JP7093406B2 - Semiconductor equipment - Google Patents

Description

The present invention relates to a negative photosensitive resin composition and a semiconductor device using the same.

So far, various developments have been made in photosensitive resin compositions. As this kind of technique, for example, the technique described in Patent Document 1 is known. Patent Document 1 describes a photosensitive resin composition containing an epoxy resin, a phenol resin, and a photopolymerization initiator (Table 1 of Patent Document 1).

WO2014 / 010204A

However, as a result of the study by the present inventor, it has been found that the photosensitive resin composition described in Patent Document 1 has room for improvement in terms of heat resistance reliability and patterning property.

As a result of further studies, the present inventor has found that when the epoxy resin and the phenol resin are used in combination in the negative photosensitive resin composition, the pattern shape is good, but the water absorption rate is increased. Further, when the epoxy resin is used alone without using the phenol resin in combination, the increase in the water absorption rate can be suppressed, but on the contrary, the pattern shape may be defective.

Based on such a trade-off relationship between heat resistance and patterning property, we conducted intensive research on an appropriate resin combination, and found that by using an epoxy resin and a phenoxy resin in combination, an increase in water absorption rate was suppressed. We have found that the pattern shape is good, and have completed the present invention.

According to the present invention
With semiconductor chips
It is provided with a rewiring layer provided on the surface of the semiconductor chip.
A semiconductor device in which the insulating layer in the rewiring layer is composed of a cured product of a negative photosensitive resin composition (excluding a photosensitive resin varnish containing an epoxy resin component that is liquid at room temperature) .
The negative photosensitive resin composition contains an epoxy resin, a phenoxy resin, and a photoacid generator, and does not contain a phenol resin.
The epoxy resin contains a polyfunctional epoxy resin having three or more epoxy groups in the molecule.
The phenoxy resin contains one or more selected from bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, and copolymer phenoxy resin of bisphenol A type and bisphenol F type.
The weight average molecular weight of the phenoxy resin is 10,000 or more and 100,000 or less.
The content of the phenoxy resin is 10 parts by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the epoxy resin.
The negative photosensitive resin composition has a semiconductor device having a <water absorption rate X after curing> of 1.5 to 2.0% when the film is made into a cured film according to the following <preparation of a cured film>. Provided.
<Preparation of cured film>
(1) The negative photosensitive resin composition is applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness becomes 10 μm, and dried in the air at 120 ° C. for 3 minutes to be photosensitive. Form a resin film.
(2) The photosensitive resin film obtained in (1) is exposed to the entire surface at 800 mJ / cm ² using a manual exposure machine. Subsequently, the exposed photosensitive resin film is heated in the air at 70 ° C. for 5 minutes after exposure using a hot plate.
(3) After (2), propylene glycol monomethyl ether acetate is used as a developing solution, and spray development is performed under the conditions of 3000 rpm for 15 seconds, and then the developing solution is applied to the surface of the photosensitive resin film under the conditions of 3000 rpm for 15 seconds. Remove from.
(4) After (3), the photosensitive resin film is cured by heat treatment at 170 ° C. for 180 minutes in a nitrogen atmosphere to obtain a cured film.
(5) After (4), the film-like cured film is peeled off from the silicon wafer by immersing in 2% hydrofluoric acid, and the cured film is dried overnight to obtain a cured film A.
(6) Using 100 mg of the cured film A obtained in (5), exposure is performed in an environment of 85 ° C. and 85% for 12 hours (exposure treatment) to obtain a cured film B.
<Water absorption rate X after curing>
The cured films A and B obtained in <Preparation of the cured film> are compared, and the water absorption rate X (%) after curing is calculated from the weight change before and after the exposure treatment based on the following formula.
"Water absorption rate X after curing" (%) = (BA) / A × 100
A: Weight of the cured film A obtained in (5) B: Weight of the cured film B obtained in (6)

According to the present invention, there is provided a negative photosensitive resin composition having excellent heat resistance and patterning properties, and a semiconductor device using the negative photosensitive resin composition.

The above-mentioned objectives and other objectives, features and advantages are further clarified by the preferred embodiments described below and the accompanying drawings below.

It is a vertical sectional view which shows an example of the structure of the semiconductor device of this embodiment. FIG. 2 is a partially enlarged view of the region surrounded by the chain line of FIG. It is a process drawing which shows the method of manufacturing the semiconductor device shown in FIG. It is a figure for demonstrating the method of manufacturing the semiconductor device shown in FIG. It is a figure for demonstrating the method of manufacturing the semiconductor device shown in FIG. It is a figure for demonstrating the method of manufacturing the semiconductor device shown in FIG. It is a partially enlarged sectional view which shows the 1st modification of the semiconductor device which concerns on embodiment. It is a partially enlarged sectional view which shows the 2nd modification of the semiconductor device which concerns on embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, similar components are designated by the same reference numerals, and the description thereof will be omitted as appropriate. Further, the figure is a schematic view and does not match the actual dimensional ratio.

The outline of the photosensitive resin composition of this embodiment is shown.
The photosensitive resin composition of the present embodiment is a negative photosensitive resin composition for film formation, which comprises an epoxy resin, a phenoxy resin, and a photoacid generator.

As a result of the study by the present inventor, the following findings were found.
In the negative photosensitive resin composition, from the viewpoint of enhancing the patterning property, when the "epoxy resin" and the "phenol resin" that promotes the polymerization reaction of the epoxy resin are used in combination, a good pattern shape can be realized, but the water absorption rate is high. It was found that the heat resistance increased and the heat resistance decreased.
Although the detailed mechanism is not clear, the cross-linking reaction between the epoxy resins proceeds during exposure, and as a result of the consumption of most of the epoxy resin before curing, the reaction between the epoxy resin and the phenol resin does not proceed so much during curing, and it is phenolic. It is considered that the fact that the phenol resin having a hydroxy group remains without reacting is a factor for increasing the water absorption rate.

On the other hand, when the "epoxy resin" alone is used without using the phenol resin in combination, the increase in the water absorption rate can be suppressed, but on the contrary, the patterning property is lowered.

Therefore, based on the trade-off relationship between patterning property and heat resistance reliability, we diligently studied the components to be used in combination with the epoxy resin. As a result, it was found that the patterning property and the heat resistance reliability can be improved by using the "epoxy resin" and the "phenoxy resin" in combination.

The detailed mechanism is not clear, but the following can be considered.
In the epoxy resin alone system, the reaction speed at the time of PEB is fast, the reaction proceeds wider than the exposure range, and it tends to be narrower than the target opening diameter. In particular, since the reaction proceeds faster in the upper part of the membrane where the activation of PAG is likely to proceed, the opening shape tends to be reverse-tapered. On the other hand, it is considered that by using the phenoxy resin in combination with the epoxy resin, such an excessive reaction can be suppressed, so that a good pattern shape can be obtained and the patterning property can be improved. Then, the increase in the water absorption rate can be suppressed as compared with the case where the phenol resin is used in combination.

According to the photosensitive resin composition of the present embodiment, heat resistance and patterning property can be enhanced, so that a semiconductor device having excellent connection reliability and an electronic device using the same can be realized.

Further, it is expected that the photosensitive resin composition of the present embodiment is suitably used for forming an insulating layer of a rewiring layer formed on a semiconductor chip or the like.

The resin film of the photosensitive resin composition of the present embodiment is used as, for example, a permanent film, a protective film, an insulating film, a rewiring material, or the like in an electric / electronic device (electronic device). This resin film contains a cured film that has been cured by heating.

Here, "electrical / electronic equipment" refers to electronic devices such as semiconductor chips, semiconductor elements, printed wiring boards, electric circuits, display devices such as television receivers and monitors, information and communication terminals, light emitting diodes, physical batteries, and chemical batteries. It refers to elements, devices, final products, and other electrical equipment in general that apply engineering technology.

