KR20220122641A - Semiconductor chip manufacturing method - Google Patents

Abstract

The following steps (S1) to (S4) are included in this order,
Step (S1): A step of preparing a semiconductor chip manufacturing wafer in which a groove portion as a line to be divided is formed on the bump formation surface of the semiconductor wafer having a bump formation surface having bumps without reaching the back surface
Step (S2): A first curable resin (x1) is pressed and affixed to the bump formation surface of the wafer for semiconductor chip production, and the bump formation surface of the wafer for semiconductor chip production is applied with a first curable resin (x1) The process of embedding the said 1st curable resin (x1) in the said groove part formed in the said wafer for semiconductor chip manufacture while coating|covering
- Process (S3): The process of hardening the said 1st curable resin (x1), and obtaining the wafer for semiconductor chip manufacture in which the 1st cured resin film (r1) was formed.
Step (S4): the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed is divided into pieces along the division scheduled line, so that at least the bump formation surface and the side surface are the first cured resin film r1 Process of obtaining a coated semiconductor chip
Further, after the step (S2), before the step (S3), after the step (S3), and before the step (S4), or in the step (S4), the following step (S -BG) was set as the manufacturing method of the semiconductor chip containing.
· Step (S-BG): A step of grinding the back surface of the wafer for manufacturing semiconductor chips

Description

Semiconductor chip manufacturing method

The present invention relates to a method for manufacturing a semiconductor chip. When it describes in more detail, this invention relates to the manufacturing method of the semiconductor chip in which the cured resin film is formed as a protective film.

DESCRIPTION OF RELATED ART In recent years, manufacture of the semiconductor device using the mounting method called a so-called face-down system is performed. In the face-down method, a semiconductor chip having bumps on a circuit surface and a substrate for mounting the semiconductor chip are laminated so that the circuit surface of the semiconductor chip and the substrate are opposite to each other, whereby the semiconductor chip is mounted on the substrate. do.

In addition, the said semiconductor chip is obtained by dividing the semiconductor wafer with bumps on the circuit surface normally.

In a semiconductor wafer provided with bumps, a protective film may be formed for the purpose of protecting the junction part (henceforth a "bump neck") between a bump and a semiconductor wafer.

For example, in patent document 1 and patent document 2, the laminated body in which the support base material, the adhesive layer, and the thermosetting resin layer were laminated|stacked in this order makes the thermosetting resin layer a bonding surface, and a semiconductor provided with bumps. After affixing by pressurizing to the bump formation surface of a wafer, the said thermosetting resin layer is heated and hardened|cured to form a protective film.

Japanese Laid-Open Patent Publication No. 2015-092594 Japanese Patent Laid-Open No. 2012-169484

In recent years, as the size and thickness of IC-mounted products, such as electronic devices, progress, the thickness of semiconductor chips is further demanded. However, when a semiconductor chip becomes thin, the intensity|strength of a semiconductor chip will fall. Therefore, for example, when conveying a semiconductor chip or performing a post-process of packaging a semiconductor chip, there exists a problem that a semiconductor chip becomes easy to damage.

Then, forming a protective film on the bump formation surface of a semiconductor wafer, while protecting a bump neck, aiming at the improvement of the intensity|strength of a semiconductor chip is considered. However, merely forming a protective film on the bump formation surface of the semiconductor wafer is insufficient to improve the strength of the semiconductor chip. Moreover, the said protective film may raise film|membrane peeling.

This invention is made|formed in view of such a problem, Comprising: While being excellent in intensity|strength, it makes it a subject to provide the method of manufacturing the semiconductor chip by which peeling of a protective film was suppressed.

The present inventors, by forming a protective film formed for the purpose of protecting the bump neck also on the side surface of the semiconductor chip, the strength of the semiconductor chip can be improved, peeling of the protective film can be suppressed, and a very reasonable configuration can be constructed I figured out what I could do. And as a result of repeating earnest examination based on the said idea, the manufacturing method which can implement|achieve the said idea was found out, and it came to complete this invention.

That is, the present invention relates to the following [1] to [14].

[1] including the following steps (S1) to (S4) in this order,

Step (S1): A step of preparing a semiconductor chip manufacturing wafer in which a groove portion as a line to be divided is formed on the bump formation surface of the semiconductor wafer having a bump formation surface having bumps without reaching the back surface

Step (S2): A first curable resin (x1) is pressed and affixed to the bump formation surface of the wafer for semiconductor chip production, and the bump formation surface of the wafer for semiconductor chip production is applied with a first curable resin (x1) The process of embedding the said 1st curable resin (x1) in the said groove part formed in the said wafer for semiconductor chip manufacture while coating|covering

- Process (S3): The process of hardening the said 1st curable resin (x1), and obtaining the wafer for semiconductor chip manufacture in which the 1st cured resin film (r1) was formed.

Step (S4): the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed is divided into pieces along the division scheduled line, so that at least the bump formation surface and the side surface are the first cured resin film r1 Process of obtaining a coated semiconductor chip

Further, after the step (S2), before the step (S3), after the step (S3), and before the step (S4), or in the step (S4), the following step (S -BG), the manufacturing method of a semiconductor chip containing.

· Step (S-BG): A step of grinding the back surface of the wafer for manufacturing semiconductor chips

[2] In the step (S2), a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the wafer for semiconductor chip production. It has a laminated structure. The method for manufacturing a semiconductor chip according to the above [1], wherein the first laminate (α1) is adhered by pressing the layer (X1) as a bonding surface.

[3] including the step (S-BG) after the step (S2) and before the step (S3);

In the step (S-BG), the first supporting sheet (α1) is removed from the first laminate (α1) after grinding the back surface of the wafer for semiconductor chip production in a state in which the first laminate (α1) is attached. Y1) is carried out by peeling,

In the step (S4), the portion of the first cured resin film r1 of the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed, which is formed in the groove portion, is cut along the division scheduled line. The method for manufacturing a semiconductor chip according to [2], which is implemented.

[4] including the step (S-BG) after the step (S3) and before the step (S4);

The step (S3) is performed without peeling the first support sheet (Y1) from the first laminate (α1),

In the step (S-BG), the first supporting sheet (α1) is removed from the first laminate (α1) after grinding the back surface of the wafer for semiconductor chip production in a state in which the first laminate (α1) is attached. Y1) is carried out by peeling,

In the step (S4), the portion of the first cured resin film r1 of the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed, which is formed in the groove portion, is cut along the division scheduled line. The method for manufacturing a semiconductor chip according to [2], which is implemented.

[5] including the step (S-BG) after the step (S3) and before the step (S4);

Peeling the first support sheet Y1 from the first laminate α1 after the step (S2) and before the step (S3);

In the step (S-BG), a back grind sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer for semiconductor chip production on which the first cured resin film (r1) is formed, After grinding the back surface of the wafer for semiconductor chip production in a state in which the back grind sheet (b-BG) is attached, the back grind sheet (b-BG) is removed from the wafer for semiconductor chip production on which the first cured resin film (r1) is formed. ) is carried out by peeling

In the step (S4), the portion of the first cured resin film r1 of the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed, which is formed in the groove portion, is cut along the division scheduled line. The method for manufacturing a semiconductor chip according to [2], which is implemented.

[6] Including the step (S-BG) in the step (S4),

Peeling the first support sheet Y1 from the first laminate α1 after the step (S2) and before the step (S3);

In the step (S4), the first cured resin film r1 of the wafer for semiconductor chip manufacturing on which the first cured resin film r1 is formed is formed in the groove portion along the dividing line. or, after forming a modified region along the line to be divided, as the step (S-BG), the first cured resin film (r1) of the semiconductor chip manufacturing wafer on which the first cured resin film (r1) is formed The semiconductor according to [2], which is carried out by attaching a back grind sheet (b-BG) to the surface of A method of manufacturing a chip.

[7] The method for manufacturing a semiconductor chip according to any one of [1] to [6], further comprising the following step (T).

- Process (T): Process of forming a 2nd cured resin film (r2) on the said back surface of the said wafer for semiconductor chip manufacture

[8] The method for manufacturing a semiconductor chip according to any one of [1] to [7], further comprising the following step (U).

Step (U): removing the first cured resin film r1 covering the top of the bump or the first cured resin film r1 adhering to a part of the top of the bump, exposing process

[9] The method for manufacturing a semiconductor chip according to [8], wherein the step (U) is performed by plasma etching treatment.

[10] Under the conditions of a temperature of 90° C. and a frequency of 1 Hz, a 400% strain is generated in the test piece of the layer (X1), and the shear modulus G' of the test piece of the layer (X1) is measured. The method for manufacturing a semiconductor chip according to any one of [1] to [9], wherein the shear modulus G' when used is 5.0 × 10 Pa to 1.0 × 10 ⁶ Pa.

[11] The method for manufacturing a semiconductor chip according to any one of [1] to [10], wherein the layer (X1) has a thickness of 10 µm or more and 200 µm or less.

[12] The method for manufacturing a semiconductor chip according to any one of [1] to [11], wherein the width of the groove portion is 10 µm to 2000 µm.

[13] The method for manufacturing a semiconductor chip according to any one of [1] to [12], wherein the depth of the groove is 30 µm to 700 µm.

[14] The method for manufacturing a semiconductor chip according to any one of [1] to [13], wherein the first cured resin film (r1) is transparent.

ADVANTAGE OF THE INVENTION According to this invention, while being excellent in intensity|strength, it becomes possible to provide the method of manufacturing the semiconductor chip by which peeling of a protective film was suppressed.

BRIEF DESCRIPTION OF THE DRAWINGS It is a process schematic of the manufacturing method of the semiconductor chip of this invention.
2 : is a top view which shows an example of the wafer for semiconductor chip manufacture prepared at a process (S1).
3 : is a schematic sectional drawing which shows an example of the wafer for semiconductor chip manufacture prepared at a process (S1).
4 : is a figure which shows the outline of a process (S2).
It is a figure which shows the outline of the manufacturing method which concerns on 1st Embodiment.
It is a figure which shows the outline of the manufacturing method which concerns on 2nd Embodiment.
7 : is a figure which shows the outline of the manufacturing method which concerns on 3rd Embodiment.
It is a figure which shows the outline of the manufacturing method which concerns on 4th Embodiment.
9 : is a schematic sectional drawing which shows the structure of the 1st laminated body (alpha)1 used for the manufacturing method of this invention.
10 : is a schematic sectional drawing which shows an example of the specific structure of the 1st laminated body (alpha)1.
11 is a schematic cross-sectional view showing another example of a specific configuration of the first laminate α1.
12 : is a schematic sectional drawing which shows still another example of the specific structure of the 1st laminated body (alpha)1.
13 : is a figure-substitute photograph which shows the back surface observation result in an Example.
Fig. 14 is a photograph substituted for drawings showing results of cross-sectional polishing observation in Examples.

In this specification, an "active ingredient" refers to a component except a dilution solvent, such as water and an organic solvent, among the components contained in the target composition.

In addition, in this specification, "(meth)acrylic acid" represents both "acrylic acid" and "methacrylic acid", and other similar terms are also the same.

In addition, in this specification, a weight average molecular weight and a number average molecular weight are polystyrene conversion values measured by the gel permeation chromatography (GPC) method.

In addition, in this specification, with respect to a preferable numerical range (for example, a range, such as content), the lower limit and upper limit described in stages can be combined independently, respectively. For example, from the description of "preferably 10 to 90, more preferably 30 to 60", combining "preferred lower limit (10)" and "more preferable upper limit (60)" to "10 to 60" You may.

[Method for manufacturing semiconductor chip of the present invention]

The process schematic of the manufacturing method of the semiconductor chip of this invention is shown in FIG.

The manufacturing method of the semiconductor chip of this invention is roughly the process of preparing the wafer for semiconductor chip manufacture (S1), the process of affixing the 1st laminated body (α1) (S2), The 1st curable resin (x1) is hardened It includes the step (S3) of making it into pieces and the step (S4) of making it into pieces, and further includes a step (S-BG) of grinding the back surface of the wafer for semiconductor chip production.

In detail, the manufacturing method of the semiconductor chip of this invention includes the following steps (S1) - (S4) in this order.

Step (S1): A step of preparing a semiconductor chip manufacturing wafer in which a groove portion as a line to be divided is formed on the bump formation surface of the semiconductor wafer having a bump formation surface having bumps without reaching the back surface

Step (S2): A first curable resin (x1) is pressed and affixed to the bump formation surface of the wafer for semiconductor chip production, and the bump formation surface of the wafer for semiconductor chip production is applied with a first curable resin (x1) The process of embedding the said 1st curable resin (x1) in the said groove part formed in the said wafer for semiconductor chip manufacture while coating|covering

- Process (S3): The process of hardening the said 1st curable resin (x1), and obtaining the wafer for semiconductor chip manufacture in which the 1st cured resin film (r1) was formed.

Step (S4): the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed is divided into pieces along the division scheduled line, so that at least the bump formation surface and the side surface are the first cured resin film r1 Process of obtaining a coated semiconductor chip

Further, after the step (S2), before the step (S3), after the step (S3), and before the step (S4), or in the step (S4), the following step (S -BG).

· Step (S-BG): A step of grinding the back surface of the wafer for manufacturing semiconductor chips

By the manufacturing method including the said process, not only the bump formation surface but the side surface were also coated with the 1st cured resin film r1, It is excellent in strength, and peeling of the 1st cured resin film r1 as a protective film does not occur easily. A semiconductor chip is obtained.

In addition, "coated" here means that the 1st cured resin film r1 was formed along the shape of a semiconductor chip on at least the bump formation surface and side surface of one semiconductor chip. That is, the present invention is clearly different from the encapsulation technique in which a plurality of semiconductor chips are confined in a resin.

Hereinafter, the manufacturing method of the semiconductor chip of this invention is described in detail for every process.

In addition, in the following description, a "semiconductor chip" is also simply referred to as a "chip", and a "semiconductor wafer" is also simply referred to as a "wafer".

[Process (S1)]

About an example of the semiconductor wafer prepared by process (S1), a top view is shown in FIG. 2, and a schematic sectional drawing is shown in FIG.

In step (S1), the groove part 13 as a division|segmentation line reaches the back surface 11b in the bump formation surface 11a of the semiconductor wafer 11 which has the bump formation surface 11a provided with the bump 12. The wafer 10 for semiconductor chip manufacture which is formed without performing is prepared.

In addition, in FIG. 2, the bump is abbreviate|omitted from illustration. In addition, in the drawings used in the following description, in order to make the characteristics of the present invention easy to understand, there are cases where the main parts are enlarged for convenience, and it can be said that the dimensional ratio of each component is the same as in reality. can't

The shape of the bump 12 is not specifically limited, Any shape may be sufficient as long as it can contact and fix to the electrode etc. on the board|substrate for chip mounting.

For example, in FIG. 3 , the bumps 12 are spherical, but the bumps 12 may be ellipsoids. The spheroid may be, for example, a spheroid extended in a vertical direction with respect to the bump formation surface 11a of the wafer 11 , or may be horizontally extended with respect to the bump formation surface 11a of the wafer 11 . An elongated spheroid may be sufficient. Moreover, the bump 12 may be pillar (pillar) shape.

The height of the bump 12 is not specifically limited, It changes suitably according to the request|requirement in design.

If illustrated, they are 30 micrometers - 300 micrometers, Preferably they are 60 micrometers - 250 micrometers, More preferably, they are 80 micrometers - 200 micrometers.

In addition, the "height of the bump 12" means the height at the site|part which exists in the highest position from the bump formation surface 11a, when paying attention to one bump.

It does not specifically limit also about the number of bumps 12, It changes suitably according to the request|requirement of a design.

The wafer 11 is a semiconductor wafer in which circuits, such as wiring, a capacitor, a diode, and a transistor, were formed in the surface, for example. The material of the said wafer is not specifically limited, For example, a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, a glass wafer, a sapphire wafer, etc. are mentioned.

Although the size of the wafer 11 is not specifically limited, From a viewpoint of improving batch processing efficiency, it is 8 inches (200 mm in diameter) or more normally, Preferably it is 12 inches (300 mm in diameter) or more. In addition, the shape of a wafer is not limited to a circle, For example, square shapes, such as a square and a rectangle, may be sufficient. In the case of a square wafer, it is preferable that the length of the longest side is the said size (diameter) or more from a viewpoint of improving batch processing efficiency as for the size of the wafer 11.

