KR20210103699A - Frame for semiconductor processing equipment comprising anodizing layer and antistatic layer and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a frame for semiconductor manufacturing equipment and a manufacturing method thereof, including a step of forming an anodized layer through anodizing treatment including a pretreatment process for degreasing and etching a frame body containing a metal material able to be subjected to anodizing treatment, an anodizing process, and a sealing process; and a step of coating an antistatic coating solution on the anodized layer and curing the same at room temperature to form an antistatic layer. The frame for semiconductor manufacturing equipment according to the present invention has excellent antistatic effect.

Description

Frame for semiconductor processing equipment comprising anodizing layer and antistatic layer and manufacturing method thereof

The present invention relates to a frame for semiconductor manufacturing equipment including an anodization layer and an antistatic layer, and a method for manufacturing the same, and more particularly, to a frame for semiconductor manufacturing equipment comprising an anodization layer and an antistatic layer having excellent antistatic effect, and a manufacturing method thereof is about

In a semiconductor manufacturing process, a wafer substrate is moved and fixed to a working stage. The working stage may be generally made of metal and ceramic materials. When the wafer substrate held by the handler is fixed and moved to the working stage, frictional static electricity is generated between the working stage and the wafer substrate.

In addition, a display manufacturing process, for example, a working stage of a dispenser for a flat panel display (FPD) generally adsorbs a display substrate in a vacuum method. The work stage in this case is also usually made of a metallic material, and when the display substrate is adsorbed on the work stage or when the display substrate that has been adsorbed and fixed is peeled off from the work stage, the work stage is electrically charged, charged to the substrate. In recent years, as the size of the display substrate increases, the amount of charge increases, and the problem of static electricity charging tends to increase.

A plurality of electronic components such as semiconductor devices are disposed on the wafer substrate or the display substrate. Accordingly, when static electricity is generated, it may be applied to the electronic component and transmitted to the internal circuit thereof. This results in fatal damage to the reliability of electronic components. In addition, due to static electricity charging, particles may be attached to the substrate or the substrate may be broken when the substrate is lifted up.

Conventionally, in order to prevent static electricity from being charged, an ionizer is installed on the work stage to neutralize the charging potential. However, in this case, lift-up is impossible and the ion wind from the ionizer does not reach, and even after lift-up, troubles such as discharge occur before the ion wind reaches the place where neutralization is required. It cannot solve the peeling electrification problem caused by

In order to solve this problem, it may be coated with a fluororesin (aka Teflon coating) to prevent static electricity in the work stage. Since the fluororesin has low adsorption energy with other substances, excellent non-adhesiveness, and small friction coefficient, the correlation with the glass substrate is small, and the amount of static electricity generated by peeling is small.

However, the Teflon coating method is relatively expensive to manufacture. In particular, in the case of a dispenser, as the size of the display substrate increases, the size of the work stage increases, thereby further increasing the manufacturing cost. In addition, the hardness of fluorine itself is low, the hardness of the coating film made of fluorine is low, and thus scratches are easily generated. Due to this, it is difficult to maintain the flatness of the scratched portion, which causes particles to be generated.

In addition, since fluorine has insulating properties, it is necessary to add a conductive filler such as carbon black or conductive polymer to have antistatic sheet resistance. There are problems in that the forming property is weak, an excessive amount of binder must be used, and it is difficult to form a thin film.

Korean Patent Publication No. 2019-0106515 Korean Patent Publication No. 2010-0109098

An object of the present invention is to provide a frame for semiconductor manufacturing equipment including an anodization layer and an antistatic layer having an excellent antistatic effect, and a method for manufacturing the same.

One embodiment of the present invention comprises the steps of: forming an anodization layer by an anodization treatment including a pretreatment process of degreasing and etching a frame body containing a metal material capable of anodization treatment, an anodization process, and a sealing process; and coating an antistatic coating solution on the anodization layer and curing at room temperature to form an antistatic layer.

The degreasing process may be performed at a temperature of 20° C. or higher for 10 to 20 minutes, and the etching process may be performed at a temperature of 35 to 45° C. for 0.5 to 5 minutes with a sodium hydroxide solution having a concentration of 5 to 20%.

