TWI830906B - Method for manufacturing semiconductor device with dolmen structure and method for manufacturing support sheet - Google Patents

Abstract

One aspect of the present disclosure is a method for manufacturing a support sheet used in forming a dolmen structure of a semiconductor device, which includes: (A) the step of preparing a laminated film, the laminated film sequentially including: a base film, an adhesive layer, and a support sheet-forming film composed of, for example, a thermosetting resin layer; (B) a step of forming a plurality of support sheets on the surface of the adhesive layer by singulating the support sheet-forming film; and (B) C) A step of picking up the support sheet in a state where the support sheet is pushed up from the base film side using a plurality of needles or a member having a flat front end surface.

Description

Method for manufacturing semiconductor device with dolmen structure and method for manufacturing support sheet

The present disclosure relates to a method of manufacturing a semiconductor device having a dolmen structure. The dolmen structure includes: a substrate; a first wafer disposed on the substrate; and a plurality of supporting pieces disposed on the substrate and being the first wafer. around the wafer; and a second wafer supported by a plurality of support sheets and configured to cover the first wafer. In addition, the present disclosure relates to a method of manufacturing a support sheet used in manufacturing a semiconductor device having a dolmen structure. Furthermore, a dolmen is a type of stone tomb that has multiple pillar stones and plate-shaped rocks placed on them. In a semiconductor device with a dolmen structure, the support piece is equivalent to the "pillar stone" and the second wafer is equivalent to the "plate-shaped rock".

In recent years, in the field of semiconductor devices, high integration, miniaturization, and high speed are required. As one form of the semiconductor device, a structure in which a semiconductor wafer is stacked on a controller wafer arranged on a substrate has attracted attention. For example, Patent Document 1 discloses a semiconductor die assembly including a controller die and a memory die supported by a supporting member on the controller die. The semiconductor device 100 shown in FIG. 1A of Patent Document 1 can be said to have a dolmen structure. That is, the semiconductor component 100 includes a package substrate 102 and a controller chip disposed on the surface of the package substrate 102. Die 103, memory die 106a, memory die 106b arranged above the controller die 103, and supporting members 130a and 130b supporting the memory die 106a.

[Prior art documents]

[Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2017-515306

Patent Document 1 discloses that a semiconductor material such as silicon can be used as a support member (support sheet), and more specifically, a fragment of a semiconductor material obtained by cutting a semiconductor wafer can be used (see [0012], [0014] of Patent Document 1 ] and Figure 2). When manufacturing a support sheet for a dolmen structure using a semiconductor wafer, the following steps are required, for example, similarly to manufacturing a general semiconductor wafer.

(1) The step of attaching a back grind tape to the semiconductor wafer; (2) The step of back grinding the semiconductor wafer; (3) Assembling the dicing ring and the back-grinded semiconductor wafer disposed therein The step of attaching a film having an adhesive layer and an adhesive layer (cutting-die bonding integrated film); (4) the step of peeling off the back polishing tape from the semiconductor wafer; (5) the step of singulating the semiconductor wafer; (6) The step of picking up the support sheet including the laminate of the semiconductor wafer and the adhesive sheet from the adhesive layer.

The present disclosure provides a method for manufacturing a support sheet that can efficiently manufacture a support sheet used in manufacturing a semiconductor device having a dolmen structure, thereby contributing to an improvement in the production efficiency of the semiconductor device. In addition, the present disclosure provides a method of efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet.

One aspect of the present disclosure relates to a method of manufacturing a support sheet used in manufacturing a semiconductor device having a dolmen structure.

A first aspect of the manufacturing method of the present disclosure includes the following steps.

(A) The step of preparing a laminated film, which in order includes: a base film, an adhesive layer, and a film for forming a support sheet; (B) By forming the film for forming a support sheet into a single piece, on the adhesive layer the step of forming a plurality of support sheets on the surface; (C) the step of picking up the support sheets in a state where the support sheets are pushed up from the base film side by a plurality of needles, and the support sheet forming film is any of the following films One kind.

． A film composed of a thermosetting resin layer;. A film composed of a layer obtained by hardening at least part of the thermosetting resin layer;. A multilayer film including a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer;. A multilayer film including a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer.

The second aspect of the manufacturing method of the present disclosure includes the following steps.

(A) The step of preparing a laminated film, which in order includes: a base film, an adhesive layer, and a film for forming a support sheet; (B) By forming the film for forming a support sheet into a single piece, on the adhesive layer the step of forming a plurality of support sheets on the surface; (C) the step of picking up the support sheets in a state where the support sheets are pushed up from the base film side by a member having a flat front end surface, and the support sheet forming film is as follows Any kind of membrane.

． A film composed of a thermosetting resin layer;. A film composed of a layer obtained by hardening at least part of the thermosetting resin layer;. A multilayer film including a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer;. A multilayer film including a thermosetting resin layer and a metal layer having higher rigidity than the thermosetting resin layer.

In this disclosure, the resin layer included in the support sheet forming film is, for example, a polyimide layer. The resin layer is made of a different material from the thermosetting resin layer, for example. The metal layer included in the supporting sheet forming film is, for example, a copper layer or an aluminum layer. Furthermore, the rigidity of the thermosetting resin layer after thermosetting may be lower than the rigidity of the resin layer or the metal layer, or may be higher than the rigidity of the resin layer or the metal layer.

Rigidity refers to the ability of an object to withstand damage from bending or twisting.

In the manufacturing method of the present disclosure, a support sheet obtained by singulating a film for forming a support sheet is used. In this way, using half chips obtained by cutting semiconductor wafers Compared with the previous manufacturing method of using a fragment of a conductive material as a support sheet, the steps of manufacturing the support sheet can be simplified. That is, the above-mentioned steps (1) to (6) were previously required. In contrast, the support sheet forming film does not include a semiconductor wafer. Therefore, steps (1), (2) and (1) related to back grinding of the semiconductor wafer can be omitted. (4) step. In addition, since semiconductor wafers, which are more expensive than resin materials, are not used, costs can also be reduced. Furthermore, since the thermosetting resin layer has adhesiveness to other members (for example, the substrate), it is not necessary to separately provide an adhesive layer or the like on the support sheet.

According to research by the present inventors, the pick-up property of the support sheet from the adhesive layer depends on the ease of peeling off the interface between the support sheet and the adhesive layer (hereinafter referred to as "interface peeling"), and the edge of the support sheet from the adhesive layer. The ease of peeling off (hereinafter referred to as "edge peeling"). In step (C) of the first aspect of the manufacturing method, the support sheet is pushed up by a plurality of needles, which easily causes interface peeling between the support sheet and the adhesive layer, thereby achieving excellent pick-up properties of the support sheet from the adhesive layer. .

The manufacturing method of the second aspect is based on the findings obtained by the present inventors based on the following phenomenon. That is, for example, after a plurality of support sheets are formed on the surface of an ultraviolet curable adhesive layer, even after the adhesive force of the adhesive layer is reduced by ultraviolet irradiation, sufficient pickup may not be achieved in the step of picking up the support sheets. sexual phenomenon. In order to improve this situation, the present inventors studied the types of push-up devices used in the picking step. As a result, it was found that a push-up device provided with a member having a flat front end surface is effective in improving the peelability of the edge of the support sheet. By pushing up the support sheet from the base film side with a flat front end surface, compared with the case of pushing up the support sheet with a plurality of needles, it is possible to suppress the occurrence of marks on the support sheet caused by pushing up, and to Efficiently peels the edge of the support sheet from the adhesive layer. Furthermore, the edge of the support sheet is not easily peeled off not only when an ultraviolet curable adhesive layer is used. Even when a pressure-sensitive adhesive layer is used, for example, when the film for forming the support sheet is separated into a single piece, it exceeds the limit. This may also occur when a part of the base film is also cut when using the film and adhesive layer for forming the support sheet.

