KR20210146908A - Manufacturing method of semiconductor device having dolmen structure, manufacturing method of support piece, and laminated film for forming support piece - Google Patents

Abstract

a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, and a second chip supported by the plurality of support pieces and disposed so as to cover the first chip A method for manufacturing a support piece used in a manufacturing process of a semiconductor device having a dolmen structure comprising: (A) a step of preparing a laminated film comprising a base film, an adhesive layer, and a film for forming a support piece in this order and (B) a step of forming a plurality of support pieces on the surface of the pressure-sensitive adhesive layer by separating the film for forming a support piece into pieces; (C) a step of picking up the support pieces from the pressure-sensitive adhesive layer; The manufacturing method of the support piece whose shear viscosity in 120 degreeC of a film for use is 4000 Pa*s or more is disclosed.

Description

Manufacturing method of semiconductor device having dolmen structure, manufacturing method of support piece, and laminated film for forming support piece

The present disclosure provides a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, supported by the plurality of support pieces and arranged to cover the first chip The present invention relates to a method of manufacturing a semiconductor device having a dolmen structure including a second chip. Moreover, this indication relates to the manufacturing method of a support piece, and laminated|multilayer film for support piece formation. In addition, a dolmen is a type of stone tomb, and includes a plurality of pilasters and a plate-shaped rock placed thereon. In a semiconductor device having a dolmen structure, the support piece corresponds to a "stallite" and the second chip corresponds to a "plate-shaped rock".

In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed are required. As an aspect of a semiconductor device, a structure in which a semiconductor chip is stacked on a controller chip disposed on a substrate is attracting attention. For example, Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported by a support member on the controller die. The semiconductor assembly 100 illustrated in FIG. 1A of Patent Document 1 may have a dolmen structure. That is, the semiconductor assembly 100 includes a package substrate 102 , a controller die 103 disposed on a surface thereof, memory dies 106a and 106b disposed above the controller die 103 , and a memory die. Support members 130a and 130b for supporting the 106a are provided.

Patent Document 1: Japanese Patent Publication No. 2017-515306

Patent Document 1 discloses that a semiconductor material such as silicon can be used as a support member (support piece), and more specifically, a fragment of a semiconductor material obtained by dicing a semiconductor wafer can be used. (See [0012], [0014] and FIG. 2 of Patent Document 1). In order to manufacture the support piece for dolmen structures using a semiconductor chip, the following each process is required similarly to manufacture of a normal semiconductor chip, for example.

(1) The step of pasting the backgrind tape on the semiconductor wafer

(2) Backgrinding the semiconductor wafer

(3) A step of affixing a film having an adhesive layer and an adhesive layer (a dicing and die-bonding integrated film) to the dicing ring and the backgrinded semiconductor wafer disposed therein

(4) Step of peeling the backgrind tape from the semiconductor wafer

(5) The process of dividing the semiconductor wafer into pieces

(6) A step of picking up a support piece made of a laminate of a semiconductor chip and an adhesive piece from the adhesive layer

The present disclosure provides a method for manufacturing a semiconductor device capable of simplifying a process of manufacturing a support piece in a manufacturing process of a semiconductor device having a dolmen structure, and further stably supporting stacked semiconductor chips. Moreover, this indication provides the manufacturing method of a support piece, and laminated|multilayer film for support piece formation.

One aspect of the present disclosure includes a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, and the first chip supported by the plurality of support pieces A method of manufacturing a semiconductor device having a dolmen structure including a second chip disposed to cover the semiconductor device. The manufacturing method of a semiconductor device includes the following processes.

(A) Process of preparing laminated|multilayer film provided with a base film, an adhesion layer, and the film for support piece formation in this order

(B) The process of forming a some support piece on the surface of an adhesion layer by separating the film for support piece formation into pieces

(C) The step of picking up the support piece from the adhesive layer

(D) Step of arranging the first chip on the substrate

(E) a step of arranging a plurality of support pieces on a substrate and around the first chip

(F) Step of preparing a chip with an adhesive piece comprising a second chip and an adhesive piece provided on one surface of the second chip

(G) Step of constructing a dolmen structure by arranging chips with adhesive pieces on the surfaces of the plurality of support pieces

According to the manufacturing method of the semiconductor device which concerns on an aspect of this indication, a support piece can be obtained by separating the film for support piece formation into pieces. Thereby, compared with the conventional manufacturing method using the fragment of the semiconductor material obtained by dicing a semiconductor wafer as a support piece, the process of manufacturing a support piece can be simplified. That is, in contrast to the conventionally required steps of (1) to (6), the film for forming a support piece does not contain a semiconductor wafer, so (1), (2) related to the backgrind of a semiconductor wafer ) and (4) may be omitted. Moreover, compared with a resin material, since expensive semiconductor wafer is not used, cost can also be reduced.

Moreover, the shear viscosity in 120 degreeC of the film for support piece formation is 4000 Pa*s or more. When the shear viscosity in 120 degreeC of the film for support piece formation is 4000 Pa*s or more, the grade of the flow deformation of the film for support piece formation becomes low, As a result, the semiconductor chip laminated|stacked can be supported stably. The film for support piece formation may contain the thermosetting resin layer.

