JP2012114297A - Manufacturing method of electronic apparatus, electronic apparatus, manufacturing method of electronic apparatus package, and electronic apparatus package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an electronic apparatus, the electronic apparatus, a manufacturing method of an electronic apparatus package, and the electronic apparatus package which do not cause displacement of electronic components, make damage to a sealing material and the electronic components less likely to occur, and easily remove residues when the residue is adhered in a manufacturing process of a relocation type electronic apparatus.SOLUTION: A manufacturing method of an electronic apparatus has a process in which a fixing resin layer 60 is formed on a support substrate 50, a process in which electronic components 11 are fixed, a process in which a sealing material layer 70 is formed, a process in which an electronic component arrangement sealant hardened material 80 is obtained, and a process in which the electronic component arrangement sealant hardened material 80 is peeled from the support substrate 50. In the peeling process, an active energy ray is radiated to the fixing resin layer 60. Then, the electronic component arrangement sealant hardened material 80 is peeled from the support substrate 50 by heating and melting the fixing resin layer 60.

Description

  The present invention relates to an electronic device manufacturing method, an electronic device, an electronic device package manufacturing method, and an electronic device package.

  In recent years, electronic components such as a semiconductor chip on which an integrated circuit is mounted have been used for various purposes, and a wide variety of functions are required. In addition, there is a demand for an increase in the amount of information processing and speeding up of processing capacity, the density of semiconductor chips has been increased, and the number of wiring of semiconductor chips has increased, but there is a limit to the wiring pitch, Also, the number of input / output wires depends on the area of the semiconductor chip, and there is a limit to the number of wires.

  In order to solve such problems and realize high-density mounting, COC (chip-on-chip) technology for electrically laminating semiconductor chips has been proposed, but the problem of poor yield when laminating semiconductor chips is proposed In some cases, the connection reliability is poor.

  In view of such a problem, an adhesive layer is formed on the support substrate, and then electronic components such as semiconductor chips separated on the adhesive layer are arranged and fixed at intervals, and then a semiconductor sealing material or the like The electronic component is sealed so as to cover the electronic component, and then the cured product of the sealing material on which the electronic component is arranged is peeled off from the adhesive layer, and then re-applied to the surface that is in contact with the adhesive layer of the electronic component. Relocation-type electronic devices have been proposed that use wiring technology to draw wires outside the outer diameter of electronic components, increase the number of input / output wires, and support high density (for example, (See Patent Document 1).

  The adhesive layer used in the rearranged electronic device has a function of fixing the electronic component to the support substrate so that the electronic component does not shift at a temperature sealed with the sealing material. After the material is thermally cured, it is required that the cured product of the sealing material on which the electronic component is disposed can be easily peeled from the support substrate provided with the adhesive layer. Moreover, it is preferable that the residue of an adhesive layer does not adhere to the hardened | cured material of the sealing material in which the electronic component is arrange | positioned in the case of this peeling.

  On the other hand, the conventionally proposed adhesive layer is a thermoplastic adhesive layer or a heat-foamed adhesive layer. Therefore, the function of fixing electronic components without causing displacement, and the cured product of the sealing material from the support substrate. It has been difficult to achieve both a function of easily peeling and a function of preventing residue from adhering (see, for example, Patent Documents 2 and 3).

  If the electronic component is misaligned, it cannot be accurately rewired in the subsequent rewiring process, and the encapsulant or electronic component cannot be easily peeled off. If the adhesive layer residue adheres to the cured material of the sealing material on which the electronic component is disposed, a problem such as a decrease in the reliability of the electronic device occurs.

JP 2006-287235 A JP 2005-191296 A JP-A-2005-243702

  The object of the present invention is that the electronic component is not misaligned in the manufacturing process of the rearrangement type electronic device, and the sealing material and the electronic component are not easily damaged, and even if the residue adheres. Manufacturing method of electronic device that can be easily removed, highly reliable electronic device manufactured by manufacturing method of such electronic device, manufacturing method of electronic device package including manufacturing method of such electronic device, and electronic An object of the present invention is to provide a highly reliable electronic device package manufactured by a method for manufacturing a device package.

Such an object is achieved by the present invention described in the following (1) to (15).
(1) a fixed resin layer forming step of providing a fixed resin layer on the surface of the support substrate;
An electronic component in which a plurality of electronic components are arranged on the fixed resin layer so that a gap is formed between adjacent ones, and the electronic component is fixed on the support substrate via the fixed resin layer A fixing process;
A sealing material layer forming step of covering the electronic component with a sealing material and forming a sealing material layer on the fixed resin layer and the electronic component;
The encapsulant curing step of curing the encapsulant by heating the encapsulant and obtaining a cured electronic component arrangement encapsulant that is supported by the support base material and on which the electronic components are arranged, and ,
A peeling step of peeling the electronic component placement sealing material cured product supported by the support base material from the support base material,
In the peeling step, after the fixed resin layer is irradiated with active energy rays, the fixed resin layer is heated and melted to peel off the electronic component placement sealing material from the support substrate. A method for manufacturing an electronic device.

  (2) The manufacturing method of the electronic device according to (1), wherein a temperature for heating the sealing material in the sealing material curing step is lower than a temperature for melting the fixed resin layer in the peeling step.

  (3) The method for manufacturing an electronic device according to (1) or (2), wherein a temperature at which the fixing resin layer is melted in the peeling step is 130 to 200 ° C.

  (4) The melt viscosity at 180 ° C. after irradiation of the active energy ray of the fixed resin layer is 0.01 to 100 Pa. The method for manufacturing an electronic device according to any one of the above (1) to (3), which is s.

(5) a fixed resin layer forming step of providing a fixed resin layer on the surface of the support substrate;
An electronic component in which a plurality of electronic components are arranged on the fixed resin layer so that a gap is formed between adjacent ones, and the electronic component is fixed on the support substrate via the fixed resin layer A fixing process;
A sealing material layer forming step of covering the electronic component with a sealing material and forming a sealing material layer on the fixed resin layer and the electronic component;
The encapsulant is cured by heating the encapsulant and is supported by the support base material to obtain a cured electronic component arrangement encapsulant in which the electronic components are arranged. It is a manufacturing method of an electronic device having a sealing material curing and peeling step for peeling a cured cured material from the support substrate,
In the sealing material curing and peeling step, the fixed resin layer is irradiated with an active energy ray, and then the fixed resin layer is melted by the heating so that the cured electronic component arrangement sealing material is the support base material. A method for manufacturing an electronic device, comprising:

  (6) The manufacturing method of the electronic device according to (5), wherein a temperature at which the fixing resin layer is melted in the sealing material curing and peeling step is 130 to 200 ° C.

  (7) The melt viscosity at 180 ° C. after irradiation of the active energy ray of the fixed resin layer is 0.01 to 100 Pa.s. The method for manufacturing an electronic device according to the above (5) or (6), which is s.

  (8) Furthermore, a wiring layer is obtained by forming a wiring layer on a surface of the electronic component placement sealing material cured product on which the electronic component is placed, and obtaining a cured electronic component placement sealing material on which the wiring layer is formed. The method for manufacturing an electronic device according to any one of (1) to (7), including a forming step.

  (9) Furthermore, the electronic component placement encapsulating material cured product on which the wiring layer is formed is divided into individual pieces by dividing the electronic component arrangement encapsulating material cured product on which the wiring layer is formed. The manufacturing method of the electronic device as described in said (8) which has the individualization process which obtains the said electronic component arrangement | positioning sealing material hardened | cured material.

  (10) The fixed resin layer includes a resin composition containing a resin component whose melt viscosity is lowered in the presence of an acid or a base, and an activator that generates an acid or a base by irradiation with the active energy ray. (1) The manufacturing method of the electronic device in any one of (9).

  (11) The method for manufacturing an electronic device according to (10), wherein the resin component is a polycarbonate resin.

  (12) The method for producing an electronic device according to (11), wherein the polycarbonate-based resin includes at least two cyclic bodies in a carbonate constituent unit.

  (13) An electronic device manufactured by the method for manufacturing an electronic device according to any one of (1) to (12).

  (14) A method for manufacturing an electronic device package, comprising a mounting step of mounting the individualized electronic component arrangement sealing material cured product according to (9) on a substrate.

  (15) An electronic device package manufactured by the method for manufacturing an electronic device package according to (14).

  The fixed resin layer formed in the method for manufacturing an electronic device and the method for manufacturing an electronic device package of the present invention has a melt viscosity that is reduced by irradiation with active energy rays. Therefore, formation of the electronic component arrangement sealing material cured product on the support base material can be performed without causing positional displacement of the electronic component. Furthermore, when the electronic component placement sealing material cured product is peeled from the support substrate, the fixed resin layer can be melted at a low heating temperature to peel the electronic component placement sealing material cured product. There is an effect that it is possible to accurately prevent breakage such as cracks in the electronic component or the sealing material while reducing the damage to the component arrangement sealing material cured product.

It is a typical longitudinal cross-sectional view which shows one Embodiment of the electronic device package of this invention. It is a typical longitudinal cross-sectional view which shows 1st Embodiment of the manufacturing method of the electronic device package of this invention. It is a typical longitudinal cross-sectional view which shows 1st Embodiment of the manufacturing method of the electronic device package of this invention. It is a typical longitudinal cross-sectional view which shows 1st Embodiment of the manufacturing method of the electronic device package of this invention.

  Hereinafter, a method for manufacturing an electronic device of the present invention, an electronic device of the present invention, a method of manufacturing an electronic device package of the present invention, and an electronic device package of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

First, the electronic device package of the present invention will be described.
<Electronic device package>
FIG. 1 is a longitudinal sectional view showing an embodiment of an electronic device package of the present invention. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.

  An electronic device package 10 illustrated in FIG. 1 includes an interposer 20 in which a wiring circuit 19 is formed, and an electronic device (semiconductor device) 30 disposed on the interposer 20. The interposer 20 and the electronic device 30 are electrically connected by the wiring circuit 19 and the bumps 18 included in each of the interposer 20 and the electronic device 30.

  The electronic device (electronic device of the present invention) 30 is provided with a semiconductor chip 11 and a sealing portion 13 so as to cover the semiconductor chip 11. The semiconductor chip 11 is provided below the functional surface 12 of the semiconductor chip 11. The first insulating layer 14 is provided in the periphery of the conductive via 15 connected to the terminal 11 (not shown) and the conductive via 15, and the conductive via 15 is provided under the conductive via 15. A conductor layer 16 and a second insulating layer 17 connected to the via 15 are provided, and a bump 18 connected to the conductor layer 16 is provided below the conductor layer 16.

