TW202104572A - 用於避免處理線距尺寸為50 nm或更小的經圖案化材料時圖案塌陷的包含硼型添加劑的組合物 - Google Patents

用於避免處理線距尺寸為50 nm或更小的經圖案化材料時圖案塌陷的包含硼型添加劑的組合物 Download PDF

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Publication number
TW202104572A
TW202104572A TW109112484A TW109112484A TW202104572A TW 202104572 A TW202104572 A TW 202104572A TW 109112484 A TW109112484 A TW 109112484A TW 109112484 A TW109112484 A TW 109112484A TW 202104572 A TW202104572 A TW 202104572A
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TW
Taiwan
Prior art keywords
composition
patterned
organic solvent
composition according
material layer
Prior art date
Application number
TW109112484A
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English (en)
Chinese (zh)
Inventor
席拉 喜宏尼
丹尼爾 羅福勒
馬歇爾 布瑞爾
法蘭克 皮羅恩格
洛薩 安捷爾布奇特
梅克 貝爾格勒
派翠克 維爾克
耶尼 布克
芙蘿狄米爾 波依科
Original Assignee
德商巴斯夫歐洲公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商巴斯夫歐洲公司 filed Critical 德商巴斯夫歐洲公司
Publication of TW202104572A publication Critical patent/TW202104572A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B81C1/00928—Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/166—Organic compounds containing borium
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW109112484A 2019-04-16 2020-04-14 用於避免處理線距尺寸為50 nm或更小的經圖案化材料時圖案塌陷的包含硼型添加劑的組合物 TW202104572A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP19169513.9 2019-04-16
EP19169513 2019-04-16

Publications (1)

Publication Number Publication Date
TW202104572A true TW202104572A (zh) 2021-02-01

Family

ID=66217771

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109112484A TW202104572A (zh) 2019-04-16 2020-04-14 用於避免處理線距尺寸為50 nm或更小的經圖案化材料時圖案塌陷的包含硼型添加劑的組合物

Country Status (8)

Country Link
US (1) US20220187712A1 (https=)
EP (1) EP3956729A1 (https=)
JP (1) JP2022529066A (https=)
KR (1) KR20210154971A (https=)
CN (1) CN113574460A (https=)
IL (1) IL287201A (https=)
TW (1) TW202104572A (https=)
WO (1) WO2020212173A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230274930A1 (en) * 2020-07-09 2023-08-31 Basf Se Composition Comprising a Siloxane and an Alkane for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021525388A (ja) * 2018-05-25 2021-09-24 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ ５０ｎｍ以下のライン間寸法を有するパターン化材料を処理したときのパターン倒壊を回避するための溶媒混合物を含む組成物を使用する方法
KR20250109768A (ko) * 2023-01-10 2025-07-17 후지필름 가부시키가이샤 약액, 약액 수용체

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FR2434118A1 (fr) * 1978-06-19 1980-03-21 Charbonnages Ste Chimique Solutions d'anhydride borique et leur utilisation comme durcisseurs de resols
KR20080110984A (ko) * 2005-12-30 2008-12-22 아나코르 파마슈티칼스 인코포레이티드 보론함유 소분자
US20080299487A1 (en) 2007-05-31 2008-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography material and lithography process
WO2012027667A2 (en) 2010-08-27 2012-03-01 Advanced Technology Materials, Inc. Method for preventing the collapse of high aspect ratio structures during drying
US8828144B2 (en) * 2010-12-28 2014-09-09 Central Grass Company, Limited Process for cleaning wafers
MY161218A (en) * 2011-01-25 2017-04-14 Basf Se Use of surfactants having at least three short-chain perfluorinated groups rf for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
JP5681560B2 (ja) * 2011-05-17 2015-03-11 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置
JP5806645B2 (ja) * 2012-06-12 2015-11-10 株式会社東芝 基板の乾燥方法、電子装置の製造方法及び基板の乾燥装置
EP3341352A4 (en) * 2015-09-24 2019-08-28 Board of Trustees of Michigan State University BOR-BASED CYCLOADDITION CATALYSTS AND PROCESS FOR PREPARING BIOBASED TEREPHTHALIC ACID, ISOPHTHALIC ACID AND POLY (ETHYLENE TEREPHTHALATE)
WO2019086374A1 (en) 2017-11-03 2019-05-09 Basf Se Use of compositions comprising a siloxane-type additive for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below
CN108565124B (zh) * 2018-03-27 2019-12-31 天津理工大学 一种基于掺硼石墨烯/掺硼金刚石复合电极的钠离子超级电容器的制备方法
JP7077184B2 (ja) * 2018-08-30 2022-05-30 キオクシア株式会社 基板処理方法及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230274930A1 (en) * 2020-07-09 2023-08-31 Basf Se Composition Comprising a Siloxane and an Alkane for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below
US12518960B2 (en) * 2020-07-09 2026-01-06 Basf Se Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 NM or below

Also Published As

Publication number Publication date
EP3956729A1 (en) 2022-02-23
US20220187712A1 (en) 2022-06-16
IL287201A (en) 2021-12-01
CN113574460A (zh) 2021-10-29
JP2022529066A (ja) 2022-06-16
KR20210154971A (ko) 2021-12-21
WO2020212173A1 (en) 2020-10-22

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