(A) Pressure-sensitive type may be sufficient as the adhesion layer of laminated|multilayer film prepared at a process, and an ultraviolet curing type may be sufficient as it. That is, the adhesive layer may or may not be cured by irradiation with ultraviolet rays, and in other words, may or may not contain a resin having a carbon-carbon double bond having photoreactivity. Further, the pressure-sensitive adhesive layer may contain a resin having a carbon-carbon double bond having photoreactivity. For example, the adhesive layer may have the adhesive layer lowered by irradiating ultraviolet rays to the predetermined area, and for example, a resin having a photoreactive carbon-carbon double bond may remain. When an adhesive layer is an ultraviolet curing type, the adhesiveness of an adhesive layer can be reduced by performing the process of irradiating an ultraviolet-ray to an adhesive layer between (B) process and (C) process.

When the film for forming the support piece includes a thermosetting resin layer, the step of curing the thermosetting resin layer or the adhesive piece by heating the film or the support piece for forming the support piece may be performed at an appropriate timing, for example, (G) It should be carried out before the process. In the step of arranging the chip with the adhesive piece so as to be in contact with the surfaces of the plurality of support pieces, it is possible to suppress deformation of the support piece according to the arrangement of the chip with the adhesive piece because the thermosetting resin layer has already been cured. Moreover, since the thermosetting resin layer has adhesiveness with respect to another member (for example, a board|substrate), it is not necessary to provide an adhesive bond layer etc. separately for a support piece.

The thickness of the said film for support piece formation may be 5-180 micrometers or 20-120 micrometers, for example. When the thickness of the film for forming a support piece is within this range, it is possible to construct a dolmen structure having an appropriate height with respect to a first chip (eg, a controller chip). The film for support piece formation may also contain a thermosetting resin layer. It is preferable that a thermosetting resin layer contains an epoxy resin, and contains an elastomer, for example. When the thermosetting resin layer constituting the support piece contains the elastomer, the stress in the semiconductor device can be relieved.

One aspect of the present disclosure relates to a method of manufacturing a support piece used in a manufacturing process of a semiconductor device having a dolmen structure. The manufacturing method of a support piece includes the following processes.

(A) Process of preparing laminated|multilayer film provided with a base film, an adhesion layer, and the film for support piece formation in this order

(B) The process of forming a some support piece on the surface of an adhesion layer by separating the film for support piece formation into pieces

(C) The step of picking up the support piece from the adhesive layer

In addition, the shear viscosity in 120 degreeC of the film for support piece formation is 4000 Pa*s or more.

One aspect of the present disclosure includes a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, and the first chip supported by the plurality of support pieces A laminated film for forming a support piece used in a manufacturing process of a semiconductor device having a dolmen structure including a second chip disposed to cover, comprising a base film, an adhesive layer, and a film for forming a support piece in this order, , It relates to the laminated|multilayer film for support piece formation whose shear viscosity in 120 degreeC of the film for support piece formation is 4000 Pa*s or more. The film for support piece formation may contain the thermosetting resin layer.

According to the present disclosure, in the manufacturing process of a semiconductor device having a dolmen structure, a process for manufacturing a support piece can be simplified, and furthermore, a method for manufacturing a semiconductor device capable of stably supporting stacked semiconductor chips is provided. . Moreover, according to this indication, the manufacturing method of a support piece, and laminated|multilayer film for support piece formation are provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically 1st Embodiment of a semiconductor device.
Fig. 2(a), Fig. 2(b), and Fig. 2(c) are plan views schematically showing an example of the positional relationship between the first chip and the plurality of support pieces.
Fig. 3(a) is a plan view schematically showing one embodiment of the laminated film for forming a support piece, and Fig. 3(b) is a cross-sectional view taken along line bb in Fig. 3(a).
4 : is sectional drawing which shows typically the process of bonding an adhesion layer and the film for support piece formation.
Fig. 5 (a), Fig. 5 (b), Fig. 5 (c), and Fig. 5 (d) are cross-sectional views schematically showing the manufacturing process of the support piece.
Fig. 6 is a cross-sectional view schematically showing a state in which a plurality of support pieces are arranged on a substrate and around the first chip.
7 : is sectional drawing which shows typically an example of a chip|tip with an adhesive bond piece.
8 : is sectional drawing which shows typically the dolmen structure formed on the board|substrate.
9 is a cross-sectional view schematically showing a second embodiment of a semiconductor device.
Fig. 10(a) is a top view showing an example of a substrate with a support piece used in Examples, Fig. 10(b) is a cross-sectional view taken along line bb in Fig. 10(a), and Fig. 10 . (c) is a cross-sectional view which shows an example of the laminated body used in an Example.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described in detail, referring drawings. However, this invention is not limited to the following embodiment. In addition, in this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means an acrylate or a methacrylate corresponding thereto. "A or B" may include any one of A and B, and may include both.

As used herein, the term "layer" includes a structure of a shape formed in a part in addition to a structure of a shape formed on the entire surface when viewed as a plan view. In addition, in this specification, the term "process" is included in this term as long as the desired action of the process is achieved even if it cannot be clearly distinguished from an independent process as well as other processes. In addition, the numerical range indicated using "-" shows the range which includes the numerical value described before and after "-" as a minimum value and a maximum value, respectively.

In the present specification, the content of each component in the composition means the total amount of the plurality of substances present in the composition, unless otherwise specified, when a plurality of substances corresponding to each component exist in the composition. In addition, unless otherwise indicated, an example material may be used independently and may be used in combination of 2 or more type. In addition, in the numerical range described step by step in this specification, the upper limit or lower limit of the numerical range of a predetermined step may be substituted with the upper limit or lower limit of the numerical range of another step. In addition, in the numerical range described in this specification, you may substitute the upper limit or lower limit of the numerical range with the value shown in an Example.

