KR102403216B1 - Coating composition for protecting anodic oxide layer and element of semiconductor manufacturing apparatus using the smae - Google Patents

Abstract

The present invention relates to a coating composition for protecting an anodic oxide layer and a unit of a semiconductor manufacturing apparatus using the same. In particular, the composition is for forming a coating layer capable of protecting an anodic oxide layer (for example, an AAO film) formed on the unit of the semiconductor manufacturing apparatus, and contains fluorobutane as a solvent and tetrafluoroethylene as a fluororesin in a specific ratio, thereby forming the coating layer capable of protecting the anodic oxide layer formed on the unit of the semiconductor manufacturing apparatus, and, in this case, having an effect of increasing a withstand voltage without cracking on the unit.

Description

Coating composition for protecting anodic oxide layer and element of semiconductor manufacturing apparatus using the smae

The present invention relates to a coating composition for protecting an anodization layer, particularly a composition for forming a coating layer capable of protecting an anodization layer formed on a component of semiconductor manufacturing equipment, and a coating for protecting an anodization layer that can increase the withstand voltage and physical properties of the component It relates to a composition and a component of a semiconductor manufacturing equipment using the same.

[Project unique number] D2121017

[Buddhist name] Gyeonggi-do

[Research and Management Specialized Institution] Gyeonggi-do Economic Science Promotion Agency

[Research project name] Company-led (general)

[Research project name] Development of surface treatment process technology for semiconductor equipment parts to enhance withstand voltage and corrosion resistance

[Contribution rate] 1/1

[Organizer] WithLC Co., Ltd.

[Research period] 2021.08.01.~2022.07.31.

Halogen such as Cl, F and Br as reaction gas, etching gas and cleaning gas inside the vacuum chamber used in the manufacturing process of semiconductor and FPD such as CVD (chemical vapor deposition) device, PVD (physical vapor deposition) device, and dry etching device A corrosive gas containing the element is introduced. So, each part of the vacuum chamber, that is, chamber wall, heaters, electrodes, liners, shields, chucks, and pedestals. Etc. is required to have corrosion resistance against corrosion. In addition, since halogen-based plasma including the corrosive gas is frequently generated in the vacuum chamber, corrosion resistance to plasma is also important.

However, current vacuum chamber components are formed of aluminum (Al) and/or aluminum alloy (Al-alloy), which do not have sufficient gas corrosion resistance and plasma corrosion resistance, so that the surface of the components is easily corroded. As such, when the surface of the component is corroded, fine particles reacted with a halogen-based material such as AlF ₃ or AlCl ₃ are generated on the surface of the component, or ions by plasma are generated, thereby contaminating the surface of the component.

Conventionally, in order to solve this problem, a surface protective film is formed on the surface of equipment parts made of aluminum and/or aluminum alloy by anodization or plasma spray method.

As disclosed in Korean Patent Application Laid-Open No. 2002-78242, the method for forming a surface protective film by anodization is immersed in an electrolyte solution such as sulfuric acid, and then is less than 100V in a temperature range of 10 to 15°C, for example, 20 to 80V ) voltage and a current of 1 to 2 A/dm ² (dm ² =10 cm×10 cm) are applied to form an anodized film, that is, an alumina layer, on the surface of the part.

In addition, as disclosed in Korean Patent Application Laid-Open No. 2002-93267, a method for forming a surface protection film by plasma spraying supplies a predetermined wire or powder-type material in a high-speed plasma flame, and the wire or powder By allowing this to melt, a protective film is formed on the surface of the part.

However, the method for manufacturing a surface protection film by the anodization method and the plasma spray method has the following problems.

First, the alumina layer formed by the conventional anodization method has a number of surface defects such as cracks on the surface thereof. Since these surface defects reflect defects on the surface of the component as they are, they cannot have good film properties. In addition, since the alumina layer by the conventional anodization method has a thickness of only about 50 μm, the possibility of breakdown is high, and it does not meet the chemical resistance and wear resistance conditions of semiconductor or FPD processes. In addition, since the alumina layer by the conventional anodization method does not have a peak value at a specific angle, it can be inferred that it has an amorphous state, and as the alumina layer has an amorphous state, it has a very unstable state.

