JPWO2020217405A1 - - Google Patents
Info
- Publication number
- JPWO2020217405A1 JPWO2020217405A1 JP2021515424A JP2021515424A JPWO2020217405A1 JP WO2020217405 A1 JPWO2020217405 A1 JP WO2020217405A1 JP 2021515424 A JP2021515424 A JP 2021515424A JP 2021515424 A JP2021515424 A JP 2021515424A JP WO2020217405 A1 JPWO2020217405 A1 JP WO2020217405A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Dicing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023096871A JP2023112009A (ja) | 2019-04-25 | 2023-06-13 | ドルメン構造を有する半導体装置の製造方法、支持片の製造方法、及び支持片形成用積層フィルム |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/017715 WO2020217405A1 (ja) | 2019-04-25 | 2019-04-25 | ドルメン構造を有する半導体装置の製造方法、支持片の製造方法、及び支持片形成用積層フィルム |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023096871A Division JP2023112009A (ja) | 2019-04-25 | 2023-06-13 | ドルメン構造を有する半導体装置の製造方法、支持片の製造方法、及び支持片形成用積層フィルム |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020217405A1 true JPWO2020217405A1 (ja) | 2020-10-29 |
JP7482112B2 JP7482112B2 (ja) | 2024-05-13 |
Family
ID=72941149
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021515424A Active JP7482112B2 (ja) | 2019-04-25 | 2019-04-25 | ドルメン構造を有する半導体装置の製造方法、支持片の製造方法、及び支持片形成用積層フィルム |
JP2023096871A Withdrawn JP2023112009A (ja) | 2019-04-25 | 2023-06-13 | ドルメン構造を有する半導体装置の製造方法、支持片の製造方法、及び支持片形成用積層フィルム |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023096871A Withdrawn JP2023112009A (ja) | 2019-04-25 | 2023-06-13 | ドルメン構造を有する半導体装置の製造方法、支持片の製造方法、及び支持片形成用積層フィルム |
Country Status (5)
Country | Link |
---|---|
JP (2) | JP7482112B2 (ja) |
CN (1) | CN113614916A (ja) |
SG (1) | SG11202110100WA (ja) |
TW (1) | TWI844668B (ja) |
WO (1) | WO2020217405A1 (ja) |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222889A (ja) * | 2001-01-24 | 2002-08-09 | Nec Kyushu Ltd | 半導体装置及びその製造方法 |
JP2003124433A (ja) * | 2001-08-27 | 2003-04-25 | Samsung Electronics Co Ltd | マルチチップパッケージ |
JP2006005333A (ja) * | 2004-05-20 | 2006-01-05 | Toshiba Corp | 積層型電子部品とその製造方法 |
US20070181990A1 (en) * | 2006-02-03 | 2007-08-09 | Siliconware Precision Industries Co., Ltd. | Stacked semiconductor structure and fabrication method thereof |
US20080029885A1 (en) * | 2006-08-07 | 2008-02-07 | Sandisk Il Ltd. | Inverted Pyramid Multi-Die Package Reducing Wire Sweep And Weakening Torques |
US7859119B1 (en) * | 2003-11-10 | 2010-12-28 | Amkor Technology, Inc. | Stacked flip chip die assembly |
JP2012180442A (ja) * | 2011-03-01 | 2012-09-20 | Hitachi Chemical Co Ltd | 接着フィルム及びこの接着フィルムを有する半導体装置 |
JP2013131557A (ja) * | 2011-12-20 | 2013-07-04 | Toshiba Corp | 半導体装置およびその製造方法 |
US20130270717A1 (en) * | 2012-04-17 | 2013-10-17 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
JP2015176906A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2017515306A (ja) * | 2014-04-29 | 2017-06-08 | マイクロン テクノロジー, インク. | 支持部材を有する積層半導体ダイアセンブリと、関連するシステムおよび方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017203139A (ja) * | 2016-05-13 | 2017-11-16 | 日立化成株式会社 | 電子部品支持部材 |
US10103125B2 (en) * | 2016-11-28 | 2018-10-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chip package structure and method for forming the same |
US10276536B2 (en) * | 2017-04-28 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of chip package with fan-out structure |
-
2019
- 2019-04-25 JP JP2021515424A patent/JP7482112B2/ja active Active
- 2019-04-25 SG SG11202110100WA patent/SG11202110100WA/en unknown
- 2019-04-25 CN CN201980094133.0A patent/CN113614916A/zh active Pending
- 2019-04-25 WO PCT/JP2019/017715 patent/WO2020217405A1/ja active Application Filing
-
2020
- 2020-04-17 TW TW109113047A patent/TWI844668B/zh active
-
2023
- 2023-06-13 JP JP2023096871A patent/JP2023112009A/ja not_active Withdrawn
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222889A (ja) * | 2001-01-24 | 2002-08-09 | Nec Kyushu Ltd | 半導体装置及びその製造方法 |
JP2003124433A (ja) * | 2001-08-27 | 2003-04-25 | Samsung Electronics Co Ltd | マルチチップパッケージ |
US7859119B1 (en) * | 2003-11-10 | 2010-12-28 | Amkor Technology, Inc. | Stacked flip chip die assembly |
JP2006005333A (ja) * | 2004-05-20 | 2006-01-05 | Toshiba Corp | 積層型電子部品とその製造方法 |
US20070181990A1 (en) * | 2006-02-03 | 2007-08-09 | Siliconware Precision Industries Co., Ltd. | Stacked semiconductor structure and fabrication method thereof |
US20080029885A1 (en) * | 2006-08-07 | 2008-02-07 | Sandisk Il Ltd. | Inverted Pyramid Multi-Die Package Reducing Wire Sweep And Weakening Torques |
JP2012180442A (ja) * | 2011-03-01 | 2012-09-20 | Hitachi Chemical Co Ltd | 接着フィルム及びこの接着フィルムを有する半導体装置 |
JP2013131557A (ja) * | 2011-12-20 | 2013-07-04 | Toshiba Corp | 半導体装置およびその製造方法 |
US20130270717A1 (en) * | 2012-04-17 | 2013-10-17 | Samsung Electronics Co., Ltd. | Semiconductor package and method of fabricating the same |
JP2015176906A (ja) * | 2014-03-13 | 2015-10-05 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2017515306A (ja) * | 2014-04-29 | 2017-06-08 | マイクロン テクノロジー, インク. | 支持部材を有する積層半導体ダイアセンブリと、関連するシステムおよび方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2023112009A (ja) | 2023-08-10 |
CN113614916A (zh) | 2021-11-05 |
TWI844668B (zh) | 2024-06-11 |
SG11202110100WA (en) | 2021-11-29 |
KR20210146908A (ko) | 2021-12-06 |
JP7482112B2 (ja) | 2024-05-13 |
WO2020217405A1 (ja) | 2020-10-29 |
TW202107665A (zh) | 2021-02-16 |
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