JP2011195742A - Liquid resin composition, semiconductor package, and method for manufacturing semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a liquid sealing resin composition which suppresses warp of a pseudo wafer causing degradation in the productivity of a wafer level package, and to provide a semiconductor package manufactured by using the liquid sealing resin composition.SOLUTION: The liquid resin composition contains (A) an epoxy resin, (B) an acid anhydride, (C) an inorganic filler, (D) a curing accelerator, and (E) a low stress material, wherein the solid form component is contained in an amount of 80-90 wt.% with respect to the whole liquid resin composition, and wherein the internal stress value (σ) obtained according to expression (1) is ≤20 MPa in a two layer state composed of a silicon wafer and a cured material of the liquid resin composition. In the expression (1), σ is internal stress, Eresin (T) is elastic modulus of the cured material of the liquid resin composition at a temperature T°C, αresin (T) is linear expansion coefficient of the cured material of the liquid resin composition at a temperature T°C, and αsi(T) is linear expansion coefficient of silicon at a temperature T°C.

Description

The present invention relates to a liquid resin composition, a semiconductor package manufactured using the liquid resin composition, and a method for manufacturing the semiconductor package.

Reflecting the recent trend of downsizing, weight reduction, high integration, and high-speed operation of electronic devices, the area and volume of the semiconductor chip in the semiconductor package are increased, and the wiring in the semiconductor package is miniaturized and shortened. ing.
Conventionally, as a method of electrically connecting such a semiconductor chip to a wiring board, there is a mounting method called flip-chip connection in which bump electrodes are formed on the semiconductor chip and the bumps are collectively bonded to the wiring board by the bumps. is there. In this method, for example, when the semiconductor chip is downsized, the wiring pattern on the wiring board must be changed, leading to a time lag and cost increase during development, and not suitable for high-mix low-volume production.
Therefore, a method called a wafer level package (WLP) has been devised in which a bump for electrical connection is provided and the entire wafer is sealed before the wafer on which the semiconductor circuit is formed is cut into individual semiconductor chips. (For example, refer to Patent Document 1.)
Since WLP does not require flip-chip connection using a wiring board, it is suitable for high-mix low-volume production. However, in WLP, the upper limit of the number of mounting IO (input / output) bumps per unit area, which increases with the expansion of semiconductor package functions, is proportional to the area of the semiconductor chip, and is compatible with multi-IO semiconductor chips packed with functions in small chips. Can not.
Therefore, semiconductor chips that have been cut in advance are arranged on a carrier serving as a support, sealed in a wafer shape with a sealing resin (pseudo-wafer), and then rewired on the circuit surface of the semiconductor chip. There has been proposed a technology that can cope with an excessive number of IOs with respect to the size of a semiconductor chip while also corresponding to a chip design change at a low cost. (For example, see Patent Document 2.)
However, in this type of WLP, the pseudo wafer is warped due to internal stress due to the difference in coefficient of linear expansion between the sealing resin and the carrier, so that it is difficult to adsorb and transfer the pseudo wafer in the process after sealing. Therefore, the problem is that productivity decreases.

Japanese Patent No. 3616615 US Patent Application Publication No. 2007/205513

  The present invention provides a liquid encapsulating resin composition in which the warpage of a pseudo wafer that causes a decrease in productivity in WLP is suppressed, and a semiconductor package produced using the liquid encapsulating resin composition.

（但し、σは内部応力、Ｅｒｅｓｉｎ（Ｔ）は温度Ｔ℃における液状樹脂組成物の硬化物の弾性率、αｒｅｓｉｎ（Ｔ）は温度Ｔ℃における液状樹脂組成物の硬化物の線膨張係数、αｓｉ（Ｔ）は温度Ｔ℃におけるシリコンの線膨張係数。）
［２］（Ｅ）低応力材の含有量が、全液状樹脂組成物に対して３重量％以上３０重量％以下である［１］に記載の液状樹脂組成物。
［３］前記液状樹脂組成物の硬化物の２５℃での弾性率をＥ_１、ガラス転移温度以下での線膨張係数をα_１、前記液状樹脂組成物の（Ｅ）低応力材成分を（Ｃ）無機充填材成分に置換した液状樹脂組成物の硬化物の２５℃での弾性率をＥ_２、ガラス転移温度以下での線膨張係数をα_２とした時、（Ｅ_１α_１−Ｅ_２α_２）／Ｅ_２α_２ ＜−０．０５である［１］または［２］に記載の液状樹脂組成物。
［４］前記液状樹脂組成物の硬化物のガラス転移温度をＴｇ_１、前記液状樹脂組成物の（Ｅ）低応力材成分を（Ｃ）無機充填材成分に置換した液状樹脂組成物の硬化物のガラス転移温度をＴｇ_２とした時、−０．０５＜（Ｔｇ_１−Ｔｇ_２）／Ｔｇ_２ である［１］乃至［４］のいずれかに記載の液状樹脂組成物。
［５］（Ｅ）低応力材が、コアシェルゴム粒子である［１］乃至［４］のいずれかに記載の液状樹脂組成物。
［６］（Ｅ）低応力材が、コアシェルシリコーンゴム粒子である［１］乃至［５］のいずれかに記載の液状樹脂組成物。
［７］［１］乃至［６］のいずれかに記載の液状樹脂組成物を用いて、半導体チップを支持体に多数個配置し、封止して作製した再配置ウエハー。
［８］［７］に記載の再配置ウエハーにおいて、半導体チップを支持体に多数個配置したものを圧縮成形により、封止して作製された再配置ウエハー。
［９］［７］又は［８］に記載の再配置ウエハーを個片化して作製した半導体パッケージ。
［１０］［１］乃至［６］のいずれかに記載の液状樹脂組成物を用いて作製される半導体パッケージの製造方法であって、半導体チップを支持体に多数個配置する工程、この上に前記液状樹脂組成物を塗布する工程、金型により成形する工程、を含む半導体パッケージの製造方法。 The present invention is as follows.
[1] A liquid resin composition containing (A) an epoxy resin, (B) an acid anhydride, (C) an inorganic filler, (D) a curing accelerator, and (E) a low-stress material, Is contained in an amount of 80 wt% or more and 95 wt% or less with respect to the total liquid resin composition, and the internal stress value (σ) obtained by the equation (1) is 20 MPa in a two-layer state of a silicon wafer and a cured product of the liquid resin composition. The liquid resin composition which is the following.

