TW202020565A - Negative photosensitive resin composition and semiconductor device using the same - Google Patents

Abstract

The present invention is a negative photosensitive resin composition for film formation, the composition including an epoxy resin, a phenoxy resin, and a photoacid generator.

Description

Negative photosensitive resin composition, and semiconductor device using the same

The present invention relates to a negative photosensitive resin composition and a semiconductor device using the same.

So far, various developments have been made to photosensitive resin compositions. As such a technique, for example, the technique described in Patent Document 1 is known. Patent Literature 1 describes a photosensitive resin composition containing an epoxy resin, a phenol resin, and a photopolymerization initiator (Table 1 of Patent Literature 1). Prior technical literature Patent Literature

Patent Literature 1: WO2014/010204 Gazette

[Problems to be solved by the invention]

However, as a result of research by the present inventors, it was found that the photosensitive resin composition described in Patent Document 1 described above has room for improvement in heat resistance reliability and pattern formability. [Technical means to solve the problem]

As a result of further investigation by the present inventors, it was found that when the epoxy resin and the phenol resin are used in combination in the negative photosensitive resin composition, the pattern shape becomes good, but the water absorption rate increases. In addition, when an epoxy resin is used alone without using a phenol resin, although the increase in water absorption rate can be suppressed, the pattern shape may be adversely affected.

Based on the trade-off relationship between this heat resistance reliability and pattern formability, the results of in-depth research on the combination of suitable resins have found that by using an epoxy resin and a phenoxy resin together, the increase in water absorption is suppressed, And the shape of the pattern also becomes good, so as to complete the present invention.

According to the present invention, there is provided a negative-type photosensitive resin composition, which is a negative-type photosensitive resin composition for film formation, which contains: Epoxy resin, Phenoxy resin, and Photoacid generator. [Effect of invention]

According to the present invention, there is provided a negative photosensitive resin composition excellent in heat resistance reliability and pattern formability, and a semiconductor device using the same.

Hereinafter, embodiments of the present invention will be described using drawings. In addition, in all drawings, the same constituent elements are denoted by the same symbols, and descriptions are omitted as appropriate. In addition, the figure is a schematic diagram and does not match the actual size ratio.

The outline of the photosensitive resin composition of this embodiment is shown. The photosensitive resin composition of this embodiment is a negative photosensitive resin composition for film formation containing an epoxy resin, a phenoxy resin, and a photoacid generator.

As a result of the inventor's research, the following observations were made. It can be seen that in the negative photosensitive resin composition, if the "epoxy resin" and the "phenol resin" that promote the polymerization reaction of the epoxy resin are used together from the viewpoint of improving the pattern formability, a good pattern shape can be achieved However, the water absorption rate increases, and the heat resistance reliability decreases. Although the detailed mechanism is not clear, it is believed that the following reasons are responsible for the increase in the water absorption rate: the cross-linking reaction between the epoxy resins during exposure, the result of consuming most of the epoxy resin before curing, the epoxy resin does not progress much during curing The reaction with the phenol resin causes the phenol resin having a phenolic hydroxyl group to remain without reacting.

On the other hand, if "epoxy resin" is used alone without using phenol resin, although the increase in water absorption can be suppressed, the pattern formability will be reduced.

Therefore, according to the trade-off relationship between pattern formability and heat-resistant reliability, the components used in combination with the epoxy resin were studied in depth. As a result, it was found that by using "epoxy resin" and "phenoxy resin" together, it is possible to improve the pattern forming property and the heat resistance reliability.

Although the detailed mechanism is not clear, the following can be considered. In the single epoxy resin system, the reaction speed during PEB is rapid, which results in the reaction being performed in a wider range than the exposure range, and tends to become narrower than the target opening diameter. In particular, the reaction proceeds more quickly on the upper portion of the membrane where PAG can be easily activated, so the shape of the opening easily becomes inverted tapered. On the other hand, it is thought that by using an epoxy resin and a phenoxy resin together, such an excessive reaction can be suppressed, and therefore, a good pattern shape can be obtained, and the pattern formability can be improved. In addition, compared with the case of using a phenol resin together, the increase in water absorption can be suppressed.

According to the photosensitive resin composition of this embodiment, the heat-resistant reliability and the pattern formability can be improved, and therefore, it is possible to realize a semiconductor device excellent in connection reliability or an electronic device using the same.

In addition, it is expected that the photosensitive resin composition of this embodiment can be preferably used for forming an insulating layer of a redistribution layer formed on a semiconductor wafer or the like.

The resin film of the photosensitive resin composition of this embodiment can be used as a permanent film, a protective film, an insulating film, a redistribution material, etc. in electrical and electronic equipment (electronic devices). The resin film includes a cured film that is cured by heating.

Among them, "electrical and electronic equipment" refers to semiconductor wafers, semiconductor components, printed wiring boards, circuits, television receivers or monitors and other display devices, information and communication terminals, light-emitting diodes, physical batteries, chemical batteries and other application electronics Technology components, devices, finished products, and other electrical-related machines.

Among these, the photosensitive resin composition of this embodiment can be suitably used for the photosensitive resin composition for bump protection films, for example. The resin films provided around the electrical connection elements such as bumps, lands, and wiring are collectively referred to as "bump protection films". The photosensitive resin composition for bump protection film means the resin composition for forming a bump protection film.

In addition, as a specific example of the bump protective film, for example, a passivation film, an overcoat, an interlayer insulating film, etc. provided around the electrical connection element may be mentioned. Furthermore, although the resin film is provided on the semiconductor wafer, it may be provided close to the semiconductor wafer, or may be provided at a position away from the semiconductor wafer like a rewiring layer or a buildup wiring layer.

Next, the details of the photosensitive resin composition of this embodiment will be described. (Epoxy resin) The photosensitive resin composition of this embodiment contains an epoxy resin. This can improve the film physical properties or processability in the resin film of the photosensitive resin composition.

As the epoxy resin, for example, an epoxy resin having two or more epoxy groups in one molecule can be used. The epoxy resin can use all monomers, oligomers, and polymers, and its molecular weight or molecular structure is not particularly limited. Examples of the epoxy resin include phenol novolac epoxy resin, cresol novolac epoxy resin, cresol naphthol epoxy resin, biphenyl epoxy resin, and biphenyl aralkyl ( biphenyl aralkyl) type epoxy resin, naphthalene skeleton type epoxy resin, bisphenol A type epoxy resin, bisphenol A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F bicyclic Oxypropyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, epoxypropyl ether type epoxy resin, aromatic multifunctional epoxy resin, aliphatic epoxy resin, aliphatic Functional epoxy resin, alicyclic epoxy resin, multifunctional alicyclic epoxy resin, etc. Epoxy resins can be used alone or in combination.

The epoxy resin can contain a solid epoxy resin having two or more epoxy groups in the molecule. As the above-mentioned solid epoxy resin, it has two or more epoxy groups, and those that are solid at 25°C (room temperature) can be used. With this, the mechanical properties in the resin film of the photosensitive resin composition can be improved.

In addition, as the epoxy resin, a multifunctional epoxy resin having three or more functions in a molecule (that is, a multifunctional epoxy resin having three or more epoxy groups in one molecule) can be contained.