  The interposer (substrate) 20 is a substrate that supports the electronic device 30, and its planar view shape is usually a square such as a square or a rectangle. The interposer 20 is made of various resin materials such as polyimide, epoxy, cyanate, bismaleimide triazine (BT resin).

  On the upper surface (one surface) of the interposer 20, for example, a wiring circuit 19 made of a conductive metal material such as copper is provided in a predetermined shape.

  The conductive via 15 electrically connects a terminal (not shown) of the semiconductor chip 11 and the conductor layer 16, and the conductor layer 16 may be formed only on the wall surface of the via 15. The conductor layer 16 may be formed on the entire 15. When the conductor layer 16 is formed only on the wall surface of the via 15, the gap of the via 15 is preferably filled with an insulating material.

  The conductor layer 16 electrically connects the conductive via 15 and the bump 18 and is made of a conductive metal material such as copper, for example.

  The bump 18 electrically connects the conductor layer 16 and the wiring circuit 19 on the interposer 20, and the portion protruding from the electronic device 30 is the bump 18. It is almost spherical (Ball shape). The bumps 18 are mainly composed of a brazing material such as solder, silver brazing, copper brazing, or phosphor copper brazing.

<Method for Manufacturing Electronic Device Package>
An electronic device package (electronic component) 10 as shown in FIG. 1 can be manufactured, for example, as follows by applying the method for manufacturing an electronic device package of the present invention.

<< First Embodiment >>
First, a first embodiment of an electronic device package manufacturing method for manufacturing the electronic device package 10 will be described.

  That is, in the first embodiment of the method for manufacturing the electronic device package 10, there is a gap between the fixed resin layer forming step of providing the fixed resin layer on the surface of the support substrate and the adjacent ones on the fixed resin layer. An electronic component fixing step in which a plurality of electronic components are arranged so as to be formed, and the electronic components are fixed on the support base material via the fixing resin layer, and the electronic components are covered with a sealing material and fixed A sealing material layer forming step for forming a sealing material layer on the resin layer and the electronic component; and the sealing material is cured by heating the sealing material, and is supported by the support base material, A sealing material curing step for obtaining an electronic component arrangement sealing material cured product in which the electronic components are arranged, and peeling the electronic component arrangement sealing material cured product supported by the support base material from the support base material. A peeling step, and in the peeling step By heating and melting the fixing resin layer after the irradiation with the active energy ray to the fixed resin layer, characterized by peeling the electronic part arranged encapsulant cured from the supporting substrate.

  In the present invention, as described above, in the peeling step, the fixed resin layer is heated after irradiating the fixed resin layer with active energy rays. Therefore, the fixed resin layer heated after being irradiated has a lower melt viscosity than the fixed resin layer not irradiated with the active energy ray before heating. Therefore, even if the formation of the electronic component placement encapsulant cured material on the support base material has undergone a thermal history during the formation of this, the melt viscosity of the fixed resin layer has not decreased, so the position of the electronic component This can be done without any deviation. Furthermore, since the fixed resin layer can be melted and peeled off at a low heating temperature when peeling the electronic component placement sealing material cured product from the support base material, While reducing damage, it is possible to accurately prevent the occurrence of breakage such as cracks in the electronic component or the sealing material.

  2 to 4 show that when the electronic device package 10 is viewed in plan (upper side in FIG. 2), the rearrangement type electronic device 30 that draws wiring outside the outer edge of the electronic device package 10 is on the interposer 20. It is a typical longitudinal cross-sectional view for demonstrating 1st Embodiment of the manufacturing method of the electronic device package 10 arrange | positioned. 2 to 4 are schematic longitudinal sectional views showing the first embodiment of the method for manufacturing an electronic device package of the present invention. In the following description, the upper side in FIGS. 2 to 4 is referred to as “upper” and the lower side is referred to as “lower”.

  [1] First, a semiconductor chip (electronic component) 11 and a support substrate (support base material) 50 as shown in FIG.

  The support substrate 50 is not particularly limited as long as it has flatness, rigidity, and heat resistance. However, as in the present embodiment, active energy via the support substrate 50 is used in a peeling step described later. In the case where the melt viscosity of the fixed resin layer 60 is reduced by irradiation with a line, one having light transparency is used. As a result, it is possible to reliably irradiate the fixed resin layer 60 via the support substrate 50 with active energy rays.

  As the support substrate 50 having optical transparency, for example, a glass material such as quartz glass or soda glass, or a resin material such as polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, or polycarbonate is a main material. A substrate configured as follows.

[2] Next, a fixed resin layer 60 for fixing the semiconductor chip 11 is formed on the support substrate 50 (surface) (see FIG. 2B; fixed resin layer forming step).

  The fixed resin layer 60 is preferably formed to have a uniform film thickness so that wiring can be formed with high precision in a wiring layer forming step, which will be described later.

  The method of forming the fixed resin layer 60 is not particularly limited, but a method of forming the liquid fixed resin layer 60 by a spin coating method, a printing method, a dispensing method, or laminating a film-shaped fixed resin layer 60 A method of spin-coating the liquid fixed resin layer 60 and a method of laminating the film-shaped fixed resin layer 60, which are excellent in film thickness uniformity of the fixed resin layer 60, are preferable.

  The method for forming the liquid fixed resin layer 60 by spin coating, printing, or dispensing is not particularly limited, and the liquid fixed resin layer 60 at room temperature or the solid fixed resin layer 60 at room temperature is a solvent. Alternatively, the varnish-like fixed resin layer 60 dissolved in a diluent can be formed using a known spin coater, printer, or dispenser.

  The method of laminating the film-like fixed resin layer 60 is not particularly limited, but the varnish-like fixed resin layer 60 is applied to a base film such as polyethylene, polypropylene, polyethylene terephthalate and dried. Thus, the film-like fixed resin layer 60 can be produced, and then the film-like fixed resin layer 60 can be formed by using a known laminator or the like.

  Here, the fixed resin layer 60 is one whose melting temperature is lowered by irradiation with active energy rays, and more specifically, a resin component whose melt viscosity is lowered in the presence of an acid or a base, and the activity The resin composition containing the activator which generate | occur | produces an acid or a base by irradiation of an energy ray is included.

  Hereinafter, each component which comprises the resin composition contained in this fixed resin layer 60 is demonstrated sequentially.

(Resin component)
The resin component has a function of fixing the semiconductor chip 11 to the support substrate 50 when the electronic component placement sealing material cured product 80 is formed on the support substrate 50 and is heated after being irradiated with active energy rays. Since the melt viscosity is lower than that in the case of not irradiating active energy rays, the function of easily detaching the cured electronic component arrangement sealing material 80 from the support substrate 50 by heating after irradiation of active energy rays. It is what has.

  The resin component is not particularly limited as long as the melt viscosity is lowered in the presence of an acid or a base, and examples thereof include polycarbonate resins, polyester resins, polyamide resins, and polyether resins. Resins, polyurethane-based resins, (meth) acrylate-based resins, and the like can be given, and one or more of these can be used in combination. Among these, polycarbonate resins, vinyl resins and (meth) acrylic resins are preferable, and polycarbonate resins are particularly preferable. These are more suitably selected as a resin component because their melt viscosity is more significantly reduced in the presence of an acid or a base.

  The vinyl resin is not particularly limited. For example, a polymer of a styrene derivative such as polystyrene or poly-α-methylstyrene, a poly (ethyl vinyl ether), a poly (butyl vinyl ether), or a polyvinyl ether such as polyvinyl formal. And derivatives thereof, etc., and one or more of them can be used in combination. Among these, poly-α-methylstyrene is preferable. Such a resin component is particularly preferably used from the viewpoint of excellent workability.

  In addition, the (meth) acrylic resin is not particularly limited. For example, methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) acrylate, Examples thereof include copolymers selected from various (meth) acrylic monomers such as (meth) acrylic acid and 2-hydroxyethyl (meth) acrylate. Among these, polymethyl methacrylate or polyethyl methacrylate is preferable. Such a resin component is particularly preferably used from the viewpoint of excellent workability.

  Furthermore, the polycarbonate-based resin is not particularly limited, but includes a linear chemical structure such as polypropylene carbonate, polyethylene carbonate, and polybutylene carbonate in a carbonate constituent unit, or a cyclic chemical structure in a carbonate structural unit. Among them, among them, it is preferable that a cyclic chemical structure is contained in the carbonate structural unit. Such a resin component is particularly preferably used from the viewpoint of excellent workability.

  Hereinafter, the polycarbonate resin comprising the cyclic chemical structure in the carbonate structural unit will be described in detail.

  The polycarbonate-based resin may have any structure as long as its structural unit has a cyclic chemical structure (hereinafter also referred to as “cyclic body”), but at least two cyclic bodies may be used. It is preferable that it has. By appropriately selecting the number and type of cyclic bodies in such a polycarbonate-based resin, the melt viscosity at 180 ° C. of the product can be determined by the action of an acid or base generated from the active agent by irradiation with active energy rays. It can be easily set within.

  The number of cyclic bodies is preferably 2 to 5, more preferably 2 or 3, and still more preferably 2. By including such a number of cyclic bodies as carbonate structural units, the fixed resin layer 60 can bond the semiconductor chip 11 onto the support substrate 50 with excellent adhesion before irradiation with active energy rays. Become.

  In addition, the plurality of cyclic bodies may have a linked polycyclic structure in which the vertices are connected to each other, but a condensed polycyclic structure in which the sides of each ring are connected to each other. It is preferable. Thereby, since the planarity of the carbonate structural unit is improved, it becomes possible to set a larger difference in melt viscosity at 180 ° C. before and after irradiation with active energy rays.

  Furthermore, it is preferable that each of the plurality of cyclic bodies is a 5-membered ring or a 6-membered ring. Thereby, since the planarity of the carbonate structural unit is further maintained, it becomes possible to set a larger difference in melt viscosity at 180 ° C. before and after irradiation with the active energy ray and to dissolve in the solvent described later. Sex can be made more stable.

  Such a plurality of cyclic bodies are preferably alicyclic compounds. When each cyclic body is an alicyclic compound, the effects as described above are more remarkably exhibited.

  In consideration of these, in the polycarbonate (resin component), as the carbonate structural unit, for example, a structure represented by the following chemical formula (1) is a particularly preferable structure.

  In addition, the polycarbonate which has a carbonate structural unit represented by the said Chemical formula (1) can be obtained by the polycondensation reaction of decalin diol and carbonic acid diester like diphenyl carbonate.

