 is preferably formed to be larger than the mounting portion 132 of the first external electrode 130 .

More specifically, when the second layer 142 of the second external electrode 140 is formed to be smaller than the mounting portion 132 of the first external electrode 130, when the tantalum capacitor is mounted on the substrate, the first external electrode 130 ) of the connection part 131 , the bonding force is strengthened, and thus chip severing may occur. It is preferable to make it larger than the area of the part 132 .

In addition, the insulating part 150 may be formed on the lower surface of the capsule part 120 to insulate the first external electrode 130 and the second external electrode 140 apart from each other.

In this case, the insulating part 150 may be formed of two upper and lower layers, and may include a first insulating part 151 as an upper layer and a second insulating part 152 as a lower layer.

The first insulating part 151 may be positioned at a height corresponding to the first layer 141 of the second external electrode 140 in the Z direction, and may be in direct contact with the lower surface of the capsule part 120 .

In addition, the mounting part 132 is formed on the lower surface of the first insulating part 151 , and the first insulating part 151 is connected to the mounting part 132 of the first external electrode 130 and the lower surface of the capsule part 120 . It may be a structure positioned in between.

Accordingly, the first insulating part 151 not only prevents contact between the mounting part 132 of the first external electrode 130 and the first layer 141 of the second external electrode 140 , but also the tantalum body 110 . ) and the mounting portion 132 of the first external electrode 130 may be prevented from contacting each other.

The second insulating part 152 is located at a height corresponding to the second layer 142 of the second external electrode 140 and the mounting part 132 of the first external electrode 130 in the Z direction, and has a lower surface facing outward. It has an exposed structure.

The second insulating part 152 may prevent the mounting part 132 of the first external electrode 130 and the second layer 142 of the second external electrode 140 from contacting each other.

In general, the capacity of the tantalum capacitor is proportional to the size of the tantalum body contained therein, and the ratio of the tantalum body to the total tantalum capacitor is referred to as the area ratio.

As Comparative Example 1, there is a tantalum capacitor having a frameless structure among conventional tantalum capacitors.

In such a frameless tantalum capacitor, an insulator substrate is disposed on the lower surface of the encapsulation unit, and sputtering and plating are performed on both end surfaces of the encapsulation unit to electrically connect the lower surface electrode disposed on the lower surface of the substrate to the tantalum body and the tantalum wire, respectively. Accordingly, both the positive and negative external electrodes have an L-shape.

According to this structure, the volume of the tantalum body per unit area in the X-direction is reduced, so that the floor area ratio is reduced.

As another structure of the conventional tantalum capacitor, in the tantalum capacitor of Comparative Example 2, the anode electrode and the cathode electrode are not formed in an L-shape, but both are formed in a lower electrode structure, in which case there is a method of directly connecting the tantalum wire and the anode electrode .

However, in this case, an additional volume for bending or connecting the tantalum wire is required for electrical connection between the anode electrode and the tantalum wire, or a connecting member for connecting the tantalum wire and the anode electrode must be additionally disposed in the encapsulation part. Therefore, the overall area ratio of the tantalum capacitor may be reduced.

According to this embodiment, the first external electrode connected to the tantalum wire is formed of an L-shaped electrode, and the second external electrode connected to the tantalum body is formed of a bottom electrode structure, so that sputtering is performed while maintaining the conventional frameless area ratio. The process cost can be reduced by reducing the process from 2 times to 1 time.

In addition, since the tantalum body and the second external electrode are electrically connected to the bottom electrode structure through surface contact, the current path is reduced, thereby reducing the resistance (ESR) of the second external electrode, By reducing the thickness of the second external electrode and the thickness of the mounting portion of the first external electrode, an additional increase in floor area ratio can be expected.

3 is a graph showing comparison of the area ratios of Comparative Examples 1 and 2 and the tantalum capacitor according to the present invention.

In FIG. 3, 2012_1.0t is a tantalum capacitor having a length and width of 2.0mm×1.2mm and a height of 1.0mm, and 2012_0.65t is a tantalum capacitor having a length and width of 2.0mm×1.2mm and a height of 0.65mm. , 1005_0.65t is a tantalum capacitor having a length and width of 1.0 mm × 0.5 mm and a height of 0.65 mm.

And, #1, #4, and #7 are tantalum capacitors having the structure of Comparative Example 1, #2, #5, and #8 are tantalum capacitors having the structure of Comparative Example 2, #3, #6, #9 is a tantalum capacitor according to an embodiment of the present invention.

