JP2019062016A - Method for manufacturing semiconductor device - Google Patents

Abstract

To provide a manufacturing method capable of manufacturing a semiconductor device including a resin film with less void.SOLUTION: A method for manufacturing a semiconductor device comprises: a chip arrangement step of arranging a semiconductor chip on a substrate; a film arrangement step of arranging a photosensitive resin film so as to embed the semiconductor chip while melting the photosensitive resin film after the chip arrangement step; a heating step of obtaining a photosensitive resin layer by subjecting the photosensitive resin film to heat treatment so that a melt viscosity of the photosensitive resin film becomes 5 Pa s or lower after the film arrangement step; an exposure step of subjecting the photosensitive resin layer to exposure processing after the heating step; and a development step of subjecting the photosensitive resin layer to development processing after the exposure step.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a method of manufacturing a semiconductor device.

  For the semiconductor element, a resin film made of a resin material is used for applications such as a protective film, an interlayer insulating film, and a planarization film. Further, depending on the mounting method of the semiconductor element, thickening of these resin films is required. However, when the resin film is thickened, warpage of the semiconductor chip tends to occur.

  On the other hand, there is known a technique of forming a pattern on a resin film by imparting photosensitivity and light transparency to the resin film. Thereby, the target pattern can be formed with high accuracy.

  Then, development of the resin composition which can manufacture the resin film which has photosensitivity and can be thickened is furthered.

  For example, Patent Document 1 discloses a photosensitive resin composition which is excellent in light transmittance and can suppress warpage of a semiconductor chip by optimizing the molecular structure and reducing the residual stress. The photosensitive resin composition is in the form of a liquid, is applied onto a substrate by spin coating, and is then dried and subjected to exposure processing and development processing. Thereby, patterning corresponding to the exposure pattern is performed.

JP 2003-209104 A

  Moreover, it replaces with the photosensitive resin composition which makes a liquid, and what shape | molded the photosensitive resin composition in the shape of a film is used. Such films are provided on a substrate by lamination.

  On the other hand, in the laminating method, air between the adherend and the film is less likely to be released, so that air inclusion called void is likely to occur. In particular, when the film is laminated so as to embed the semiconductor chip, voids are easily generated at the interface with the semiconductor chip. Such voids are required to be eliminated as much as possible because they will deteriorate the properties of the resin film.

  An object of the present invention is to provide a method of manufacturing a semiconductor device capable of manufacturing a semiconductor device having a resin film with few voids.

Such an object is achieved by the present invention of the following (1) to (6).
(1) a chip disposing step of disposing a semiconductor chip on a substrate;
A film disposing step of disposing the photosensitive resin film so as to embed the semiconductor chip while melting the photosensitive resin film after the chip disposing step;
After the film disposing step, the photosensitive resin film is subjected to a heat treatment so as to have a melt viscosity of 5 Pa · s or less to obtain a photosensitive resin layer,
An exposure step of exposing the photosensitive resin layer after the heating step;
A development step of developing the photosensitive resin layer after the exposure step;
A method of manufacturing a semiconductor device, comprising:

  (2) The manufacturing method of the semiconductor device as described in said (1) whose temperature of the said heat processing in the said heating process is 85-115 degreeC.

  (3) The method of manufacturing a semiconductor device according to (1) or (2), wherein a pressure of the heat treatment in the heating step is normal pressure.

  (4) The method of manufacturing a semiconductor device according to any one of (1) to (3), wherein an atmosphere of the heat treatment in the heating step is an inert gas atmosphere.

(5) The film disposing step is a step of pressing the photosensitive resin film laminated on a carrier film against the semiconductor chip,
The method for manufacturing a semiconductor device according to any one of (1) to (4), wherein the heating step includes a process of peeling the carrier film from the photosensitive resin film before the heat treatment.

  (6) The manufacturing method of the semiconductor device in any one of said (1) thru | or (5) whose thickness of the said photosensitive resin film is 100-1000 micrometers.

  According to the present invention, a semiconductor device provided with a resin film with few voids can be manufactured.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device manufactured by embodiment of the manufacturing method of the semiconductor device of this invention. It is the elements on larger scale of the area | region enclosed by the chain line of FIG. It is a figure which shows the method to manufacture the semiconductor device shown in FIG. It is a figure which shows the method to manufacture the semiconductor device shown in FIG. It is a figure which shows the method to manufacture the semiconductor device shown in FIG. An example of the melt viscosity curve of a photosensitive resin film is shown. It is a figure which shows the manufacturing method of the semiconductor device concerning a modification. It is a figure which shows the manufacturing method of the semiconductor device concerning a modification.

  Hereinafter, the method for manufacturing a semiconductor device of the present invention will be described in detail based on the preferred embodiments shown in the attached drawings.

<Semiconductor device>
First, an example of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment described later will be described.

  FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured by the embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 2 is a partially enlarged view of a region surrounded by a dashed line in FIG. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side as “lower”.

  A semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

  Among them, the through electrode substrate 2 includes an organic insulating layer 21 (resin film), a plurality of through wires 22 penetrating the upper surface to the lower surface of the organic insulating layer 21, and a semiconductor chip 23 embedded in the organic insulating layer 21. A lower wiring layer 24 provided on the lower surface of the organic insulating layer 21, an upper wiring layer 25 provided on the upper surface of the organic insulating layer 21, and a solder bump 26 provided on the lower surface of the lower wiring layer 24; Have.

  The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, a bonding wire 33 for electrically connecting the semiconductor chip 32 and the package substrate 31, a semiconductor chip 32 and a bonding wire. A sealing layer 34 in which 33 is embedded and solder bumps 35 provided on the lower surface of the package substrate 31 are provided.

  The semiconductor package 3 is stacked on the through electrode substrate 2. Thus, the solder bumps 35 of the semiconductor package 3 and the upper wiring layer 25 of the through electrode substrate 2 are electrically connected.

  In such a semiconductor device 1, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, the height can be easily reduced. For this reason, it can contribute also to size reduction of the electronic device which incorporates the semiconductor device 1.

  In addition, since the through electrode substrate 2 and the semiconductor package 3 having semiconductor chips different from each other are stacked, the mounting density per unit area can be increased. Therefore, it is possible to achieve both size reduction and high performance.

Hereinafter, the through electrode substrate 2 and the semiconductor package 3 will be described in more detail.
Lower layer wiring layer 24 and upper layer wiring layer 25 provided in through electrode substrate 2 shown in FIG. 2 each include an insulating layer, a wiring layer, a through wiring, and the like. Thereby, the lower interconnection layer 24 and the upper interconnection layer 25 include interconnections inside and on the surface, and mutual electrical connection is achieved through the through interconnections 22 penetrating the organic insulating layer 21.

  Among these, the wiring layer included in the lower layer wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26. Thus, the lower wiring layer 24 functions as a rewiring layer of the semiconductor chip 23, and the solder bumps 26 function as external terminals of the semiconductor chip 23.

  Further, as described above, the through wiring 22 shown in FIG. 2 is provided to penetrate the organic insulating layer 21. As a result, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through electrode substrate 2 and the semiconductor package 3 can be stacked. Therefore, the semiconductor device 1 can be highly functional. it can.

  Furthermore, the wiring layer included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 22 and the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23 and functions as a rewiring layer of the semiconductor chip 23 and as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works. As a result, the rewiring layer can be densified.