(Where σ is internal stress, Eresin (T) is the elastic modulus of the cured product of the liquid resin composition at temperature T ° C., αresin (T) is the linear expansion coefficient of the cured product of the liquid resin composition at temperature T ° C., αsi (T) is the linear expansion coefficient of silicon at a temperature of T ° C.)
[2] The liquid resin composition according to [1], wherein the content of the low stress material (E) is 3% by weight or more and 30% by weight or less with respect to the total liquid resin composition.
[3] The elastic modulus at 25 ° C. of the cured product of the liquid resin composition is E ₁ , the linear expansion coefficient below the glass transition temperature is α ₁ , and (E) the low-stress material component of the liquid resin composition is ( C) When the elastic modulus at 25 ° C. of the cured liquid resin composition substituted with the inorganic filler component is E ₂ , and the linear expansion coefficient below the glass transition temperature is α ₂ , (E ₁ α ₁ -E ₂ alpha ₂₎ / _E is ₂ alpha ₂ <-0.05 [1] or liquid resin composition according to [2].
[4] Cured product of liquid resin composition in which glass transition temperature of cured product of liquid resin composition is Tg ₁ and (E) low stress material component of liquid resin composition is replaced with (C) inorganic filler component when the glass transition temperature was Tg _{2 of, -0.05 <(Tg 1 -Tg 2} ) / Tg is ₂ [1] to the liquid resin composition according to any one of [4].
[5] The liquid resin composition according to any one of [1] to [4], wherein the low stress material (E) is a core-shell rubber particle.
[6] The liquid resin composition according to any one of [1] to [5], wherein the low stress material (E) is a core-shell silicone rubber particle.
[7] A rearranged wafer produced by using the liquid resin composition according to any one of [1] to [6] and arranging a large number of semiconductor chips on a support and sealing them.
[8] A rearranged wafer according to [7], wherein a plurality of semiconductor chips arranged on a support are sealed by compression molding.
[9] A semiconductor package produced by dividing the rearranged wafer according to [7] or [8].
[10] A method for producing a semiconductor package produced using the liquid resin composition according to any one of [1] to [6], comprising a step of arranging a plurality of semiconductor chips on a support, A method for producing a semiconductor package, comprising: a step of applying the liquid resin composition; and a step of molding with a mold.

According to the present invention, a wafer level package manufactured using a liquid resin encapsulant, particularly a semiconductor device manufactured in a wafer level process formed into a wafer shape by compression molding, has a low warpage and can be easily sucked and conveyed. High pseudo wafer can be provided.

（但し、σは内部応力、Ｅｒｅｓｉｎ（Ｔ）は温度Ｔ℃における液状樹脂組成物の硬化物の弾性率、αｒｅｓｉｎ（Ｔ）は温度Ｔ℃における液状樹脂組成物の硬化物の線膨張係数、αｓｉ（Ｔ）は温度Ｔ℃におけるシリコンの線膨張係数。）
以下、本発明を詳細に説明する The present invention is a liquid resin composition containing (A) an epoxy resin, (B) an acid anhydride, (C) an inorganic filler, (D) a curing accelerator, and (E) a low-stress material, The internal stress value (σ) obtained by the formula (1) in the two-layer state of the silicon wafer and the cured product of the liquid resin composition is contained in 80% by weight or more and 95% by weight or less with respect to the total liquid resin composition. A liquid resin composition having a pressure of 20 MPa or less and a semiconductor device using the same.

(Where σ is internal stress, Eresin (T) is the elastic modulus of the cured product of the liquid resin composition at temperature T ° C., αresin (T) is the linear expansion coefficient of the cured product of the liquid resin composition at temperature T ° C., αsi (T) is the linear expansion coefficient of silicon at a temperature of T ° C.)
Hereinafter, the present invention will be described in detail.

The (A) epoxy resin used in the present invention is not particularly limited in molecular weight or structure as long as it has two or more epoxy groups in one molecule and is liquid at room temperature.
For example, novolak type epoxy resin such as phenol novolac type epoxy resin, cresol novolak type epoxy resin, bisphenol F type epoxy resin, N, N-diglycidylaniline, N, N-diglycidyltoluidine, diaminodiphenylmethane type glycidylamine, aminophenol Aromatic glycidylamine type epoxy resin such as glycidylamine type, hydroquinone type epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, triphenolpropane type epoxy resin, alkyl-modified triphenolmethane type epoxy Resin, triazine nucleus-containing epoxy resin, dicyclopentadiene-modified phenol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, Epoxy resins such as phenol aralkyl type epoxy resins having a nylene and / or biphenylene skeleton, aralkyl type epoxy resins such as a naphthol aralkyl type epoxy resin having a phenylene and / or biphenylene skeleton, vinylcyclohexene dioxide, dicyclopentadiene oxide, alicyclic Aliphatic epoxy resins such as alicyclic epoxies such as click diepoxy-adipade.
In the present invention, those containing a structure in which a glycidyl ether structure or a glycidylamine structure is bonded to an aromatic ring are preferable from the viewpoints of heat resistance, mechanical properties, and moisture resistance. It is more preferable to limit the amount to be used from the viewpoint of property. These may be used alone or in combination of two or more. In the present invention, it is preferable that the epoxy resin is finally liquid at room temperature (25 ° C.), but even an epoxy resin that is solid at room temperature is dissolved in the liquid epoxy resin at room temperature, and as a result, in a liquid state Just need