On the other hand, the surface protective film formed by the plasma spraying method has a problem in that the bonding force between the protective film and the parts is very low, and thus it is easily peeled off. Due to this, there is a problem in that particles remain between the protective film and the parts. In addition, in the plasma spray method, a number of voids are inevitably formed in the protective film by the protective film forming mechanism (eg, thermal spray coating), and through these pores, corrosive radicals during plasma processing are directed toward the part. Penetrates and damages parts. In addition, contamination is easily increased by the components remaining in the process, which can cause wafer defects, and there are also problems of shortening the replacement cycle of parts.

Accordingly, there is a need for development of a coating layer capable of protecting an anodized film formed on a component of semiconductor manufacturing equipment and a coating composition for protecting an anodized layer capable of increasing the withstand voltage and physical properties of the component.

Republic of Korea Patent Publication No. 10-2002-0078242 (published date: October 18, 2002) Republic of Korea Patent Publication No. 10-2002-0093267 (published date: December 16, 2002)

The present invention is to solve the above problems, and it is possible to form a coating layer capable of protecting the anodization layer (eg, AAO film) formed on the parts of semiconductor manufacturing equipment, and the withstanding voltage without cracking the parts It is an object to provide a coating composition for protecting the anodization layer that can increase the

In addition, the present invention is to improve the characteristics such as withstand voltage, corrosion resistance, hardness, wear resistance, corrosion resistance of the component by strengthening the anodization layer of the equipment chamber component for the semiconductor manufacturing process, and to improve the production efficiency by increasing the replacement cycle of the component will do

A coating composition for protecting an anodization layer according to an embodiment of the present invention for achieving the above object, 100 parts by weight of fluorobutane as a solvent; and 1 to 8 parts by weight of tetrafluoroethylene as a fluororesin.

Here, the fluorobutane is methoxy-nonafluorobutane, and the tetrafluoroethylene may be at least one selected from the group consisting of PTFE (Polytetrafluoroethylene) and ETFE (Ethylenetetrafluoroethylene).

And, the tetrafluoroethylene may be included in 3 to 7 parts by weight.

One embodiment of the present invention, 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin; and 1 to 3 parts by weight of aluminum oxide as an inorganic agent (aluminum oxide, Al ₂ O ₃ ); It is a coating composition for protecting an anodized layer, including.

The present invention may further include 10 parts by weight of isopropyl alcohol (IPA) in which the aluminum oxide is dispersed.

The aluminum oxide may be surface-modified by filtration under reduced pressure after being mixed with a hydrofluoric acid solution.

Another embodiment of the present invention, 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin; And yttrium oxide as an inorganic agent (Yttrium (III) oxide, Y ₂ O ₃ ) 0.1 to 0.6 parts by weight; Containing, is a coating composition for protecting the anodization layer.

The present invention may further include 10 parts by weight of ispropyl alcohol (IPA) in which the yttrium oxide is dispersed.

The yttrium oxide may be surface-modified by filtration under reduced pressure after being mixed with a hydrofluoric acid solution.

Another embodiment of the present invention is a coating composition for protecting an anodization layer of a semiconductor manufacturing equipment component, for protecting an anodization layer formed on a component of a semiconductor manufacturing equipment component.

Another embodiment of the present invention is a component of semiconductor manufacturing equipment; an anodization layer formed on the surface of the component; and a protective coating layer formed on the surface of the anodization layer by the composition according to the present invention.

The anodization layer may be an anodic aluminum oxide (AAO) film formed by anodizing aluminum.

The details of other embodiments are included in the detailed description and drawings.

The coating composition for protecting an anodization layer according to the present invention is characterized in that it contains fluorobutane as a solvent and tetrafluoroethylene as a fluororesin in a specific ratio, the anode formed on parts of semiconductor manufacturing equipment A coating layer capable of protecting the oxide layer (eg, AAO film) may be formed, and in this case, there is an effect of increasing the withstand voltage without generating cracks in the component.