Referring to FIG. 3 , in the tantalum capacitors of all specifications, it can be seen that the tantalum capacitor of this embodiment has a higher floor area ratio than those of Comparative Examples 1 and 2.

Therefore, according to the present invention, a tantalum capacitor having the same size can realize a higher capacity than a tantalum capacitor having a conventional structure, and thus can have an advantage in miniaturization of the tantalum capacitor.

4A to 4L are cross-sectional views sequentially illustrating a method of manufacturing a tantalum capacitor according to an embodiment of the present invention.

An embodiment of a method of manufacturing a tantalum capacitor of the present invention will be described in detail with reference to FIGS. 4A to 4L.

Referring to FIG. 4A , the lower copper layer 3 of one or two layers is formed on the lower surface of the carrier member 1 formed of an insulator, and the upper copper layer of two layers is formed on the upper surface of the carrier member 1 . (2) is formed.

In addition, in the two upper copper layers 2 , a thickness of the upper upper copper layer may be thinner than a thickness of the lower upper copper layer.

In addition, since the roughness of the lower surface facing the carrier member 1 in the lower upper copper layer is smaller than the roughness of the upper surface of the lower upper copper layer, the upper surface of the lower upper copper layer may be formed to be relatively flatter than the lower surface.

Next, as shown in FIG. 4B , a first photoresist 4 is laminated on the upper copper layer 2 by primary lamination.

Next, as in FIG. 4C , exposure and development are performed to form a groove 41a in the first photoresist 41 , and as shown in FIG. 4D , in the groove 41a A first plating layer 21 is formed on the upper upper copper layer exposed by the groove 41a by performing primary plating.

At this time, since the boundary surface between the upper upper copper layer and the first plating layer 21 may not be clearly identified, the boundary line between the upper upper copper layer and the first plating layer 21 will be omitted from FIG. 4D .

Next, as in FIG. 4E , secondary lamination is performed to form the second photoresist 42 to cover the upper surface of the first photoresist 41 and the upper surface of the first plating layer 21 .

Next, as shown in FIG. 4F , a groove is formed in the second photoresist 42 by performing secondary exposure and development, and then secondary plating is performed in the groove to expose the groove. A second plating layer 22 is formed on the first plating layer 21 .

At this time, since the boundary surface between the first plating layer 21 and the second plating layer 22 may not be clearly identified, the display of the boundary line between the first plating layer 21 and the second plating layer 22 from FIG. 4F will be omitted. do.

Next, as shown in FIG. 4G , the tantalum body 110 is mounted on the second plating layer 22 so that the second plating layer 22 and the tantalum body 110 are in contact.

Next, as shown in FIG. 4H , the primary encapsulation part 120 ′ is formed to surround the tantalum body 110 and the tantalum wire 111 .

In this case, the primary encapsulation part 120 ′ may be formed by transfer molding a resin such as EMC (epoxy molding compound) to surround the tantalum body 120 .

Next, as shown in Fig. 4I, the carrier member 1 located below is removed.

At this time, the upper copper layer 2 includes the first and second plating layers 21 and 22 on the upper surface, and the tantalum body 110 and the capsule part 120 ′ are attached to the upper side, and the upper copper layer Only the carrier member 1 and the lower copper layer 3 can be easily removed while minimizing the damage of (2).

In addition, when the roughness of the lower surface of the lower upper copper layer is made smaller than the roughness of the upper surface of the lower upper copper layer in the process of forming the upper copper layer on the upper surface of the carrier member 1 , the lower side when the carrier member 1 is removed The bonding force between the upper copper layer and the upper upper copper layer is greater than the bonding force between the carrier member 1 and the lower upper copper layer.

Accordingly, even if a portion of the lower upper copper layer is removed, the upper upper copper layer may maintain a state attached to the lower surface of the first photoresist 41 and the first plating layer 21 .

Next, as shown in FIG. 4J , the upper copper layer 2 is removed by etching the lower surface on which the upper copper layer 2 is formed, and thus the lower surface of the first photoresist 41 and the lower surface of the first plating layer 21 . It should be exposed downwards.

Next, as in FIG. 4K , a dicing process is performed to expose the tantalum wire 111 to one surface of the capsule part 120 .

Next, as in FIG. 4L , a third plating layer is formed by performing a third plating on one end surface of the capsule part 120 .

The third plating layer is a portion that is connected to the tantalum wire 111 to become the connection portion 131 of the first external electrode 130 , and the lower end of the first plating layer becomes the mounting portion 132 of the first external electrode 130 . (21) to be connected.