Although the thickness of the wafer 11 is not specifically limited, From a viewpoint of making it easy to suppress the curvature accompanying shrinkage at the time of hardening the 1st curable resin (x1), the back surface 11b of the wafer 11 in a subsequent process From a viewpoint of suppressing the amount of grinding of , and shortening the time required for back surface grinding, Preferably it is 100 micrometers - 1,000 micrometers, More preferably, they are 200 micrometers - 900 micrometers, More preferably, they are 300 micrometers - 800 micrometers.

In the bump formation surface 11a of the wafer 10 for semiconductor chip manufacture prepared in the process (S1), it is a division scheduled line at the time of dividing the wafer 10 for semiconductor chip manufacture into pieces, and the some groove part 13 is a grid|lattice form. is formed The plurality of grooves 13 are cut grooves formed when the blade wire dicing method (Dicing Before Grinding) is applied, and are formed to a depth shallower than the thickness of the wafer 11, and the deepest portion of the groove portion 13 is It is prevented from reaching the back surface 11b of the wafer 11 . The plurality of grooves 13 can be formed by dicing using a conventionally well-known wafer dicing apparatus having a dicing blade or the like. Further, the plurality of grooves 13 may be formed by dicing using a laser or the like instead of a blade.

In addition, the plurality of grooves 13 may be formed so that the semiconductor chip to be manufactured has a desired size and shape, and the grooves 13 do not necessarily have to be formed in a grid shape as shown in FIG. 2 . Moreover, although the size of a semiconductor chip is about 0.5 mm x 0.5 mm - 1.0 mm x 1.0 mm normally, it is not limited to this size.

The width of the groove portion 13 is preferably 10 µm to 2,000 µm, more preferably 50 µm to 1,000 µm, further preferably 100 µm from the viewpoint of making the embedding property of the first curable resin (x1) favorable. It is micrometer - 500 micrometers, More preferably, they are 100 micrometers - 300 micrometers.

The depth of the groove part 13 is adjusted according to the thickness of the wafer to be used and the required chip thickness, Preferably it is 30 micrometers - 700 micrometers, More preferably, it is 60 micrometers - 600 micrometers, More preferably, it is 100 micrometers - 500 micrometers. is μm.

The wafer 10 for semiconductor chip manufacture prepared in the step (S1) is provided in the step (S2).

[Process (S2)]

The outline of a process (S2) is shown in FIG.

At a process (S2), 1st curable resin (x1) is pressed and affixed to the bump formation surface 11a of the wafer 10 for semiconductor chip manufacture.

Here, from a viewpoint of the handleability of 1st curable resin (x1), it is preferable that 1st curable resin (x1) is laminated|stacked on the 1st support sheet Y1, and is used.

Therefore, in the step (S2), the layer (X1) of the first support sheet (Y1) and the first curable resin (x1) is laminated on the bump formation surface 11a of the wafer 10 for semiconductor chip production. It is preferable to press and affix the 1st laminated body (alpha1) which has the said layer (X1) as a sticking surface.

In the process (S2), as shown in FIG. 4, while coat|covering the bump formation surface 11a of the wafer 10 for semiconductor chip manufacture with 1st curable resin (x1), to the wafer 10 for semiconductor chip manufacture The first curable resin (x1) is embedded in the formed groove portion (13).

By embedding the 1st curable resin (x1) in the groove part 13 formed in the wafer 10 for semiconductor chip manufacture, when dividing the wafer 10 for semiconductor chip manufacture into pieces in the process (S4), it becomes a side surface of a semiconductor chip The portion may be coated with the first curable resin (x1). In other words, it is a precursor of the first cured resin film (r1) covering the side surface of the semiconductor chip, which is required to suppress peeling of the first cured resin film (r1) as a protective film while making the semiconductor chip excellent in strength. A coating can be formed by a process (S2).

In addition, the pressing force at the time of affixing the 1st laminated body (alpha) to the wafer 10 for semiconductor chip manufacture is preferable from a viewpoint of making the embedding property with respect to the groove part 13 of 1st curable resin (x1) favorable. is 1 kPa - 200 kPa, More preferably, it is 5 kPa - 150 kPa, More preferably, they are 10 kPa - 100 kPa.

In addition, you may fluctuate suitably from the initial stage of pasting to the final period of the pressing force at the time of sticking the 1st laminated body (alpha)1 on the wafer 10 for semiconductor chip manufacture. For example, from a viewpoint of making the embedding property of the 1st curable resin (x1) with respect to the groove part 13 more favorable, it is preferable to make a pressing force low in an affixing initial stage, and to raise a pressing force gradually.

Moreover, when affixing the 1st laminated body (α1) to the wafer 10 for semiconductor chip manufacture, when 1st curable resin (x1) is a thermosetting resin, in the groove part 13 of 1st curable resin (x1) It is preferable to heat from a viewpoint of making embedding property more favorable. When 1st curable resin (x1) is a thermosetting resin, fluidity|liquidity becomes high temporarily by heating, and 1st curable resin (x1) hardens by continuing a heating. Then, by heating within the range in which the fluidity|liquidity of 1st curable resin (x1) improves, 1st curable resin (x1) becomes easy to spread throughout the groove part 13, and the groove part of 1st curable resin (x1) (13) can be further improved.

As a specific heating temperature (sticking temperature), Preferably it is 50 degreeC - 150 degreeC, More preferably, it is 60 degreeC - 130 degreeC, More preferably, it is 70 degreeC - 110 degreeC.

In addition, the said heat processing performed with respect to 1st curable resin (x1) is not included in the hardening process of 1st curable resin (x1).

In addition, when affixing 1st laminated body (alpha)1 to the wafer 10 for semiconductor chip manufacture, it is preferable to carry out in a reduced pressure environment. Thereby, the groove part 13 becomes a negative pressure, and 1st curable resin x1 becomes easy to spread over the groove part 13 whole. As a result, the embedding property with respect to the groove part 13 of 1st curable resin (x1) becomes a more favorable thing. As a specific pressure of a reduced-pressure environment, Preferably they are 0.001 kPa - 50 kPa, More preferably, they are 0.01 kPa - 5 kPa, More preferably, they are 0.05 kPa - 1 kPa.

Moreover, the thickness of the layer (X1) of the 1st curable resin (x1) in the 1st laminated body (alpha) makes the embedding property with respect to the groove part 13 of the 1st curable resin (x1) more favorable. , preferably 10 μm or more, more preferably 20 μm or more, still more preferably 30 μm or more, even more preferably more than 30 μm. Moreover, Preferably it is 200 micrometers or less, More preferably, it is 150 micrometers or less, More preferably, it is 130 micrometers or less, More preferably, it is 100 micrometers or less, More preferably, it is 80 micrometers or less.

Here, the "thickness of the layer (X1) of the 1st curable resin (x1)" means the thickness of the entire layer (X1), for example, the thickness of the layer (X1) comprising a plurality of layers means the thickness of the layer (X1) ) means the thickness of the sum of all layers constituting it.

Further, the layer (X1) of the first curable resin (x1) has better embedding properties of the first curable resin (x1) in the grooves 13, under the conditions of a temperature of 90°C and a frequency of 1 Hz. , The shear modulus G' of the test piece of the layer (X1) is preferably 5.0 when the strain dispersion measurement is performed to generate a strain of 400% and measure the shear modulus G' of the test piece of the layer (X1). × 10 Pa to 1.0 × 10 ⁶ Pa, more preferably 1.0 × 10 ² Pa to 1.0 × 10 ⁵ Pa, still more preferably 1.0 × 10 ² Pa to 1.0 × 10 ⁴ Pa.

In addition, the shear modulus G' of the layer (X1) of 1st curable resin (x1) is a value measured before hardening 1st curable resin (x1).

In addition, the shear modulus G' can be adjusted by adjusting the composition etc. of 1st curable resin (x1).

Here, it is preferable that the 1st support sheet Y1 which the 1st laminated body α1 has supports the 1st curable resin x1 and has the function as a back grind sheet.

In this case, when grinding the back surface 11b of the wafer 11 in the state in which the first laminate α1 is affixed, the first support sheet Y1 functions as a back grind sheet, and the back grind process can be made easy to carry out.

[Step (S3), Step (S4), and Step (S-BG)]

By the process up to the said process (S2), the laminated body which stuck and laminated|stacked the 1st laminated body (alpha)1 on the wafer 10 for semiconductor chip manufacture is formed. It is preferable that the said laminated body is provided to the process which concerns on any one of 1st - 4th embodiment described below according to the implementation timing of a process (S-BG).

Hereinafter, the steps (S3) and (S4) will be described with respect to the first to fourth embodiments while crossing the description regarding the timing for performing the step (S-BG).

<First embodiment>

In the first embodiment, as shown in FIG. 1 , the step (S-BG) is performed after the step (S2) and before the step (S3).

Fig. 5 shows a schematic diagram according to the first embodiment.

(First embodiment: step (S-BG))

In the first embodiment, first, the step (S-BG) is performed. As specifically, shown to Fig.5 (1-a), the back surface 11b of the wafer 10 for semiconductor chip manufacture is ground in the state which stuck the 1st laminated body (alpha)1. "BG" in FIG. 5 means a back grind, and also in a following figure, it is the same. Next, as shown to Fig.5 (1-b), the 1st support sheet Y1 is peeled from the 1st laminated body (alpha)1.

The amount of grinding at the time of grinding the back surface 11b of the wafer 10 for semiconductor chip production is at least an amount in which the bottom of the groove portion 13 of the wafer 10 for semiconductor chip production is exposed. You may make it grind 1st curable resin (x1) embedded in the groove part 13 together with the wafer 10 for semiconductor chip manufacture.

In 1st Embodiment, in order to peel the 1st support sheet Y1 before implementing a process (S3), 1st curable resin (x1) is a thermosetting resin, and heat processing for hardening in a process (S3). Heat resistance is not required for the first support sheet Y1 even when . Accordingly, the degree of freedom in design of the first supporting sheet Y1 is improved.

(First embodiment: step (S3))

After performing the step (S-BG), the step (S3) is performed. As specifically, shown to FIG.5(1-c), 1st curable resin (x1) is hardened, and the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed is obtained.

The 1st cured resin film (r1) formed by hardening|curing 1st curable resin (x1) becomes firmer than 1st curable resin (x1) at normal temperature. Therefore, the bump neck is favorably protected by forming the 1st cured resin film r1. Moreover, in the process (S4) shown to (1-d) of FIG. 5, by dividing the wafer 10 for semiconductor chip manufacture with the 1st cured resin film r1 into pieces, the side view 1st cured resin film r1 It is possible to obtain a semiconductor chip coated with Furthermore, peeling of the 1st cured resin film r1 as a protective film is also suppressed.

(First embodiment: curing method)

According to the kind of curable component contained in 1st curable resin (x1), hardening of 1st curable resin (x1) can be performed by either thermosetting and hardening by irradiation of an energy ray.

In addition, in this specification, an "energy beam" means having an energy proton in an electromagnetic wave or a charged particle beam, and an ultraviolet-ray, an electron beam, etc. are mentioned as an example, Preferably it is an ultraviolet-ray.

As the conditions in the case of thermosetting, the curing temperature is preferably 90°C to 200°C, and the curing time is preferably 1 hour to 3 hours.

Conditions for curing by energy ray irradiation are appropriately set according to the type of energy ray to be used. For example, when using ultraviolet rays, the illuminance is preferably 170 mw/cm 2 to 250 mw/cm 2 and the amount of light is preferably 300 mJ/cm 2 to 3,000 mJ/cm 2 .

Here, in the process of hardening the 1st curable resin (x1) and forming the 1st cured resin film r1 WHEREIN: When filling the groove part 13 with the 1st curable resin (x1) in the process (S2), pinch It is preferable that 1st curable resin (x1) is a thermosetting resin from a viewpoint of removing the bubble etc. which may enter. That is, when 1st curable resin (x1) is a thermosetting resin, fluidity|liquidity becomes high temporarily by heating, and 1st curable resin (x1) hardens by continuing heating. By using this phenomenon, when the fluidity|liquidity of 1st curable resin (x1) becomes high, when filling the groove part 13 with 1st curable resin (x1), the bubble etc. which may get in are removed, 1st curable After making the embedding property with respect to the groove part 13 of resin (x1) into a more favorable state, 1st curable resin (x1) can be hardened.

Moreover, it is preferable that 1st curable resin (x1) is an energy-beam curable resin from a viewpoint of shortening of hardening time.

In addition, the detail of 1st curable resin (x1) for forming 1st cured resin film (r1) is mentioned later.

(First embodiment: step (S4))

After the step (S3) is performed, the step (S4) is performed. Specifically, as shown in FIG.5(1-d), the part formed in the groove part among the 1st cured resin film r1 of the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed. , cut along the line to be split.

Cutting can be performed suitably, employ|adopting conventionally well-known methods, such as blade dicing and laser dicing.

Thereby, the semiconductor chip 40 in which the bump formation surface 11a and the side surface are coat|covered with the 1st cured resin film r1 at least can be obtained.

Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are coat|covered with the 1st cured resin film r1, it has the outstanding intensity|strength. Moreover, since the bump formation surface 11a and the side surface are continuously covered with the 1st cured resin film r1 without breaking, the bonding surface (interface) of the bump formation surface 11a and the 1st cured resin film r1. This is not exposed in the side surface of the semiconductor chip 40 . Among the bonding surfaces (interfaces) of the bump formation surface 11a and the 1st cured resin film r1, the exposed part exposed in the side surface of the semiconductor chip 40 tends to become the starting point of film peeling. In the semiconductor chip 40 of the present invention, since the exposed portion does not exist, the film peeling from the exposed portion cuts the semiconductor chip manufacturing wafer 10 to produce the semiconductor chip 40, or after production It is difficult to occur because Therefore, the semiconductor chip 40 by which peeling of the 1st cured resin film r1 as a protective film was suppressed is obtained.

Further, in the step (S4), the portion formed in the groove portion among the first cured resin film r1 of the wafer 10 for semiconductor chip production on which the first cured resin film r1 is formed is cut along the division scheduled line. In this case, it is preferable that the 1st cured resin film (r1) is transparent. Since the semiconductor wafer 11 can be seen by the 1st cured resin film r1 being transparent, the visibility of the division|segmentation schedule line is ensured. Therefore, it becomes easy to cut along the division|segmentation schedule line.

<Second embodiment>

In the second embodiment, as shown in FIG. 1 , the step (S-BG) is performed after the step (S3) and before the step (S4).

6 shows a schematic diagram according to the second embodiment.

(Second embodiment: step (S3))

In the second embodiment, first, the step (S3) is performed. Specifically, as shown in Fig. 6 (2-a), the first curable resin (x1) is cured in the state in which the first laminate (α1) is affixed, and the first cured resin film (r1) is formed. The wafer 10 for semiconductor chip manufacture is obtained.

The 1st cured resin film (r1) formed by hardening|curing 1st curable resin (x1) becomes firmer than 1st curable resin (x1) at normal temperature. Therefore, the bump neck is favorably protected by forming the 1st cured resin film r1. In addition, in the step (S4), the semiconductor chip coated with the first cured resin film r1 can be obtained by dividing the wafer 10 for semiconductor chip production on which the first cured resin film r1 is formed into pieces, A semiconductor chip excellent in strength is obtained. Furthermore, peeling of the 1st cured resin film r1 as a protective film is also suppressed.

The method similar to the hardening method demonstrated in 1st Embodiment is mentioned as a hardening method.

1st curable resin temporarily generated when hardening the 1st curable resin (x1) with the 1st support sheet Y1 at the time of thermosetting by performing a thermosetting process without peeling the 1st support sheet Y1 The flow in the surface of (x1) can be suppressed, and the flatness of the 1st cured resin film r1 in a bump formation surface can be improved. Moreover, before grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture, the curvature of the wafer 10 for semiconductor chip manufacture is suppressed by hardening 1st curable resin (x1).

(Second embodiment: step (S-BG))

After performing the step (S3), the step (S-BG) is performed. As shown to (2-b) of FIG. 6, the back surface 11b of the wafer 10 for semiconductor chip manufacture is ground in the state which stuck the 1st laminated body (alpha)1.

In addition, the amount of grinding at the time of grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture should just be an amount in which the bottom part of the groove part 13 of the wafer 10 for semiconductor chip manufacture is exposed at least. Therefore, you may make it grind the 1st cured resin film r1 embedded in the groove part 13 together with the wafer 10 for semiconductor chip manufacture.

Next, as shown to (2-c) of FIG. 6, the 1st support sheet Y1 is peeled from the 1st laminated body (alpha)1.

(Second embodiment: step (S4))

After implementing the step (S-BG), the step (S4) is performed similarly to the first embodiment. Specifically, as shown in FIG. 6(2-d), the part formed in the groove part among the 1st cured resin film r1 of the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed. , cut along the line to be split.