  Moreover, the effect of reinforcing the organic insulating layer 21 can be obtained by the through wiring 22 penetrating the organic insulating layer 21. Therefore, even when the mechanical strength of the lower wiring layer 24 and the upper wiring layer 25 is low, it is possible to avoid the reduction in the mechanical strength of the entire through electrode substrate 2. As a result, the thickness of the lower wiring layer 24 and the upper wiring layer 25 can be further reduced, and the height of the semiconductor device 1 can be further reduced.

  The through wiring 22 may be provided to penetrate, for example, the organic insulating layer 21 located on the upper surface of the semiconductor chip 23 in addition to the portion illustrated.

  Furthermore, the organic insulating layer 21 is provided to cover the semiconductor chip 23. Thereby, the effect of protecting the semiconductor chip 23 is enhanced. As a result, the reliability of the semiconductor device 1 can be improved. Moreover, the semiconductor device 1 which can be easily applied to the mounting method like the package on package structure which concerns on this embodiment is obtained.

  The diameter W (see FIG. 2) of the through wiring 22 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. Thereby, the conductivity of the through wiring 22 can be secured without impairing the mechanical properties of the organic insulating layer 21.

  The semiconductor package 3 shown in FIG. 1 may be any type of package. For example, Quad Flat Package (QFP), Small Outline Package (SOP), Ball Grid Array (BGA), Chip Size Package (CSP), Quad Flat Non-Leaded Package (QFN), Small Outline Non-leaded Package (SON), The form of LF-BGA (Lead Flame BGA) etc. is mentioned.

  The arrangement of the semiconductor chips 32 is not particularly limited, but as an example in FIG. 1, a plurality of semiconductor chips 32 are stacked. Thereby, the mounting density is increased. The plurality of semiconductor chips 32 may be juxtaposed in the planar direction, or may be juxtaposed in the planar direction while being stacked in the thickness direction.

  The package substrate 31 may be any substrate, and is, for example, a substrate including an insulating layer, a wiring layer, a through wiring, and the like (not shown). Among these, the solder bump 35 and the bonding wire 33 can be electrically connected through the through wiring.

  The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wire 33 can be protected from external force and the external environment.

  In addition, since the semiconductor chip 23 included in the through electrode substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are disposed in proximity to each other, it is possible to enjoy advantages such as speeding up and reduction in mutual communication. Can. From this point of view, for example, one of the semiconductor chip 23 and the semiconductor chip 32 is an arithmetic element such as a central processing unit (CPU), a graphics processing unit (GPU), or an application processor (AP), and the other is a dynamic random access (DRAM) In the case of a storage element or the like such as a memory or a flash memory, these elements can be arranged close to each other in the same device. As a result, it is possible to realize the semiconductor device 1 in which high functionalization and miniaturization are compatible.

<Method of Manufacturing Semiconductor Device>
Next, a method of manufacturing the semiconductor device 1 (a method of manufacturing the semiconductor device according to the embodiment) will be described.

3 to 5 are views showing a method of manufacturing the semiconductor device 1 shown in FIG.
In the method of manufacturing the semiconductor device 1, the photosensitive resin film is formed so as to embed the semiconductor chip 23 while melting the photosensitive resin film 20 after the chip arranging step of arranging the semiconductor chip 23 on the substrate 202 and the chip arranging step. After the film disposing step, the photosensitive resin film 20 is subjected to heat treatment so that the melt viscosity of the photosensitive resin film 20 becomes 5 Pa · s or less, and the photosensitive resin layer 210 is obtained. It has an exposure process of subjecting the resin layer 210 to an exposure process, and a development process of subjecting the photosensitive resin layer 210 to a development process.

  In addition to the above steps, the method of manufacturing the semiconductor device 1 further includes a through wiring forming step of forming the through wiring 22, an upper wiring layer forming step of forming the upper wiring layer 25, and a lower layer forming the lower wiring layer 24. A wiring layer forming step, a solder bump forming step of forming the solder bumps 26, and a laminating step of laminating the semiconductor package 3 on the through electrode substrate 2 are included.

The respective steps will be sequentially described below.
[1] Chip Arrangement Step First, as shown in FIG. 3A, a substrate 202 is prepared.

  The constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials and the like. Further, as the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used.

  Next, as shown in FIG. 3B, the semiconductor chip 23 is disposed on the substrate 202. In this manufacturing method, as an example, a plurality of semiconductor chips 23 are provided on the same substrate 202 while being separated from each other. The plurality of semiconductor chips 23 may be of the same type as each other or may be of different types. Alternatively, the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

  Note that, if necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23. The interposer functions as, for example, a rewiring layer of the semiconductor chip 23. Therefore, the interposer may be provided with a pad (not shown) for electrically connecting with the electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and the arrangement pattern of the semiconductor chip 23 can be converted, and the design freedom of the semiconductor device 1 can be further enhanced.

  For example, a silicon substrate, a ceramic substrate, an inorganic substrate such as a glass substrate, an organic substrate such as a resin substrate, or the like is used for such an interposer.

[2] Film Arrangement Step Next, as shown in FIG. 3C, the photosensitive resin film 20 is arranged on the semiconductor chip 23. The photosensitive resin film 20 is a resin film having heat melting property and photosensitivity, which will be described in detail later.

  Next, the photosensitive resin film 20 is heated while being pressed downward. Thus, the photosensitive resin film 20 can be disposed so as to bury the semiconductor chip 23 as shown in FIG. 3D while melting the photosensitive resin film 20.

  When the photosensitive resin film 20 is disposed on the semiconductor chip 23, the photosensitive resin film 20 may be disposed alone, and the photosensitive resin film 20 laminated on the carrier film is pressed to the semiconductor chip 23. You may make it arrange | position so that it may be applied.

  In addition, a known laminating method may be used in this operation. In that case, for example, a vacuum laminator is used. The vacuum laminator may be a batch type or a continuous type. Specifically, using a heat plate which can be pressed with a predetermined pressure and heated to a predetermined temperature in the vacuum chamber, the photosensitive resin film 20 is applied to the adherend placed on the table. A method of pressing is used.

  Although the heating temperature at this time is suitably set according to the constituent material etc. of the photosensitive resin film 20, it is preferable that it is 40-150 degreeC as an example, and it is more preferable that it is 50-140 degreeC, and 60- More preferably, the temperature is 130 ° C. By heating at such a temperature, the embeddability of the semiconductor chip 23 in the photosensitive resin film 20 is improved, and the curing reaction of the photosensitive resin film 20 proceeds with the excessive heating, or the photosensitive resin layer It can suppress that the processability of 210 falls.

  Moreover, although heating time is suitably set according to heating temperature, it is preferable that it is 10 to 100 second as an example.

  The pressure is not particularly limited, but is preferably 0.2 to 5 MPa, and more preferably 0.4 to 1 MPa.

  In addition, when arranging photosensitive resin so that the semiconductor chip 23 may be embedded, the thickness of the photosensitive resin layer 210 obtained by the process mentioned later by using the photosensitive resin film 20 which film-forms the photosensitive resin composition. Film formation can be easily achieved. This enables the formation of the photosensitive resin layer 210 that can be easily embedded even in the semiconductor chip 23 having a large thickness. In addition, even in the case of achieving a thick film, an advantage is that it is easy to make the thickness of the photosensitive resin layer 210 uniform.