As the polyfunctional epoxy resin having more than 3 functions, for example, it is preferably selected from the group consisting of phenol novolak type epoxy resin, cresol novolak type epoxy resin, triphenol methane type epoxy resin, and dicyclopentadiene type One or more epoxy resins of the group consisting of epoxy resin, bisphenol A epoxy resin and tetramethyl bisphenol F epoxy resin is more preferably novolak epoxy resin. With this, the heat resistance of the resin film can be improved, and an appropriate thermal expansion coefficient can be achieved.

In addition, the epoxy resin can include a liquid epoxy resin having two or more epoxy groups in the molecule. This liquid epoxy resin functions as a film-forming agent and can improve the brittleness of the resin film of the photosensitive resin composition.

The liquid epoxy resin has two or more epoxy groups, and an epoxy compound that is liquid at room temperature of 25°C can be used. The viscosity of the liquid epoxy resin at 25°C is, for example, 1 mPa·s to 8000 mPa·s, preferably 5 mPa·s to 1500 mPa·s, and more preferably 10 mPa·s to 1400 mPa·s.

The liquid epoxy resin can contain, for example, a group selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyl diglycidyl ether, and alicyclic epoxy resin. More than one of them. These can be used alone or in combination of two or more. Among them, alkyl diglycidyl ether can be used from the viewpoint of reducing cracks after development.

The epoxy equivalent of the liquid epoxy resin is, for example, 100 g/eq or more and 200 g/eq or less, preferably 105 g/eq or more and 180 g/eq or less, and more preferably 110 g/eq or more and 170 g/eq or less. With this, the brittleness of the resin film can be improved.

The lower limit of the content of the liquid epoxy resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more in the entire nonvolatile component of the photosensitive resin composition. By this, the brittleness of the finally obtained cured film can be improved. On the other hand, the upper limit of the content of the liquid epoxy resin is, for example, 40% by mass or less, preferably 35% by mass or less, and more preferably 30% by mass or less in the entire nonvolatile component of the photosensitive resin composition. With this, the film characteristics of the cured film can be balanced.

The lower limit of the content of the epoxy resin is, for example, 40% by mass or more, preferably 45% by mass or more, and more preferably 50% by mass or more in the entire nonvolatile component of the photosensitive resin composition. Thereby, the heat resistance or mechanical strength of the cured film finally obtained can be improved. On the other hand, the upper limit of the epoxy resin content is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 82% by mass or less in the entire nonvolatile component of the photosensitive resin composition. With this, the pattern formability can be improved.

In the present embodiment, the non-volatile component of the photosensitive resin composition refers to the remaining portion other than volatile components such as water and a solvent. The content of the entire nonvolatile component relative to the photosensitive resin composition refers to the content of the entire nonvolatile component other than the solvent in the photosensitive resin composition when a solvent is contained.

The weight average molecular weight (Mw) of the epoxy resin is not particularly limited, but for example, it is preferably 300 to 9000, and more preferably 500 to 8000. By using a relatively low molecular weight epoxy resin, the reactivity during exposure can be improved.

In addition, the photosensitive resin composition of the present embodiment may contain other thermosetting resins than the above-mentioned epoxy resins. Examples of other thermosetting resins include resins having a tricyclic ring such as urea (urea) resins and melamine resins; unsaturated polyester resins; maleic butadiene diimide resins such as bismaleimide diimide compounds; and polyurethane esters. (Polyurethane) resin; diallyl phthalate resin; polysiloxane resin; benzoxazine resin; polyimide resin; polyimide resin; benzene ring Cyanate resins such as butenocyclobutene resin, novolac cyanate resin, bisphenol A cyanate resin, bisphenol E cyanate resin, tetramethyl bisphenol F cyanate resin, etc. Cyanate resin, etc. These can be used alone or in combination of two or more.

(Phenoxy resin) The photosensitive resin composition of this embodiment contains a phenoxy resin. With this, the flexibility of the resin film of the photosensitive resin composition can be improved.

The weight average molecular weight (Mw) of the phenoxy resin is not particularly limited, but for example, it is preferably 10,000 to 100,000, and more preferably 20,000 to 80,000. By using such a relatively high molecular weight phenoxy resin, it is possible to impart good flexibility to the resin film and also to impart sufficient solubility to the solvent.

In addition, in the present embodiment, the weight average molecular weight is measured as a polystyrene conversion value by gel permeation chromatography (GPC) method, for example.

In addition, as the phenoxy resin, reactive groups such as epoxy groups may be provided at both ends of the molecular chain or within the molecular chain. The reactive group in the phenoxy resin can undergo a crosslinking reaction with the epoxy group in the epoxy resin. By using such a phenoxy resin, the solvent resistance or heat resistance in the resin film can be improved.

As the phenoxy resin, those that are solid at 25°C can be preferably used. Specifically, a phenoxy resin having a nonvolatile content of 90% by mass or more can be preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

Examples of the phenoxy resins include bisphenol A phenoxy resins, bisphenol F phenoxy resins, copolymerized phenoxy resins of bisphenol A and bisphenol F types, and biphenyl phenoxy resins. Based resin, bisphenol S phenoxy resin, copolymerized phenoxy resin of biphenyl phenoxy resin and bisphenol S phenoxy resin, etc., one or more of these can be used mixture. Among them, a phenoxy resin of bisphenol A type or a copolymerized phenoxy resin of bisphenol A type and bisphenol F type can be preferably used.

The lower limit of the content of the phenoxy resin relative to 100 parts by mass of the epoxy resin is, for example, 10 parts by mass or more, preferably 13 parts by mass or more, and more preferably 15 parts by mass or more. With this, the pattern formability can be improved. In addition, flexibility can be improved. On the other hand, the upper limit of the content of the phenoxy resin relative to 100 parts by mass of the epoxy resin is, for example, 60 parts by mass or less, preferably 50 parts by mass or less, and more preferably 40 parts by mass or less. With this, the increase in the moisture absorption rate can be suppressed, and the heat-resistant reliability can be improved. In addition, the solubility of the phenoxy resin can be improved, and a photosensitive resin composition excellent in coatability can be realized. In addition, the epoxy resin used as the reference may be a multifunctional epoxy resin having 3 or more functions.

In addition, the photosensitive resin composition of this embodiment may contain a thermoplastic resin other than the phenoxy resin. Examples of the thermoplastic resin include polyvinyl acetal resin, acrylic resin, polyamide resin (for example, nylon), thermoplastic urethane resin, polyolefin resin (for example, polyethylene, polypropylene, etc.), and polycarbonate Ester, polyester resin (such as polyethylene terephthalate, polybutylene terephthalate, etc.), polyacetal, polyphenylene sulfide, polyether Ether ketone, liquid crystal polymer, fluororesin (for example, polytetrafluoroethylene, polyvinylidene fluoride, etc.), modified polyphenylene ether, poly lanthanum, polyether lanolin, polyarylate, polyimide amide imide, polyether Amidimide, thermoplastic polyimide, etc. These can be used alone or in combination of two or more.