  Moreover, in the carbonate structural unit represented by the chemical formula (1), those derived from the carbon atom linked to the hydroxyl group of decalindiol are each decalin (that is, two cyclic bodies forming a condensed polycyclic structure). It is preferable that three or more atoms intervene between the carbon atoms that are bonded to the carbon atoms constituting and bonded to these hydroxyl groups. As a result, the linearity of the polycarbonate is maintained, and as a result, the difference in melt viscosity at 180 ° C. before and after irradiation with the active energy ray can be set more reliably. Furthermore, the solubility with respect to the solvent mentioned later can be stabilized more.

  Examples of such a carbonate structural unit include those represented by the following chemical formulas (1A) and (1B).

  Further, the plurality of cyclic bodies may be alicyclic compounds or may be heteroalicyclic compounds. Even when each cyclic body is a heteroalicyclic compound, the effects as described above are more remarkably exhibited.

  In this case, in the polycarbonate (resin component), as the carbonate structural unit, for example, one represented by the following chemical formula (2X) is a particularly preferred structure.

  The polycarbonate having a carbonate structural unit represented by the chemical formula (2X) can be obtained by a polycondensation reaction between an ether diol represented by the following chemical formula (2a) and a carbonic acid diester such as diphenyl carbonate.

  In the carbonate structural unit represented by the chemical formula (2X), the carbon atom derived from the hydroxyl group of the cyclic ether diol represented by the chemical formula (2a) forms the cyclic ether (that is, a condensed polycyclic structure). It is preferable that three or more atoms are interposed between these carbon atoms and bonded to the carbon atoms constituting the two cyclic bodies. Thereby, the decomposability | decomposability of a polycarbonate can be controlled, As a result, it becomes possible to set more reliably the difference of the melt viscosity in 180 degreeC before and behind irradiation of an active energy ray. Furthermore, the solubility with respect to the solvent mentioned later can be stabilized more.

  Examples of such a carbonate structural unit include those of the 1,4: 3,6-dianhydro-D-sorbitol (isosorbide) type represented by the following chemical formula (2A), and those represented by the following chemical formula (2B). 4: 3,6-dianhydro-D-mannitol (isomannide) type.

  The weight average molecular weight (Mw) of the resin component (polycarbonate) is preferably 1,000 to 1,000,000, and more preferably 5,000 to 800,000. By setting the weight average molecular weight to the above lower limit or more, in this step, the effect of improving the wettability of the resin composition to the support substrate 50 and the effect of improving the film forming property of the fixed resin layer 60 can be obtained. it can.

  Moreover, it is preferable that the resin component is mix | blended in the ratio of about 10 to 100 weight% of the whole quantity of a resin composition, and it is more preferable to mix | blend in the ratio of 30 to 100 weight%. By making content of a resin component more than the said lower limit, the adhesiveness of the resin composition with respect to the electronic component arrangement | positioning sealing material hardened | cured material 80 after the peeling process mentioned later can be reduced reliably. Therefore, in the cleaning process, the resin composition (fixed resin layer 60) remaining in the electronic component placement sealing material cured product 80 can be easily removed.

(Active agent)
The activator generates an active species such as an acid or a base when energy is applied by irradiation of an active energy ray, and has a function of reducing the melt viscosity of the resin component by the action of the active species. It is what you have.

  The activator is not particularly limited, and examples thereof include a photoacid generator that generates an acid upon irradiation with active energy rays, and a photobase generator that generates a base upon irradiation with active energy rays.

  The photoacid generator is not particularly limited, and examples thereof include tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) phenyl] iodonium (DPI-TPFPB), tris (4-t- Butylphenyl) sulfonium tetrakis- (pentafluorophenyl) borate (TTBPS-TPFPB), tris (4-t-butylphenyl) sulfonium hexafluorophosphate (TTBPS-HFP), triphenylsulfonium triflate (TPS-Tf), bis ( 4-tert-butylphenyl) iodonium triflate (DTBPI-Tf), triazine (TAZ-101), triphenylsulfonium hexafluoroantimonate (TPS-103), triphenylsulfonium bis (par Fluoromethanesulfonyl) imide (TPS-N1), di- (pt-butyl) phenyliodonium, bis (perfluoromethanesulfonyl) imide (DTBPI-N1), triphenylsulfonium, tris (perfluoromethanesulfonyl) methide ( TPS-C1), di- (pt-butylphenyl) iodonium tris (perfluoromethanesulfonyl) methide (DTBPI-C1), and the like, and one or a combination of two or more of these can be used. . Among these, tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) phenyl] iodonium (DPI-), particularly from the viewpoint that the melt viscosity of the resin component can be efficiently lowered. TPFPB) is preferred.

  The photobase generator is not particularly limited, and examples thereof include 5-benzyl-1,5-diazabicyclo (4.3.0) nonane, 1- (2-nitrobenzoylcarbamoyl) imidazole, and the like. 1 type or 2 types or more can be used in combination. Among these, 5-benzyl-1,5-diazabicyclo (4.3.0) nonane and derivatives thereof are particularly preferable from the viewpoint that the melt viscosity of the resin component can be efficiently lowered.

  The activator is preferably about 0.01 to 50% by weight, more preferably about 0.1 to 30% by weight of the total amount of the resin composition. By setting it within such a range, it becomes possible to stably lower the melt viscosity of the resin component within the target range.

  A structure in which an active species such as an acid or a base is generated by irradiating an active energy ray by adding such an activator, and the melt viscosity of the main chain of the resin component is lowered by the action of the active species. Is presumed to be formed.

(Sensitizer)
Moreover, it is preferable that the resin composition contains the sensitizer which is a component which has the function to express or increase the reactivity of the active agent with respect to the active energy ray of a specific wavelength with an active agent.

  The sensitizer is not particularly limited. For example, anthracene, phenanthrene, chrysene, benzpyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H -Thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, 1-chloro-4-propoxythioxanthone, and mixtures thereof. The content of such a sensitizer is preferably 100 parts by weight or less and more preferably 50 parts by weight or less with respect to 100 parts by weight of the activator described above.

(Acid scavenger)
Furthermore, the resin composition may contain, for example, an acid scavenger.

  The acid scavenger is a component having a function of preventing the acid generated by irradiation with active energy rays from diffusing into a site not irradiated with active energy rays.

  Examples of the acid scavenger include tri (n-propyl) amine, triethylamine, a compound represented by the following general formula (2), and an amine represented by a compound represented by the following general formula (3). (Secondary amine, tertiary amine), and a mixture thereof.

一般式（２）中、Ｒ^１は、Ｈ、または、アルキル基である。

In general formula (2), R ¹ is H or an alkyl group.

一般式（３）中、Ｒ^２〜Ｒ^６は、Ｈ、または、任意の２つがメチル基で残りが水素である。

In General Formula (3), R ^{2 to} R ⁶ are H or any two are methyl groups and the rest are hydrogen.

  Among these, it is preferable to use at least one compound selected from the group consisting of the compound represented by the general formula (2) and the compound represented by the general formula (3). It is more preferable to use a compound represented by Thereby, the fall of the melt viscosity of the site | part which is not irradiating an active energy ray can be prevented effectively, making the sensitivity with respect to the active energy ray of a resin composition high.

  The content of the acid scavenger is preferably 0.01 to 10 parts by weight and more preferably 0.02 to 8 parts by weight with respect to 100 parts by weight of the aforementioned activator. Thereby, the fall of the melt viscosity of the site | part which has not irradiated the active energy ray can be prevented further effectively.

(Antioxidant)
Further, the resin composition may contain an antioxidant.

  The antioxidant has a function of preventing generation of undesirable acids and natural oxidation of the resin composition.

  The antioxidant is not particularly limited. For example, Ciba IRGANOX (registered trademark) 1076 or Ciba IRGAFOS (registered trademark) 168 available from Ciba Fine Chemicals of Tarrytown, New York is preferably used. It is done.

  In addition, as other antioxidants, for example, Ciba Irganox (registered trademark) 129, Ciba Irganox 1330, Ciba Irganox 1010, Ciba Cyanox (registered trademark) 1790, Ciba Irganox 3114, Ciga 31, Ciga etc. can be used.

  The content of the antioxidant is preferably 0.1 to 10 parts by weight, and more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the resin component.

(Additive)
In addition, the resin composition may contain additives such as acrylic, silicone, fluorine, and vinyl leveling agents and silane coupling agents as necessary.

  The silane coupling agent is not particularly limited. For example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltri Methoxysilane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropyl Triethoxy 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (triethoxy Propyl) tetrasulfide, 3-isocyanatopropyltriethoxysilane and the like, and may be used alone or in admixture of two or more. When the resin composition constituting the fixed resin layer 60 contains a silane coupling agent, there is an effect that adhesion to the semiconductor chip 11 and the support substrate 50 is improved.

(solvent)
Furthermore, the resin composition may contain a solvent.

  Examples of the solvent include, but are not limited to, hydrocarbons such as mesitylene, decalin, and mineral spirits, alcohols such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, and diglyme. / Ethers, ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone, etc./lactones, Examples include ketones such as cyclopentanone, cyclohexanone, methyl isobutyl ketone, 2-heptanone, and amides / lactams such as N-methyl-2-pyrrolidinone. It is, can be used singly or in combination of two or more of them. When the resin composition contains a solvent, it becomes easy to adjust the viscosity of the resin composition, and it becomes easy to form the fixed resin layer 60 containing the resin composition on the support substrate 50.

  Although content of the said solvent is not specifically limited, It is preferable that it is 5-98 weight% of the whole quantity of a resin composition, and it is more preferable that it is 10-95 weight%.

  In the present invention, the melt viscosity of the fixed resin layer 60 at 180 ° C. after irradiation with active energy rays is 0.01 to 100 Pa.s. s is preferably set, and the above-described various constituent materials contained in the resin composition, particularly the combination of the resin component and the activator, and the content thereof are set so as to be set within such a range. .

  If it is such a temporary fixing agent (resin composition), the fixed resin layer 60 can be made into a molten state by heating this to a temperature range of about 130 to 200 ° C. From the above, it is possible to make the electronic component arrangement sealing material cured product 80 have a melt viscosity to such an extent that it can be easily detached. As a result, the detachment (peeling) of the cured electronic component placement encapsulant 80 from the support substrate 50 may cause cracks or the like in the semiconductor chip 11 and the encapsulant layer 70 constituting the cured electronic component placement encapsulant 80. It can be easily performed without causing damage.