In addition, the present invention further comprises aluminum oxide (aluminum oxide, Al ₂ O ₃ ) or yttrium oxide (Yttrium (III) oxide, Y ₂ O ₃ ) as an inorganic agent in the coating composition for protecting the anodization layer comprising a solvent and a fluororesin Characterized in that, there is an effect that can significantly increase the withstand voltage without cracks occurring in the parts of the semiconductor manufacturing equipment.

According to the present invention, by strengthening the anodization layer of the equipment chamber component for the semiconductor manufacturing process, the characteristics such as withstand voltage, corrosion resistance, hardness, abrasion resistance, corrosion resistance of the component are improved, and the replacement cycle of the component is increased to improve production efficiency. can

1 shows an example in which a protective coating layer (coating film) is formed on an anodization layer (AAO film) formed on the surface of a component (Al substrate) of semiconductor manufacturing equipment using a coating composition for protecting an anodization layer according to an embodiment of the present invention it is a schematic diagram

Since the present invention can apply various transformations and can have various embodiments, specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention. In describing the present invention, if it is determined that a detailed description of a related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terms used in the present application are only used to describe specific embodiments, and are not intended to limit the present invention. The singular expression includes the plural expression unless the context clearly dictates otherwise. In the present application, terms such as “comprise” or “have” are intended to designate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but one or more other features It should be understood that this does not preclude the existence or addition of numbers, steps, operations, components, parts, or combinations thereof.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The above terms are used only for the purpose of distinguishing one component from another.

1 is a protective coating layer (eg, AAO film) on an anodization layer (eg, AAO film) formed on the surface of a component (eg, Al substrate) of semiconductor manufacturing equipment by using the coating composition for protecting an anodization layer according to an embodiment of the present invention; It is a schematic diagram showing an example in which a coating film) was formed.

The present invention relates to a coating composition for protecting an anodization layer, particularly a composition for forming a coating layer capable of protecting an anodization layer formed on a component of semiconductor manufacturing equipment, and a coating for protecting an anodization layer that can increase the withstand voltage and physical properties of the component It relates to a composition and a component of a semiconductor manufacturing equipment using the same.

In the present specification, semiconductor manufacturing equipment is not particularly limited, and includes a vacuum chamber or an apparatus used in the manufacturing process of semiconductors and FPDs, such as a CVD apparatus, a PVD apparatus, and a dry etching apparatus, which are well known in the art.

In addition, in the present specification, the parts of the semiconductor manufacturing equipment are not particularly limited, and refer to various parts included in the semiconductor manufacturing equipment, for example, each part of the vacuum chamber, that is, a chamber wall (chamber wall), a heater (heater) It may include types, electrodes, liners, shields, chucks, pedestals, and the like.

The coating composition for protecting an anodization layer according to an embodiment of the present invention includes 100 parts by weight of fluorobutane as a solvent; and 1 to 8 parts by weight of tetrafluoroethylene as a fluororesin.

After confirming that the present inventors can increase the withstand voltage and physical properties of semiconductor manufacturing equipment parts compared to the case where fluorobutane and tetrafluoroethylene as a solvent are included in a specific ratio as a solvent as a coating composition for protecting the anodization layer, , the present invention was completed.

Specifically, as can be seen in Example 1 and Experimental Example 1 to be described later, with respect to 100 parts by weight of fluorobutane as a solvent, as the tetrafluoroethylene content increases, the withstand voltage level also increases, but the tetrafluoroethylene When it reached 10 parts by weight, the withstand voltage was rather decreased, and cracks were also generated. Accordingly, it was confirmed that the most suitable content of tetrafluoroethylene is 1 to 8 parts by weight, and more preferably 3 to 7 parts by weight.

The fluorobutane is not particularly limited, but methoxy-nonafluorobutane is preferable, and the tetrafluoroethylene is also not particularly limited, and from the group consisting of PTFE (Polytetrafluoroethylene) and ETFE (Ethylenetetrafluoroethylene) At least one selected is preferred.

One embodiment of the present invention, 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin; and 1 to 3 parts by weight of aluminum oxide as an inorganic agent (aluminum oxide, Al ₂ O ₃ ); It is a coating composition for protecting an anodized layer, including.