When the film for forming the support sheet is a film composed of a thermosetting resin layer or a film composed of a layer in which at least part of the thermosetting resin layer is cured, more excellent pickup properties can be realized. From this point of view, step (B) may sequentially include: a step of forming an incision halfway in the thickness direction of the support sheet-forming film; and a step of dividing the cooled support sheet-forming film into individual pieces by expansion. On the other hand, when the film for forming a support sheet is a multilayer film including a thermosetting resin layer and a resin layer or metal layer having higher rigidity than the thermosetting resin layer, from the same viewpoint, In the laminated film prepared in step (A), the thermosetting resin layer is located between the resin layer and the adhesive layer, or between the metal layer and the adhesive layer. Step (B) may also include: cutting the film for forming the support sheet. a resin layer or a metal layer and forming a notch halfway in the thickness direction of the thermosetting resin layer; and a step of dividing the cooled support sheet forming film into individual pieces by expansion. In step (B), after the thermosetting resin layer is cut into half, the thermosetting resin layer is separated into individual pieces by cooling and expansion. Therefore, the edge of the adhesive sheet will not enter the adhesive layer, so a higher degree of realization can be realized. Excellent pick-up properties.

One aspect of the present disclosure relates to a method of manufacturing a semiconductor device having a dolmen structure. The manufacturing method includes the following steps.

(D) the step of arranging the first wafer on the substrate; (E) arranging a plurality of supports manufactured by the manufacturing method of the present disclosure on the substrate around the first wafer or around the area where the first wafer should be arranged the step of wafer; (F) the step of preparing a wafer with an adhesive sheet, the wafer with an adhesive sheet having a second wafer and an adhesive sheet disposed on one surface of the second wafer; (G) by A step of constructing a dolmen structure by arranging wafers with adhesive sheets on the surfaces of a plurality of support sheets.

Either step (D) or step (E) can be implemented first. When step (D) is performed first, in step (E), a plurality of supporting pieces only need to be arranged on the substrate around the first wafer. On the other hand, when step (E) is performed first, in step (E), a plurality of support sheets are arranged on the substrate around the area where the first wafer is to be arranged, and then, in step (D), , just configure the first chip in this area.

According to the present disclosure, there is provided a support sheet manufacturing method that can efficiently manufacture a support sheet used in manufacturing a semiconductor device having a dolmen structure, and can contribute to improvement in production efficiency of a semiconductor device. In addition, according to the present disclosure, a method of efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet is provided.

1: Base material film

1a:Inside area

2:Adhesive layer

2a: Peripheral area

3: Covering film

5, 5a, 5b: Thermosetting resin layer

5p: Adhesive tablets

6: Resin layer

6p: Resin sheet

10:Substrate

20, 20A, 20B: Laminated film for supporting sheet formation (laminated film)

25, 25A, 25B: laminated film

30:Structure

50:Sealing material

100:Semiconductor device

C: Adsorption chuck

D: Film for supporting sheet formation

D2: Double layer film (film for supporting sheet formation)

D3: Three-layer film (film for supporting sheet formation)

Da: support piece

Dc: support piece (hardened material)

DR: cutting ring

F, F1, F2: front end surface

f1: first side

f2: second side

G: incision

H: heater

P: component

P1: first cylindrical member

P2: Second cylindrical member

N: Needle

R: ring

T1: First chip (wafer)

T2: Second chip (wafer)

T3, T4: chip

T1c: Adhesive sheet/adhesive layer

T2a: Wafer with adhesive sheet

Ta: Adhesive tablets

Tc: Adhesive sheet (hardened material)

w: wire

FIG. 1 is a cross-sectional view schematically showing an example of the semiconductor device of the present disclosure.

2(a) and 2(b) are plan views schematically showing an example of the positional relationship between the first wafer and the plurality of support pieces.

FIG. 3(a) is a plan view schematically showing an example of the laminated film for supporting sheet formation, and FIG. 3(b) is a cross-sectional view taken along line b-b of FIG. 3(a).

4 is a cross-sectional view schematically showing a step of bonding an adhesive layer and a film for forming a support sheet.

FIG. 5(a) is a cross-sectional view schematically showing a state where a cutting ring is attached to the peripheral region of the adhesive layer, and FIG. 5(b) is a schematic cross-sectional view schematically showing the film for forming a support sheet being separated into individual pieces. A cross-sectional view of the state, (c) in FIG. 5 is a cross-sectional view schematically showing a state in which the distance between adjacent support pieces is widened by expansion.

FIG. 6(a) is a cross-sectional view schematically showing how the inner region of the base film is heated by blowing air from a heater, and FIG. 6(b) is a schematic cross-sectional view schematically showing how the support sheet is heated with a plurality of needles. Cross-sectional view of the support piece being picked up while being pushed.

7 is a cross-sectional view schematically showing a state in which a support sheet is pushed up from the base film side using a plurality of needles.

FIG. 8 is a cross-sectional view schematically showing a state in which a plurality of supporting sheets are arranged around the first wafer on the substrate.

FIG. 9 is a cross-sectional view schematically showing an example of a wafer with an adhesive sheet.

FIG. 10 is a cross-sectional view schematically showing a dolmen structure formed on a substrate.

11 is a cross-sectional view schematically showing a state in which the support piece is picked up in a state where the support piece is pushed up by a member having a flat front end surface.

Figure 12 (a) to Figure 12 (c) schematically show the multi-stage Cross-sectional view of the push-up device pushing up the support sheet, causing the edge of the support sheet to peel off from the adhesive layer.

(a) of FIG. 13 is a cross-sectional view schematically showing a state in which the support sheet-forming film is half-cut, and FIG. 13(b) is a plan view schematically showing an example of the half-cut support sheet-forming film.

14(a) and 14(b) are cross-sectional views schematically showing another embodiment of the laminated film for supporting sheet formation.

FIG. 15(a) is a cross-sectional view schematically showing a state in which the double-layer film shown in FIG. 14(a) is cut into half, and FIG. 15(b) is a schematic cross-sectional view showing a state in which the double-layer film shown in FIG. 14(b) is cut into half. A cross-sectional view of the three-layer film shown in a half-cut state.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. However, the present invention is not limited to the following embodiments. In addition, in this specification, "(meth)acrylic acid" means acrylic acid or methacrylic acid, and "(meth)acrylate" means acrylate or its corresponding methacrylate. The so-called "A or B" only needs to include either A or B, or both.

In this specification, the term "layer" includes a partially formed structure in addition to a structure having a shape formed on the entire surface when viewed in a plan view. In addition, in this specification, the term "step" does not only refer to an independent step. Even if it cannot be clearly distinguished from other steps, as long as the expected function of the step is achieved, it is also included in this term. . In addition, the numerical range expressed using "~" indicates the numerical points written before and after including "~". Not as a range of minimum and maximum values.

In this specification, regarding the content of each component in the composition, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, it refers to the content of the multiple substances present in the composition. Total amount. In addition, unless otherwise stated, the exemplified materials may be used individually or in combination of two or more types. In addition, among the numerical ranges described in stages in this specification, the upper limit or lower limit of the numerical range in a certain stage may be replaced by the upper limit or lower limit of the numerical range in another stage. In addition, in the numerical range described in this specification, the upper limit value or the lower limit value of this numerical range can be replaced with the value shown in an Example.

(semiconductor device)

FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor device having a dolmen structure. The semiconductor device 100 shown in the figure includes a substrate 10, a wafer T1 (first wafer) arranged on the surface of the substrate 10, a plurality of supporting sheets Dc arranged on the surface of the substrate 10 and surrounding the wafer T1, and a plurality of supporting sheets Dc arranged on the surface of the substrate 10. The wafer T2 (two wafers included) above the wafer T1, the adhesive sheet Tc sandwiched between the wafer T2 and the plurality of support sheets Dc, the wafer T3 and the wafer T4 laminated on the wafer T2, and the wafer T2 on the surface of the substrate 10 A plurality of wires w for electrically connecting electrodes (not shown) to wafers T1 to T4 respectively; and a sealing material 50 filled in the gap between wafer T1 and wafer T2.