  In addition, in the laminating method, since the photosensitive resin film 20 is pressed by the heat plate, the contact surface of the heat plate can be easily flattened. For this reason, the photosensitive resin layer 210 obtained in the process to be described later has better planarization of the upper surface. Therefore, when the upper wiring layer 25 is further laminated on the upper surface of the photosensitive resin layer 210, many advantages can be obtained in terms of good workability, high precision of lamination position, and the like.

  In addition, although the photosensitive resin film 20 is manufactured by film-forming the varnish-like photosensitive resin composition, specifically, the photosensitive resin composition whose viscosity is adjusted with a solvent etc. Apply on the ground. Then, the photosensitive resin film 20 is obtained by drying the obtained coating film.

  As such a method, for example, a method of coating a varnish-like photosensitive resin composition on a carrier film using various coaters and drying the same, a varnish-like photosensitive resin using a spray device After spraying a composition on a carrier film, the method of drying this, etc. are mentioned. Among these, after applying a varnish-like photosensitive resin composition on a carrier film using various coater apparatuses, such as a bar coater, a die coater, a lip coater, the method of drying this is preferable. Thereby, the photosensitive resin film 20 which does not have a void and has the thickness of a uniform photosensitive resin layer can be manufactured efficiently.

  Although the content rate of the solvent in the photosensitive resin film 20 is not specifically limited, It is preferable that it is 10 mass% or less of the photosensitive resin film 20 whole. Thus, the tackiness of the photosensitive resin film 20 can be improved, and the curability of the photosensitive resin film 20 can be enhanced. In addition, the generation of voids due to the volatilization of the solvent can be suppressed.

  The drying conditions include, for example, heating at a temperature of 80 to 150 ° C. for 5 to 30 minutes.

  In addition, the photosensitive resin film 20 laminated | stacked on the carrier film is useful from a viewpoint of handleability, surface cleanability, etc. At this time, the carrier film may be in the form of a roll that can be wound, or may be in the form of a sheet.

  As a constituent material of a carrier film, a resin material, a metal material, etc. are mentioned, for example. Among these, as the resin material, for example, polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonates, silicones, fluorine resins, polyimide resins and the like can be mentioned. Moreover, as a metal material, copper or copper alloy, aluminum or aluminum alloy, iron or iron alloy etc. are mentioned, for example.

  Among these, a carrier film containing polyethylene terephthalate which is a kind of polyester is preferably used. Such a carrier film has relatively good peelability while suitably supporting the photosensitive resin film 20.

  Moreover, on the surface of the photosensitive resin film 20, a cover film may be provided as needed. The cover film protects the surface of the photosensitive resin film 20 until the bonding operation.

  The constituent material of the cover film is appropriately selected from those listed as constituent materials of the carrier film, but a cover film containing polyethylene terephthalate, which is a type of polyester, is preferably used from the viewpoints of protection and releasability.

[3] Heating Step Next, heat treatment is performed so that the melt viscosity of the photosensitive resin film 20 is 5 Pa · s or less. Thereby, the photosensitive resin layer 210 shown in FIG. 4 (e) is obtained.

  At this time, the photosensitive resin film 20 and the adherend (for example, the semiconductor chip 23, the substrate 202, etc.) are subjected to the heat treatment so that the photosensitive resin film 20 after the film disposing step has the above-described melt viscosity Or the air entrained inside the photosensitive resin film 20 can be effectively discharged. As a result, generation of voids (voids) due to the remaining of air is suppressed, and formation of a photosensitive resin layer 210 with few voids and high reliability is made possible.

  Specifically, when the heat treatment is performed so that the melt viscosity of the photosensitive resin film 20 falls within the above range, sufficient fluidity can be imparted to the photosensitive resin film 20, and the photosensitive resin film 20 is exposed accordingly. It becomes easy to form a path for discharging the air taken in on the surface and the inside of the resin film 20 to the outside. Therefore, the entrained air can be discharged efficiently.

  In addition, when melt viscosity exceeds the said upper limit, since the fluidity | liquidity of the photosensitive resin film 20 becomes inadequate, it becomes difficult to form the path | route for discharging | emitting air.

  The heat treatment is preferably performed so that the melt viscosity of the photosensitive resin film 20 is 4 Pa · s or less, and more preferably 3 Pa · s or less.

  On the other hand, the lower limit of the melt viscosity of the photosensitive resin film 20, which decreases with the heat treatment, is not particularly limited, but the shape as a film is easily maintained (does not flow out) or a sufficient film thickness is secured In consideration of ease of operation, it may be set to 0.2 Pa · s or more.

  By the way, applying the heat treatment so that the melt viscosity of the photosensitive resin film 20 is 5 Pa · s or less as described above means, for example, when the melt viscosity is measured under predetermined measurement conditions as described later, the melt viscosity While using the photosensitive resin film 20 which becomes 5 Pa.s or less, in this heating process, the process which heats the photosensitive resin film 20 at temperature higher than the melting start temperature is said applied. That is, when the melt viscosity in the present step is estimated based on the melt viscosity characteristic of the photosensitive resin film 20 obtained in advance, the heat treatment under the condition that the melt viscosity is estimated to be 5 Pa · s or less is also the present step. include.

The melt viscosity of the photosensitive resin film 20 is measured as follows.
First, a photosensitive resin film having a thickness of 150 μm is prepared.

  Next, using a visco-elasticity measuring apparatus ("MARS" manufactured by Thermo Fisher Scientific Co., Ltd.), parallel plate 20 mmφ, gap 0.05 mm, heating rate 5 ° C./min, frequency 0.1 Hz, temperature 30 to 150 ° C. Under the measurement conditions, the melt viscosity curve (the change curve of the melt viscosity with respect to temperature) of the photosensitive resin film is obtained.

  Then, the lowest viscosity in the obtained melt viscosity curve is taken as the melt viscosity of the photosensitive resin film 20.

  In the heat treatment of the photosensitive resin film 20, heating may be performed so that the melt viscosity falls within the above range, and the conditions are appropriately set according to the constituent material, thickness, and the like of the photosensitive resin film 20.

  As an example, the temperature of the heat treatment is preferably 85 to 115 ° C., and more preferably 90 to 110 ° C. By setting the temperature of the heat treatment within the above range, the melt viscosity of the photosensitive resin film 20 can be optimized, so that voids in the photosensitive resin film 20 can be more reliably removed, and It is possible to suppress the decrease in processability in the developing step described later.

  That is, if the temperature of the heat treatment is below the lower limit value, the melt viscosity may be out of the above range depending on the constituent material and thickness of the photosensitive resin film 20, and the removal of the voids is insufficient. May be On the other hand, if the temperature of the heat treatment exceeds the upper limit value, depending on the constituent material of the photosensitive resin film 20, there is a possibility that the photosensitive resin film 20 may be denatured or the like, and the processability in the developing step described later may be reduced. There is.

  The heat treatment time is properly adjusted depending on the temperature, but when the temperature is in the above range, it is preferably 1 to 180 minutes, more preferably 10 to 150 minutes, and 20 to 120 minutes. It is further preferred that By setting the time of the heat treatment within the above range, voids in the photosensitive resin film 20 can be more reliably removed, and a decrease in processability in a developing step described later can be suppressed.

  Further, the atmosphere for the heat treatment is not particularly limited, and may be an oxidizing gas atmosphere, a reducing gas atmosphere, or the like, but preferably an inert gas atmosphere. As a result, even when being subjected to relatively high temperature heat treatment or relatively long time heat treatment, it is possible to suppress deterioration of the semiconductor chip 23 and the substrate 202. Moreover, the fall of the workability by denaturation of the photosensitive resin film 20 etc. can also be suppressed.