As a coating composition for protecting an anodized layer, the present inventors further include aluminum oxide as an inorganic agent with respect to a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin, or include in a specific ratio, otherwise After confirming that the withstand voltage and physical properties of semiconductor manufacturing equipment parts can be significantly improved, the present invention has been completed.

Specifically, as can be seen in Example 2 and Experimental Example 2 to be described later, with respect to 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin, aluminum oxide (Al ₂ ) O ₃ ) When using the Al ₂ O ₃ -fluorine coating solution further containing, compared to the case of Example 1 not containing the aluminum oxide, it was confirmed that the withstand voltage was significantly increased.

In addition, it was confirmed that the withstand voltage level increased as the aluminum oxide content increased as a whole, but when the aluminum oxide amounted to 5 parts by weight, the withstand voltage was rather decreased and cracks occurred. Accordingly, it was confirmed that the most suitable content of aluminum oxide is 1 to 4 parts by weight, and more preferably 1 to 3 parts by weight.

Here, the aluminum oxide may be isopropyl alcohol (IPA) in which aluminum oxide is dispersed, and the isopropyl alcohol (IPA) is preferably included in an amount of 10 parts by weight. Dispersing aluminum oxide in isopropyl alcohol (IPA) is preferable because it has the advantage of better mixing with the coating solution.

In addition, the aluminum oxide may be surface-modified by filtration under reduced pressure after being mixed with a hydrofluoric acid solution. For example, aluminum oxide with a modified surface can be obtained by mixing aluminum oxide with a hydrofluoric acid solution, filtration under reduced pressure, and distillation under reduced pressure. When the surface-modified aluminum oxide is used as an inorganic agent, the reactivity with the fluororesin is increased to obtain more advantageous effects.

Another embodiment of the present invention, 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin; And yttrium oxide as an inorganic agent (Yttrium (III) oxide, Y ₂ O ₃ ) 0.1 to 0.6 parts by weight; Containing, is a coating composition for protecting the anodization layer.

The present inventors have disclosed that, as a coating composition for protecting an anodization layer, yttrium oxide is further included as an inorganic agent with respect to a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin, or when it contains yttrium oxide in a specific ratio, otherwise After confirming that the withstand voltage and physical properties of semiconductor manufacturing equipment parts can be significantly improved, the present invention has been completed.

Specifically, as can be seen in Example 3 and Experimental Example 3 to be described later, with respect to 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin, yttrium oxide is further included as an inorganic agent By using the Y ₂ O ₃ -fluorine coating solution, it was confirmed that the withstand voltage was significantly increased compared to the case of Example 1 not containing the yttrium oxide.

In addition, as the overall yttrium oxide content increased, the withstand voltage level also increased, but when the yttrium oxide reached 1.0 parts by weight, there was little increase and cracks were also observed. Accordingly, it was confirmed that the most suitable content of yttrium oxide is 0.1 to 0.7 parts by weight, more preferably 0.3 to 0.5 parts by weight.

Here, the yttrium oxide may be isopropyl alcohol (IPA) in which yttrium oxide is dispersed, and the isopropyl alcohol (IPA) is preferably included in an amount of 10 parts by weight. Dispersing yttrium oxide in isopropyl alcohol (IPA) is preferable because it has the advantage of better mixing with the coating solution.

In addition, the yttrium oxide may be surface-modified by filtration under reduced pressure after being mixed with a hydrofluoric acid solution. For example, yttrium oxide with a modified surface can be obtained by mixing yttrium oxide with a hydrofluoric acid solution, filtration under reduced pressure, and distillation under reduced pressure. When the surface-modified yttrium oxide is used as an inorganic agent, the reactivity with the fluororesin increases, thereby obtaining more advantageous effects.

Another embodiment of the present invention is a coating composition for protecting an anodization layer of a semiconductor manufacturing equipment component, for protecting an anodization layer formed on a component of a semiconductor manufacturing equipment component.

That is, the coating composition for protecting the anodization layer according to the present invention is to protect the anodization layer formed on the components of semiconductor manufacturing equipment.

In addition, the anodization layer may be an anodized metal film formed by anodizing, for example, a film produced by anodizing aluminum, magnesium, zinc, titanium, etc., among them, anodized aluminum (AAO) It is preferable that it is a film.