By the above process, the first external electrode 130 including the first and third plating layers is formed, and the first and second plating layers 21 and 22 on which the tantalum body 110 is mounted are the second external electrodes 140 . ), the first and second photoresists 41 and 42 positioned between the first and second external electrodes 130 and 140 and between the tantalum body and the first plating layer are formed by the first and second external electrodes 130 . , 140 may be an insulating part 150 that electrically insulates.

In addition, the tantalum capacitor manufactured according to the present invention has an advantage in that it is not necessary to separately mark the positive electrode and the negative electrode even when looking at the external appearance of the positive electrode and the negative electrode.

5A to 5M are cross-sectional views sequentially illustrating a method of manufacturing a tantalum capacitor according to another exemplary embodiment of the present invention.

Another embodiment of a method of manufacturing a tantalum capacitor of the present invention will be described in detail with reference to FIGS. 5A to 5M .

Referring to FIG. 5A , a lower copper layer 3 is formed on the lower surface of the carrier member 1 formed of an insulator, and an upper copper layer 2 of two layers is formed on the upper surface of the carrier member 1 .

In this case, the thickness of the upper upper copper layer in the two upper copper layers 2 may be thinner than the thickness of the lower upper copper layer.

In addition, since the roughness of the lower surface facing the carrier member 1 in the lower upper copper layer is smaller than the roughness of the upper surface of the lower upper copper layer, the upper surface of the lower upper copper layer may be formed to be relatively flatter than the lower surface.

Next, as shown in FIG. 5B , a third photoresist (5, photo resist) is first laminated on the upper copper layer 2 .

Next, as in FIG. 5C , exposure and development are performed to form a groove 51a in the third photoresist 51 , and as shown in FIG. 5D , the groove 51a is formed The upper upper copper layer is etched away from the upper copper layer 2 of the formed portion.

Accordingly, only a portion of the upper upper copper layer 21 ′ covered with the third photoresist 51 remains. Then, as in FIG. 5E , the third photoresist 51 is removed.

Next, as shown in FIG. 5F , a first photoresist 4 ′ is formed to cover the upper copper layers 2 and 21 ′ by performing secondary lamination.

Next, as in FIG. 5G, a groove 41a is formed to expose the upper upper copper layer 21' in the first photoresist 41' by performing secondary exposure and development. After that, as shown in FIG. 5H, plating is performed to form a plating layer 22' on the upper upper copper layer 21' exposed by the groove 41a.

At this time, since the boundary surface between the upper upper copper layer 21' and the plating layer 22' may not be clearly identified, the boundary line between the upper upper copper layer 2'1 and the plating layer 22 is omitted from FIG. 5H. decide to do

Next, as shown in FIG. 5I , the tantalum body 110 is mounted on the plating layer 22 ′ so that the plating layer 22 ′ and the tantalum body 110 are in contact.

Next, as shown in FIG. 5J , the primary capsule part 120 ′ is formed to surround the tantalum body 110 and the tantalum wire 111 ′.

Next, as in Fig. 5K, the carrier member 1 is removed.

At this time, the upper copper layer 2 includes a plating layer 22' on the upper surface, and the carrier member 1 and the lower copper layer ( 3) can be easily removed.

In addition, when the roughness of the lower surface of the lower upper copper layer is made smaller than the roughness of the upper surface of the lower upper copper layer in the process of forming the upper copper layer on the upper surface of the carrier member 1 , the lower side when the carrier member 1 is removed The bonding force between the upper copper layer and the upper upper copper layer is greater than the bonding force between the carrier member 1 and the lower upper copper layer.

Accordingly, even if a portion of the lower upper copper layer is removed, the upper upper copper layer 21 ′ may maintain a state attached to the lower surface of the first photoresist 41 ′ and the plating layer 22 ′.

Next, the lower upper copper layer 2 is removed by etching the lower surface on which the upper copper layer 2 is formed, so that the lower surface of the first photoresist 41 ′ and the lower surface of the upper upper copper layer 21 ′ are exposed. do.

Next, as in 5L, a dicing process is performed to expose the tantalum wire 111 to one surface of the capsule part 120 .

Next, as in FIG. 5M , a second plating layer is formed by performing secondary plating on one end surface of the capsule part 120 .

The second plating layer is a portion that is connected to the tantalum wire 111 to become the connection part 131 of the first external electrode 130 , and in this case, the lower end of the first plating layer becomes the mounting part 132 of the first external electrode 130 . (21') to be connected.