(Photoacid generator) The photosensitive resin composition of this embodiment contains a photoacid generator. This can improve the workability at the time of pattern formation such as sensitivity and resolution. The photosensitive resin composition of this embodiment is a chemically amplified photosensitive resin composition using an acid generated from a photoacid generator as a catalyst, and can be used as a negative photosensitive resin composition.

Examples of the above-mentioned photosensitizer include onium salt compounds. More specifically, it can be exemplified by diazonium salts, diaryliodonium salts and other iodonium salts, triarylammonium salts such as osmium salts, triarylpyranium (triaryl pyrylium) salts, benzylpyridinium sulfide Cationic photopolymerization initiators such as cyanate, dialkyl phenacyl sulfonium salt, dialkyl hydroxyphenyl phosphonium salt, etc. Among them, from the viewpoint of pattern formability, triaryl alum salt can be used.

As the counter anion of the above-mentioned onium salt compound, borate anion, sulfonate anion, gallate anion, phosphorus anion, antimony anion, etc. can be used.

The content of the photoacid generator in the entire solid content of the photosensitive resin composition is, for example, 0.3% by mass to 5.0% by mass, preferably 0.5% by mass to 4.5% by mass, and more preferably 1.0% by mass to 4.0% by mass . By setting it to the above lower limit or more, the pattern formability can be improved. On the other hand, by making the above-mentioned lower limit value or less, insulation reliability can be improved. In this manual, unless otherwise specified, "~" indicates that the upper limit and lower limit are included.

The photosensitive resin composition of this embodiment may contain a photosensitive agent other than the above-mentioned photoacid generator.

(Surfactant) The photosensitive resin composition of this embodiment can contain a surfactant. By containing a surfactant, the wettability during coating can be improved, a uniform resin film can be obtained, and a cured film can be obtained. Examples of the surfactant include fluorine-based surfactants, polysiloxane-based surfactants, alkyl-based surfactants, and acrylic-based surfactants.

The surfactant preferably includes a surfactant containing at least one of fluorine atoms and silicon atoms. In this way, in addition to obtaining a uniform resin film (improvement of coatability) and improvement of developability, it also contributes to improvement of adhesive strength. As such a surfactant, for example, a nonionic surfactant containing at least one of a fluorine atom and a silicon atom is preferable. Examples of commercially available products that can be used as surfactants include F-251, F-253, F-281, F-430, F-477, F-551, and F- of the "MEGAFACE" series manufactured by DIC Corporation. 552, F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F-565, F-568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94 and other fluorine-containing oligomers Structured surfactants, fluorine-containing nonionic surfactants such as FTERGENT250 and FTERGENT251 manufactured by NEOS COMPANY LIMITED, and SILFOAM (registered trademark) series manufactured by Wacker Chemie AG (eg SD 100 TS, SD 670, SD 850, SD 860 , SD 882) and other polysiloxane-based surfactants.

The content of the surfactant is, for example, 0.001 to 1% by mass, and preferably 0.005 to 0.5% by mass in the total amount of nonvolatile components of the photosensitive resin composition.

(Adhesion aid) The photosensitive resin composition of this embodiment can contain an adhesion aid. This can further improve the adhesion to the inorganic material.

The adhesion aid is not particularly limited. For example, a silane coupling agent such as amine silane, epoxy silane, acrylic silane, mercapto silane, vinyl silane, urea silane, or sulfide silane can be used. The silane coupling agent can be used alone or in combination of two or more. Among these, it is more preferable to use epoxy silane (that is, a compound containing both an epoxy site in one molecule and a group that generates a silanol group by hydrolysis).

Examples of the coupling agent containing an amine group include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, and γ-aminopropyltrimethoxysilane. Silane, γ-aminopropylmethyl diethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β ( Aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyl Diethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane, etc. Examples of the epoxy group-containing coupling agent include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β-(3,4- Epoxycyclohexyl) ethyltrimethoxysilane, γ-epoxypropyltrimethoxysilane, etc. Examples of the coupling agent containing an acrylic group or the coupling agent containing a methacrylic group include γ-(methacryloxypropyl)trimethoxysilane and γ-(methacryloxypropyl)methyl Dimethoxysilane, γ-(methacryloxypropyl)methyl diethoxysilane, etc. Examples of the coupling agent containing a mercapto group include 3-mercaptopropyltrimethoxysilane and the like. Examples of the vinyl-containing coupling agent include vinyl tris(β-methoxyethoxy) silane, vinyl triethoxy silane, vinyl trimethoxy silane, and the like. Examples of the coupling agent containing ureido group include 3-ureidopropyltriethoxysilane. Examples of the coupling agent containing a thioether group include bis(3-(triethoxysilyl)propyl) disulfide and bis(3-(triethoxysilyl)propyl) tetrasulfide. . Examples of the coupling agent containing an acid anhydride include 3-trimethoxysilylpropyl succinic anhydride, 3-triethoxysilylpropyl succinic anhydride, and 3-dimethylmethoxysilylpropyl succinic anhydride Wait.

In addition, the silane coupling agent is listed here, but it may also be a titanium coupling agent or a zirconium coupling agent.

The content of the adhesion aid is, for example, preferably 0.3 to 5% by mass, more preferably 0.4 to 4%, and can be set to 0.5 to 3% by mass in the total amount of nonvolatile components of the photosensitive resin composition.

(additive) In addition to the above components, other additives may be added to the photosensitive resin composition of this embodiment as needed. Examples of other additives include antioxidants, fillers such as silica, sensitizers, and film-forming agents.

(Solvent) The photosensitive resin composition of this embodiment can contain a solvent. As the solvent, an organic solvent can be contained. The organic solvent can be used without particular limitation as long as it can dissolve each component of the photosensitive resin composition and does not undergo a chemical reaction with each component.

Examples of the organic solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, and diethylene glycol ethyl methyl ether. Ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol mono Methyl ether acetate, dipropylene glycol methyl n-propyl ether, butyl acetate, γ-butyrolactone, etc. These can be used alone or in combination.

The above-mentioned solvent is preferably used so that the concentration of the total nonvolatile content in the photosensitive resin composition becomes, for example, 30 to 75% by mass. By setting it as this range, each component can be fully dissolved, and good coating property can be ensured. Furthermore, by adjusting the content of non-volatile components, the viscosity of the photosensitive resin composition can be appropriately controlled.

The viscosity of the varnish-like photosensitive resin composition at 25° C. is, for example, 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. By setting the viscosity within the above numerical range, the thickness of the coating film can be appropriately controlled. For example, a thickness of 1 μm to 100 μm can be realized, preferably a thickness of 3 μm to 80 μm, and more preferably a thickness of 5 μm to 50 μm.

Next, the semiconductor device and the electronic device of this embodiment will be described.

FIG. 1 is a longitudinal sectional view showing an example of the semiconductor device of this embodiment. 2 is a partially enlarged view of the area surrounded by the chain line of FIG. 1. In addition, in the following description, the upper side in FIG. 1 is called "upper", and the lower side is called "lower".

The semiconductor device 1 shown in FIG. 1 has a so-called PACKAGE-ON-PACKAGE structure, which includes a through-electrode substrate 2 and a semiconductor package 3 mounted thereon.

