KR20210049870A - Negative photosensitive resin composition, and semiconductor device using same - Google Patents

Abstract

The negative photosensitive resin composition of the present invention is a negative photosensitive resin composition for film formation containing an epoxy resin, a phenoxy resin, and a photoacid generator.

Description

Negative photosensitive resin composition, and semiconductor device using same

The present invention relates to a negative photosensitive resin composition and a semiconductor device using the same.

Various developments have been made so far in photosensitive resin compositions. As a technique of this kind, for example, the technique described in Patent Document 1 is known. In Patent Document 1, a photosensitive resin composition containing an epoxy resin, a phenol resin, and a photopolymerization initiator is described (Table 1 of Patent Document 1).

Patent Document 1: WO2014/010204

However, as a result of investigation by the present inventors, it was found that in the photosensitive resin composition described in Patent Document 1, there is room for improvement in terms of heat resistance reliability and patterning properties.

When the present inventor further studied, in the negative photosensitive resin composition, when an epoxy resin and a phenol resin were used in combination, the pattern shape was improved, but it was found that the water absorption rate increased. Moreover, when an epoxy resin is used alone without using a phenol resin together, an increase in the water absorption rate can be suppressed, but conversely, there is a concern that the pattern shape will become defective.

Based on the relationship between the heat-resistance reliability and patterning property trade-off, we studied the appropriate combination of resins, and found that the combination of an epoxy resin and a phenoxy resin resulted in a better pattern shape while suppressing an increase in water absorption. Thus, the present invention has been completed.

According to the present invention,

As a negative photosensitive resin composition for film formation,

With epoxy resin,

With phenoxy resin,

A negative photosensitive resin composition containing a photoacid generator is provided.

According to the present invention, a negative photosensitive resin composition excellent in heat resistance reliability and patterning property, and a semiconductor device using the same are provided.

The above-described objects and other objects, features, and advantages are further clarified by preferred embodiments described below and the following drawings accompanying them.
1 is a longitudinal sectional view showing an example of the configuration of a semiconductor device of the present embodiment.
FIG. 2 is a partially enlarged view of a region enclosed by a chain line in FIG. 1.
3 is a process chart showing a method of manufacturing the semiconductor device shown in FIG. 1.
4 is a diagram for describing a method of manufacturing the semiconductor device shown in FIG. 1.
5 is a diagram for describing a method of manufacturing the semiconductor device shown in FIG. 1.
6 is a diagram for describing a method of manufacturing the semiconductor device shown in FIG. 1.
7 is a partially enlarged cross-sectional view showing a first modified example of the semiconductor device according to the embodiment.
8 is a partially enlarged cross-sectional view showing a second modified example of the semiconductor device according to the embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all the drawings, the same components are denoted by the same reference numerals, and explanations are omitted as appropriate. In addition, the drawings are schematic diagrams and do not coincide with actual dimensional ratios.

The outline of the photosensitive resin composition of this embodiment is shown.

The photosensitive resin composition of this embodiment is a negative photosensitive resin composition for film formation containing an epoxy resin, a phenoxy resin, and a photoacid generator.

As a result of the examination of the present inventor, the following knowledge was found.

In the negative photosensitive resin composition, from the viewpoint of enhancing the patterning property, if the "epoxy resin" and the "phenol resin" that accelerates the polymerization reaction of the epoxy resin are used together, a good pattern shape can be realized, but the water absorption rate increases, It was found that the heat resistance reliability was deteriorated.

Although the detailed mechanism is not clear, the crosslinking reaction between the epoxy resins proceeds during exposure, and most of the epoxy resin is consumed before curing. It is considered that the phenol resin having a oxy group remains without reacting as a factor that increases the water absorption.

On the other hand, if the "epoxy resin" alone is used without using a phenol resin together, an increase in water absorption can be suppressed, but on the contrary, the patterning property will deteriorate.

Therefore, on the basis of the relationship between the trade-off of patterning property and heat resistance reliability, intensive examination was conducted on the component used in combination with the epoxy resin. As a result, it was found that patterning property and heat resistance reliability can be improved by using "epoxy resin" and "phenoxy resin" together.

Although the detailed mechanism is not clear, the following cases are considered.

In the epoxy resin alone system, the reaction speed at the time of PEB is fast, the reaction proceeds wider than the exposure range, and tends to be narrower than the target opening diameter. In particular, since the reaction proceeds more rapidly toward the upper portion of the film where the activation of PAG is likely to proceed, the opening shape tends to be reverse taper. On the other hand, since such an excessive reaction can be suppressed by using a phenoxy resin together with an epoxy resin, it is thought that a favorable pattern shape can be obtained and patterning property can be improved. And, compared with the case where a phenol resin was used together, an increase in water absorption can be suppressed.

According to the photosensitive resin composition of this embodiment, since heat resistance reliability and patterning property can be improved, a semiconductor device excellent in connection reliability and an electronic device using the same can be realized.

In addition, the photosensitive resin composition of the present embodiment is expected to be suitably used in order to constitute an insulating layer of a redistribution layer formed on a semiconductor chip or the like.

The resin film of the photosensitive resin composition of the present embodiment is used in an electric/electronic device (electronic device), for example, as a permanent film, a protective film, an insulating film, a rewiring material, or the like. This resin film contains a cured film cured by heating.

Here, the term "electric/electronic device" refers to a semiconductor chip, a semiconductor element, a printed wiring board, an electric circuit, a display device such as a television receiver or a monitor, an information communication terminal, a light emitting diode, a physical cell, a chemical cell, etc., of electronic engineering. It refers to devices, devices, final products, and other equipment related to electricity to which the technology is applied.

Among these, the photosensitive resin composition of this embodiment can be suitably used, for example for the photosensitive resin composition for bump protective films. A resin film provided around electrical connection elements such as bumps, lands, and wiring is collectively referred to as "bump protective film". The photosensitive resin composition for a bump protective film refers to a resin composition used to form a bump protective film.

Moreover, as a specific example of a bump protective film, a passivation film, an overcoat film, an interlayer insulating film etc. provided around an electrical connection element are mentioned, for example. Moreover, although the resin film is provided on the semiconductor chip, it may be provided close to the semiconductor chip, or may be provided at a position away from the semiconductor chip such as a redistribution layer or a build-up wiring layer.

Next, details of the photosensitive resin composition of the present embodiment will be described.

(Epoxy resin)

The photosensitive resin composition of this embodiment contains an epoxy resin. Thereby, the film physical properties and workability in the resin film of the photosensitive resin composition can be improved.

As the epoxy resin, for example, an epoxy resin having two or more epoxy groups per molecule can be used. As for the epoxy resin, monomers, oligomers, and all polymers can be used, and the molecular weight and molecular structure are not particularly limited.

