KR20210154971A - 보론 타입 첨가제를 포함한 50 nm 이하의 라인-간격 치수를 갖는 패터닝된 재료의 처리시 패턴 붕괴를 회피하는 조성물 - Google Patents

보론 타입 첨가제를 포함한 50 nm 이하의 라인-간격 치수를 갖는 패터닝된 재료의 처리시 패턴 붕괴를 회피하는 조성물 Download PDF

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KR20210154971A
KR20210154971A KR1020217032642A KR20217032642A KR20210154971A KR 20210154971 A KR20210154971 A KR 20210154971A KR 1020217032642 A KR1020217032642 A KR 1020217032642A KR 20217032642 A KR20217032642 A KR 20217032642A KR 20210154971 A KR20210154971 A KR 20210154971A
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South Korea
Prior art keywords
patterned
material layer
less
organic solvent
aqueous composition
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English (en)
Korean (ko)
Inventor
스칠라르트 크지호니
다니엘 뢰플러
마르켈 브릴
프랑크 피룽
로타르 엥겔브레히트
마이케 베르겔러
파트릭 빌케
예니 부르크
보로디미르 보이코
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바스프 에스이
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Publication of KR20210154971A publication Critical patent/KR20210154971A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • C11D11/0047—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/166—Organic compounds containing borium
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020217032642A 2019-04-16 2020-04-03 보론 타입 첨가제를 포함한 50 nm 이하의 라인-간격 치수를 갖는 패터닝된 재료의 처리시 패턴 붕괴를 회피하는 조성물 Withdrawn KR20210154971A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP19169513.9 2019-04-16
EP19169513 2019-04-16
PCT/EP2020/059580 WO2020212173A1 (en) 2019-04-16 2020-04-03 Composition for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below comprising a boron-type additive

Publications (1)

Publication Number Publication Date
KR20210154971A true KR20210154971A (ko) 2021-12-21

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ID=66217771

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217032642A Withdrawn KR20210154971A (ko) 2019-04-16 2020-04-03 보론 타입 첨가제를 포함한 50 nm 이하의 라인-간격 치수를 갖는 패터닝된 재료의 처리시 패턴 붕괴를 회피하는 조성물

Country Status (8)

Country Link
US (1) US20220187712A1 (https=)
EP (1) EP3956729A1 (https=)
JP (1) JP2022529066A (https=)
KR (1) KR20210154971A (https=)
CN (1) CN113574460A (https=)
IL (1) IL287201A (https=)
TW (1) TW202104572A (https=)
WO (1) WO2020212173A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525388A (ja) * 2018-05-25 2021-09-24 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法
US12518960B2 (en) * 2020-07-09 2026-01-06 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below
KR20250109768A (ko) * 2023-01-10 2025-07-17 후지필름 가부시키가이샤 약액, 약액 수용체

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2434118A1 (fr) * 1978-06-19 1980-03-21 Charbonnages Ste Chimique Solutions d'anhydride borique et leur utilisation comme durcisseurs de resols
KR20080110984A (ko) * 2005-12-30 2008-12-22 아나코르 파마슈티칼스 인코포레이티드 보론함유 소분자
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
WO2012027667A2 (en) 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US8828144B2 (en) * 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
MY161218A (en) * 2011-01-25 2017-04-14 Basf Se Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
JP5681560B2 (ja) * 2011-05-17 2015-03-11 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置
JP5806645B2 (ja) * 2012-06-12 2015-11-10 株式会社東芝 基板の乾燥方法、電子装置の製造方法及び基板の乾燥装置
EP3341352A4 (en) * 2015-09-24 2019-08-28 Board of Trustees of Michigan State University BOR-BASED CYCLOADDITION CATALYSTS AND PROCESS FOR PREPARING BIOBASED TEREPHTHALIC ACID, ISOPHTHALIC ACID AND POLY (ETHYLENE TEREPHTHALATE)
WO2019086374A1 (en) 2017-11-03 2019-05-09 Basf Se Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
CN108565124B (zh) * 2018-03-27 2019-12-31 天津理工大学 一种基于掺硼石墨烯/掺硼金刚石复合电极的钠离子超级电容器的制备方法
JP7077184B2 (ja) * 2018-08-30 2022-05-30 キオクシア株式会社 基板処理方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
EP3956729A1 (en) 2022-02-23
US20220187712A1 (en) 2022-06-16
IL287201A (en) 2021-12-01
TW202104572A (zh) 2021-02-01
CN113574460A (zh) 2021-10-29
JP2022529066A (ja) 2022-06-16
WO2020212173A1 (en) 2020-10-22

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