<First embodiment>

(Semiconductor device)

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically 1st Embodiment of a semiconductor device. The semiconductor device 100 shown in FIG. 1 includes a substrate 10 , a chip T1 (first chip) disposed on the surface of the substrate 10 , and a chip T1 on the surface of the substrate 10 . a plurality of support pieces Dc disposed around the chip T1, a chip T2 (second chip) disposed above the chip T1, and the chip T2 and the plurality of support pieces Dc The adhesive piece Tc, the chips T3 and T4 laminated on the chip T2, and the electrodes (not shown) on the surface of the substrate 10 and the chips T1 to T4 are electrically connected to each other. A plurality of wires w and a sealing material 50 filled with a gap between the chip T1 and the chip T2 and the like are provided.

In the present embodiment, a plurality of support pieces Dc, a chip T2, and an adhesive piece Tc positioned between the support pieces Dc and the chip T2 are placed on the substrate 10 for dolmen structure is made up. The chip T1 is separated from the adhesive piece Tc. By appropriately setting the thickness of the support piece Dc, a space for the wire w connecting the upper surface of the chip T1 and the substrate 10 can be secured.

The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. From the viewpoint of suppressing warpage of the semiconductor device 100 , the thickness of the substrate 10 is, for example, 90 to 300 µm, and may be 90 to 210 µm.

The chip T1 is, for example, a controller chip, which is adhered to the substrate 10 with an adhesive piece Tc and is electrically connected to the substrate 10 with a wire w. The shape of the chip T1 in plan view is, for example, a quadrangle (square or rectangle). The length of one side of the chip T1 is, for example, 5 mm or less, and may be 2 to 5 mm or 1 to 5 mm. The thickness of the chip T1 is, for example, 10 to 150 µm, and may be 20 to 100 µm.

The chip T2 is, for example, a memory chip, and is adhered on the support piece Dc via an adhesive piece Tc. The chip T2 has a larger size than the chip T1 in plan view. The shape of the chip T2 in plan view is, for example, a quadrangle (square or rectangle). The length of one side of the chip T2 is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the chip T2 is, for example, 10 to 170 µm, and may be 20 to 120 µm. Further, the chips T3 and T4 are, for example, memory chips, and are adhered on the chip T2 via an adhesive piece Tc. The length of one side of the chips T3 and T4 may be the same as that of the chip T2 , and the thickness of the chips T3 and T4 may also be the same as that of the chip T2 .

The support piece Dc serves as a spacer that forms a space around the chip T1. The support piece Dc contains the hardened|cured material (hardened|cured material of a thermosetting resin composition) of the film for support piece formation. The shear viscosity at 120 degreeC of the film for support piece formation is 4000 Pa*s or more so that it may mention later. In addition, as shown in FIG.2(a), two support pieces Dc (shape: rectangle) may be arrange|positioned at the position where both sides of the chip|tip T1 are separated, and, as shown in FIG.2(b), Similarly, one support piece Dc (shape: square, total of four) may be arranged at a position corresponding to the edge of the chip T1, and as shown in Fig. 2(c), the chip T1 You may arrange|position one support piece Dc (shape: a rectangle, a total of four) each at the position corresponding to the side of. The length of one side of the support piece Dc in a planar view is 20 mm or less, for example, and 1-20 mm or 1-12 mm may be sufficient as it. The thickness (height) of the support piece Dc is, for example, 10-180 µm, and may be 20-120 µm.

(Manufacturing method of support piece)

An example of the manufacturing method of a support piece is demonstrated. The manufacturing method which concerns on this embodiment includes the process of the following (A)-(C).

(A) A laminated film 20 for forming a support piece comprising a base film 1, an adhesive layer 2, and a film D for forming a support piece in this order (hereinafter referred to as "laminated film ( 20)") preparation process (refer to FIGS. 3 and 4)

(B) Step of forming a plurality of support pieces Da on the surface of the adhesive layer 2 by separating the film (D) for forming a support piece into pieces (refer to Fig. 5(b))

(C) Step of picking up the support piece Da from the pressure-sensitive adhesive layer 2 (see Fig. 5(d))

In addition, the support piece Dc shown in FIG. 1 is a thing after the adhesive bond piece (thermosetting resin composition) contained in this is hardened|cured. On the other hand, the support piece Da is in a state before the adhesive piece (thermosetting resin composition) contained in this is completely hardened (for example, refer FIG.5(b)).

The steps of (A) to (C) are processes for manufacturing the plurality of support pieces Da. Hereinafter, steps (A) to (C) will be described with reference to FIGS. 3 to 5 .

[(A) Process]

(A) A process is a process of preparing the laminated|multilayer film 20. The laminated|multilayer film 20 is equipped with the base film 1, the adhesion layer 2, and the film D for support piece formation. The base film 1 is a polyethylene terephthalate film (PET film), for example. The adhesive layer 2 is formed circularly by punching etc. (refer FIG.3(a)). The adhesive layer 2 may consist of a pressure-sensitive adhesive, or may consist of an ultraviolet curing adhesive. When the pressure-sensitive adhesive layer 2 is made of a UV-curable pressure-sensitive adhesive, the adhesive layer 2 has a property of lowering the adhesiveness when irradiated with UV light. The film D for support piece formation is formed circularly by punching etc., and has a smaller diameter than the adhesion layer 2 (refer FIG.3(a)). The film (D) for support piece formation may contain the thermosetting resin layer 5 which consists of a thermosetting resin composition.