Examples of the epoxy resin include phenol novolak type epoxy resin, cresol novolak type epoxy resin, cresol naphthol type epoxy resin, biphenyl type epoxy resin, biphenylaralkyl type epoxy resin, naphthalene skeleton type epoxy resin, bisphenol A type Epoxy resin, bisphenol A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F diglycidyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, glycidyl ether type epoxy resin, Cresol novolak type epoxy resin, aromatic polyfunctional epoxy resin, aliphatic epoxy resin, aliphatic polyfunctional epoxy resin, alicyclic epoxy resin, polyfunctional alicyclic epoxy resin, and the like. Epoxy resin may be used individually or may be used in combination of multiple.

The epoxy resin may include a solid epoxy resin having two or more epoxy groups in the molecule. As said solid epoxy resin, what has two or more epoxy groups, and what is solid at 25 degreeC (room temperature) can be used. Thereby, the mechanical properties in the resin film of the photosensitive resin composition can be improved.

Moreover, as an epoxy resin, a trifunctional or more polyfunctional epoxy resin (that is, a polyfunctional epoxy resin having 3 or more epoxy groups in 1 molecule) can be contained in a molecule|numerator.

As a trifunctional or higher polyfunctional epoxy resin, for example, a phenol novolac type epoxy resin, a cresol novolac type epoxy resin, a triphenylmethane type epoxy resin, a dicyclopentadiene type epoxy resin, a bisphenol A type epoxy resin, and a tetra It is preferable to contain at least one type of epoxy resin selected from the group consisting of methylbisphenol F type epoxy resins, more preferably novolac type epoxy resins. Thereby, it is possible to realize an appropriate coefficient of thermal expansion while improving the heat resistance of the resin film.

In addition, the epoxy resin may contain a liquid epoxy resin having two or more epoxy groups in the molecule. The liquid epoxy resin functions as a filming agent and can improve the brittleness of the resin film of the photosensitive resin composition.

As the liquid epoxy resin, it has two or more epoxy groups, and a liquid epoxy compound at room temperature of 25°C can be used. The viscosity at 25°C of this liquid epoxy resin is, for example, 1 mPa·s to 8000 mPa·s, preferably 5 mPa·s to 1500 mPa·s, and more preferably 10 mPa·s to 1400 mPa·s. I can.

Examples of the liquid epoxy resin include at least one selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyl diglycidyl ether, and alicyclic epoxy. I can. These may be used alone, or two or more may be used in combination. Among these, from the viewpoint of reducing cracks after development, alkyl diglycidyl ether can be used.

The epoxy equivalent of the liquid epoxy resin is, for example, 100 g/eq or more and 200 g/eq or less, preferably 105 g/eq or more and 180 g/eq or less, and more preferably 110 g/eq or more and 170 g/eq or less. Thereby, the brittleness of the resin film can be improved.

The lower limit of the content of the liquid epoxy resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more in the whole nonvolatile component of the photosensitive resin composition. Thereby, the brittleness of the cured film finally obtained can be improved. On the other hand, the upper limit of the content of the liquid epoxy resin is, for example, 40% by mass or less, preferably 35% by mass or less, and more preferably 30% by mass or less in the entire nonvolatile component of the photosensitive resin composition. Thereby, it is possible to achieve a balance of the film properties of the cured film.

The lower limit of the content of the epoxy resin is, for example, 40% by mass or more, preferably 45% by mass or more, and more preferably 50% by mass or more in all nonvolatile components of the photosensitive resin composition. Thereby, the heat resistance and mechanical strength of the cured film finally obtained can be improved. On the other hand, the upper limit of the content of the epoxy resin is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 82% by mass or less in the entire nonvolatile component of the photosensitive resin composition. Thereby, the patterning property can be improved.

In this embodiment, the nonvolatile component of the photosensitive resin composition refers to the remainder excluding volatile components such as water and solvent. The content of the photosensitive resin composition with respect to the entire nonvolatile component refers to the content of the photosensitive resin composition with respect to the entire nonvolatile component excluding the solvent when a solvent is included.

Although the weight average molecular weight (Mw) of the said epoxy resin is not specifically limited, For example, it is preferable that it is 300-9000, and it is more preferable that it is 500-8000. By using a relatively low molecular weight epoxy resin, the reactivity at the time of exposure can be improved.

Moreover, the photosensitive resin composition of this embodiment may contain other thermosetting resins other than the said epoxy resin. Examples of other thermosetting resins include resins having a triazine ring such as urea (urea) resin and melamine resin; Unsaturated polyester resin; Maleimide resins such as bismaleimide compounds; Polyurethane resin; Diallylphthalate resin; Silicone resin; Benzoxazine resin; Polyimide resin; Polyamideimide resin; Cyanate esters such as cyanate resins such as benzocyclobutene resin, novolak type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, tetramethylbisphenol F type cyanate resin, etc. Resin, etc. are mentioned. These may be used alone, or two or more may be used in combination.

(Phenoxy resin)

The photosensitive resin composition of this embodiment contains a phenoxy resin. Thereby, the flexibility of the resin film of the photosensitive resin composition can be improved.

Although the weight average molecular weight (Mw) of the said phenoxy resin is not specifically limited, For example, it is preferable that it is 10000-100000, and it is more preferable that it is 20000-80000. By using such a relatively high molecular weight phenoxy resin, it is possible to impart good flexibility to the resin film and to impart sufficient solubility to the solvent.

In addition, in this embodiment, the weight average molecular weight is measured as a polystyrene conversion value by gel permeation chromatography (GPC) method, for example.

Moreover, as a phenoxy resin, you may have reactive groups, such as an epoxy group, in both ends of a molecular chain or inside a molecular chain. The reactive group in the phenoxy resin is capable of crosslinking reaction with the epoxy group in the epoxy resin. By using such a phenoxy resin, the solvent resistance and heat resistance in a resin film can be improved.

Moreover, as a phenoxy resin, what is solid at 25 degreeC is used preferably. Specifically, a phenoxy resin having a nonvolatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

Examples of the phenoxy resin include bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, bisphenol A type and bisphenol F type copolymer phenoxy resin, biphenyl type phenoxy resin, bisphenol S type phenoxy resin, Copolymerized phenoxy resins of biphenyl-type phenoxy resin and bisphenol S-type phenoxy resin, and the like, and one or a mixture of two or more of them is used. Among these, a bisphenol A-type phenoxy resin or a copolymerized phenoxy resin of a bisphenol A-type and bisphenol F-type is preferably used.

The lower limit of the content of the phenoxy resin is, for example, 10 parts by mass or more, preferably 13 parts by mass or more, and more preferably 15 parts by mass or more, based on 100 parts by mass of the epoxy resin content. Thereby, patterning property can be improved. Moreover, flexibility can be improved. On the other hand, the upper limit of the content of the phenoxy resin is, for example, 60 parts by mass or less, preferably 50 parts by mass or less, and more preferably 40 parts by mass or less, based on 100 parts by mass of the epoxy resin content. Thereby, it is possible to suppress an increase in the moisture absorption rate and improve the heat resistance reliability. In addition, it is possible to realize a photosensitive resin composition having excellent coatability by increasing the solubility of the phenoxy resin. In addition, the epoxy resin serving as the reference may be a polyfunctional epoxy resin having a trifunctional or higher function.