Among these, the photosensitive resin composition of the present embodiment can be suitably used for, for example, a photosensitive resin composition for a bump protective film. The resin film provided around the electrical connection elements such as bumps, lands, and wiring is collectively called "bump protective film". The photosensitive resin composition for a bump protective film refers to a resin composition used for forming a bump protective film.

Specific examples of the bump protective film include a passivation film, an overcoat film, and an interlayer insulating film provided around the electrical connection element. Further, although the resin film is provided on the semiconductor chip, it may be provided close to the semiconductor chip, and may be provided at a position away from the semiconductor chip such as a rewiring layer or a build-up wiring layer. It may be provided.

Next, the details of the photosensitive resin composition of this embodiment will be described.
(Epoxy resin)
The photosensitive resin composition of the present embodiment contains an epoxy resin. This makes it possible to improve the physical characteristics and processability of the photosensitive resin composition in the resin film.

As the epoxy resin, for example, an epoxy resin having two or more epoxy groups in one molecule can be used. As the epoxy resin, monomers, oligomers, and polymers in general can be used, and the molecular weight and molecular structure thereof are not particularly limited.
Examples of the epoxy resin include phenol novolac type epoxy resin, cresol novolac type epoxy resin, cresol naphthol type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene skeleton type epoxy resin, bisphenol A type epoxy resin, and bisphenol. A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F diglycidyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, glycidyl ether type epoxy resin, cresol novolac type epoxy resin, aromatic polyfunctional epoxy resin , An aliphatic epoxy resin, an aliphatic polyfunctional epoxy resin, an alicyclic epoxy resin, a polyfunctional alicyclic epoxy resin and the like. The epoxy resin may be used alone or in combination of two or more.

The epoxy resin can include a solid epoxy resin having two or more epoxy groups in the molecule. As the solid epoxy resin, a resin having two or more epoxy groups and solid at 25 ° C. (room temperature) can be used. This makes it possible to enhance the mechanical properties of the photosensitive resin composition in the resin film.

Further, the epoxy resin can include a polyfunctional epoxy resin having three or more functionalities in the molecule (that is, a polyfunctional epoxy resin having three or more epoxy groups in one molecule).

Examples of the trifunctional or higher functional epoxy resin include phenol novolac type epoxy resin, cresol novolac type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol A type epoxy resin, and tetramethylbisphenol F. It is preferable to contain one or more kinds of epoxy resins selected from the group consisting of type epoxy resins, and it is more preferable to contain novolak type epoxy resins. As a result, an appropriate coefficient of thermal expansion can be realized while increasing the heat resistance of the resin film.

Further, the epoxy resin can include a liquid epoxy resin having two or more epoxy groups in the molecule. The liquid epoxy resin functions as a filming agent and can improve the brittleness of the resin film of the photosensitive resin composition.

As the liquid epoxy resin, an epoxy compound having two or more epoxy groups and liquid at room temperature of 25 ° C. can be used. The viscosity of this liquid epoxy resin at 25 ° C. is, for example, 1 mPa · s to 8000 mPa · s, preferably 5 mPa · s to 1500 mPa · s, and more preferably 10 mPa · s to 1400 mPa · s. ..

The liquid epoxy resin may include, for example, one or more selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyl diglycidyl ether and alicyclic epoxy. These may be used alone or in combination of two or more. Among these, alkyl diglycidyl ether can be used from the viewpoint of reducing cracks after development.

The epoxy equivalent of the liquid epoxy resin is, for example, 100 g / eq or more and 200 g / eq or less, preferably 105 g / eq or more and 180 g / eq or less, and more preferably 110 g / eq or more and 170 g / eq or less. This makes it possible to improve the brittleness of the resin film.

The lower limit of the content of the liquid epoxy resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more in the entire non-volatile component of the photosensitive resin composition. .. This makes it possible to improve the brittleness of the finally obtained cured film. On the other hand, the upper limit of the content of the liquid epoxy resin is, for example, 40% by mass or less, preferably 35% by mass or less, and more preferably 30% by mass or less in the total non-volatile components of the photosensitive resin composition. be. This makes it possible to balance the film characteristics of the cured film.

The lower limit of the content of the epoxy resin is, for example, 40% by mass or more, preferably 45% by mass or more, and more preferably 50% by mass or more in the entire non-volatile component of the photosensitive resin composition. This makes it possible to improve the heat resistance and mechanical strength of the finally obtained cured film. On the other hand, the upper limit of the content of the epoxy resin is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 82% by mass or less in the entire non-volatile component of the photosensitive resin composition. .. Thereby, the patterning property can be improved.

In the present embodiment, the non-volatile component of the photosensitive resin composition refers to the balance excluding the volatile components such as water and solvent. The content of the photosensitive resin composition with respect to the entire non-volatile component refers to the content of the photosensitive resin composition with respect to the entire non-volatile component excluding the solvent when the solvent is contained.

The weight average molecular weight (Mw) of the epoxy resin is not particularly limited, but is preferably, for example, 300 to 9000, and more preferably 500 to 8000. By using an epoxy resin having a relatively low molecular weight, the reactivity at the time of exposure can be enhanced.

The photosensitive resin composition of the present embodiment may contain a thermosetting resin other than the above epoxy resin. Examples of other thermosetting resins include resins having a triazine ring such as urea resin and melamine resin; unsaturated polyester resin; maleimide resin such as bismaleimide compound; polyurethane resin; diallyl phthalate resin; silicone resin. Benzoxazine resin; Polyimide resin; Polyamideimide resin; Benzocyclobutene resin, Novolak type cyanate resin, Bisphenol A type cyanate resin, Bisphenol E type cyanate resin, Tetramethylbisphenol F type cyanate resin and other cyanate resins And so on. These may be used alone or in combination of two or more.

(Phenoxy resin)
The photosensitive resin composition of the present embodiment contains a phenoxy resin. This makes it possible to increase the flexibility of the resin film of the photosensitive resin composition.

The weight average molecular weight (Mw) of the phenoxy resin is not particularly limited, but is preferably 10,000 to 100,000, more preferably 20,000 to 80,000, for example. By using such a relatively high molecular weight phenoxy resin, it is possible to impart good flexibility to the resin film and impart sufficient solubility in a solvent.

In this embodiment, the weight average molecular weight is measured, for example, as a polystyrene-equivalent value in a gel permeation chromatography (GPC) method.

Further, the phenoxy resin may have a reactive group such as an epoxy group at both ends of the molecular chain or inside the molecular chain. The reactive group in the phenoxy resin is capable of cross-linking with the epoxy group in the epoxy resin. By using such a phenoxy resin, the solvent resistance and heat resistance in the resin film can be enhanced.

Further, as the phenoxy resin, one which is solid at 25 ° C. is preferably used. Specifically, a phenoxy resin having a non-volatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

Examples of the phenoxy resin include bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, bisphenol A type and bisphenol F type copolymerized phenoxy resin, biphenyl type phenoxy resin, bisphenol S type phenoxy resin, and biphenyl type phenoxy resin. Examples thereof include a phenoxy resin copolymerized with a bisphenol S-type phenoxy resin, and one or a mixture of two or more of these is used. Among these, a bisphenol A type phenoxy resin or a copolymerized phenoxy resin of a bisphenol A type and a bisphenol F type is preferably used.