The through electrode substrate 2 includes: an insulating layer 21; a plurality of through wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21; a semiconductor wafer 23 embedded in the insulating layer 21; and a lower wiring layer 24 provided on The lower surface of the insulating layer 21; the upper wiring layer 25, which is provided on the upper surface of the insulating layer 21; and the solder bump 26, which is provided on the lower surface of the lower layer wiring layer 24.

The semiconductor package 3 includes: a package substrate 31; a semiconductor wafer 32 mounted on the package substrate 31; a bonding wire 33 that electrically connects the semiconductor wafer 32 and the package substrate 31; a sealing layer 34 in which a semiconductor is embedded The wafer 32 or the bonding wire 33; the solder bump 35, which is provided on the lower surface of the package substrate 31.

In addition, a semiconductor package 3 is laminated on the through electrode substrate 2. As a result, the solder bumps 35 of the semiconductor package 3 are electrically connected to the upper wiring layer 25 penetrating the electrode substrate 2.

In this type of semiconductor device 1, it is not necessary to use a thick substrate such as an organic substrate containing a core layer for the through-electrode substrate 2, and thus it is possible to easily achieve a low height. Therefore, it can also contribute to the miniaturization of the electronic device in which the semiconductor device 1 is built.

In addition, since the through electrode substrate 2 and the semiconductor package 3 having mutually different semiconductor wafers are stacked, the mounting density per unit area can be increased. Therefore, it is possible to achieve both miniaturization and high performance.

Hereinafter, the through electrode substrate 2 and the semiconductor package 3 will be described in further detail. The through-electrode substrate 2 shown in FIG. 2 includes a lower wiring layer 24 and an upper wiring layer 25 each including an insulating layer, a wiring layer, a through wiring, and the like. Thereby, the lower wiring layer 24 and the upper wiring layer 25 contain wiring inside or on the surface, and are electrically connected to each other via the through wiring 221 penetrating through the insulating layer 21.

The wiring layer included in the lower wiring layer 24 is connected to the semiconductor wafer 23 or the solder bump 26. Therefore, the lower wiring layer 24 functions as a redistribution layer of the semiconductor wafer 23, and the solder bump 26 functions as an external terminal of the semiconductor wafer 23.

As described above, the through wiring 221 shown in FIG. 2 is provided so as to penetrate the insulating layer 21. As a result, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the electrode substrate 2 and the semiconductor package 3 can be laminated and penetrated, so that the semiconductor device 1 can be highly functional.

The wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 or the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor wafer 23 and functions as a redistribution layer of the semiconductor wafer 23 and also functions as an interposer interposed between the semiconductor wafer 23 and the package substrate 31. The cured film of the photosensitive resin composition of this embodiment can be used for the insulating layer constituting the redistribution layer.

According to this embodiment, the semiconductor wafer 23 and the rewiring layer (upper wiring layer 25) provided on the surface of the semiconductor wafer 23 are provided, and the insulating layer in the rewiring layer can be hardened by the photosensitive resin composition of this embodiment Semiconductor device.

By penetrating the wiring layer 221 through the insulating layer 21, the effect of reinforcing the insulating layer 21 can be obtained. Therefore, even when the mechanical strength of the lower wiring layer 24 or the upper wiring layer 25 is low, it is possible to avoid a decrease in the mechanical strength penetrating the entire electrode substrate 2. As a result, the lower wiring layer 24 or the upper wiring layer 25 can be further thinned, and the semiconductor device 1 can be further reduced in height.

Furthermore, the semiconductor device 1 shown in FIG. 1 includes, in addition to the through wiring 221, a through wiring 222 provided so as to penetrate the insulating layer 21 located on the upper surface of the semiconductor wafer 23. Thereby, the upper surface of the semiconductor wafer 23 and the upper wiring layer 25 can be electrically connected.

The insulating layer 21 is provided so as to cover the semiconductor wafer 23. Thereby, the effect of protecting the semiconductor wafer 23 can be improved. As a result, the reliability of the semiconductor device 1 can be improved. In addition, a semiconductor device 1 that can be easily applied to a mounting method such as the stacked package structure of this embodiment can be obtained.

The diameter W of the through wiring 221 (see FIG. 2) is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. This can ensure the conductivity of the through wiring 221 without impairing the mechanical properties of the insulating layer 21.

The semiconductor package 3 shown in FIG. 1 can be any form of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Side Package) Flat leadless package; Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Flame BGA) and other forms.

The arrangement of the semiconductor wafer 32 is not particularly limited, and as an example, a plurality of semiconductor wafers 32 are stacked in FIG. 1. As a result, the mounting density is increased. In addition, the plurality of semiconductor wafers 32 may be juxtaposed in the plane direction, or may be stacked in the thickness direction and juxtaposed in the plane direction.

The package substrate 31 may be any substrate, and for example, a substrate including an insulating layer, a wiring layer, a through wiring, and the like (not shown). Among them, the solder bump 35 and the bonding wire 33 can be electrically connected via the through wiring.

The sealing layer 34 is made of a well-known sealing resin material, for example. By providing such a sealing layer 34, the semiconductor chip 32 or the bonding wire 33 can be protected from external forces or external environment.

In addition, the semiconductor wafer 23 included in the through-electrode substrate 2 and the semiconductor wafer 32 included in the semiconductor package 3 are arranged close to each other, and therefore can enjoy advantages such as higher speed and lower loss of mutual communication. From this viewpoint, for example, if one of the semiconductor wafer 23 and the semiconductor wafer 32 is a CPU (Central Processing Unit), GPU (Graphics Processing Unit), AP (Application Processor), or the like, and the other If it is set to DRAM (Dynamic Random Access Memory) or flash memory and other memory elements, then these elements can be placed close to each other in the same device. With this, it is possible to realize a semiconductor device 1 that combines high functionality and miniaturization.

<Manufacturing method of semiconductor device> Next, a method of manufacturing the semiconductor device 1 shown in FIG. 1 will be described.

FIG. 3 is a process diagram showing a method of manufacturing the semiconductor device 1 shown in FIG. 4 to 6 are diagrams for explaining the method of manufacturing the semiconductor device 1 shown in FIG. 1.

The manufacturing method of the semiconductor device 1 has the following steps: a wafer disposition step S1, an insulating layer 21 is obtained by embedding the semiconductor wafer 23 and the through wirings 221, 222 provided on the substrate 202; an upper wiring layer forming step S2, the insulating The upper wiring layer 25 is formed on the layer 21 and the semiconductor wafer 23; the substrate peeling step S3, the substrate 202 is peeled; the lower wiring layer forming step S4, the lower wiring layer 24 is formed; the solder bump forming step S5, the solder bump 26 is formed and obtained Penetrating electrode substrate 2; stacking step S6, a semiconductor package 3 is laminated on the penetrating electrode substrate 2.