The thermosetting resin composition constituting the thermosetting resin layer 5 in the film (D) for support piece formation undergoes a semi-cured (B stage) state, and a fully cured product (C stage) state is obtained by subsequent curing treatment. it can be The thermosetting resin composition contains an epoxy resin, a curing agent, and an elastomer (for example, an acrylic resin) from the viewpoint that the shear viscosity can be easily adjusted within a predetermined range, and, if necessary, an inorganic filler and a curing accelerator, etc. may be included. The detail of the thermosetting resin composition which comprises the thermosetting resin layer 5 in the film (D) for support piece formation is mentioned later.

The thickness of the film (D) for support piece formation may be 5-180 micrometers or 20-120 micrometers, for example. When the thickness of the film for forming a support piece is within this range, it is possible to construct a dolmen structure having an appropriate height with respect to a first chip (eg, a controller chip).

The shear viscosity in 120 degreeC of the film (D) for support piece formation is 4000 Pa*s or more. The shear viscosity at 120 degreeC of the film (D) for support piece formation is 4500 Pa.s or more, 5000 Pa.s or more, 7000 Pa.s or more, 10000 Pa.s or more, 15000 Pa.s or more, 18000 Pa.s or more, 20000 Pa. s or more, or 23000 Pa·s or more may be sufficient. When the shear viscosity in 120 degreeC of the film (D) for support piece formation is 4000 Pa*s or more, the grade of the flow deformation of the film for support piece formation becomes low, As a result, the support stability of a semiconductor chip can be improved. Although the upper limit in particular of the shear viscosity in 120 degreeC of the film (D) for support piece formation is not restrict|limited, 100000 Pa.s or less, 70000 Pa.s or less, or 50000 Pa.s or less may be sufficient. The shear viscosity in 120 degreeC of the film (D) for support piece formation can be adjusted, for example by adjusting suitably the kind, content, etc. of the containing component of the thermosetting resin composition mentioned later.

The laminated film 20 is, for example, the base film 1 and the 1st laminated|multilayer film which has the adhesive layer 2 on the surface, the cover film 3, and the film for support piece formation on the surface ( It is producible by bonding together the 2nd laminated|multilayer film which has D) (refer FIG. 4). A 1st laminated|multilayer film is obtained through the process of forming an adhesion layer by coating on the surface of the base film 1, and the process of processing an adhesion layer into a predetermined shape (for example, circular) by punching etc. . The 2nd laminated|multilayer film is predetermined by the process of forming the film for support piece formation by coating on the surface of the cover film 3 (for example, PET film or a polyethylene film), and punching the film for support piece formation, etc. It is obtained through a process of processing into a shape (eg, a circle). In using the laminated film 20, the cover film 3 is peeled off at an appropriate timing.

[(B) Process]

(B) A process is a process of forming the some support piece Da on the surface of the adhesion layer 2 by separating the film D for support piece formation into pieces. As shown in FIG.5(a), the dicing ring DR is affixed to the laminated|multilayer film 20. As shown in FIG. That is, the dicing ring DR is affixed to the adhesion layer 2 of the laminated|multilayer film 20, and let the film D for support piece formation be arrange|positioned inside the dicing ring DR. The film (D) for support piece formation is diced into pieces (refer FIG.5(b)). Thereby, many support pieces Da are obtained from the film D for support piece formation.

[(C) Process]

(C) A process is a process of picking up the support piece Da from the adhesion layer 2 . As shown in FIG.5(c), by expanding the base film 1, the support piece Da is mutually spaced apart. Next, as shown in FIG.5(d), while pushing up the support piece Da with the pushing jig 42, while peeling the support piece Da from the adhesion layer 2, the suction collet 44 ) to pick up the support piece Da.

(Method for manufacturing semiconductor device)

A method of manufacturing the semiconductor device 100 will be described. The manufacturing method which concerns on this embodiment includes the process of (A)-(C), and further includes the process of the following (D)-(H).

(D) A process of arranging the first chip T1 on the substrate 10 .

(E) disposing a support piece Da (a support piece Da including at least a metal piece 6p) on the substrate 10 and obtained by a plurality of the above manufacturing methods around the first chip T1 Process (see Fig. 6)

(F) A step of preparing a chip T2a with an adhesive piece T2a comprising a second chip T2 and an adhesive piece Ta provided on one surface of the second chip T2 (refer to FIG. 7 )

(G) Step of constructing a dolmen structure by arranging the chips T2a with adhesive pieces on the surfaces of the plurality of support pieces Dc (see Fig. 8)

(H) Step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 (refer to FIG. 1)

Steps (D) to (H) are processes for constructing a dolmen structure on the substrate 10 using a plurality of support pieces Da. Hereinafter, steps (D) to (H) will be described with reference to FIGS. 6 to 8 .

[(D) Process]

Step (D) is a step of disposing the first chip T1 on the substrate 10 . For example, first, the chip T1 is arranged at a predetermined position on the substrate 10 with the adhesive piece Tc interposed therebetween. Then, the chip T1 is electrically connected to the substrate 10 with a wire w.

[(E) process]

Step (E) is a step of disposing a plurality of support pieces Da on the substrate 10 and around the first chip T1 . Through this process, the structure 30 shown in FIG. 6 is produced. The structure 30 includes a substrate 10 , a chip T1 disposed on the surface thereof, and a plurality of support pieces Da. What is necessary is just to arrange|position the support piece Da by crimping|compression-bonding process. It is preferable to perform crimping|compression-bonding process over 0.5 to 3.0 second on the conditions of 80-180 degreeC and 0.01-0.50 MPa, for example. In addition, as for the support piece Da, the adhesive bond piece 5p contained in this may be fully hardened|cured at the time of the (E) process, and it may become the support piece Dc, and it does not need to be fully hardened at this point. It is preferable that the adhesive bond piece 5p contained in the support piece Da is fully hardened|cured before the start of the (G) process, and becomes the adhesive bond piece 5c.