Another embodiment of the present invention is a component of semiconductor manufacturing equipment; an anodization layer formed on the surface of the component; and a protective coating layer formed on the surface of the anodization layer by the composition according to the present invention.

The components and the anodization layer of the semiconductor manufacturing equipment are the same as described above.

The present invention is characterized in that the protective coating layer is formed to protect the anodization layer formed on the components of semiconductor manufacturing equipment, and the protective coating layer is formed using the composition according to the present invention as described above.

The anodization layer may be an anodic aluminum oxide (AAO) film formed by anodizing aluminum.

The components of the semiconductor manufacturing equipment according to the present invention have the effect of remarkably excellent withstand voltage without generating cracks.

According to the present invention, by strengthening the anodization layer of the equipment chamber component for the semiconductor manufacturing process, the characteristics such as withstand voltage, corrosion resistance, hardness, abrasion resistance, corrosion resistance of the component are improved, and the replacement cycle of the component is increased to improve production efficiency. can

The present invention may be better understood by the following examples, which are for illustrative purposes of the present invention and are not intended to limit the scope of protection defined by the appended claims.

<Example 1> Preparation of Fluorine Coating Solution and Formation of Coating Layer

3 parts by weight (Example 1.1), 5 parts by weight (Example 1.2) of fluororesin tetrafluoroethylene (DuPont, SLA-NEW) in 100 parts by weight of a methoxy-nonafluorobutane solvent; 7 parts by weight (Example 1.3) and 10 parts by weight (Example 1.4) were separately mixed to prepare a fluorine coating solution.

On an Al 6061 material (50mm x 50mm x 5T) specimen, an anodic aluminum oxide (AAO) film was formed to a thickness of 50 μm by an anodization process. Then, the fluorine coating layer was formed by dip coating by immersion in the prepared fluorine coating solution.

<Experimental Example 1> Measurement of properties of Al material with fluorine coating layer

The Al material on which the fluorine coating layer was formed according to Example 1 was naturally dried in the air for 1 h, followed by hot air drying at 80° C. for 4 hours, and then the withstand voltage and cracks were checked.

The withstand voltage was measured by breaking the insulating layer while increasing the voltage using TOS9201 (KIKUSUI) withstand voltage measuring equipment. Confirmed.

The results are shown in Table 1 below.

tetrafluoroethylene withstand voltage crack Example 1.1 3 parts by weight 1.41 doesn't exist Example 1.2 5 parts by weight 1.49 doesn't exist Example 1.3 7 parts by weight 1.56 doesn't exist Example 1.4 10 parts by weight 1.55 occurred

As shown in Table 1, as the overall tetrafluoroethylene content increased, the withstand voltage level also increased, but when the tetrafluoroethylene content reached 10 parts by weight, the withstand voltage was rather decreased, and it was confirmed that cracks occurred.

Accordingly, it was confirmed that the most suitable content of tetrafluoroethylene is 1 to 8 parts by weight, and more preferably 3 to 7 parts by weight.

<Example 2> Al ₂ O ₃ -Preparation of fluorine coating solution and formation of coating layer

First, as an inorganic agent, 5 parts by weight of 30 nm aluminum oxide (Al ₂ O ₃ ) was mixed with 1,000 parts by weight of a hydrofluoric acid solution, followed by 12 hours at a rotation speed of 300 to 700 rpm using a stirrer, followed by filtration under reduced pressure. Then, the filtrate filtered under reduced pressure was distilled under reduced pressure to prepare surface-modified aluminum oxide.

Then, 1 part by weight (Example 2.1), 3 parts by weight (Example 2.2), and 5 parts by weight (Example 2.3) of the surface-modified aluminum oxide were dispersed in 10 parts by weight of isopropyl alcohol (IPA), respectively, Al ₂ O ₃ -Fluorine coating solution was prepared by mixing 90 parts by weight of the coating solution prepared in Example 1.3.