  The melt viscosity of the temporary fixing agent at 180 ° C. after irradiation with active energy rays is 0.01 to 100 Pa.s. s is preferable, but in particular, 0.1 to 10 Pa.s. It is preferably about s. Thereby, the effect mentioned above can be exhibited more notably.

  The melt viscosity at 180 ° C. before irradiation with active energy rays is not particularly limited, but is 100 to 10,000 Pa · s. s or so, preferably 100 to 1000 Pa.s. More preferably, it is about s. Thus, even when the fixed resin layer 60 is heated to, for example, about 180 ° C. when the electronic component placement sealing material cured product 80 is formed, the fixed resin layer 60 is sufficient to fix the semiconductor chip 11 to the support substrate 50. Therefore, it is possible to reliably prevent the positional deviation of the semiconductor chip 11 from the support substrate 50 when the electronic component arrangement sealing material cured product 80 is formed.

  Further, the melt viscosity of the fixed resin layer 60 at 180 ° C. before irradiation with active energy rays is expressed by A [Pa. s], and the melt viscosity of the fixed resin layer 60 at 180 ° C. after irradiation with active energy rays is B [Pa. s], A / B preferably satisfies the relationship of 100 to 10000, and more preferably satisfies the relationship of 200 to 1000. When A / B satisfies this relationship, the semiconductor chip 11 can be reliably fixed to the support substrate 50 by the fixing resin layer 60 when the electronic component arrangement sealing material cured product 80 is formed. When the cured stop material 80 is detached from the support substrate 50, the cured electronic component arrangement sealing material 80 can be easily detached from the support substrate 50.

The melt viscosity of the fixed resin layer 60 can be measured using a rheometer method.
Specifically, a temporary fixing agent solution is applied on a silicon substrate, dried on a hot plate at 120 ° C. for 300 seconds, and light from an ultra-high pressure mercury lamp as an active energy ray is 2000 mJ / cm ^{2 in} terms of wavelength 365 nm. After irradiation, a 50 μm-thick film made of a temporary fixing agent was peeled off from the silicon substrate, and the melt viscosity was measured with a rheometer (Haake RS150 type, manufactured by Thermo Fisher Scientific) (gap: 30 μm, heating rate: 10 ° C. / Min, measurement temperature range: 30 to 300 ° C., frequency: 1 Hz), and the melt viscosity at 180 ° C. can be obtained as a measured value.

Moreover, the irradiation of the active energy ray with respect to the fixed resin layer 60 is not particularly limited, but is preferably performed by irradiating light having a wavelength of 365 nm with 2000 mj / cm ² . By setting such conditions, a sufficient amount of active species such as acid or base can be generated from the active agent, and the melt viscosity of the resin component can be reliably reduced by the action of the active species. Therefore, it can be suitably used as a condition for the active energy rays applied to the fixed resin layer 60.

  [3] Next, the semiconductor chip 11 is disposed on the fixed resin layer 60, and the semiconductor chip 11 is fixed on the support substrate 50 via the fixed resin layer 60 (see FIG. 2C); Fixing process).

  Here, when the semiconductor chip 11 is disposed, the surface having the terminals (not shown) is disposed downward (the surface in contact with the fixed resin layer 60). Further, when the semiconductor chip 11 is arranged, it is necessary to arrange the semiconductor chip 11 precisely so that the wiring layer can be formed with high accuracy in a wiring layer forming process, which will be described later. Therefore, the method of arranging the semiconductor chip 11 is not particularly limited, but the semiconductor chip 11 can be precisely arranged by applying a flip chip bonder.

  The fixing of the semiconductor chip 11 to the fixing resin layer 60 is not particularly limited. When the fixing resin layer 60 is in a liquid state, it can be fixed only by pressure (including only the weight of the semiconductor chip 11). . Further, when the fixed resin layer 60 is solid, the semiconductor chip 11 can be fixed by appropriately heating and pressurizing as necessary. Although it does not necessarily limit as said heating temperature, 50-200 degreeC is preferable and 80-180 degreeC is especially preferable. The pressurization time is preferably 0.05 to 1 MPa, particularly preferably 0.1 to 0.8 MPa. Furthermore, the heating and pressurizing time is preferably 0.1 to 30 seconds, and particularly preferably 1 to 15 seconds. By setting the heating and pressurizing conditions in the above ranges, it is possible to both fix the semiconductor chip 11 reliably and prevent damage and deformation of the semiconductor chip 11.

  [4] Next, the sealing material layer 70 is formed so as to cover the gap between the adjacent semiconductor chips 11 and the semiconductor chip 11 with the sealing material (see FIG. 2D; sealing material layer forming step). .

  Here, covering the semiconductor chip 11 includes both the case where the semiconductor chip 11 is completely covered and the case where a part of the semiconductor chip 11 is covered, but the semiconductor chip 11 is completely covered. This is preferable because the reliability of the electronic device 30 is good.

  A method for forming the sealing material layer 70 with the sealing material is not particularly limited, and examples thereof include a transfer molding method, a compression molding method, an injection molding method, and the like. A compression molding method that hardly occurs is preferable. The molding temperature is not particularly limited, but is preferably 50 to 200 ° C, particularly preferably 80 to 180 ° C. The molding pressure is not particularly limited, but is preferably 0.5 to 12 MPa, and particularly preferably 1 to 10 MPa. Furthermore, the molding time is preferably 30 seconds to 15 minutes, and particularly preferably 1 to 10 minutes. By setting the molding temperature, pressure, and time within the above ranges, it is possible to prevent both occurrence of an unfilled portion of the sealing material and displacement of the semiconductor chip 11.

  The sealing material is not particularly limited, and a liquid sealing material or a solid sealing material can be used. As the resin composition for a sealing material constituting the sealing material, for example, those composed mainly of an epoxy resin, a curing agent, and an inorganic filler are preferably used. The encapsulant made of such a constituent material can encapsulate the semiconductor chip 11 with excellent adhesion, and can adjust the thermal expansion coefficient relatively easily.

  Hereinafter, although a liquid sealing material is demonstrated in detail, a liquid sealing material is not limited to this.

  Although it does not necessarily restrict | limit as a liquid sealing material which concerns on this invention, It is preferable to use an epoxy resin, an acid anhydride, an inorganic filler, and a hardening accelerator as an essential component. Further, the curing accelerator is more preferably a phosphonium salt type curing accelerator.

  The epoxy resin constituting the liquid sealing material is not particularly limited, but the molecular weight and structure are particularly limited as long as they have two or more epoxy groups in one molecule and are liquid at room temperature. It is not something.

  Examples of the epoxy resin constituting the liquid sealing material include novolak type epoxy resins such as phenol novolac type epoxy resins and cresol novolak type epoxy resins, bisphenol F type epoxy resins, N, N-diglycidylaniline, N, N-diglycidyl toluidine, diaminodiphenylmethane type glycidylamine, aromatic glycidylamine type epoxy resin such as aminophenol type glycidylamine, hydroquinone type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, Triphenolpropane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, naphtho Epoxy resin, naphthalene type epoxy resin, phenol aralkyl type epoxy resin having phenylene and / or biphenylene skeleton, epoxy resin such as aralkyl type epoxy resin such as naphthol aralkyl type epoxy resin having phenylene and / or biphenylene skeleton, vinylcyclohexene Aliphatic epoxy resins such as alicyclic epoxies such as dioxide, dicyclopentadiene oxide, and alicyclic diepoxy-adipade can be mentioned, and one or more of these can be used in combination.

  The epoxy resin constituting the liquid sealing material preferably includes a structure in which a glycidyl ether structure or a glycidylamine structure is bonded to an aromatic ring from the viewpoint of heat resistance, mechanical properties, and moisture resistance. It is preferable to limit the amount of the cyclic epoxy resin used from the viewpoint of reliability, particularly adhesiveness. These may be used alone or in combination of two or more. In the present invention, it is preferable that the epoxy resin is finally liquid at room temperature (25 ° C.), but even an epoxy resin that is solid at room temperature is dissolved in the liquid epoxy resin at room temperature, and as a result, in a liquid state I just need it.

  Examples of acid anhydrides constituting the liquid sealing material include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl- Examples include hexahydrophthalic anhydride, a mixture of 3-methyl-hexahydrophthalic anhydride and 4-methyl-hexahydrophthalic anhydride, tetrahydrophthalic anhydride, nadic anhydride, or methyl nadic anhydride.

  These are preferable because curing at a low temperature is quick and the glass transition temperature of the cured product of the sealing material is high. Moreover, since it is liquid at normal temperature and its viscosity is low, it is more preferable to use tetrahydrophthalic anhydride as a curing agent. In particular, these may be used alone or in combination of two or more.

  The amount of the acid anhydride is preferably 2 to 10 parts by weight, more preferably 5 to 7 parts by weight, based on 100 parts by weight of the total liquid sealing resin composition. When the compounding amount of the acid anhydride is less than the above lower limit, curability is deteriorated and productivity is lowered. And when it exceeds the said upper limit, moisture-proof reliability falls.

  The liquid sealing material may contain a curing agent other than an acid anhydride, and examples of the curing agent other than an acid anhydride include monomers, oligomers, and polymers that have a functional group that reacts with epoxy in one molecule. If you can, you can use this together. Examples include phenols such as phenol novolac resin, cresol novolac resin, dicyclopentadiene modified phenol resin, terpene modified phenol resin, triphenol methane type resin, phenol aralkyl resin (having phenylene skeleton, diphenylene skeleton, etc.), etc. 1 type or 2 types or more can be used in combination.

  As an inorganic filler which comprises a liquid sealing material, what is generally used for the sealing material can be used. Examples thereof include fused silica, crystalline silica, talc, alumina, silicon nitride and the like, and these may be used alone or in combination of two or more. Among these, fused silica, crystalline silica, and synthetic silica powder are preferable because the heat resistance, moisture resistance, strength, and the like of the resin composition can be improved.

  The shape of the inorganic filler is not particularly limited, but the shape is preferably spherical from the viewpoints of viscosity characteristics and flow characteristics.

  The content when the inorganic filler is fused silica is preferably 30% by weight or more and 90% by weight or less, more preferably 40%, in the total epoxy resin composition from the balance between moldability and solder crack resistance. % By weight or more and 85% by weight or less. If it is less than the lower limit value, the solder crack resistance with increasing water absorption rate is lowered, and if it exceeds the upper limit value, there may be a problem in the dispensing performance of the liquid sealing resin composition.

