KR20220083780A - 드라이 에칭 방법, 반도체 소자의 제조 방법, 및 클리닝 방법 - Google Patents

드라이 에칭 방법, 반도체 소자의 제조 방법, 및 클리닝 방법 Download PDF

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Publication number
KR20220083780A
KR20220083780A KR1020227016361A KR20227016361A KR20220083780A KR 20220083780 A KR20220083780 A KR 20220083780A KR 1020227016361 A KR1020227016361 A KR 1020227016361A KR 20227016361 A KR20227016361 A KR 20227016361A KR 20220083780 A KR20220083780 A KR 20220083780A
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South Korea
Prior art keywords
etching
gas
etched
dry etching
metal
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Ceased
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KR1020227016361A
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English (en)
Korean (ko)
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카즈마 마츠이
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쇼와 덴코 가부시키가이샤
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Publication of KR20220083780A publication Critical patent/KR20220083780A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H01L21/31122—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
    • B08B9/08—Cleaning containers, e.g. tanks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H01L21/31144—
    • H01L21/32135—
    • H01L21/32139—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H10F71/1385—Etching transparent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2209/00—Details of machines or methods for cleaning hollow articles
    • B08B2209/08—Details of machines or methods for cleaning containers, e.g. tanks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1020227016361A 2020-02-26 2021-02-08 드라이 에칭 방법, 반도체 소자의 제조 방법, 및 클리닝 방법 Ceased KR20220083780A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-030984 2020-02-26
JP2020030984 2020-02-26
PCT/JP2021/004579 WO2021171986A1 (ja) 2020-02-26 2021-02-08 ドライエッチング方法、半導体素子の製造方法、及びクリーニング方法

Publications (1)

Publication Number Publication Date
KR20220083780A true KR20220083780A (ko) 2022-06-20

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KR1020227016361A Ceased KR20220083780A (ko) 2020-02-26 2021-02-08 드라이 에칭 방법, 반도체 소자의 제조 방법, 및 클리닝 방법

Country Status (8)

Country Link
US (1) US12406854B2 (https=)
EP (1) EP4113582A4 (https=)
JP (2) JP7729326B2 (https=)
KR (1) KR20220083780A (https=)
CN (1) CN113906540A (https=)
IL (1) IL292568A (https=)
TW (1) TWI765581B (https=)
WO (1) WO2021171986A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240074694A (ko) * 2022-11-21 2024-05-28 고려대학교 세종산학협력단 활성화된 프로톤 어시스트 플라즈마 식각을 포함하는 박막공정 방법 및 장치
WO2024112078A1 (ko) * 2022-11-21 2024-05-30 고려대학교 세종산학협력단 활성화된 프로톤 어시스트 플라즈마 식각을 포함하는 박막공정 방법 및 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267241B1 (ko) 1997-11-14 2001-01-15 윤종용 냉장고의도어힌지장치
KR100536312B1 (ko) 2002-03-08 2005-12-12 세이코 엡슨 가부시키가이샤 컬러 필터 기판 및 그 제조 방법과, 전기 광학 장치 및 그 제조 방법과 전자기기

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL275192A (https=) 1961-06-30
US4498953A (en) * 1983-07-27 1985-02-12 At&T Bell Laboratories Etching techniques
US5565038A (en) 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
EP0964438B1 (en) * 1996-10-30 2007-01-10 Japan as represented by Director-General, Agency of Industrial Science and Technology Dry etching method
KR100510158B1 (ko) * 1996-10-30 2005-08-25 고교기쥬쯔잉초가다이효스루니혼고쿠 드라이 에칭용 가스 조성물 및 드라이 에칭 방법
JP2000188285A (ja) * 1998-10-13 2000-07-04 Sony Corp エッチング方法および結晶性評価方法並びに半導体装置の製造方法
US6207570B1 (en) * 1999-08-20 2001-03-27 Lucent Technologies, Inc. Method of manufacturing integrated circuit devices
JP2001267241A (ja) 2000-03-10 2001-09-28 L'air Liquide クリーニング方法及び装置並びにエッチング方法及び装置
US20060226122A1 (en) 2005-04-08 2006-10-12 Wojtczak William A Selective wet etching of metal nitrides
SG171606A1 (en) 2006-04-26 2011-06-29 Advanced Tech Materials Cleaning of semiconductor processing systems
JP5204959B2 (ja) * 2006-06-26 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP6210039B2 (ja) * 2014-09-24 2017-10-11 セントラル硝子株式会社 付着物の除去方法及びドライエッチング方法
JP6777851B2 (ja) * 2015-09-15 2020-10-28 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
WO2017175643A1 (ja) 2016-04-05 2017-10-12 関東電化工業株式会社 半導体製造装置のクリーニング方法
JP7053991B2 (ja) * 2017-03-28 2022-04-13 セントラル硝子株式会社 ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法
US10043674B1 (en) * 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10497573B2 (en) * 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100267241B1 (ko) 1997-11-14 2001-01-15 윤종용 냉장고의도어힌지장치
KR100536312B1 (ko) 2002-03-08 2005-12-12 세이코 엡슨 가부시키가이샤 컬러 필터 기판 및 그 제조 방법과, 전기 광학 장치 및 그 제조 방법과 전자기기

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240074694A (ko) * 2022-11-21 2024-05-28 고려대학교 세종산학협력단 활성화된 프로톤 어시스트 플라즈마 식각을 포함하는 박막공정 방법 및 장치
WO2024112078A1 (ko) * 2022-11-21 2024-05-30 고려대학교 세종산학협력단 활성화된 프로톤 어시스트 플라즈마 식각을 포함하는 박막공정 방법 및 장치

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Publication number Publication date
JP2025123316A (ja) 2025-08-22
US20220230888A1 (en) 2022-07-21
JP7729326B2 (ja) 2025-08-26
EP4113582A4 (en) 2023-10-11
CN113906540A (zh) 2022-01-07
TWI765581B (zh) 2022-05-21
IL292568A (en) 2022-06-01
US12406854B2 (en) 2025-09-02
TW202146628A (zh) 2021-12-16
WO2021171986A1 (ja) 2021-09-02
JPWO2021171986A1 (https=) 2021-09-02
EP4113582A1 (en) 2023-01-04

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