[(F) Process]

Step (F) is a step of preparing the chip T2a with an adhesive piece shown in FIG. 7 . The chip|tip T2a with an adhesive bond piece is equipped with the chip|tip T2 and the adhesive bond piece Ta provided in the one surface. The chip T2a with an adhesive piece can be obtained through a dicing process and a pick-up process using, for example, a semiconductor wafer and a dicing die-bonding integrated film.

[(G) process]

(G) Process is a process of arrange|positioning the chip|tip T2a with an adhesive bond piece above the chip|tip T1 so that the adhesive bond piece Ta may contact with the upper surface of the some support piece Dc. Specifically, the chip T2 is pressed onto the upper surface of the support piece Dc with the adhesive piece Ta interposed therebetween. It is preferable to implement this crimping|compression-bonding process over 0.5 to 3.0 second on the conditions of 80-180 degreeC and 0.01-0.50 MPa, for example. Next, the adhesive piece Ta is hardened by heating. It is preferable to perform this hardening process over 5 minutes or more on conditions of 60-175 degreeC and 0.01-1.0 MPa, for example. Thereby, the adhesive bond piece Ta is hardened|cured and it becomes the adhesive bond piece Tc. Through this process, a dolmen structure is constructed on the substrate 10 (refer to FIG. 8).

After the step (G) and before the step (H), the chip T3 is disposed on the chip T2 with an adhesive piece interposed therebetween, and the chip T4 is disposed on the chip T3 with the adhesive piece interposed therebetween. The adhesive piece may just be the same thermosetting resin composition as the above-mentioned adhesive piece Ta, and it will become the adhesive bond piece Tc by heat-hardening (refer FIG. 1). On the other hand, the chips T2 , T3 , and T4 and the substrate 10 are electrically connected to each other with wires w . In addition, the number of chips laminated|stacked above the chip|tip T1 is not limited to three of this embodiment, What is necessary is just to set suitably.

[(H) process]

Step (H) is a step of sealing the gap between the chip T1 and the chip T2 with the sealing material 50 . Through this process, the semiconductor device 100 shown in FIG. 1 is completed.

(thermosetting resin composition)

As described above, the thermosetting resin composition constituting the thermosetting resin layer 5 in the film (D) for forming a support piece is easy to adjust the shear viscosity to a predetermined range, and thus an epoxy resin, a curing agent, It may contain an elastomer and further contain an inorganic filler, a hardening accelerator, etc. as needed. According to examination by the present inventors, it is preferable that the support piece Da and the support piece Dc after hardening further have the following characteristics.

Characteristic 1: When the support piece Da is thermocompression-bonded to a predetermined position on the substrate 10, position shift is unlikely to occur

Characteristic 2: The adhesive piece 5c exhibits stress relaxation properties in the semiconductor device 100 (the thermosetting resin composition contains an elastomer (rubber component))

Characteristic 3: Die of a chip with an adhesive piece having a sufficiently high adhesive strength with the adhesive piece Tc (that is, the adhesive piece 5c to the adhesive piece Tc (that is, a cured product of a film made of a thermosetting resin layer) Shear strength (shear strength) is, for example, 2.0 to 7.0 Mpa or 3.0 to 6.0 Mpa)

Characteristic 4: Shrinkage rate due to curing is sufficiently small

-Characteristic 5: Good visibility of the support piece Da by a camera in a pick-up process (The thermosetting resin composition contains a coloring agent, for example)

Characteristic 6: The adhesive piece 5c has sufficient mechanical strength

[Epoxy Resin]

The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. Bifunctional epoxy resins, such as a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, and a bisphenol S type epoxy resin, a novolak type epoxy resin, such as a phenol novolak type epoxy resin, and a cresol novolak type epoxy resin, etc. can be used. Moreover, generally known things, such as a polyfunctional epoxy resin, a glycidylamine type epoxy resin, a heterocyclic-containing epoxy resin, and an alicyclic epoxy resin, are applicable. These may be used individually by 1 type, and may use 2 or more types together.

[hardener]

As a hardening|curing agent, a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, an acid anhydride, etc. are mentioned, for example. Among these, a phenol resin is preferable from a viewpoint of achieving high die shear strength (shear strength). As a commercial item of a phenol resin, For example, LF-4871 (trade name, BPA novolak type phenol resin) manufactured by DIC Corporation, HE-100C-30 (trade name, phenyl aralkyl type phenol resin) manufactured by Air Water Corporation, DIC Phenolite KA and TD series manufactured by Mitsui Chemicals Co., Ltd. Milex XLC-series and XL series (eg, Milex XLC-LL) manufactured by Mitsui Chemicals Co., Ltd., HE series manufactured by Air Water Corporation (eg, HE100C) -30), MEHC-7800 series manufactured by Meiwa Kasei Co., Ltd. (eg MEHC-7800-4S), JDPP series manufactured by JEF Chemical Co., Ltd., PSM series manufactured by Gunei Chemical Co., Ltd. (eg PSM) -4326) and the like. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of achieving high die shear strength (shear strength), the compounding amount of the epoxy resin and the phenol resin is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and 0.8 1.3 is more preferred. When a compounding ratio is in the said range, it is easy to achieve both sclerosis|hardenability and fluidity|liquidity at a sufficiently high level.

[Elastomer]

As the elastomer, for example, acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene , phenol-modified polybutadiene, and carboxy-modified acrylonitrile.