Among them, the upper wiring layer forming step S2 includes the following steps: a first resin film arranging step S20, a photosensitive resin varnish 5 (varnish-like photosensitive resin composition) is arranged on the insulating layer 21 and the semiconductor wafer 23 to obtain a photosensitive Photosensitive resin layer 2510; first exposure step S21, exposure processing is performed on the photosensitive resin layer 2510; first development step S22, development processing is performed on the photosensitive resin layer 2510; first curing step S23, implementation is performed on the photosensitive resin layer 2510 Hardening treatment; wiring layer forming step S24, forming a wiring layer 253; second resin film disposing step S25, disposing the photosensitive resin varnish 5 on the photosensitive resin layer 2510 and the wiring layer 253 to obtain the photosensitive resin layer 2520; second exposure Step S26, an exposure process is performed on the photosensitive resin layer 2520; a second development step S27, a development process is performed on the photosensitive resin layer 2520; a second curing step S28, a curing process is performed on the photosensitive resin layer 2520; a through wiring formation step S29 A through wiring 254 is formed in the opening 424 (through hole).

Hereinafter, each step will be described in order. In addition, the following manufacturing method is an example, and it is not limited to this.

[1] Wafer configuration step S1 First, as shown in FIG. 4(a), a wafer embedding structure including a substrate 202, a semiconductor wafer 23 and through wirings 221, 222 provided on the substrate 202, and an insulating layer 21 provided by embedding these is prepared体27.

The constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, and organic materials. In addition, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like can be used for the substrate 202.

The semiconductor wafer 23 is then attached to the substrate 202. In this manufacturing method, as an example, a plurality of semiconductor wafers 23 are separated from each other and provided on the same substrate 202 in parallel. The plurality of semiconductor wafers 23 may be of the same type or different types. In addition, the substrate 202 and the semiconductor wafer 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

In addition, if necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor wafer 23. The interposer functions as a redistribution layer of the semiconductor wafer 23, for example. Therefore, the interposer may include a pad (not shown) for electrically connecting to the electrode of the semiconductor wafer 23 described later. Thereby, the pad interval or arrangement pattern of the semiconductor wafer 23 can be changed, and the design freedom of the semiconductor device 1 can be further improved.

As such an interposer, for example, an inorganic substrate such as a silicon substrate, a ceramic substrate, a glass substrate, or an organic substrate such as a resin substrate can be used.

The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin listed as a component of the photosensitive resin composition, or may be a general sealing material used in the technical field of semiconductors.

Examples of the constituent materials of the through wirings 221 and 222 include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like.

In addition, a wafer embedded structure 27 produced by a method different from the above can be prepared.

[2] Upper wiring layer forming step S2 Next, an upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor wafer 23.

[2-1] First resin film placement step S20 First, as shown in FIG. 4( b ), the photosensitive resin varnish 5 is applied (arranged) on the insulating layer 21 and the semiconductor wafer 23. Thereby, as shown in FIG. 4( c ), a liquid film of the photosensitive resin varnish 5 can be obtained. The photosensitive resin varnish 5 is a photosensitive resin composition of this embodiment and is a photosensitive varnish.

The photosensitive resin varnish 5 is applied using, for example, a spin coater, a bar coater, a spraying device, an inkjet device, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, and is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the aforementioned range, a thinner photosensitive resin layer 2510 can be formed (see FIG. 4(d)). As a result, the upper wiring layer 25 can be made thinner, and the semiconductor device 1 can be made thinner easily.

In addition, the viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone-plate type viscometer (TV-25, manufactured by Nippon Toki Industries) under the condition of a rotation speed of 100 rpm.

Next, the liquid coating of the photosensitive resin varnish 5 is dried. Thereby, the photosensitive resin layer 2510 shown in FIG. 4(d) is obtained.

The drying conditions of the photosensitive resin varnish 5 are not particularly limited, and examples thereof include heating at a temperature of 80 to 150° C. for 1 to 60 minutes.

In this step, instead of the procedure of applying the photosensitive resin varnish 5, the following procedure may be adopted: a photosensitive resin film formed by forming the photosensitive resin varnish 5 into a film is arranged. The photosensitive resin film is the photosensitive resin composition of this embodiment, and is a photosensitive resin film.

For example, the photosensitive resin varnish 5 is coated on a substrate such as a carrier film by various coating devices, and then, the obtained coating film is dried to manufacture a photosensitive resin film.

After the photosensitive resin layer 2510 is formed in this manner, the photosensitive resin layer 2510 is subjected to a heat treatment before exposure as necessary. By performing pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 are stabilized, whereby the reaction in the first exposure step S21 described later can be stabilized. On the other hand, by heating under the heating conditions described below, the adverse effects on the photoacid generator due to heating can be minimized.

The temperature of the heat treatment before exposure is preferably 70 to 130°C, more preferably 75 to 120°C, and still more preferably 80 to 110°C. If the temperature of the heat treatment before exposure is lower than the above lower limit, there is a possibility that the goal of stabilizing molecules by the heat treatment before exposure may not be achieved. On the other hand, if the temperature of the heat treatment before exposure is greater than the above upper limit, there is a risk that the processing accuracy of pattern formation will be reduced due to the influence of a wide range as follows. This effect is that the activity of the photoacid generator becomes too active and even In the first exposure step S21 to be described later, it is also difficult for the acid to be generated by the irradiation light.

The time of the heat treatment before exposure is appropriately set according to the temperature of the heat treatment before exposure. At the aforementioned temperature, it is preferably 1 to 10 minutes, more preferably 2 to 8 minutes, and still more preferably 3 to 6 minutes. If the time of the heat treatment before exposure is less than the aforementioned lower limit, there is a possibility that the purpose of stabilizing molecules by the heat treatment before exposure may not be achieved due to insufficient heating time. On the other hand, if the time of the heat treatment before exposure is longer than the upper limit, the heating time is too long, and even if the temperature of the heat treatment before exposure is controlled within the aforementioned range, the effect of the photoacid generator may be hindered. .

In addition, the environment of the heat treatment is not particularly limited, and it may be an inert gas environment, a reducing gas environment, or the like, but it is set to an atmospheric environment in consideration of work efficiency and the like.

In addition, the ambient pressure is not particularly limited, and may be under reduced pressure or under pressure, but it is set to normal pressure in consideration of work efficiency and the like. In addition, the normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-2] First exposure step S21 Next, the photosensitive resin layer 2510 is exposed to light.

First, as shown in FIG. 4( d ), the mask 412 is arranged in a specific area on the photosensitive resin layer 2510. In addition, light (active radiation) is irradiated through the mask 412. As a result, the photosensitive resin layer 2510 is exposed to light according to the pattern of the mask 412.

In addition, in FIG. 4( d ), the case where the photosensitive resin layer 2510 has a so-called negative type sensitivity is shown. In this example, in the photosensitive resin layer 2510, the region corresponding to the light shielding portion of the mask 412 is given solubility in the developing solution.

On the other hand, in the region corresponding to the penetrating portion of the mask 412, for example, acid is generated by the action of the photosensitizer. The generated acid acts as a catalyst for the reaction of the thermosetting resin in the steps described below.

The amount of exposure in the exposure process is not particularly limited, but it is preferably 100 to 2000 mJ/cm ² , and more preferably 200 to 1000 mJ/cm ² . This can suppress underexposure and overexposure in the photosensitive resin layer 2510. As a result, eventually high pattern forming accuracy can be achieved. Thereafter, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment as necessary.