Cutting can be performed suitably, employ|adopting conventionally well-known methods, such as blade dicing and laser dicing.

Thereby, the semiconductor chip 40 in which the bump formation surface 11a and the side surface are coat|covered with the 1st cured resin film r1 at least can be obtained.

Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are coat|covered with the 1st cured resin film r1, it has the outstanding intensity|strength. Moreover, the semiconductor chip 40 by which peeling of the 1st cured resin film r1 as a protective film was suppressed for the reason mentioned above is obtained.

<Third embodiment>

In the third embodiment, as shown in FIG. 1 , the process (S-BG) is performed after the process (S3) and before the process (S4), which is common with the second embodiment. However, it is different from the second embodiment in that the back grind sheet (b-BG) is used separately.

7 shows a schematic diagram according to the third embodiment.

(Third embodiment: step (S3))

In 3rd embodiment, although a process (S3) is performed first, as shown to (3-a) of FIG. 7, the 1st support sheet Y1 is peeled from the 1st laminated body α1 before that. . After that, the step (S3) is performed. As specifically, shown to FIG.7(3-b), 1st curable resin (x1) is hardened, and the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed is obtained.

The method similar to the hardening method demonstrated in 1st Embodiment is mentioned as a hardening method.

Since the first supporting sheet Y1 is peeled off before the step (S3), even when the first curable resin (x1) is a thermosetting resin and heat treatment for curing is performed in the step (S3), Heat resistance is not required for the first supporting sheet Y1. Accordingly, the degree of freedom in design of the first supporting sheet Y1 is improved.

Moreover, before grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture, the curvature of the wafer 10 for semiconductor chip manufacture is suppressed by hardening 1st curable resin (x1).

(Third embodiment: step (S-BG))

After performing the step (S3), the step (S-BG) is performed. Specifically, as shown in FIG. 7 (3-c), a back grind sheet ( b-BG) is attached. Then, as shown in FIG. 7(3-d), after grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture in the state which affixed the back grind sheet b-BG, FIG. 7(3) As shown to -e), the back grind sheet b-BG is peeled from the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed.

Since the back grind sheet (b-BG) is not used in the step (S3), even when the first curable resin (x1) is a thermosetting resin and heat treatment for curing is performed in the step (S3), the bag Heat resistance is not required for the grind sheet (b-BG). Accordingly, the degree of freedom in designing the back grind sheet b-BG is improved.

In addition, the amount of grinding at the time of grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture should just be an amount in which the bottom part of the groove part 13 of the wafer 10 for semiconductor chip manufacture is exposed at least. Therefore, you may make it grind the 1st cured resin film r1 embedded in the groove part 13 together with the wafer 10 for semiconductor chip manufacture.

(Third embodiment: step (S4))

After implementing the step (S-BG), the step (S4) is performed similarly to the first and second embodiments. Specifically, as shown to FIG. 7(3-f), the part formed in the groove part among the 1st cured resin film r1 of the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed. , cut along the line to be split.

Cutting can be performed suitably, employ|adopting conventionally well-known methods, such as blade dicing and laser dicing.

Thereby, the semiconductor chip 40 in which the bump formation surface 11a and the side surface are coat|covered with the 1st cured resin film r1 at least can be obtained.

Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are coat|covered with the 1st cured resin film r1, it has the outstanding intensity|strength. Moreover, the semiconductor chip 40 by which peeling of the 1st cured resin film r1 as a protective film was suppressed for the reason mentioned above is obtained.

<Fourth embodiment>

In the fourth embodiment, as shown in FIG. 1 , a step (S-BG) is performed in a step (S4).

Fig. 8 shows a schematic diagram according to the fourth embodiment.

(Fourth embodiment: step (S3))

In 4th embodiment, although a process (S3) is performed first, as shown to (4-a) of FIG. 8, the 1st support sheet Y1 is peeled from the 1st laminated body α1 before that. . After that, the step (S3) is performed. As specifically, shown to FIG.8 (4-b), 1st curable resin (x1) is hardened, and the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed is obtained.

The method similar to the hardening method demonstrated in 1st Embodiment is mentioned as a hardening method.

Since the first supporting sheet Y1 is peeled off before the step (S3), even when the first curable resin (x1) is a thermosetting resin and heat treatment for curing is performed in the step (S3), Heat resistance is not required for the first supporting sheet Y1. Accordingly, the degree of freedom in design of the first supporting sheet Y1 is improved.

Moreover, before grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture, the curvature of the wafer 10 for semiconductor chip manufacture is suppressed by hardening 1st curable resin (x1).

(Fourth embodiment: step (S4) including step (S-BG))

After performing the step (S3), as shown in (4-c) of FIG. 8 , the groove portion ( In the part formed in 13), a cut is put along the dividing line. It is preferable to make the depth of cut into the depth which reaches the deepest part of the groove part 13 from a viewpoint of making it easy to separate into pieces. Thereby, in the process (S-BG) mentioned later, the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed along the said cut is divided into pieces.

Alternatively, although not shown, in the part formed in the groove part 13 among the 1st cured resin film r1 of the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed, along a division|segmentation schedule line A modified region may be formed. The modified region can be formed by laser or plasma treatment or the like. Thereby, in the step (S-BG) to be described later, cracks are generated starting from the modified region, and the wafer 10 for semiconductor chip production in which the first cured resin film r1 is formed along the modified region is separated into pieces. do.

Next, the step (S-BG) is performed. Specifically, as shown in FIG. 8 (4-d), a back grind sheet ( b-BG) is attached. Next, as shown to Fig.8 (4-e), the back surface 11b of the wafer 10 for semiconductor chip manufacture is ground in the state which stuck the back grind sheet b-BG. Finally, as shown to Fig.8 (4-f), the back grind sheet b-BG is peeled from the wafer 10 for semiconductor chip manufacture in which the 1st cured resin film r1 was formed.

Thereby, the semiconductor chip 40 in which the bump formation surface 11a and the side surface are coat|covered with the 1st cured resin film r1 at least can be obtained.

In addition, the amount of grinding at the time of grinding the back surface 11b of the wafer 10 for semiconductor chip manufacture should just be an amount in which the bottom part of the groove part 13 of the wafer 10 for semiconductor chip manufacture is exposed at least. Therefore, you may make it grind the 1st cured resin film r1 embedded in the groove part 13 together with the wafer 10 for semiconductor chip manufacture.

Since the bump formation surface 11a and the side surface of the semiconductor chip 40 are coat|covered with the 1st cured resin film r1, it has the outstanding intensity|strength.

In addition, since the back grind sheet (b-BG) is not used in the step (S3), even when the first curable resin (x1) is a thermosetting resin and heat treatment for curing is performed in the step (S3) , heat resistance is not required for the back grind sheet (b-BG). Accordingly, the degree of freedom in designing the back grind sheet b-BG is improved.

Here, in the first to fourth embodiments, in the step (S-BG), the first support sheet (Y1) or the back grind sheet (b-BG) was described and described, but the present invention In one aspect, you may make it provide the resin layer Z1 for back grinding instead of the 1st support sheet Y1 or the back grind sheet (b-BG).

Specifically, after coating the surface of the first cured resin film r1 using the fluid resin (z1) and also covering the bumps exposed from the first cured resin film r1, the resin By hardening (z1) and forming the resin layer (Z1) for back grinding, it can also substitute for a back grind sheet, and can also implement a grinding process.

Further, when the surface of the first cured resin film (r1) and the bumps exposed from the first cured resin film (r1) are covered with the resin (z1), a resin film (z2) having flexibility to follow the unevenness of the bumps By coat|covering through this, it can make it easy to peel the resin layer (Z1) for back grinding which became unnecessary after a process (S-BG).

[Process (T)]

In one aspect of the method for manufacturing a semiconductor chip of the present invention, it is preferable to further include the following step (T).

- Process (T): Process of forming a 2nd cured resin film (r2) on the said back surface of the said wafer for semiconductor chip manufacture

According to the manufacturing method which concerns on the said embodiment, the semiconductor chip 40 in which the bump formation surface 11a and the side surface are coat|covered with the 1st cured resin film r1 at least can be obtained. However, the back surface of the semiconductor chip 40 is exposed. Then, it is preferable to implement the said process (T) from a viewpoint of protecting the back surface of the semiconductor chip 40 and improving the intensity|strength of the semiconductor chip 40 more.

More specifically, it is preferable that the said process (T) includes the following process (T1) - the following process (T2) in this order.

- Process (T1): The process of affixing 2nd curable resin (x2) to the back surface of the wafer for semiconductor chip manufacture

· Step (T2): A step of curing the second curable resin (x2) to form the second curable resin film (r2)

Moreover, in the process (T1), it is preferable to use the 2nd laminated body (alpha)2 which has a laminated structure in which the layer (X2) of the 2nd support sheet (Y2) and the 2nd curable resin (x2) was laminated|stacked. Specifically, the step (T1) is a second laminate having a laminate structure in which a layer (X2) of a second support sheet (Y2) and a second curable resin (x2) is laminated on the back surface of a wafer for semiconductor chip production ( It is preferable to set α2) as a step of affixing the layer (X2) as a affixing surface.

In this case, the timing of peeling the 2nd support sheet Y2 from the 2nd laminated body alpha 2 may be between a process (T1) and a process (T2), and may be after the process (T2).

Here, when the second laminate (α2) is used in the step (T1), the second support sheet (Y2) included in the second laminate (α2) supports the second curable resin (x2). , it is preferable to have a function as a dicing sheet.

In the case of the manufacturing method according to the first to third embodiments, in the step (S4), the second laminate α2 is formed on the back surface 11b of the semiconductor wafer 10 on which the first cured resin film r1 is formed. By sticking to , when performing into pieces by dicing, the 2nd support sheet Y2 functions as a dicing sheet, and it can be made easy to perform dicing.

Here, as in the manufacturing method according to the first embodiment, when the step (S3) is performed after the step (S-BG), the step (T1) is performed before the step (S3) is performed, and then, You may make it implement a process (S3) and a process (T2) simultaneously. That is, you may make it harden|cure simultaneously 1st curable resin (x1) and 2nd curable resin (x2) collectively. Thereby, the number of times of hardening processing can be reduced.

Specifically, in the manufacturing method according to the first to third embodiments, the step (T) includes the following step (T1-1) and the following step (T1-2) in this order,

- Process (T1-1): After process (S-BG) and before process (S4), it is a process of affixing 2nd curable resin (x2) to the back surface of the wafer for semiconductor chip manufacture.

- Step (T1-2): Step of curing the second curable resin (x2) before or after the step (S4) to form the second cured resin film (r2)

In the step (S4), when the portion formed in the groove portion among the first cured resin film r1 of the wafer for semiconductor chip production on which the first cured resin film r1 is formed is cut along the division scheduled line, the second It is preferable to also cut|disconnect curable resin (x2) or 2nd cured resin film (r2) collectively.

Further, in the manufacturing method according to the fourth embodiment, the step (T) includes the following step (T2-1) and the following step (T2-2) in this order,

· Step (T2-1): After the step (S-BG) and after the step (S4), with the back grind sheet (b-BG) affixed, on the back surface of the wafer for semiconductor chip production, 2 Step of pasting curable resin (x2)

- Step (T2-2): Step of curing the second curable resin (x2) to form the second cured resin film (r2)

In addition, it is preferable that the process (T) includes the following process (T2-3) before or after the process (T2-2).

Step (T2-3): A step of dividing the second curable resin layer (x2) or the second cured resin film (r2) along the cuff

[Process (U)]

In one aspect of the method for manufacturing a semiconductor chip of the present invention, the following step (U) may be further included.

Step (U): removing the first cured resin film r1 covering the top of the bump or the first cured resin film r1 adhering to a part of the top of the bump, exposing process

As an exposure process for exposing the top part of a bump, etching processes, such as a wet etching process and a dry etching process, are mentioned, for example.

Here, as a dry etching process, plasma etching process etc. are mentioned, for example.

In addition, in the case where the top of the bump is not exposed on the surface of the protective film, the exposure treatment may be performed for the purpose of retreating the protective film until the top of the bump is exposed.

About the timing of implementing a process (U), if the 1st cured resin film r1 is in an exposed state, it will not specifically limit, It is after a process (S3) and before a process (S4), The 1st support sheet It is preferable that (Y1) and the back grind sheet (b-BG) are in a state not affixed.

Next, the 1st laminated body (alpha) 1 used in the manufacturing method of the semiconductor chip of one aspect of this invention is demonstrated. Moreover, the back grind sheet (b-BG) and 2nd laminated body (alpha)2 used in the manufacturing method of the semiconductor chip of one aspect of this invention are also demonstrated.

[Configuration of the first laminate (α1)]

The structural example of the 1st laminated body (alpha) 1 used for the manufacturing method of one aspect of this invention is shown in FIG.

The first laminate (α1) used in the manufacturing method of one embodiment of the present invention is a first curable resin on one surface of the first support sheet (Y1) like the first laminate (α1) shown in FIG. 9 . A layer (X1) of (x1) is provided. The layer (X1) of the first curable resin (x1) is provided on one side of the first support sheet (Y1), so that the layer (X1) of the first curable resin (x1) is transported as a product package, or in the process When conveying the layer (X1) of 1st curable resin (x1), the layer (X1) of 1st curable resin (x1) is supported and protected stably.

Moreover, the specific structural example of the 1st laminated body (alpha)1 is shown to FIGS.

As for the 1st laminated body α1, like the 1st laminated body α1a shown in FIG. 10, the 1st support sheet Y1 is the base material 51, The 1st curable resin on one surface of the base material 51 A layer (X1) of (x1) is provided.

In addition, the first laminate (α1) is a pressure-sensitive adhesive sheet in which a base material (51) and an adhesive layer (61) are laminated, as in the first laminate (α1b) shown in FIG. The adhesive layer 61 of the said adhesive sheet, and the layer (X1) of 1st curable resin (x1) may be bonded together.

Further, in the first laminate α1, like the first laminate α1c shown in Fig. 12, the first support sheet Y1 is formed by connecting the base material 51, the intermediate layer 71, and the pressure-sensitive adhesive layer 61 to each other. It is the adhesive sheet laminated|stacked in order, and the adhesive layer 61 of the said adhesive sheet, and the layer (X1) of 1st curable resin (x1) may be bonded together. The adhesive sheet which laminated|stacked the base material 51, the intermediate|middle layer 71, and the adhesive layer 61 in this order can be used suitably as a back grind tape. That is, since the 1st laminated body α1c shown in FIG. 12 has a back grind tape as the 1st support sheet Y1, the 1st layer of curable resin (x1) of the 1st laminated body α1c (X1) After bonding together the bump formation surface of the wafer for semiconductor chip manufacture, when grinding and thinning the back surface of the wafer for semiconductor chip manufacture, it can use suitably.

Hereinafter, the 1st curable resin (x1) used for the 1st laminated body (alpha)1, and the 1st support sheet Y1 are demonstrated.

<First curable resin (x1)>

The 1st curable resin (x1) is a film-form resin used in order to coat the bump formation surface of the wafer for semiconductor chip manufacture, and to fill the groove part formed in the wafer for semiconductor chip manufacture, It is heat or energy-beam irradiation. By hardening, the 1st cured resin film r1 is formed. That is, the first curable resin (x1) may be a thermosetting resin film cured by heating (hereinafter also referred to as “first thermosetting resin film (x1-1)”), and energy cured by energy ray irradiation A ray-curable resin film (hereinafter also referred to as “first energy ray-curable resin film (x1-2)”) may be used.

The physical property of 1st curable resin (x1) can be adjusted by adjusting any one or both of the kind and quantity of the containing component of 1st curable resin (x1).

Hereinafter, a 1st thermosetting resin film (x1-1) and a 1st energy-beam curable resin film (x1-2) are demonstrated.

<< 1st thermosetting resin film (x1-1)>>

The 1st thermosetting resin film (x1-1) contains a polymer component (A) and a thermosetting component (B).

The 1st thermosetting resin film (x1-1) is formed from the 1st thermosetting resin composition (x1-1-1) containing a polymer component (A) and a thermosetting component (B), for example.

The polymer component (A) is a component that can be regarded as formed by a polymerization reaction of a polymerizable compound. Moreover, a thermosetting component (B) is a component which can make hardening (polymerization) reaction by making heat|fever as a trigger of reaction. In addition, a polycondensation reaction is also included in the said hardening (polymerization) reaction.

In addition, in the following description of this specification, "content of each component in the total amount of the active ingredient of the 1st thermosetting resin composition (x1-1-1)", "1st thermosetting resin composition (x1- Content of each component of 1st thermosetting resin film (x1-1) formed by 1-1)" has the same meaning.