The lower limit of the content of the phenoxy resin is, for example, 10 parts by mass or more, preferably 13 parts by mass or more, and more preferably 15 parts by mass or more with respect to 100 parts by mass of the epoxy resin. This makes it possible to improve the patterning property. In addition, flexibility can be increased. On the other hand, the upper limit of the content of the phenoxy resin is, for example, 60 parts by mass or less, preferably 50 parts by mass or less, and more preferably 40 parts by mass or less with respect to 100 parts by mass of the epoxy resin. As a result, it is possible to suppress an increase in hygroscopicity and improve heat resistance and reliability. In addition, it is possible to increase the solubility of the phenoxy resin and realize a photosensitive resin composition having excellent coatability. The reference epoxy resin may be a trifunctional or higher functional epoxy resin.

The photosensitive resin composition of the present embodiment may contain a thermoplastic resin other than the phenoxy resin. Examples of the thermoplastic resin include polyvinyl acetal resin, acrylic resin, polyamide resin (for example, nylon), thermoplastic urethane resin, polyolefin resin (for example, polyethylene, polypropylene, etc.), polycarbonate, polyester resin (for example, polyethylene terephthalate). , Polybutylene terephthalate, etc.), Polyacetal, Polyphenylene sulfide, Polyether ether ketone, Liquid crystal polymer, Fluorine resin (eg, Polytetrafluoroethylene, Polyfluorinated vinylidene, etc.), Modified polyphenylene ether, Polysulfone, Polyether sulfone, Polyallylate, Polyamide Examples thereof include imide, polyetherimide, and thermoplastic polyimide. These may be used alone or in combination of two or more.

(Photoacid generator)
The photosensitive resin composition of the present embodiment contains a photoacid generator. This makes it possible to improve workability during patterning such as sensitivity and resolution.
The photosensitive resin composition of the present embodiment is a chemically amplified photosensitive resin composition using an acid generated from a photoacid generator as a catalyst, and can be used as a negative photosensitive resin composition.

Examples of the photosensitive agent include onium salt compounds. More specifically, iodonium salts such as diazonium salt and diaryliodonium salt, sulfonium salts such as triarylsulfonium salt, triarylvirylium salt, benzylpyridinium thiocyanate, dialkylphenacilsulfonium salt, dialkylhydroxyphenylphosphonium salt and the like. Examples thereof include a cationic photopolymerization initiator. Among these, a triarylsulfonium salt can be used from the viewpoint of patterning property.

As the counter anion of the onium salt compound, a borate anion, a sulfonate anion, a gallate anion, a phosphorus anion, an antimony anion and the like are used.

The content of the photoacid generator is, for example, 0.3% by mass to 5.0% by mass, preferably 0.5% by mass to 4.5% by mass, based on the total solid content of the photosensitive resin composition. More preferably, it is 1.0% by mass to 4.0% by mass. By setting it to the above lower limit value or more, the patterning property can be improved. On the other hand, by setting the value to the lower limit or less, the insulation reliability can be improved.
In the present specification, "to" means that an upper limit value and a lower limit value are included unless otherwise specified.

The photosensitive resin composition of the present embodiment may contain a photosensitive agent other than the above-mentioned photoacid generator.

(Surfactant)
The photosensitive resin composition of the present embodiment may contain a surfactant. By containing a surfactant, the wettability at the time of coating can be improved, and a uniform resin film and a cured film can be obtained. Examples of the surfactant include a fluorine-based surfactant, a silicone-based surfactant, an alkyl-based surfactant, an acrylic-based surfactant, and the like.

The surfactant preferably contains a surfactant containing at least one of a fluorine atom and a silicon atom. As a result, a uniform resin film can be obtained (improvement of coatability), and in addition to improvement of developability, it also contributes to improvement of adhesive strength. As such a surfactant, for example, a nonionic surfactant containing at least one of a fluorine atom and a silicon atom is preferable. Examples of commercially available products that can be used as surfactants include F-251, F-253, F-281, F-430, F-477, and F-551 of the "Mega Fuck" series manufactured by DIC Co., Ltd. F-552, F-555, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F- 565, F-568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94, etc. Fluorine-containing oligomer-structured surfactants, Fluorine-containing nonionic surfactants such as Neos Co., Ltd.'s Futergent 250 and Futergent 251's SILFOAM® series (eg SD 100 TS) manufactured by Wacker Chemie. , SD 670, SD 850, SD 860, SD 882) and the like.

The content of the surfactant can be, for example, 0.001 to 1% by mass, preferably 0.005 to 0.5% by mass, based on the total amount of the non-volatile components of the photosensitive resin composition.

(Adhesion aid)
The photosensitive resin composition of the present embodiment may contain an adhesion aid. This makes it possible to further improve the adhesion with the inorganic material.

The adhesion aid is not particularly limited, and for example, a silane coupling agent such as aminosilane, epoxysilane, acrylicsilane, mercaptosilane, vinylsilane, ureidosilane, or sulfidesilane can be used. One type of silane coupling agent may be used alone, or two or more types may be used in combination. Among these, it is more preferable to use epoxysilane (that is, a compound containing both an epoxy moiety and a group that generates a silanol group by hydrolysis in one molecule).

Examples of the amino group-containing coupling agent include bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, and γ-aminopropylmethyldiethoxysilane. , Γ-Aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropyl Examples thereof include methyldimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane and the like.
Examples of the epoxy group-containing coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, and γ-glycidylpropyl. Examples thereof include trimethoxysilane.
Examples of the acrylic group-containing coupling agent or the methacryl group-containing coupling agent include γ- (methacryloxypropyl) trimethoxysilane, γ- (methacryloxypropyl) methyldimethoxysilane, and γ- (methacryloxypropyl) methyldiethoxysilane. And so on.
Examples of the mercapto group-containing coupling agent include 3-mercaptopropyltrimethoxysilane.
Examples of the vinyl group-containing coupling agent include vinyltris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.
Examples of the ureido group-containing coupling agent include 3-ureidopropyltriethoxysilane and the like.
Examples of the sulfide group-containing coupling agent include bis (3- (triethoxysilyl) propyl) disulfide and bis (3- (triethoxysilyl) propyl) tetrasulfide.
Examples of the acid anhydride-containing coupling agent include 3-trimethoxysilylpropyl succinic acid anhydride, 3-triethoxycysilylpropyl succinic acid anhydride, 3-dimethylmethoxysilylpropyl succinic acid anhydride and the like.

Although the silane coupling agent is listed here, it may be a titanium coupling agent, a zirconium coupling agent, or the like.

The content of the adhesion aid is preferably, for example, preferably 0.3 to 5% by mass, more preferably 0.4 to 4%, based on the total amount of the non-volatile components of the photosensitive resin composition. It can be preferably 0.5 to 3% by mass.

(Additive)
In addition to the above-mentioned components, other additives may be added to the photosensitive resin composition of the present embodiment, if necessary. Examples of other additives include antioxidants, fillers such as silica, sensitizers, filming agents and the like.

(solvent)
The photosensitive resin composition of the present embodiment may contain a solvent. The solvent may include an organic solvent. The organic solvent can be used without particular limitation as long as it can dissolve each component of the photosensitive resin composition and does not chemically react with each component.

Examples of the organic solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, and benzyl. Examples thereof include alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, diproprene glycol methyl-n-propyl ether, butyl acetate and γ-butyrolactone. These may be used alone or in combination of two or more.

The solvent is preferably used so that the concentration of the total amount of the non-volatile components in the photosensitive resin composition is, for example, 30 to 75% by mass. Within this range, each component can be sufficiently dissolved, and good coatability can be ensured. Further, by adjusting the content of the non-volatile component, the viscosity of the photosensitive resin composition can be appropriately controlled.

The viscosity of the varnish-like photosensitive resin composition at 25 ° C. is, for example, 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. By setting the viscosity within the above numerical range, the thickness of the coating film can be appropriately controlled. For example, a thickness of 1 μm to 100 μm, preferably 3 μm to 80 μm, and more preferably 5 μm to 50 μm can be realized.