In this embodiment, a dolmen structure is formed on the substrate 10 by a plurality of support sheets Dc, wafer T2, and an adhesive sheet Tc located between the support sheet Dc and wafer T2. The wafer T1 and the adhesive sheet Tc are separated. By appropriately setting the thickness of the support piece Dc, it is possible to secure the wires for connecting the upper surface of the chip T1 and the substrate 10 w space. By separating the wafer T1 and the adhesive sheet Tc, it is possible to prevent the short circuit of the wire w caused by the upper part of the wire w connected to the wafer T1 coming into contact with the wafer T2. In addition, since there is no need to bury conductive wires in the adhesive sheet Tc in contact with the wafer T2, there is an advantage that the adhesive sheet Tc can be made thinner.

As shown in FIG. 1 , the adhesive sheet Tc between the wafer T1 and the wafer T2 covers the area of the wafer T2 that faces the wafer T1 and extends continuously from the area to the peripheral side of the wafer T2 . That is, one adhesive sheet Tc covers the area of the wafer T2 and is sandwiched between the wafer T2 and a plurality of support sheets to bond them. In addition, FIG. 1 shows the form in which the adhesive sheet Tc is provided so as to cover the entire one surface (lower surface) of the wafer T2. However, since the adhesive sheet Tc may shrink during the manufacturing process of the semiconductor device 100, it only needs to cover substantially the entirety of one surface (lower surface) of the wafer T2. For example, there may be a portion of the adhesive sheet Tc on a portion of the periphery of the wafer T2. The area covered by the adhesive sheet Tc. The lower surface of wafer T2 in FIG. 1 corresponds to the back surface of the wafer. In recent years, the back surface of wafers is often formed with irregularities. Since the substantially entire back surface of the wafer T2 is covered with the adhesive sheet Tc, the generation of cracks or cracks in the wafer T2 can be suppressed.

The substrate 10 may be an organic substrate or a metal substrate such as a lead frame. In the substrate 10 , from the viewpoint of suppressing warpage of the semiconductor device 100 , the thickness of the substrate 10 is, for example, 90 μm to 300 μm, or may be 90 μm to 210 μm.

The chip T1 is, for example, a controller chip, which is adhered to the substrate 10 through the adhesive sheet T1c and is electrically connected to the substrate 10 through the wire w. The shape of the wafer T1 in plan view is, for example, a rectangle (square or rectangular). The length of one side of the wafer T1 is, for example, 5 mm or less, or may be 2 mm to 5 mm or 1 mm to 5 mm. The thickness of wafer T1 is e.g. It can be 10μm~150μm or 20μm~100μm.

The wafer T2 is, for example, a memory wafer, and is adhered to the support sheet Dc via the adhesive sheet Tc. When viewed from above, wafer T2 has a larger size than wafer T1. The shape of the wafer T2 in plan view is, for example, a rectangle (square or rectangular). The length of one side of the wafer T2 is, for example, 20 mm or less, or may be 4 mm to 20 mm or 4 mm to 12 mm. The thickness of the wafer T2 is, for example, 10 μm to 170 μm, or may be 20 μm to 120 μm. Furthermore, the wafer T3 and the wafer T4 are, for example, memory wafers, and are adhered to the wafer T2 via the adhesive sheet Tc. The length of one side of wafer T3 and wafer T4 only needs to be the same as that of wafer T2, and the thickness of wafer T3 and wafer T4 also needs to be the same as that of wafer T2.

The support sheet Dc functions as a spacer that forms a space around the wafer T1. The support sheet Dc is composed of a cured product of a thermosetting resin composition. Furthermore, as shown in FIG. 2(a) , two support pieces Dc (shape: rectangular) may be arranged at spaced apart positions on both sides of the wafer T1 , or as shown in FIG. 2(b) , One supporting piece Dc (shape: square, 4 pieces in total) is arranged at the position corresponding to the corner of the wafer T1. The length of one side of the support sheet Dc in plan view is, for example, 20 mm or less, or may be 1 mm to 20 mm or 1 mm to 12 mm. The thickness (height) of the support sheet Dc is, for example, 10 μm to 180 μm, or may be 20 μm to 120 μm.

<First Embodiment>

(How to manufacture the support sheet)

The manufacturing method of the support sheet of this embodiment includes the following steps.

(A) Prepare the laminated film 20 for supporting sheet formation (hereinafter, referred to as "laminated film" as appropriate). The step of layering a film 20"), which includes in order: a base film 1; an adhesive layer 2 having a first side f1 opposite to the base film 1 and a second side f2 on the opposite side; and a support sheet forming film D , arranged so as to cover the central portion of the second surface f2 of the adhesive layer 2 (refer to FIG. 3(a) and FIG. 3(b) ); (B) by forming the supporting sheet forming film D into a single piece, The step of forming a plurality of support sheets on the second surface f2 of the adhesive layer 2 (refer to (b) of Figure 5); (C) in a state where a plurality of needles N are used to push the support sheets upward from the base film side. The step of picking up the support sheet Da (see (b) of FIG. 6 ).

In addition, the support sheet Dc shown in FIG. 1 is a support sheet after hardening of a thermosetting resin composition. On the other hand, the support sheet Da is a support sheet in a state before the thermosetting resin composition is completely cured.

[(A) Step]

The laminated film 20 includes a base film 1, an adhesive layer 2, and a support sheet forming film D. The base film 1 is, for example, a polyethylene terephthalate film (PET (polyethylene terephthalate) film) or a polyolefin film. As the base film 1, a film having heat shrinkability can be used. The adhesive layer 2 has a first surface f1 facing the base film 1 and a second surface f2 on the opposite side. The adhesive layer 2 is formed into a circular shape by punching or the like (see (a) of FIG. 3 ). The adhesive layer 2 is composed of a pressure-sensitive adhesive. Furthermore, the adhesive layer 2 may or may not contain a photoreactive resin having a carbon-carbon double bond. For example, the adhesive layer 2 can reduce the adhesiveness of a predetermined area by irradiating the area with ultraviolet rays. For example, a photoreactive resin having a carbon-carbon double bond can also remain.

The film D for forming the support sheet is formed into a circular shape by punching etc. and has relatively strong adhesion. The diameter of layer 2 is small (see (a) of Fig. 3). The support sheet forming film D is composed of a thermosetting resin composition. The thermosetting resin composition constituting the film D for forming the support sheet passes through a semi-hardened (B-stage) state and can become a fully-cured (C-stage) state by subsequent hardening treatment. The thermosetting resin composition contains an epoxy resin, a hardener, an elastomer (such as an acrylic resin), and if necessary, an inorganic filler, a hardening accelerator, and the like. Details of the thermosetting resin composition constituting the support sheet forming film D will be described later.

The laminated film 20 can be produced, for example, by laminating a first laminated film having a base film 1 and an adhesive layer 2 on the surface of the base film 1 and a second laminated film. The two-layered film has a cover film 3 and a supporting sheet forming film D on the surface of the cover film 3 (see FIG. 4 ). The first laminated film can be obtained through the following steps: a step of forming an adhesive layer on the surface of the base film 1 by coating, and a step of processing the adhesive layer into a predetermined shape (for example, a circle) by punching or the like. . The second laminated film can be obtained through the following steps: forming a film for forming a support sheet by coating on the surface of the cover film 3 (for example, a PET film or a polyethylene film); and punching the support sheet or the like. A step of processing the film into a predetermined shape (for example, a circle). When using the laminated film 20, the cover film 3 is peeled off at an appropriate timing.