(Polymer component (A))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) contain a polymer component (A).

A polymer component (A) is a polymer compound for providing film-forming property, flexibility, etc. to the 1st thermosetting resin film (x1-1). A polymer component (A) may be used individually by 1 type, and may be used in combination of 2 or more type. When using a polymer component (A) in combination of 2 or more types, those combination and ratio can be selected arbitrarily.

As the polymer component (A), for example, acrylic resin (resin having a (meth)acryloyl group), polyvinyl acetal, polyester, urethane resin (resin having a urethane bond), acrylic urethane resin, silicone resin (siloxane) resin having a bond), a rubber-based resin (resin having a rubber structure), a phenoxy resin, and a thermosetting polyimide.

Among these, acrylic resin and polyvinyl acetal are preferable.

As acrylic resin, a well-known acrylic polymer is mentioned.

The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 300,000 to 1,500,000, still more preferably 500,000 to 1,000,000, from the viewpoint of making it easier to exhibit the effect of the present invention.

When the weight average molecular weight of acrylic resin is more than the said lower limit, it is easy to improve the shape stability (stability with time at the time of storage) of 1st thermosetting resin film (x1-1). Moreover, when the weight average molecular weight of an acrylic resin is below the said upper limit, it becomes easy to follow the 1st thermosetting resin film (x1-1) to the uneven|corrugated surface of a to-be-adhered body, For example, to-be-adhered body and 1st thermosetting resin. It is easy to suppress generation|occurrence|production of a void etc. between films (x1-1). Therefore, it is easy to improve not only the covering property of the bump formation surface 11a of the semiconductor wafer 11 but also the embedding|flush-mounting property with respect to the groove part 13. As shown in FIG.

The glass transition temperature (Tg) of the acrylic resin is preferably -60 to 70°C, more preferably -40 to 50°C, and -30°C to 30°C from the viewpoint of making it easier to exhibit the effect of the present invention. It is more preferable that it is ℃.

When the glass transition temperature (Tg) of the acrylic resin is equal to or higher than the lower limit, the adhesive force between the first cured resin film r1 and the first support sheet Y1 is suppressed, and the peelability of the first support sheet Y1 is improved. . Moreover, when the glass transition temperature (Tg) of acrylic resin is below the said upper limit, the adhesive force with the to-be-adhered body of a 1st thermosetting resin film (x1-1) and a 1st cured resin film (r1) improves. Therefore, it can make it easier to suppress film|membrane peeling of the 1st cured resin film r1 as a protective film more easily.

As acrylic resin, For example, the polymer of 1 type or 2 or more types of (meth)acrylic acid ester; (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, a copolymer of 2 or more types of monomers selected from N-methylolacrylamide, etc. are mentioned.

As the (meth)acrylic acid ester constituting the acrylic resin, for example, (meth)methyl acrylate, (meth)ethyl acrylate, (meth)acrylic acid n-propyl, (meth)acrylic acid isopropyl, (meth)acrylic acid n- Butyl, (meth) acrylate isobutyl, (meth) acrylate sec-butyl, (meth) acrylate tert-butyl, (meth) acrylate pentyl, (meth) acrylate hexyl, (meth) acrylate heptyl, (meth) acrylate 2-ethyl Hexyl, (meth)acrylic acid isooctyl, (meth)acrylic acid n-octyl, (meth)acrylic acid n-nonyl, (meth)acrylic acid isononyl, (meth)acrylic acid decyl, (meth)acrylic acid undecyl, (meth)acrylic acid Dodecyl ((meth)acrylic acid lauryl), (meth)acrylic acid tridecyl, (meth)acrylic acid tetradecyl ((meth)acrylic acid myristyl), (meth)acrylic acid pentadecyl, (meth)acrylic acid hexadecyl ((meth) The alkyl group constituting the alkyl ester, such as palmityl acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (stearyl (meth)acrylate), has a chain structure having 1 to 18 carbon atoms (meth) ) Acrylic acid alkyl ester;

(meth)acrylic acid cycloalkyl esters, such as (meth)acrylic-acid isobornyl and (meth)acrylic-acid dicyclopentanyl;

(meth)acrylic acid aralkyl esters, such as (meth)acrylic-acid benzyl;

(meth)acrylic acid cycloalkenyl esters, such as (meth)acrylic acid dicyclopentenyl ester;

(meth)acrylic acid cycloalkenyloxyalkyl esters such as (meth)acrylic acid dicyclopentenyloxyethyl ester;

(meth)acrylic acid imide;

glycidyl group-containing (meth)acrylic acid esters such as (meth)acrylic acid glycidyl;

(meth) acrylic acid hydroxymethyl, (meth) acrylic acid 2-hydroxyethyl, (meth) acrylic acid 2-hydroxypropyl, (meth) acrylic acid 3-hydroxypropyl, (meth) acrylic acid 2-hydroxybutyl, (meth) ) hydroxyl group-containing (meth)acrylic acid esters such as 3-hydroxybutyl acrylic acid and 4-hydroxybutyl (meth)acrylic acid;

Substituted amino group containing (meth)acrylic acid ester, such as (meth)acrylic-acid N-methylaminoethyl, etc. are mentioned.

As used herein, the term "substituted amino group" means a group in which one or two hydrogen atoms of an amino group are substituted with groups other than hydrogen atoms.

Among these, (meth)acrylic acid alkyl esters and glycidyl group-containing (meth)acrylic acid esters, wherein the alkyl group constituting the alkyl ester has a chain structure having 1 to 18 carbon atoms, from the viewpoint of making it easier to exhibit the effects of the present invention. It is preferable that it is a copolymer combining , and a hydroxyl group-containing (meth)acrylic acid ester, and the alkyl group constituting the alkyl ester has a C1-C4 chain structure (meth)acrylic acid alkyl ester, glycidyl group-containing (meth) It is more preferable that it is a copolymer obtained by combining an acrylic acid ester and a hydroxyl group-containing (meth)acrylic acid ester, and more preferably a copolymer obtained by combining butyl acrylate, methyl acrylate, glycidyl acrylate, and 2-hydroxyethyl acrylate.

The acrylic resin is, for example, in addition to (meth)acrylic acid ester, (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, and one or more monomers selected from styrene and N-methylolacrylamide are copolymerized it may be

Single 1 type may be sufficient as the monomer which comprises acrylic resin, and 2 or more types may be sufficient as it. When there are two or more types of monomers constituting the acrylic resin, combinations and ratios thereof can be arbitrarily selected.

Acrylic resin may have a functional group which can couple|bond with other compounds, such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group.

The said functional group of acrylic resin may couple|bond with another compound through the crosslinking agent (F) mentioned later, and may couple|bond with another compound directly without passing through a crosslinking agent (F). When the acrylic resin is bonded to another compound by the functional group, the reliability of the package obtained by using the first thermosetting resin film (x1-1) tends to improve.

As said polyvinyl acetal in a polymer component (A), a well-known thing is mentioned.

Especially, as a preferable polyvinyl acetal, polyvinyl formal, polyvinyl butyral, etc. are mentioned, for example, Polyvinyl butyral is more preferable.

Examples of polyvinyl butyral include those having structural units represented by the following formulas (i)-1, (i)-2 and (i)-3.

[Formula 1]

(Wherein, l, m, and n are each independently an integer of 1 or more.)

It is preferable that it is 5,000-200,000, and, as for the weight average molecular weight (Mw) of polyvinyl acetal, it is more preferable that it is 8,000-100,000. When the weight average molecular weight of polyvinyl acetal is more than the said lower limit, it is easy to improve the shape stability (time-dependent stability at the time of storage) of the 1st thermosetting resin film (x1-1). Moreover, when the weight average molecular weight of polyvinyl acetal is below the said upper limit, it becomes easy to follow the 1st thermosetting resin film (x1-1) to the uneven|corrugated surface of a to-be-adhered body, For example, to-be-adhered body and 1st thermosetting property. It is easy to suppress generation|occurrence|production of a void etc. between resin films (x1-1). Therefore, it is easy to improve not only the covering property of the bump formation surface 11a of the semiconductor wafer 11 but also the embedding|flush-mounting property with respect to the groove part 13. As shown in FIG.

It is preferable that it is 40-80 degreeC, and, as for the glass transition temperature (Tg) of polyvinyl acetal, it is more preferable that it is 50-70 degreeC. When Tg of polyvinyl acetal is more than the said lower limit, the adhesive force of the 1st cured resin film r1 and the 1st support sheet Y1 is suppressed, and the peelability of the 1st support sheet Y1 improves. Moreover, when Tg of polyvinyl acetal is below the said upper limit, the adhesive force with the to-be-adhered body of 1st thermosetting resin film (x1-1) and 1st cured resin film (r1) improves. Therefore, it can make it easier to suppress film|membrane peeling of the 1st cured resin film r1 as a protective film more easily.

The ratio of three or more types of monomers constituting polyvinyl acetal can be arbitrarily selected.

Here, in one aspect of the present invention, as the polymer component (A), a thermoplastic resin other than an acrylic resin and polyvinyl acetal (hereinafter, it may be simply abbreviated as "thermoplastic resin"), an acrylic resin and polyvinyl You may use independently, without using both of acetal, and you may use together with one or both of acrylic resin and polyvinyl acetal.

By using a thermoplastic resin, the peelability of the 1st cured resin film r1 from the 1st support sheet Y1 improves, or the 1st thermosetting resin film (x1-1) follows the uneven|corrugated surface of a to-be-adhered body. It becomes easy to carry out, and generation|occurrence|production of a void etc. between a to-be-adhered body and 1st thermosetting resin film (x1-1) may be suppressed more. Therefore, it is easy to improve not only the covering property of the bump formation surface 11a of the semiconductor wafer 11 but also the embedding|flush-mounting property with respect to the groove part 13. As shown in FIG.

It is preferable that it is 1,000-100,000, and, as for the weight average molecular weight of a thermoplastic resin, it is more preferable that it is 3,000-80,000.

It is preferable that it is -30-150 degreeC, and, as for the glass transition temperature (Tg) of the said thermoplastic resin, it is more preferable that it is -20-120 degreeC.

Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.

A thermoplastic resin may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of thermoplastic resins are used, their combination and ratio can be arbitrarily selected.

The content of the polymer component (A) is preferably 5-85 mass%, more preferably 5-80 mass%, based on the total amount of the active ingredient of the first thermosetting resin composition (x1-1-1). do.

A polymer component (A) may correspond also to a thermosetting component (B). In this invention, when a 1st thermosetting resin composition (x1-1-1) contains the component corresponding to both such a polymer component (A) and a thermosetting component (B), 1st thermosetting resin composition (x1-1-1) is considered to contain both a polymer component (A) and a thermosetting component (B).

(thermosetting component (B))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) contain a thermosetting component (B).

The thermosetting component (B) is a component for curing the first thermosetting resin film (x1-1) to form a hard first cured resin film (r1).

A thermosetting component (B) may be used individually by 1 type, and may be used in combination of 2 or more type. When the thermosetting component (B) is two or more types, their combination and ratio can be arbitrarily selected.

As a thermosetting component (B), an epoxy type thermosetting resin, a thermosetting polyimide, a polyurethane, unsaturated polyester, a silicone resin, etc. are mentioned, for example. Among these, an epoxy-type thermosetting resin is preferable.

An epoxy-type thermosetting resin consists of an epoxy resin (B1) and a thermosetting agent (B2).

Epoxy thermosetting resin may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of epoxy thermosetting resins are used, their combination and ratio can be arbitrarily selected.

・Epoxy resin (B1)

As an epoxy resin (B1), a well-known thing is mentioned, For example, polyfunctional type epoxy resin, a biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated substance, orthocresol novolak epoxy resin, dicyclopenta A diene-type epoxy resin, a biphenyl-type epoxy resin, a bisphenol A-type epoxy resin, a bisphenol F-type epoxy resin, a phenylene skeleton-type epoxy resin, etc., and a bifunctional or more than functional epoxy compound are mentioned.

Among these, it is preferable to use a polyfunctional type epoxy resin, a dicyclopentadiene type epoxy resin, and a bisphenol F type epoxy resin from a viewpoint of making it easier to exhibit the effect of this invention. Moreover, polyfunctional-type aromatic epoxy resin is preferable among polyfunctional-type epoxy resins.

As the epoxy resin (B1), an epoxy resin having an unsaturated hydrocarbon group may be used. The epoxy resin which has an unsaturated hydrocarbon group has higher compatibility with an acrylic resin than the epoxy resin which does not have an unsaturated hydrocarbon group. Therefore, the reliability of the package obtained using the 1st thermosetting resin film (x1-1) improves by using the epoxy resin which has an unsaturated hydrocarbon group.

As an epoxy resin which has an unsaturated hydrocarbon group, the compound formed by conversion into the group which has an unsaturated hydrocarbon group in part of the epoxy group of a polyfunctional epoxy resin is mentioned, for example. Such a compound is obtained, for example by making an epoxy group addition-react (meth)acrylic acid or its derivative(s). Moreover, as an epoxy resin which has an unsaturated hydrocarbon group, the compound etc. which the group which has an unsaturated hydrocarbon group directly couple|bonded with the aromatic ring etc. which comprise an epoxy resin are mentioned, for example.

The unsaturated hydrocarbon group is an unsaturated group having polymerizability, and specific examples thereof include an ethenyl group (vinyl group), 2-propenyl group (allyl group), (meth)acryloyl group, and (meth)acrylamide group. can Among these, an acryloyl group is preferable.

Although the number average molecular weight of the epoxy resin (B1) is not particularly limited, from the viewpoint of the curability of the first thermosetting resin film (x1-1) and the strength and heat resistance of the first cured resin film (r1) after curing, 300 It is preferable that it is -30,000, It is more preferable that it is 400-10,000, It is more preferable that it is 500-3,000.

It is preferable that it is 100-1,000 g/eq, and, as for the epoxy equivalent of an epoxy resin (B1), it is more preferable that it is 300-800 g/eq.

An epoxy resin (B1) may be used individually by 1 type, and may be used in combination of 2 or more type. When using together an epoxy resin (B1) by 2 or more types, those combinations and a ratio can be selected arbitrarily.

· Thermal curing agent (B2)

The thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).

As a thermosetting agent (B2), the compound which has two or more functional groups which can react with an epoxy group in 1 molecule is mentioned, for example. The functional group includes, for example, a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and a group in which an acid group is anhydrized, and a phenolic hydroxyl group, an amino group, or a group in which an acid group is anhydrideized is preferable, It is more preferable that it is a phenolic hydroxyl group or an amino group.

Among the thermosetting agents (B2), examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolak phenol resins, dicyclopentadiene phenol resins, and aralkylphenol resins. can be heard

Among the thermosetting agents (B2), examples of the amine-based curing agent having an amino group include dicyandiamide (hereinafter, sometimes abbreviated as “DICY”).

Among these, the phenolic hardening|curing agent which has a phenolic hydroxyl group from a viewpoint of making it easier to exhibit the effect of this invention more is preferable, and it is more preferable that it is a novolak-type phenol resin.

The thermosetting agent (B2) may have an unsaturated hydrocarbon group.

As the thermosetting agent (B2) having an unsaturated hydrocarbon group, for example, a compound in which a part of the hydroxyl group of the phenol resin is substituted with a group having an unsaturated hydrocarbon group, or a group having an unsaturated hydrocarbon group is directly bonded to the aromatic ring of the phenol resin The compound which consists of, etc. are mentioned. The said unsaturated hydrocarbon group in a thermosetting agent (B2) is the same thing as the unsaturated hydrocarbon group in the epoxy resin which has the above-mentioned unsaturated hydrocarbon group.

When a phenolic curing agent is used as the thermal curing agent (B2), the thermal curing agent (B2) has a softening point from the viewpoint of easily improving the releasability of the first cured resin film (r1) from the first supporting sheet (Y1). Or it is preferable that a glass transition temperature is high.

Among the thermosetting agents (B2), for example, the number average molecular weight of a resin component such as a polyfunctional phenol resin, a novolak-type phenol resin, a dicyclopentadiene-based phenol resin, and an aralkylphenol resin is 300 to 30,000. It is preferable, it is more preferable that it is 400-10,000, It is more preferable that it is 500-3,000.

Although the molecular weight of non-resin components, such as a biphenol and dicyandiamide, is not specifically limited among thermosetting agents (B2), For example, it is preferable that it is 60-500.

A thermosetting agent (B2) may be used individually by 1 type, and may be used in combination of 2 or more type. When the thermosetting agent (B2) is two or more types, their combination and ratio can be arbitrarily selected.