Next, the semiconductor device and the electronic device of this embodiment will be described.

FIG. 1 is a vertical sectional view showing an example of the semiconductor device of the present embodiment. Further, FIG. 2 is a partially enlarged view of the region surrounded by the chain line of FIG. In the following description, the upper side in FIG. 1 is referred to as "upper" and the lower side is referred to as "lower".

The semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted on the through electrode substrate 2.

The through silicon via substrate 2 is provided on the insulating layer 21, a plurality of through wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21, the semiconductor chip 23 embedded inside the insulating layer 21, and the lower surface of the insulating layer 21. The lower layer wiring layer 24, the upper layer wiring layer 25 provided on the upper surface of the insulating layer 21, and the solder bumps 26 provided on the lower surface of the lower layer wiring layer 24 are provided.

The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, a bonding wire 33 for electrically connecting the semiconductor chip 32 and the package substrate 31, and a semiconductor chip 32 and a bonding wire 33. It includes an embedded sealing layer 34 and solder bumps 35 provided on the lower surface of the package substrate 31.

Then, the semiconductor package 3 is laminated on the through electrode substrate 2. As a result, the solder bump 35 of the semiconductor package 3 and the upper wiring layer 25 of the through silicon via substrate 2 are electrically connected.

In such a semiconductor device 1, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, it is possible to easily reduce the height. Therefore, it is possible to contribute to the miniaturization of the electronic device incorporating the semiconductor device 1.

Further, since the through electrode substrate 2 having different semiconductor chips and the semiconductor package 3 are laminated, the mounting density per unit area can be increased. Therefore, it is possible to achieve both miniaturization and high performance.

Hereinafter, the through silicon via substrate 2 and the semiconductor package 3 will be described in more detail.
The lower layer wiring layer 24 and the upper layer wiring layer 25 included in the through silicon via substrate 2 shown in FIG. 2 include an insulating layer, a wiring layer, a through wiring, and the like, respectively. As a result, the lower layer wiring layer 24 and the upper layer wiring layer 25 include wiring inside or on the surface, and are electrically connected to each other via the through wiring 221 penetrating the insulating layer 21.

The wiring layer included in the lower wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26. Therefore, the lower wiring layer 24 functions as a rewiring layer of the semiconductor chip 23, and the solder bump 26 functions as an external terminal of the semiconductor chip 23.

As described above, the through wiring 221 shown in FIG. 2 is provided so as to penetrate the insulating layer 21. As a result, the lower layer wiring layer 24 and the upper layer wiring layer 25 are electrically connected to each other, and the through electrode substrate 2 and the semiconductor package 3 can be laminated. Therefore, it is possible to improve the functionality of the semiconductor device 1. can.

The wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 and the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a rewiring layer of the semiconductor chip 23, and serves as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works. The cured film of the photosensitive resin composition of the present embodiment can be used to form the insulating layer of the rewiring layer.

According to the present embodiment, the semiconductor chip 23 and the rewiring layer (upper layer wiring layer 25) provided on the surface of the semiconductor chip 23 are provided, and the insulating layer in the rewiring layer is the present embodiment. It is possible to realize a semiconductor device composed of a cured product of the photosensitive resin composition in the form.

Since the through wiring 221 penetrates the insulating layer 21, the effect of reinforcing the insulating layer 21 can be obtained. Therefore, even when the mechanical strength of the lower layer wiring layer 24 and the upper layer wiring layer 25 is low, it is possible to avoid a decrease in the mechanical strength of the entire through electrode substrate 2. As a result, the lower layer wiring layer 24 and the upper layer wiring layer 25 can be further reduced in thickness, and the semiconductor device 1 can be further reduced in height.

Further, the semiconductor device 1 shown in FIG. 1 includes a through wiring 222 provided so as to penetrate the insulating layer 21 located on the upper surface of the semiconductor chip 23, in addition to the through wiring 221. As a result, the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be electrically connected to each other.

The insulating layer 21 is provided so as to cover the semiconductor chip 23. This enhances the effect of protecting the semiconductor chip 23. As a result, the reliability of the semiconductor device 1 can be improved. Further, a semiconductor device 1 that can be easily applied to a mounting method such as the package-on-package structure according to the present embodiment can be obtained.

The diameter W (see FIG. 2) of the through wiring 221 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. As a result, the conductivity of the through wiring 221 can be ensured without impairing the mechanical properties of the insulating layer 21.

The semiconductor package 3 shown in FIG. 1 may be a package of any form. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-LeadNed Page) Examples include LF-BGA (Lead Flame BGA) and the like.

The arrangement of the semiconductor chips 32 is not particularly limited, but as an example, in FIG. 1, a plurality of semiconductor chips 32 are laminated. As a result, the mounting density is increased. The plurality of semiconductor chips 32 may be arranged in the plane direction, or may be arranged in the plane direction while being laminated in the thickness direction.

The package substrate 31 may be any substrate, but is, for example, a substrate including an insulating layer, a wiring layer, a through wiring, and the like (not shown). Of these, the solder bump 35 and the bonding wire 33 can be electrically connected via the through wiring.

The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wire 33 can be protected from external forces and the external environment.

Since the semiconductor chip 23 included in the through silicon via substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are arranged close to each other, the advantages such as high speed and low loss of mutual communication can be enjoyed. Can be done. From this point of view, for example, of the semiconductor chip 23 and the semiconductor chip 32, one is used as an arithmetic element such as a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), or an AP (Application Processor), and the other is a DRAM (Dynamic Random Access). If a storage element such as a Memory) or a flash memory is used, these elements can be arranged close to each other in the same device. As a result, it is possible to realize a semiconductor device 1 that has both high functionality and miniaturization.

<Manufacturing method of semiconductor devices>
Next, a method for manufacturing the semiconductor device 1 shown in FIG. 1 will be described.

FIG. 3 is a process diagram showing a method of manufacturing the semiconductor device 1 shown in FIG. 4 to 6 are diagrams for explaining a method for manufacturing the semiconductor device 1 shown in FIG. 1, respectively.

The method for manufacturing the semiconductor device 1 includes a chip arranging step S1 for obtaining an insulating layer 21 so as to embed a semiconductor chip 23 and through wirings 221 and 222 provided on the substrate 202, and an upper layer on the insulating layer 21 and the semiconductor chip 23. An upper wiring layer forming step S2 for forming the wiring layer 25, a substrate peeling step S3 for peeling the substrate 202, a lower wiring layer forming step S4 for forming the lower wiring layer 24, and a solder bump 26 are formed to form a through electrode substrate. It has a solder bump forming step S5 for obtaining 2 and a laminating step S6 for laminating the semiconductor package 3 on the through electrode substrate 2.

Among these, in the upper wiring layer forming step S2, the photosensitive resin varnish 5 (a varnish-like photosensitive resin composition) is arranged on the insulating layer 21 and the semiconductor chip 23 to obtain the photosensitive resin layer 2510. The film arranging step S20, the first exposure step S21 for exposing the photosensitive resin layer 2510, the first developing step S22 for developing the photosensitive resin layer 2510, and the photosensitive resin layer 2510 for curing. The first curing step S23, the wiring layer forming step S24 for forming the wiring layer 253, and the second resin for arranging the photosensitive resin varnish 5 on the photosensitive resin layer 2510 and the wiring layer 253 to obtain the photosensitive resin layer 2520. The film arranging step S25, the second exposure step S26 for exposing the photosensitive resin layer 2520, the second developing step S27 for developing the photosensitive resin layer 2520, and the curing treatment for the photosensitive resin layer 2520. A second curing step S28 and a through wiring forming step S29 for forming the through wiring 254 in the opening 424 (through hole) are included.

