KR20220007139A - 반도체 재료를 처리하기 위한 방법 및 광학 시스템(mehtod and optical system for processing a semiconductor material) - Google Patents

반도체 재료를 처리하기 위한 방법 및 광학 시스템(mehtod and optical system for processing a semiconductor material) Download PDF

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Publication number
KR20220007139A
KR20220007139A KR1020217040413A KR20217040413A KR20220007139A KR 20220007139 A KR20220007139 A KR 20220007139A KR 1020217040413 A KR1020217040413 A KR 1020217040413A KR 20217040413 A KR20217040413 A KR 20217040413A KR 20220007139 A KR20220007139 A KR 20220007139A
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KR
South Korea
Prior art keywords
laser
pulse
laser pulse
semiconductor material
laser beam
Prior art date
Application number
KR1020217040413A
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English (en)
Korean (ko)
Inventor
세바스찬 게버트
한스-주에르겐 카러트
Original Assignee
이노바벤트 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이노바벤트 게엠베하 filed Critical 이노바벤트 게엠베하
Publication of KR20220007139A publication Critical patent/KR20220007139A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
KR1020217040413A 2019-05-09 2020-04-28 반도체 재료를 처리하기 위한 방법 및 광학 시스템(mehtod and optical system for processing a semiconductor material) KR20220007139A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102019112141.8 2019-05-09
DE102019112141.8A DE102019112141A1 (de) 2019-05-09 2019-05-09 Verfahren und optisches System zur Bearbeitung eines Halbleitermaterials
PCT/EP2020/061677 WO2020225016A1 (de) 2019-05-09 2020-04-28 Verfahren und optisches system zur bearbeitung eines halbleitermaterials

Publications (1)

Publication Number Publication Date
KR20220007139A true KR20220007139A (ko) 2022-01-18

Family

ID=70476219

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217040413A KR20220007139A (ko) 2019-05-09 2020-04-28 반도체 재료를 처리하기 위한 방법 및 광학 시스템(mehtod and optical system for processing a semiconductor material)

Country Status (5)

Country Link
JP (1) JP2022533566A (zh)
KR (1) KR20220007139A (zh)
CN (1) CN113811981A (zh)
DE (1) DE102019112141A1 (zh)
WO (1) WO2020225016A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021133903A1 (de) * 2021-12-20 2023-06-22 Trumpf Laser- Und Systemtechnik Gmbh Vorrichtung zum Erzeugen einer definierten Laserlinie auf einer Arbeitsebene

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3829728A1 (de) 1987-09-02 1989-03-23 Lambda Physik Forschung Verfahren und vorrichtung zum homogenisieren der intensitaetsverteilung im querschnit eines laserstrahls
DE4220705C2 (de) 1992-06-24 2003-03-13 Lambda Physik Ag Vorrichtung zum Aufteilen eines Lichtstrahles in homogene Teilstrahlen
DE10225674B4 (de) 2002-06-10 2013-03-28 Coherent Gmbh Linsensystem zum Homogenisieren von Laserstrahlung
US8374206B2 (en) * 2008-03-31 2013-02-12 Electro Scientific Industries, Inc. Combining multiple laser beams to form high repetition rate, high average power polarized laser beam
JP4858499B2 (ja) * 2008-07-01 2012-01-18 ソニー株式会社 レーザ光源装置及びこれを用いたレーザ照射装置
DE102012007601A1 (de) 2012-04-16 2013-10-17 Innovavent Gmbh Optisches System für eine Anlage zur Bearbeitung von Dünnfilmschichten
JP6706155B2 (ja) * 2016-06-15 2020-06-03 株式会社日本製鋼所 多結晶半導体膜の製造方法、レーザアニール装置、薄膜トランジスタ、およびディスプレイ

Also Published As

Publication number Publication date
DE102019112141A1 (de) 2020-11-12
WO2020225016A1 (de) 2020-11-12
JP2022533566A (ja) 2022-07-25
CN113811981A (zh) 2021-12-17

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