1st thermosetting resin composition (x1-1-1) WHEREIN: It is preferable that content of thermosetting agent (B2) is 0.1-500 mass parts with respect to content 100 mass parts of epoxy resin (B1), 1-200 It is more preferable that it is a mass part. When content of a thermosetting agent (B2) is more than the said lower limit, hardening of a 1st thermosetting resin film (x1-1) advances more easily. Moreover, when content of a thermosetting agent (B2) is below the said upper limit, the moisture absorption of the 1st thermosetting resin film (x1-1) is reduced, and the package obtained using the 1st thermosetting resin film (x1-1) reliability is further improved.

In the first thermosetting resin composition (x1-1-1), the content of the thermosetting component (B) (the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is 100 of the content of the polymer component (A) It is preferable that it is 50-1000 mass parts with respect to a mass part, It is more preferable that it is 100-900 mass parts, It is still more preferable that it is 150-800 mass parts. When content of a thermosetting component (B) is such a range, the adhesive force of the 1st cured resin film r1 and the 1st support sheet Y1 is suppressed, and the peelability of the 1st support sheet Y1 improves. .

(curing accelerator (C))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the hardening accelerator (C).

The curing accelerator (C) is a component for adjusting the curing rate of the first thermosetting resin composition (x1-1-1).

As a preferable hardening accelerator (C), For example, tertiary amines, such as triethylenediamine, benzyl dimethylamine, a triethanolamine, dimethylamino ethanol, and tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5 imidazoles such as -hydroxymethylimidazole (imidazole in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms); organic phosphines such as tributylphosphine, diphenylphosphine and triphenylphosphine (phosphine in which at least one hydrogen atom is substituted with an organic group); Tetraphenyl boron salts, such as a tetraphenyl phosphonium tetraphenyl borate and a triphenyl phosphine tetraphenyl borate, etc. are mentioned.

Among these, from a viewpoint of making it easier to exhibit the effect of this invention, imidazole is preferable and 2-phenyl-4,5- dihydroxymethyl imidazole is more preferable.

A hardening accelerator (C) may be used individually by 1 type, and may be used in combination of 2 or more type. When the curing accelerator (C) is two or more types, combinations and ratios thereof can be arbitrarily selected.

In the first thermosetting resin composition (x1-1-1), the content of the curing accelerator (C) in the case of using the curing accelerator (C) is 0.01 with respect to 100 parts by mass of the content of the thermosetting component (B). It is preferable that it is -10 mass parts, and it is more preferable that it is 0.1-5 mass parts. When content of a hardening accelerator (C) is more than the said lower limit, the effect by using a hardening accelerator (C) is easy to be acquired more notably. In addition, since the content of the curing accelerator (C) is below the upper limit, for example, the high polar curing accelerator (C) is to be avoided in the first thermosetting resin film (x1-1) under high temperature and high humidity conditions. The effect of suppressing segregation by moving to the adhesive interface side with a complex becomes high, and the reliability of the package obtained using the 1st thermosetting resin film (x1-1) improves more.

(Filling material (D))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the filler (D).

By containing the filler (D), it becomes easy to adjust the coefficient of thermal expansion of the first cured resin film (r1) obtained by curing the first thermosetting resin film (x1-1) to an appropriate range, and the first thermosetting resin film ( The reliability of the package obtained by using x1-1) is further improved. Moreover, when the 1st thermosetting resin film (x1-1) contains the filler (D), the moisture absorption of the 1st cured resin film r1 can be reduced, or heat dissipation can also be improved.

Although any of an organic filler and an inorganic filler may be sufficient as a filler (D), it is preferable that it is an inorganic filler. As a preferable inorganic filler, For example, powders, such as a silica, alumina, a talc, a calcium carbonate, a titanium white, bengala, a silicon carbide, and boron nitride; beads obtained by spheroidizing these inorganic fillers; Surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; Glass fiber etc. are mentioned. Among these, it is preferable that an inorganic filler is a silica or an alumina from a viewpoint of making it easier to exhibit the effect of this invention more.

A filler (D) may be used individually by 1 type, and may be used in combination of 2 or more type.

When the filler (D) is two or more types, their combination and ratio can be arbitrarily selected.

The content of the filler (D) in the case of using the filler (D) is preferably 5-80 mass% based on the total amount of the active ingredient of the first thermosetting resin composition (x1-1-1), 7 It is more preferable that it is -60 mass %. When content of a filler (D) is such a range, adjustment of the said thermal expansion coefficient becomes easier.

It is preferable that they are 5 nm - 1000 nm, as for the average particle diameter of a filler (D), it is more preferable that they are 5 nm - 500 nm, It is still more preferable that they are 10 nm - 300 nm. The said average particle diameter measures the outer diameter in one particle|grain at several points, and calculates|requires the average value.

(Coupling agent (E))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the coupling agent (E).

As the coupling agent (E), by using one having a functional group capable of reacting with an inorganic compound or an organic compound, the adhesiveness of the first thermosetting resin film (x1-1) and the first cured resin film (r1) to an adherend and It is easy to improve adhesiveness. Therefore, it can make it easier to suppress film|membrane peeling of the 1st cured resin film r1 as a protective film more easily. Moreover, by using a coupling agent (E), the 1st cured resin film (r1) obtained by hardening|curing a 1st thermosetting resin film (x1-1) does not impair heat resistance, and water resistance improves easily.

It is preferable that it is a compound which has a functional group which can react with the functional group which a polymer component (A), a thermosetting component (B), etc. have, and, as for a coupling agent (E), it is more preferable that it is a silane coupling agent. Preferred silane coupling agents include, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxypropyltriethoxysilane Cydyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-( 2-aminoethylamino)propyltrimethoxysilane, 3-(2-aminoethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3 -Ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltri ethoxysilane, vinyl trimethoxysilane, vinyl triacetoxysilane, imidazole silane, etc. are mentioned.

A coupling agent (E) may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of coupling agents (E) are used, their combination and ratio can be arbitrarily selected.

In the first thermosetting resin composition (x1-1-1), the content of the coupling agent (E) in the case of using the coupling agent (E) is the total content of the polymer component (A) and the thermosetting component (B). It is preferable that it is 0.03-20 mass parts with respect to 100 mass parts, It is more preferable that it is 0.05-10 mass parts, It is still more preferable that it is 0.1-5 mass parts. When the content of the coupling agent (E) is equal to or more than the lower limit, the dispersibility of the filler (D) to the resin and the improvement of the adhesiveness with the adherend of the first thermosetting resin film (x1-1), such as the coupling agent ( The effect by using E) is acquired more notably. Moreover, generation|occurrence|production of an outgas is suppressed more because content of a coupling agent (E) is below the said upper limit.

(crosslinking agent (F))

As the polymer component (A), when using a polymer component (A) having a functional group such as a vinyl group, (meth)acryloyl group, amino group, hydroxyl group, carboxy group, or isocyanate group capable of bonding with other compounds, such as the above-mentioned acrylic resin, 1 The thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the crosslinking agent (F) for bonding the said functional group with another compound and bridge|crosslinking.

By crosslinking using a crosslinking agent (F), the initial adhesive force and cohesive force of the 1st thermosetting resin film (x1-1) can be adjusted.

Examples of the crosslinking agent (F) include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), and aziridine crosslinking agents (crosslinking agents having an aziridinyl group). .

As an organic polyhydric isocyanate compound, For example, an aromatic polyhydric isocyanate compound, an aliphatic polyvalent isocyanate compound, and an alicyclic polyvalent isocyanate compound (Hereinafter, these compounds may be abbreviated as "aromatic polyvalent isocyanate compound etc." together); a trimer, an isocyanurate body, and an adduct body, such as the said aromatic polyhydric isocyanate compound; The terminal isocyanate urethane prepolymer etc. which are obtained by making the said aromatic polyhydric isocyanate compound etc. react with a polyol compound are mentioned. The "adduct body" is the aromatic polyhydric isocyanate compound, aliphatic polyvalent isocyanate compound, or alicyclic polyvalent isocyanate compound, and low molecular weight active hydrogen-containing compounds such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. It means a reactant, and examples thereof include an adduct of xylylene diisocyanate of trimethylolpropane, and the like.

As an organic polyhydric isocyanate compound, More specifically, For example, 2, 4- tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; a compound in which any one or two or more of tolylene diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate were added to all or a part of hydroxyl groups of polyols such as trimethylolpropane; Lysine diisocyanate etc. are mentioned.

Examples of the organic polyvalent imine compound include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate. , tetramethylolmethane-tri-β-aziridinylpropionate, and N,N'-toluene-2,4-bis(1-aziridinecarboxamide)triethylenemelamine.

When using an organic polyvalent isocyanate compound as a crosslinking agent (F), as a polymer component (A), it is preferable to use a hydroxyl-containing polymer. When the crosslinking agent (F) has an isocyanate group and the polymer component (A) has a hydroxyl group, the crosslinking structure is formed in the first thermosetting resin film (x1-1) by reaction of the crosslinking agent (F) with the polymer component (A). can be easily introduced.

A crosslinking agent (F) may be used individually by 1 type, and may be used in combination of 2 or more type. When the crosslinking agent (F) is two or more types, their combination and ratio can be arbitrarily selected.

In the first thermosetting resin composition (x1-1-1), the content of the crosslinking agent (F) in the case of using the crosslinking agent (F) is 0.01 to 20 mass parts with respect to 100 mass parts of content of the polymer component (A). It is preferable that it is negative, It is more preferable that it is 0.1-10 mass parts, It is still more preferable that it is 0.5-5 mass parts. When the said content of a crosslinking agent (F) is more than the said lower limit, the effect by using a crosslinking agent (F) is acquired more notably. Moreover, excessive use of a crosslinking agent (F) is suppressed because the said content of a crosslinking agent (F) is below the said upper limit.

(Energy-ray-curable resin (G))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the energy-beam curable resin (G).

When the 1st thermosetting resin film (x1-1) contains energy-beam curable resin (G), a characteristic can be changed by irradiation of an energy-beam.

Energy-beam curable resin (G) is obtained by superposing|polymerizing (hardening) an energy-beam curable compound. As an energy-beam-curable compound, the compound which has at least 1 polymerizable double bond in a molecule|numerator is mentioned, for example, The acrylate type compound which has a (meth)acryloyl group is preferable.

Examples of the acrylate-based compound include trimethylolpropane tri(meth)acrylate, tetramethylolmethanetetra(meth)acrylate, pentaerythritol tri(meth)acrylate, and pentaerythritol tetra(meth)acryl. Rate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) ) chain aliphatic skeleton-containing (meth)acrylates such as acrylates; Cyclic aliphatic skeleton containing (meth)acrylates, such as dicyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylate; Urethane (meth)acrylate oligomer; epoxy-modified (meth)acrylate; Polyether (meth)acrylates other than the said polyalkylene glycol (meth)acrylate; Itaconic acid oligomer etc. are mentioned.

It is preferable that it is 100-30,000, and, as for the weight average molecular weight of an energy-beam sclerosing|hardenable compound, it is more preferable that it is 300-10,000.

The energy-beam sclerosing|hardenable compound used for superposition|polymerization may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of energy ray-curable compounds used for polymerization are used, combinations and ratios thereof can be arbitrarily selected.

Content of energy-beam-curable resin (G) in the case of using energy-beam curable resin (G) is 1-95 mass % on the basis of the whole quantity of the active ingredient of 1st thermosetting resin composition (x1-1-1) It is preferable that it is 5-90 mass %, It is more preferable that it is 10-85 mass %, and it is still more preferable.

(Photoinitiator (H))

When the first thermosetting resin film (x1-1) and the first thermosetting resin composition (x1-1-1) contain the energy ray curable resin (G), the polymerization reaction of the energy ray curable resin (G) is In order to advance efficiently, the 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the photoinitiator (H).

As a photoinitiator (H), For example, benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid Methyl, benzoin dimethyl ketal, 2,4-diethyl thioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, di Benzyl, diacetyl, 1,2-diphenylmethane, 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone, 2,4,6-trimethylbenzoyldiphenylphosphine oxide, and 2-chloroanthraquinone.

A photoinitiator (H) may be used individually by 1 type, and may be used in combination of 2 or more type. When the number of photoinitiators (H) is two or more, their combination and ratio can be arbitrarily selected.

In the first thermosetting resin composition (x1-1-1), the content of the photoinitiator (H) is preferably 0.1 to 20 parts by mass with respect to 100 parts by mass of the content of the energy ray-curable resin (G), It is more preferable that it is 1-10 mass parts, and it is still more preferable that it is 2-5 mass parts.

(Universal Additive (I))

The 1st thermosetting resin film (x1-1) and the 1st thermosetting resin composition (x1-1-1) may contain the general-purpose additive (I) within the range which does not impair the effect of this invention. A well-known thing may be sufficient as a general-purpose additive (I), According to the objective, it can select arbitrarily, and is not specifically limited.

Preferred general-purpose additives (I) include, for example, rheology control agents, surfactants, silicone oils, plasticizers, antistatic agents, antioxidants, and gettering agents.

A general-purpose additive (I) may be used individually by 1 type, and may be used in combination of 2 or more type. When the general-purpose additive (I) is two or more types, their combination and ratio can be arbitrarily selected.

Content of a general-purpose additive (I) is not specifically limited, What is necessary is just to select suitably according to the objective.

The 1st thermosetting resin composition (x1-1-1) and the 1st thermosetting resin film (x1-1) are within the range which does not impair the effect of this invention. WHEREIN: The above-mentioned polymer component (A) and heat A curable component (B), a hardening accelerator (C), a filler (D), a coupling agent (E), a crosslinking agent (F), an energy-beam curable resin (G), a photoinitiator (H), You may contain the other component which does not correspond to any of the additive (I).

The number of said other components which a 1st thermosetting resin composition (x1-1-1) and 1st thermosetting resin film (x1-1) contain may be one, or two or more types, and when 2 or more types, they Combinations and ratios of can be arbitrarily selected.

Content of the said other component of 1st thermosetting resin composition (x1-1-1) and 1st thermosetting resin film (x1-1) is not specifically limited, What is necessary is just to select suitably according to the objective.

(menstruum)

It is preferable that 1st thermosetting resin composition (x1-1-1) contains a solvent further.

The handleability of the 1st thermosetting resin composition (x1-1-1) containing a solvent becomes favorable.

Although the solvent is not specifically limited, As a preferable thing, For example, Hydrocarbons, such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; Ester, such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.

A solvent may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more solvents are used, their combination and ratio can be arbitrarily selected.

It is preferable that a solvent is methyl ethyl ketone etc. from the point which can mix more uniformly the component contained in 1st thermosetting resin composition (x1-1-1).

(Method for preparing the first thermosetting resin composition (x1-1-1))

The 1st thermosetting resin composition (x1-1-1) mix|blends each component for comprising this, and is prepared.

The order of addition at the time of mixing|blending each component is not specifically limited, You may add 2 or more types of components simultaneously. When using a solvent, you may use by mixing a solvent with any compounding component other than this solvent and diluting this compounding component beforehand, and without diluting any compounding component other than a solvent beforehand, a solvent is mix|blended these You may use by mixing with a component.

The method of mixing each component at the time of mixing|blending is not specifically limited, The method of rotating a stirrer, a stirring blade, etc. and mixing; How to mix using a mixer; What is necessary is just to select suitably from well-known methods, such as a method of adding ultrasonic waves and mixing.

The temperature and time at the time of addition and mixing of each component are not specifically limited as long as each compounding component does not deteriorate, What is necessary is just to adjust suitably, It is preferable that the temperature is 15-30 degreeC.

<First energy ray-curable resin film (x1-2)>

The 1st energy-beam curable resin film (x1-2) contains an energy-beam curable component (a).

The 1st energy-beam curable resin film (x1-2) is formed from the 1st energy-beam curable resin composition (x1-2-1) containing an energy-beam curable component (a), for example.

It is preferable that it is non-hardened, and, as for an energy ray-curable component (a), it is preferable to have adhesiveness, and it is more preferable that it is non-hardened and has adhesiveness.

In addition, in the following description of this specification, "content of each component based on the total amount of the active ingredient of the 1st energy ray-curable resin composition (x1-2-1)" is "first energy ray-curable resin composition" Content of each component of the 1st energy-ray-curable resin film (x1-2) formed by (x1-2-1)" has the same meaning.

(energy-ray-curable component (a))

An energy-beam-curable component (a) is a component hardened|cured by irradiation of an energy-beam, and is also a component for providing film-formability, flexibility, etc. to the 1st energy-beam curable resin film (x1-2).