Hereinafter, each step will be described in sequence. The following manufacturing method is an example, and is not limited to this.

[1] Chip placement step S1
First, as shown in FIG. 4A, a chip including a substrate 202, a semiconductor chip 23 and through wirings 221 and 222 provided on the substrate 202, and an insulating layer 21 provided so as to embed them. The embedded structure 27 is prepared.

The constituent material of the substrate 202 is not particularly limited, and examples thereof include a metal material, a glass material, a ceramic material, a semiconductor material, and an organic material. Further, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used for the substrate 202.

The semiconductor chip 23 is adhered on the substrate 202. In this manufacturing method, as an example, a plurality of semiconductor chips 23 are placed side by side on the same substrate 202 while being separated from each other. The plurality of semiconductor chips 23 may be of the same type or different from each other. Further, the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

If necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23. The interposer functions as, for example, a rewiring layer of the semiconductor chip 23. Therefore, the interposer may be provided with a pad (not shown) for electrically connecting to the electrode of the semiconductor chip 23 described later. As a result, the pad spacing and the arrangement pattern of the semiconductor chip 23 can be converted, and the degree of freedom in designing the semiconductor device 1 can be further increased.

For such an interposer, for example, a silicon substrate, a ceramic substrate, an inorganic substrate such as a glass substrate, an organic substrate such as a resin substrate, or the like is used.

The insulating layer 21 may be a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin as mentioned as a component of the photosensitive resin composition, and may be a normal sealing used in the technical field of semiconductors. It may be a stop material.

Examples of the constituent materials of the through wires 221 and 222 include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy and the like.

The chip embedded structure 27 manufactured by a method different from the above may be prepared.

[2] Upper wiring layer forming step S2
Next, the upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor chip 23.

[2-1] First resin film placement step S20
First, as shown in FIG. 4B, the photosensitive resin varnish 5 is applied (arranged) on the insulating layer 21 and the semiconductor chip 23. As a result, as shown in FIG. 4C, a liquid film of the photosensitive resin varnish 5 is obtained. The photosensitive resin varnish 5 is the photosensitive resin composition of the present embodiment and is a varnish having photosensitivity.

The photosensitive resin varnish 5 is applied using, for example, a spin coater, a bar coater, a spray device, an inkjet device, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 (see FIG. 4D) can be formed. As a result, the upper wiring layer 25 can be made thinner, and the semiconductor device 1 can be easily made thinner.

The viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone plate type viscometer (TV-25, manufactured by Toki Sangyo) under the condition of a rotation speed of 100 rpm.

Next, the liquid film of the photosensitive resin varnish 5 is dried. As a result, the photosensitive resin layer 2510 shown in FIG. 4D is obtained.

The drying conditions of the photosensitive resin varnish 5 are not particularly limited, and examples thereof include conditions of heating at a temperature of 80 to 150 ° C. for 1 to 60 minutes.

In this step, instead of the process of applying the photosensitive resin varnish 5, a process of arranging a photosensitive resin film formed by forming the photosensitive resin varnish 5 into a film may be adopted. The photosensitive resin film is the photosensitive resin composition of the present embodiment and is a resin film having photosensitivity.

The photosensitive resin film is produced, for example, by applying the photosensitive resin varnish 5 to the underground surface of a carrier film or the like by various coating devices, and then drying the obtained coating film.

After the photosensitive resin layer 2510 is formed in this way, the photosensitive resin layer 2510 is subjected to pre-exposure heat treatment, if necessary. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 are stabilized, and the reaction in the first exposure step S21 described later can be stabilized. On the other hand, by heating under the heating conditions as described later, the adverse effect of heating on the photoacid generator can be minimized.

The temperature of the pre-exposure heat treatment is preferably 70 to 130 ° C, more preferably 75 to 120 ° C, and even more preferably 80 to 110 ° C. If the temperature of the pre-exposure heat treatment is lower than the lower limit, the purpose of stabilizing the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, when the temperature of the pre-exposure heat treatment exceeds the upper limit value, the movement of the photoacid generator becomes too active, and even if light is irradiated in the first exposure step S21 described later, acid is less likely to be generated. However, there is a risk that the processing accuracy of patterning will decrease due to the widening of the area.

The time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment, but is preferably 1 to 10 minutes, more preferably 2 to 8 minutes, and even more preferably 2 to 8 minutes at the temperature. It takes 3 to 6 minutes. If the pre-exposure heat treatment time is less than the lower limit, the heating time is insufficient, and the purpose of stabilizing the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the pre-exposure heat treatment time exceeds the upper limit, the heating time is too long, and even if the pre-exposure heat treatment temperature is within the above range, the action of the photoacid generator is inhibited. There is a risk that it will end up.

The atmosphere of the heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is considered to be in the atmosphere in consideration of work efficiency and the like.

The atmospheric pressure is not particularly limited and may be under reduced pressure or pressurized, but is set to normal pressure in consideration of work efficiency and the like. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-2] First exposure step S21
Next, the photosensitive resin layer 2510 is exposed to light.

First, as shown in FIG. 4D, the mask 412 is placed in a predetermined region on the photosensitive resin layer 2510. Then, light (active radiation) is irradiated through the mask 412. As a result, the photosensitive resin layer 2510 is exposed to light according to the pattern of the mask 412.

Note that FIG. 4D illustrates the case where the photosensitive resin layer 2510 has so-called negative photosensitive. In this example, in the photosensitive resin layer 2510, the region corresponding to the light-shielding portion of the mask 412 is imparted with solubility in a developing solution.

On the other hand, in the region corresponding to the transmissive portion of the mask 412, for example, acid is generated by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction of the thermosetting resin in the step described later.

The exposure amount in the exposure process is not particularly limited, but is preferably 100 to 2000 mJ / cm ² , and more preferably 200 to 1000 mJ / cm ² . This makes it possible to suppress underexposure and overexposure in the photosensitive resin layer 2510. As a result, high patterning accuracy can be finally realized.
Then, if necessary, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment.

The temperature of the post-exposure heat treatment is not particularly limited, but is preferably 50 to 150 ° C, more preferably 50 to 130 ° C, still more preferably 55 to 120 ° C, and particularly preferably 60 to 110 ° C. Will be done. By performing the heat treatment after exposure at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be sufficiently reacted in a shorter time. By setting the temperature within the above range, it is possible to suppress a decrease in processing accuracy of patterning due to promotion of acid diffusion.

By setting the temperature of the post-exposure heat treatment to be equal to or higher than the lower limit, the reaction rate of the thermosetting resin can be increased and the productivity can be increased. On the other hand, by setting the temperature of the post-exposure heat treatment to be equal to or lower than the upper limit, it is possible to suppress a decrease in patterning processing accuracy due to the promotion of acid diffusion.

On the other hand, the time of the post-exposure heat treatment is appropriately set according to the temperature of the post-exposure heat treatment, but the temperature is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, and even more preferably. It takes 3 to 15 minutes. By performing the heat treatment after the exposure in such a time, the thermosetting resin can be sufficiently reacted, and the diffusion of the acid can be suppressed to suppress the deterioration of the patterning processing accuracy.

The atmosphere of the post-exposure heat treatment is not particularly limited and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is considered to be in the atmosphere in consideration of work efficiency and the like.

Further, the atmospheric pressure of the post-exposure heat treatment is not particularly limited and may be under reduced pressure or pressurized, but is set to normal pressure in consideration of work efficiency and the like. As a result, the pre-exposure heat treatment can be performed relatively easily. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-3] First development step S22
Next, the photosensitive resin layer 2510 is subjected to a developing process. As a result, an opening 423 penetrating the photosensitive resin layer 2510 is formed in the region corresponding to the light-shielding portion of the mask 412 (see FIG. 5 (e)).
Examples of the developer include an organic developer, a water-soluble developer and the like.