The temperature of the heat treatment after exposure is not particularly limited, but it is preferably 50 to 150°C, more preferably 50 to 130°C, still more preferably 55 to 120°C, and particularly preferably 60 to 110 ℃. By performing post-exposure heat treatment at this temperature, the catalyst action of the generated acid is sufficiently enhanced, so that the thermosetting resin can fully react in a shorter time. By setting the temperature within this range, it is possible to suppress a decrease in processing accuracy of pattern formation due to the acceleration of acid diffusion.

In addition, by setting the temperature of the heat treatment after exposure to the aforementioned lower limit or more, the reaction rate of the thermosetting resin can be improved, and the productivity can be improved. On the other hand, by setting the temperature of the heat treatment after exposure to the aforementioned upper limit value or less, it is possible to suppress a decrease in the processing accuracy of pattern formation due to the acceleration of acid diffusion.

On the other hand, the post-exposure heat treatment time is appropriately set according to the post-exposure heat treatment temperature, but among the aforementioned temperatures, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, and still more preferably Set to 3 to 15 minutes. By performing the post-exposure heat treatment at such a time, the thermosetting resin can be sufficiently reacted, and the diffusion of acid can be suppressed, so that the processing accuracy of pattern formation can be suppressed from being lowered.

In addition, the environment of the heat treatment after exposure is not particularly limited, and it may be an inert gas environment or a reducing gas environment, etc., but it is set to an atmospheric environment in consideration of work efficiency and the like.

In addition, the ambient pressure of the heat treatment after exposure is not particularly limited, and it may be under reduced pressure or under pressure, but it is set to normal pressure in consideration of work efficiency and the like. With this, the pre-exposure heat treatment can be easily performed. In addition, the normal pressure refers to a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-3] First developing step S22 Next, the photosensitive resin layer 2510 is subjected to development processing. As a result, an opening 423 penetrating the photosensitive resin layer 2510 is formed in a region corresponding to the light-shielding portion of the mask 412 (see FIG. 5( e )). Examples of the developer include organic developer and water-soluble developer.

[2-4] First hardening step S23 After the development process, the photosensitive resin layer 2510 is subjected to a curing process (post-development heat treatment). The conditions of the hardening treatment are not particularly limited, and the heating temperature is about 160 to 250° C., and the heating time is about 30 to 240 minutes. With this, it is possible to suppress the thermal influence on the semiconductor wafer 23 and harden the photosensitive resin layer 2510 to obtain the organic insulating layer 251.

[2-5] Wiring layer formation step S24 Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5(f)). The wiring layer 253 is formed by patterning by a photolithography method and an etching method after obtaining a metal layer by a vapor deposition method such as a sputtering method or a vacuum evaporation method.

In addition, surface modification treatment such as plasma treatment may be performed before forming the wiring layer 253.

[2-6] Second resin film placement step S25 Next, as shown in FIG. 5( g ), a photosensitive resin layer 2520 is obtained in the same manner as in the first resin film placement step S20. The photosensitive resin layer 2520 is arranged so as to cover the wiring layer 253.

Thereafter, if necessary, the photosensitive resin layer 2520 is subjected to a pre-exposure heat treatment. The processing conditions are, for example, the conditions described in the first resin film placement step S20.

[2-7] Second exposure step S26 Next, the photosensitive resin layer 2520 is exposed to light. The processing conditions are, for example, the conditions described in the first exposure step S21.

Thereafter, the photosensitive resin layer 2520 is subjected to post-exposure heat treatment as required. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second development step S27 Next, the photosensitive resin layer 2520 is subjected to development processing. The processing conditions are, for example, the conditions described in the first development step S22. With this, the opening 424 penetrating through the photosensitive resin layers 2510 and 2520 is formed (see FIG. 5(h)).

[2-9] Second hardening step S28 After the development process, the photosensitive resin layer 2520 is subjected to a curing process (heating process after development). The curing conditions are, for example, the conditions described in the first curing step S23. With this, the photosensitive resin layer 2520 is hardened to obtain an organic insulating layer 252 (see FIG. 6(i)).

In the present embodiment, the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252, but it may have three or more layers. In this case, a series of steps from the wiring layer formation step S24 to the second hardening step S28 may be repeatedly added after the second hardening step S28.

[2-10] Through-wiring formation step S29 Next, a through wiring 254 shown in FIG. 6(i) is formed in the opening 424.

A well-known method is used for formation of the through wiring 254, for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 252. The seed layer is formed on the inner surface (side surface and bottom surface) of the opening 424 and on the upper surface of the organic insulating layer 252.

As the seed layer, for example, a copper seed layer is used. In addition, the seed layer is formed by sputtering, for example.

In addition, the seed layer may be composed of the same kind of metal as the through wiring 254 to be formed, or may be composed of a different kind of metal.

Next, in a seed layer (not shown), a resist layer (not shown) is formed on a region other than the opening 424. Furthermore, using the resist layer as a mask, the opening 424 is filled with metal. For the filling, for example, an electroplating method can be used. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like. In this way, the conductive material is buried in the opening 424 to form the through wiring 254.

Next, the resist layer (not shown) is removed. Furthermore, the seed layer (not shown) on the organic insulating layer 252 is removed. At this time, for example, a flash etching method can be used. In addition, the formation location of the through wiring 254 is not limited to the position shown in the figure.

[3] Substrate peeling step S3 Next, as shown in FIG. 6(j), the substrate 202 is peeled off. Thereby, the lower surface of the insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4 Next, as shown in FIG. 6( k ), the lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. The lower wiring layer 24 can be formed by any method, for example, in the same manner as the above upper wiring layer forming step S2.

The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 via the through wiring 221.

[5] Solder bump forming step S5 Next, as shown in FIG. 6(L), solder bumps 26 are formed on the lower wiring layer 24. In addition, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 or the lower wiring layer 24 as necessary. As above, the through electrode substrate 2 is obtained.

In addition, the through electrode substrate 2 as shown in FIG. 6(L) can be divided into a plurality of regions. Therefore, for example, by singulating the penetrating electrode substrate 2 along a dotted line shown in FIG. 6(L), a plurality of penetrating electrode substrates 2 can be efficiently manufactured. In addition, for example, a diamond cutter or the like can be used for singulation.

[6] Stacking step S6 Next, the semiconductor package 3 is arranged on the singulated through-electrode substrate 2. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

This method of manufacturing a semiconductor device 1 can be applied to a wafer-level process or a panel-level process using a large-area substrate. With this, the manufacturing efficiency of the semiconductor device 1 can be improved, and the cost can be reduced.

<Modified example of semiconductor device> Next, a modification of the semiconductor device of the embodiment will be described.

(First modification) First, the first modification will be described. 7 is a partially enlarged cross-sectional view showing a first modification of the semiconductor device of the embodiment. Hereinafter, the first modification will be described, but in the following description, differences from the embodiments shown in FIGS. 1 and 2 will be mainly described, and descriptions of the same matters will be omitted. In addition, about the same structure as FIG. 1 and FIG. 2, the same symbol is attached in FIG.

The semiconductor device 1A shown in FIG. 7 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except for the structure of the lower wiring layer. That is, the semiconductor device 1A shown in FIG. 7 includes: a semiconductor wafer 23 provided with pads 231; a lower wiring layer 24A; and solder bumps 26. The structure of the lower wiring layer 24A is different from the structure of the lower wiring layer 24 shown in FIGS. 1 and 2.