(B) Acid anhydride used in the present invention includes phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl-hexahydro. Examples thereof include phthalic anhydride, a mixture of 3-methyl-hexahydrophthalic anhydride and 4-methyl-hexahydrophthalic anhydride, tetrahydrophthalic anhydride, nadic anhydride, or methyl nadic anhydride.
These are preferable because curing at a low temperature is fast and the glass transition temperature of the cured product is high. Moreover, since it is liquid at normal temperature and its viscosity is low, it is more preferable to use tetrahydrophthalic anhydride as a curing agent. In particular, these may be used alone or in combination of two or more.

As the curing agent other than the above (B) acid anhydride, any monomer, oligomer or polymer having a functional group that reacts with epoxy in one molecule can be used in combination. For example, phenols such as phenol novolac resin, cresol novolac resin, dicyclopentadiene modified phenol resin, terpene modified phenol resin, triphenolmethane type resin, phenol aralkyl resin (having phenylene skeleton, diphenylene skeleton, etc.) can be mentioned.

As an inorganic filler (C) used for this invention, what is generally used for the sealing material can be used.
Examples thereof include fused silica, crystalline silica, talc, alumina, silicon nitride and the like, and these may be used alone or in combination of two or more. Among these, fused silica, crystalline silica, and synthetic silica powder are preferable because the heat resistance, moisture resistance, strength, and the like of the resin composition can be improved.
The shape of the inorganic filler is not particularly limited, but the shape is preferably spherical from the viewpoints of viscosity characteristics and flow characteristics.
When the inorganic filler is fused silica, the content is preferably 60% by weight or more and 95% by weight or less in the total epoxy resin composition, more preferably 80%, in view of the balance between moldability and solder crack resistance. % By weight or more and 95% by weight or less. If it is less than the lower limit value, the solder crack resistance with increasing water absorption rate is lowered, and if it exceeds the upper limit value, there may be a problem in the dispensing performance of the liquid sealing resin composition.
When the inorganic filler is other than fused silica, the content is set as the volume conversion.

As a hardening accelerator (D) used for this invention, what is necessary is just to accelerate | stimulate reaction of an epoxy group and an acid anhydride, and what is generally used for the sealing material can be used widely. Examples thereof include, but are not limited to, phosphonium salts, triphenylphosphine, imidazole compounds and the like. These curing accelerators may be used alone or in combination. Preferably, the phosphonium salt having the structure of the general formula (2) or the general formula (3), the triphenylphosphine having the structure of the formula (4), or the imidazole compound having the structure of the formula (5) or the formula (6) has a low viscosity. This is effective from the viewpoint of optimization. More preferably, a curing accelerator having the structure of the general formula (2) or an imidazole compound having the structure of the formula (6) is effective from the viewpoint of further reducing the viscosity. As a hardening accelerator of the said General formula (2), following formula (7), Formula (8), Formula (9) etc. are mentioned, for example.

(ただし、式（２）でR1, R2, R3, 及びR4は芳香族もしくは複素環を有する１価の有機基または１価の脂肪族基であって、それらの内の少なくとも１つは、分子外に放出しうるプロトンを少なくとも１個有するプロトン供与体がプロトンを１個放出してなる基であり、これらは互いに同一であっても異なっていても良い。)

(In the formula (2), R1, R2, R3, and R4 are monovalent organic groups or monovalent aliphatic groups having an aromatic or heterocyclic ring, and at least one of them is a molecule. (The proton donor having at least one proton that can be released to the outside is a group formed by releasing one proton, and these may be the same or different from each other.)

(ただし、式（３）で、Arは置換または無置換の芳香族基を表し、同一分子内の二つの酸素原子は、芳香族炭素位の隣接に位置する。 nは２〜１２の整数)

(In the formula (3), Ar represents a substituted or unsubstituted aromatic group, and two oxygen atoms in the same molecule are located adjacent to the aromatic carbon position. N is an integer of 2 to 12)

  Moreover, as a hardening accelerator of General formula (3), following formula (10), Formula (11), Formula (12), etc. are mentioned.

(D) It is preferable that the compounding quantity of a hardening accelerator is 0.1 to 1.0 weight part with respect to 100 weight part of all the liquid sealing resin compositions, More preferably, it is 0.3. It is not less than 0.8 parts by weight. This is because if it is less than the lower limit, curing is slow and productivity is lowered, and if it exceeds the upper limit, the storage stability may be deteriorated.

The blending ratio [(B) / (D)] of (B) acid anhydride and (D) curing accelerator is preferably 3 or more and 35 or less, more preferably 5 or more and 30 or less, and more preferably 10 or more and 20 or less. Particularly preferred. This is because when the blending ratio [(B) / (D)] is less than the lower limit value, the storage stability is deteriorated, and when it exceeds the upper limit value, the curing is slow and the productivity may be deteriorated.
Further, the blending amount of (B) acid anhydride is preferably 2 parts by weight or more and 10 parts by weight or less, and more preferably 5 parts by weight or more and 7 parts by weight or less with respect to 100 parts by weight of the liquid resin composition.
(B) When the compounding quantity of an acid anhydride is less than a lower limit, curability will worsen and productivity will fall. And when it exceeds an upper limit, there exists a possibility that moisture resistance reliability may fall.

