KR20220036109A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR20220036109A
KR20220036109A KR1020200118300A KR20200118300A KR20220036109A KR 20220036109 A KR20220036109 A KR 20220036109A KR 1020200118300 A KR1020200118300 A KR 1020200118300A KR 20200118300 A KR20200118300 A KR 20200118300A KR 20220036109 A KR20220036109 A KR 20220036109A
Authority
KR
South Korea
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Application number
KR1020200118300A
Other languages
English (en)
Inventor
김효섭
김근남
김만복
김수정
박철권
전승배
황유상
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020200118300A priority Critical patent/KR20220036109A/ko
Priority to US17/229,942 priority patent/US11706910B2/en
Priority to TW110115457A priority patent/TWI788828B/zh
Priority to EP21176527.6A priority patent/EP3968376A1/en
Priority to CN202110658864.2A priority patent/CN114188324A/zh
Publication of KR20220036109A publication Critical patent/KR20220036109A/ko
Priority to US18/327,920 priority patent/US20230309293A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Recrystallisation Techniques (AREA)
KR1020200118300A 2020-09-15 2020-09-15 반도체 장치 KR20220036109A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020200118300A KR20220036109A (ko) 2020-09-15 2020-09-15 반도체 장치
US17/229,942 US11706910B2 (en) 2020-09-15 2021-04-14 Semiconductor devices
TW110115457A TWI788828B (zh) 2020-09-15 2021-04-29 半導體元件
EP21176527.6A EP3968376A1 (en) 2020-09-15 2021-05-28 Semiconductor devices
CN202110658864.2A CN114188324A (zh) 2020-09-15 2021-06-15 半导体装置
US18/327,920 US20230309293A1 (en) 2020-09-15 2023-06-02 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020200118300A KR20220036109A (ko) 2020-09-15 2020-09-15 반도체 장치

Publications (1)

Publication Number Publication Date
KR20220036109A true KR20220036109A (ko) 2022-03-22

Family

ID=76197245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020200118300A KR20220036109A (ko) 2020-09-15 2020-09-15 반도체 장치

Country Status (5)

Country Link
US (2) US11706910B2 (ko)
EP (1) EP3968376A1 (ko)
KR (1) KR20220036109A (ko)
CN (1) CN114188324A (ko)
TW (1) TWI788828B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11882690B2 (en) 2022-06-10 2024-01-23 Nanya Technology Corporation Semiconductor structure having tapered bit line
US11895829B2 (en) 2022-06-10 2024-02-06 Nanya Technology Corporation Method of manufacturing semiconductor structure having tapered bit line
US20240097002A1 (en) * 2022-09-18 2024-03-21 Nanya Technology Corporation Method of forming semiconductor structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101883656B1 (ko) 2012-03-30 2018-07-31 삼성전자주식회사 활성영역과의 접촉면적이 확대된 콘택을 포함하는 반도체 소자 및 그 제조방법
KR102066584B1 (ko) 2013-03-14 2020-01-15 삼성전자주식회사 배선 구조물, 배선 구조물의 제조 방법 및 배선 구조물을 포함하는 반도체 장치의 제조 방법
KR102161800B1 (ko) * 2013-12-06 2020-10-06 삼성전자주식회사 반도체 소자 및 이의의 제조 방법
KR102152798B1 (ko) * 2014-03-05 2020-09-07 에스케이하이닉스 주식회사 라인형 에어갭을 구비한 반도체장치 및 그 제조 방법
KR102168172B1 (ko) 2014-05-23 2020-10-20 삼성전자주식회사 반도체 소자의 제조 방법
JP2016009801A (ja) 2014-06-25 2016-01-18 マイクロン テクノロジー， インク． 半導体装置の製造方法
KR102238951B1 (ko) 2014-07-25 2021-04-12 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
KR102321390B1 (ko) 2014-12-18 2021-11-04 에스케이하이닉스 주식회사 에어갭을 구비한 반도체장치 및 그 제조 방법
KR102321868B1 (ko) 2017-04-03 2021-11-08 삼성전자주식회사 반도체 메모리 장치
KR20180129387A (ko) * 2017-05-26 2018-12-05 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
KR102359266B1 (ko) * 2017-08-31 2022-02-07 삼성전자주식회사 반도체 소자
KR102630510B1 (ko) * 2017-09-19 2024-01-30 삼성전자주식회사 반도체 메모리 장치 및 이의 제조 방법
KR102444707B1 (ko) 2018-03-26 2022-09-19 에스케이하이닉스 주식회사 극저유전율스페이서를 구비한 반도체장치 및 그 제조 방법

Also Published As

Publication number Publication date
EP3968376A1 (en) 2022-03-16
US20230309293A1 (en) 2023-09-28
TWI788828B (zh) 2023-01-01
TW202213650A (zh) 2022-04-01
US11706910B2 (en) 2023-07-18
CN114188324A (zh) 2022-03-15
US20220085026A1 (en) 2022-03-17

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