Specifically, the lower wiring layer 24A shown in FIG. 7 includes an organic insulating layer 240 provided on the lower surface of the semiconductor wafer 23 and an organic insulating layer 241 provided below the organic insulating layer 240. At least one of the organic insulating layers 240 and 241 is formed using a photosensitive resin composition for bump protection film. In addition, the lower surface of the semiconductor wafer 23 is covered with the organic insulating layers 240 and 241.

In addition, the lower wiring layer 24A shown in FIG. 7 includes a bump adhesion layer 245 that is electrically connected to both the pad 231 and the solder bump 26.

When manufacturing such a first modified example, by using the photosensitive resin composition for bump protection film, the pattern formation accuracy is high, and the deterioration of the metal contained in the pad 231 or the bump adhesion layer 245 can be suppressed. Therefore, the semiconductor device 1A with high reliability can be obtained.

(Second modification) Next, a second modification will be described. 8 is a partially enlarged cross-sectional view showing a second modification of the semiconductor device of the embodiment. Hereinafter, the second modification will be described, but in the following description, the differences from the embodiments shown in FIGS. 1 and 2 will be mainly described, and the description of the same matters will be omitted. In addition, about the same structure as FIG. 1 and FIG. 2, the same symbol is attached in FIG.

The semiconductor device 1B shown in FIG. 8 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except for the structure of the lower wiring layer. That is, the semiconductor device 1B shown in FIG. 8 includes: a semiconductor wafer 23 provided with pads 231; a lower wiring layer 24B; and solder bumps 26. The structure of the lower wiring layer 24B is different from the structure of the lower wiring layer 24 shown in FIGS. 1 and 2.

Specifically, the lower wiring layer 24B shown in FIG. 8 includes: an organic insulating layer 240 provided on the lower surface of the semiconductor wafer 23; an organic insulating layer 241 provided below the organic insulating layer 240; and an organic insulating layer 242, It is disposed below the organic insulating layer 241. At least one of the organic insulating layers 240, 241, and 242 is formed using a photosensitive resin composition for bump protection film.

In addition, the lower wiring layer 24B shown in FIG. 8 includes a wiring layer 243 that is electrically connected to the pad 231 and a bump adhesion layer 245 that is electrically connected to both the wiring layer 243 and the solder bump 26. In addition, organic insulating layers 240 and 241 are interposed between the semiconductor wafer 23 and the wiring layer 243, and the lower surface of the wiring layer 243 is covered by the organic insulating layer 242.

When manufacturing this second modification, by using the photosensitive resin composition for bump protection film, the pattern formation accuracy is high, and the metal contained in the pad 231, the wiring layer 243, and the bump adhesion layer 245 can be suppressed Deterioration. Therefore, a highly reliable semiconductor device 1B can be obtained.

<Electronic device> The electronic device of this embodiment includes the aforementioned semiconductor device of this embodiment.

The electronic device of this embodiment is not particularly limited as long as it has such a semiconductor device. Examples include mobile phones, smart phones, tablet terminals, wearable terminals, personal computers, and other information devices, servers, and routers. Such as communication equipment, robots, industrial equipment such as machines, vehicle control computers, vehicle-mounted equipment such as car navigation systems, etc.

The present invention has been described above based on the illustrated embodiments, but the present invention is not limited to these.

For example, the method for manufacturing a semiconductor device of the present invention may be a step with any purpose added to the foregoing embodiments.

In addition, the photosensitive resin composition, the semiconductor device, and the electronic device of the present invention may be those in which any elements are added to the foregoing embodiments.

In addition to the semiconductor device, the photosensitive resin composition can be applied to, for example, MEMS (Micro Electro Mechanical Systems) or bump protection films of various sensors, liquid crystal display devices, and bumps of display devices such as organic EL devices. Protective film, etc.

In addition, the form of the package of the semiconductor device is not limited to the illustrated form, and may be any form. [Example]

Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to the description of these examples.

(Preparation of photosensitive resin composition) The raw materials of the ingredients blended according to Table 1 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to obtain a mixed solution. Thereafter, the mixed solution was filtered with a 0.2 μm polypropylene filter, thereby obtaining a varnish-like photosensitive resin composition having a viscosity of about 100 cP at 25°C. The viscosity of the photosensitive resin composition was measured using a cone-plate type viscometer (TV-25, manufactured by Toki Industries, Japan) at a rotation speed of 100 rpm.

The details of the raw materials of each component in Table 1 are as follows. (Epoxy resin) ・Epoxy resin 1: Multifunctional epoxy resin represented by the following structure (EPPN201 manufactured by Nippon Kayaku Co., Ltd., phenol novolac epoxy resin, solid at 25°C, n=about 5)

(Phenoxy resin) ・Phenoxy resin 1: Bisphenol A phenoxy resin (jER1256, manufactured by Mitsubishi Chemical Corporation, Mw: about 50,000) ・Phenoxy resin 2: Bisphenol A type/F type phenoxy resin (YP-70, manufactured by Nippon Steel Chemical Materials Co., Ltd., Mw: about 50,000 to 60,000)

(Phenol resin) ・Phenol resin 1: Novolac type phenol resin represented by the following structure (PR-51470, manufactured by Sumitomo Bakelite Co., Ltd.)

(Photoacid generator) ・Photoacid generator 1: triarylsulfonium borate salt (manufactured by San-Apro Ltd., CPI-310B)

(Surfactant) ・Surfactant 1: oligomer containing fluorine group and lipophilic group (R-41, manufactured by DIC Corporation)

(Silane coupling agent) ・Silane coupling agent 1: 3-glycidoxypropyltrimethoxysilane (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.)

[Table 1]

The obtained photosensitive resin composition was evaluated based on the following evaluation items.

<Evaluation of pattern formability> Using a spin coater, the obtained photosensitive resin composition was coated on an 8-inch silicon wafer. After coating, the film was prebaked at 120° C. for 3 minutes using a hot plate in the atmosphere to obtain a coating film having a film thickness of about 9.0 μm. A mask made by TOPPAN PRINTING CO., LTD. (with a retention pattern and a punching pattern with a width of 1.0 to 100 μm is drawn) irradiated i-rays to the coating film. An i-ray stepper (manufactured by Nikon Corporation, NSR-4425i) was used for the irradiation, and irradiation was performed under the following conditions: the focus value was the best focus, and the via pattern with the exposure amount of 10 μm in the film thickness direction The central part (in the case of a film thickness of 9 μm, the film thickness is 4.5 μm in height) has an opening width of 10 μm±0.2 μm for the exposure amount of the opening. After the exposure, the wafer was placed on a hot plate and baked in the atmosphere at 70°C for 5 minutes. Thereafter, PGMEA was used as a developing solution, and spray development was performed for 30 seconds to dissolve and remove the unexposed portion. Thereafter, the cross-section of the through-hole pattern with a width of 100 μm on the obtained coating film sample was observed with a desktop SEM, and the angle (°) of the cone angle was measured to evaluate the pattern shape. The angle formed by the bottom surface of the coating film and the side surface in the opening of the coating film is defined as the taper angle. Table 1 shows the evaluation results. Evaluation criteria for pattern formability: ×: The angle of the cone angle is less than 85° 〇: The angle of the cone angle is 85～90° ×: The angle of the cone angle exceeds 90°