The anodic oxidation process is a nitric acid treatment process performed for 5 to 10 seconds at a temperature of 10 to 30 ° C with a nitric acid solution of 20 to 40% concentration and a sulfuric acid solution of 15 to 25% concentration at a temperature of -10 to -6 ° C. It may include a light process carried out for 60 to 90 minutes, or a soft process carried out for 10 to 15 minutes or 30 to 40 minutes at a temperature of 18 to 22° C. with a sulfuric acid solution of 15 to 25% concentration.

According to one embodiment of the present invention, the nitric acid treatment process is performed two or more times, and between the nitric acid treatment process, 2 to 4% of acid ammonium fluoride (NH ₄ HF ₂ ) at a temperature of 35 to 45° C. A matte process may be performed for to 3 minutes.

The sealing process is managed at a pH of 6 to 8, and may be performed as a high temperature process performed at a temperature of 40 to 45° C. for 1 to 2 minutes or a low temperature process performed by water dissolution at a temperature of 20 to 30° C. for 5 to 10 minutes.

According to an embodiment of the present invention, before the antistatic layer forming step, a process of heat-treating the anodized layer to 100° C. or higher may be performed.

According to one embodiment of the present invention, the antistatic coating solution is a carbon nanotube 0.01 to 0.2 parts by weight, isopropyl alcohol (Isopropyl alcohol, IPA), methyl ethyl ketone (Methyl ethyl ketone, MEK), or toluene (Toluene) 98 to 99.9 parts by weight of a solvent selected from the group consisting of, 40 to 80 parts by weight of a room temperature curing binder resin, and 0.1 to 15 parts by weight of a curing agent.

According to an embodiment of the present invention, the room temperature curing may be performed for 12 to 24 hours.

According to an embodiment of the present invention, the sheet resistance value after the anodization layer forming step is 10 ⁹ to 10 ¹⁰ Ω/sq, and the sheet resistance value after the antistatic layer forming step is 10 ⁵ to 10 ⁹ Ω/sq It may be .

Another embodiment of the present invention provides a frame for semiconductor manufacturing equipment manufactured by the above method.

The method of manufacturing a frame for semiconductor manufacturing equipment according to an embodiment of the present invention can prevent deformation of the frame by curing at room temperature without heat or ultraviolet irradiation to form an antistatic layer.

In addition, according to an embodiment of the present invention, the surface of the anodization layer can be uniform by performing a sealing process before forming the antistatic layer, and the components and contents of carbon nanotubes, solvent, and binder are adjusted to achieve a thin and high flatness. An antistatic layer may be formed.

According to an embodiment of the present invention, the sheet resistance value after the formation of the antistatic layer may be 10 ⁵ to 10 ⁹ Ω/sq, and thus static electricity may be discharged to the outside within a range that does not affect the wafer substrate. .

1 is a partial cross-sectional view schematically showing a part of a frame for semiconductor manufacturing equipment according to an embodiment of the present invention.
2 is a flowchart illustrating a manufacturing process of a frame for semiconductor manufacturing equipment according to an embodiment of the present invention.

Hereinafter, embodiments and embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those of ordinary skill in the art can easily carry out the present invention.

However, the present invention may be embodied in many different forms and is not limited to the embodiments and examples described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Throughout this specification, when a member is said to be located “on” another member, this includes not only a case in which a member is in contact with another member but also a case in which another member is present between the two members.

Throughout this specification, when a part 'includes' a certain component, it means that other components may be further included, rather than excluding other components, unless otherwise stated. As used throughout this specification, the terms 'about', 'substantially' and the like are used in a sense at or close to the numerical value when the manufacturing and material tolerances inherent in the stated meaning are presented, and are used in the understanding of the present invention. It is used to prevent unfair use by unconscionable infringers of the disclosure in which exact or absolute figures are mentioned to help As used throughout this specification, the term 'step' or 'step of' does not mean 'step for'. In addition, terms such as 'unit' and 'module' described in the specification mean a unit that processes at least one function or operation, which means that it may be implemented as one or more hardware or software or a combination of hardware and software. .