  As an inert gas, nitrogen gas, argon gas, helium gas etc. are mentioned, for example.

  Also, the atmospheric pressure is not particularly limited, and may be under reduced pressure or under pressure, but is preferably normal pressure. Thus, the heat treatment can be performed simply and efficiently, and voids can be relatively easily removed while avoiding damage to the photosensitive resin film 20. That is, under reduced pressure, it takes time and cost to form the state, and the void expands and ruptures, or the component which tends to volatilize is removed, and the characteristics of the photosensitive resin film 20 change. There is a fear. On the other hand, under pressure, the voids are easily pushed into the photosensitive resin film 20, which may make it difficult to remove the voids. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

Here, in FIG. 6, an example of the melt viscosity curve of the photosensitive resin film 20 is shown.
The melt viscosity curve shown in FIG. 6 is a curve in which the viscosity decreases with increasing temperature.

  In such a melt viscosity curve, when the slope of the curve at 50 ° C. (ratio of change in viscosity to temperature) is determined, it is preferably −500 to −10 [(Pa · s) / ° C.], −300 to It is more preferably -30 [(Pa · s) / ° C], and even more preferably -150 to -50 [(Pa · s) / ° C]. By setting the slope of the curve within the above range, the embeddability of the semiconductor chip 23 into the photosensitive resin film 20 is further improved, and air entrapment is less likely to occur. That is, by optimizing the reduction rate of the melt viscosity, it is possible to balance the speed at which the photosensitive resin film 20 enters the gap between the semiconductor chips 23 and the speed at which the entrapped air is discharged. The photosensitive resin film 20 in which the semiconductor chip 23 is embedded in a state where there are few voids is obtained.

When the slope of the curve at 50 ° C. is determined, the viscosity μ 48 at 48 ° C. and the viscosity μ 52 at 52 ° C. may be simply determined, and the rate of change of viscosity in the section may be determined by the following equation.
Curve slope = (μ 52-μ 48) / (52-48)

  In addition, although the melt viscosity of the photosensitive resin film 20 can be adjusted according to a heating condition as mentioned above, it can also adjust with the raw material of the photosensitive resin film 20 besides this. For example, the melt viscosity can be reduced by adding more liquid resin at normal temperature.

  The film thickness of the photosensitive resin film 20 (film thickness of the photosensitive resin layer 210) is appropriately set according to the film thickness after curing (height H in FIG. 2) and in consideration of curing shrinkage, while the semiconductor The thickness is not particularly limited as long as the chip 23 can be embedded, but as an example, it is preferably about 100 to 1000 μm, more preferably about 120 to 750 μm, and still more preferably about 140 to 500 μm. By setting the film thickness of the photosensitive resin film 20 within the above range, a relatively thick semiconductor chip 23 can be easily embedded, and sufficient mechanical strength to the cured film of the photosensitive resin film 20 Can also be granted. As a result, it is possible to form a cured film that contributes to the rigidity of the semiconductor device 1 as well as the good protection of the semiconductor chip 23.

  When the photosensitive resin film 20 laminated on the carrier film is arranged to be pressed against the semiconductor chip 23 in the film arrangement step described above, in the present step (heating step), before the heat treatment described above, It is preferable to include the process of peeling the carrier film from the photosensitive resin film 20. Thereby, the photosensitive resin film 20 can be protected by the carrier film until immediately before the heat treatment. As a result, damage to the photosensitive resin film 20 and adhesion of foreign matter can be prevented, and the surface flatness can be further enhanced.

  On the other hand, heat treatment is performed after the carrier film is peeled off, so that the void can be discharged in a state where the photosensitive resin film 20 is exposed to the outside air, so a path for discharging the void is easily formed. Efficiency is high.

[4] Exposure Step Next, the photosensitive resin layer 210 is exposed.

  First, as shown in FIG. 4F, the mask 41 is disposed in a predetermined area on the photosensitive resin layer 210. Then, light (actinic radiation) is irradiated through the mask 41. Thus, the photosensitive resin layer 210 is exposed according to the pattern of the mask 41.

  In addition, in FIG. 4, the case where the photosensitive resin layer 210 has what is called negative photosensitive property is illustrated. In this example, in the photosensitive resin layer 210, the solubility in the developer is given to the region corresponding to the light shielding portion of the mask 41.

  Thereafter, if necessary, a post-exposure heat treatment is performed. Although the conditions of the post-exposure heat treatment are not particularly limited, for example, the heating temperature is about 50 to 150 ° C., and the heating time is about 1 to 10 minutes.

[5] Development Step Next, the photosensitive resin layer 210 subjected to the exposure processing is subjected to a development processing. Thereby, the opening 42 penetrating the photosensitive resin layer 210 is formed in the region corresponding to the light shielding portion of the mask 41 (see FIG. 4G).
As a developing solution, an organic type developing solution, a water-soluble developing solution, etc. are mentioned, for example.

  After the development process, the photosensitive resin layer 210 is subjected to a post-development heat treatment, if necessary. Although the conditions of the post-development heat treatment are not particularly limited, the heating temperature is about 160 to 250 ° C., and the heating time is about 30 to 120 minutes. Thereby, the photosensitive resin layer 210 can be cured and the organic insulating layer 21 can be obtained while suppressing the thermal influence on the semiconductor chip 23.

[6] Step of Forming Through Wiring Next, as shown in FIG. 4H, the through wiring 22 is formed in the opening 42.

  A known method is used to form the through wiring 22, and for example, the following method is used.

  First, a seed layer (not shown) is formed on the organic insulating layer 21. The seed layer is formed on the top surface of the organic insulating layer 21 together with the inside (sidewalls and bottom surface) of the opening 42.

  As a seed layer, for example, a copper seed layer is used. Also, the seed layer is formed, for example, by sputtering.

  Also, the seed layer may be made of the same kind of metal as the through wire 22 to be formed, or may be made of different kinds of metal.

  Next, a resist layer (not shown) is formed on the region other than the opening 42 in the seed layer (not shown). Then, metal is filled in the opening 42 using the resist layer as a mask. For example, electrolytic plating is used for this filling. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like. Thus, the conductive material is embedded in the opening 42 to form the through wiring 22.

Then, the resist layer not shown is removed. Further, the seed layer (not shown) on the organic insulating layer 21 is removed. For this, for example, a flash etching method can be used.
In addition, the formation location of the penetration wiring 22 is not limited to the position of illustration. For example, it may be provided at a position passing through the photosensitive resin layer 210 covering the semiconductor chip 23.

[7] Upper Wiring Layer Forming Step Next, as shown in FIG. 5I, the upper wiring layer 25 is formed on the upper surface side of the organic insulating layer 21. The upper wiring layer 25 is formed, for example, using a photolithography method and a plating method.

[8] Lower Layer Wiring Layer Forming Step Next, as shown in FIG. 5J, the substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.

  Next, as shown in FIG. 5K, the lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21. The lower wiring layer 24 is formed using, for example, a photolithography method and a plating method. The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 through the through wiring 22.

[9] Step of Forming Solder Bump Next, as shown in FIG. 5L, the solder bump 26 is formed on the lower wiring layer 24. In addition, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.

As described above, the through electrode substrate 2 is obtained.
The through electrode substrate 2 shown in FIG. 5L can be divided into a plurality of regions. Therefore, for example, the through electrode substrate 2 can be efficiently manufactured by dividing the through electrode substrate 2 along the alternate long and short dash line shown in FIG. 5L. In addition, a diamond cutter etc. can be used for individualization, for example.