  When the inorganic filler is other than fused silica, the content is converted into the volume.

  Although the hardening accelerator which comprises a liquid sealing material is not necessarily limited, It is preferable that it is a phosphonium salt type hardening accelerator. Examples of the phosphonium salt type curing accelerator include, but are not limited to, a phosphonium salt type curing accelerator having a structure represented by the general formula (4) or (5).

（ただし、Ｒ７、Ｒ８、Ｒ９、Ｒ１０は芳香族もしくは複素環を有する１価の有機基または１価の脂肪族基であって、それらの内の少なくとも１つは、分子外に放出しうるプロトンを少なくとも１個有するプロトン供与体がプロトンを１個放出してなる基であり、これらは互いに同一であっても異なっていても良い。また、Ａｒは置換または無置換の芳香族基を表し、同一分子内の二つの酸素原子は、芳香族炭素位の隣接に位置する。ｎは２〜１２の整数を示す。）

(However, R7, R8, R9, and R10 are monovalent organic groups or monovalent aliphatic groups having an aromatic or heterocyclic ring, and at least one of them is a proton that can be released out of the molecule. Is a group formed by releasing one proton from a proton donor having at least one, and these may be the same or different from each other, Ar represents a substituted or unsubstituted aromatic group, (Two oxygen atoms in the same molecule are located adjacent to the aromatic carbon position. N represents an integer of 2 to 12.)

  By using a phosphonium salt curing accelerator having a structure represented by the general formula (4) or (5), improvement in adhesion between the liquid encapsulated cured material and the encapsulated electronic component, and a fixing resin The adhesion with the layer 60 can be improved.

  Examples of the curing accelerator having the structure represented by the general formula (4) include phosphonium salt type curing accelerators represented by the following formulas (6), (7), and (8). .

  Moreover, as a hardening accelerator which has a structure shown by General formula (5), the phosphonium salt type hardening accelerator shown by following formula (9), Formula (10), and Formula (11) can be mentioned.

  Among these phosphonium salt curing accelerators, a phosphonium salt curing accelerator represented by formula (7) or formula (11), which is excellent in balance between curability and adhesion, is preferable.

  The blending amount of the curing accelerator is preferably 0.1 parts by weight or more and 1.0 parts by weight or less, more preferably 0.3 parts by weight or more and 0 parts by weight or less with respect to 100 parts by weight of the total liquid sealing resin composition. .8 parts by weight or less. This is because if it is less than the lower limit, curing is slow and productivity is lowered, and if it exceeds the upper limit, storage stability is deteriorated.

  Furthermore, the blending ratio [(acid anhydride blending amount) / (curing accelerator blending amount)] of the acid anhydride and the curing accelerator is preferably 3 to 35, more preferably 5 to 30, and more preferably 10 to 20 Is particularly preferred. This is because when the blending ratio is less than the lower limit, storage stability is deteriorated, and when it exceeds the upper limit, curing is slow and productivity is deteriorated.

  As components that can be used other than the above, a release agent such as a silicone compound or wax as an antifoaming agent, or a low stress agent such as silicone rubber can be added as appropriate.

  In addition, although the manufacturing method of the liquid sealing material mentioned above is not necessarily limited, a planetary mixer, a three roll, an epoxy resin, an acid anhydride, an inorganic filler, a hardening accelerator, an additive, etc. It can be manufactured by performing defoaming treatment under vacuum after being dispersed and kneaded using a device such as a two-heat roll or a laika machine.

  Furthermore, although a solid sealing material is demonstrated in detail below, a solid sealing material is not limited to this.

  Examples of the epoxy resin constituting the solid sealing material include crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin; Novolak type epoxy resins such as novolak type epoxy resin, phenol novolak type epoxy resin, naphthol novolak type epoxy resin, etc .; phenylene skeleton-containing phenol aralkyl type epoxy resin, biphenylene skeleton containing phenol aralkyl type epoxy resin, phenylene skeleton containing naphthol aralkyl type epoxy resin, etc. Phenol aralkyl type epoxy resins; trifunctional epoxy resins such as triphenolmethane type epoxy resins and alkyl-modified triphenolmethane type epoxy resins Modified phenol type epoxy resins such as dicyclopentadiene-modified phenol type epoxy resins and terpene modified phenol type epoxy resins; heterocyclic ring-containing epoxy resins such as triazine nucleus-containing epoxy resins, and the like. They can be used in combination.

  Among these, as the epoxy resin, those represented by the following general formula (12) are particularly preferably used. Since the epoxy resin represented by the following general formula (12) is bifunctional, a cured product of an epoxy resin composition using the epoxy resin has a low crosslinking density, a low thermal expansion coefficient, and a solder reflow process, that is, Since the electronic device 30 is suitable for stress relaxation during heating, the magnitude of warpage during the process is reduced. Moreover, since the epoxy resin represented by the following general formula (12) is a crystalline low molecular weight resin, it has a low melt viscosity, and an epoxy resin composition containing this has excellent fluidity.

［式（１２）中、Ｘは、単結合、−Ｏ−、−Ｓ−、−Ｒ１２ＣＲ１２−の中から選択される基である。Ｒ１１は、炭素数１〜６のアルキル基であり、互いに同一であっても異なっていてもよい。また、ａは０〜４の整数である。Ｒ１２は、水素または炭素数１〜４のアルキル基であり、互いに同一であっても異なっていてもよい。］

[In Formula (12), X is a group selected from a single bond, —O—, —S—, and —R 12 CR 12 —. R11 is an alkyl group having 1 to 6 carbon atoms, and may be the same as or different from each other. Moreover, a is an integer of 0-4. R12 is hydrogen or an alkyl group having 1 to 4 carbon atoms, and may be the same as or different from each other. ]

  Among these, the epoxy resin represented by the general formula (12) is 4,4′-diglycidoxybiphenyl or 3,3 ′, 5,5′-tetramethyl-4,4′-diglycidoxy. Biphenyl and a molten mixture thereof are more preferably used. These compounds are excellent in the balance between workability and practicality, and can set the thermal expansion coefficient of the sealing material layer 70 low.

  Moreover, as a hardening | curing agent which comprises a solid sealing material, C2-C20 linear aliphatic diamine, metaphenylenediamine, paraffin, such as ethylenediamine, trimethylenediamine, tetramethylenediamine, and hexamethylenediamine, for example. Phenylenediamine, paraxylenediamine, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenylpropane, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylsulfone, 4,4′-diaminodicyclohexane, Aminos such as bis (4-aminophenyl) phenylmethane, 1,5-diaminonaphthalene, metaxylenediamine, paraxylenediamine, 1,1-bis (4-aminophenyl) cyclohexane, dicyanodiamide; aniline-modified resole resin, Dimethyle Resol type phenol resins such as tellurazole resin; Novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin; Phenol aralkyl such as phenylene skeleton-containing phenol aralkyl resin Resin; Phenol resin having condensed polycyclic structure such as naphthalene skeleton and anthracene skeleton; Polyoxystyrene such as polyparaoxystyrene; Alicyclic acid such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA) Aromatic acid anhydrides such as anhydride, trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA) Acid anhydrides containing, etc .; polymercaptan compounds such as polysulfides, thioesters, thioethers; isocyanate compounds such as isocyanate prepolymers, blocked isocyanates; and organic acids such as carboxylic acid-containing polyester resins. Two or more kinds can be used in combination.

  Among these, as the curing agent used for the constituent material of the sealing material layer 70, a compound having at least two phenolic hydroxyl groups in one molecule is preferably used. Examples of the curing agent include novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin; resol type phenol resin; polyoxystyrene such as polyparaoxystyrene; phenylene skeleton-containing phenol. Examples thereof include aralkyl resins and biphenylene skeleton-containing phenol aralkyl resins. By selecting such a compound, the thermal expansion coefficient of the sealing material layer 70 can be set low. These compounds are excellent compounds from the viewpoints of moisture resistance and reliability.

  Further, as the curing agent having at least two phenolic hydroxyl groups in one molecule, it is particularly preferable to use a phenol resin represented by the following general formula (13). The basic resin of the phenol resin represented by the following general formula (13) has the structure of a novolac type phenol resin and a triphenolmethane type phenol resin. By having the novolac type phenol resin as a basic skeleton, the distance between the cross-linking points of the resin skeleton is short in terms of structure, and it has the effect of exhibiting good curability and moldability. Moreover, since it has three or more hydroxyl groups in one molecule by having triphenolmethane type phenol resin as a basic skeleton, the crosslink density is high. Tg has an effect that the linear expansion coefficient is small and the strength can be high. Therefore, the resin composition using the phenol resin represented by the following general formula (13) has excellent moldability with good curability, and has thermal expansion and contraction after molding / curing and heat treatment. Since it is relatively small, the amount of warpage in the electronic device 30 can be reduced.

［式（１３）中、Ｒ１３、Ｒ１４、Ｒ１５は、炭素数１〜４のアルキル基から選択される基であり、互いに同一であっても、異なっていてもよい。ｂは０〜３の整数、ｃは０〜４の整数、ｄは０〜３の整数である。ｍ、ｎはモル比を表し、０＜ｍ＜１、０＜ｎ＜１で、ｍ＋ｎ＝１である。］

[In Formula (13), R13, R14, and R15 are groups selected from alkyl groups having 1 to 4 carbon atoms, and may be the same as or different from each other. b is an integer of 0 to 3, c is an integer of 0 to 4, and d is an integer of 0 to 3. m and n represent molar ratios, where 0 <m <1, 0 <n <1, and m + n = 1. ]

  The molar ratio (m / n) between m and n in the general formula (13) is preferably 1/5 to 5/1, and more preferably 1/2 to 2/1. . Thereby, the effect acquired by including both a novolak-type phenol resin and a novolak-type phenol resin can be exhibited synergistically.

  Specific examples of the phenol resin represented by the general formula (13) include those represented by the following formula (14).

［ただし、式（１４）中、ｍ、ｎはモル比を表し、０＜ｍ＜１、０＜ｎ＜１で、ｍ＋ｎ＝１である。］

[In the formula (14), m and n represent molar ratios, and 0 <m <1, 0 <n <1, and m + n = 1. ]

  Examples of the inorganic filler contained in the sealing material layer 70 include silica such as fused crushed silica, fused spherical silica, crystalline silica, and secondary agglomerated silica; alumina; titanium white; aluminum hydroxide; talc; clay; Mica; glass fiber and the like can be mentioned, and one or more of these can be used in combination. Among these, fused spherical silica is particularly preferable. Thereby, the thermal expansion coefficient of the sealing material layer 70 can be set low.