The present invention relates to a frame for semiconductor manufacturing equipment including an anodization layer and an antistatic layer, and a method for manufacturing the same, and the method for manufacturing a frame for semiconductor manufacturing equipment according to an embodiment of the present invention contains a metal material capable of anodizing treatment forming an anodization layer by an anodization process including a pretreatment process of degreasing and etching on the frame body, an anodization process, and a sealing process; and coating an antistatic coating solution on the anodized layer and curing at room temperature to form an antistatic layer. The frame for semiconductor manufacturing equipment according to an embodiment of the present invention may be manufactured by the above method.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a partial cross-sectional view schematically showing a part of a frame for semiconductor manufacturing equipment according to an embodiment of the present invention, and FIG. 2 is a process flow chart showing a manufacturing process of a frame for semiconductor manufacturing equipment according to an embodiment of the present invention .

1, a frame for semiconductor manufacturing equipment according to an embodiment of the present invention (100, hereinafter also referred to as 'frame') includes a frame body 110 containing a metal material capable of anodizing; an anodization layer 121 formed by anodizing the metal material; and an antistatic layer 122 formed on the anodized layer. Specific characteristics of the anodization layer 121 and the antistatic layer 122 will be described later.

The frame 100 for semiconductor manufacturing equipment according to an embodiment of the present invention may be used while being mounted in a semiconductor manufacturing apparatus. The frame 100 for semiconductor manufacturing equipment may be formed integrally with the semiconductor manufacturing apparatus or may be combined with each other as separate components.

A work capable of being charged with the frame may be seated on the frame 100 .

One example of the work is not limited thereto, but may be a wafer substrate or a glass substrate for a display. In this case, as an apparatus to which the frame 10 is applied, a semiconductor manufacturing apparatus on which the wafer substrate is seated, a dispenser on which a display glass substrate is seated, and the like may be mentioned. The present invention is not limited thereto, and can be applied to any device requiring antistatic.

First, a manufacturing process of a frame for semiconductor manufacturing equipment according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2 . The frame for semiconductor manufacturing equipment according to an embodiment of the present invention may be more specifically understood and specified by a manufacturing process to be described later.

As shown in FIG. 2 , an anodization layer may be formed on the frame body for semiconductor manufacturing equipment (S ₁ ), and then an antistatic layer may be formed (S ₂ ). According to an embodiment of the present invention, a method of manufacturing a frame for semiconductor manufacturing equipment may be understood as a surface treatment process of the frame.

According to one embodiment of the present invention, the frame body 110 may be used containing a metal material capable of anodizing. Representative metal materials that can be anodized are not limited thereto, but for example, aluminum (Al), magnesium (Mg), zinc (Zn), titanium (Ti), tantalum (Ta), hafnium (Hf) , and niobium (Nb). Specifically, the frame body may be an aluminum alloy.

The step of forming an anodization layer according to an embodiment of the present invention may be performed as a pretreatment process (degreasing and etching), an anodization process, and a sealing process.

The pretreatment process may be performed as a degreasing process and an etching process. Specifically, after the degreasing process, washing with water and an etching process may be performed. Even if not specifically mentioned, according to an embodiment of the present invention, a water washing process may be performed between each process. Specifically, it can be washed with water by a spray method.

According to an embodiment of the present invention, the degreasing process may be performed at a temperature of 20° C. or higher, specifically 20 to 40° C. for 10 to 20 minutes. The degreasing agent is not particularly limited, and materials commonly used in the art may be used.

The etching process may be performed using sodium hydroxide (NaOH), and the concentration of the sodium hydroxide may be 5 to 20%. The temperature of the etching process may be 35 to 45° C., and may be performed for 1 to 5 minutes. In the case of a precision process, it may be carried out for 0.5 to 1 minute, and in the case of a general process, it may be carried out for 3 to 5 minutes.

By the pretreatment process, the oxide film formed in the anodization process, that is, the anodization layer, may be uniformly and thinly formed.

Next, an anodization process may be performed on the pretreated frame body.