Through the above process, the first external electrode 130 including the first and second plating layers is formed, and the plating layer 22 ′ on which the tantalum body 110 is mounted becomes the second external electrode 140 , and the first and an insulating portion 150 in which a first photoresist 41 ′ positioned between the second external electrodes 130 and 140 and between the tantalum body and the plating layer electrically insulates the first and second external electrodes 130 and 140 . ) can be

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and variations are possible within the scope without departing from the technical spirit of the present invention described in the claims. It will be apparent to those of ordinary skill in the art.

100: tantalum capacitor
110: tantalum body
111: tantalum wire
120, 120': capsule part
130, 140: first and second external electrodes
131: connection part
132: mounting unit
150: insulation
160: conductive bonding agent

Claims (10)

a tantalum body having a tantalum wire exposed on one side;
an encapsulation unit encapsulating the tantalum body so that an end of the tantalum wire is exposed;
a first external electrode disposed on a lower surface and one end surface of the encapsulation unit and connected to the tantalum wire; and
a second external electrode disposed on a lower surface of the capsule part and connected to the tantalum body; A tantalum capacitor comprising a.
According to claim 1,
The tantalum capacitor further comprising a conductive bonding agent disposed between the tantalum body and the second external electrode.
The tantalum capacitor of claim 1 , further comprising an insulating part formed on a lower surface of the encapsulation part to space the first external electrode and the second external electrode apart.
The method of claim 1,
The first external electrode includes a mounting portion disposed on a lower surface of the encapsulation portion, and a connection portion extending from the mounting portion to an egg end surface of the encapsulation portion.
5. The method of claim 4,
The tantalum capacitor further comprising an insulating part disposed between the mounting part of the first external electrode and the lower surface of the encapsulation part.
5. The method of claim 4,
An area of a portion exposed downwardly of the second external electrode is larger than an area of a mounting portion of the first external electrode.
forming a lower copper layer on a lower surface of the carrier member and forming an upper copper layer of two layers on an upper surface of the carrier member;
primary lamination of a first photo resist on the upper copper layer;
forming a groove in the first photoresist by first performing exposure and development;
forming a first plating layer on the exposed upper upper copper layer by performing primary plating in the groove;
forming a second photoresist to cover an upper surface of the first photoresist and an upper surface of the first plating layer by performing secondary lamination;
forming a groove in the second photoresist by performing secondary exposure and development, and performing secondary plating in the groove to form a second plating layer on the exposed first plating layer;
mounting a tantalum body on the second plating layer so that the second plating layer and the tantalum body are in contact;
forming an encapsulant to surround the tantalum body and the tantalum wire;
removing the carrier member;
etching and removing the upper copper layer so that a lower surface of the first photoresist and a lower surface of the first plating layer are exposed;
performing a dicing process to expose the tantalum wire to one surface of the encapsulation part; and
forming a third plating layer to be connected to the tantalum wire and the first plating layer by plating one surface of the capsule part; A method of manufacturing a tantalum capacitor comprising a.
forming a lower copper layer on a lower surface of the carrier member and forming an upper copper layer of two layers on an upper surface of the carrier member;
first laminating a third photo resist on the upper copper layer;
forming a groove in a third photoresist by first performing exposure and development;
etching and removing the upper upper copper layer from the upper copper layer of the grooved portion, leaving only a portion of the upper upper copper layer covered with the third photoresist, and then removing the third photoresist;
forming a first photoresist to cover the upper copper layer by performing secondary lamination;
secondly performing exposure and development to form a groove in the first photoresist to expose the upper upper copper layer, and then performing plating to form a plating layer on the exposed upper upper copper layer;
mounting a tantalum body on the plating layer so that the plating layer and the tantalum body are in contact;
forming an encapsulant to surround the tantalum body and the tantalum wire;
removing the carrier member;
removing the lower upper copper layer by etching the upper copper layer so that the lower surface of the first photoresist and the lower surface of the upper upper copper layer are exposed;
performing a dicing process to expose the tantalum wire to one surface of the encapsulation part; and
forming a second plating layer to be connected to the tantalum wire and the first plating layer by plating one surface of the capsule part; A method of manufacturing a tantalum capacitor comprising a.
9. The method according to claim 7 or 8,
In the step of forming an upper copper layer on the upper surface of the carrier member,
A method of manufacturing a tantalum capacitor such that a thickness of the upper upper copper layer is formed to be thinner than a thickness of the lower upper copper layer.
9. The method according to claim 7 or 8,
In the step of forming an upper copper layer on the upper surface of the carrier member,
A method of manufacturing a tantalum capacitor, wherein the roughness of a surface facing the carrier member in the lower upper copper layer is smaller than that of the opposite surface.

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