Moreover, the photosensitive resin composition of this embodiment may contain thermoplastic resins other than the said phenoxy resin. Examples of this thermoplastic resin include polyvinyl acetal resin, acrylic resin, polyamide resin (e.g. nylon, etc.), thermoplastic urethane resin, polyolefin resin (e.g. polyethylene, polypropylene, etc.), polycarbonate, polyester. Resins (e.g., polyethylene terephthalate, polybutylene terephthalate, etc.), polyacetal, polyphenylene sulfide, polyetheretherketone, liquid crystal polymer, fluorine resin (e.g., polytetrafluoroethylene, polyfluoride) Vinylidene, etc.), modified polyphenylene ether, polysulfone, polyethersulfone, polyarylate, polyamideimide, polyetherimide, and thermoplastic polyimide. These may be used alone, or two or more may be used in combination.

(Mine generator)

The photosensitive resin composition of this embodiment contains a photoacid generator. This makes it possible to improve workability in patterning such as sensitivity and resolution.

The photosensitive resin composition of this embodiment is a chemically amplified photosensitive resin composition using an acid generated from a photoacid generator as a catalyst, and can be used as a negative photosensitive resin composition.

Examples of the photosensitive agent include an onium salt compound. More specifically, iodonium salts such as diazonium salts and diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylpyryllium salts, benzylpyridinium thiocyanate, dialkylphenacylsulfonium salts, And cationic photopolymerization initiators such as dialkylhydroxyphenylphosphonium salts. Among these, from the viewpoint of patterning properties, a triaryl sulfonium salt can be used.

As the counter anion of the onium salt compound, a borate anion, a sulfonate anion, a gallate anion, a phosphorus anion, an antimony anion, and the like are used.

The content of the photoacid generator is, for example, 0.3% by mass to 5.0% by mass, preferably 0.5% by mass to 4.5% by mass, more preferably 1.0% by mass to 4.0% by mass, based on the total solid content of the photosensitive resin composition. to be. By setting it as more than the said lower limit, patterning property can be improved. On the other hand, insulation reliability can be improved by making it below the said lower limit.

In this specification, "~" represents what includes an upper limit value and a lower limit value, unless otherwise specified.

The photosensitive resin composition of this embodiment may contain another photosensitive agent of the said photoacid generator.

(Surfactants)

The photosensitive resin composition of this embodiment can contain a surfactant. By including a surfactant, the wettability at the time of coating is improved, and a uniform resin film and a cured film can be obtained. Examples of the surfactant include a fluorine-based surfactant, a silicone-based surfactant, an alkyl-based surfactant, and an acrylic surfactant.

It is preferable that the surfactant contains a surfactant containing at least any one of a fluorine atom and a silicon atom. Thereby, in addition to obtaining a uniform resin film (improving coating property) and improving developability, it also contributes to improvement of adhesive strength. As such a surfactant, it is preferable that it is a nonionic surfactant containing at least any one of a fluorine atom and a silicon atom, for example. Commercially available products that can be used as surfactants include, for example, F-251, F-253, F-281, F-430, F-477, F-551, F-552, of the "Megapak" series manufactured by DIC Corporation. F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F-565, F- 568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94, etc., containing fluorine Oligomer-structured surfactants, fluorine-containing nonionic surfactants such as Neos Co., Ltd. Ptergent 250 and Ptergent 251, SILFOAM (registered trademark) series (e.g. SD 100 TS, SD 670, SD 850, SD 860, SD 882) and other silicone-based surfactants.

The content of the surfactant can be, for example, 0.001 to 1% by mass, preferably 0.005 to 0.5% by mass, in the total amount of the nonvolatile component of the photosensitive resin composition.

(Adhesion preparation)

The photosensitive resin composition of this embodiment can contain an adhesion aid. Thereby, the adhesiveness with an inorganic material can be improved further.

The adhesion aid is not particularly limited, for example, using a silane coupling agent such as aminosilane, epoxysilane, acrylsilane, mercaptosilane, vinylsilane, ureidosilane, or sulfidesilane. I can. A silane coupling agent may be used individually by 1 type, and may use 2 or more types together. Among these, it is more preferable to use an epoxysilane (that is, a compound containing both an epoxy moiety and a group generating a silanol group by hydrolysis in one molecule).

Examples of the amino group-containing coupling agent include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, and γ- Aminopropylmethyldiethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropyltrie Toxoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltri Methoxysilane, etc. are mentioned.

Examples of the epoxy group-containing coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane. Phosphorus, γ-glycidyl propyl trimethoxysilane, and the like.

Examples of the acrylic group-containing coupling agent or methacrylic group-containing coupling agent include γ-(methacryloxypropyl)trimethoxysilane, γ-(methacryloxypropyl)methyldimethoxysilane, and γ-(methacryloxypropyl) And acryloxypropyl)methyldiethoxysilane.

Examples of the mercapto group-containing coupling agent include 3-mercaptopropyl trimethoxysilane.

Examples of the vinyl group-containing coupling agent include vinyl tris (β-methoxyethoxy) silane, vinyl triethoxysilane, vinyl trimethoxysilane, and the like.

Examples of the ureido group-containing coupling agent include 3-ureidopropyl triethoxysilane.

Examples of the sulfide group-containing coupling agent include bis(3-(triethoxysilyl)propyl)disulfide and bis(3-(triethoxysilyl)propyl)tetrasulfide.

Examples of the acid anhydride-containing coupling agent include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, and 3-dimethylmethoxysilylpropyl succinic anhydride.

In addition, although a silane coupling agent was enumerated here, a titanium coupling agent, a zirconium coupling agent, etc. may be sufficient.

The content of the adhesion aid is, for example, preferably 0.3 to 5% by mass, more preferably 0.4 to 4%, and more preferably 0.5 to 3% by mass of the total amount of the nonvolatile component of the photosensitive resin composition. It can be done with.

(additive)

In addition to the above components, other additives may be added to the photosensitive resin composition of the present embodiment as necessary. Examples of other additives include antioxidants, fillers such as silica, sensitizers, and film agents.

(solvent)

The photosensitive resin composition of this embodiment can contain a solvent. An organic solvent may be included as a solvent. As the organic solvent, any component of the photosensitive resin composition can be dissolved, and any component that does not chemically react with each component can be used without particular limitation.

As an organic solvent, for example, acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol Lycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene And glycol monomethyl ether acetate, dipropylene glycol methyl-n-propyl ether, butyl acetate, and γ-butyrolactone. These may be used individually or may be used in combination of multiple.

The solvent is preferably used so that the concentration of the total amount of nonvolatile components in the photosensitive resin composition is, for example, 30 to 75% by mass. By setting it as this range, each component can be fully dissolved, and favorable coatability can be ensured. In addition, by adjusting the content of the nonvolatile component, the viscosity of the photosensitive resin composition can be appropriately controlled.