The (E) low-stress material used in the present invention is not particularly limited as long as it makes the resin composition have low elasticity, and those generally used for sealing materials can be widely used. For example, ethylene / ethyl acrylate copolymer resin, ethylene / vinyl acetate copolymer resin, butadiene-nitrile rubber, polyurethane, acrylic rubber, acrylonitrile-butadiene rubber, silicone rubber, polyethylene, polypropylene, polybutadiene, silicone rubber, olefin copolymer , Nitrile rubber, polybutadiene rubber and modified products thereof. Among these, when the low stress material (E) is a liquid rubber, a solid rubber is preferable because a decrease in Tg due to the addition becomes large. Among the solid rubbers, it is more preferable to use core-shell rubber particles because an increase in the linear expansion coefficient can be suppressed. More preferred are core-shell silicone rubber particles. Moreover, it is preferable that the addition amount of (E) low-stress material is 3 to 30 weight% in a liquid resin composition, and 5 to 20 weight% is more preferable. This is because if it is less than the lower limit, the effect of low elasticity cannot be obtained, and if it exceeds the upper limit, the increase in viscosity is high and the productivity may be deteriorated.

(E) When the low-stress material is core-shell particles, the glass transition temperature of the core part is preferably lower than the glass transition temperature of the shell part and lower than room temperature. In this case, the core and shell need not be the same type of rubber, and it is possible to combine the core with silicone rubber, the shell with acrylic rubber, or the core with butadiene rubber and the shell with acrylic rubber. is there.

  (E) When the low-stress material is a core-shell particle, it is preferably spherical or substantially spherical in that it hardly aggregates. The particle diameter of (C) core-shell particles is preferably 0.01 μm or more and 30 μm or less, and more preferably 0.1 μm or more and 10 μm or less. When the particle diameter is less than the lower limit, the cohesive force becomes strong, the viscosity increases, and the fluidity cannot be maintained. If the upper limit is exceeded, resin clogging may occur in a narrow gap.

In the liquid resin composition of the present invention, the solid component is contained in an amount of 80% by weight or more and 95% by weight or less based on the total liquid resin composition. The solid component is a solid component at 25 ° C., and indicates the combined content of the inorganic filler and the solid low-stress material.

  Examples of components that can be used other than the above include mold release agents such as silicone compounds and waxes as antifoaming agents, flame retardants, and the like, and they can be added according to desired characteristics.

As a method for producing the liquid sealing resin composition of the present invention, for example, each component, additive and the like are dispersed and kneaded using an apparatus such as a planetary mixer, three rolls, two hot rolls, and a laika machine, and then vacuumed. Manufacture by defoaming under.

The internal stress value (σ) obtained by the formula (1) in the two-layer state of the cured product of the liquid resin composition of the present invention and the silicon wafer needs to be 20 MPa or less. If this value exceeds the upper limit, the wafer warpage due to internal stress may increase when applied to a wafer level package.

（但し、σは内部応力、Ｅｒｅｓｉｎ（Ｔ）は温度Ｔ℃における樹脂の弾性率、αｒｅｓｉｎ（Ｔ）は温度Ｔ℃における樹脂の線膨張係数、αｓｉ（Ｔ）は温度Ｔ℃における半導体素子の線膨張係数。）

(Where σ is the internal stress, Eresin (T) is the elastic modulus of the resin at a temperature T ° C., αresin (T) is the linear expansion coefficient of the resin at the temperature T ° C., and αsi (T) is the line of the semiconductor element at the temperature T ° C. Expansion coefficient.)

The elastic modulus at 25 ° C. of the cured product of the liquid resin composition of the present invention is E ₁ , the coefficient of linear expansion below the glass transition temperature is α ₁ , and (E) the low stress material component of the liquid resin composition is (C ) When the elastic modulus at 25 ° C. of the cured liquid resin composition substituted with the inorganic filler component is E ₂ and the coefficient of linear expansion below the glass transition temperature is α ₂ , (E ₁ α ₁ -E ₂ α ₂ ) / E ₂ α ₂ <−0.05 is preferred. If this value exceeds the upper limit, defects may easily occur in a solder heat test or the like in a semiconductor package.

The glass transition temperature of the cured product of the liquid resin composition of the present invention is Tg ₁ , and the cured product of the liquid resin composition in which the (E) low stress material component of the liquid resin composition is replaced with the (C) inorganic filler component. when the glass transition temperature was Tg _2, it is preferably _{-0.05 <(Tg 1 -Tg 2)} / Tg 2. If this value is less than the lower limit, defects may easily occur in a solder heat test or the like in a semiconductor package.

Examples of the semiconductor package of the present invention include the following types, but are not limited thereto.
That is, BGA (Ball Grid Array), FCBGA (Flip Chip BGA), MAPBGA (Molded Array Process BGA), and the like. As a more preferable example of application of the liquid sealing resin composition of the present invention, there is eWLB (Embedded Wafer-Level BGA), which is in the form of Fan-Out type, Fan-In type, SiP (System in Package) or the like. is there.