On an Al 6061 material (50mm x 50mm x 5T) specimen, an anodic aluminum oxide (AAO) film was formed to a thickness of 50 μm by an anodization process. Then, by dipping in the prepared Al ₂ O ₃ -fluorine coating solution, dip coating was performed to form an Al ₂ O ₃ -fluorine coating layer.

<Experimental Example 2> Al ₂ O ₃ -Measurement of properties of Al material with fluorine coating layer

According to Example 2, the Al material with the Al ₂ O ₃ -fluorine coating layer formed thereon was naturally dried in the air for 1 h, followed by hot air drying at 80° C. for 4 hours, and then the withstand voltage and cracks were checked.

The method for measuring the withstand voltage and checking for cracks is the same as described above.

The results are shown in Table 2 below.

Surface-modified aluminum oxide withstand voltage crack Example 2.1 1 part by weight 1.73 doesn't exist Example 2.2 3 parts by weight 1.85 doesn't exist Example 2.3 5 parts by weight 1.78 occurred

As shown in Table 2 above, when using the Al ₂ O ₃ -fluorine coating solution further containing aluminum oxide (Al ₂ O ₃ ) as an inorganic agent, compared to the case of Example 1 that does not contain the aluminum oxide, It was confirmed that the withstand voltage increased significantly.

In addition, it was confirmed that the withstand voltage level increased as the content of aluminum oxide increased as a whole, but when the amount of aluminum oxide reached 5 parts by weight, the withstand voltage was rather decreased and cracks occurred. Accordingly, it was confirmed that the most suitable content of aluminum oxide is 1 to 4 parts by weight, and more preferably 1 to 3 parts by weight.

<Example 3> Y ₂ O ₃ -Preparation of fluorine coating solution and formation of coating layer

First, as an inorganic agent, 5 parts by weight of 30 nm yttrium oxide (Yttrium (III) oxide, Y ₂ O ₃ ) were mixed with 1,000 parts by weight of a hydrofluoric acid solution, followed by 12 hours at a rotation speed of 300 to 700 rpm using a stirrer, followed by filtration under reduced pressure. proceeded. Then, the filtrate filtered under reduced pressure was distilled under reduced pressure to prepare a surface-modified yttrium oxide.

Then, 0.3 parts by weight of the surface-modified yttrium oxide (Example 3.1), 0.5 parts by weight (Example 3.2), and 0.1 parts by weight (Example 3.3) were dispersed in 10 parts by weight of isopropyl alcohol (IPA), respectively, By mixing 90 parts by weight of the coating solution prepared in Example 1.3, Y ₂ O ₃ -fluorine coating solution was prepared.

On an Al 6061 material (50mm x 50mm x 5T) specimen, an anodic aluminum oxide (AAO) film was formed to a thickness of 50 μm by an anodization process. Then, by immersing in the prepared Y ₂ O ₃ -fluorine coating solution, dip coating was performed to form a Y ₂ O ₃ -fluorine coating layer.

<Experimental Example 3> Y ₂ O ₃ -Measurement of properties of Al material with fluorine coating layer

According to Example 3, Y ₂ O ₃ -Al material with a fluorine coating layer formed thereon was naturally dried in the air for 1 h, followed by hot air drying at 80° C. for 4 hours, and then the withstand voltage and cracks were checked.

The method for measuring the withstand voltage and checking for cracks is the same as described above.

The results are shown in Table 3 below.

Surface-modified yttrium oxide withstand voltage crack Example 3.1 0.3 parts by weight 1.68 doesn't exist Example 3.2 0.5 parts by weight 1.76 doesn't exist Example 3.3 1.0 part by weight 1.77 occurred

As shown in Table 3, when using the Y ₂ O ₃ -fluorine coating solution further containing yttrium oxide (Y ₂ O ₃ ) as an inorganic agent, compared to Example 1 not containing the yttrium oxide, It was confirmed that the withstand voltage increased significantly.

In addition, as the overall yttrium oxide content increased, the withstand voltage level increased, but when the yttrium oxide reached 1.0 parts by weight, there was little increase and cracks were also observed. Accordingly, it was confirmed that the most suitable content of yttrium oxide is 0.1 to 0.7 parts by weight, more preferably 0.3 to 0.5 parts by weight.