[(B) Step]

As shown in (a) of FIG. 5 , the cutting ring DR is attached to the laminated film 20 . That is, the dicing ring DR is attached to the peripheral region 2a of the adhesive layer 2, and the support sheet forming film D is arranged inside the dicing ring DR. The supporting sheet forming film D is separated into individual pieces by cutting (see (b) of FIG. 5 ). Thereby, the self-supporting sheet forming film D can be formed Get multiple support titles. Thereafter, as shown in (c) of FIG. 5 , the inner region 1 a of the dicing ring DR in the base film 1 is pushed up by the ring R, thereby imparting tension to the base film 1 . Thereby, the distance between adjacent support pieces Da can be widened. Furthermore, it is preferable that the incision for singulation is formed to the outer edge of the supporting sheet forming film D. The diameter of the supporting sheet forming film D may be, for example, 300 mm to 310 mm or 300 mm to 305 mm. The shape of the supporting sheet forming film D in plan view is not limited to the circular shape shown in (a) of FIG. 3 , and may be rectangular (square or rectangular).

When a heat-shrinkable film is used as the base film 1 , after step (B), the inner region 1 a of the dicing ring DR in the base film 1 may be heated to shrink the inner region 1 a. (a) of FIG. 6 is a cross-sectional view schematically showing a state in which the inner region 1a is heated by blowing air from the heater H. By shrinking the inner region 1 a in an annular shape and applying tension to the base film 1 , it is possible to maintain a state in which the distance between adjacent support sheets Da is widened. This can further suppress the occurrence of pickup errors and improve the visibility of the support piece Da in the pickup step.

[(C) Step]

As shown in (b) of FIG. 6 , the support piece Da is pushed up by a pushing device provided with a plurality of needles N. As the push-up device, for example, DB-830 Plus (trade name) manufactured by FASFORD TECHNOLOGY can be used. By pushing up the support sheet Da from the base film 1 side with a plurality of needles N, a pressing force can be locally applied to the interface between the adhesive layer 2 and the support sheet Da (see FIG. 7 ). Thereby, the interface peeling between the two proceeds efficiently, and excellent pick-up properties can be achieved. Furthermore, from the viewpoint that the traces of self-inhibition caused by push-up remain to support the chip Da, the tip of needle N can It can be curved or flat.

The support piece Da in the pushed-up state is extracted and picked up with the adsorption chuck C. As the suction chuck C, for example, RUBBER TIP RHAH-CA010005001 (trade name) manufactured by MICRO-MECHANICS can be used. Furthermore, the curing reaction of the thermosetting resin may be advanced by heating the support sheet forming film D before cutting or the support sheet Da before pushing up. When picking up, by appropriately hardening the support sheet Da, better pick-up properties can be achieved.

(Method for manufacturing semiconductor device)

A method of manufacturing the semiconductor device 100 will be described. The manufacturing method of this embodiment includes the following steps.

(D) The step of arranging the first wafer T1 on the substrate 10; (E) The step of arranging a plurality of supporting sheets Da on the substrate 10 around the first wafer T1 (see FIG. 8); (F) Preparing for tape bonding The step of forming a wafer T2a with an adhesive sheet, which includes a second wafer T2 and an adhesive sheet Ta provided on one surface of the second wafer T2 (see FIG. 9); (G) by The step of arranging the wafer T2a with the adhesive sheet on the surface of the plurality of support sheets Dc to construct a dolmen structure (see FIG. 10 ); (H) the step of sealing the gap between the wafer T1 and the wafer T2 with the sealing material 50 ( Refer to Figure 1).

[(D) Step]

Step (D) is a step of arranging the first wafer T1 on the substrate 10 . For example, First, the wafer T1 is placed at a predetermined position on the substrate 10 via the adhesive layer T1c. Then, the chip T1 is electrically connected to the substrate 10 through the wire w. Step (D) may be a step performed before step (E), or may be performed before step (A), between step (A) and step (B), between step (B) and step (C), or Between step (C) and step (E).

[(E) Step]

Step (E) is a step of arranging a plurality of supporting sheets Da on the substrate 10 and around the first wafer T1. The structure 30 shown in Fig. 8 is produced through the above steps. The structure 30 includes the substrate 10 , the wafer T1 arranged on the surface of the substrate 10 , and a plurality of supporting sheets Da. The configuration of supporting chip Da can be done by crimping process. The pressure bonding treatment is preferably performed for 0.5 seconds to 3.0 seconds under conditions of 80°C to 180°C and 0.01MPa to 0.50MPa, for example. Furthermore, the support piece Da may be completely hardened at the time of step (E) to become the support piece Dc, or may not be completely hardened at this time. The support piece Da is preferably completely hardened to become the support piece Dc before the start of step (G).

[(F) Step]

Step (F) is a step of preparing the wafer T2a with the adhesive sheet shown in FIG. 9 . The wafer T2a with an adhesive sheet includes a wafer T2 and an adhesive sheet Ta provided on one surface of the wafer T2. The wafer T2a with the adhesive sheet can be obtained by using, for example, a semiconductor wafer and a dicing-bonding integrated film, and going through a cutting step and a picking up step.

[(G) Step]

The step (G) is a step of arranging the wafer T2a with the adhesive sheet above the wafer T1 so that the adhesive sheet Ta contacts the upper surfaces of the plurality of support sheets Dc. Tool Specifically, the wafer T2 is press-bonded to the upper surface of the support sheet Dc via the adhesive sheet Ta. This pressure bonding process is preferably performed under conditions of 80°C to 180°C and 0.01MPa to 0.50MPa for 0.5 seconds to 3.0 seconds, for example. Then, the adhesive sheet Ta is hardened by heating. This hardening treatment is preferably performed for 5 minutes or more under conditions of 60°C to 175°C and 0.01MPa to 1.0MPa, for example. Thereby, the adhesive sheet Ta hardens and becomes the adhesive sheet Tc. Through this step, a dolmen structure is constructed on the substrate 10 (see FIG. 10 ). By separating the wafer T1 from the wafer T2a with the adhesive sheet, it is possible to prevent the short circuit of the wire w caused by the upper part of the wire w coming into contact with the wafer T2. In addition, since there is no need to bury wires in the adhesive sheet Ta in contact with the wafer T2, there is an advantage that the adhesive sheet Ta can be made thinner.

After step (G) and before step (H), wafer T3 is placed on wafer T2 via an adhesive sheet, and wafer T4 is further placed on wafer T3 via an adhesive sheet. The adhesive sheet only needs to be the same thermosetting resin composition as the above-mentioned adhesive sheet Ta, and is cured by heating to become the adhesive sheet Tc (see FIG. 1 ). On the other hand, the wafer T2, the wafer T3, and the wafer T4 are electrically connected to the substrate 10 through wires w. Furthermore, the number of wafers stacked on the wafer T1 is not limited to three in this embodiment, and may be set appropriately.

[(H) step]

Step (H) is a step of sealing the gap and the like between the wafer T1 and the wafer T2 with the sealing material 50 . Through this step, the semiconductor device 100 shown in FIG. 1 is completed.

(Thermosetting resin composition constituting the support sheet forming film)

As described above, the thermosetting resin composition constituting the support sheet forming film D contains There are epoxy resin, hardener and elastomer, and if necessary, it also contains inorganic fillers and hardening accelerators. According to research by the present inventors, it is preferable that the support sheet Da and the hardened support sheet Dc have the following characteristics.