From the viewpoint of the moldability of the film, an acrylic resin is preferred as the elastomer, and an epoxy group such as glycidyl acrylate or glycidyl methacrylate or a functional monomer having a glycidyl group as a crosslinkable functional group. An epoxy group obtained by polymerization Acrylic resins, such as a containing (meth)acrylic copolymer, are more preferable. Among the acrylic resins, an epoxy group-containing (meth)acrylic acid ester copolymer and an epoxy group-containing acrylic rubber are preferable, and an epoxy group-containing acrylic rubber is more preferable. The epoxy group-containing acrylic rubber has an acrylic acid ester as a main component, and is mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, and the like, and is a rubber having an epoxy group. Moreover, acrylic resin may have crosslinkable functional groups, such as not only an epoxy group but alcoholic or phenolic hydroxyl group, and a carboxyl group.

Commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, SG-P3 solvent modified products manufactured by Nagase Chemtex Co., Ltd. (trade name, acrylic rubber, weight average molecular weight: 800,000 , Tg: 12°C, solvent: cyclohexanone), SG-P3 low molecular weight product (trade name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 300,000, Tg: 12°C, solvent: cyclohexanone), etc. can be heard

From a viewpoint of the moldability of a film, it is preferable that it is -50-50 degreeC, and, as for the glass transition temperature (Tg) of an acrylic resin, it is more preferable that it is -30-30 degreeC. It is preferable from a viewpoint of the moldability of a film that it is 100,000-3 million, and, as for the weight average molecular weight (Mw) of an acrylic resin, it is more preferable that it is 500,000-2 million. Here, Mw means the value measured by gel permeation chromatography (GPC) and converted using the calibration curve by standard polystyrene. Moreover, there exists a tendency which can form a highly elastic adhesive bond piece by using an acrylic resin with a narrow molecular weight distribution.

The amount of the acrylic resin contained in the thermosetting resin composition is preferably 10 to 200 parts by mass based on 100 parts by mass in total of the epoxy resin and the epoxy resin curing agent from the viewpoint of achieving high die shear strength (shear strength), and 20 to 100 parts by mass. It is more preferable that it is a mass part.

It is preferable that the quantity of the acrylic resin contained in a thermosetting resin composition is 50 mass parts or more with respect to a total of 100 mass parts of an epoxy resin and an epoxy resin hardening|curing agent from a viewpoint of achieving high shear viscosity.

[Inorganic Filler]

Examples of the inorganic filler include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, non Qualitative silica etc. are mentioned. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of achieving high die shear strength (shear strength), the average particle diameter of the inorganic filler is preferably 0.005 μm to 1.0 μm, and more preferably 0.05 μm to 0.5 μm. The surface of the inorganic filler is preferably chemically modified from the viewpoint of achieving high die shear strength (shear strength). As a material which chemically modifies the surface, a silane coupling agent etc. are mentioned, for example. As a kind of functional group of a silane coupling agent, a vinyl group, a (meth)acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, an ethoxy group etc. are mentioned, for example.

From the viewpoint of achieving high die shear strength (shear strength), with respect to 100 parts by mass of the resin component of the thermosetting resin composition, the content of the inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass.

[curing accelerator]

Examples of the curing accelerator include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of achieving high die shear strength (shear strength), an imidazole-based compound is preferable. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methyl. Midazole, etc. are mentioned. These may be used individually by 1 type, and may use 2 or more types together.

The content of the curing accelerator in the thermosetting resin composition is preferably 0.04 to 3 parts by mass, and 0.04 to 0.2 parts by mass relative to a total of 100 parts by mass of the epoxy resin and the epoxy resin curing agent from the viewpoint of achieving high die shear strength (shear strength). A mass part is more preferable.

<Second embodiment>

9 is a cross-sectional view schematically showing a second embodiment of a semiconductor device. In the semiconductor device 100 according to the first embodiment, the chip T1 is separated from the adhesive piece Tc, whereas in the semiconductor device 200 according to the present embodiment, the chip T1 is the adhesive piece Tc. (Tc) is in contact. That is, the adhesive piece Tc is in contact with the upper surface of the chip T1 and the upper surface of the support piece Dc. For example, by setting the thickness of the film D for support piece formation suitably, the position of the upper surface of the chip|tip T1 and the position of the upper surface of the support piece Dc can be made to match.

In the semiconductor device 200 , the chip T1 is flip-chip connected to the substrate 10 rather than by wire bonding. Further, when the chip T2 and the chip T2 are embedded in the adhesive piece Ta constituting the chip T2a with the adhesive piece, even if the chip T1 is wire-bonded to the substrate 10, the chip T1 It can be set as the state in contact with this adhesive bond piece Tc.

Example

Hereinafter, although an Example demonstrates this indication, this invention is not limited to these Examples.

[Production of film for forming support piece]

<Preparation of varnish>

The materials shown in Table 1 were used in the composition ratios (unit: parts by mass) shown in Table 1. To the epoxy resin, the phenol resin, and the inorganic filler, cyclohexanone was added and stirred and mixed. Content of cyclohexanone was adjusted so that a solid content ratio might be set to 40 mass % in the varnish finally obtained. The elastomer was added to this, the coupling agent and the hardening accelerator were further added, and it stirred until each component became uniform, and prepared varnishes A-E.

The detail of each component shown in Table 1 is as follows.

