KR20220093138A - 촬상 장치, 그 동작 방법, 및 전자 기기 - Google Patents

촬상 장치, 그 동작 방법, 및 전자 기기 Download PDF

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Publication number
KR20220093138A
KR20220093138A KR1020227017275A KR20227017275A KR20220093138A KR 20220093138 A KR20220093138 A KR 20220093138A KR 1020227017275 A KR1020227017275 A KR 1020227017275A KR 20227017275 A KR20227017275 A KR 20227017275A KR 20220093138 A KR20220093138 A KR 20220093138A
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South Korea
Prior art keywords
transistor
circuit
layer
node
voltage
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Pending
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KR1020227017275A
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English (en)
Korean (ko)
Inventor
세이이치 요네다
히로키 이노우에
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220093138A publication Critical patent/KR20220093138A/ko
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N5/378—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/709—Circuitry for control of the power supply
    • H01L27/14612—
    • H01L27/14636—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/707—Pixels for event detection
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H04N5/3745—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
KR1020227017275A 2019-11-07 2020-10-27 촬상 장치, 그 동작 방법, 및 전자 기기 Pending KR20220093138A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-202403 2019-11-07
JP2019202403 2019-11-07
PCT/IB2020/060041 WO2021090110A1 (ja) 2019-11-07 2020-10-27 撮像装置、その動作方法および電子機器

Publications (1)

Publication Number Publication Date
KR20220093138A true KR20220093138A (ko) 2022-07-05

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KR1020227017275A Pending KR20220093138A (ko) 2019-11-07 2020-10-27 촬상 장치, 그 동작 방법, 및 전자 기기

Country Status (6)

Country Link
US (2) US11917318B2 (https=)
JP (2) JP7663507B2 (https=)
KR (1) KR20220093138A (https=)
CN (1) CN114641987A (https=)
TW (1) TWI879824B (https=)
WO (1) WO2021090110A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023068498A1 (ko) 2021-10-22 2023-04-27 (주) 엘지화학 열가소성 수지 조성물, 이의 제조방법 및 이로부터 제조된 성형품

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11917318B2 (en) * 2019-11-07 2024-02-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operation method thereof, and electronic device
US12610147B2 (en) * 2023-08-08 2026-04-21 Qualcomm Incorporated Automatic exposure control

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5376782A (en) 1992-03-04 1994-12-27 Fuji Xerox Co., Ltd. Image pickup device providing decreased image lag
US5837995A (en) 1996-11-25 1998-11-17 Alan Y. Chow Wavelength-controllable voltage-phase photodiode optoelectronic switch ("opsistor")
KR100677106B1 (ko) * 2002-12-10 2007-02-01 삼성전자주식회사 정보저장매체 및 그 기록/재생방법
US7623171B2 (en) 2003-05-07 2009-11-24 Aptina Imaging Corporation Multiple crawbar switching in charge domain linear operations
KR101770550B1 (ko) 2010-03-12 2017-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
JP5651982B2 (ja) 2010-03-31 2015-01-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2015119018A (ja) * 2013-12-18 2015-06-25 ソニー株式会社 固体撮像素子および電子機器
KR102205702B1 (ko) * 2014-07-30 2021-01-21 삼성전자주식회사 이미지 센서 및 이미지 센서를 구동하는 방법, 그리고 이를 이용한 영상 촬영 장치
WO2016055909A1 (en) * 2014-10-10 2016-04-14 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6407083B2 (ja) 2015-03-30 2018-10-17 キヤノン株式会社 光電変換装置、および、光電変換システム
JP6676468B2 (ja) 2015-06-08 2020-04-08 株式会社半導体エネルギー研究所 撮像装置およびその動作方法、ならびに電子機器
KR20160144314A (ko) 2015-06-08 2016-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치 및 그 동작 방법, 및 전자 기기
US10707260B2 (en) * 2015-08-04 2020-07-07 Artilux, Inc. Circuit for operating a multi-gate VIS/IR photodiode
EP3128342A1 (en) 2015-08-07 2017-02-08 Canon Kabushiki Kaisha Photoelectric conversion device, ranging apparatus, and information processing system
JP2017037938A (ja) 2015-08-07 2017-02-16 キヤノン株式会社 光電変換素子およびそれを用いた光電変換装置、距離検出用センサ並びに情報処理システム
US10373991B2 (en) * 2015-08-19 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operating method thereof, and electronic device
US10205894B2 (en) 2015-09-11 2019-02-12 Canon Kabushiki Kaisha Imaging device and imaging system
JP7007257B2 (ja) 2016-03-18 2022-01-24 株式会社半導体エネルギー研究所 撮像装置、モジュール、および電子機器
US10079990B2 (en) 2016-09-27 2018-09-18 Omnivision Technologies, Inc. Comparator for double ramp analog to digital converter
JP6920652B2 (ja) * 2017-02-03 2021-08-18 パナソニックＩｐマネジメント株式会社 撮像装置
TWI879128B (zh) * 2018-01-23 2025-04-01 日商索尼半導體解決方案公司 光檢測裝置
JP2019176335A (ja) * 2018-03-28 2019-10-10 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
WO2020075009A1 (ja) * 2018-10-11 2020-04-16 株式会社半導体エネルギー研究所 センサ装置および半導体装置
US11917318B2 (en) * 2019-11-07 2024-02-27 Semiconductor Energy Laboratory Co., Ltd. Imaging device, operation method thereof, and electronic device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011119711A (ja) 2009-11-06 2011-06-16 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023068498A1 (ko) 2021-10-22 2023-04-27 (주) 엘지화학 열가소성 수지 조성물, 이의 제조방법 및 이로부터 제조된 성형품

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JPWO2021090110A1 (https=) 2021-05-14
CN114641987A (zh) 2022-06-17
JP7825762B2 (ja) 2026-03-06
JP2025100583A (ja) 2025-07-03
JP7663507B2 (ja) 2025-04-16
WO2021090110A1 (ja) 2021-05-14
US20230247331A1 (en) 2023-08-03
US20240196117A1 (en) 2024-06-13
US12294805B2 (en) 2025-05-06
TW202139689A (zh) 2021-10-16
US11917318B2 (en) 2024-02-27
TWI879824B (zh) 2025-04-11

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