Anodizing is a compound word of Anode and Oxidizing. Anodizing is a process in which metal or parts are placed on the anode and electrolyzed in dilute-acid electrolyte. An oxide film (eg, aluminum oxide: Al ₂ O ₃ ) having great adhesion to the target metal may be formed by oxygen generated from the anode during the electrolysis process. This is different from plating a metal part on a cathode in normal electroplating.

According to one embodiment of the present invention, the frame body may be made of an aluminum material, and the frame body is energized with an electrolyte as an anode, and the surface of the frame body is oxidized by oxygen generated in the anode, that is, a film of aluminum oxide. An anodization layer 121 may be formed.

There are various electrolytes used in the anodic oxidation process, and according to an embodiment of the present invention, nitric acid and sulfuric acid may be used.

Specifically, after the pretreatment process is completed, the nitric acid treatment process may be performed, and then the sulfuric acid treatment process may be performed. The nitric acid treatment process may be performed two or more times, and a water washing process may be performed after the nitric acid treatment process.

The nitric acid treatment process may use a nitric acid solution having a concentration of 20 to 40%, and may be performed at a temperature of 10 to 30° C. for 5 to 10 seconds.

The anodization layer may be uniformly and thinly formed by the nitric acid treatment process.

According to an embodiment of the present invention, a matte treatment process may be performed between two or more nitric acid treatment processes. Specifically, a nitric acid treatment process, a water washing process, a matting process, a nitric acid treatment process, and a water washing process may be performed.

The matte treatment process may be performed for 2 to 3 minutes at a temperature of 35 to 45° C. at a concentration of 2 to 4% of ammonium acid fluoride (NH ₄ HF _{2 ).} When the matting process is performed between the nitric acid treatment processes, the efficiency of the anodization process can be increased to form an anodization layer within a short time.

After the nitric acid treatment process, a sulfuric acid treatment process may be performed. The sulfuric acid treatment process may use 15 to 25% of sulfuric acid (H ₂ SO ₄ ). In the case of a light process, it may be carried out at a temperature of -10 to -6°C for 60 to 90 minutes. In the case of a soft process, it may be carried out at a temperature of 18 to 22 °C. In the case of a white oxide film, it may be carried out for 10 to 15 minutes, and in the case of a black oxide film, it may be carried out for 30 to 40 minutes.

According to an embodiment of the present invention, a sealing process may be performed after the anodization treatment.

The anodization layer formed by the anodization treatment may have an irregular surface such as a plurality of pores formed therein. The surface of the anodization layer can be made uniform by the sealing process, and accordingly, the process of forming the antistatic layer can be easily performed later.

The sealing process may be performed as a hydration process. Although not limited thereto, for example, weakly acidic water, deionized water, sodium dichromate, nickel acetate solution, etc. may be used.

During the hydration sealing process, Al ₂ O ₃ formed by anodizing may be changed to boehmite (Al ₂ O ₃ ·H _{2 O).} Accordingly, it is possible to fill the pores formed on the surface of the anodized layer to improve the uniformity of the anodized layer and to improve stickiness.

According to one embodiment of the present invention, the sealing process may be managed at a pH of 6 to 8, specifically, pH 7 to 8. Specifically, in a high-temperature process of 40 to 45° C., it may be performed for 1 to 2 minutes. In a low temperature process of 20 to 30 °C, it may be carried out for 5 to 10 minutes.

After the sealing process, a bath washing and drying process may be performed.

According to an embodiment of the present invention, in the case of the black process, a dye treatment process may be performed before the sealing process. The dye treatment process may be performed by managing the pH at a temperature of 35 to 45° C. at a pH of 4.5 to 5.5.

Next, an antistatic layer 122 may be formed on the anodization layer 121 ( S ₂ ).

According to one embodiment of the present invention, the antistatic layer 122 may be formed in the treatment of the antistatic coating agent.

According to an embodiment of the present invention, the anodization layer 121 may be heat-treated before the antistatic coating agent is treated. The heating may be performed at a temperature of 100°C or higher, specifically 100 to 120°C. The antistatic layer may be formed more uniformly and thinly by the heat treatment of the anodization layer 121 .