[2-4] First curing step S23
After the development treatment, the photosensitive resin layer 2510 is subjected to a curing treatment (heat treatment after development). The conditions of the curing treatment are not particularly limited, but the heating temperature is about 160 to 250 ° C. and the heating time is about 30 to 240 minutes. As a result, the photosensitive resin layer 2510 can be cured while suppressing the thermal influence on the semiconductor chip 23, and the organic insulating layer 251 can be obtained.

[2-5] Wiring layer forming step S24
Next, the wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5 (f)). The wiring layer 253 is formed by obtaining a metal layer by a vapor phase film forming method such as a sputtering method or a vacuum vapor deposition method, and then patterning the metal layer by a photolithography method and an etching method.

Prior to the formation of the wiring layer 253, a surface modification treatment such as plasma treatment may be performed.

[2-6] Second resin film placement step S25
Next, as shown in FIG. 5 (g), the photosensitive resin layer 2520 is obtained in the same manner as in the first resin film arranging step S20. The photosensitive resin layer 2520 is arranged so as to cover the wiring layer 253.

Then, if necessary, the photosensitive resin layer 2520 is subjected to pre-exposure heat treatment. The treatment conditions are, for example, the conditions described in the first resin film arranging step S20.

[2-7] Second exposure step S26
Next, the photosensitive resin layer 2520 is exposed to light. The processing conditions are, for example, the conditions described in the first exposure step S21.

Then, if necessary, the photosensitive resin layer 2520 is subjected to post-exposure heat treatment. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second development step S27
Next, the photosensitive resin layer 2520 is subjected to a developing process. The processing conditions are, for example, the conditions described in the first developing step S22. As a result, an opening 424 penetrating the photosensitive resin layers 2510 and 2520 is formed (see FIG. 5 (h)).

[2-9] Second curing step S28
After the development treatment, the photosensitive resin layer 2520 is subjected to a curing treatment (heat treatment after development). The curing conditions are, for example, the conditions described in the first curing step S23. As a result, the photosensitive resin layer 2520 is cured to obtain an organic insulating layer 252 (see FIG. 6 (i)).

In the present embodiment, the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252, but may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be repeatedly added.

[2-10] Through wiring forming step S29
Next, the through wiring 254 shown in FIG. 6 (i) is formed with respect to the opening 424.

A known method is used for forming the through wiring 254, and for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 252. The seed layer is formed on the upper surface of the organic insulating layer 252 together with the inner surface (side surface and bottom surface) of the opening 424.

As the seed layer, for example, a copper seed layer is used. Further, the seed layer is formed by, for example, a sputtering method.

Further, the seed layer may be made of the same kind of metal as the through wiring 254 to be formed, or may be made of a different kind of metal.

Next, a resist layer (not shown) is formed on a region other than the opening 424 among the seed layers (not shown). Then, using this resist layer as a mask, the opening 424 is filled with metal. For this filling, for example, an electrolytic plating method is used. Examples of the metal to be filled include copper or a copper alloy, aluminum or an aluminum alloy, gold or a gold alloy, silver or a silver alloy, nickel or a nickel alloy and the like. In this way, the conductive material is embedded in the opening 424, and the through wiring 254 is formed.

Then, a resist layer (not shown) is removed. Further, the seed layer (not shown) on the organic insulating layer 252 is removed. For this, for example, a flash etching method can be used.
The location where the through wiring 254 is formed is not limited to the position shown in the figure.

[3] Substrate peeling step S3
Next, as shown in FIG. 6 (j), the substrate 202 is peeled off. As a result, the lower surface of the insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4
Next, as shown in FIG. 6 (k), the lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. The lower layer wiring layer 24 may be formed by any method, and may be formed in the same manner as, for example, the above-mentioned upper layer wiring layer forming step S2.

The lower layer wiring layer 24 thus formed is electrically connected to the upper layer wiring layer 25 via the through wiring 221.

[5] Solder bump forming step S5
Next, as shown in FIG. 6 (L), the solder bump 26 is formed on the lower wiring layer 24. Further, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24, if necessary.
As described above, the through silicon via substrate 2 is obtained.

The through silicon via substrate 2 shown in FIG. 6 (L) can be divided into a plurality of regions. Therefore, for example, by disassembling the through silicon via substrate 2 along the alternate long and short dash line shown in FIG. 6 (L), a plurality of through silicon via substrates 2 can be efficiently manufactured. For example, a diamond cutter or the like can be used for individualization.

[6] Laminating step S6
Next, the semiconductor package 3 is arranged on the individualized through electrode substrate 2. As a result, the semiconductor device 1 shown in FIG. 1 is obtained.

Such a manufacturing method of the semiconductor device 1 can be applied to a wafer level process or a panel level process using a large-area substrate. As a result, the manufacturing efficiency of the semiconductor device 1 can be increased and the cost can be reduced.

<Modification example of semiconductor device>
Next, a modification of the semiconductor device according to the embodiment will be described.

(First modification)
First, a first modification will be described.
FIG. 7 is a partially enlarged cross-sectional view showing a first modification of the semiconductor device according to the embodiment.
Hereinafter, the first modification will be described, but in the following description, the differences from the embodiments shown in FIGS. 1 and 2 will be mainly described, and the description thereof will be omitted for the same matters. The same components as those in FIGS. 1 and 2 are designated by the same reference numerals in FIG.

The semiconductor device 1A shown in FIG. 7 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except that the structure of the lower wiring layer is different. That is, the semiconductor device 1A shown in FIG. 7 includes a semiconductor chip 23 provided with a land 231, a lower layer wiring layer 24A, and a solder bump 26. The structure of the lower layer wiring layer 24A is different from the structure of the lower layer wiring layer 24 shown in FIGS. 1 and 2.

Specifically, the lower wiring layer 24A shown in FIG. 7 includes an organic insulating layer 240 provided on the lower surface of the semiconductor chip 23 and an organic insulating layer 241 provided below the organic insulating layer 240. .. At least one of these organic insulating layers 240 and 241 is formed by using a photosensitive resin composition for a bump protective film. The lower surface of the semiconductor chip 23 is covered with the organic insulating layers 240 and 241.

Further, the lower wiring layer 24A shown in FIG. 7 includes a bump adhesion layer 245 that is electrically connected to both the land 231 and the solder bump 26.

By using the photosensitive resin composition for the bump protective film in the production of such a first modification, the patterning accuracy is high, and the deterioration of the metal contained in the land 231 and the bump adhesion layer 245 can be suppressed. Therefore, a highly reliable semiconductor device 1A can be obtained.

(Second modification)
Next, a second modification will be described.
FIG. 8 is a partially enlarged cross-sectional view showing a second modification of the semiconductor device according to the embodiment.
Hereinafter, the second modification will be described, but in the following description, the differences from the embodiments shown in FIGS. 1 and 2 will be mainly described, and the description thereof will be omitted for the same matters. The same components as those in FIGS. 1 and 2 are designated by the same reference numerals in FIG.

The semiconductor device 1B shown in FIG. 8 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except that the structure of the lower wiring layer is different. That is, the semiconductor device 1B shown in FIG. 8 includes a semiconductor chip 23 provided with a land 231, a lower layer wiring layer 24B, and a solder bump 26. The structure of the lower layer wiring layer 24B is different from the structure of the lower layer wiring layer 24 shown in FIGS. 1 and 2.