As a method for manufacturing a semiconductor package of the present invention, for example, there is the following method, but the method is not limited to this.
That is, a step of arranging a large number of semiconductor chips known to operate in advance on a carrier as a support with the active surface facing downward (a step of arranging a large number of semiconductor chips on a support), and then a molding metal Place on the mold and apply the liquid resin composition of the present invention on the dispenser with a dispenser or the like (the step of applying the liquid resin composition), then, after the compression molding (the step of forming with the mold), peel off the carrier Thus, a rearranged wafer in which the semiconductor chips are sealed and rearranged is obtained.
Subsequently, a buffer coating material is spin-coated on the surface of the obtained rearranged wafer, the buffer coating material is cured to form an insulating film layer, and then an electrode pad portion on the active surface of the semiconductor chip is opened by a patterning process. Make a hole. Rewiring processing and mounting bump formation are performed by plating or the like from the hole portion to the surface of the buffer coating material (rewiring process). Then, a semiconductor package is obtained by dividing this into pieces by dicing (an individualization process).

EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, it is not limited to these.
[Example 1]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell silicone rubber particles (E) as low stress material (E) Core shell silicone rubber 1)
KMP-605 150 parts by weight manufactured by Shin-Etsu Chemical Co., Ltd. (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E 4 parts by weight manufactured by Shin-Etsu Chemical Co., Ltd. was taken in a beaker and mixed with a spatula. Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.

The following evaluation was performed about the produced liquid resin composition.
The liquid resin composition was cured under curing conditions of 125 ° C. for 10 minutes and 150 ° C. for 1 hour to prepare a test sample. Further, a test sample was prepared by curing a liquid resin composition obtained by substituting the low stress material component (E) of the liquid resin composition with (C) inorganic filler 1 under the curing conditions of 125 ° C. for 10 minutes and 150 ° C. for 1 hour. Created.

(A) Viscosity measurement: A 3 ° R7.7 cone was attached to an E-type viscometer, and measurement was performed at 25 ° C. under the condition of 5 rpm.

(B) Glass transition temperature, linear expansion coefficient: Using a thermomechanical analyzer (TMA / SS6100, manufactured by SII), a liquid resin composition cured in a square column shape is compressed from -100 ° C to 300 ° C by a compression method. The temperature was measured at a rate of ° C./min, and the glass transition temperature and the linear expansion coefficient in the glass state region were measured.

(C) Glass transition temperature change rate: Tg ₁ is the glass transition temperature of the cured product of the liquid resin composition, and (E) the low stress material component of the liquid resin composition is the liquid resin in which (C) the inorganic filler 1 is substituted. when the glass transition temperature of the cured product of the composition was Tg _2, a _{(Tg 1 -Tg 2) / Tg} 2 × 100.

(D) Room temperature elastic modulus: Using a viscoelasticity measuring device (DMA-7e, manufactured by PERKIN ELMER), a liquid resin composition cured in a plate shape was subjected to 3 ° bending from 0 ° C. to 300 ° C. at 5 ° C. / The temperature was measured at min and the elastic modulus at 25 ° C. was measured.

(E) linear expansion coefficient × room temperature elastic modulus change rate: E ₁ is an elastic modulus at 25 ° C. of a cured product of the liquid resin composition, α ₁ is a linear expansion coefficient below the glass transition temperature, and the liquid resin composition (E) The elastic modulus at 25 ° C. of the cured product of the liquid resin composition in which the low-stress material component is replaced with (C) inorganic filler 1 is E ₂ , and the linear expansion coefficient below the glass transition temperature is α ₂ . when a _{(E 1 α 1 -E 2 α} 2) / E 2 α 2 × 100.

(F) Internal stress value: The internal stress value (σ) obtained by the formula (1) in the two-layer state of the silicon wafer and the liquid resin cured product was determined.

（但し、σは内部応力、Ｅｒｅｓｉｎ（Ｔ）は温度Ｔ℃における樹脂の弾性率、αｒｅｓｉｎ（Ｔ）は温度Ｔ℃における樹脂の線膨張係数、αｓｉ（Ｔ）は温度Ｔ℃におけるシリコンの線膨張係数。）

(Where σ is the internal stress, Eresin (T) is the elastic modulus of the resin at a temperature T ° C., αresin (T) is the linear expansion coefficient of the resin at the temperature T ° C., and αsi (T) is the linear expansion of the silicon at the temperature T ° C. coefficient.)

(G) Adhesion force: The prepared liquid resin composition was applied to the bright etch surface, which is the back surface of a 625 μm-thick silicon wafer whose surface was cut into 10 mm square. A nail (copper) for adhesion measurement was attached across this, and after heat curing at 125 ° C. for 10 minutes, post-curing was further performed at 175 ° C. for 4 hours to obtain a measurement sample. The nail adhesion area is 10 mm ² . This was measured by fixing the semiconductor chip surface to a measuring device (Dage4000, manufactured by Dage) with a vise and lifting it vertically at 25 ° C.
The viscosity of the prepared liquid resin composition at 25 ° C. is 500 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 15 GPa, and the linear expansion × The room temperature elastic modulus change rate is -24%. The internal stress value was 9 MPa, and the adhesion was 28N.

