KR20220024083A - 염기성 물질을 함유하는 수친화성이 높은 연마입자를 이용한 연마용 조성물 - Google Patents

염기성 물질을 함유하는 수친화성이 높은 연마입자를 이용한 연마용 조성물 Download PDF

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Publication number
KR20220024083A
KR20220024083A KR1020217041400A KR20217041400A KR20220024083A KR 20220024083 A KR20220024083 A KR 20220024083A KR 1020217041400 A KR1020217041400 A KR 1020217041400A KR 20217041400 A KR20217041400 A KR 20217041400A KR 20220024083 A KR20220024083 A KR 20220024083A
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KR
South Korea
Prior art keywords
polishing composition
organic compound
containing organic
basic nitrogen
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020217041400A
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English (en)
Korean (ko)
Inventor
시게루 미츠이
에이이치로 이시미즈
토루 니시무라
와타루 오모리
Original Assignee
닛산 가가쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 닛산 가가쿠 가부시키가이샤 filed Critical 닛산 가가쿠 가부시키가이샤
Publication of KR20220024083A publication Critical patent/KR20220024083A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H01L21/304—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020217041400A 2019-06-27 2020-06-26 염기성 물질을 함유하는 수친화성이 높은 연마입자를 이용한 연마용 조성물 Ceased KR20220024083A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-119362 2019-06-27
JP2019119362 2019-06-27
PCT/JP2020/025284 WO2020262628A1 (ja) 2019-06-27 2020-06-26 塩基性物質を含有する水親和性の高い研磨粒子を用いた研磨用組成物

Publications (1)

Publication Number Publication Date
KR20220024083A true KR20220024083A (ko) 2022-03-03

Family

ID=74060172

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217041400A Ceased KR20220024083A (ko) 2019-06-27 2020-06-26 염기성 물질을 함유하는 수친화성이 높은 연마입자를 이용한 연마용 조성물

Country Status (6)

Country Link
US (1) US20220228031A1 (https=)
JP (1) JPWO2020262628A1 (https=)
KR (1) KR20220024083A (https=)
CN (1) CN114026195A (https=)
TW (1) TWI848137B (https=)
WO (1) WO2020262628A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210079263A1 (en) * 2019-09-17 2021-03-18 Fujimi Incorporated High molecular weight polyvinyl pyrrolidone for low-k removal rate suppresion
CN112978735B (zh) * 2021-02-04 2022-04-12 石家庄优士科电子科技有限公司 一种二氧化硅胶粒及包含其的分散液和制备方法
CN113500516A (zh) * 2021-07-13 2021-10-15 西安奕斯伟硅片技术有限公司 一种研磨装置的清洗方法及系统
KR20250060247A (ko) * 2022-09-07 2025-05-07 에이지씨 가부시키가이샤 연마제, 연마제용 첨가액 및 연마 방법
CN121285611A (zh) * 2023-09-27 2026-01-06 日产化学株式会社 保存稳定性优异的研磨用组合物及其制造方法
WO2025069272A1 (ja) * 2023-09-27 2025-04-03 日産化学株式会社 保存安定性に優れた研磨用組成物及びその製造方法
WO2025154728A1 (ja) * 2024-01-19 2025-07-24 富士フイルム株式会社 半導体基板用洗浄液、被対象物の洗浄方法、半導体デバイスの製造方法
WO2025254017A1 (ja) * 2024-06-04 2025-12-11 Ａｇｃ株式会社 研磨剤、研磨剤用添加液、研磨方法、及び、半導体部品の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152151A1 (ja) 2014-03-31 2015-10-08 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP2017117894A (ja) 2015-12-22 2017-06-29 日立化成株式会社 研磨液、研磨方法、半導体基板及び電子機器
WO2018012174A1 (ja) 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
WO2018116890A1 (ja) 2016-12-22 2018-06-28 ニッタ・ハース株式会社 研磨用組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
JP2010161201A (ja) * 2009-01-08 2010-07-22 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の製造方法
JP6542766B2 (ja) * 2013-10-23 2019-07-10 ドンジン セミケム カンパニー リミテッドＤｏｎｇｊｉｎ Ｓｅｍｉｃｈｅｍ Ｃｏ．， Ｌｔｄ． 金属膜研磨スラリー組成物、及びこれを利用した金属膜研磨時に発生するスクラッチの減少方法
WO2015200678A1 (en) * 2014-06-25 2015-12-30 Cabot Microelectronics Corporation Colloidal silica chemical-mechanical polishing concentrate
JP2016213216A (ja) * 2015-04-28 2016-12-15 花王株式会社 シリコンウェーハ用研磨液組成物
KR20190017815A (ko) * 2016-06-09 2019-02-20 히타치가세이가부시끼가이샤 Cmp용 연마액 및 연마 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152151A1 (ja) 2014-03-31 2015-10-08 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
JP2017117894A (ja) 2015-12-22 2017-06-29 日立化成株式会社 研磨液、研磨方法、半導体基板及び電子機器
WO2018012174A1 (ja) 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法
WO2018116890A1 (ja) 2016-12-22 2018-06-28 ニッタ・ハース株式会社 研磨用組成物

Also Published As

Publication number Publication date
CN114026195A (zh) 2022-02-08
JPWO2020262628A1 (https=) 2020-12-30
US20220228031A1 (en) 2022-07-21
WO2020262628A1 (ja) 2020-12-30
TWI848137B (zh) 2024-07-11
TW202129733A (zh) 2021-08-01

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