Specifically, the lower wiring layer 24B shown in FIG. 8 includes an organic insulating layer 240 provided on the lower surface of the semiconductor chip 23, an organic insulating layer 241 provided below the organic insulating layer 240, and an organic insulating layer 241. It is provided with an organic insulating layer 242 provided below the above. At least one of these organic insulating layers 240, 241 and 242 is formed by using a photosensitive resin composition for a bump protective film.

Further, the lower wiring layer 24B shown in FIG. 8 includes a wiring layer 243 electrically connected to the land 231 and a bump adhesion layer 245 electrically connected to both the wiring layer 243 and the solder bump 26. It is equipped with. The organic insulating layers 240 and 241 are interposed between the semiconductor chip 23 and the wiring layer 243, and the lower surface of the wiring layer 243 is covered with the organic insulating layer 242.

By using the photosensitive resin composition for the bump protective film in the production of such a second modification, the patterning accuracy is high and the deterioration of the metal contained in the land 231, the wiring layer 243, and the bump adhesion layer 245 is suppressed. be able to. Therefore, a highly reliable semiconductor device 1B can be obtained.

<Electronic device>
The electronic device according to the present embodiment includes the semiconductor device according to the above-described present embodiment.

The electronic device according to the present embodiment is not particularly limited as long as it includes such a semiconductor device, but for example, a mobile phone, a smartphone, a tablet terminal, a wearable terminal, an information device such as a personal computer, a server, or a router. Such as communication equipment, robots, industrial equipment such as machine tools, vehicle control computers, in-vehicle equipment such as car navigation systems, and the like.

Although the present invention has been described above based on the illustrated embodiments, the present invention is not limited thereto.

For example, the method for manufacturing a semiconductor device of the present invention may be an embodiment in which an arbitrary target step is added.

Further, the photosensitive resin composition, the semiconductor device and the electronic device of the present invention may have any element added to the above embodiment.

Further, the photosensitive resin composition is applied not only to semiconductor devices but also to, for example, MEMS (Micro Electro Electrical Systems), bump protective films of various sensors, liquid crystal display devices, bump protective films of display devices such as organic EL devices, and the like. It is possible.

Further, the form of the package of the semiconductor device is not limited to the illustrated form, and may be any form.
Hereinafter, an example of the reference form will be added.
1. 1. A negative photosensitive resin composition for film formation.
Epoxy resin and
With phenoxy resin,
A negative photosensitive resin composition comprising a photoacid generator.
2. 2. 1. 1. The negative photosensitive resin composition according to the above.
A negative photosensitive resin composition having a weight average molecular weight of 10,000 or more and 100,000 or less.
3. 3. 1. 1. Or 2. The negative photosensitive resin composition according to the above.
The negative photosensitive resin composition has a content of the phenoxy resin of 10 parts by mass or more and 60 parts by mass or less with respect to 100% by mass of the epoxy resin.
4. 1. 1. ~ 3. The negative photosensitive resin composition according to any one of the above.
A negative photosensitive resin composition having a viscosity at 25 ° C. of the negative photosensitive resin composition of 10 cP or more and 6000 cP or less.
5. 1. 1. ~ 4. The negative photosensitive resin composition according to any one of the above.
The epoxy resin is a negative photosensitive resin composition containing a polyfunctional epoxy resin having three or more epoxy groups in the molecule.
6. 1. 1. ~ 5. The negative photosensitive resin composition according to any one of the above.
A negative photosensitive resin composition containing a surfactant.
7. 1. 1. ~ 6. The negative photosensitive resin composition according to any one of the above.
A negative photosensitive resin composition containing an adhesion aid.
8. 1. 1. ~ 7. The negative photosensitive resin composition according to any one of the above.
A negative photosensitive resin composition containing a solvent.
9. 1. 1. ~ 8. The negative photosensitive resin composition according to any one of the above.
A negative photosensitive resin composition in which the cured film of the negative photosensitive resin composition is used to form an insulating layer of a rewiring layer.
10. With semiconductor chips
It is provided with a rewiring layer provided on the surface of the semiconductor chip.
The insulating layer in the rewiring layer is 1. ~ 9. A semiconductor device comprising a cured product of the negative photosensitive resin composition according to any one of the above.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to the description of these Examples.

(Preparation of photosensitive resin composition)
The raw materials of each component blended according to Table 1 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to obtain a mixed solution. Then, the mixed solution was filtered through a 0.2 μm polypropylene filter to obtain a varnish-like photosensitive resin composition having a viscosity of about 100 cP at 25 ° C.
The viscosity of the photosensitive resin composition was measured using a cone plate type viscometer (TV-25, manufactured by Toki Sangyo) at a rotation speed of 100 rpm.

The details of the raw materials of each component in Table 1 are as follows.
(Epoxy resin)
Epoxy resin 1: Epoxy resin 1: Polyfunctional epoxy resin represented by the following structure (EPPN201 manufactured by Nippon Kayaku Co., Ltd., phenol novolac type epoxy resin, solid at 25 ° C., n = about 5)

(Phenoxy resin)
-Phenoxy resin 1: Bisphenol A type phenoxy resin (jER1256, manufactured by Mitsubishi Chemical Corporation, Mw: approx. 50,000))
-Phenoxy resin 2: Bisphenol A / F type phenoxy resin (YP-70, manufactured by Nippon Steel Sumitomo Chemical Co., Ltd., MW: about 50,000 to 60,000)

(Phenol resin)
-Phenol resin 1: Novolac type phenol resin represented by the following structure (PR-15470, manufactured by Sumitomo Bakelite Co., Ltd.)

(Photoacid generator)
-Photoacid generator 1: Triarylsulfonium borate salt (manufactured by San-Apro, CPI-310B)

(Surfactant)
-Surfactant 1: Fluorine-containing group / lipophilic group-containing oligomer (R-41, manufactured by DIC Corporation)

(Silane coupling agent)
-Silane coupling agent 1: 3-glycidoxypropyltrimethoxysilane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.)

The obtained photosensitive resin composition was evaluated based on the following evaluation items.

<Evaluation of patterning property>
The obtained photosensitive resin composition was applied onto an 8-inch silicon wafer using a spin coater. After the coating, it was prebaked in the air on a hot plate at 120 ° C. for 3 minutes to obtain a coating film having a film thickness of about 9.0 μm.
This coating film was irradiated with i-line through a mask manufactured by Toppan Printing Co., Ltd. (a remaining pattern and a punching pattern having a width of 1.0 to 100 μm are drawn).
For irradiation, an i-line stepper (NSR-4425i manufactured by Nikon Corporation) is used, the focus value is the best focus, and the exposure amount is the central part in the film thickness direction of the via pattern of 10 μm (in the case of 9 μm film thickness, the film thickness 4. The exposure was applied with an aperture width of 10 μm ± 0.2 μm at a height of 5 μm).
After the exposure, the wafer was placed on a hot plate and baked in the air at 70 ° C. for 5 minutes.
Then, PGMEA was used as a developing solution, and the unexposed portion was dissolved and removed by spray developing for 30 seconds.
Then, the cross section of the via pattern having a width of 100 μm on the obtained coating film sample was observed using a tabletop SEM, the angle of the taper angle (°) was measured, and the pattern shape was evaluated. The angle formed by the bottom surface of the coating film and the side surface in the opening of the coating film was defined as the taper angle. The evaluation results are shown in Table 1.
Evaluation criteria for patterning:
×: Taper angle is less than 85 ° 〇: Taper angle is 85 to 90 °
×: The taper angle is over 90 °