The viscosity at 25°C of the varnish-like photosensitive resin composition is, for example, 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. By making the viscosity within the above numerical range, the thickness of the coating film can be appropriately controlled. For example, a thickness of 1 μm to 100 μm, preferably 3 μm to 80 μm, and more preferably 5 μm to 50 μm can be realized.

Next, the semiconductor device and electronic device of the present embodiment will be described.

1 is a longitudinal sectional view showing an example of the semiconductor device of the present embodiment. In addition, FIG. 2 is a partially enlarged view of a region surrounded by a chain line in FIG. 1. In the following description, the upper side is referred to as "upper" and the lower side is referred to as "lower" in FIG. 1.

The semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through-electrode substrate 2 and a semiconductor package 3 mounted thereon.

The through-electrode substrate 2 includes an insulating layer 21, a plurality of through wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21, and a semiconductor chip 23 embedded in the insulating layer 21. ), the lower wiring layer 24 provided on the lower surface of the insulating layer 21, the upper wiring layer 25 provided on the upper surface of the insulating layer 21, and the solder bump 26 provided on the lower surface of the lower wiring layer 24. We have.

The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, and a bonding wire 33 electrically connecting the semiconductor chip 32 and the package substrate 31. ), an encapsulation layer 34 in which a semiconductor chip 32 or a bonding wire 33 is embedded, and a solder bump 35 provided on a lower surface of the package substrate 31.

In addition, the semiconductor package 3 is stacked on the through electrode substrate 2. Thereby, the solder bump 35 of the semiconductor package 3 and the upper wiring layer 25 of the through electrode substrate 2 are electrically connected.

In such a semiconductor device 1, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, it is possible to easily achieve a low profile. For this reason, it can also contribute to miniaturization of the electronic device incorporating the semiconductor device 1.

Further, since the through-electrode substrate 2 and the semiconductor package 3 having different semiconductor chips are stacked, the mounting density per unit area can be increased. For this reason, it is possible to achieve both miniaturization and high performance.

Hereinafter, the through electrode substrate 2 and the semiconductor package 3 will be described in more detail.

The lower wiring layer 24 and the upper wiring layer 25 included in the through-electrode substrate 2 shown in Fig. 2 each include an insulating layer, a wiring layer, a through wiring, and the like. Thereby, the lower wiring layer 24 and the upper wiring layer 25 include wirings inside or on the surface, and electrical connection between them is achieved through the through wiring 221 penetrating the insulating layer 21.

The wiring layer included in the lower wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26. For this reason, the lower wiring layer 24 functions as a redistribution layer of the semiconductor chip 23 and the solder bump 26 functions as an external terminal of the semiconductor chip 23.

The through wiring 221 shown in FIG. 2 is provided so as to penetrate the insulating layer 21 as described above. Thereby, since the lower wiring layer 24 and the upper wiring layer 25 are electrically connected and the through electrode substrate 2 and the semiconductor package 3 can be stacked, the semiconductor device 1 can be highly functional. I can.

The wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 and the solder bump 35. For this reason, the upper wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a redistribution layer of the semiconductor chip 23, and between the semiconductor chip 23 and the package substrate 31 It also functions as an interposer. The cured film of the photosensitive resin composition of the present embodiment can be used to constitute the insulating layer of the redistribution layer.

According to this embodiment, the semiconductor chip 23 and the rewiring layer (upper wiring layer 25) provided on the surface of the semiconductor chip 23 are provided, and the insulating layer in the rewiring layer is photosensitive in the present embodiment. A semiconductor device composed of a cured product of a resin composition can be realized.

When the through wiring 221 passes through the insulating layer 21, an effect of reinforcing the insulating layer 21 is obtained. For this reason, even when the mechanical strength of the lower wiring layer 24 or the upper wiring layer 25 is low, a decrease in the mechanical strength of the entire through-electrode substrate 2 can be avoided. As a result, it is possible to further reduce the thickness of the lower wiring layer 24 and the upper wiring layer 25, and further reduce the size of the semiconductor device 1.

In addition, the semiconductor device 1 shown in FIG. 1 includes, in addition to the through wiring 221, a through wiring 222 provided to penetrate the insulating layer 21 located on the upper surface of the semiconductor chip 23. Thereby, electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.

The insulating layer 21 is provided so as to cover the semiconductor chip 23. Thereby, the effect of protecting the semiconductor chip 23 is enhanced. As a result, the reliability of the semiconductor device 1 can be improved. Further, a semiconductor device 1 that can be easily applied to a mounting method such as the package-on-package structure according to the present embodiment is obtained.

The diameter W (refer to FIG. 2) of the through wiring 221 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. Accordingly, the conductivity of the through wiring 221 can be ensured without impairing the mechanical properties of the insulating layer 21.

The semiconductor package 3 shown in FIG. 1 may be any type of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package) ), LF-BGA (Lead Flame BGA), and the like.

The arrangement of the semiconductor chips 32 is not particularly limited, but as an example, a plurality of semiconductor chips 32 are stacked in FIG. 1. Thereby, an increase in the mounting density is attained. Further, the plurality of semiconductor chips 32 may be arranged in parallel in the planar direction, or may be arranged in parallel in the planar direction while being stacked in the thickness direction.

The package substrate 31 may be any substrate, but becomes, for example, a substrate including an insulating layer, a wiring layer, a through wiring, and the like (not shown). Among these, the solder bump 35 and the bonding wire 33 can be electrically connected through the through wiring.

The sealing layer 34 is made of a known sealing resin material, for example. By providing such an encapsulation layer 34, it is possible to protect the semiconductor chip 32 or the bonding wire 33 from external force or an external environment.

In addition, since the semiconductor chip 23 included in the through electrode substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are disposed in close proximity to each other, advantages such as high speed and low loss of mutual communication are achieved. You can nostalgic (享受). From this point of view, for example, of the semiconductor chip 23 and the semiconductor chip 32, one of the CPU (Central Processing Unit), GPU (Graphics Processing Unit), and AP (Application Processor) is used as an arithmetic element, and the other is If a memory element such as a DRAM (Dynamic Random Access Memory) or a flash memory is used, these elements can be placed adjacent to each other in the same device. Thus, it is possible to realize the semiconductor device 1 in which high functionality and miniaturization are both achieved.

<Method of manufacturing semiconductor device>

Next, a method of manufacturing the semiconductor device 1 shown in FIG. 1 will be described.

3 is a process chart showing a method of manufacturing the semiconductor device 1 shown in FIG. 1. 4 to 6 are diagrams for explaining a method of manufacturing the semiconductor device 1 shown in FIG. 1, respectively.

The manufacturing method of the semiconductor device 1 includes a chip arrangement step S1 of obtaining an insulating layer 21 so as to bury the semiconductor chip 23 and the through wirings 221 and 222 provided on the substrate 202, and the insulating layer 21. ) Upper wiring layer forming step S2 of forming the upper wiring layer 25 on the upper and semiconductor chip 23, substrate peeling step S3 of peeling off the substrate 202, and lower wiring layer forming step of forming the lower wiring layer 24 S4, a solder bump forming step S5 for forming the solder bumps 26 to obtain the through-electrode substrate 2, and a lamination step S6 for laminating the semiconductor package 3 on the through-electrode substrate 2.