As the energy ray curable component (a), for example, a polymer (a1) having an energy ray curable group and having a weight average molecular weight of 80,000 to 2,000,000, and a compound (a2) having an energy ray curable group and having a molecular weight of 100 to 80,000 can be heard As for the polymer (a1), at least one part may be crosslinked by the crosslinking agent, and the thing which is not bridge|crosslinked may be sufficient as it.

(Polymer (a1))

Examples of the polymer (a1) having an energy ray-curable group and having a weight average molecular weight of 80,000 to 2,000,000 include an acrylic polymer (a11) having a functional group capable of reacting with a group of another compound, a group reactive with the functional group, and energy and an acrylic resin (a1-1) obtained by polymerization of an energy ray-curable compound (a12) having an energy ray-curable group such as a ray-curable double bond.

Examples of the functional group capable of reacting with the group possessed by other compounds include a hydroxyl group, a carboxy group, an amino group, a substituted amino group (a group in which one or two hydrogen atoms of the amino group are substituted with groups other than hydrogen atoms), and an epoxy group. have. However, it is preferable that the said functional group is groups other than a carboxy group from the point of preventing corrosion of circuits, such as a semiconductor wafer and a semiconductor chip. Among these, it is preferable that the said functional group is a hydroxyl group.

- Acrylic polymer having a functional group (a11)

Examples of the acrylic polymer having a functional group (a11) include those obtained by copolymerization of an acrylic monomer having a functional group and an acrylic monomer not having a functional group. ) may be copolymerized. Moreover, a random copolymer may be sufficient as the acrylic polymer (a11), and a block copolymer may be sufficient as it.

Examples of the acrylic monomer having a functional group include a hydroxyl group-containing monomer, a carboxyl group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy group-containing monomer.

As a hydroxyl-containing monomer, (meth)acrylic acid hydroxymethyl, (meth)acrylic acid 2-hydroxyethyl, (meth)acrylic acid 2-hydroxypropyl, (meth)acrylic acid 3-hydroxypropyl, (meth)acrylic acid 3-hydroxypropyl, (meth)acrylic acid is, for example, ) (meth)acrylic acid hydroxyalkyl, such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate; and non-(meth)acrylic unsaturated alcohols (unsaturated alcohols having no (meth)acryloyl skeleton) such as vinyl alcohol and allyl alcohol.

As a carboxyl group containing monomer, For example, ethylenically unsaturated monocarboxylic acids (monocarboxylic acid which has an ethylenically unsaturated bond), such as (meth)acrylic acid and a crotonic acid; Ethylenically unsaturated dicarboxylic acids (dicarboxylic acid which has an ethylenically unsaturated bond), such as a fumaric acid, itaconic acid, a maleic acid, and a citraconic acid; anhydride of the said ethylenically unsaturated dicarboxylic acid; (meth)acrylic acid carboxyalkyl esters, such as 2-carboxyethyl methacrylate, etc. are mentioned.

A hydroxyl group-containing monomer or a carboxyl group-containing monomer is preferable, and, as for the acryl-type monomer which has a functional group, a hydroxyl-containing monomer is more preferable.

The acrylic monomer which has a functional group which comprises an acrylic polymer (a11) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of acrylic monomers having a functional group constituting the acrylic polymer (a11), combinations and ratios thereof can be arbitrarily selected.

Examples of the acrylic monomer having no functional group include (meth)methyl acrylate, (meth)ethyl acrylate, (meth)acrylate n-propyl, (meth)acrylate isopropyl, (meth)acrylate n-butyl, (meth)acrylate ) Acrylate isobutyl, (meth)acrylic acid sec-butyl, (meth)acrylic acid tert-butyl, (meth)acrylic acid pentyl, (meth)acrylic acid hexyl, (meth)acrylic acid heptyl, (meth)acrylic acid 2-ethylhexyl, (meth)acrylic acid ) isooctyl acrylate, (meth) acrylic acid n-octyl, (meth) acrylic acid n-nonyl, (meth) acrylate isononyl, (meth) acrylate decyl, (meth) acrylate undecyl, (meth) acrylate dodecyl (( Lauryl (meth) acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (myristyl ((meth) acrylate), pentadecyl (meth) acrylate, hexadecyl (meth) acrylate (palmityl (meth) acrylate) , (meth)acrylic acid heptadecyl, and (meth)acrylic acid octadecyl ((meth)acrylic acid stearyl), the alkyl group constituting the alkyl ester has a chain structure having 1 to 18 carbon atoms (meth) acrylic acid alkyl ester and the like.

As the acrylic monomer having no functional group, for example, (meth) methoxymethyl acrylate, methoxyethyl (meth) acrylate, ethoxymethyl (meth) acrylate, ethoxyethyl (meth) acrylate containing an alkoxyalkyl group ( meth)acrylic acid ester; (meth)acrylic acid esters having an aromatic group, including (meth)acrylic acid aryl esters such as (meth)acrylic acid phenyl; Non-crosslinkable (meth)acrylamide and its derivative(s); (meth)acrylic acid ester etc. which have non-crosslinkable tertiary amino groups, such as (meth)acrylic-acid N,N- dimethylaminoethyl, and (meth)acrylic-acid N,N- dimethylaminopropyl, etc. are mentioned.

The acrylic monomer which does not have a functional group which comprises an acrylic polymer (a11) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of acrylic monomers having no functional group constituting the acrylic polymer (a11), combinations and ratios thereof can be arbitrarily selected.

Examples of the non-acrylic monomer include olefins such as ethylene and norbornene; vinyl acetate; Styrene etc. are mentioned.

The non-acrylic monomer constituting the acrylic polymer (a11) may be used alone or in combination of two or more. When there are two or more types of non-acrylic monomers constituting the acrylic polymer (a11), combinations and ratios thereof can be arbitrarily selected.

In the acrylic polymer (a11), the ratio (content) of the amount of the structural units derived from the acrylic monomer having a functional group to the total mass of the structural units constituting it is preferably 0.1 to 50 mass%, and 1 to It is more preferable that it is 40 mass %, and it is still more preferable that it is 3-30 mass %. When the said ratio is such a range, in the acrylic resin (a1-1) obtained by copolymerization of an acrylic polymer (a11) and an energy-beam curable compound (a12), content of an energy-beam curable group is a 1st cured resin film It becomes possible to easily adjust the degree of hardening of (r1) to a preferable range.

The acrylic polymer (a11) which comprises an acrylic resin (a1-1) may be used individually by 1 type, and may be used in combination of 2 or more type. When the acrylic polymer (a11) constituting the acrylic resin (a1-1) is two or more types, their combination and ratio can be arbitrarily selected.

The content of the acrylic resin (a1-1) is preferably 1 to 60 mass%, and preferably 3 to 50 mass%, based on the total amount of the active ingredient of the first energy ray-curable resin composition (x1-2-1). It is more preferable, and it is still more preferable that it is 5-40 mass %.

· Energy ray-curable compound (a12)

The energy ray-curable compound (a12) is a group capable of reacting with the functional group of the acrylic polymer (a11), and preferably has one or two or more selected from the group consisting of an isocyanate group, an epoxy group, and a carboxy group. It is more preferable to have an isocyanate group as

When the energy ray-curable compound (a12) has an isocyanate group as the group, for example, the isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.

It is preferable to have 1-5 energy-beam curable groups in 1 molecule, and, as for an energy-beam-curable compound (a12), it is more preferable to have 1-2 pieces.

As the energy ray-curable compound (a12), for example, 2-methacryloyloxyethyl isocyanate, meta-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1- (bisacryloyloxymethyl)ethyl isocyanate; Acryloyl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, and hydroxyethyl (meth)acrylate; The acryloyl monoisocyanate compound etc. which are obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate are mentioned. Among these, the energy ray-curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.

The energy-beam-curable compound (a12) which comprises acrylic resin (a1-1) may be used individually by 1 type, and may be used in combination of 2 or more type. When there are two or more types of energy ray-curable compounds (a12) constituting the acrylic resin (a1-1), their combination and ratio can be arbitrarily selected.

In the acrylic resin (a1-1), the ratio of the content of the energy ray-curable group derived from the energy ray-curable compound (a12) to the content of the functional group derived from the acrylic polymer (a11) is 20 to 120 mol% It is preferable that it is 35-100 mol%, It is more preferable that it is 50-100 mol%, and it is still more preferable. When the ratio of the said content is such a range, the adhesive force of the 1st cured resin film r1 after hardening becomes larger. Therefore, it can make it easier to suppress film|membrane peeling of the 1st cured resin film r1 as a protective film more easily. Further, when the energy ray-curable compound (a12) is a monofunctional compound (having one of the above groups in one molecule), the upper limit of the ratio of the content is 100 mol%, but the energy ray-curable compound (a12) is different In the case of a functional (having two or more groups in one molecule) compound, the upper limit of the ratio of the content may exceed 100 mol%.

It is preferable that it is 100,000-2,000,000, and, as for the weight average molecular weight (Mw) of a polymer (a1), it is more preferable that it is 300,000-1,500,000.

When the polymer (a1) is at least partially crosslinked with a crosslinking agent, the polymer (a1) does not correspond to any of the above-mentioned monomers described as constituting the acrylic polymer (a11), and the crosslinking agent A monomer having a group reactive with is polymerized and may be crosslinked in a group reactive with the crosslinking agent, or may be crosslinked in a group reactive with the functional group derived from the energy ray-curable compound (a12).

A polymer (a1) may be used individually by 1 type, and may be used in combination of 2 or more type. When the polymer (a1) is two or more types, their combination and ratio can be arbitrarily selected.

(Compound (a2))

Examples of the energy ray-curable group that the compound (a2) having an energy ray-curable group and a weight average molecular weight of 100 to 80,000 has includes a group containing an energy ray-curable double bond, preferably a (meth)acryloyl group, Or a vinyl group etc. are mentioned.

The compound (a2) is not particularly limited as long as it satisfies the above conditions. Examples of the compound (a2) include a low molecular weight compound having an energy ray curable group, an epoxy resin having an energy ray curable group, and a phenol resin having an energy ray curable group.

Among the compounds (a2), examples of the low-molecular-weight compound having an energy ray-curable group include a polyfunctional monomer or oligomer, and an acrylate-based compound having a (meth)acryloyl group is preferable. Examples of the acrylate-based compound include 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth). ) acrylate, 2,2-bis[4-((meth)acryloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryl Oxydiethoxy)phenyl]propane, 9,9-bis[4-(2-(meth)acryloyloxyethoxy)phenyl]fluorene, 2,2-bis[4-((meth)acryloxypolypropane) Foxy) phenyl] propane, tricyclodecane dimethanol di (meth) acrylate, 1,10-decanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonane di Old di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polytetramethylene glycol di(meth)acrylate, ethylene glycol Di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, 2,2-bis[4-((meth)acryloxyethoxy)phenyl]propane, neopentyl bifunctional (meth)acrylates such as glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, and 2-hydroxy-1,3-di(meth)acryloxypropane; Tris(2-(meth)acryloxyethyl)isocyanurate, ε-caprolactone-modified tris-(2-(meth)acryloxyethyl)isocyanurate, ethoxylated glycerin tri(meth)acrylate, pentaeryth Ritol tri (meth) acrylate, trimethylol propane tri (meth) acrylate, ditrimethylol propane tetra (meth) acrylate, ethoxylated pentaerythritol tetra (meth) acrylate, pentaerythritol tetra (meth) acrylate , polyfunctional (meth)acrylates such as dipentaerythritol poly(meth)acrylate and dipentaerythritol hexa(meth)acrylate; Polyfunctional (meth)acrylate oligomers, such as a urethane (meth)acrylate oligomer, etc. are mentioned.

Among the compounds (a2), as an epoxy resin having an energy ray-curable group and a phenol resin having an energy ray-curable group, those described in Paragraph 0043 of “Unexamined Patent Application Publication No. 2013-194102” can be used.

It is preferable that weight average molecular weights are 100-30,000, and, as for a compound (a2), it is more preferable that it is 300-10,000.

A compound (a2) may be used individually by 1 type, and may be used in combination of 2 or more type. When the compound (a2) is two or more types, their combination and ratio can be arbitrarily selected.

(Polymer (b) having no energy ray-curable group)

When a 1st energy-beam curable resin composition (x1-2-1) and a 1st energy-beam curable resin film (x1-2) contain a compound (a2) as an energy-beam curable component (a), it is energy-beam further It is preferable to also contain the polymer (b) which does not have a sclerosing|hardenable group.

The polymer (b) which does not have an energy-ray-curable group may be crosslinked with the crosslinking agent, and the thing which is not bridge|crosslinked may be sufficient as the at least one part.

As a polymer (b) which does not have an energy-ray-curable group, an acrylic polymer, a phenoxy resin, a urethane resin, polyester, a rubber-type resin, an acrylic urethane resin, etc. are mentioned, for example. Among these, it is preferable that the said polymer (b) is an acrylic polymer (Hereinafter, it may abbreviate as "acrylic polymer (b-1)").

A well-known thing may be sufficient as an acrylic polymer (b-1), for example, the homopolymer of 1 type of acrylic monomer may be sufficient, and the copolymer of 2 or more types of acrylic monomers may be sufficient as it. Moreover, the copolymer of 1 type or 2 or more types of acrylic monomers and monomers (non-acrylic type monomers) other than 1 type or 2 or more types of acrylic monomers may be sufficient as an acrylic polymer (b-1).

Examples of the acrylic monomer constituting the acrylic polymer (b-1) include (meth)acrylic acid alkyl ester, (meth)acrylic acid ester having a cyclic skeleton, glycidyl group-containing (meth)acrylic acid ester, hydroxyl group-containing (meth)acrylic acid ester, and substituted amino group containing (meth)acrylic acid ester, etc. are mentioned.

As (meth)acrylic acid alkylester, For example, (meth)acrylic acid methyl, (meth)acrylate, (meth)acrylic acid n-propyl, (meth)acrylic acid isopropyl, (meth)acrylic acid n-butyl, (meth)acrylic acid ) Acrylate isobutyl, (meth)acrylic acid sec-butyl, (meth)acrylic acid tert-butyl, (meth)acrylic acid pentyl, (meth)acrylic acid hexyl, (meth)acrylic acid heptyl, (meth)acrylic acid 2-ethylhexyl, (meth)acrylic acid ) isooctyl acrylate, (meth) acrylic acid n-octyl, (meth) acrylic acid n-nonyl, (meth) acrylate isononyl, (meth) acrylate decyl, (meth) acrylate undecyl, (meth) acrylate dodecyl (( Lauryl (meth) acrylate), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (myristyl ((meth) acrylate), pentadecyl (meth) acrylate, hexadecyl (meth) acrylate (palmityl (meth) acrylate) , (meth) acrylic acid heptadecyl, and (meth) acrylate octadecyl ((meth) acrylate stearyl (meth) acrylate), the alkyl group constituting the alkyl ester has a chain structure having 1 to 18 carbon atoms, alkyl (meth) acrylate Ester etc. are mentioned.

As (meth)acrylic acid ester which has cyclic skeleton, For example, (meth)acrylic-acid cycloalkyl ester, such as (meth)acrylic-acid isobornyl and (meth)acrylic-acid dicyclopentanyl; (meth)acrylic acid aralkyl esters, such as (meth)acrylic-acid benzyl; (meth)acrylic acid cycloalkenyl esters, such as (meth)acrylic acid dicyclopentenyl ester; (meth)acrylic acid cycloalkenyloxyalkyl esters, such as (meth)acrylic-acid dicyclopentenyloxyethyl ester, etc. are mentioned.

As glycidyl group containing (meth)acrylic acid ester, (meth)acrylic-acid glycidyl etc. are mentioned, for example. As said hydroxyl-containing (meth)acrylic acid ester, For example, (meth)acrylic acid hydroxymethyl, (meth)acrylic acid 2-hydroxyethyl, (meth)acrylic acid 2-hydroxypropyl, (meth)acrylic acid 3-hydroxy hydroxypropyl, (meth)acrylic acid 2-hydroxybutyl, (meth)acrylic acid 3-hydroxybutyl, and (meth)acrylic acid 4-hydroxybutyl, etc. are mentioned.

As said substituted amino-group containing (meth)acrylic acid ester, (meth)acrylic-acid N-methylaminoethyl etc. are mentioned, for example.

Examples of the non-acrylic monomer constituting the acrylic polymer (b-1) include olefins such as ethylene and norbornene; vinyl acetate; Styrene etc. are mentioned.

As a polymer (b) which does not have an energy-beam-hardenable group by which at least one part was bridge|crosslinked with a crosslinking agent, what the reactive functional group in a polymer (b) reacted with a crosslinking agent is mentioned, for example.