Characteristic 1: When the support sheet Da is thermocompression-bonded at a predetermined position of the substrate 10, positional deviation is not likely to occur (the melt viscosity of the support sheet Da at 120°C is, for example, 4300 Pa.s ~ 50000 Pa.s or 5000 Pa.s ~ 40000 Pa.s) ;Characteristic 2: The support sheet Dc exerts stress relaxation properties in the semiconductor device 100 (the thermosetting resin composition contains an elastomer (rubber component));Characteristic 3: Adhesion strength to the adhesive sheet Tc of the wafer with the adhesive sheet Sufficiently high (the grain shear strength of the support sheet Dc relative to the adhesive sheet Tc is, for example, 2.0Mpa~7.0Mpa or 3.0Mpa~6.0Mpa); Characteristic 4: The shrinkage rate associated with hardening is sufficiently small; Characteristic 5: The support sheet Da has good visibility with a camera in the pickup step (the thermosetting resin composition contains a colorant, for example); Characteristic 6: The support sheet Dc has sufficient mechanical strength.

[Epoxy resin]

The epoxy resin is not particularly limited as long as it has a connecting function for curing. Can be used: bifunctional epoxy resins such as bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, and bisphenol S-type epoxy resin; phenol novolak-type epoxy resin, cresol novolak-type epoxy resin, etc. Novolak type epoxy resin, etc. In addition, generally known resins such as polyfunctional epoxy resin, glycidyl amine type epoxy resin, heterocycle-containing epoxy resin, or alicyclic epoxy resin can be used. These can be used individually or in combination. Two or more types.

[hardener]

Examples of the curing agent include phenol resins, ester compounds, aromatic amines, aliphatic amines and acid anhydrides. Among them, from the viewpoint of realizing high grain shear strength, phenol resin is preferred. Examples of commercially available phenolic resins include: LF-4871 (trade name, BPA novolak type phenolic resin) manufactured by DIC Co., Ltd., HE manufactured by AIR WATER Co., Ltd. -100C-30 (trade name, phenyl aralkyl type phenol resin), Phenolite KA and TD series manufactured by DIC Co., Ltd., Milex manufactured by Mitsui Chemicals Co., Ltd. ) series (such as MEHC-7800-4S), JDPP series manufactured by JFE Chemical Co., Ltd. These may be used individually by 1 type, and may use 2 or more types together.

Regarding the blending amounts of the epoxy resin and the phenol resin, from the viewpoint of achieving high grain shear strength, the equivalent ratio of the epoxy equivalent and the hydroxyl equivalent is preferably 0.6 to 1.5, more preferably 0.7 to 1.4, and further The best value is 0.8~1.3. By setting the blending ratio within the above range, it is easy to achieve sufficiently high levels of both hardenability and fluidity.

[Elastomer]

Examples of the elastomer include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, and butene. Dianhydride modified polybutadiene, phenol modified polybutadiene and carboxyl Modified acrylonitrile.

From the viewpoint of realizing high grain shear strength, the elastomer is preferably an acrylic resin, and more preferably, glycidyl acrylate, glycidyl methacrylate, etc. have an epoxy group or a glycidyl group. Acrylic resins such as epoxy group-containing (meth)acrylic copolymers obtained by polymerizing functional monomers with crosslinkable functional groups. Among the acrylic resins, an epoxy group-containing (meth)acrylate copolymer and an epoxy group-containing acrylic rubber are preferred, and an epoxy group-containing acrylic rubber is more preferred. Epoxy group-containing acrylic rubber is a rubber with an epoxy group that is mainly composed of acrylate, copolymers such as butyl acrylate and acrylonitrile, and copolymers such as ethyl acrylate and acrylonitrile. Furthermore, the acrylic resin may have not only an epoxy group but also a crosslinking functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.

Commercially available acrylic resins include SG-70L, SG-708-6, WS-023EK30, SG-280EK23, and SG-P3 solvent-modified products (trade names) manufactured by Nagase ChemteX Co., Ltd. , acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent is cyclohexanone), etc.

From the viewpoint of realizing high grain shear strength, the glass transition temperature (Tg) of the acrylic resin is preferably -50°C to 50°C, more preferably -30°C to 30°C. From the viewpoint of realizing high grain shear strength, the weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3 million, more preferably 500,000 to 2 million. Here, Mw refers to a value measured by gel permeation chromatography (GPC) and converted using a standard curve based on standard polystyrene. Furthermore, by using acrylic resin with a narrow molecular weight distribution, it has the ability to form highly elastic The tendency of sexual adhesive tablets.

From the viewpoint of realizing high grain shear strength, the amount of acrylic resin contained in the thermosetting resin composition is preferably 10 parts by mass based on 100 parts by mass of the total of epoxy resin and epoxy resin hardener. parts to 200 parts by mass, preferably 20 parts to 100 parts by mass.

[Inorganic filler]

Examples of the inorganic filler include: aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, nitride Boron, crystalline silica and amorphous silica. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of realizing high grain shear strength, the average particle diameter of the inorganic filler is preferably 0.005 μm to 1.0 μm, more preferably 0.05 μm to 0.5 μm. From the viewpoint of achieving high grain shear strength, the surface of the inorganic filler is preferably chemically modified. (Supplementary) Materials suitable for chemical surface modification include silane coupling agents. Examples of types of functional groups of the silane coupling agent include vinyl groups, acryl groups, epoxy groups, mercapto groups, amino groups, diamine groups, alkoxy groups, and ethoxy groups.

From the viewpoint of achieving high grain shear strength, the content of the inorganic filler is preferably 20 to 200 parts by mass, more preferably 30 parts by mass, based on 100 parts by mass of the resin component of the thermosetting resin composition. ~100 parts by mass.

[hardening accelerator]

Examples of the hardening accelerator include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. To achieve high grain From the viewpoint of shear strength, an imidazole compound is preferred. Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. These may be used individually by 1 type, and may use 2 or more types together.

From the viewpoint of achieving high grain shear strength, the content of the hardening accelerator in the thermosetting resin composition is preferably 0.04 parts by mass to 100 parts by mass in total of the epoxy resin and the epoxy resin hardener. 3 parts by mass, preferably 0.04 parts by mass to 0.2 parts by mass.

<Second Embodiment>

The second embodiment of the manufacturing method of the support sheet Da will be described. In the first embodiment, a form in which a plurality of needles are used in step (C) is exemplified. However, a member having a flat front end surface may be used instead of the plurality of needles. Hereinafter, differences from the first embodiment will be mainly described.

The adhesive layer 2 in this embodiment is composed of an ultraviolet curable adhesive. That is, the adhesive layer 2 has the property of reducing adhesiveness by irradiation with ultraviolet rays. At this time, as shown in FIG. 5( b ), the film D for forming a support sheet is cut to obtain a plurality of support sheets Da, and then the adhesive layer 2 is irradiated with ultraviolet rays. Thereby, the adhesive force between the adhesive layer 2 and the support sheet Da is reduced. After ultraviolet irradiation, the ring R and the heater H are used to apply tension to the base film 1, thereby widening the distance between the adjacent support sheets Da (see FIG. 5(c) and FIG. 6(a) ).

In step (C) of this embodiment, as shown in FIG. 11 , the support piece Da is pushed up by a pushing device provided with the member P having the flat front end surface F. as on As the pushing device, for example, DB-830 plus (trade name) manufactured by FASFORD TECHNOLOGY can be used. Furthermore, the three-stage push-up device shown in Figure 1 (a) to Figure 12 (c) can be used to push up the support piece Da. The three-stage push-up device includes a first cylindrical member P1, a second cylindrical member P2 accommodated in the first cylindrical member P1, and a member P accommodated in the second cylindrical member P2. These front end surfaces F1, F2, and F are all flat and become the same plane when the front end surface F1 of the first cylindrical member P1 is in contact with the base film 1 (see (a) of FIG. 12 ). Thereafter, the second cylindrical member P2 protrudes from the first cylindrical member P1, thereby further pushing up the support piece Da (see (b) of FIG. 12 ). Next, the member P protrudes from the second cylindrical member P2, thereby further pushing up the center portion of the support piece Da (see (c) of FIG. 12 ). By pushing up the support sheet Da from the base film 1 side with a flat surface in this way, the edge of the support sheet Da can be effectively peeled off from the adhesive layer 2, thereby achieving excellent pick-up properties.