Among them, in the upper wiring layer forming step S2, a photosensitive resin varnish 5 (varnish-like photosensitive resin composition) is disposed on the insulating layer 21 and the semiconductor chip 23, and a photosensitive resin layer 2510 is obtained. 1 resin film arranging process S20, a first exposure process S21 that exposes the photosensitive resin layer 2510, a first development process S22 that performs a development process on the photosensitive resin layer 2510, and a photosensitive resin layer ( A photosensitive resin varnish 5 is disposed on the first curing step S23 of performing a curing treatment on 2510), the wiring layer forming step S24 of forming the wiring layer 253, and the photosensitive resin layer 2510 and the wiring layer 253. , A second resin film arranging step S25 for obtaining the photosensitive resin layer 2520, a second exposure step S26 for subjecting the photosensitive resin layer 2520 to exposure treatment, and a third agent for performing a development treatment on the photosensitive resin layer 2520 2 developing process S27, 2nd hardening process S28 which hardens|cures the photosensitive resin layer 2520, and a through-wire formation process S29 which forms a through-line 254 in the opening part 424 (through hole). .

Hereinafter, each process will be sequentially described. In addition, the following manufacturing method is an example, and is not limited thereto.

[1] Chip placement process S1

First, as shown in Fig. 4A, the substrate 202, the semiconductor chips 23 and through wirings 221 and 222 provided on the substrate 202, and the insulating layer 21 provided to bury them. A chip buried structure 27 is prepared.

Although it does not specifically limit as a constituent material of the substrate 202, For example, a metal material, a glass material, a ceramic material, a semiconductor material, an organic material, etc. are mentioned. Further, for the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used.

The semiconductor chip 23 is adhered on the substrate 202. In the present manufacturing method, as an example, a plurality of semiconductor chips 23 are provided side by side on the same substrate 202 while being spaced apart from each other. The plurality of semiconductor chips 23 may be of the same type or may be of different types. In addition, the substrate 202 and the semiconductor chip 23 may be fixed through an adhesive layer (not shown) such as a die attach film.

Further, if necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23. The interposer functions as a redistribution layer of the semiconductor chip 23, for example. Therefore, the interposer may be provided with a pad (not shown) for electrically connecting with the electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and the arrangement pattern of the semiconductor chip 23 can be changed, and the degree of freedom in designing the semiconductor device 1 can be further increased.

As such an interposer, for example, a silicon substrate, a ceramic substrate, an inorganic substrate such as a glass substrate, an organic substrate such as a resin substrate, or the like is used.

The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin as mentioned as a component of the photosensitive resin composition, or may be a conventional encapsulant used in the technical field of semiconductors.

Examples of the material constituting the through wirings 221 and 222 include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy.

Further, a chip buried structure 27 manufactured by a method different from the above may be prepared.

[2] Upper wiring layer forming step S2

Next, an upper wiring layer 25 is formed on the insulating layer 21 and on the semiconductor chip 23.

[2-1] First resin film arrangement step S20

First, as shown in FIG. 4B, a photosensitive resin varnish 5 is applied (arranged) on the insulating layer 21 and on the semiconductor chip 23. Thereby, as shown in FIG. 4(c), a liquid film of the photosensitive resin varnish 5 is obtained. About the photosensitive resin varnish 5, it is the photosensitive resin composition of this embodiment, and it is a varnish which has photosensitivity.

The photosensitive resin varnish 5 is applied using, for example, a spin coater, a bar coater, a spray device, an ink jet device, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 (see Fig. 4D) can be formed. As a result, the upper wiring layer 25 can be made thinner, and the thickness reduction of the semiconductor device 1 becomes easy.

In addition, the viscosity of the photosensitive resin varnish 5 is a value measured under conditions of a rotation speed of 100 rpm using, for example, a cone plate viscometer (TV-25, manufactured by Toki Sangyo).

Next, the liquid film of the photosensitive resin varnish 5 is dried. Thereby, the photosensitive resin layer 2510 shown to FIG. 4D is obtained.

Although the drying conditions of the photosensitive resin varnish 5 are not specifically limited, For example, conditions of heating at a temperature of 80-150 degreeC for 1-60 minutes are mentioned.

In addition, in this process, instead of the process of applying the photosensitive resin varnish 5, a process of disposing a photosensitive resin film obtained by forming a film of the photosensitive resin varnish 5 may be adopted. The photosensitive resin film is the photosensitive resin composition of this embodiment, and is a resin film which has photosensitivity.

The photosensitive resin film is produced, for example, by applying the photosensitive resin varnish 5 on a base such as a carrier film by various coating devices, and then drying the obtained coating film.

After forming the photosensitive resin layer 2510 in this way, the photosensitive resin layer 2510 is subjected to pre-exposure heat treatment as necessary. By performing the heat treatment before exposure, the molecules contained in the photosensitive resin layer 2510 are stabilized, and the reaction in the first exposure step S21 described later can be stabilized. Further, on the other hand, by heating under heating conditions as described later, the adverse effect on the photoacid generator by heating can be minimized.

The temperature of the heat treatment before exposure is preferably 70 to 130°C, more preferably 75 to 120°C, and still more preferably 80 to 110°C. If the temperature of the pre-exposure heat treatment is less than the above lower limit, there is a fear that the purpose of stabilizing molecules by pre-exposure heat treatment may not be achieved. On the other hand, when the temperature of the pre-exposure heat treatment exceeds the above upper limit, the movement of the photoacid generator becomes excessively active, and the influence that acid is less likely to be generated even when light is irradiated in the first exposure step S21 to be described later becomes widespread. There is a fear that the processing precision may be deteriorated.

In addition, the time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment, but at the above temperature, it is preferably 1 to 10 minutes, more preferably 2 to 8 minutes, and more preferably Is 3 to 6 minutes. If the time for the pre-exposure heat treatment is less than the above lower limit, the heating time is insufficient, and there is a fear that the purpose of stabilization of molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the time of the pre-exposure heat treatment exceeds the above upper limit, the heating time is excessively long, so even if the temperature of the pre-exposure heat treatment falls within the above range, the action of the photoacid generator may be impaired.

In addition, the atmosphere for the heat treatment is not particularly limited, and may be an inert gas atmosphere or a reducing gas atmosphere, but it is under the atmosphere in consideration of work efficiency and the like.

In addition, the atmospheric pressure is not particularly limited, and the pressure may be reduced or pressurized. However, the atmospheric pressure is taken in consideration of work efficiency and the like. In addition, the normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-2] First exposure step S21

Next, exposure treatment is performed on the photosensitive resin layer 2510.