The antistatic coating agent may include carbon nanotubes, a solvent, a binder, and a curing agent.

According to an embodiment of the present invention, the carbon nanotubes may be selected from single-walled carbon nanotubes, double-walled carbon nanotubes, multi-walled carbon nanotubes, bundled carbon nanotubes, and combinations thereof.

The carbon nanotubes may contain 0.01 to 0.2 parts by weight. If the content of the carbon nanotubes is less than 0.01 parts by weight, the antistatic effect may be insufficient due to a high sheet resistance value, and if it exceeds 0.2 parts by weight, the flatness of the antistatic layer is lowered or the thickness of the antistatic layer is It may thicken and the antistatic effect may be insufficient.

The solvent may be isopropyl alcohol (IPA), methyl ethyl ketone (MEK), or toluene (Toluene). The solvent may be 98 to 99.9 parts by weight.

The binder may use a room temperature curing resin. For example, a phenol resin, an unsaturated polyester resin, or a vinyl ester resin can be used. In the case of phenolic resin, it is possible to improve the durability of the antistatic layer by having low strength deterioration and strong scratch resistance. The binder may be 40 to 80 parts by weight. If the content of the binder is less than 40 parts by weight, curing at room temperature may not proceed smoothly, and if the content of the binder exceeds 80 parts by weight, the thickness of the antistatic layer may be thick and the antistatic effect may be insufficient.

The curing agent may be a room temperature curing accelerator. Although not limited thereto, for example, an acid curing accelerator, specifically, an inorganic acid such as aromatic sulfonic acid, phosphoric acid, hydrochloric acid, or sulfuric acid may be used. or ketone peroxides such as methyl ethyl ketone peroxide (MEKP) or acetylacetone peroxide (AAP), or hydroperoxides such as cumene hydroperoxide (CHP) and metal soap such as cobalt naphthenate. Aromatic tertiary amines such as benzoyl peroxide (BPO) and N,N-dimethylaniline can be used. The curing agent may be used in an amount of 0.1 to 15 parts by weight.

The treatment of the antistatic coating agent is not limited thereto, but may be performed by, for example, air gun spraying.

When the coating layer is formed by the antistatic coating agent, it can be cured at room temperature to form the antistatic layer 122 . The curing process may be performed for 12 to 24 hours.

According to an embodiment of the present invention, the frame body, the anodization layer, and the antistatic layer may not be deformed by curing at room temperature without irradiation with heat or ultraviolet rays.

According to an embodiment of the present invention, the sheet resistance value after the formation of the anodization layer 121 may be 10 ⁹ to 10 ¹⁰ Ω/sq. These sheet resistance values can still generate static electricity, which may be unsuitable for large-area wafer substrate operations. However, after the antistatic layer 122 is formed, the sheet resistance value may be 10 ⁵ to 10 ⁹ Ω/sq. By forming the antistatic layer, the sheet resistance value can be lowered. If the sheet resistance exceeds 10 ⁹ Ω/sq, it may be difficult to discharge static electricity generated due to poor electrical conductivity. If the sheet resistance is ^{less than 10 5} Ω/sq, the electrical conductivity is too large to affect the wafer substrate can affect

In addition, the antistatic layer 122 according to an embodiment of the present invention can be coated thinly and uniformly on the anodization layer 121 by controlling the components and contents of carbon nanotubes, solvents, and binders, thereby providing excellent antistatic effect. can have

Hereinafter, the present invention will be described in more detail through Examples according to an embodiment of the present invention, but these Examples do not limit the scope of the present invention.

[Example]

Example

1) Anodizing (anodic oxidation) process

The received frame was degreased (concentration DR500 5%, temperature 20°C, 10 minutes), washed with water, and then etched (concentration caustic soda (NaOH) 10%, temperature 40°C, precision 1 minute). Next, it is treated with nitric acid (concentration 30%, temperature 20°C, 5 seconds), washed with water, then matt (ammonium acid fluoride (NH ₄ HF ₂ ) 3%, temperature 40°C, 3 minutes), and nitric acid treatment (concentration) 30%, temperature 20°C, 5 seconds) and washed with water. It was treated with sulfuric acid (concentration 20%, temperature 20°C, 10 minutes) to form an oxide film, sealed (pH 7, temperature 40°C, 1 minute), washed with hot water and dried.