[10] Stacking Step Next, the semiconductor package 3 is disposed on the singulated through electrode substrate 2. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

  Such a method of manufacturing the semiconductor device 1 can be applied to a wafer level process or a panel level process using a large area substrate.

  Further, by using the photosensitive resin layer 210 made of the photosensitive resin composition, the arrangement of the semiconductor chip 23, the embedding of the semiconductor chip 23, the formation of the through wiring 22, the formation of the upper wiring layer 25, and the lower wiring layer 24. Can be performed by wafer level process or panel level process. As a result, the manufacturing efficiency of the semiconductor device 1 can be enhanced and the cost can be reduced.

<Modification Example of Semiconductor Device Manufacturing Method>
Next, a modification of the method of manufacturing the semiconductor device 1 shown in FIG. 1 (the method of manufacturing the semiconductor device according to the embodiment) will be described.

FIG. 7 and FIG. 8 are views showing a method of manufacturing a semiconductor device according to each modification.
Hereinafter, although a modification is explained, in the following explanation, it explains focusing on difference with the above-mentioned manufacturing method, and omits the explanation about the same matter. In addition, about the structure similar to said manufacturing method, it demonstrates using the same code | symbol.

  In the method of manufacturing the semiconductor device 1 according to the modification, a chip disposing step of disposing the semiconductor chip 23 on the substrate 202, and varnish coating of applying the varnish 5 containing the photosensitive resin composition on the substrate 202 and the semiconductor chip 23 And drying the varnish 5 to form the photosensitive resin layer 211 and melting the photosensitive resin film 20 while laminating on the photosensitive resin layer 211 and embedding the semiconductor chip 23. In the film disposing step of disposing the resin film 20, the heating step of obtaining the photosensitive resin layer 210 by performing heat treatment so that the melt viscosity of the photosensitive resin film 20 is 5 Pa · s or less, It has an exposure process of performing an exposure process, and a development process of performing a development process on the photosensitive resin layer 210.

  According to the modification having such each process, the varnish 5 is applied prior to the placement (lamination) of the photosensitive resin film 20, so that air between the varnish 5 and the substrate 202 or the semiconductor chip 23 can be obtained. It is hard to occur. Therefore, by providing the film disposing step after the varnish applying step, it is possible to obtain the photosensitive resin layer 210 with less voids even if it is a thick film.

The respective steps will be sequentially described below.
[1] Chip Arrangement Step First, as shown in FIG. 7A, a substrate 202 is prepared.
Next, as shown in FIG. 7B, the semiconductor chip 23 is disposed on the substrate 202.

[2] Varnish Application Step Next, as shown in FIG. 7C, the varnish 5 containing the photosensitive resin composition is applied onto the substrate 202 and the semiconductor chip 23. Since the varnish 5 is liquid, it has high fluidity and adheres closely to the surfaces of the substrate 202 and the semiconductor chip 23 without gaps, and easily penetrates the gaps between the semiconductor chips 23. Therefore, the varnish 5 can be applied on the substrate 202 and the semiconductor chip 23 without any gap.

  The application of the varnish 5 is performed, for example, using a spin coater, a bar coater, a spray device, an inkjet device, or the like.

  The viscosity of the varnish 5 is not particularly limited, but is preferably 10 to 500 mPa · s, and more preferably 30 to 200 mPa · s. When the viscosity of the varnish 5 is in the above range, the varnish 5 can be intruded into the narrow gap, and the entrainment of air can be further suppressed. Moreover, it can prevent that the coating film of the varnish 5 becomes thin too much, and can prevent the film breakage | shortage of the varnish 5.

  The viscosity of the varnish 5 is, for example, a value measured at a rotational speed of 20 rpm, a measuring time of 300 seconds, and a measuring temperature of 25 ° C. using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) Ru.

[3] Varnish Drying Step Next, the varnish 5 is dried to obtain a photosensitive resin layer 211 (see FIG. 7D).

  Although the drying conditions of the varnish 5 are not particularly limited, for example, conditions of heating at a temperature of 80 to 150 ° C. for 5 to 30 minutes may be mentioned.

[4] Film Arrangement Step Next, as shown in FIG. 8E, the photosensitive resin film 20 is arranged on the photosensitive resin layer 211. Thereby, a laminate of the photosensitive resin layer 211 and the photosensitive resin film 20 is obtained.

  Next, the photosensitive resin film 20 is heated while being pressed downward. Thereby, the photosensitive resin film 20 is melted, and as shown in FIG. 8F, the photosensitive resin film 20 is disposed so as to be laminated on the photosensitive resin layer 211 and to embed the semiconductor chip 23. be able to.

  At this time, since the photosensitive resin layer 211 and the photosensitive resin film 20 have a high affinity to each other, the adhesion at the contact interface becomes good, and the air can be discharged smoothly. As a result, the generation of voids at the contact interface can be suppressed.

  On the other hand, since the photosensitive resin layer 211 is formed using the varnish 5 as described above, the entrainment of air is suppressed to a low level.

  From the above, in the laminate of the photosensitive resin layer 211 formed from the varnish 5 and the photosensitive resin film 20, the generation of voids accompanying the entrainment of air can be extremely suppressed.

  In addition, although the photosensitive resin layer 211 and the photosensitive resin film 20 may contain mutually different photosensitive resin compositions, it is preferable that the mutually same photosensitive resin composition is included. As a result, the above-mentioned affinity becomes better, and the processability (patternability) after lamination becomes excellent. As a result, finally, the organic insulating layer 21 with particularly good patterning accuracy can be obtained.

[5] Heating Step Next, heat treatment is performed so that the melt viscosity of the photosensitive resin film 20 is 5 Pa · s or less. Thereby, the photosensitive resin layer 210 shown in FIG. 8 (g) is obtained from the photosensitive resin film 20. That is, a laminate 212 of the photosensitive resin layer 211 and the photosensitive resin layer 210 is obtained.

  At this time, it is preferable that the melt viscosity of the photosensitive resin layer 211 as well as the photosensitive resin film 20 is 5 Pa · s or less. As a result, the entrapped air can be discharged more efficiently, and in particular, the formation of the organic insulating layer 21 with less voids becomes possible.

[6] Exposure Step Next, the laminate 212 of the photosensitive resin layers 210 and 211 is exposed.

  First, as shown in FIG. 8H, the mask 41 is disposed in a predetermined area on the laminate 212. Then, light (actinic radiation) is irradiated through the mask 41. Thus, the laminate 212 is exposed according to the pattern of the mask 41.

[7] Development Step Next, the laminate 212 subjected to the exposure processing is subjected to a development processing. Thus, an opening 42 penetrating the stacked body 212 is formed in the region corresponding to the light shielding portion of the mask 41 (see FIG. 8I).

  Thereafter, when the laminate 212 is cured by heat treatment after development, the organic insulating layer 21 shown in FIG. 1 is obtained.

<Photosensitive resin film>
Next, an example of the photosensitive resin film 20 used for the method of manufacturing the semiconductor device 1 will be described.

  The photosensitive resin film 20 is not particularly limited as long as it is a film having photosensitivity and heat melting property, and includes, for example, a thermosetting resin, a curing agent, a photosensitive agent, and a coupling agent.