First, as shown in FIG. 4D, a mask 412 is disposed in a predetermined area on the photosensitive resin layer 2510. Then, light (activating radiation) is irradiated through the mask 412. Thereby, exposure treatment is performed on the photosensitive resin layer 2510 according to the pattern of the mask 412.

In addition, in FIG. 4(d), the case where the photosensitive resin layer 2510 has so-called negative-type photosensitivity is shown. In this example, solubility in a developer is imparted to a region of the photosensitive resin layer 2510 corresponding to the light-shielding portion of the mask 412.

On the other hand, in the region corresponding to the transmissive portion of the mask 412, acid is generated, for example, by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction of the thermosetting resin in the process described later.

In addition, the exposure amount in the exposure treatment is not particularly limited, but ^{it is preferably 100 to 2000 mJ/cm 2} , and more preferably 200 to 1000 mJ/cm ² . Thereby, insufficient exposure and excessive exposure in the photosensitive resin layer 2510 can be suppressed. As a result, it is possible to finally realize high patterning precision.

Thereafter, if necessary, a heat treatment is performed after exposure to the photosensitive resin layer 2510.

The temperature of the heat treatment after exposure is not particularly limited, but is preferably 50 to 150°C, more preferably 50 to 130°C, more preferably 55 to 120°C, and particularly preferably 60 It becomes ~110℃. By performing heat treatment after exposure at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be reacted sufficiently in a shorter time. By setting the temperature within the above range, it is possible to suppress a decrease in patterning processing accuracy due to acceleration of acid diffusion.

In addition, by setting the temperature of the heat treatment after exposure to be equal to or higher than the above lower limit, the reaction rate of the thermosetting resin can be increased and productivity can be increased. On the other hand, by setting the temperature of the heat treatment after exposure to be equal to or less than the above upper limit, it is possible to suppress a decrease in the processing precision of patterning due to acceleration of acid diffusion.

On the other hand, the time of the heat treatment after exposure is appropriately set according to the temperature of the heat treatment after exposure, but at the above temperature, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, and more preferably Is 3 to 15 minutes. By performing heat treatment after exposure for such a time, the thermosetting resin can be sufficiently reacted, and diffusion of the acid can be suppressed to suppress a decrease in patterning processing precision.

In addition, the atmosphere of the heat treatment after exposure is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is under the atmosphere in consideration of work efficiency and the like.

In addition, the atmospheric pressure of the post-exposure heat treatment is not particularly limited, and the pressure may be reduced or pressurized. However, the atmospheric pressure is taken into consideration of work efficiency and the like. Thereby, heat treatment before exposure can be performed relatively easily. In addition, the normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-3] First developing step S22

Next, the photosensitive resin layer 2510 is subjected to a developing treatment. As a result, an opening 423 penetrating the photosensitive resin layer 2510 is formed in a region corresponding to the light-shielding portion of the mask 412 (see Fig. 5(e)).

As a developer, an organic developer, a water-soluble developer, etc. are mentioned, for example.

[2-4] 1st hardening process S23

After the development treatment, the photosensitive resin layer 2510 is subjected to a curing treatment (heat treatment after development). The conditions of the curing treatment are not particularly limited, but the heating temperature is about 160 to 250°C, and the heating time is about 30 to 240 minutes. Thereby, the photosensitive resin layer 2510 is cured while suppressing the thermal effect on the semiconductor chip 23, and the organic insulating layer 251 can be obtained.

[2-5] Wiring layer forming step S24

Next, a wiring layer 253 is formed on the organic insulating layer 251 (see Fig. 5(f)). The wiring layer 253 is formed by obtaining a metal layer by a vapor deposition method such as a sputtering method or a vacuum evaporation method, and then patterning it by a photolithography method and an etching method.

Further, prior to formation of the wiring layer 253, a surface modification treatment such as plasma treatment may be performed.

[2-6] Second resin film arrangement step S25

Next, as shown in FIG. 5(g), the photosensitive resin layer 2520 is obtained in the same manner as in the first resin film arrangement step S20. The photosensitive resin layer 2520 is disposed so as to cover the wiring layer 253.

Thereafter, if necessary, a heat treatment before exposure is performed on the photosensitive resin layer 2520. The processing conditions are, for example, the conditions described in the first resin film arrangement step S20.

[2-7] Second exposure step S26

Next, exposure treatment is performed on the photosensitive resin layer 2520. The processing conditions are, for example, the conditions described in the first exposure step S21.

After that, if necessary, the photosensitive resin layer 2520 is subjected to a heat treatment after exposure. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second developing step S27

Next, the photosensitive resin layer 2520 is subjected to a developing treatment. The processing conditions are, for example, the conditions described in the first developing step S22. Thereby, the opening 424 penetrating through the photosensitive resin layers 2510 and 2520 is formed (refer FIG. 5(h)).

[2-9] 2nd hardening process S28

After the development treatment, the photosensitive resin layer 2520 is subjected to a curing treatment (heat treatment after development). The curing conditions are, for example, the conditions described in the first curing step S23. Thereby, the photosensitive resin layer 2520 is hardened, and the organic insulating layer 252 is obtained (refer FIG. 6(i)).

In addition, in this embodiment, although the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252, it may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be repeatedly added.

[2-10] Through wiring forming process S29

Next, with respect to the opening 424, a through wiring 254 shown in Fig. 6(i) is formed.

A known method is used for forming the through wiring 254, but the following method is used, for example.

First, a seed layer (not shown) is formed on the organic insulating layer 252. The seed layer is formed on the upper surface of the organic insulating layer 252 together with the inner surfaces (side and bottom surfaces) of the opening 424.

As the seed layer, for example, a copper seed layer is used. In addition, the seed layer is formed by, for example, sputtering.

Further, the seed layer may be made of the same type of metal as the through wiring 254 to be formed, or may be made of a different type of metal.

Subsequently, a resist layer (not shown) is formed on a region other than the opening 424 of the seed layer (not shown). Then, metal is filled in the opening 424 using this resist layer as a mask. For this charging, for example, an electrolytic plating method is used. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy. In this way, a conductive material is embedded in the opening 424 to form a through wiring 254.

Subsequently, the resist layer (not shown) is removed. Also, a seed layer (not shown) on the organic insulating layer 252 is removed. For this, for example, a flash etching method can be used.

In addition, the location where the through wiring 254 is formed is not limited to the illustrated position.

[3] Substrate peeling step S3

Next, as shown in Fig. 6(j), the substrate 202 is peeled off. As a result, the lower surface of the insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4

Next, as shown in FIG. 6(k), the lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. As shown in FIG. The lower wiring layer 24 may be formed by any method, for example, may be formed in the same manner as the upper wiring layer forming step S2 described above.

The lower wiring layer 24 formed in this way is electrically connected to the upper wiring layer 25 via the through wiring 221.

[5] Solder bump formation step S5

Next, as shown in FIG. 6L, solder bumps 26 are formed in the lower wiring layer 24. Further, on the upper wiring layer 25 or the lower wiring layer 24, a protective film such as a solder resist layer may be formed as necessary.