  In addition, it is preferable that the particle shape is infinitely spherical. Furthermore, the inorganic filling amount can be increased by mixing particles having different particle sizes, but the particle size is 0.01 μm or more and 150 μm or less in consideration of the filling property to the gap of the semiconductor chip 11. It is preferable that

  Further, the resin composition constituting the encapsulant layer 70 includes, in addition to the epoxy resin, the curing agent and the inorganic filler, each of two or more adjacent carbon atoms constituting the silane coupling agent and the aromatic ring. A compound having a hydroxyl group bonded thereto and a curing accelerator may be contained.

  Although it does not specifically limit as a silane coupling agent, For example, an epoxy silane, an aminosilane, a ureidosilane, a mercaptosilane etc. are mentioned, Among these, it can use combining 1 type (s) or 2 or more types. Since such a silane coupling agent is contained in the resin composition, a reaction occurs between the epoxy resin and the inorganic filler, so that the interface strength between the epoxy resin and the inorganic filler can be improved.

  Examples of the epoxy silane include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, and β- (3,4 epoxycyclohexyl) ethyltrimethoxysilane. Etc. Examples of aminosilane include γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl) γ-aminopropylmethyldimethoxy. Silane, N-phenyl γ-aminopropyltriethoxysilane, N-phenyl γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (aminohexyl) 3-amino Examples thereof include propyltrimethoxysilane and N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane, etc. Examples of ureidosilane include γ-ureidopropyltriethoxysilane, hexamethyldimethane. Such as silazane, and mercaptosilane Examples thereof include γ-mercaptopropyltrimethoxysilane.

  The silane coupling agent is synergistic with a compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring described later (hereinafter, such a compound may be referred to as a “hydroxyl-bonded compound”). Due to the effect, the resin composition has the effect of lowering the viscosity of the resin composition and improving the fluidity. Therefore, when the hydroxyl group-containing compound is contained in the resin composition, the effect obtained by adding the hydroxyl group-bonded compound is sufficiently obtained. In order to exhibit, it is preferable to include a silane coupling agent. Thereby, even when a relatively high viscosity resin is blended in a large amount or when a large amount of inorganic filler is blended, sufficient fluidity can be exhibited as a resin composition constituting the sealing material layer 70. .

  In addition, the compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting the aromatic ring (hydroxyl-bonded compound) is not particularly limited, but for example, a compound represented by the following general formula (15), The compound etc. which are represented by General formula (16) are mentioned. The hydroxyl group-bonded compound may have a substituent other than the hydroxyl group.

［式（１５）中、Ｒ１６、Ｒ２０は、いずれか一方が水酸基であり、一方が水酸基の場合、他方は水素、水酸基または水酸基以外の置換基から選ばれる基である。Ｒ１７、Ｒ１８、Ｒ１９は、水素、水酸基または水酸基以外の置換基から選ばれる基であり、互いに同一であっても、異なっていてもよい。］

[In the formula (15), when one of R16 and R20 is a hydroxyl group and one is a hydroxyl group, the other is a group selected from hydrogen, a hydroxyl group or a substituent other than a hydroxyl group. R17, R18, and R19 are groups selected from hydrogen, a hydroxyl group, or a substituent other than a hydroxyl group, and may be the same as or different from each other. ]

［式（１６）中、Ｒ２１、Ｒ２７は、いずれか一方が水酸基であり、一方が水酸基の場合、他方は水素、水酸基または水酸基以外の置換基から選ばれる基である。Ｒ２２、Ｒ２３、Ｒ２４、Ｒ２５、Ｒ２６は水素、水酸基または水酸基以外の置換基から選ばれる基であり、互いに同一であっても、異なっていてもよい。］

[In the formula (16), when one of R21 and R27 is a hydroxyl group and one is a hydroxyl group, the other is a group selected from hydrogen, a hydroxyl group or a substituent other than a hydroxyl group. R22, R23, R24, R25, and R26 are groups selected from hydrogen, a hydroxyl group, or a substituent other than a hydroxyl group, and may be the same as or different from each other. ]

  Specific examples of the compound represented by the general formula (15) include catechol, pyrogallol, gallic acid, gallic acid ester and derivatives thereof represented by the following formula (17). Specific examples of the compound represented by the general formula (16) include 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene represented by the following formula (18), and derivatives thereof. These compounds may be used individually by 1 type, and may be used in combination of 2 or more type. Of these, compounds whose main skeleton is a naphthalene ring in terms of ease of control of fluidity and curability and low volatility (that is, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof) Is more preferably selected.

  Further, the curing accelerator is not particularly limited. For example, diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof; amines such as tributylamine and benzyldimethylamine Compounds; Imidazole compounds such as 2-methylimidazole; Organic phosphines such as triphenylphosphine and methyldiphenylphosphine; Tetraphenylphosphonium / tetraphenylborate, Tetraphenylphosphonium / tetrabenzoic acid borate, Tetraphenylphosphonium / tetranaphthoic acid borate Tetrasubstituted phosphonium tetrasubstituted borate such as tetraphenylphosphonium tetranaphthyloxyborate, tetraphenylphosphonium tetranaphthyloxyborate, etc. Triphenylphosphine or the like adduct non the like, and these can be used singly or in combination of two or more of them.

  In addition to the constituent materials described above, the resin composition for a sealing material may further include, if necessary, a colorant such as carbon black; a natural wax such as carnauba wax, a synthetic wax, a higher fatty acid or a metal salt thereof, Contains release agents such as paraffin and polyethylene oxide; low stress agents such as silicone oil and silicone rubber; ion scavengers such as hydrotalcite; flame retardants such as aluminum hydroxide; and various additives such as antioxidants May be.

  Thereafter, the encapsulant resin composition is molded and cured by a molding method such as transfer molding, compression molding, injection molding, or the like to obtain a sealing material. Although it does not specifically limit as a shaping | molding method, From a viewpoint of preventing the position shift and peeling of an electronic component, a compression mold is preferable.

  [5] Next, the encapsulant layer 70 is heated and cured to obtain an electronic component arrangement encapsulant cured product 80 in which the semiconductor chip 11 is disposed (see FIG. 2D; encapsulant curing step). ).

  Here, the electronic component placement sealing material cured product 80 is provided on the support substrate 50, and a plurality of semiconductor chips 11 are sealed so as to cover them with a cured product of the sealing material layer 70 at intervals. It has been stopped.

  The conditions for curing the sealing material layer 70 are not particularly limited, but the heating temperature is set to a temperature range in which the fixed resin layer 60 does not melt. Thereby, formation of the electronic component arrangement sealing material cured product 80 can be performed without causing a positional shift of the semiconductor chip 11. Specifically, the heating temperature is preferably 100 to 200 ° C, particularly preferably 120 to 190 ° C. The heating time is not particularly limited, but is preferably 30 minutes to 8 hours, and particularly preferably 1 to 6 hours. By setting the heating temperature and the heating time in the above ranges, it is possible to prevent the fixed resin layer 60 from being decomposed and to obtain the highly reliable electronic device 30.

  In the formation of the electronic component placement sealing material cured product 80 in the step [4] and the step [5], the resin composition is used in the fixed resin layer forming step in the step [2] to form the film. Since the fixed resin layer 60 having a uniform thickness and a smooth surface and having an excellent accuracy is formed, the electronic component placement sealing material cured product 80 can be formed with an excellent accuracy.

  Moreover, in the formation process of the electronic component arrangement sealing material cured product 80 in the process [4] and the process [5], the fixed resin layer 60 is heated and undergoes a temperature history. Irradiation of active energy rays to the fixed resin layer 60 is not performed, and the fixed resin layer 60 maintains a high melt viscosity. Therefore, there is no separation between the encapsulating material layer 70 and the electronic component arrangement encapsulating material cured product 80 and the support substrate 50, and no positional deviation of the semiconductor chip 11 on the support substrate 50. Since the cured product 80 can be formed, the electronic component placement sealing material cured product 80 can be formed with excellent dimensional accuracy.

  As described above, in the present invention, the melt viscosity at 180 ° C. before irradiation with active energy rays is preferably 0.01 to 100 Pa.s. s. Thus, when the melt viscosity at 180 ° C. is within the above range, the effect can be exhibited more remarkably.

  [6] Next, after irradiating the fixed resin layer 60 with active energy rays, the fixed resin layer 60 is heated and melted to peel the cured electronic component placement sealing material 80 from the support substrate 50 (peeling step). ).

Hereinafter, this step [6] will be described in detail.
[6-1] First, as shown in FIG. 2 (e), the fixed resin layer 60 is irradiated with active energy rays through the support substrate 50.

  Thereby, energy is imparted to the active agent contained in the resin composition that is a constituent material of the fixed resin layer 60, and as a result, active species such as acid or base are generated from the active agent. Due to the action, the melt viscosity of the resin component when heated is lowered.

  Moreover, it is although it does not specifically limit as an active energy ray, For example, it is preferable that it is a light beam with a wavelength of about 200-500 nm, and it is more preferable that it is a light beam with a wavelength of about 350-400 nm.

Further, the irradiation amount of the active energy ray is not particularly limited, and is preferably about 1 to 2,000 mJ / cm ^2, more preferably about 10~1000mj / cm ^2.

  By setting the conditions for irradiation with active energy rays as described above, the melt viscosity at 180 ° C. after irradiation with active energy rays is 0.01 to 100 Pa.s. A sufficient amount of active species to be s can be reliably generated from the active agent.

  [6-2] Next, as shown in FIG. 2 (f), the fixed resin layer 60 is heated to bring the fixed resin layer 60 into a molten state. It peels from 50 (refer FIG.2 (g)).

  Here, in the present invention, since the fixed resin layer 60 is irradiated with active energy rays prior to the heating of the fixed resin layer 60, the melt viscosity of the resin component is changed to the active energy rays by heating the fixed resin layer 60. More preferably, the melt viscosity at 180 ° C. after irradiation of the active energy ray with respect to the fixed resin layer 60 is 0.01 to 100 Pa.s. s.

  Therefore, the heating temperature for bringing the fixed resin layer 60 into a molten state can be set relatively low. Specifically, the melt viscosity at 180 ° C. after irradiation with active energy rays is 0.01 to 100 Pa.s. When it is set to s, it becomes possible to set the said heating temperature to about 130-200 degreeC. Therefore, alteration and deterioration of the semiconductor chip 11 and the sealing material layer 70 due to this heating can be suppressed or prevented accurately, and the time required for bringing the fixed resin layer 60 into a molten state can be shortened. it can.