(Thermosetting resin)
The thermosetting resin is prepared, for example, in a semi-cured (solid) state at normal temperature (25 ° C.). Such a thermosetting resin is melted by being heated and pressurized at the time of molding, and is cured while being molded into a desired shape. Thus, the organic insulating layer 21 utilizing the characteristics of the thermosetting resin is obtained.

As the thermosetting resin, for example, phenol novolac epoxy resin, novolac epoxy resin such as cresol novolac epoxy resin, cresol naphthol epoxy resin, biphenyl epoxy resin, biphenyl aralkyl epoxy resin, phenoxy resin, naphthalene skeleton Epoxy resin, bisphenol A epoxy resin, bisphenol A diglycidyl ether epoxy resin, bisphenol F epoxy resin, bisphenol F diglycidyl ether epoxy resin, bisphenol S diglycidyl ether epoxy resin, glycidyl ether epoxy resin, cresol Novolak type epoxy resin, aromatic polyfunctional epoxy resin, aliphatic epoxy resin, aliphatic polyfunctional epoxy resin, alicyclic epoxy resin, polyfunctional Epoxy resins such as cyclic epoxy resins; resins having a triazine ring such as urea (urea) resins and melamine resins; unsaturated polyester resins; maleimide resins such as bismaleimide compounds; polyurethane resins; diallyl phthalate resins; silicone resins; Polyamide resin; Polyamide imide resin; Cyanate ester resin such as cyanate resin such as benzocyclobutene resin, novolac type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, tetramethyl bisphenol F type cyanate resin It can be mentioned. Moreover, in the thermosetting resin, one of these may be used alone, or two or more having different weight average molecular weights may be used in combination, and one or two or more of them may be used. You may use together with a polymer.
Among them, as the thermosetting resin, those containing an epoxy resin are preferably used.

As an epoxy resin, that whose epoxy group is 2 or more in 1 molecule is mentioned, for example. These may be used alone or in combination of two or more.
Further, as the epoxy resin, a trifunctional or higher polyfunctional epoxy resin may be used.

  The polyfunctional epoxy resin is not particularly limited. For example, 2- [4- (2,3-epoxypropoxy) phenyl] -2- [4- [1,1-bis [4-([2,3-] Epoxypropoxy] phenyl) ethyl] phenyl] propane, phenol novolac type epoxy, tetrakis (glycidyloxyphenyl) ethane, α-2,3-epoxypropoxyphenyl-ω-hydropoly (n = 1-7) {2- (2, 3-epoxypropoxy) benzylidene-2,3-epoxypropoxyphenylene}, 1-chloro-2,3-epoxypropane / formaldehyde / 2,7-naphthalenediol polycondensate, dicyclopentadiene type epoxy resin and the like. These may be used alone or in combination of two or more.

  The thermosetting resin is, in particular, phenol novolac epoxy resin, cresol novolac epoxy resin, triphenylmethane epoxy resin, dicyclopentadiene epoxy resin, bisphenol A epoxy resin, and tetramethyl bisphenol F epoxy resin It is preferable to include one or more epoxy resins selected from the group consisting of, and more preferable to include novolac epoxy resins. Since such a thermosetting resin is an epoxy resin which is polyfunctional and is composed of an aromatic compound, it is possible to obtain an organic insulating layer 21 which is excellent in curability, high in heat resistance, and relatively low in thermal expansion coefficient.

  The thermosetting resin preferably contains a resin that is solid at normal temperature, and more preferably contains both a resin that is solid at normal temperature and a resin that is liquid at normal temperature. The photosensitive resin film 20 containing such a thermosetting resin has good embeddability of the semiconductor chip 23 and the like, improvement in tack (stickiness) of the photosensitive resin film 20, and the cured product of the organic insulating layer 21. Both mechanical strength can be achieved. As a result, it is possible to obtain the organic insulating layer 21 with high mechanical strength in which planarization is achieved while suppressing the generation of voids.

  The amount of the liquid resin at normal temperature is preferably about 5 to 150 parts by mass, more preferably about 10 to 100 parts by mass, and more preferably 15 to 80 parts by mass with respect to 100 parts by mass of the solid resin at normal temperature More preferably, When the ratio of the liquid resin is below the lower limit value, the embedding property of the semiconductor chip 23 in the photosensitive resin film 20 may be reduced, or the stability of the photosensitive resin film 20 may be reduced. On the other hand, when the ratio of the liquid resin exceeds the upper limit value, the tack of the photosensitive resin film 20 may be deteriorated, or the mechanical strength of the organic insulating layer 21 which is a cured product may be reduced.

  Examples of the solid resin at normal temperature include phenol novolac epoxy resin, cresol novolac epoxy resin, and phenoxy resin.

  On the other hand, as liquid resin at normal temperature, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, alkyl glycidyl ether, butanetetracarboxylic acid tetra (3,4-epoxycyclohexylmethyl) modified ε-caprolactone, 3 ', 4′-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, 2-ethylhexyl glycidyl ether, trimethylolpropane polyglycidyl ether and the like. These may be used alone or in combination of two or more.

  The resin which is liquid at normal temperature preferably contains both an aromatic compound and an aliphatic compound. While the photosensitive resin film 20 containing such a compound is mainly provided with appropriate flexibility by the aliphatic compound, the shape retention property is imparted to the photosensitive resin film 20 mainly by the aromatic compound. As a result, a photosensitive resin film 20 having both flexibility and shape retention can be obtained.

  Furthermore, patterning is performed on the photosensitive resin layer 210 by including both a resin that is solid at room temperature and a resin that is liquid at room temperature, or that the resin that is liquid at room temperature includes both an aromatic compound and an aliphatic compound. It is possible to increase the glass transition temperature of the cured product without impairing the property or to lower the linear expansion coefficient of the cured product without impairing the patternability.

  The amount of the aliphatic compound is preferably about 5 to 150 parts by mass, more preferably about 10 to 80 parts by mass, and more preferably about 15 to 50 parts by mass with respect to 100 parts by mass of the aromatic compound. It is further preferred that If the ratio of the aliphatic compound is below the lower limit value, the flexibility of the photosensitive resin film 20 may be lowered depending on the composition of the photosensitive resin film 20 and the like. On the other hand, if the ratio of the aliphatic compound exceeds the upper limit value, the shape retention of the photosensitive resin film 20 may be lowered depending on the composition of the photosensitive resin film 20 and the like.

  The content of the thermosetting resin is not particularly limited, but is preferably about 40 to 80% by mass, and more preferably about 45 to 75% by mass, based on the total solid content of the photosensitive resin film 20. It is more preferable that the amount is about 70% by mass. By setting the content of the thermosetting resin within the above range, the patterning properties of the photosensitive resin layer 210 can be enhanced, and the heat resistance and mechanical strength of the organic insulating layer 21 can be sufficiently enhanced.

  In addition, solid content of the photosensitive resin film 20 refers to the non-volatile content in the photosensitive resin film 20, and refers to the remainder except volatile components, such as water and a solvent. Moreover, in the present embodiment, the content of the photosensitive resin film 20 with respect to the total solid content refers to the content with respect to the total solid content of the photosensitive resin film 20 excluding the solvent when it contains a solvent.

(Hardening agent)
The curing agent is not particularly limited as long as it accelerates the polymerization reaction of the thermosetting resin. For example, when the thermosetting resin contains an epoxy resin, a curing agent having a phenolic hydroxyl group is used. Specifically, a phenol resin can be used.