The method of pushing up the supporting piece Da by the three-stage pushing device is not limited to the above method. For example, first, in a state where the front end surface F1, the front end surface F2, and the front end surface F are on the same plane, the support sheet Da is pushed up via the base film 1. Then, after lowering the first cylindrical member P1, the second cylindrical member P2 may be lowered. According to this method, the supporting piece Da can be picked up with a relatively low thrust force. Furthermore, the number of stages of the push-up device is not limited to three stages, as long as there are at least two stages. That is, the multi-stage push-up device only needs to include a cylindrical member and a columnar member P accommodated in the cylindrical member, and these may be independently driven in the up-down direction.

<Third Embodiment>

Hereinafter, a third embodiment of the manufacturing method of the support sheet Da will be described. In the above embodiment, the case where the supporting sheet Da is formed by completely cutting the supporting sheet forming film D is exemplified. However, the supporting sheet forming film D may be half-cut in step (B). , the base film 1 is expanded by cooling to form the support sheet Da. Hereinafter, differences from the above-described embodiment will be mainly described.

After the dicing ring DR is attached to the laminated film 20 (see FIG. 5(a) ), as shown in FIG. 13(a) , the slit G is formed halfway in the thickness direction of the supporting sheet forming film D. Thereby, the laminated film 25 which has the half-cut supporting sheet forming film D can be obtained. The incision G may be formed by a blade or a laser, for example. When the thickness of the support sheet forming film D is 100, the depth of the cutout G may be 25 to 50 angstroms, or may be 30 to 40 angstroms. The cutouts G are formed in a lattice shape (see (b) of FIG. 13 ). In addition, the pattern of the incisions G is not limited to a grid shape, as long as it is a form corresponding to the shape of the support sheet Da.

Thereafter, the supporting sheet forming film D is separated into individual pieces by cooling and expansion under temperature conditions of -15°C to 0°C, for example. Thereby, a plurality of support sheets Da can be obtained from the film D for forming a support sheet. What is necessary is to apply tension to the base film 1 by pushing up the inner region 1a of the dicing ring DR in the base film 1 with the ring R (see (c) of FIG. 5 ). In the step (B), after half-cutting the film D for forming the supporting sheet, the film D for forming the supporting sheet is separated into individual pieces by cooling and expanding. Therefore, the edge of the supporting sheet Da does not enter the adhesive layer 2, so it is possible to achieve excellent performance. pick-up properties.

The embodiments of the present disclosure have been described in detail above, but the present invention is not limited to the embodiments. For example, in the first embodiment, a specific There is a laminated film 20 with a pressure-sensitive adhesive layer 2, but the adhesive layer 2 may also be an ultraviolet curable type. When the adhesive layer 2 of the third embodiment is of the ultraviolet curable type, as described above, the edge of the support sheet Da does not enter the adhesive layer 2. Therefore, even if the adhesive layer 2 is cured by ultraviolet irradiation, excellent pickup can be achieved. sex.

In the second embodiment, the laminated film 20 having the ultraviolet curable adhesive layer 2 is exemplified, but the adhesive layer 2 may be a pressure-sensitive type. Furthermore, the pressure-sensitive adhesive layer may or may not contain a photoreactive resin with carbon-carbon double bonds. For example, the adhesive layer can reduce the adhesiveness of a predetermined area by irradiating the area with ultraviolet rays. For example, a photoreactive resin having a carbon-carbon double bond can also remain.

In the embodiment, as shown in FIG. 3( b ), the support sheet forming laminated film 20 including the support sheet forming film D composed of a thermosetting resin layer is exemplified. However, the support sheet forming laminated film It may also consist of a layer obtained by hardening at least part of the thermosetting resin layer. In addition, the laminated film for forming a support sheet may include a multilayer film including a thermosetting resin layer and a resin layer or metal layer having higher rigidity than the thermosetting resin layer. The laminated film 20A for forming a support sheet shown in FIG. 14(a) has a double-layer film D2 (film for forming a support sheet) having a thermosetting resin layer 5 and a relatively thermosetting resin layer having Higher rigidity resin layer 6. That is, in the laminated film 20A for forming a support sheet, the thermosetting resin layer 5 is arranged between the adhesive layer 2 and the outermost resin layer 6 . In addition, the thermosetting resin layer 5 is composed of the thermosetting resin composition constituting the support sheet forming film D of the first embodiment. The thickness of the resin layer 6 is, for example, 5 μm to 100 μm, or may be 10 μm to 90 μm or 20 μm to 80 μm. The resin layer 6 is, for example, a polyimide layer.

The laminated film 20B for forming a support sheet shown in FIG. 14(b) has a three-layer film D3 (film for forming a support sheet) including a resin layer 6 having higher rigidity than a thermosetting resin layer. , and two layers of thermosetting resin layer 5a and thermosetting resin layer 5b sandwiching resin layer 6. In the support sheet forming laminated film 20B, three layers of film D3 are arranged on the surface of the adhesive layer 2 .

The double-layer film D2 may be completely cut off, for example, by a blade or a laser, as in the first embodiment, or may be divided into individual pieces by cooling and expansion after half-cutting, as in the third embodiment. (a) of FIG. 15 is a cross-sectional view schematically showing a state in which the double-layer film D2 is cut in half. As shown in (a) of FIG. 15 , the resin layer 6 of the double-layer film D2 is cut and the incision G is formed halfway in the thickness direction of the thermosetting resin layer 5 . Thereby, the laminated film 25A which has the half-cut double-layer film D2 can be obtained. The resin layer 6 is divided into individual pieces to form a plurality of resin sheets 6p. When the thickness of the thermosetting resin layer 5 is 100, the notch G may cut the thermosetting resin layer 5 with a thickness of 10 to 75 (more preferably 25 to 50).

The three-layer film D3 can be completely cut off by, for example, a blade or a laser, as in the first and second embodiments, or it can be individually expanded by cooling after half-cutting, as in the third embodiment. Fragmentation. (b) of FIG. 15 is a cross-sectional view schematically showing a state in which the three-layer film D3 is cut into half. As shown in FIG. 15(b) , the thermosetting resin layer 5a and the resin layer 6 of the three-layer film D3 may be cut and the incision G may be formed halfway in the thickness direction of the thermosetting resin layer 5b. Thereby, the laminated film 25B which has the half-cut three-layer film D3 can be obtained. The thermosetting resin layer 5a is singulated to form a plurality of adhesive sheets 5p, and the resin layer 6 is singulated to form a plurality of adhesive sheets 5p. into multiple resin sheets 6p. When the thickness of the thermosetting resin layer 5b is 100, the notch G may cut the thermosetting resin layer 5b with a thickness of 10 to 75 (more preferably 25 to 50).

The laminated films 20A and 20B for forming a support sheet include a resin layer 6 having higher rigidity than the thermosetting resin layer 5 , so that thermosetting properties are not performed even after being separated into individual pieces by cutting. The thermal hardening treatment of the resin layer 5 can also achieve excellent pickup properties.

In the support sheet forming laminated films 20A and 20B, a metal layer (for example, a copper layer or an aluminum layer) having higher rigidity than the thermosetting resin layer may be used instead of the resin layer 6 . The thickness of the metal layer is, for example, 5 μm to 100 μm, or may be 10 μm to 90 μm or 20 μm to 80 μm. By including the supporting sheet forming laminated film 20A and the supporting sheet forming laminated film 20B with a metal layer, in addition to excellent pick-up properties, the optical contrast between the resin material and the metal material can also realize the pick-up step. Excellent visibility. Furthermore, when the laminated film 20A for forming the support sheet and the laminated film 20B for forming the support sheet have a metal layer, the edges of the metal sheet (the metal layer is formed into individual pieces) are easily adhered due to the ductility of the metal. Layer 2. When the adhesive layer 2 is a pressure-sensitive type, the step of hardening the adhesive layer 2 by ultraviolet irradiation is not performed between the singulation step and the picking-up step. Therefore, even if the edge of the metal sheet temporarily enters the state of the adhesive layer 2 It can also achieve excellent pick-up performance.