[Reliability evaluation]
A semiconductor wafer (Phase 8, manufactured by Hitachi Ultra LSI Co., Ltd., 350 μm thickness) wired on the semiconductor chip was cut into a 7 mm square by a dicing apparatus to obtain a semiconductor chip. Next, an 8-inch silicon wafer (725 μm thickness) was used as a carrier, and a peelable thermally foamed film (Riva Alpha, manufactured by Nitto Denko Corporation) was bonded to the foamed surface of the thermally foamed film at room temperature to form a support substrate. A semiconductor chip was mounted with a die mounter (DB200, manufactured by Kasuya Kogyo Co., Ltd.) so that the active surface on which the electrodes of the semiconductor chip were in contact with the thermally foamed film with a suitable space in the support substrate. A support substrate with a semiconductor chip was set in a compression molding machine, an appropriate amount of the liquid resin composition was placed, and curing was performed at a molding pressure of 3 MPa at 125 ° C. for 10 minutes to obtain a wafer. The amount of the liquid resin composition was adjusted so that the resin thickness after molding was 600 ± 10 μm.
After the wafer is heat-treated in an oven at 150 ° C. for 1 hour and then cured, it is placed on a 200 ° C. adsorbing hot plate to peel off the support substrate, and then the thermally foamed film is foamed, and the wafer portion of the support substrate is peeled off. Then, the thermally foamed film itself was peeled from the wafer to obtain a rearranged wafer with a large number of semiconductor chips exposed on the surface. The obtained rearranged wafer was measured with a surface roughness measuring device (SURFCOM 1400D, manufactured by Tokyo Seimitsu Co., Ltd.) with the chip surface facing upward at a measurement distance of 18 mm and a measurement speed of 6 mm / s, and the warpage was 0.8 mm. there were.
The entire rearranged wafer thus obtained was spin coated with a photosensitive buffer coating material (DSPIN 80A, manufactured by Sokudo Co., Ltd., 1500 rpm, 30 seconds), and then pre-baked (at 125 ° C. for 5 minutes) with the same apparatus. An insulating film for rewiring is formed on the surface. In order to open the insulating film at the position of each connection pad of the semiconductor chip, light irradiation (broadband aligner MA-8, manufactured by SUSS Microtec Co., Ltd., 500 mJ / cm ² ) was performed, and a developer (TMAH 2.38) was formed. %, 23 ° C., 62 seconds twice paddle), and final curing (250 ° C., 1.5 hours). Next, a film was formed in order on the buffer coat by sputtering (SPF-740H, manufactured by Canon Anelva Engineering Co., Ltd.) so that the thickness was 500 mm of titanium and 3000 mm of copper. A resist (Sunfort 155, manufactured by Asahi Kasei E-Materials Co., Ltd.) is applied here, and the resist is exposed and developed using a rewiring circuit mask. Further, a copper layer having a thickness of 10 μm was formed on the whole by copper plating, and then the resist was peeled off. In this state, unnecessary copper and titanium layers remain on the buffer coat surface. After removing these by etching, a buffer coat layer is provided again by spin coating, and holes are opened at different positions after rewiring. The copper layer for this was exposed. Rewiring was performed according to the above procedure.
The rearranged wafers that had been rewired were separated into 15 mm square sizes using a dicer. In this way, a semiconductor package device for reliability testing was assembled.

(H) Solder heat resistance test The manufactured semiconductor package was treated at 125 ° C. for 20 hours, and then moisture-absorbed for 168 hours at 85 ° C. and 85% RH. This was passed three times through a reflow oven set so that the maximum temperature of 260 ° C. was 30 seconds, and a solder heat resistance test 1 was conducted. (Test condition 1)
Further, a solder heat resistance test 2 was performed in the same manner except that the moisture absorption treatment condition of the solder heat resistance test 1 (test condition 1) was 85 ° C. and 60% RH168h. (Test condition 2)
The sample after the test was checked for internal peeling using a 20 MHz probe with an ultrasonic flaw detector (FineSAT FS300, manufactured by Hitachi Construction Machinery Co., Ltd.). When the total peeled area was 10% or less with respect to the area of the semiconductor chip, it was regarded as minute peeling, and as the peeling area was larger than that, the number of semiconductor packages where peeling was observed was counted.
As a result of using the liquid resin composition, neither fine peeling nor peeling was found.

[Example 2]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 750 parts by weight manufactured by Denki Kagaku Kogyo Co., Ltd. (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 150 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core-shell silicone rubber particles as low stress material (E) ( Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 100 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 100 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 11 ppm / ° C., the room temperature elastic modulus is 7 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -20%. The internal stress value was 11 MPa, the adhesion force was 24 N, and the warpage of the rearranged wafer was 1.0 mm.

[Example 3]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 manufactured by Denki Kagaku Kogyo Co., Ltd. 2000 parts by weight (4) As inorganic filler (C), inorganic filler 2
SO-E2 Admatex 400 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Low-stress material (E) core-shell silicone rubber particles ( Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 230 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. Viscosity at 25 ° C. of liquid resin composition is 1500 Pa · s, glass transition temperature is 100 ° C., glass transition temperature change is 0 ° C., linear expansion coefficient is 5 ppm / ° C., room temperature elastic modulus is 21 GPa, linear expansion × room temperature elastic modulus The rate of change is -18%. The internal stress value was 5 MPa, the adhesion was 30 N, and the warpage of the rearranged wafer was 0.7 mm.

[Example 4]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell silicone rubber particles (E) as low stress material (E) Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 70 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 400 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 18 GPa, and the linear expansion × room temperature elastic modulus. Change rate is -10%. The internal stress value was 11 MPa, the adhesion was 23 N, and the warpage of the rearranged wafer was 0.9 mm.

[Example 5]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74, manufactured by Denki Kagaku Kogyo Co., Ltd. 800 parts by weight (4) As inorganic filler (C), inorganic filler 2
SO-E2 manufactured by Admatechs Co., Ltd. 300 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell silicone rubber particles (E) as low-stress material (E) Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 430 parts by weight (7) Epoxy silane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. Viscosity at 25 ° C. of liquid resin composition is 1500 Pa · s, glass transition temperature is 100 ° C., glass transition temperature change is 0 ° C., linear expansion coefficient is 9 ppm / ° C., room temperature elastic modulus is 6 GPa, linear expansion × room temperature elastic modulus Change rate is -50%. The internal stress value was 6 MPa, the adhesion was 25 N, and the warpage of the rearranged wafer was 0.8 mm.