The reactive functional group may be appropriately selected according to the kind of the crosslinking agent, and is not particularly limited. For example, when a crosslinking agent is a polyisocyanate compound, as said reactive functional group, a hydroxyl group, a carboxy group, an amino group, etc. are mentioned, Among these, a hydroxyl group with high reactivity with an isocyanate group is preferable.

Moreover, when a crosslinking agent is an epoxy compound, a carboxy group, an amino group, an amide group etc. are mentioned as said reactive functional group, Among these, a carboxy group with high reactivity with an epoxy group is preferable.

However, it is preferable that the said reactive functional group is a group other than a carboxy group from the point of preventing corrosion of the circuit of a semiconductor wafer or a semiconductor chip.

As a polymer (b) which has a reactive functional group and does not have an energy-beam curable group, what was obtained by superposing|polymerizing the monomer which has a reactive functional group at least is mentioned, for example. In the case of the acrylic polymer (b-1), as any one or both of the acrylic monomers and non-acrylic monomers exemplified as monomers constituting the acrylic polymer (b-1), those having a reactive functional group may be used. For example, the polymer (b) having a hydroxyl group as a reactive functional group includes, for example, those obtained by polymerizing a hydroxyl group-containing (meth)acrylic acid ester. In addition to this, the above-mentioned acrylic monomer or non-acrylic monomer In the above, those obtained by polymerizing a monomer in which one or two or more hydrogen atoms are substituted with the reactive functional group may be mentioned.

In the polymer (b) having a reactive functional group, the ratio (content) of the amount of the structural unit derived from the monomer having the reactive functional group to the total mass of the structural units constituting it is preferably 1 to 20 mass%, , more preferably 2 to 10 mass%. When the said ratio is in such a range, in a polymer (b), the grade of crosslinking becomes a more preferable range.

It is preferable that the weight average molecular weight (Mw) of the polymer (b) which does not have an energy-beam curable group is 10,000-2,000,000 from the point which the film-formability of the 1st energy-beam curable resin composition (x1-2-1) becomes more favorable, , It is more preferable that it is 100,000-1,500,000.

The polymer (b) which does not have an energy-ray-curable group may be used individually by 1 type, and may be used in combination of 2 or more type. When the polymer (b) which does not have an energy-ray-curable group is 2 or more types, those combinations and a ratio can be selected arbitrarily.

As a 1st energy-beam curable resin composition (x1-2-1), the thing containing either one or both of a polymer (a1) and a compound (a2) is mentioned.

And when the 1st energy-ray-curable resin composition (x1-2-1) contains a compound (a2), it is preferable to also contain the polymer (b) which does not have an energy-beam curable group further, in this case, further It is also preferable to contain the polymer (a1).

Moreover, the 1st energy-ray-curable resin composition (x1-2-1) may contain the polymer (a1) and the polymer (b) which do not have an energy-beam curable group together without containing a compound (a2).

When the 1st energy-ray-curable resin composition (x1-2-1) contains a polymer (a1), a compound (a2), and the polymer (b) which does not have an energy-beam curable group, content of a compound (a2) is, It is preferable that it is 10-400 mass parts with respect to 100 mass parts of total content of a polymer (a1) and a polymer (b) which does not have an energy-beam curable group, and it is more preferable that it is 30-350 mass parts.

The total content of the energy ray-curable component (a) and the polymer (b) not having an energy ray-curable group is 5-90 mass based on the total amount of the active ingredient of the first energy ray-curable resin composition (x1-2-1). It is preferable that it is %, It is more preferable that it is 10-80 mass %, It is more preferable that it is 20-70 mass %. When content of an energy-beam curable component is such a range, the energy-beam sclerosis|hardenability of a 1st energy-beam curable resin film (x1-2) becomes more favorable.

The first energy ray-curable resin composition (x1-2-1) is, in addition to the energy ray-curable component, according to the purpose, a thermosetting component, a curing accelerator, a photopolymerization initiator, a filler, a coupling agent, a crosslinking agent and a general-purpose additive from the group consisting of You may contain the 1 type(s) or 2 or more types chosen.

For example, the 1st energy-beam curable resin film (x1-2) formed by using the 1st energy-beam curable resin composition (x1-2-1) containing an energy-beam curable component and a thermosetting component is heating The adhesive force with respect to a to-be-adhered body improves by this, and the intensity|strength of the 1st cured resin film r1 formed from this 1st energy-beam curable resin film (x1-2) also improves.

As a thermosetting component, a photoinitiator, a filler, a coupling agent, a crosslinking agent, and a general-purpose additive in the 1st energy ray-curable resin composition (x1-2-1), respectively, the 1st thermosetting resin composition (x1-1-) The same thing as the thermosetting component (B), hardening accelerator (C), photoinitiator (H), filler (D), coupling agent (E), crosslinking agent (F), and general-purpose additive (I) in 1) can be heard

In the 1st energy ray-curable resin composition (x1-2-1), a thermosetting component, a photoinitiator, a filler, a coupling agent, a crosslinking agent, and a general-purpose additive may be used individually by 1 type, respectively, and 2 or more types They may be used in combination. When using two or more types in combination, those combinations and ratios can be selected arbitrarily.

The content of the thermosetting component, the photopolymerization initiator, the filler, the coupling agent, the crosslinking agent, and the general-purpose additive in the first energy ray-curable resin composition (x1-2-1) may be appropriately adjusted according to the purpose, and is not particularly limited. does not

It is preferable that the 1st energy-beam curable resin composition (x1-2-1) contains a solvent further at the point which the handleability improves by dilution.

As a solvent which 1st energy-beam curable resin composition (x1-2-1) contains, the thing similar to the solvent in 1st thermosetting resin composition (x1-1-1) is mentioned, for example.

The solvent which 1st energy-beam curable resin composition (x1-2-1) contains may be used individually by 1 type, and may be used in combination of 2 or more type. When using two or more types in combination, those combinations and ratios can be selected arbitrarily.

(Other ingredients)

A 1st energy-beam curable resin composition (x1-2-1) and a 1st energy-beam curable resin film (x1-2) correspond to any of the above-mentioned components within the range which does not impair the effect of this invention. You may contain other components which do not do this.

The number of said other components which a 1st energy ray-curable resin composition (x1-2-1) and 1st energy-beam curable resin film (x1-2) contain may be one, or two or more types, When 2 or more types , combinations and ratios thereof can be arbitrarily selected.

Content of the said other component of 1st energy-beam curable resin composition (x1-2-1) and 1st energy-beam curable resin film (x1-2) is not specifically limited, What is necessary is just to select suitably according to the objective.

(Method for producing the first energy ray-curable resin composition (x1-2-1))

The 1st energy-beam curable resin composition (x1-2-1) is obtained by mix|blending each component for comprising this. The order of addition at the time of mixing|blending each component is not specifically limited, You may add 2 or more types of components simultaneously.

When using a solvent, you may use by mixing a solvent with any compounding component other than this solvent and diluting this compounding component beforehand, and without diluting any compounding component other than a solvent beforehand, a solvent is mix|blended these You may use by mixing with a component. The method of mixing each component at the time of mixing|blending is not specifically limited, The method of rotating a stirrer, a stirring blade, etc. and mixing; How to mix using a mixer; What is necessary is just to select suitably from well-known methods, such as a method of adding ultrasonic waves and mixing.

The temperature and time at the time of addition and mixing of each component are not specifically limited as long as each compounding component does not deteriorate, What is necessary is just to adjust suitably, It is preferable that the temperature is 15-30 degreeC.

<First Support Sheet (Y1)>

The 1st support sheet Y1 functions as a support body for supporting the 1st curable resin x1.

As shown in FIG. 10, the 1st support sheet Y1 may be comprised only with the base material 51, and as shown in FIG. 11, the laminated body of the base material 51 and the adhesive layer 61 may be sufficient, and FIG. As shown to 12, the laminated body in which the base material 51, the intermediate|middle layer 71, and the adhesive layer 61 were laminated|stacked in this order may be sufficient. The laminate in which the base material 51, the intermediate|middle layer 71, and the adhesive layer 61 were laminated|stacked in this order is suitable for use as a back grind sheet (b-BG).

Hereinafter, the base material which the 1st support sheet Y1 has, the adhesive layer which the 1st support sheet Y1 may have, and an intermediate|middle layer are demonstrated.

(write)

The base material is a sheet-like or film-like thing, and as the constituent material, the following various resins are mentioned, for example.

As resin which comprises a base material, For example, polyethylene, such as a low density polyethylene (LDPE), a linear low density polyethylene (LLDPE), and a high density polyethylene (HDPE); polyolefins other than polyethylene, such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resin; Ethylene-based copolymers such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene-norbornene copolymer (copolymer obtained using ethylene as a monomer) ; Vinyl chloride-type resins, such as polyvinyl chloride and a vinyl chloride copolymer (resin obtained using vinyl chloride as a monomer); polystyrene; polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalenedicarboxylate, and wholly aromatic polyester in which all structural units have an aromatic cyclic group; Copolymer of 2 or more types of said polyester; poly(meth)acrylic acid ester; Polyurethane ; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; Polyether ketone etc. are mentioned.

Moreover, as resin which comprises a base material, polymer alloys, such as a mixture of the said polyester and other resin, are also mentioned, for example. In the polymer alloy of the polyester and the resin other than that, it is preferable that the amount of the resin other than the polyester is relatively small.

Moreover, as resin which comprises a base material, For example, 1 type(s) or 2 or more types of the said resin illustrated here are bridge|crosslinked bridge|crosslinking resin; Modified resins, such as an ionomer using 1 type(s) or 2 or more types among the said resin illustrated so far, are also mentioned.

Resin which comprises a base material may be used individually by 1 type, and may be used in combination of 2 or more type. When two or more types of resins constituting the base material are used, combinations and ratios thereof can be arbitrarily selected.

A single layer (single layer) may be sufficient as a base material, and two or more layers may be sufficient as it. When a base material is multiple layers, these multiple layers may mutually be same or different, and the combination of these multiple layers is not specifically limited.

The thickness of the substrate is preferably 5 µm to 1,000 µm, more preferably 10 µm to 500 µm, still more preferably 15 µm to 300 µm, and still more preferably 20 µm to 150 µm.

Here, "thickness of a base material" means the thickness of the whole base material, for example, the thickness of the base material which consists of multiple layers means the thickness of the sum total of all the layers which comprise a base material.

It is preferable that a base material has high precision of thickness, ie, that the dispersion|variation in thickness was suppressed irrespective of a site|part. Among the constituent materials mentioned above, as a material with high precision of thickness usable for constituting such a base material, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, etc. are mentioned. can

The base material may contain various well-known additives, such as a filler, a colorant, an antistatic agent, antioxidant, an organic lubricant, a catalyst, and a softener (plasticizer), in addition to the main constituent materials, such as the said resin.

The base material may be transparent, may be opaque, may be colored according to the objective, or another layer may be vapor-deposited. Moreover, when 1st curable resin (x1) is a 1st energy ray-curable resin film (x1-2), and when an adhesive layer is an energy-beam curable adhesive layer, it is preferable that a base material transmits an energy ray. .

The substrate can be produced by a known method. For example, the base material containing resin can be manufactured by shape|molding the resin composition containing the said resin.

(Adhesive layer)

The pressure-sensitive adhesive layer is in the form of a sheet or a film, and contains an pressure-sensitive adhesive.

As the pressure-sensitive adhesive, for example, an acrylic resin (a pressure-sensitive adhesive composed of a resin having a (meth)acryloyl group), a urethane-based resin (a pressure-sensitive adhesive composed of a resin having a urethane bond), a rubber-based resin (a pressure-sensitive adhesive composed of a resin having a rubber structure) and adhesive resins such as silicone resins (adhesives made of a resin having a siloxane bond), epoxy resins (adhesives made of resins having an epoxy group), polyvinyl ethers, and polycarbonates. Among these, acrylic resin is preferable.

In addition, in this invention, "adhesive resin" is a concept including both the resin which has adhesiveness, and the resin which has adhesiveness, For example, not only the resin itself has adhesiveness, but also other additives, such as Resin which shows adhesiveness by combined use with a component, resin etc. which show adhesiveness by presence of triggers, such as heat or water, are also included.

One layer (single layer) may be sufficient as an adhesive layer, and two or more layers may be sufficient as it. When an adhesive layer is multiple layers, these multiple layers may mutually be same or different, and the combination of these multiple layers is not specifically limited.

It is preferable that they are 1 micrometer - 1000 micrometers, as for the thickness of an adhesive layer, it is more preferable that they are 5 micrometers - 500 micrometers, It is still more preferable that they are 10 micrometers - 100 micrometers. Here, the "thickness of an adhesive layer" means the thickness of the whole adhesive layer, for example, the thickness of the adhesive layer which consists of multiple layers means the thickness of the sum total of all the layers which comprise an adhesive layer.

The pressure-sensitive adhesive layer may be formed using an energy ray-curable pressure-sensitive adhesive, or may be formed using a non-energy-ray-curable pressure-sensitive adhesive. The pressure-sensitive adhesive layer formed using the energy-beam-curable pressure-sensitive adhesive can easily control physical properties before and after curing.

<middle floor>

The intermediate layer is in the form of a sheet or a film, and the constituent material thereof may be appropriately selected according to the purpose, and is not particularly limited. For example, when the purpose of suppressing deformation of the first cured resin film (r1) by reflecting the shape of bumps present on the semiconductor surface in the protective film covering the semiconductor surface, it is a preferable constituent material of the intermediate layer. urethane (meth)acrylate etc. are mentioned at the point which has high uneven|corrugated followable|trackability and the sticking property of an intermediate|middle layer improves more.

One layer (single layer) may be sufficient as an intermediate|middle layer, and two or more layers may be sufficient as it. When an intermediate|middle layer is a multiple layer, these multiple layers may mutually be same or different, and the combination of these multiple layers is not specifically limited.

The thickness of the intermediate layer can be appropriately adjusted according to the height of the bump on the semiconductor surface to be protected, but from the viewpoint of easily absorbing the influence of the bump having a relatively high height, it is preferably 50 µm to 600 µm, 70 It is more preferable that they are micrometer - 500 micrometers, and it is still more preferable that they are 80 micrometers - 400 micrometers. Here, the "thickness of an intermediate|middle layer" means the thickness of the whole intermediate|middle layer, for example, the thickness of the intermediate|middle layer which consists of multiple layers means the thickness of the sum total of all the layers which comprise an intermediate|middle layer.

Next, the manufacturing method of the 1st laminated body (alpha)1 is demonstrated.

[Method for Producing First Laminate (α1)]

The first laminate (α1) can be produced by sequentially laminating the respective layers so as to have a corresponding positional relationship.

For example, in the case of laminating the pressure-sensitive adhesive layer or the intermediate layer on the substrate when manufacturing the first supporting sheet (Y1), the pressure-sensitive adhesive composition or the composition for forming an intermediate layer is coated on the substrate and dried as necessary, Alternatively, by irradiating an energy ray, an adhesive layer or an intermediate layer can be laminated.

Examples of the coating method include a spin coat method, a spray coat method, a bar coat method, a knife coat method, a roll coat method, a roll knife coat method, a blade coat method, a die coat method, and a gravure coat method. .

On the other hand, for example, when the first curable resin (x1) is further laminated on the pressure-sensitive adhesive layer that has been laminated on the substrate, the first thermosetting resin composition (x1-1-1) or It is possible to coat 1st energy-beam curable resin composition (x1-2-1), and to form 1st curable resin (x1) directly.

Similarly, when a pressure-sensitive adhesive layer is further laminated on an intermediate layer on which lamination is completed on a substrate, it is possible to directly form the pressure-sensitive adhesive layer by coating the pressure-sensitive adhesive composition on the intermediate layer.

As described above, when a laminated structure of two consecutive layers is formed using any composition, it is possible to form a new layer by further coating the composition on the layer formed from the composition. However, the layer to be laminated later among these two layers is previously formed using the above composition on another release film, and the exposed surface of the layer on which this formation is completed is formed on the side opposite to the side in contact with the release film has already been formed. It is preferable to form the laminated structure of two continuous layers by bonding together with the exposed surface of this completed remaining layer. At this time, it is preferable to apply the said composition to the peeling process surface of a peeling film. What is necessary is just to remove a peeling film after formation of a laminated structure as needed.

[Second laminate (α2)]

The second laminate α2 is not particularly limited as long as it is a configuration capable of forming a protective film on the back surface of the semiconductor wafer, and for example, the same configuration as that of the first laminate α1 can be adopted.