[Example]

The present disclosure will be described below through examples, but the invention is not limited to based on these examples.

(Preparation of Varnish A)

Varnish A for supporting a sheet-forming film was prepared using the following materials.

． Epoxy resin 1: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., cresol novolak type epoxy resin, solid at 25°C) 5.4 parts by mass

． Epoxy resin 2: YDF-8170C: (trade name, manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., liquid bisphenol F type epoxy resin, liquid at 25°C) 16.2 parts by mass

． Phenolic resin (hardener): LF-4871: (trade name, manufactured by DIC Co., Ltd., BPA novolac type phenolic resin) 13.3 parts by mass

． Inorganic filler: SC2050-HLG: (trade name, manufactured by ADMATECH Co., Ltd., silica filler dispersion, average particle size: 0.50 μm) 49.8 parts by mass

． Elastomer: SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) 14.9 parts by mass

． Coupling agent 1: A-189: (trade name, manufactured by General Electric (GE) Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.1 part by mass

． Coupling agent 2: A-1160: (trade name, manufactured by General Electric (GE) Toshiba Corporation, γ-ureidopropyltriethoxysilane) 0.3 parts by mass

． Hardening accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.05 parts by mass

． Solvent: cyclohexane

(Preparation of Varnish B)

Varnish B for supporting a sheet-forming film was prepared using the following materials.

． Epoxy resin: YDCN-700-10: (trade name, manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., cresol novolak type epoxy resin, solid at 25°C) 13.2 parts by mass

． Phenolic resin (hardener): HE-100C-30: (trade name, manufactured by AIR WATER Co., Ltd., phenyl aralkyl type phenol resin) 11.0 parts by mass

． Inorganic filler: Aerosil R972: (trade name, manufactured by Japan Aerosil Co., Ltd., silica, average particle size: 0.016 μm) 7.8 parts by mass

． Elastomer: SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone) 66.4 parts by mass

． Coupling agent 1: A-189: (trade name, manufactured by General Electric (GE) Toshiba Corporation, γ-mercaptopropyltrimethoxysilane) 0.4 parts by mass

． Coupling agent 2: A-1160: (trade name, manufactured by General Electric (GE) Toshiba Corporation, γ-ureidopropyltriethoxysilane) 1.15 parts by mass

． Hardening accelerator: Curezol 2PZ-CN: (trade name, manufactured by Shikoku Chemical Industry Co., Ltd., 1-cyanoethyl-2-phenylimidazole) 0.03 parts by mass

． Solvent: cyclohexane

<Example 1A>

As mentioned above, cyclohexane was used as a solvent, and the solid content ratio of the varnish A was adjusted to 40 mass %. Use a 100-mesh filter to filter Varnish A while vacuuming Defoaming. As a film to which the varnish A is applied, a polyethylene terephthalate (PET) film (thickness: 38 μm) subjected to a release treatment was prepared. The varnish A after vacuum degassing was applied to the release-treated surface of the PET film. The applied varnish A was heated and dried in two stages of 90°C for 5 minutes and then 140°C for 5 minutes. In this way, the thermosetting resin layer A in the B-stage state (semi-cured state) was produced on the surface of the PET film.

A laminated film with a pressure-sensitive adhesive layer was produced according to the following procedure. For adhesives, an acrylic copolymer can be obtained by solution polymerization. The acrylic copolymer uses 2-ethylhexyl acrylate and methyl methacrylate as main monomers, and uses hydroxyethyl acrylate and acrylic acid as functional base monomer. The synthesized acrylic copolymer has a weight average molecular weight of 400,000 and a glass transition temperature of -38°C. An adhesive solution containing 10 parts by mass of a polyfunctional isocyanate cross-linking agent (trade name Mytech NY730-T, manufactured by Mitsubishi Chemical Co., Ltd.) was prepared and desorbed on the surface based on 100 parts by mass of the acrylic copolymer. The adhesive is applied and dried on mold-treated polyethylene terephthalate (thickness 25 μm) so that the thickness of the adhesive when dried is 10 μm. Furthermore, a 100 μm polyolefin base material composed of polypropylene/vinyl acetate/polypropylene was laminated on the adhesive surface. The adhesive film was left at room temperature for 2 weeks to fully age, thereby obtaining a cutting tape.

The thermosetting resin layer A having a thickness of 50 μm was heated at 110° C. for 1 hour and then cured by heating at 130° C. for 3 hours to obtain the cured resin layer A. Use a rubber roller to bond the hardened resin layer A to the adhesive layer of the cutting tape on a 70° C. hot plate. Through this step, a laminated body of the supporting sheet forming film and the dicing tape is obtained.

<Example 2A>

Instead of heating the thermosetting resin layer A at 110°C for 1 hour and then heating at 130°C for 3 hours, the thermosetting resin layer A is cured by heating at 110°C for 2 hours, in addition to In Example 1A, a laminated body of a support sheet forming film and a dicing tape was obtained in the same manner.

<Example 3A>

Using varnish B instead of varnish A, a thermosetting resin layer B is formed on the surface of the PET film, and the thermosetting resin layer B is bonded to the adhesive layer of the dicing tape using a rubber roller on a hot plate at 70°C. A polyimide film (thickness: 25 μm) was bonded to the thermosetting resin layer B using a rubber roller. Through this step, a laminated body of the supporting sheet forming film and the dicing tape is obtained.

The film for forming a support sheet of Examples 1A to 3A was evaluated for pick-up properties. That is, a dicing ring was laminated on the dicing tape of the laminated body of Examples 1A to 3A under conditions of 70°C. Using a cutting machine, the film for supporting sheet formation was separated into individual pieces with a height of 55 μm. In this way, a support piece with a size of 10mm×10mm was obtained. After that, use a die bonding machine to pick up the support piece in the expanded state (expansion amount: 3mm). As the push-up jig, a push-up device with 9 needles (DB-830 plus (trade name) manufactured by FASFORD TECHNOLOGY) was used, and the condition was that the push-up speed was 10 mm. /sec and push-up height 350μm. When an attempt was made to pick up six support pieces in each of the Examples, all six support pieces could be picked up in any one of Example 1A to Example 3A.

<Example 1B>

In addition to replacing the pressure-sensitive adhesive layer, using a cutter with an ultraviolet curable adhesive layer Except for the diced tape, a laminated body of the supporting sheet forming film and the dicing tape was obtained in the same manner as in Example 1A.

A dicing tape with an ultraviolet curable adhesive layer was produced according to the following procedure. Using 83 parts by mass of 2-ethylhexyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 2 parts by mass of methacrylic acid as raw materials, using ethyl acetate as the solvent, a copolymer was obtained by solution free radical polymerization. 12 parts by mass of 2-methacryloyloxyethyl isocyanate and the acrylic copolymer were reacted to synthesize an ultraviolet reactive acrylic copolymer having a carbon-carbon double bond. In the reaction, 0.05 part of hydroquinone-monomethyl ether was used as a polymerization inhibitor. The weight average molecular weight of the synthesized acrylic copolymer was measured by GPC, and the result was 300,000 to 700,000. The acrylic copolymer thus obtained and 2.0 parts of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name: Coronate L) as a hardener in terms of solid content, Mix 0.5 parts of 1-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator to prepare a UV curable adhesive solution. This ultraviolet curable adhesive solution was applied and dried on a release film made of polyethylene terephthalate (thickness: 38 μm) so that the thickness after drying would be 10 μm. Then, a polyolefin film (thickness: 90 μm) subjected to corona discharge treatment on one side was bonded to the adhesive layer. The obtained laminated film was aged in a constant temperature bath at 40° C. for 72 hours to obtain a dicing tape.