<Evaluation of heat resistance>
(Preparation of evaluation test piece)
Preparation of cured film (1) The obtained photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness would be 10 μm, and the film thickness would be 10 μm in the air at 120 ° C. for 3 minutes. It was dried to form a photosensitive resin film.
(2) The photosensitive resin film obtained in (1) above was exposed to the entire surface at 800 mJ / cm ² using a manual exposure machine (HMW-201GX manufactured by ORC Manufacturing Co., Ltd.). Subsequently, the substrate was heated after exposure at 70 ° C. for 5 minutes in the air using a hot plate.
(3) After the above (2), PGMEA was used as a developing solution, spray development was performed under the conditions of 3000 rpm and 15 seconds, and then the developing solution was removed from the surface of the photosensitive resin film under the conditions of 3000 rpm and 15 seconds. ..
(4) After the above (3), the photosensitive resin film was cured by heat treatment at 170 ° C. for 180 minutes in a nitrogen atmosphere to obtain a cured film.
(5) One cycle of holding the silicon wafer with the cured film of (4) above for 30 minutes at -65 ° C / 30 minutes at 150 ° C using a thermal shock device (TSA-72EH-W manufactured by Espec Co., Ltd.). A TCT (Thermal Cycle Test) was carried out in which 200 cycles were processed as cycles (TCT processing).
(6) After the above (4), the film-like cured film was peeled off from the silicon wafer by immersing in 2% hydrofluoric acid, and the cured film was dried overnight to obtain a cured film A. On the other hand, after the above (5), the film-like cured film was peeled off from the silicon wafer by immersing in 2% hydrofluoric acid, and the cured film was dried overnight to obtain a cured film C.
(7) Using 100 mg each of the cured film A and the cured film C obtained in (6) above, they were exposed to the environment at 85 ° C. for 12 hours (exposure treatment) to obtain the cured film B and the cured film D. ..
Compare the cured films A and B obtained in the above <Preparation of cured film>, or compare the cured films C and D, and from the weight change before and after the exposure treatment, the water absorption rate after curing and the water absorption after TCT. The water absorption rate (%) was calculated.

The "water absorption rate after curing" and the "water absorption rate after TCT" in Table 1 were calculated based on the following formulas.
(Water absorption after curing)
"Water absorption after curing" (%) = (BA) / A × 100
A: The weight of the cured film A obtained in (6) above was exposed to B: the cured film A obtained in (7) above without TCT treatment of the cured film obtained in (4) above. Weight of cured film B

(Water absorption rate after TCT)
"Water absorption rate after TCT" (%) = (DC) / C × 100
C: The cured film obtained in (4) above is subjected to TCT treatment, and the weight of the cured film C obtained in (6) above is exposed. D: The cured film C is exposed and cured obtained in (7) above. Weight of membrane D

Next, the measured "water absorption rate after curing" and "water absorption rate after TCT" were evaluated in light of the following evaluation criteria. The evaluation results are shown in Table 1.
Evaluation criteria for heat resistance:
〇: The difference between the water absorption rate after curing and the water absorption rate after TCT is 1% or less ×: The difference between the water absorption rate after curing and the water absorption rate after TCT is more than 1%

It was found that the photosensitive resin compositions of Examples 1 and 2 were excellent in heat resistance and reliability as compared with Comparative Example 1, and had better patterning property (pattern shape) as compared with Comparative Example 2. Such photosensitive resin compositions of Examples 1 and 2 are suitable as a negative photosensitive resin composition used for an insulating film of a wiring layer or the like.

This application claims priority on the basis of Japanese application Japanese Patent Application No. 2018-159354 filed on August 28, 2018, the entire disclosure of which is incorporated herein by reference.

Claims (6)

With semiconductor chips
It is provided with a rewiring layer provided on the surface of the semiconductor chip.
A semiconductor device in which the insulating layer in the rewiring layer is composed of a cured product of a negative photosensitive resin composition (excluding a photosensitive resin varnish containing an epoxy resin component that is liquid at room temperature) .
The negative photosensitive resin composition contains an epoxy resin, a phenoxy resin, and a photoacid generator, and does not contain a phenol resin.
The epoxy resin contains a polyfunctional epoxy resin having three or more epoxy groups in the molecule.
The phenoxy resin contains one or more selected from bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, and copolymer phenoxy resin of bisphenol A type and bisphenol F type.
The weight average molecular weight of the phenoxy resin is 10,000 or more and 100,000 or less.
The content of the phenoxy resin is 10 parts by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the epoxy resin.
The negative photosensitive resin composition is a semiconductor device having a <water absorption rate X after curing> of 1.5 to 2.0% when a cured film is formed according to the following <preparation of a cured film>.
<Preparation of cured film>
(1) The negative photosensitive resin composition is applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness becomes 10 μm, and dried in the air at 120 ° C. for 3 minutes to be photosensitive. Form a resin film.
(2) The photosensitive resin film obtained in (1) is exposed to the entire surface at 800 mJ / cm ² using a manual exposure machine. Subsequently, the exposed photosensitive resin film is heated in the air at 70 ° C. for 5 minutes after exposure using a hot plate.
(3) After (2), propylene glycol monomethyl ether acetate is used as a developing solution, and spray development is performed under the conditions of 3000 rpm for 15 seconds, and then the developing solution is applied to the surface of the photosensitive resin film under the conditions of 3000 rpm for 15 seconds. Remove from.
(4) After (3), the photosensitive resin film is cured by heat treatment at 170 ° C. for 180 minutes in a nitrogen atmosphere to obtain a cured film.
(5) After (4), the film-like cured film is peeled off from the silicon wafer by immersing in 2% hydrofluoric acid, and the cured film is dried overnight to obtain a cured film A.
(6) Using 100 mg of the cured film A obtained in (5), exposure is performed in an environment of 85 ° C. and 85% for 12 hours (exposure treatment) to obtain a cured film B.
<Water absorption rate X after curing>
The cured films A and B obtained in <Preparation of the cured film> are compared, and the water absorption rate X (%) after curing is calculated from the weight change before and after the exposure treatment based on the following formula.
"Water absorption rate X after curing" (%) = (BA) / A × 100
A: Weight of the cured film A obtained in (5) B: Weight of the cured film B obtained in (6) The semiconductor device according to claim 1.
In the negative photosensitive resin composition, the difference between the <water absorption rate X after curing> and the <water absorption rate Y after heat cycle treatment> in the cured film subjected to the <heat cycle treatment> is 1% or less. Is a semiconductor device.
<Thermodynamic cycle processing>
(7) One cycle is a cycle in which the cured film attached to the silicon wafer obtained in (4) is held at −65 ° C. for 30 minutes / at 150 ° C. for 30 minutes using a thermodynamic shock device. A thermodynamic cycle process of 200 cycles is performed.
(8) After (7), the film-like cured film is peeled off from the silicon wafer by immersing in 2% hydrofluoric acid, and the cured film is dried overnight to obtain a cured film C.
(9) Using 100 mg of the cured film C obtained in (8), exposure is performed in an environment of 85 ° C. and 85% for 12 hours (exposure treatment) to obtain a cured film D.
<Water absorption rate Y after heat cycle treatment>
The cured films C and D are compared, and the water absorption rate Y (%) after the heat cycle treatment is calculated from the weight change before and after the exposure treatment based on the following formula.
"Water absorption rate Y after heat cycle treatment" (%) = (DC) / C × 100
C: Weight of the cured film C obtained in (8) D: Weight of the cured film D obtained in (9) The semiconductor device according to claim 1 or 2.
A semiconductor device having a viscosity of the negative photosensitive resin composition at 25 ° C. of 10 cP or more and 6000 cP or less. The semiconductor device according to any one of claims 1 to 3.
A semiconductor device in which the negative photosensitive resin composition further contains a surfactant. The semiconductor device according to any one of claims 1 to 4.
A semiconductor device in which the negative photosensitive resin composition further contains an adhesion aid. The semiconductor device according to any one of claims 1 to 5.
A semiconductor device in which the negative photosensitive resin composition further contains a solvent.

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