TWI848137B - 使用含有鹼性物質之水親和性高的研磨粒子之研磨用組成物 - Google Patents

使用含有鹼性物質之水親和性高的研磨粒子之研磨用組成物 Download PDF

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Publication number
TWI848137B
TWI848137B TW109121837A TW109121837A TWI848137B TW I848137 B TWI848137 B TW I848137B TW 109121837 A TW109121837 A TW 109121837A TW 109121837 A TW109121837 A TW 109121837A TW I848137 B TWI848137 B TW I848137B
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TW
Taiwan
Prior art keywords
polishing composition
organic compound
containing organic
silicon oxide
polishing
Prior art date
Application number
TW109121837A
Other languages
English (en)
Chinese (zh)
Other versions
TW202129733A (zh
Inventor
三井滋
石水英一郎
西村透
大森恒
Original Assignee
日商日產化學股份有限公司
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Publication date
Application filed by 日商日產化學股份有限公司 filed Critical 日商日產化學股份有限公司
Publication of TW202129733A publication Critical patent/TW202129733A/zh
Application granted granted Critical
Publication of TWI848137B publication Critical patent/TWI848137B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW109121837A 2019-06-27 2020-06-29 使用含有鹼性物質之水親和性高的研磨粒子之研磨用組成物 TWI848137B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019119362 2019-06-27
JP2019-119362 2019-06-27

Publications (2)

Publication Number Publication Date
TW202129733A TW202129733A (zh) 2021-08-01
TWI848137B true TWI848137B (zh) 2024-07-11

Family

ID=74060172

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109121837A TWI848137B (zh) 2019-06-27 2020-06-29 使用含有鹼性物質之水親和性高的研磨粒子之研磨用組成物

Country Status (6)

Country Link
US (1) US20220228031A1 (https=)
JP (1) JPWO2020262628A1 (https=)
KR (1) KR20220024083A (https=)
CN (1) CN114026195A (https=)
TW (1) TWI848137B (https=)
WO (1) WO2020262628A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210079263A1 (en) * 2019-09-17 2021-03-18 Fujimi Incorporated High molecular weight polyvinyl pyrrolidone for low-k removal rate suppresion
CN112978735B (zh) * 2021-02-04 2022-04-12 石家庄优士科电子科技有限公司 一种二氧化硅胶粒及包含其的分散液和制备方法
CN113500516A (zh) * 2021-07-13 2021-10-15 西安奕斯伟硅片技术有限公司 一种研磨装置的清洗方法及系统
KR20250060247A (ko) * 2022-09-07 2025-05-07 에이지씨 가부시키가이샤 연마제, 연마제용 첨가액 및 연마 방법
CN121285611A (zh) * 2023-09-27 2026-01-06 日产化学株式会社 保存稳定性优异的研磨用组合物及其制造方法
WO2025069272A1 (ja) * 2023-09-27 2025-04-03 日産化学株式会社 保存安定性に優れた研磨用組成物及びその製造方法
WO2025154728A1 (ja) * 2024-01-19 2025-07-24 富士フイルム株式会社 半導体基板用洗浄液、被対象物の洗浄方法、半導体デバイスの製造方法
WO2025254017A1 (ja) * 2024-06-04 2025-12-11 Ａｇｃ株式会社 研磨剤、研磨剤用添加液、研磨方法、及び、半導体部品の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105658757A (zh) * 2013-10-23 2016-06-08 东进世美肯株式会社 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法
WO2018012174A1 (ja) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG54606A1 (en) * 1996-12-05 1998-11-16 Fujimi Inc Polishing composition
JP2010161201A (ja) * 2009-01-08 2010-07-22 Jsr Corp 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の製造方法
JP6506913B2 (ja) 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
WO2015200678A1 (en) * 2014-06-25 2015-12-30 Cabot Microelectronics Corporation Colloidal silica chemical-mechanical polishing concentrate
JP2016213216A (ja) * 2015-04-28 2016-12-15 花王株式会社 シリコンウェーハ用研磨液組成物
JP6589622B2 (ja) 2015-12-22 2019-10-16 日立化成株式会社 研磨液、研磨方法、半導体基板及び電子機器
KR20190017815A (ko) * 2016-06-09 2019-02-20 히타치가세이가부시끼가이샤 Cmp용 연마액 및 연마 방법
JP7061966B2 (ja) * 2016-12-22 2022-05-02 ニッタ・デュポン株式会社 研磨用組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105658757A (zh) * 2013-10-23 2016-06-08 东进世美肯株式会社 金属膜抛光浆料组合物及使用其减少金属膜抛光时产生的划痕的方法
WO2018012174A1 (ja) * 2016-07-15 2018-01-18 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法および研磨方法

Also Published As

Publication number Publication date
CN114026195A (zh) 2022-02-08
JPWO2020262628A1 (https=) 2020-12-30
US20220228031A1 (en) 2022-07-21
WO2020262628A1 (ja) 2020-12-30
KR20220024083A (ko) 2022-03-03
TW202129733A (zh) 2021-08-01

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