  As a phenol resin, a novolak-type phenol resin, a resol-type phenol resin, a trisphenylmethane-type phenol resin, an aryl alkylene type phenol resin etc. are mentioned, for example. Among these, novolac type phenol resins are particularly preferably used. As a result, a photosensitive resin layer 210 having good curability and good development characteristics can be obtained.

  The addition amount of the curing agent is not particularly limited, but is preferably 25 parts by mass or more and 100 parts by mass or less, more preferably 30 parts by mass or more and 90 parts by mass or less, with respect to 100 parts by mass of the resin More preferably, it is from 80 parts by weight to 80 parts by weight. By setting the addition amount of the curing agent within the above range, the organic insulating layer 21 having high heat resistance and a relatively low coefficient of thermal expansion can be obtained.

  In addition to the thermosetting resin, the photosensitive resin film 20 may contain a thermoplastic resin. Thereby, the moldability of the photosensitive resin film 20 can be further improved.

  Examples of the thermoplastic resin include acrylic resins, polyamide resins (eg, nylon etc.), thermoplastic urethane resins, polyolefin resins (eg polyethylene, polypropylene etc.), polycarbonate, polyester resins (eg polyethylene terephthalate, polybutylene) Terephthalate etc.), polyacetal, polyphenylene sulfide, polyetheretherketone, liquid crystal polymer, fluorocarbon resin (eg polytetrafluoroethylene, polyvinylidene fluoride etc.), modified polyphenylene ether, polysulfone, polyether sulfone, polyarylate, polyamide imide, poly Ether imide, thermoplastic polyimide, etc. are mentioned. In the photosensitive resin film 20, one of them may be used alone, or two or more of them having different weight average molecular weights may be used in combination, or one or more of them. You may use together with a prepolymer.

(Photosensitizer)
As a photosensitizer, a photo-acid generator can be used, for example. As a photo-acid generator, the photo-acid generator which generate | occur | produces an acid by irradiation of active rays, such as an ultraviolet-ray, is contained.

  As a photo-acid generator, an onium salt compound is mentioned, for example. Specifically, iodonium salts such as diazonium salts and diaryliodonium salts, sulfonium salts such as triaryl sulfonium salts, triaryl bilillium salts, benzyl pyridinium thiocyanate, dialkyl phenacyl sulfonium salts, dialkyl hydroxyphenyl phosphonium salts A cationic type photoinitiator etc. are mentioned.

  The photosensitizer is preferably one which does not generate hydrogen fluoride due to decomposition, such as methide salt type and borate salt type, in consideration of contact of the photosensitive resin film 20 with metal.

  The addition amount of the photosensitizer is not particularly limited, but is preferably about 0.3 to 5% by mass, and about 0.5 to 4.5% by mass of the total solid content of the photosensitive resin film 20. It is more preferable that it is about 1 to 4% by mass. By setting the addition amount of the photosensitizer within the above range, the patterning property of the photosensitive resin layer 210 can be enhanced, and the long-term storage property of the photosensitive resin film 20 can be improved.

  The photosensitizer may be one that imparts negative photosensitivity to the photosensitive resin film 20 or may be one that imparts positive photosensitivity, but the opening with a high aspect ratio In view of the point that it can be formed with high accuracy, etc., it is preferable to be negative.

(Coupling agent)
The photosensitive resin film 20 having a coupling agent enables formation of a resin film having good adhesion to the inorganic material. Thereby, for example, the organic insulating layer 21 having excellent adhesion to the through wiring 22 and the semiconductor chip 23 is obtained.

  As a coupling agent, a coupling agent containing an amino group, an epoxy group, an acryl group, a methacryl group, a mercapto group, a vinyl group, a ureido group, a sulfide group, an acid anhydride etc. as a functional group is mentioned. These may be used alone or in combination of two or more.

  As the amino group-containing coupling agent, for example, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane , Γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropyl Examples include methyl dimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane and the like.

  As the epoxy group-containing coupling agent, for example, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidyl propyl Trimethoxysilane etc. are mentioned.

  Examples of the acrylic group-containing coupling agent include γ- (methacryloxypropyl) trimethoxysilane, γ- (methacryloxypropyl) methyldimethoxysilane, and γ- (methacryloxypropyl) methyldiethoxysilane.

  As a mercapto group containing coupling agent, 3-mercapto propyl trimethoxysilane etc. are mentioned, for example.

  Examples of the vinyl group-containing coupling agent include vinyl tris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.

  As a ureido group containing coupling agent, 3-ureido propyl triethoxysilane etc. are mentioned, for example.

  Examples of sulfide group-containing coupling agents include bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetrasulfide and the like.

  In addition, a coupling agent containing an acid anhydride as a functional group is preferably used. The coupling agent containing an acid anhydride as a functional group (hereinafter referred to as “an acid anhydride-containing coupling agent”) is a cation (a metal cation) as the acid anhydride which is a functional group dissolves the inorganic oxide. Coordinate bond).

  On the other hand, the alkoxy group contained in the acid anhydride-containing coupling agent is hydrolyzed to become, for example, silanol. The silanol hydrogen bonds with the surface hydroxyl group of the inorganic material.

  Based on these bonding mechanisms, a photosensitive resin film 20 having good adhesion to the inorganic material can be obtained.

  As the acid anhydride-containing coupling agent, particularly, alkoxysilylalkylcarboxylic acid anhydride is preferably used. According to such a coupling agent, the photosensitive resin film 20 having better adhesion to the inorganic material, good sensitivity, and excellent patternability can be obtained.

  Specific examples of alkoxysilylalkylcarboxylic acid anhydrides include 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylsilylsuccinic anhydride, 3-dimethylmethoxysilylpropylsuccinic anhydride, 3-dimethyl Succinic anhydride such as ethoxysilyl propyl succinic anhydride, 3-trimethoxysilyl propyl cyclohexyl dicarboxylic acid anhydride, 3-triethoxy silyl propyl cyclohexyl dicarboxylic acid anhydride, 3-dimethyl methoxy silyl propyl cyclohexyl dicarboxylic acid anhydride Dicarboxylic acid anhydrides such as 3-dimethylethoxysilylpropylcyclohexyl dicarboxylic acid anhydride, 3-trimethoxysilylpropylphthalic anhydride, 3-triethoxysilylpropylphthalic anhydride, 3-dimethyenic anhydride Methoxysilylpropyl phthalic anhydride, phthalic acid anhydride, such as 3-dimethyl-ethoxysilylpropyl phthalic anhydride, and the like. These may be used alone or in combination of two or more.

  Among these, succinic anhydride is preferably used, and in particular, 3-trimethoxysilylpropyl succinic anhydride is more preferably used. According to such a coupling agent, the molecular length and the molecular structure are optimized, and thus the adhesion and the patterning property described above become better.

  In addition, although the silane coupling agent was listed here, a titanium coupling agent, a zirconium coupling agent, etc. may be sufficient.

  The addition amount of the coupling agent is not particularly limited, but is preferably about 0.3 to 5% by mass, and about 0.5 to 4.5% by mass of the total solid content of the photosensitive resin film 20. Is more preferable, and about 1 to 4% by mass is more preferable. By setting the addition amount of the coupling agent in the above range, the organic insulating layer 21 having particularly good adhesion to an inorganic material such as the through wiring 22 or the semiconductor chip 23 can be obtained. Thereby, the insulation of the organic insulating layer 21 is maintained for a long period of time, which contributes to the realization of the highly reliable semiconductor device 1.