・Epoxy resin: YDCN-700-10 (trade name, manufactured by Shin-Nittetsu Sumikin Chemical Co., Ltd., o-cresol novolak type epoxy resin, epoxy equivalent: 209 g/eq)

・EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol F-type epoxy resin, epoxy equivalent: 159 g/eq)

Phenolic resin (curing agent): HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenol aralkyl type phenol resin, hydroxyl equivalent: 170 g/eq)

Phenolic resin (hardening agent): PSM-4326 (trade name, manufactured by Gunei Chemical Co., Ltd., phenol novolak type phenol resin, hydroxyl equivalent: 105 g/eq)

・Inorganic filler: Aerosil R972 (trade name, manufactured by Nippon Aerosil Co., Ltd., silica, average particle diameter 0.016 μm)

・Inorganic filler: SC2050-HLG (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 μm)

・Elastomer: SG-P3 solvent modified product (trade name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone)

・Elastomer: SG-P3 low molecular weight product (trade name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 300,000, Tg: 12°C, solvent: cyclohexanone)

-Coupling agent: A-189 (trade name, GE Toshiba Corporation make, γ-mercaptopropyl trimethoxysilane)

-Coupling agent: A-1160 (trade name, GE Toshiba Corporation make, γ-ureidopropyltriethoxysilane)

Curing accelerator: Qazole 2PZ-CN (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[Table 1]

<Production of film for forming support piece>

(Example 1)

The varnish A was vacuum-defoamed while filtering with the filter of 100 mesh. As a base film, the polyethylene terephthalate (PET) film which performed the mold release process of 38 micrometers was prepared, and the varnish A after vacuum defoaming was apply|coated on the PET film. The applied varnish A was heat-dried at 90 degreeC for 5 minutes, then 130 degreeC for 5 minutes in two steps, and the film for support piece formation of Example 1 in a B-stage state was obtained. The application amount of the varnish A was adjusted so that it might become 50 micrometers in thickness.

(Example 2)

Except having changed the varnish A into the varnish B, it carried out similarly to Example 1, and obtained the film for support piece formation of Example 2.

(Example 3)

Except having changed the varnish A into the varnish C, it carried out similarly to Example 1, and obtained the film for support piece formation of Example 3.

(Comparative Example 1)

Except having changed the varnish A into the varnish D, it carried out similarly to Example 1, and obtained the film for support piece formation of the comparative example 1.

(Comparative Example 2)

Except having changed the varnish A into the varnish E, it carried out similarly to Example 1, and obtained the film for support piece formation of the comparative example 2.

[Evaluation of the film for forming a support piece]

<Measurement of shear viscosity>

Each of the films for support piece formation of Examples 1-3 and Comparative Examples 1 and 2 (thickness 50 micrometers) was cut|disconnected to predetermined size, and the film piece of 4 sheets was prepared. A 200-micrometer-thick sample was produced by laminating four film pieces on a 60 degreeC hotplate using a rubber roll. The obtained sample was punched out with a punch of (phi) 9 mm, and using a shear viscometer (manufactured by TA Instruments Japan, trade name: ARES-G2), under the following conditions, the measurement temperature of each film for forming a support piece is 120 ° C. The shear viscosity was measured. A result is shown in Table 1.

・Measurement frequency: 1Hz

·Temperature increase rate: 5°C/min

・Measurement temperature: 35~130℃

·Axial force: 100gf (0.98N)

<Evaluation of support stability>

(Production of substrate with support piece)

Examples 1 to 3 and Comparative Examples 1 and 2 film (thickness 50 µm) for forming a support piece is respectively affixed to an adhesion film having a base film and an adhesion layer (adhesive layer thickness: 10 µm, manufactured by Hitachi Chemical Co., Ltd.), and laminated made the film. The obtained laminated|multilayer film was divided into pieces using full auto dicer DFD-6361 (made by Disco Corporation). A dicing blade ZH05-SD4000-N1-xx-BB (all manufactured by Disco Corporation) was used. Cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm/sec, and a size of 6 mm x 3 mm. Next, the support piece was picked up using the collet for pickup.

Then, by arranging the obtained two support pieces on a soldering resist substrate (Tayo Holdings Co., Ltd., trade name: AUS-308) and thermocompression bonding, the substrates with support pieces of Examples 1-3 and Comparative Examples 1 and 2 were obtained. . The thermocompression bonding conditions were a temperature of 120°C, a time of 1 second, and a pressure of 0.1 MPa. Fig. 10A is a top view showing an example of a substrate with a support piece used in Examples, and Fig. 10B is a cross-sectional view taken along the line b-b in Fig. 10A. As shown in FIG. 10 , the substrate 300 with a support piece includes a substrate 310 and two support pieces Da disposed on the substrate 310 so as to be in contact with both opposite sides of the substrate 310 . are doing

(Production of chips with adhesive pieces)

A dicing die-bonding integrated adhesive film having a film adhesive and an adhesive film (film adhesive: 50 μm in thickness, adhesive film: 110 μm in thickness, manufactured by Hitachi Kasei Co., Ltd.) and a silicon wafer having a thickness of 400 μm were prepared. A dicing sample was produced by laminating a silicon wafer to the film adhesive of the dicing die-bonding integrated adhesive film at a stage temperature of 70 degreeC.

The obtained dicing sample was cut|disconnected using the full auto dicer DFD-6361 (made by Disco Corporation). The cutting was performed by a step-cut method using two blades, and dicing blades ZH05-SD3500-N1-xx-DD and ZH05-SD4000-N1-xx-BB (both manufactured by Disco Corporation) were used. Cutting conditions were a blade rotation speed of 4000 rpm, a cutting speed of 50 mm/sec, and a chip size of 6 mm x 12 mm. The cut|disconnection performed the 1st-stage cut|disconnection so that about 200 micrometers of silicon wafers might remain, and then, the 2nd step cut|disconnection was performed so that about 20 micrometers might be cut|disconnected to the adhesion film. Next, the chip|tip with an adhesive bond piece was obtained by picking up a chip|tip using the collet for pick-up.