[Example 6]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell silicone rubber particles (E) as low stress material (E) Core shell silicone rubber 2)
KMP-600 Shin-Etsu Chemical Co., Ltd. 150 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight was taken in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 500 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 15 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -24%. The internal stress value was 9 MPa, the adhesion was 27 N, and the warpage of the rearranged wafer was 1.0 mm.

[Example 7]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell acrylic rubber particles (E) as low stress material (E) Core shell acrylic rubber)
W5500 150 parts by weight manufactured by Mitsubishi Rayon Co., Ltd. (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E manufactured by Shin-Etsu Chemical Co., Ltd. After kneading three times with a roll, it was put in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 500 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 12 ppm / ° C., the room temperature elastic modulus is 16 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -7%. The internal stress value was 15 MPa, the adhesion was 27 N, and the warpage of the rearranged wafer was 1.2 mm.

[Example 8]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S manufactured by Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyltetrahydrophthalic anhydride
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (3) Inorganic filler 1 as inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 Admatex 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Epoxidized polybutadiene (25) as low stress material (E) Liquid at ℃)
BF-1000 70 parts by weight manufactured by Adeka (7) Epoxy silane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight was taken in a beaker and mixed with a spatula. After kneading three times with this roll, it was put in a beaker and defoamed for 10 minutes in a vacuum oven (normal temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 400 Pa · s, the glass transition temperature is 96 ° C., the glass transition temperature change is −4 ° C., the linear expansion coefficient is 13 ppm / ° C., the room temperature elastic modulus is 18 GPa, and the linear expansion × room temperature elasticity. The rate of change is -6%. The internal stress value was 16 MPa, the adhesion was 22 N, and the warpage of the rearranged wafer was 1.8 mm.

[Example 9]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 80 parts by weight (2) As an epoxy resin (A), a cresol novolac type epoxy
ESCN195LA (softening point 62 ° C.) 20 parts by weight of Sumitomo Chemical Co., Ltd. (3) Methyltetrahydrophthalic anhydride as anhydride (B)
MT-500 New Nippon Rika Co., Ltd. 100 parts by weight (4) Inorganic filler 1 as inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (5) As inorganic filler (C), inorganic filler 2
SO-E2 manufactured by Admatechs Co., Ltd. 250 parts by weight (6) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (7) Core-shell silicone rubber particles (E) as low stress material (E) Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 150 parts by weight (8) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 900 Pa · s, the glass transition temperature is 110 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 16 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -28%. The internal stress value was 10 MPa, the adhesion was 29 N, and the warpage of the rearranged wafer was 1.3 mm.

[Example 10]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell silicone rubber particles (E) as low stress material (E) Core shell silicone rubber 1)
150 parts by weight of KMP-605 manufactured by Shin-Etsu Chemical Co., Ltd. (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E manufactured by Shin-Etsu Chemical Co., Ltd. Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 500 Pa · s, the glass transition temperature is 96 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 15 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -23%. The internal stress value was 9 MPa, the adhesion was 27 N, and the warpage of the rearranged wafer was 1.1 mm.

[Example 11]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 Admatex 250 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (10) 7 parts by weight (6) Low-stress material (E) core-shell silicone rubber particles ( Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 150 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 600 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 15 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -25%. The internal stress value was 9 MPa, the adhesion force was 26 N, and the warpage of the rearranged wafer was 1.1 mm.

[Comparative Example 1]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74 manufactured by Denki Kagaku Kogyo Co., Ltd. 450 parts by weight (4) As inorganic filler (C), inorganic filler 2
SO-E2 manufactured by Admatechs Co., Ltd. 100 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core-shell silicone rubber particles (E) as low stress material (E) Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 70 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 10 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 15 ppm / ° C., the room temperature elastic modulus is 5 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -23%. The internal stress value was 23 MPa, the adhesion force was 19 N, and the warpage of the rearranged wafer was 2.4 mm.

[Comparative Example 2]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74 manufactured by Denki Kagaku Kogyo Co., Ltd. 3000 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 Admatex 500 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Low-stress material (E) core-shell silicone rubber particles ( Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 320 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. An attempt was made to measure the viscosity at 25 ° C. of the liquid resin composition, but it was too hard to measure. Other cured products were not evaluated because samples could not be prepared.

[Comparative Example 3]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 manufactured by Admatechs Co., Ltd. 300 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Core shell silicone rubber particles (E) as low-stress material (E) Core shell silicone rubber 1)
KMP-605 Shin-Etsu Chemical Co., Ltd. 20 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 200 Pa · s, the glass transition temperature is 100 ° C., the glass transition temperature change is 0 ° C., the linear expansion coefficient is 7 ppm / ° C., the room temperature elastic modulus is 21 GPa, and the linear expansion × room temperature elastic modulus. The rate of change is -3%. The internal stress value was 21 MPa, the adhesion was 20 N, and the warpage of the rearranged wafer was 2.5 mm.

[Comparative Example 4]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74, manufactured by Denki Kagaku Kogyo Co., Ltd. 800 parts by weight (4) As inorganic filler (C), inorganic filler 2
SO-E2 manufactured by Admatechs Co., Ltd. 200 parts by weight (5) Curing accelerator represented by formula (8) as curing accelerator (D) 7 parts by weight (6) Core shell silicone rubber particles as low stress material (E)
KMP-605 Shin-Etsu Chemical Co., Ltd. 580 parts by weight (7) Epoxysilane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E Shin-Etsu Chemical Co., Ltd. 4 parts by weight was taken in a beaker and mixed with a spatula Then, after kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. An attempt was made to measure the viscosity at 25 ° C. of the liquid resin composition, but it was too hard to measure. Other cured products were not evaluated because samples could not be prepared.