2) Antistatic coating process

A coating agent obtained by mixing 5 g of a curing agent in 50 g of a dispersion of 0.1 wt % of carbon nanotubes and 99.9 wt % of solvent (MEK) (including a binder) was sprayed with an air gun to coat. It was heated to 100° C. before spraying with an air gun. It was cured at room temperature for 24 hours to form an antistatic coating layer.

[evaluation]

As a result of measuring with a surface resistor, it was confirmed that the resistance value of the anodizing layer after the anodizing process was 10 ⁹ Ω/sq, and the resistance value of the antistatic coating layer was 10 ⁶ Ω/sq.

Although the above has been described with reference to the embodiments of the present invention, those skilled in the art can variously modify the present invention within the scope without departing from the spirit and scope of the present invention described in the claims below. and can be changed.

Claims (10)

forming an anodization layer by an anodization treatment including a pretreatment process of degreasing and etching a frame body containing a metal material capable of anodization treatment, an anodization process, and a sealing process; and
forming an antistatic layer by coating an antistatic coating solution on the anodizing layer and curing at room temperature;
A method of manufacturing a frame for semiconductor manufacturing equipment comprising a.
According to claim 1,
The degreasing process is performed at a temperature of 20° C. or higher for 10 to 20 minutes, and the etching process is performed with a sodium hydroxide solution of 5 to 20% concentration at a temperature of 35 to 45° C. for 0.5 to 5 minutes. Frame for semiconductor manufacturing equipment manufacturing method.
According to claim 1,
The anodic oxidation process is a nitric acid treatment process performed for 5-10 seconds at a temperature of 10-30°C with a nitric acid solution of 20 to 40% concentration and a sulfuric acid solution of 15-25% concentration at a temperature of -10 to -6°C. A frame for semiconductor manufacturing equipment comprising a hard process performed for 60 to 90 minutes, or a soft process performed for 10 to 15 minutes or 30 to 40 minutes at a temperature of 18 to 22° C. with a sulfuric acid solution of 15 to 25% concentration manufacturing method.
4. The method of claim 3,
The nitric acid treatment process is performed twice or more, and between the nitric acid treatment process, a matte process is performed for 2 to 3 minutes at a temperature of 35 to 45° C. _{with 2 to 4% ammonium fluoride (NH 4} HF _{2 ).} A method of manufacturing a frame for semiconductor manufacturing equipment.
According to claim 1,
The sealing process is managed at a pH of 6 to 8, and semiconductor manufacturing is performed as a high temperature process performed at a temperature of 40 to 45° C. for 1 to 2 minutes or a low temperature process performed at a temperature of 20 to 30° C. for 5 to 10 minutes. A method of manufacturing a frame for equipment.
According to claim 1,
A method of manufacturing a frame for semiconductor manufacturing equipment to perform a process of heat-treating the anodization layer to 100° C. or higher before the antistatic layer forming step.
According to claim 1,
The antistatic coating solution is a solvent selected from the group consisting of 0.01 to 0.2 parts by weight of carbon nanotubes, isopropyl alcohol (IPA), methyl ethyl ketone (MEK), or toluene (Toluene) 98 to 99.9 A method of manufacturing a frame for semiconductor manufacturing equipment comprising parts by weight, 40 to 80 parts by weight of a room temperature curing binder resin, and 0.1 to 15 parts by weight of a curing agent.
According to claim 1,
The room temperature curing method of manufacturing a frame for semiconductor manufacturing equipment is performed for 12 to 24 hours.
According to claim 1,
The sheet resistance value after the anodization layer forming step is 10 ⁹ to 10 ¹⁰ Ω/sq, and the sheet resistance value after the antistatic layer forming step is 10 ⁵ to 10 ⁹ Ω/sq. Method of manufacturing a frame for semiconductor manufacturing equipment.
A frame for semiconductor manufacturing equipment manufactured by the method of any one of claims 1 to 9.

Images