<Example 2B>

A laminate of a support sheet forming film and a dicing tape was obtained in the same manner as in Example 2A, except that a dicing tape having an ultraviolet curable adhesive layer was used instead of the pressure-sensitive adhesive layer.

<Example 3B>

A laminate of a supporting sheet forming film and a dicing tape was obtained in the same manner as in Example 3A, except that a dicing tape having an ultraviolet curable adhesive layer was used instead of the pressure-sensitive adhesive layer.

The film for forming a support sheet of Examples 1B to 3B was evaluated for pick-up properties. That is, a dicing ring was laminated on the dicing tape of the laminated body of Examples 1B to 3B under conditions of 70°C. Using a cutting machine, the film for supporting sheet formation was separated into individual pieces with a height of 55 μm. In this way, a support piece with a size of 10mm×10mm was obtained. Use a halogen lamp to irradiate ultraviolet rays from the side of the cutting tape to the adhesive layer of the support sheet under the conditions of 80mW/cm ² and 200mJ/cm ² . After that, use a die bonding machine to pick up the support piece in the expanded state (expansion amount: 3mm). As the push-up jig, a push-up device having a front end portion (DB- manufactured by FASFORD TECHNOLOGY) having a configuration (three-stage type) shown in Figures 12(a) to 12(c) was used. 830 Plus (plus) + (trade name)), the conditions are push-up speed 10mm/second and push-up height 1200μm. When an attempt was made to pick up six support pieces in each of the Examples, all six support pieces could be picked up in any one of Examples 1B to 3B.

[Industrial availability]

According to the present disclosure, a method for manufacturing a support sheet is provided, which can efficiently manufacture a support sheet used in manufacturing a semiconductor device having a dolmen structure, and can contribute to improvement in the production efficiency of semiconductor devices. In addition, according to the present disclosure, a method of efficiently manufacturing a semiconductor device having a dolmen structure using the support sheet is provided.

1: Base material film

2:Adhesive layer

C: Adsorption chuck

Da: support film

N: Needle

Claims (9)

A method for manufacturing a support sheet used in manufacturing a semiconductor device having a dolmen structure, the dolmen structure including: a substrate; a first wafer arranged on the substrate; A plurality of the supporting pieces are arranged on the substrate and surround the first wafer; and a second wafer is supported by a plurality of the supporting pieces and is configured to cover the first wafer, and the supporting pieces The manufacturing method of the sheet includes the following steps: (A) preparing a laminated film, which in order includes: a base film, an adhesive layer, and a supporting sheet forming film; (B) by forming the supporting sheet The step of forming a plurality of support sheets on the surface of the adhesive layer by forming a film into individual pieces; and (C) pushing the support upward from the base film side by a member having a flat front end surface. The step of picking up the support piece in the state of the piece is to use a three-stage push-up device to push up the support piece. The three-stage push-up device includes a first cylindrical member, a first cylindrical member, and a first cylindrical member. The second cylindrical member among the members, and the member accommodated in the second cylindrical member, the front end surface of the first cylindrical member, the front end surface of the second cylindrical member, and the front end surface of the member. The front end surfaces of the first cylindrical member are all flat and become the same plane when the front end surface of the first cylindrical member is in contact with the base film. The second cylindrical member protrudes from the first cylindrical member. This further pushes up the support piece, and the member protrudes from the second cylindrical member, thereby further pushing up the center portion of the support piece. The film for forming the support piece is made of a thermosetting resin layer. membrane composed of, or made of A film composed of layers in which at least part of a thermosetting resin layer is cured, or a multilayer film including a thermosetting resin layer, and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer. A method for manufacturing a support sheet used in manufacturing a semiconductor device having a dolmen structure, the dolmen structure including: a substrate; a first wafer arranged on the substrate; A plurality of the supporting pieces are arranged on the substrate and surround the first wafer; and a second wafer is supported by a plurality of the supporting pieces and is configured to cover the first wafer, and the supporting pieces The manufacturing method of the sheet includes the following steps: (A) preparing a laminated film, which in order includes: a base film, an adhesive layer, and a supporting sheet forming film; (B) by forming the supporting sheet The step of forming a plurality of support sheets on the surface of the adhesive layer by forming a film into individual pieces; and (C) pushing the support upward from the base film side by a member having a flat front end surface. In the step of picking up the support piece in the state of the piece, a three-stage push-up device is used to push up the support piece. The three-stage push-up device includes a first cylindrical member, and is accommodated in the first cylindrical member. The second cylindrical member among the members, and the member accommodated in the second cylindrical member, the front end surface of the first cylindrical member, the front end surface of the second cylindrical member, and the front end surface of the member. The front end surfaces of the first cylindrical member are both flat, and become the same plane when the front end surface of the first cylindrical member is in contact with the base film. In a state where the front end surface of the component and the front end surface of the component are on the same plane, the object is pushed up through the base film. The support sheet lowers the second cylindrical member after lowering the first cylindrical member, and the film for forming the support sheet is a film composed of a thermosetting resin layer, or a film made of a thermosetting resin layer. A film composed of layers in which at least part of the thermosetting resin layer is hardened, or a multilayer film including a thermosetting resin layer, and a resin layer or a metal layer having higher rigidity than the thermosetting resin layer. The manufacturing method of the support sheet according to claim 1 or claim 2, wherein the resin layer is a polyimide layer. The manufacturing method of the support sheet according to claim 1 or claim 2, wherein the metal layer is a copper layer or an aluminum layer. The method for manufacturing a support sheet according to claim 1 or claim 2, wherein the film for forming the support sheet is a film composed of a thermosetting resin layer, or a film formed by curing at least part of the thermosetting resin layer. The film composed of layers is formed, and the step (B) sequentially includes: the step of forming an incision halfway in the thickness direction of the film for forming the support sheet; and expanding the cooled state of the support sheet. The step of forming the membrane into individual pieces. The method for manufacturing a support sheet according to Claim 1 or 2, wherein the film for forming the support sheet includes a thermosetting resin layer and a resin layer having higher rigidity than the thermosetting resin layer, or A multilayer film of metal layers, and in the laminated film, the thermosetting resin layer is located between the resin layer and the adhesive layer, or between the metal layer and the adhesive layer, (B) The steps in sequence include: cutting the resin of the support sheet forming film layer or the metal layer and forming a notch halfway in the thickness direction of the thermosetting resin layer; and a step of dividing the cooled support sheet forming film into individual pieces by expansion. The manufacturing method of the support sheet according to claim 1 or claim 2, wherein the adhesive layer is of a pressure-sensitive type. The manufacturing method of the support sheet according to claim 1 or claim 2, wherein the adhesive layer is of ultraviolet curing type. A method of manufacturing a semiconductor device, which is a method of manufacturing a semiconductor device having a dolmen structure. The dolmen structure includes: a substrate; a first wafer arranged on the substrate; and a plurality of supporting pieces arranged on the substrate. on the substrate and around the first wafer; and a second wafer supported by a plurality of the support sheets and configured to cover the first wafer, wherein the manufacturing method of the semiconductor device includes the following steps: (D ) the step of arranging the first wafer on the substrate; (E) on the substrate and around the first wafer or around the area where the first wafer should be arranged, arranging by as requested The step of manufacturing the plurality of support sheets using the method for manufacturing a support sheet according to any one of claims 1 to 8; (F) the step of preparing a wafer with an adhesive sheet, the step of preparing a wafer with an adhesive sheet The wafer includes the second wafer and an adhesive sheet provided on one surface of the second wafer; and (G) the wafer with the adhesive sheet is arranged on the surface of a plurality of the support sheets. to build the dolmen structure.