  In addition, when the addition amount of a coupling agent is less than the said lower limit, there exists a possibility that the adhesiveness with respect to an inorganic material may fall depending on a composition etc. of a coupling agent. On the other hand, when the addition amount of the coupling agent exceeds the above upper limit, the photosensitivity and mechanical properties of the photosensitive resin film 20 may be lowered depending on the composition of the coupling agent and the like.

(Other additives)
Other additives may be added to the photosensitive resin film 20 as necessary. Examples of other additives include antioxidants, fillers such as silica, surfactants, sensitizers, and film-forming agents.

  Examples of the surfactant include fluorine-based surfactants, silicon-based surfactants, alkyl-based surfactants, and acrylic-based surfactants.

(solvent)
The photosensitive resin film 20 may contain a solvent. Any solvent can be used without particular limitation as long as it can dissolve the components of the photosensitive resin film 20 and does not react with the components.

  Examples of the solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol And propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, butyl acetate and the like. These may be used alone or in combination of two or more.

  Although the present invention has been described above based on the illustrated embodiments, the present invention is not limited to these.

  For example, in the method of manufacturing a semiconductor device of the present invention, an arbitrary target process may be added to the above embodiment.

  The photosensitive resin composition of the present invention is also applicable to a buffer coat for semiconductor, a rewiring layer, an alpha ray preventing film, an interlayer insulating film, etc., in addition to the organic insulating layer as in the embodiment. Since all of these are used as permanent films, high mechanical properties possessed by the cured product of the photosensitive resin composition of the present invention act effectively.

Next, specific examples of the present invention will be described.
1. Preparation of test piece (Experimental example 1)
First, the raw materials shown in Tables 1 and 2 were dissolved in benzyl alcohol to prepare a solution.

  Next, the prepared solution was filtered with a polypropylene filter having a pore size of 0.2 μm to obtain a varnish-like photosensitive resin composition. The photosensitive resin composition was negative, and the solid content was 50% by mass.

  Next, a 38 μm thick PET (polyethylene terephthalate) film was prepared, and this was used as a carrier film to apply a photosensitive resin composition. A bar coater was used as the coating apparatus. After the application, it was dried at 120 ° C. for 10 minutes to obtain a photosensitive resin film having an average thickness of 150 μm.

  Next, a 38 μm-thick PET film was prepared as a cover film, and this was attached to a photosensitive resin film. Thereby, a laminated film was obtained.

  Then, melt viscosity in 30-150 ° C was measured about the obtained photosensitive resin film. The measurement results are shown in Table 2. In addition, the slope of the curve at 50 ° C. was determined based on the melt viscosity curve obtained from the result of the melt viscosity measurement.

  Next, a test piece in which five silicon chips were arranged on an organic substrate was prepared. The silicon chip was a 1 cm square and had a thickness of 175 μm.

  Subsequently, the cover film was peeled off from the laminated film of each example and each comparative example to expose the photosensitive resin film, and the photosensitive resin film was superposed on the silicon chip.

  Next, the photosensitive resin film and the test piece were pressurized at 80 ° C. and 0.4 MPa for 30 seconds using a vacuum pressure type laminator, and then the carrier film was peeled from the photosensitive resin film. Thereby, the photosensitive resin film was left.

  Next, the photosensitive resin film was heated at normal pressure (atmospheric pressure: 100 kPa) in a nitrogen gas atmosphere. Thus, a photosensitive resin layer in which a silicon chip is embedded was obtained. The heating conditions are as shown in Table 2.

  As described above, a test piece provided with an organic substrate, a silicon chip, and a photosensitive resin layer was obtained.

(Experimental example 2-10)
As the melt viscosity of the photosensitive resin film is shown in Tables 1 and 2, test pieces were obtained in the same manner as in Experimental Example 1 except that the raw material of the photosensitive resin film was changed.

2. Evaluation of Test Pieces 2.1 Evaluation of Voids First, the test pieces obtained in each experimental example were observed with an optical microscope from the photosensitive resin film side.

Next, the presence or absence of a void (air inclusion) was confirmed for the area where the five silicon chips are located and the area 5 mm wide around it. In addition, the void targeted at 10 micrometers or more in diameter.
And about the confirmation result, it evaluated in light of the following evaluation criteria.

<Evaluation criteria of void>
:: The total number of voids is 2 or less ○: The total number of voids is 3 or more and 5 or less Δ: The total number of voids is 6 or more and 10 or less ×: The total number of voids is 11 or more The evaluation results are shown in Table 2.

2.2 Processability evaluation First, the exposure process using the mask for negative patterns and the line stepper (NSR-4425i by Nikon Corporation) was performed with respect to the test piece obtained by each experiment example. Thereafter, a post-exposure heat treatment was performed at 70 ° C. for 5 minutes.

  Next, the unexposed area was dissolved and removed by performing spray development using propylene glycol monomethyl ether acetate (PGMEA) at 25 ° C. as a developer, and then rinsing with isopropyl alcohol (IPA).

  Next, whether or not patterning was possible was visually confirmed, and the processability (patternability) was evaluated in light of the following evaluation criteria.

<Evaluation criteria for patternability>
:: A highly accurate pattern could be obtained by dissolving the unexposed area ○: A pattern could be obtained by dissolving the unexposed area Δ: Low precision by dissolving the unexposed region The pattern could be obtained x: The pattern could not be obtained due to total dissolution or insolubility. The evaluation results are shown in Table 2.

  In Table 2, among the experimental examples, those corresponding to the present invention are referred to as “examples” and those not corresponding to the present invention are referred to as “comparative examples”.

  As apparent from Table 2, it became clear that the photosensitive resin film obtained in each Example can form a resin film having a small number of voids accompanying air entrainment.

Reference Signs List 1 semiconductor device 2 through electrode substrate 3 semiconductor package 5 varnish 20 photosensitive resin film 21 organic insulating layer 22 through wiring 23 semiconductor chip 24 lower layer wiring layer 25 upper layer wiring layer 26 solder bump 31 package substrate 32 semiconductor chip 33 bonding wire 34 sealing Layer 35 Solder bump 41 Mask 42 Opening 202 Substrate 210 Photosensitive resin layer 211 Photosensitive resin layer 212 Laminated body

Claims (6)

A chip disposing step of disposing a semiconductor chip on a substrate;
A film disposing step of disposing the photosensitive resin film so as to embed the semiconductor chip while melting the photosensitive resin film after the chip disposing step;
After the film disposing step, the photosensitive resin film is subjected to a heat treatment so as to have a melt viscosity of 5 Pa · s or less to obtain a photosensitive resin layer,
An exposure step of exposing the photosensitive resin layer after the heating step;
A development step of developing the photosensitive resin layer after the exposure step;
A method of manufacturing a semiconductor device, comprising:   The method of manufacturing a semiconductor device according to claim 1, wherein a temperature of the heat treatment in the heating step is 85 to 115 ° C. 4.   The method of manufacturing a semiconductor device according to claim 1, wherein a pressure of the heat treatment in the heating step is normal pressure.   4. The method of manufacturing a semiconductor device according to claim 1, wherein an atmosphere of the heat treatment in the heating step is an inert gas atmosphere. The film disposing step is a step of pressing the photosensitive resin film laminated on a carrier film against the semiconductor chip,
The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the heating step includes a treatment of peeling the carrier film from the photosensitive resin film before the heat treatment.   The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein the thickness of the photosensitive resin film is 100 to 1000 μm.

Images