(Production of evaluation samples)

On the support pieces of the substrates with the support pieces of Examples 1 to 3 and Comparative Examples 1 and 2, respectively, the adhesive pieces of the chips with the adhesive pieces were placed so that the substrates of the substrates with the support pieces and the chips of the chips with the adhesive pieces overlapped, thermocompressed. The thermocompression bonding conditions were a temperature of 120°C, a time of 1 second, and a pressure of 0.1 MPa. Fig. 10C is a cross-sectional view showing an example of a laminate used in Examples. As shown to FIG.10(c), the laminated body 400 includes the board|substrate 300 with a support piece, the chip|tip T300a with an adhesive bond piece which consists of the adhesive agent piece Ta, and the chip|tip T300, and a support piece. Two support pieces Da are provided between the attachment substrate 300 and the chip|tip T300a with an adhesive bond piece. Then, the evaluation samples of Examples 1-3 and Comparative Examples 1 and 2 were obtained by putting the laminated body obtained by thermocompression bonding in a dryer, and heat-hardening at 170 degreeC for 1 hour.

(Cross-section observation under a microscope)

The cross section of the evaluation samples of the produced Examples 1-3 and Comparative Examples 1 and 2 was observed with the microscope, and the dispersion|variation in the height of the support piece was evaluated. A case in which the support piece was not deformed or contracted and the substrate and the chip were held in parallel was evaluated as "A", and that in which the support piece was deformed or contracted and the substrate and the chip became non-parallel was evaluated as "B". A result is shown in Table 2.

[Table 2]

As shown in Table 2, as for the evaluation samples of Examples 1-3 using the film for support piece formation whose shear viscosity in 120 degreeC is 4000 Pa*s or more, the support piece whose shear viscosity in 120 degreeC is less than 4000 Pa*s. Compared with the evaluation samples of Comparative Examples 1 and 2 using the film for formation, the dispersion|variation in the height of the support piece was suppressed. From the above, it was confirmed that the semiconductor device manufacturing method of this invention can manufacture the semiconductor device which can support the semiconductor chip laminated|stacked stably.

Industrial Applicability

According to the present disclosure, in the manufacturing process of a semiconductor device having a dolmen structure, a process for manufacturing a support piece can be simplified, and furthermore, a method for manufacturing a semiconductor device capable of stably supporting stacked semiconductor chips is provided. . Moreover, according to this indication, the manufacturing method of a support piece, and laminated|multilayer film for support piece formation are provided.

One… base film
2… adhesive layer
5… thermosetting resin layer
10, 310… Board
20… Laminated film for forming a support piece
50… sealant
100, 200… semiconductor device
300… Substrate with support piece
400… laminate
D… Film for forming support piece
Da… support
Dc… Support piece (hardened product)
T1… first chip
T2… second chip
T300… chip
T2a, T300a... Chip with adhesive piece
Ta… adhesive piece
Tc... Adhesive piece (hardened product)

Claims (6)

a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, supported by the plurality of support pieces and covering the first chip A method of manufacturing a semiconductor device having a dolmen structure including a second chip disposed thereon, the method comprising:
(A) the process of preparing a laminated|multilayer film provided with a base film, an adhesion layer, and the film for support piece formation in this order;
(B) the step of forming a plurality of support pieces on the surface of the pressure-sensitive adhesive layer by separating the film for forming the support pieces into pieces;
(C) picking up the support piece from the adhesive layer;
(D) disposing the first chip on the substrate;
(E) disposing a plurality of the support pieces on the substrate and around the first chip;
(F) a step of preparing a chip with an adhesive piece comprising a second chip and an adhesive piece provided on one surface of the second chip;
(G) a step of constructing a dolmen structure by arranging the chips with the adhesive pieces on the surfaces of the plurality of support pieces;
The manufacturing method of the semiconductor device whose shear viscosity in 120 degreeC of the said film for support piece formation is 4000 Pa*s or more. The method according to claim 1,
The film for forming the support piece includes a thermosetting resin layer,
(G) The manufacturing method of a semiconductor device including the process of heating the said support piece formation film or the said support piece before a process. a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, supported by the plurality of support pieces and covering the first chip A method of manufacturing a support piece used in a manufacturing process of a semiconductor device having a dolmen structure including an disposed second chip, the method comprising:
(A) the process of preparing a laminated|multilayer film provided with a base film, an adhesion layer, and the film for support piece formation in this order;
(B) the step of forming a plurality of support pieces on the surface of the pressure-sensitive adhesive layer by separating the film for forming the support pieces into pieces;
(C) comprising the step of picking up the support piece from the adhesive layer,
The manufacturing method of the support piece whose shear viscosity in 120 degreeC of the said film for support piece formation is 4000 Pa*s or more. 4. The method according to claim 3,
The manufacturing method of the support piece in which the said film for support piece formation contains a thermosetting resin layer. a substrate, a first chip disposed on the substrate, a plurality of support pieces on the substrate and disposed around the first chip, supported by the plurality of support pieces and covering the first chip A laminated film for forming a support piece used in a manufacturing process of a semiconductor device having a dolmen structure including an disposed second chip, comprising:
a base film;
adhesive layer,
A film for forming a support piece is provided in this order,
The laminated film for support piece formation whose shear viscosity in 120 degreeC of the said film for support piece formation is 4000 Pa*s or more. 6. The method of claim 5,
The laminated film for support piece formation in which the said film for support piece formation contains a thermosetting resin layer.

Images