[Comparative Example 5]
(1) Bisphenol F type epoxy resin as epoxy resin (A)
SB-403S Nippon Kayaku Kogyo Co., Ltd. 100 parts by weight (2) As anhydride (B), methyl hexahydrophthalic anhydride
MH-700 New Nippon Rika Co., Ltd. 100 weight part (3) Inorganic filler 1 as an inorganic filler (C)
FB-74 Denki Kagaku Kogyo Co., Ltd. 1200 parts by weight (4) Inorganic filler 2 as inorganic filler (C)
SO-E2 Admatex 500 parts by weight (5) Curing accelerator (D), curing accelerator represented by formula (8) 7 parts by weight (6) Low stress material (E) acrylic rubber polymer (acrylic) Rubber, liquid at 25 ° C)
UP-1061 150 parts by weight manufactured by Toagosei Co., Ltd. (7) Epoxy silane coupling agent: 3-glycidoxypropyltrimethoxysilane KBM-403E 4 parts by weight manufactured by Shin-Etsu Chemical Co., Ltd. was placed in a beaker and mixed with a spatula. After kneading three times with three rolls, the mixture was placed in a beaker and defoamed for 10 minutes in a vacuum oven (room temperature, 5 mmHg) to obtain a liquid resin composition.
The produced liquid resin composition was evaluated in the same manner as in Example 1. The viscosity at 25 ° C. of the liquid resin composition is 100 Pa · s, the glass transition temperature is 80 ° C., the glass transition temperature change is −20 ° C., the linear expansion coefficient is 15 ppm / ° C., the room temperature elastic modulus is 16 GPa, and the linear expansion × room temperature elasticity. The rate of change is 98%. The internal stress value was 22 MPa, the adhesion force was 22 N, and the warpage of the rearranged wafer was 2.6 mm.

For Examples 2 to 11, a semiconductor package was assembled in the same manner as in Example 1, and a solder heat resistance test was performed. No peeling was observed in any of Test Conditions 2, but one minute peeling was observed in Examples 4, 7, and 8 in Test Condition 1.
In Comparative Examples 1 to 5, semiconductor packages were assembled in the same manner as in Example 1. However, in Comparative Examples 2 and 4, the liquid resin composition G was too high to be molded and was not evaluated. The solder heat resistance test was performed on the semiconductor packages assembled for Comparative Examples 1 and 5. In Test Condition 1, all of them were peeled off, and in Test Condition 2, more than half were peeled off. About Comparative Example 3, about half peeled off under test condition 1, but no peel was observed under test condition 2.

Claims (10)

A liquid resin composition containing (A) an epoxy resin, (B) an acid anhydride, (C) an inorganic filler, (D) a curing accelerator, and (E) a low stress material, wherein the solid components are all liquid. 80 wt% or more and 95 wt% or less with respect to the resin composition, and the internal stress value (σ) obtained by the formula (1) is 20 MPa or less in the two-layer state of the cured product of the silicon wafer and the liquid resin composition. Liquid resin composition.

(Where σ is internal stress, Eresin (T) is the elastic modulus of the cured product of the liquid resin composition at temperature T ° C., αresin (T) is the linear expansion coefficient of the cured product of the liquid resin composition at temperature T ° C., αsi (T) is the linear expansion coefficient of silicon at a temperature of T ° C.) (E) The liquid resin composition according to claim 1, wherein the content of the low-stress material is 3% by weight or more and 30% by weight or less with respect to the total liquid resin composition. The cured product of the liquid resin composition has an elastic modulus at 25 ° C. of E ₁ , a linear expansion coefficient below the glass transition temperature α ₁ , and (E) the low stress material component of the liquid resin composition is (C) inorganic When the elastic modulus at 25 ° C. of the cured product of the liquid resin composition substituted with the filler component is E ₂ , and the linear expansion coefficient below the glass transition temperature is α ₂ , (E ₁ α ₁ -E ₂ α ₂ ) / E ₂ α ₂ <−0.05. The liquid resin composition according to claim 1 or 2. The glass transition temperature of the cured product of the liquid resin composition is Tg ₁ , and the glass transition of the cured product of the liquid resin composition in which the (E) low stress material component of the liquid resin composition is replaced with the (C) inorganic filler component. when the temperature was _{Tg 2, -0.05 <(Tg 1} -Tg 2) / Tg is _two preceding claims liquid resin composition according to any one of 3. (E) The liquid resin composition according to any one of claims 1 to 4, wherein the low-stress material is core-shell rubber particles. (E) The liquid resin composition according to any one of claims 1 to 5, wherein the low-stress material is core-shell silicone rubber particles. A rearranged wafer produced by placing a large number of semiconductor chips on a support and sealing the liquid resin composition according to claim 1. 8. The rearrangement wafer according to claim 7, wherein a plurality of semiconductor chips arranged on a support are sealed by compression molding. A semiconductor package produced by dividing the rearranged wafer according to claim 7 or 8 into individual pieces. A method for manufacturing a semiconductor package produced using the liquid resin composition according to any one of claims 1 to 6,
Arranging a large number of semiconductor chips on a support,
A step of applying the liquid resin composition thereon,
A method of manufacturing a semiconductor package, including a step of molding with a mold.