Therefore, the material and structure similar to the said 1st curable resin (x1) may be sufficient as 2nd curable resin (x2) which 2nd laminated body (alpha)2 has.

(Colorant (J))

Here, from the viewpoint of improving the visibility of the print formed by laser marking, the viewpoint of improving the designability of the semiconductor chip by making it difficult to see the grinding marks on the back surface of the semiconductor chip, the second curable resin (x2) and the second curability It is preferable that the composition for 2nd curable resin formation for forming resin (x2) contains a coloring agent (J).

As a coloring agent (J), well-known things, such as an inorganic type pigment, an organic type pigment, and organic type dye, are mentioned, for example.

Examples of the organic pigments and organic dyes include aminium pigments, cyanine pigments, merocyanine pigments, croconium pigments, squarylium pigments, azulenium pigments, polymethine pigments, and naphthoquinone pigments. Pigment, pyrylium pigment, phthalocyanine pigment, naphthalocyanine pigment, naphtholactam pigment, azo pigment, condensed azo pigment, indigo pigment, perinone pigment, perylene pigment, dioxazine pigment, quinacridone pigment , isoindolinone dye, quinophthalone dye, pyrrole dye, thioindigo dye, metal complex dye (metal complex dye), dithiol metal complex dye, indole phenol dye, triallylmethane dye, and anthraquinone dyes, naphthol dyes, azomethine dyes, benzimidazolone dyes, pyranthrone dyes and threne dyes.

Examples of the inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO ( Indium tin oxide) type pigment|dye, ATO (antimony tin oxide) type pigment|dye, etc. are mentioned.

One type may be sufficient as the coloring agent (J) which 2nd curable resin (x2) and the composition for 2nd curable resin formation for forming 2nd curable resin (x2) contain may be sufficient as it. When the colorant (J) is two or more types, their combination and ratio can be arbitrarily selected.

When using a coloring agent (J), what is necessary is just to adjust content of the coloring agent (J) of 2nd curable resin (x2) suitably according to the objective. For example, as described above, the second cured resin film (r2), which is a cured product formed by curing the second curable resin (x2), may be printed by laser irradiation, and the second curable resin (x2) ( Printing visibility can be adjusted by adjusting content of the coloring agent (J) of x2) and adjusting the light transmittance of a protective film. Moreover, by adjusting content of a coloring agent (J), the designability of a protective film can be improved and it can also be made hard to see the grinding mark on the back surface of a semiconductor wafer. In consideration of these points, in the composition for forming the second curable resin for forming the second curable resin (x2), the total content of all components other than the solvent (also referred to as the total mass of the solid content of the composition for forming the second curable resin) It is preferable that the ratio of the content of the coloring agent (J) to (that is, the content of the coloring agent (J) in the second curable resin (x2)) is 0.1 to 10 mass%, more preferably 0.1 to 7.5 mass% It is preferable, and it is especially preferable that it is 0.1-5 mass %. When the said content of a coloring agent (J) is more than the said lower limit, the effect by using a coloring agent (J) is acquired more notably. Moreover, when the said content of a coloring agent (J) is below the said upper limit, the excessive fall of the light transmittance of 2nd curable resin (x2) is suppressed.

Moreover, also in 1st curable resin (x1) and the composition for 1st curable resin formation mentioned above, you may contain the coloring agent (J). However, from a viewpoint of ensuring the visibility of the division scheduled line of the wafer for semiconductor chip manufacture, it is preferable that content of the coloring agent (J) is an amount within the range in which transparency of the level which can ensure the visibility of the said division schedule line is ensured.

Moreover, the structure similar to the said 1st support sheet Y1 may be sufficient as the 2nd support sheet Y2 which the 2nd laminated body alpha 2 has. Specifically, the second support sheet Y2 may consist of only the base material 51 as shown in Fig. 10, similarly to the first support sheet Y1, or the base material 51 as shown in Fig. 11 . and the pressure-sensitive adhesive layer 61 may be laminated, or the pressure-sensitive adhesive sheet in which the base material 51, the intermediate layer 71, and the pressure-sensitive adhesive layer 61 are laminated as shown in FIG. 12 may be used.

The structure and material similar to the base material, intermediate|middle layer, and adhesive layer which the 1st support sheet Y1 has may be sufficient as the base material, intermediate|middle layer, and adhesive layer which 2nd support sheet Y2 has.

Example

The present invention will be specifically described with reference to the following examples, but the present invention is not limited to the following examples.

1. Preparation of wafers for semiconductor chip manufacturing

As a wafer for semiconductor chip manufacturing, a 12-inch silicon wafer (wafer thickness of 775 µm) having a line to be divided in half cut was used. The width of the half-cut portion of the silicon wafer (the width of the groove portion) was 200 mu m, and the depth of the groove was 200 mu m.

2. Pasting of 1st curable resin (x1)

On the front surface side (half-cut formation surface) of the wafer for semiconductor chip production, a back grind tape ("E-8510HR" manufactured by Lintec Co., Ltd.) and a first curable resin (x1) having a thickness of 90 µm as the first supporting sheet Y1 The 1st laminated body (alpha1) which laminated|stacked the layer (X1) was affixed, making the 1st curable resin (x1) side a sticking surface, and pressurizing on the following conditions.

・Attaching device: Fully automatic bonding machine (manufactured by Lintech Co., Ltd., product name “RAD-3510”)

· Roller pressure: 0.5 MPa

· Roller height: -400 ㎛

・Attaching speed: 5 mm/sec

・Attaching temperature: 90 ℃

In addition, the shear modulus G' of the layer (X1) was 1,000 Pa.

The shear modulus G' was measured by the following method.

With respect to the 1st curable resin (x1), 10 sheets of 100-micrometer-thick 1st curable resin (x1) were laminated|stacked, and the 1 mm-thick 1st curable resin (x1) layer (X1) was prepared. Next, this 1st curable resin (x1) was cut out into the disk shape of diameter 8mm, and the test piece of the layer (X1) of 1st curable resin (x1) was obtained. And shear viscosity measuring apparatus: The installation point of the test piece of a dynamic viscoelasticity measuring apparatus (ARES; manufactured by TA Instruments) is insulated in advance at 90 degreeC, the test piece is mounted at this attachment point, and it is on the upper surface of the test piece. The test piece was fixed and installed at the said installation point by pressing against the measuring jig. Next, under the conditions of the temperature of 90 degreeC and the measurement frequency of 1 Hz, 400% of strain was generated in the test piece, and the shear modulus G' of the test piece was measured.

The 1st curable resin (x1) was manufactured using the 1st thermosetting resin composition (x1-1-1).

The component used for preparation of the 1st thermosetting resin composition (x1-1-1) is shown below.

· Polymer component

Polymer component (A)-1: butyl acrylate (hereinafter, abbreviated as “BA”) (55 parts by mass), methyl acrylate (hereinafter, abbreviated as “MA”) (10 parts by mass), glycidyl methacrylate (hereinafter abbreviated as "GMA") (20 parts by mass) and acrylic acid-2-hydroxyethyl (hereinafter, abbreviated as "HEA") (15 parts by mass) of an acrylic resin (weight average molecular weight 800,000, glass transition temperature -28 ° C).

· Epoxy resin

Epoxy resin (B1)-1: Liquid bisphenol F-type epoxy resin ("YL983U" by Mitsubishi Chemical Corporation); Weight average molecular weight = 340

Epoxy resin (B1)-2: polyfunctional aromatic type epoxy resin ("EPPN-502H" manufactured by Nippon Kayaku Co., Ltd.); Weight average molecular weight = 1,000

Epoxy resin (B1)-3: dicyclopentadiene type epoxy resin ("EPICLON HP-7200" by DIC Corporation); Weight average molecular weight = 600

· Thermal curing agent

Thermosetting agent (B2)-1: novolak type phenolic resin ("BRG-556" manufactured by Showa Denko Co., Ltd.)

· Hardening accelerator

Curing accelerator (C)-1: 2-phenyl-4,5-dihydroxymethylimidazole ("Curesol 2PHZ-PW" manufactured by Shikoku Chemical Industry Co., Ltd.)

· Filling

Filler (D)-1: Spherical silica modified with an epoxy group ("Admanano YA050C-MKK" manufactured by Admatex Corporation); 0.05 µm (average particle size); 19 mass % (content rate in 1st thermosetting resin composition (x1-1-1))

Polymer component (A)-1 100 mass parts, epoxy resin (B1)-1 135 mass parts, epoxy resin (B1)-2 90 mass parts, epoxy resin (B1)-3 150 mass parts, thermosetting agent 180 parts by mass of (B2)-1, 1 part by mass of curing accelerator (C)-1, and 160 parts by mass of filler (D)-1, dissolved or dispersed in methyl ethyl ketone, stirred at 23° C., solid content The concentration prepared the first thermosetting resin composition (x1-1-1) of 55 mass%.

The first thermosetting resin composition (x1- 1-1) was coated, and by drying at 100 degreeC for 2 minutes, the 1st thermosetting resin film (x1-1) which has 90-micrometer-thick thermosetting property was manufactured as 1st curable resin (x1).

Next, the exposed surface of the first curable resin (x1) is bonded to the exposed surface of the pressure-sensitive adhesive layer of the back grind tape, and the back grind tape, the first curable resin (x1), and the release film are formed in these thickness directions. A first laminate (α1) laminated in this order was obtained.

When affixing this 1st laminated body (alpha) on the wafer for semiconductor chip manufacture, the peeling film was peeled from the 1st laminated body (alpha), 1st curable resin (x1) was exposed and used.

3. Evaluation

After the wafer for semiconductor chip manufacture to which the 1st curable resin (x1) was stuck is heated and hardened at 160 degreeC for 1 hour, and it is set as the 1st cured resin film (r1), it back-grinds and grinds the back surface to 625 micrometers, and a semiconductor After the thickness of the wafer for chip manufacture was 150 micrometers, back surface observation and cross-section grinding|polishing observation were performed. The cross-sectional polishing observation was performed with an optical microscope ("VHX-1000" manufactured by Keyence Corporation).

4. Results

The back surface observation result is shown in FIG. 13, and the cross-section grinding|polishing observation result is shown in FIG. It was confirmed from any result that the embedding property of the 1st cured resin film r1 with respect to the groove part 13 was favorable. Moreover, it has confirmed that the coating property of the 1st cured resin film (r1) on the wafer surface was also favorable from the cross-sectional polishing observation result. From these results, it has confirmed that it is possible to obtain the semiconductor chip in which the bump formation surface and the side surface were coat|covered favorably with the 1st cured resin film (r1) by the manufacturing method of this invention.

10: wafer for semiconductor chip manufacturing
11: Wafer
11a: bump forming surface
11b: back side
12 : bump
13: home
40: semiconductor chip
x1: first curable resin
r1: 1st cured resin film
X1: Floor
Y1: first support sheet
α1: first laminate
x2: second curable resin
r2: 2nd cured resin film
X2: Floor
Y2: second support sheet
α2: second laminate
51: description
61: adhesive layer
71: middle layer

Claims (14)

The following steps (S1) to (S4) are included in this order,
Step (S1): A step of preparing a semiconductor chip manufacturing wafer in which a groove portion as a line to be divided is formed on the bump formation surface of the semiconductor wafer having a bump formation surface having bumps without reaching the back surface
Step (S2): A first curable resin (x1) is pressed and affixed to the bump formation surface of the wafer for semiconductor chip production, and the bump formation surface of the wafer for semiconductor chip production is applied with a first curable resin (x1) The process of embedding the said 1st curable resin (x1) in the said groove part formed in the said wafer for semiconductor chip manufacture while coating|covering
- Process (S3): The process of hardening the said 1st curable resin (x1), and obtaining the wafer for semiconductor chip manufacture in which the 1st cured resin film (r1) was formed.
Step (S4): the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed is divided into pieces along the division scheduled line, so that at least the bump formation surface and the side surface are the first cured resin film r1 Process of obtaining a coated semiconductor chip
Further, after the step (S2), before the step (S3), after the step (S3), and before the step (S4), or in the step (S4), the following step (S -BG), the manufacturing method of a semiconductor chip containing.
· Step (S-BG): A step of grinding the back surface of the wafer for manufacturing semiconductor chips The method of claim 1,
The step (S2) is a first laminate having a laminate structure in which a first support sheet (Y1) and a layer (X1) of the first curable resin (x1) are laminated on the bump formation surface of the semiconductor chip manufacturing wafer The manufacturing method of the semiconductor chip implemented by pressurizing and affixing the sieve (α1) using the said layer (X1) as a affixing surface. 3. The method of claim 2,
including the step (S-BG) after the step (S2) and before the step (S3);
In the step (S-BG), the first supporting sheet (α1) is removed from the first laminate (α1) after grinding the back surface of the wafer for semiconductor chip production in a state in which the first laminate (α1) is attached. Y1) is carried out by peeling,
In the step (S4), the portion of the first cured resin film r1 of the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed, which is formed in the groove portion, is cut along the division scheduled line. A method for manufacturing a semiconductor chip, which is implemented. 3. The method of claim 2,
including the step (S-BG) after the step (S3) and before the step (S4);
The step (S3) is performed without peeling the first support sheet (Y1) from the first laminate (α1),
In the step (S-BG), the first supporting sheet (α1) is removed from the first laminate (α1) after grinding the back surface of the wafer for semiconductor chip production in a state in which the first laminate (α1) is attached. Y1) is carried out by peeling,
In the step (S4), the portion of the first cured resin film r1 of the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed, which is formed in the groove portion, is cut along the division scheduled line. A method for manufacturing a semiconductor chip, which is implemented. 3. The method of claim 2,
including the step (S-BG) after the step (S3) and before the step (S4);
Peeling the first support sheet Y1 from the first laminate α1 after the step (S2) and before the step (S3);
In the step (S-BG), a back grind sheet (b-BG) is attached to the surface of the first cured resin film (r1) of the wafer for semiconductor chip production on which the first cured resin film (r1) is formed, After grinding the back surface of the wafer for semiconductor chip production in a state in which the back grind sheet (b-BG) is attached, the back grind sheet (b-BG) is removed from the wafer for semiconductor chip production on which the first cured resin film (r1) is formed. ) is carried out by peeling
In the step (S4), the portion of the first cured resin film r1 of the semiconductor chip manufacturing wafer on which the first cured resin film r1 is formed, which is formed in the groove portion, is cut along the division scheduled line. A method for manufacturing a semiconductor chip, which is implemented. 3. The method of claim 2,
the step (S-BG) is included in the step (S4);
Peeling the first support sheet Y1 from the first laminate α1 after the step (S2) and before the step (S3);
In the step (S4), the first cured resin film r1 of the wafer for semiconductor chip manufacturing on which the first cured resin film r1 is formed is formed in the groove portion along the dividing line. or, after forming a modified region along the line to be divided, as the step (S-BG), the first cured resin film (r1) of the semiconductor chip manufacturing wafer on which the first cured resin film (r1) is formed A method of manufacturing a semiconductor chip, which is carried out by affixing a back grind sheet (b-BG) to the surface of 7. The method according to any one of claims 1 to 6,
Furthermore, the manufacturing method of a semiconductor chip including the following process (T).
- Process (T): Process of forming a 2nd cured resin film (r2) on the said back surface of the said wafer for semiconductor chip manufacture 8. The method according to any one of claims 1 to 7,
Furthermore, the manufacturing method of a semiconductor chip including the following process (U).
Step (U): removing the first cured resin film r1 covering the top of the bump or the first cured resin film r1 adhering to a part of the top of the bump, exposing process 9. The method of claim 8,
The method for manufacturing a semiconductor chip, wherein the step (U) is performed by plasma etching. 10. The method according to any one of claims 1 to 9,
At a temperature of 90° C. and a frequency of 1 Hz, a strain of 400% is generated in the test piece of the layer (X1), and the strain dispersion measurement is performed to measure the shear modulus G' of the test piece of the layer (X1). The method for manufacturing a semiconductor chip, wherein the shear modulus G' is 5.0 × 10 Pa to 1.0 × 10 ⁶ Pa. 11. The method according to any one of claims 1 to 10,
The thickness of the said layer (X1) is 10 micrometers or more and 200 micrometers or less, The manufacturing method of the semiconductor chip. 12. The method according to any one of claims 1 to 11,
The width of the said groove part is 10 micrometers - 2000 micrometers, The manufacturing method of the semiconductor chip. 13. The method according to any one of claims 1 to 12,
The depth of the said groove part is 30 micrometers - 700 micrometers, The manufacturing method of the semiconductor chip. 14. The method according to any one of claims 1 to 13,
The manufacturing method of the semiconductor chip in which the said 1st cured resin film (r1) is transparent.

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