  The heating time is not particularly limited, but is preferably 30 seconds to 60 minutes, and particularly preferably 1 to 30 minutes. By making heating time into the said range, it can prevent effectively that the fixed resin layer 60 is fuse | melted reliably, and the semiconductor chip 11 and the sealing material layer 70 will thermally deteriorate.

  In addition, the method of peeling the electronic component placement sealing material cured product 80 from the support base material is not particularly limited, but the method of peeling perpendicularly to the surface of the support substrate 50, the surface of the support substrate 50 For example, a method of sliding and peeling in a horizontal direction, a method of floating and peeling the cured electronic component arrangement sealing material 80 from the support substrate 50, and the like.

  [6-3] Next, when the fixed resin layer 60 adheres to the surface of the cured electronic component arrangement sealing material 80 after the electronic component arrangement sealing material cured product 80 is peeled off, the remaining fixed resin layer 60 is washed.

  That is, the residue (residue) of the fixed resin layer 60 remaining on the surface of the electronic component arrangement sealing material cured product 80 on the side where the semiconductor chip 11 is sealed is removed.

  Even when the fixed resin layer 60 adheres to the surface of the electronic component placement sealing material cured product 80, in the present invention, since the fixed resin layer 60 is configured as described above, plasma treatment, chemical treatment The residue can be easily removed by a technique such as polishing. As a result, the reliability of the obtained electronic device can be further increased.

  As a method for removing the residue, oxygen plasma treatment, chemical treatment such as IPA, acetone, γ-butyrolactone, and PEGMEA, which have a low environmental load, are particularly preferable.

  In addition, although this embodiment demonstrated embodiment which performs a peeling process after a sealing material hardening process, you may implement a sealing material hardening process after a peeling process.

  By passing through the above processes, the electronic component arrangement | positioning sealing material hardened | cured material 80 peeled from the support substrate 50 can be obtained. In other words, the steps [1] to [6] constitute the first embodiment of the electronic device manufacturing method of the present invention.

  Next, a wiring layer forming step for forming a wiring layer on the electronic component placement sealing material cured product 80 will be described with reference to FIGS.

  [7] Next, the obtained electronic component disposition sealing material cured product 80 is disposed with the surface (surface in contact with the fixed resin layer 60) 41 on which the semiconductor chip 11 has terminals facing upward (FIG. 3). (See (a).)

  [8] Next, the 1st insulating layer 90 is formed in the surface 41 which has the terminal of the electronic component arrangement | positioning sealing material hardened | cured material 80 (refer FIG.3 (b)).

  The first insulating layer 90 is not particularly limited, but is preferably an organic resin composition. For example, polyamide resin such as polyimide resin or polybenzoxazole resin, polybenzocyclobutene resin, polynorbornene resin, or the like. The photosensitive resin composition which has as a main component can be mentioned. Among these, polyimide resin and polybenzoxazole, which are excellent in sensitivity and resolution during exposure and development, mechanical properties such as glass transition temperature and elastic modulus, and adhesion to the cured electronic component placement sealant 80 A positive photosensitive resin composition mainly composed of a polyamide resin such as a resin is preferred.

  The method of forming the resin composition on the surface 41 having terminals of the electronic component placement sealing material cured product 80 is not particularly limited, but a spin coating method using a spinner, and a spray coating using a spray coater. It can apply | coat by using a method, a dipping method, a printing method, a roll coating method, etc., and can form by pre-baking and volatilizing the solvent contained in the said resin composition. At this time, the viscosity of the resin composition can be adjusted by appropriately diluting with a solvent or the like according to the forming method.

  The amount of application is not particularly limited, but it is preferable to apply so that the final film thickness is 0.1 to 30 μm. If the film thickness is less than the lower limit value, it will be difficult to sufficiently function as the insulating film of the electronic component placement sealing material cured product 80. If the film thickness exceeds the upper limit value, a fine processing pattern will be obtained. Not only becomes difficult, but processing takes time and throughput is reduced. The pre-baking temperature is not particularly limited, but is preferably 50 to 150 ° C, and preferably 60 to 130 ° C.

  [9] Next, an opening 91 is formed by exposure and development at a position corresponding to the terminal (not shown) of the semiconductor chip 11 of the first insulating layer 90 (see FIG. 3C).

  Here, a mechanism for forming the opening 91 by exposing and developing the positive photosensitive resin composition will be described. By exposing (exposing) actinic radiation to the coating film on the cured electronic component sealing material 80 from above the mask with an exposure device such as a stepper, the exposed portion (hereinafter, exposed portion) is not exposed. A portion (hereinafter, unexposed portion) is formed. The diazoquinone compound present in this unexposed area is insoluble in the developer, and the polyamide resin such as polyimide resin and polybenzoxazole resin interacts with the diazoquinone compound, so that it is more resistant to the developer. become. On the other hand, the diazoquinone compound present in the exposed area undergoes a chemical change by the action of actinic radiation, becomes soluble in the developer, and promotes dissolution of the resin. By utilizing the difference in solubility between the exposed portion and the unexposed portion to dissolve and remove the exposed portion, the opening 91 having only the unexposed portion can be produced.

  The exposure method is not particularly limited, but a mask having an opening at a position corresponding to the opening 91 is aligned with the first insulating layer 90, and X-rays, electron beams, ultraviolet rays, visible light are aligned. It can be performed by irradiating actinic rays such as. The wavelength of the actinic radiation is preferably 200 to 500 nm, and specifically i-line or g-line is preferable.

Next, the opening 91 can be obtained by dissolving and removing the exposed portion with a developer. Although it does not necessarily limit as said developing solution, A solvent and alkaline aqueous solution can be mentioned, Alkaline aqueous solution with few improperness with respect to an environment is preferable. The alkaline aqueous solution is not particularly limited, but includes inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, aqueous ammonia, ethylamine, n-propylamine and the like. Primary amines, secondary amines such as diethylamine and di-n-propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, An aqueous solution of an alkali such as a quaternary ammonium salt such as tetraethylammonium hydroxide and an aqueous solution in which an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant is added thereto can be suitably used. it can
Further, as a developing method, methods such as spraying, paddle, dipping, and ultrasonic waves are possible.

  [10] Next, a conductive layer 92 is formed so as to be connected to the first insulating layer 90, the wall surface of the opening 91, and the terminal of the semiconductor chip 11 (see FIG. 3D).

  A method for forming the conductive layer 92 is not particularly limited, but a metal such as Cr, Ti, or Cu can be formed by a sputtering method or the like.

  [11] Next, a resist layer 100 having an opening at a portion where the conductor 93 is to be formed is formed (see FIG. 3E).

  The resist for forming the resist layer 100 is not particularly limited, and examples thereof include a liquid or film photosensitive resist.

  In the case of a liquid photosensitive resist, a liquid photosensitive resist is formed by a method such as screen printing so as to cover the entire surface of the conductive layer 92, and then exposed through a mask having an opening in a portion where the conductor 93 is formed. Then, the resist layer 100 is formed by developing with a developer. In the case of a film-like photosensitive resist, a film-like photosensitive resist is formed by a technique such as laminating so as to cover the entire surface of the conductive layer 92, and then the resist layer 100 is formed in the same manner as in the case of a liquid resist. .

  [12] Next, a conductor 93 is formed in the opening of the resist layer 100 by plating (see FIG. 3F).

  The metal constituting the conductor 93 is not particularly limited, and copper that has a small electric resistance and can cope with a high-speed signal is preferable.

  [13] Next, the resist layer 100 is removed, and the conductive layer 92 other than the portion where the conductor 93 is formed is removed (see FIG. 4A).

  A method for removing the resist layer 100 and the conductive layer 92 is not particularly limited, but a residue of the conductive layer 92 hardly remains in a portion where the conductor 93 is not formed, such as reactive ion etching (RIE). Can be removed. When the removal is performed by a method such as reactive ion etching, the conductor 93 is also slightly reduced in thickness, but the conductor 93 is formed to be sufficiently thicker than the conductor layer 92. It will never be removed.

  [14] Next, the second insulating layer 110 is formed so as to cover the conductor 93 (see FIG. 4B).

  Although the material which comprises the 2nd insulating layer 110, and the formation method of the 2nd insulating layer 110 are not necessarily limited, the thing similar to the case of the 1st insulating layer 90 can be used.

  [15] Next, an opening 111 is formed in a portion of the second insulating layer 110 where the bump 18 is to be formed (see FIG. 4C).

  A method for forming the opening 111 in the second insulating layer 110 is not particularly limited, but a method similar to that for forming the opening 91 in the first insulating layer 90 can also be used.

  [16] Next, bumps 18 are formed in the openings 111 of the second insulating layer 110 (see FIG. 4D).

  The material of the bump 18 is not particularly limited, but tin (Sn), lead (Pb), silver (Ag), bismuth (Bi), indium (In), zinc (Zn), nickel (Ni). An alloy of at least two metals selected from the group consisting of antimony (Sb), iron (Fe), aluminum (Al), gold (Au), germanium (Ge), and copper (Cu), or simple tin It is preferable to become. Of these, Sn-Pb alloy, Sn-Bi alloy which is lead-free solder, Sn-Ag-Cu alloy, Sn-In alloy, Sn-Ag alloy are considered in consideration of melting temperature and mechanical properties. More preferably, it is made of an alloy containing Sn.

  A method for forming the bump 18 is not particularly limited, but the paste containing Sn as a main component and a flux as a main component is applied to the opening 111 of the second insulating layer 110 by a method such as screen printing. A method of forming by applying and then passing through a solder reflow apparatus, or placing a solder ball made of an alloy containing Sn in the opening 111 of the second insulating layer 110, and then applying a flux to the solder ball Then, a method of forming by passing through a solder reflow apparatus, and the like can be mentioned.

  By passing through the above processes, a wiring layer can be formed in the electronic component arrangement sealing material cured product 80.

  Next, a process of obtaining the electronic device 30 by dividing the electronic component placement sealing material cured product 80 on which the wiring layer is formed will be described with reference to FIG.

  [17] The step of dividing the electronic component placement sealing material cured product 80 includes dividing the electronic component placement sealing material cured product 80 formed with the bumps 18 obtained in the step [16] to obtain an electronic device. 30 is obtained (this is a drawing process (see FIGS. 4D and 4E)).