<Comparative example>

Comparative Example 1

On an Al 6061 material (50mm x 50mm x 5T) specimen, an anodic aluminum oxide (AAO) film was formed to a thickness of 50 μm by an anodization process. The Al material with an AAO film formed to a thickness of 50 μm was naturally dried in the air for 1 h, followed by hot air drying at 80° C. for 4 hours, and then the withstand voltage and cracks were checked. The method for measuring the withstand voltage and checking for cracks is the same as described above.

Comparative Example 2

An AAO (Anodic Aluminum Oxide) film was formed to a thickness of 80 μm on an Al 6061 material (50 mm x 50 mm x 5T) specimen by an anodization process. The Al material with an AAO film formed to a thickness of 80 μm was naturally dried in the air for 1 h, followed by hot air drying at 80° C. for 4 hours, and then the withstand voltage and cracks were checked. The method for measuring the withstand voltage and checking for cracks is the same as described above.

Comparative Example 3

An Al 6061 material (50mm x 50mm x 5T) specimen was immersed in the Al ₂ O ₃ -fluorine coating solution according to Example 2.2 and dip coating was performed to form an Al ₂ O ₃ -fluorine coating layer. Then, the Al ₂ O ₃ -Al material with the fluorine coating layer was dried naturally for 1 h in the air, followed by hot air drying at 80° C. for 4 hours, and then the withstand voltage and cracks were checked. The method of measuring the withstand voltage and checking the crack is the same as described above.

The results are shown in Table 4 below.

AAO film coating layer withstand voltage crack Comparative Example 1 50um doesn't exist 1.12 doesn't exist Comparative Example 2 80um doesn't exist 1.14 doesn't exist Comparative Example 3 doesn't exist Al ₂ O ₃ -fluorine coating solution 1.08 occurred

As shown in Table 4, when there is no coating layer according to the present invention or no AAO film, the magnitude of the withstand voltage is remarkably small, and it was confirmed that cracks occurred in the absence of the AAO film.

Although the present invention has been shown and described in relation to specific preferred embodiments, the present invention may be modified and changed in various ways without departing from the technical features or fields of the present invention provided by the following claims. It will be apparent to one of ordinary skill in the art.

Claims (12)

delete delete delete 90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin; and
1 to 3 parts by weight of aluminum oxide as an inorganic agent (aluminum oxide, Al ₂ O ₃ ); Containing, a coating composition for protecting an anodized layer.
5. The method of claim 4,
The coating composition for protecting the anodization layer, characterized in that it further comprises 10 parts by weight of ispropyl alcohol (IPA) in which the aluminum oxide is dispersed.
5. The method of claim 4,
The aluminum oxide is mixed with a hydrofluoric acid solution, and then surface-modified by filtration under reduced pressure, the coating composition for the protection of the anodization layer.
90 parts by weight of a coating solution containing fluorobutane as a solvent and tetrafluoroethylene as a fluororesin; and
As an inorganic agent, yttrium oxide (Yttrium (III) oxide, Y ₂ O ₃ ) 0.1 to 0.6 parts by weight; Containing, a coating composition for protecting an anodized layer.
8. The method of claim 7,
The coating composition for protecting the anodization layer, characterized in that it further comprises 10 parts by weight of isopropyl alcohol (IPA) in which the yttrium oxide is dispersed.
8. The method of claim 7,
The yttrium oxide is mixed with a hydrofluoric acid solution and then surface-modified by filtration under reduced pressure, the coating composition for the protection of the anodization layer.
10. The method according to any one of claims 4 to 9,
To protect the anodization layer formed on the parts of semiconductor manufacturing equipment,
A coating composition for protecting the anodization layer of semiconductor manufacturing equipment parts.
parts of semiconductor manufacturing equipment;
an anodization layer formed on the surface of the component; and
A component of a semiconductor manufacturing equipment comprising a; by the composition according to any one of claims 4 to 9, a protective coating layer formed on the surface of the anodization layer.
12. The method of claim 11,
The anodization layer is an anodic aluminum oxide (AAO) film formed by anodizing aluminum, a component of a semiconductor manufacturing equipment, characterized in that.

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