<Evaluation of heat-resistant reliability> (Production of test piece for evaluation) • Production of cured film (1) Using a spin coater, apply the obtained photosensitive resin composition on a silicon wafer with an 8-inch diameter to The film thickness after drying was made 10 micrometers, and it dried at 120 degreeC for 3 minutes in the atmosphere, thereby forming the photosensitive resin film. (2) The photosensitive resin film obtained in the above (1) was exposed to the entire surface at 800 mJ/cm ² using a manual exposure machine (manufactured by Aoke Manufacturing Co., Ltd., HMW-201GX). Next, the substrate was exposed to air in a hot plate at 70° C. for 5 minutes, and then heated. (3) After the above (2), PGMEA was used as a developing solution, spray development was performed at 3000 rpm and 15 seconds, and then the developing solution was removed from the surface of the photosensitive resin film at 3000 rpm and 15 seconds. (4) After the above (3), the photosensitive resin film is cured by a heat treatment at 170° C. for 180 minutes in a nitrogen environment, thereby obtaining a cured film. (5) Using a hot and cold impact device (manufactured by ESPEC Corp., TSA-72EH-W), the silicon wafer with a hardened film of (4) above was treated as follows: it will be kept at -65°C for 30 minutes/at 150°C Keep the 30-minute cycle as one cycle, and perform 200 cycles of TCT (Thermal Cycle Test) (TCT treatment). (6) After the above (4), immersed in 2% hydrofluoric acid, peeled off the film-like cured film from the silicon wafer, and dried the cured film overnight, thereby obtaining the cured film A. On the other hand, after (5) above, it was immersed in 2% hydrofluoric acid, the film-like cured film was peeled from the silicon wafer, and the cured film was dried overnight to obtain a cured film C. (7) Using 100 mg of the cured film A and the cured film C obtained in (6) above, respectively, and exposed to an environment of 85° C. and 85% for 12 hours (exposure treatment), thereby obtaining a cured film B and a cured film D. Comparing the cured films A and B obtained in the above <Preparation of Cured Films>, or comparing the cured films C and D, the water absorption rate after curing and the water absorption rate (%) after TCT were calculated based on the weight change before and after the exposure treatment.

The "water absorption rate after hardening" and "water absorption rate after TCT" in Table 1 were calculated based on the following formula. (Water absorption after hardening) "Water absorption rate after hardening" (%) = (B-A)/A×100 A: The weight of the cured film A obtained in (6) above without performing TCT treatment on the cured film obtained in (4) above B: The weight of the cured film B obtained in the above (7) by exposure treatment of the cured film A

(Water absorption rate after TCT) "Water absorption rate after TCT" (%) = (D-C)/C×100 C: Weight of the cured film C obtained in (6) above by performing TCT treatment on the cured film obtained in (4) above D: The weight of the cured film D obtained in the above (7) by subjecting the cured film C to exposure treatment

Next, the measured "water absorption after hardening" and "water absorption after TCT" were evaluated according to the following evaluation criteria. Table 1 shows the evaluation results. Evaluation criteria for heat resistance reliability: 〇: The difference between the water absorption after hardening and the water absorption after TCT is 1% or less ×: The difference between the water absorption after hardening and the water absorption after TCT exceeds 1%

It can be seen that the photosensitive resin compositions of Examples 1 and 2 are superior to Comparative Example 1 in heat resistance reliability, and compared with Comparative Example 2, the pattern formability (pattern shape) is good. Such photosensitive resin compositions of Examples 1 and 2 are preferable as negative photosensitive resin compositions such as insulating films for wiring layers.

This application claims the priority based on Japanese Application No. 2018-159354 filed on August 28, 2018, and incorporates the entire contents of its disclosure here.

1, 1A, 1B: Semiconductor device 2: through electrode substrate 3: Semiconductor packaging 5: photosensitive resin varnish 21: Insulation 23: Semiconductor chip 24, 24A, 24B: lower wiring layer 25: upper wiring layer 26: Solder bump 27: Structure 202: substrate 221, 222, 254: through wiring 231: Pad 240, 241, 242, 251, 252: organic insulating layer 245: bump adhesion layer 253: wiring layer 2510, 2520: photosensitive resin layer 31: Package substrate 32: Semiconductor chip 33: Bonding wire 34: Sealing layer 35: Solder bump 412: Mask 423, 424: opening

The above-mentioned object and other objects, features, and advantages are further clarified by the preferred embodiments described below and the following drawings attached thereto.

FIG. 1 is a longitudinal cross-sectional view showing an example of the configuration of a semiconductor device of this embodiment. FIG. 2 is a partially enlarged view of the area surrounded by the chain line of FIG. 1. FIG. 3 is a process diagram showing a method of manufacturing the semiconductor device shown in FIG. 4 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. FIG. 5 is a diagram for explaining the method of manufacturing the semiconductor device shown in FIG. 1. 6 is a diagram for explaining a method of manufacturing the semiconductor device shown in FIG. 7 is a partially enlarged cross-sectional view showing a first modification of the semiconductor device of the embodiment. 8 is a partially enlarged cross-sectional view showing a second modification of the semiconductor device of the embodiment.

1: Semiconductor device

2: through electrode substrate

3: Semiconductor packaging

21: Insulation

23: Semiconductor chip

24: Lower wiring layer

25: upper wiring layer

26: Solder bump

221: Through wiring

222: through wiring

253: wiring layer

31: Package substrate

32: Semiconductor chip

33: bonding wire

34: Sealing layer

35: Solder bump

Claims (10)

A negative photosensitive resin composition, which is a negative photosensitive resin composition for film formation, which contains: Epoxy resin, Phenoxy resin, and Photoacid generator. The negative photosensitive resin composition as claimed in item 1 of the patent application, wherein the weight average molecular weight of the phenoxy resin is 10,000 or more and 100,000 or less. The negative photosensitive resin composition according to item 1 of the patent application range, wherein the content of the phenoxy resin is 10 parts by mass or more and 60 parts by mass or less with respect to 100 parts by mass of the epoxy resin. The negative photosensitive resin composition as claimed in item 1 of the patent scope, wherein the viscosity of the negative photosensitive resin composition at 25° C. is 10 cP or more and 6000 cP or less. The negative photosensitive resin composition as claimed in item 1 of the patent application, wherein the epoxy resin contains a multifunctional epoxy resin, and the multifunctional epoxy resin has three or more epoxy groups in the molecule. For example, the negative photosensitive resin composition according to item 1 of the patent application scope contains a surfactant. For example, the negative photosensitive resin composition according to item 1 of the patent application scope contains an adhesion aid. For example, the negative photosensitive resin composition according to item 1 of the patent application scope contains a solvent. As in the negative photosensitive resin composition according to any one of claims 1 to 8, the cured film of the negative photosensitive resin composition is used to constitute the insulating layer of the redistribution layer. A semiconductor device including: Semiconductor chips, and A redistribution layer provided on the surface of the semiconductor wafer, In addition, the insulating layer in the redistribution layer is composed of the cured product of the negative photosensitive resin composition according to any one of claims 1 to 9 of the patent application.

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