  The electronic component arrangement sealing material cured product 80 may be divided for each semiconductor chip 11 or may be divided in units of a plurality of semiconductor chips 11. By dividing the plurality of semiconductor chips 11 in units, the semiconductor chip 11 having a plurality of functions can be arranged in one electronic device 30, so that the electronic device 30 can be enhanced in function.

  A method of dividing the electronic component placement sealing material cured product 80 is not particularly limited, but can be divided by a technique such as laser or dicing saw. Among these, a method using a dicing saw that can be easily divided is preferable.

  Since the electronic device 30 obtained in this manner can route the wiring outside the outer edge of the semiconductor chip 11 and increase the number of input / output wirings, the electronic device 30 can be highly functionalized. it can. Further, when the semiconductor chip 11 is fixed to the support substrate 50, the fixed resin layer 60, which is melted by irradiation with active energy rays, is applied, and thus the electronic component placement sealing material cured product 80 is peeled off. The heating temperature at the time can be set low, and the alteration / deterioration of the semiconductor chip 11 and the sealing material layer 70 can be accurately suppressed or prevented, so that the highly reliable electronic device 30 can be provided. .

  Through the steps as described above, the divided (divided) electronic device 30 can be formed.

  In the present embodiment, in the electronic device 30 formed by being divided, the sealing portion 13 is divided by the divided sealing material layer 70, and the first insulating layer 90 is divided by the divided first insulating layer 90. 14, the second insulating layer 17 is constituted by the divided second insulating layer 110, and the via 15 and the conductor layer 16 are constituted by the conductor 93 integrally formed.

  Next, a process of mounting the divided electronic device 30 on the substrate will be described with reference to FIG.

  [18] The step of mounting the electronic device 30 on the substrate is a step of connecting the bumps 18 of the electronic device 30 and the wiring circuit 19 formed on the interposer 20 (see FIG. 1).

The method of connecting the bump 18 and the wiring circuit 19 is not particularly limited. However, when a solder layer is provided on at least the surface of the bump 18, a flux is applied to the bump 18, and then the bump 18 and the wiring circuit 19 are connected. The electronic device 30 can be manufactured by placing the electronic device 30 on the interposer 20 so as to correspond, and then passing through the solder reflow device. At this time, the electronic device 30 and the interposer 20 are electrically connected by the metal bonding of the bump 18 and the wiring circuit 19.
Through the steps as described above, the electronic device package 10 can be manufactured.

  In the present embodiment, the case where the semiconductor chip 11 is sealed with the sealing material layer 70 has been described. However, not only active elements such as the semiconductor chip 11 but various electronic components may be sealed. Examples of other electronic components include passive elements such as capacitors and filters.

<< Second Embodiment >>
Next, a second embodiment of the electronic device package manufacturing method for manufacturing the electronic device package 10 will be described.

  That is, in the second embodiment of the manufacturing method of the electronic device package 10, there is a gap between the fixing resin layer forming step of providing the fixing resin layer on the surface of the support base material and the adjacent ones on the fixing resin layer. An electronic component fixing step in which a plurality of electronic components are arranged so as to be formed, and the electronic components are fixed on the support base material via the fixing resin layer, and the electronic components are covered with a sealing material and fixed A sealing material layer forming step for forming a sealing material layer on the resin layer and the electronic component; and the sealing material is cured by heating the sealing material, and is supported by the support substrate, Manufacturing an electronic device having a cured electronic component arrangement sealing material in which an electronic component is arranged, and a sealing material curing and peeling step in which the cured electronic component arrangement sealing material is peeled from the support substrate Method of sealing material curing and peeling step The electronic component arrangement sealing material is cured by curing the sealing material by heating the sealing material, and then irradiating the fixed resin layer with active energy rays to melt the fixing resin layer. The object is peeled off from the support substrate.

  Hereinafter, the method for manufacturing the electronic device package 10 according to the second embodiment will be described. However, the description will focus on differences from the method for manufacturing the electronic device package 10 according to the first embodiment, and the same matters will be described. Omitted.

  In the first embodiment described above, after the sealing material curing process is performed, the peeling process is performed. In this embodiment, the sealing material curing and peeling process in which the sealing material curing process and the peeling process are performed simultaneously. Except for carrying out the steps, this is the same as in the first embodiment.

  That is, in 2nd Embodiment, the sealing material hardening process [5] which hardens the sealing material layer 70 and the peeling process [6] which peels the electronic component arrangement | positioning sealing material hardened | cured material 80 are performed simultaneously. After the active energy ray is irradiated to the fixed resin layer 60 to reduce the melt viscosity of the fixed resin layer 60, heating is performed to cure the sealing material layer 70. By setting this step to have such a configuration, the sealing material layer 70 can be cured and the fixing resin layer 60 can be melted at the same time. That is, the curing of the sealing material layer 70 and the peeling of the electronic component placement sealing material cured product 80 can be performed simultaneously.

  As a result, since the manufacturing process of the electronic device package 10 can be shortened, productivity can be improved and the electronic device package 10 can be manufactured at low cost.

  Under the present circumstances, 100-200 degreeC is preferable and the temperature which heats the sealing material layer 70 and the fixed resin layer 60 has especially preferable 120-190 degreeC. The heating time is not particularly limited, but is preferably 30 minutes to 8 hours, and particularly preferably 1 to 6 hours. By setting the heating temperature and the heating time in the above ranges, curing of the sealing material layer 70 and melting of the fixed resin layer 60 after active energy ray irradiation can be performed reliably.

  Although the electronic device manufacturing method, the electronic device, the electronic device package manufacturing method, and the electronic device package of the present invention have been described based on the illustrated embodiments, the present invention is not limited thereto.

  For example, each constituent material included in the resin composition used in the method for manufacturing an electronic device and the method for manufacturing an electronic device package of the present invention can be replaced with any material that can exhibit the same function, or Arbitrary configurations can be added.

  Moreover, arbitrary steps may be added to the method for manufacturing an electronic device and the method for manufacturing an electronic device package of the present invention as necessary.

DESCRIPTION OF SYMBOLS 10 Electronic device package 11 Semiconductor chip 12 Functional surface 13 Sealing part 14 First insulating layer 15 Via 16 Conductor layer 17 Second insulating layer 18 Bump 19 Wiring circuit 20 Interposer 30 Electronic device 41 Surface 50 having terminal 50 Support substrate 60 Fixed resin layer 70 Sealing material layer 80 Electronic component placement sealing material cured product 90 First insulating layer 91 Opening portion 92 Conductive layer 93 Conductor 100 Resist layer 110 Second insulating layer 111 Opening portion

Claims (15)

A fixed resin layer forming step of providing a fixed resin layer on the surface of the support substrate;
An electronic component in which a plurality of electronic components are arranged on the fixed resin layer so that a gap is formed between adjacent ones, and the electronic component is fixed on the support substrate via the fixed resin layer A fixing process;
A sealing material layer forming step of covering the electronic component with a sealing material and forming a sealing material layer on the fixed resin layer and the electronic component;
The encapsulant curing step of curing the encapsulant by heating the encapsulant and obtaining a cured electronic component arrangement encapsulant that is supported by the support base material and on which the electronic components are arranged, and ,
A peeling step of peeling the electronic component placement sealing material cured product supported by the support base material from the support base material,
In the peeling step, after the fixed resin layer is irradiated with active energy rays, the fixed resin layer is heated and melted to peel off the electronic component placement sealing material from the support substrate. A method for manufacturing an electronic device.   The method for manufacturing an electronic device according to claim 1, wherein a temperature at which the sealing material is heated in the sealing material curing step is lower than a temperature at which the fixing resin layer is melted in the peeling step.   The method for manufacturing an electronic device according to claim 1, wherein a temperature at which the fixing resin layer is melted in the peeling step is 130 to 200 ° C. 3.   The melt viscosity at 180 ° C. after irradiation of the active energy ray of the fixed resin layer is 0.01 to 100 Pa.s. The method for manufacturing an electronic device according to claim 1, wherein the electronic device is s. A fixed resin layer forming step of providing a fixed resin layer on the surface of the support substrate;
An electronic component in which a plurality of electronic components are arranged on the fixed resin layer so that a gap is formed between adjacent ones, and the electronic component is fixed on the support substrate via the fixed resin layer A fixing process;
A sealing material layer forming step of covering the electronic component with a sealing material and forming a sealing material layer on the fixed resin layer and the electronic component;
The encapsulant is cured by heating the encapsulant and is supported by the support base material to obtain a cured electronic component arrangement encapsulant in which the electronic components are arranged. It is a manufacturing method of an electronic device having a sealing material curing and peeling step for peeling a cured cured material from the support substrate,
In the sealing material curing and peeling step, the fixed resin layer is irradiated with an active energy ray, and then the fixed resin layer is melted by the heating so that the cured electronic component arrangement sealing material is the support base material. A method for manufacturing an electronic device, comprising:   The method for manufacturing an electronic device according to claim 5, wherein a temperature at which the fixing resin layer is melted in the sealing material curing and peeling step is 130 to 200 ° C. 6.   The melt viscosity at 180 ° C. after irradiation of the active energy ray of the fixed resin layer is 0.01 to 100 Pa.s. The method for manufacturing an electronic device according to claim 5, wherein the electronic device is s.   Further, a wiring layer forming step of forming a wiring layer on a surface of the electronic component placement sealing material cured product on which the electronic component is placed, and obtaining a cured electronic component placement sealing material on which the wiring layer is formed. A method for manufacturing an electronic device according to claim 1.   Furthermore, the electronic component placement encapsulating material cured product on which the wiring layer was formed was divided into pieces, and the electronic component placement encapsulant cured product on which the wiring layer was formed was separated into pieces. The method for manufacturing an electronic device according to claim 8, further comprising an individualization step for obtaining the electronic component arrangement sealing material cured product.   The said fixing resin layer contains the resin composition containing the resin component which melt viscosity falls in presence of an acid or a base, and the activator which generate | occur | produces an acid or a base by irradiation of the said active energy ray. 10. A method for manufacturing an electronic device according to any one of 9 above.   The method for manufacturing an electronic device according to claim 10, wherein the resin component is a polycarbonate-based resin.   The method for manufacturing an electronic device according to claim 11, wherein the polycarbonate resin includes at least two cyclic bodies in a carbonate constituent unit.   An electronic device manufactured by the method for manufacturing an electronic device according to claim 1.   10. A method of manufacturing an electronic device package, comprising: a mounting step of mounting the individualized electronic component arrangement sealing material cured product according to claim 9 on a substrate.   An electronic device package manufactured by the method for manufacturing an electronic device package according to claim 14.

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