In the manner described above, the through electrode substrate 2 is obtained.

In addition, the through electrode substrate 2 shown in Fig. 6(L) can be divided into a plurality of regions. Therefore, for example, by separating the through-electrode substrate 2 along the dashed-dotted line shown in FIG. 6(L), a plurality of through-electrode substrates 2 can be efficiently manufactured. In addition, for the individualization, for example, a diamond cutter or the like can be used.

[6] Lamination process S6

Next, the semiconductor package 3 is disposed on the divided through electrode substrate 2. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

Such a method of manufacturing the semiconductor device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate. Thereby, the manufacturing efficiency of the semiconductor device 1 can be improved, and the cost can be reduced.

<Modified example of semiconductor device>

Next, a modified example of the semiconductor device according to the embodiment will be described.

(1st modification)

First, a first modified example will be described.

7 is a partially enlarged cross-sectional view showing a first modified example of the semiconductor device according to the embodiment.

Hereinafter, a first modified example will be described, but in the following description, differences from the embodiments shown in Figs. 1 and 2 will be mainly described, and descriptions of the same items will be omitted. In addition, about the same configuration as in Figs. 1 and 2, the same reference numerals are used in Fig. 7.

The semiconductor device 1A shown in FIG. 7 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except that the structure of the lower wiring layer is different. That is, the semiconductor device 1A shown in FIG. 7 includes the semiconductor chip 23 on which the land 231 is provided, the lower wiring layer 24A, and the solder bump 26. In addition, the structure of the lower wiring layer 24A is different from the structure of the lower wiring layer 24 shown in Figs.

Specifically, the lower wiring layer 24A shown in FIG. 7 includes an organic insulating layer 240 provided on the lower surface of the semiconductor chip 23 and an organic insulating layer 241 provided below the organic insulating layer 240. I'm doing it. At least one of these organic insulating layers 240 and 241 is formed using a photosensitive resin composition for a bump protective film. Further, the lower surface of the semiconductor chip 23 is covered with organic insulating layers 240 and 241.

In addition, the lower wiring layer 24A shown in FIG. 7 includes a bump adhesion layer 245 electrically connected to both the land 231 and the solder bump 26.

In the manufacture of such a first modified example, by using the photosensitive resin composition for a bump protective film, patterning accuracy is high, and deterioration of the metal contained in the land 231 or the bump adhesion layer 245 can be suppressed. For this reason, a highly reliable semiconductor device 1A is obtained.

(2nd modification)

Next, a second modified example will be described.

8 is a partially enlarged cross-sectional view showing a second modified example of the semiconductor device according to the embodiment.

Hereinafter, a second modified example will be described, but in the following description, differences from the embodiments shown in Figs. 1 and 2 will be mainly described, and descriptions of the same items will be omitted. In addition, for the same configuration as in Figs. 1 and 2, the same reference numerals are used in Fig. 8.

The semiconductor device 1B shown in FIG. 8 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except that the structure of the lower wiring layer is different. That is, the semiconductor device 1B shown in FIG. 8 is provided with the semiconductor chip 23 on which the land 231 is provided, the lower wiring layer 24B, and the solder bump 26. In addition, the structure of the lower wiring layer 24B is different from the structure of the lower wiring layer 24 shown in FIGS. 1 and 2.

Specifically, the lower wiring layer 24B shown in FIG. 8 includes an organic insulating layer 240 provided on the lower surface of the semiconductor chip 23, an organic insulating layer 241 provided under the organic insulating layer 240, An organic insulating layer 242 provided below the organic insulating layer 241 is provided. At least one of these organic insulating layers 240, 241, 242 is formed using a photosensitive resin composition for a bump protective film.

In addition, the lower wiring layer 24B shown in FIG. 8 is a bump adhesion layer electrically connected to both the wiring layer 243 electrically connected to the land 231 and the wiring layer 243 and the solder bump 26. It has (245). The organic insulating layers 240 and 241 are interposed between the semiconductor chip 23 and the wiring layer 243, and the lower surface of the wiring layer 243 is covered with the organic insulating layer 242.

In the manufacture of such a second modified example, by using the photosensitive resin composition for the bump protective film, the patterning accuracy is high, and the deterioration of the metal included in the land 231, the wiring layer 243, and the bump adhesion layer 245 can be suppressed. I can. For this reason, a highly reliable semiconductor device 1B is obtained.

<electronic device>

The electronic device according to the present embodiment includes the semiconductor device according to the present embodiment described above.

The electronic device according to the present embodiment is not particularly limited as long as it includes such a semiconductor device, and for example, communication such as a mobile phone, a smartphone, a tablet terminal, a wearable terminal, an information device such as a PC, a server, and a router. And industrial equipment such as machinery, robots, and machine tools, vehicle control computers, and in-vehicle equipment such as car navigation systems.

As mentioned above, although this invention was demonstrated based on the illustrated embodiment, this invention is not limited to these.

For example, the method for manufacturing a semiconductor device of the present invention may be one in which an arbitrary target step is added to the above embodiment.

Moreover, the photosensitive resin composition, the semiconductor device, and the electronic device of this invention may have added arbitrary elements to the said embodiment.

In addition, the photosensitive resin composition can be applied not only to semiconductor devices, but also to bump protective films for display devices such as MEMS (Micro Electro Mechanical Systems), various sensors, liquid crystal displays, and bump protective films for display devices such as organic EL devices.

In addition, the form of the package of the semiconductor device is not limited to the illustrated form, and may be any form.

Example

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is by no means limited to the description of these Examples.

(Preparation of photosensitive resin composition)

The raw materials of each component blended according to Table 1 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to obtain a mixed solution. Thereafter, the mixed solution was filtered through a 0.2 μm polypropylene filter to obtain a varnish-like photosensitive resin composition having a viscosity of about 100 cP at 25°C.

The viscosity of the photosensitive resin composition was measured by setting a rotation speed of 100 rpm using a cone plate viscometer (TV-25, manufactured by Toki Sangyo).

The details of the raw materials of each component in Table 1 are as follows.

(Epoxy resin)

Epoxy resin 1: Multifunctional epoxy resin represented by the following structure (Nippon Kayaku Co., Ltd. EPPN201, phenol novolak type epoxy resin, solid at 25°C, n=about 5)

(Phenoxy resin)

Phenoxy resin 1: Bisphenol A-type phenoxy resin (jER1256 manufactured by Mitsubishi Chemical Corporation, Mw: about 50,000)

Phenoxy resin 2: Bisphenol A/F type phenoxy resin (YP-70, manufactured by Shinnittetsu Sumitomo Chemical Co., Ltd., MW: about 50,000 to 60,000)

(Phenolic resin)

Phenolic resin 1: Novolak-type phenolic resin with the following structure (PR-51470, manufactured by Sumitomo Bakelite)

(Mine generator)

Mine generator 1: Triarylsulfonium borate salt (manufactured by Acid Apro, CPI-310B)

(Surfactants)

Surfactant 1: Oligomer containing fluorine-containing and lipophilic group (R-41, manufactured by DIC)

(Silane coupling agent)

Silane coupling agent 1: 3-glycidoxypropyltrimethoxysilane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.)

[Table 1]

About the obtained photosensitive resin composition, it evaluated based on the following evaluation items.

<Evaluation of patterning property>

The obtained photosensitive resin composition was applied onto an 8-inch silicon wafer using a spin coater. After coating, it was prebaked in air at 120° C. for 3 minutes on a hot plate to obtain a coating film having a thickness of about 9.0 μm.

The i-line was irradiated to this coating film through a mask manufactured by Toppan Instsu Corporation (a negative pattern and a positive pattern having a width of 1.0 to 100 μm are drawn).

For irradiation, an i-line stepper (NSR-4425i manufactured by Nikon) was used, the focus value was the best focus, and the exposure amount was 10 μm in the direction of the film thickness of the Via pattern at the center (in the case of a 9 μm film thickness, the film thickness was 4.5 μm high). The exposure dose at which the opening width of was 10 μm±0.2 μm was investigated.

After exposure, the wafer was placed on a hot plate, and a baking treatment was performed at 70° C. for 5 minutes in the air.

Thereafter, using PGMEA as a developer, spray development was performed for 30 seconds to dissolve and remove the unexposed part.

Thereafter, a cross section of a Via pattern having a width of 100 μm on the obtained coating film sample was observed using a table-top SEM, the angle (°) of the taper angle was measured, and the pattern shape was evaluated. The angle formed by the bottom surface of the coating film and the side surface in the opening of the coating film was taken as a taper angle. Table 1 shows the evaluation results.

Criteria for evaluating patterning properties:

×: The angle of the taper angle is less than 85°

○: The angle of the taper angle is 85 to 90°

×: The angle of the taper angle exceeds 90°

<Evaluation of heat resistance reliability>

(Preparation of test piece for evaluation)

・Production of cured film

(1) The obtained photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness was 10 μm after drying, and dried in air at 120° C. for 3 minutes to form a photosensitive resin film.

(2) The photosensitive resin film obtained in the above (1) was exposed to the entire surface at ^{800 mJ/cm 2 using a manual exposure machine (manufactured by Oak Seisakusho, HMW-201GX).} Subsequently, the substrate was heated after exposure at 70° C. for 5 minutes in air using a hot plate.

(3) After the above (2), PGMEA was used as a developer, spray development was performed under the conditions of 3000 rpm for 15 seconds, and then, the developer was removed from the surface of the photosensitive resin film under the conditions of 3000 rpm for 15 seconds.

(4) After the above (3), the photosensitive resin film was cured by heat treatment at 170° C. for 180 minutes in a nitrogen atmosphere to obtain a cured film.

(5) The cycle of holding the silicon wafer with the cured film of the above (4) at -65°C for 30 minutes/150°C for 30 minutes using a cold and thermal shock device (manufactured by SPEC Co., Ltd., TSA-72EH-W) is 1 It was set as a cycle, and the TCT (Thermal Cycle Test) of processing 200 cycles was performed (TCT processing).

(6) After the above (4), it was immersed in 2% hydrofluoric acid, the film-shaped cured film was peeled from the silicon wafer, and the cured film was dried overnight to obtain a cured film A. On the other hand, after said (5), it immersed in 2% hydrofluoric acid, the film-shaped cured film was peeled from the silicon wafer, and the cured film was dried overnight, and the cured film C was obtained.

(7) 100 mg of each of the cured film A and the cured film C obtained in the above (6) was used, and exposed for 12 hours in an 85°C 85% environment (exposure treatment) to obtain a cured film B and a cured film D.

The cured films A and B obtained in the above <Preparation of the cured film> were compared, or the cured films C and D were compared, and the water absorption after curing and the water absorption (%) after TCT were calculated from the weight change before and after exposure treatment.

In Table 1, "water absorption rate after curing" and "water absorption rate after TCT" were calculated based on the following formula.

(Water absorption rate after curing)

"Water absorption after curing" (%) = (B-A)/A × 100

A: The weight of the cured film A obtained in (6) without the TCT treatment of the cured film obtained in the above (4)

B: The cured film A is exposed, and the weight of the cured film B obtained in the above (7)

(Absorption rate after TCT)

"Absorption rate after TCT" (%) = (D-C)/C×100

C: TCT treatment of the cured film obtained in (4) above, and the weight of the cured film C obtained in (6)

D: The weight of the cured film D obtained by exposure treatment of the cured film C and the above (7)

Next, the measured "absorption rate after curing" and "absorption rate after TCT" were evaluated with reference to the following evaluation criteria. Table 1 shows the evaluation results.

Evaluation criteria for heat resistance reliability:

○: The difference between the water absorption after curing and the water absorption after TCT is 1% or less

X: The difference between the water absorption after curing and the water absorption after TCT exceeds 1%

It was found that the photosensitive resin compositions of Examples 1 and 2 were excellent in heat resistance reliability compared to Comparative Example 1, and that the patterning property (pattern shape) was good compared to Comparative Example 2. The photosensitive resin composition of Examples 1 and 2 is suitable as a negative photosensitive resin composition used for an insulating film of a wiring layer or the like.

This application claims priority based on Japanese Patent Application No. 2018-159354 for which it applied on August 28, 2018, and uses all of the indication here.

Claims (10)

As a negative photosensitive resin composition for film formation,
With epoxy resin,
With phenoxy resin,
A negative photosensitive resin composition containing a photoacid generator. The method according to claim 1,
The negative photosensitive resin composition, wherein the weight average molecular weight of the phenoxy resin is 10000 or more and 100000 or less. The method according to claim 1 or 2,
The negative photosensitive resin composition, wherein the content of the phenoxy resin is 10 parts by mass or more and 60 parts by mass or less based on 100% by mass of the epoxy resin content. The method according to any one of claims 1 to 3,
The negative photosensitive resin composition in which the viscosity at 25°C of the negative photosensitive resin composition is 10 cP or more and 6000 cP or less. The method according to any one of claims 1 to 4,
The epoxy resin, a negative photosensitive resin composition containing a polyfunctional epoxy resin having three or more epoxy groups in the molecule. The method according to any one of claims 1 to 5,
A negative photosensitive resin composition containing a surfactant. The method according to any one of claims 1 to 6,
A negative photosensitive resin composition containing an adhesion aid. The method according to any one of claims 1 to 7,
A negative photosensitive resin composition containing a solvent. The method according to any one of claims 1 to 8
A negative photosensitive resin composition, wherein the cured film of the negative photosensitive resin composition is used to constitute an insulating layer of a redistribution layer. A semiconductor chip,
It has a redistribution layer provided on the surface of the semiconductor chip,
A semiconductor device in which the insulating layer in the redistribution layer is formed of a cured product of the negative photosensitive resin composition according to any one of claims 1 to 9.

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