TW201233560A - Method for manufacturing an electronic device and electronic device manufactured thereby, method for manufacturing an electronic device package and electronic device package manufactured thereby, and method for manufacturing a semiconductor device - Google Patents

Method for manufacturing an electronic device and electronic device manufactured thereby, method for manufacturing an electronic device package and electronic device package manufactured thereby, and method for manufacturing a semiconductor device Download PDF

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TW201233560A
TW201233560A TW100143187A TW100143187A TW201233560A TW 201233560 A TW201233560 A TW 201233560A TW 100143187 A TW100143187 A TW 100143187A TW 100143187 A TW100143187 A TW 100143187A TW 201233560 A TW201233560 A TW 201233560A
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Taiwan
Prior art keywords
layer
resin
resin layer
electronic device
manufacturing
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TW100143187A
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Chinese (zh)
Inventor
Toshiharu Kuboyama
Masakazu Kawata
Etsu Takeuchi
Junya Kusunoki
Hiromichi Sugiyama
Toshihiro Sato
Masakatsu Maeda
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Sumitomo Bakelite Co
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Priority claimed from JP2010262929A external-priority patent/JP2012114297A/en
Priority claimed from JP2010278683A external-priority patent/JP2012129326A/en
Priority claimed from JP2011086938A external-priority patent/JP2012222174A/en
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW201233560A publication Critical patent/TW201233560A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Abstract

One aspect of the present invention provides a repositioning type process of manufacturing an electronic device. This manufacturing method of the electronic device does not cause electronic components to shift positions in the electronic device, suppress damage to sealants and electronic components, and can easily remove residues generated by said manufacturing process, so as to enhance the reliability of the electronic device, a method for manufacturing an electronic device package and the electronic device package. Said manufacturing method of the electronic device forms a hold resin layer, holds electronic components, forms a sealant layer, obtains a sealant hardener on which the electronic components are arranged, and removes said sealant hardener from the support base. Said removing process of the sealant hardener exposes an active energy ray toward said hold resin layer so as to heat and melt the hold resin layer.

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201233560 六、發明說明： 【發明所屬之技術領域】 本發明係關於電子裝置之製造方法、電 裝體之製造方法、電子裝置封I體、及半導體g 封 本申請案基於2010年11月25日於日太又置之衣&方法。 262929 Η 14 A於本楗申的日本特願2010- ^屬#ϋ 2010年12月14日於日本提申之 號、及2〇11年4月η日於日本提中之日太^巧2010-278683 張優先權，其内容在此援用。 、’、_ 69385虎主 【先前技術】 種4年要 處理月匕力之咼速化之要求，半導體曰片‘ ® 趙晶片之配_加, 入的^線數取決於半體晶片的面積，故配線數有極限。*】》】 曰>；此的問題並實現高密度安裝，有人提出將半導體 择於ΐίΐΓ此的問題，有人提4—種再配置型之電子裝置，1 成黏接層，其次，在黏接層上將單片化之半導體 件，其次觀置有電子零狀㈣材之硬 g , s亲離，其次於電子零件之與黏接層接觸之面利用再 入於配線牽制較電子零件之外徑更為外側，藉此使輸 \ ®/己線數並對應於高密度彳_如:參照專利文獻U。 密封Ξίϊ置裝置使用的黏接層，要求:具有於以密封材 .. ^字電子令件固定於支持基板，以使得電子零件不發 子零件之宰能;以及使密封材熱硬化後’能輕易地將配置有電 剝i時。配署古ί硬化物從設有黏接層之支持基板剝離·。又，該 ^ —有電子零件之密封材之硬化物較佳為無黏接層之殘 導體^之產率不佳的問題或連接可靠性差的問題 干 201233560 渣附著。 之 使 私S 在知1出的黏接層，由於係孰塑性之教接斗、办+ 黏接層，難以兼得使電子零件不發生起泡型 著之機能(例如參照‘文獻f;)板剝離之機能^ ^ 子零件位綠麟，於之後之再輯處賴法正柄、隹— :產生物無法輕易_，密：= 置：_雜層之魅若附著於配 此類的問題封材之_，會發生電子裝置之可靠性降低 工方:如於裝:之製造步驟，會進行半導體晶 ^ ,, 專利文獻4、5揭不以如以下方式製造半導體梦 首先其^圖9 ’將電晶體等層900隔著黏著層9〇1而固定在^ 胜(donor)基板902，之後將層900進行加工。其次對 = ===溫加熱。藉峨㈣會分解，且^ ‘ 專利文獻4、㈣示之半導體裝置之製造方法，雖將黏著層謝 分解而使層_與施體基板分離，但是會有黏著層撕之分 解殘渣多量殘留於層900及施體基板9〇2的問題。殘杳多時， 需仔細洗騎_，再者將碰基板9G2再細^ 施體基板902，半導體裝置之製造煩雜。 而子、先“ 【先前技術文獻】 【專利文獻】 明書 【專利文獻1】日本特開2006-287235號公報 【專利文獻2】曰本特開2005-191296號公報 【專利文獻3】日本特開2005-243702號公報 【專利文獻4】美國專利申請案公開第2Q04/0234717A1號說 明書 【專利文獻5】.美國專利申請案公開第2〇〇4/〇232943A1號說 201233560 【專利文獻6】日本特開平9-253964號公報 【發明内容】 【發明欲解決之問題】 义本發明之目的提供於再配置型之電子裝置之製造步驟中，不 電子零狀位置麟，且不易發生贿材缝子零件破損， 再者即使錢猶著時也關便除奴電子裝置之製造、 ίί子ΐί之製造方法製作之高可靠性之電子裝置、包含該電子 之電子裝置封裝體之製造方法、及以該電子裝置 封裂體之ι造方法製作之高可靠性之電子裝置封裝體。 又本舍明之另一目的在於提供於半導體裝置赞 中’能減低熱分解性之樹脂層之殘逢量的半導體裝置之ϋ方 【解決問題之方式】 城 如此種目的可藉由下列⑴〜⑽記載之本發明達成。 (1)一種電子裝置之製造方法，包含以下步驟. 層形齡驟，在支誠歡表面設置 、電子零個定步驟，贿得彼此相鄰的電子 式’在該蚊樹脂層上配置多數電子零件，並且 固定樹脂層將前述電子零件固定在前述支持基材上.m者則遂 畨封材層形成步驟，以密封材被覆前述電 定樹脂層及前述電子零件上使密封材層形成；π件在則述固 密封材硬化步驟，藉由將前述密封材加*，以 硬化’獲得由前述支持基材所支持絲置有 封材 零件配置密封材硬化物； 置有㈣電子零件之電子. •零件配置密 剝離步驟，將由前述支持基材所支持之前 封材硬化物從前述支持基材剝離； 卞 其特徵為： 於前述剝離步驟，藉由在對於前述固定 ^ 射線後將前述岐樹脂層加熱而使炫融，，活性能量 密封材硬化物從前述支持基材剝離。 、則^電子零件配置 201233560 脂層溶融之=/、、i 竭梅步驟使前述固定樹 (¾如(1)或(2)之電子裝置之製造方法，复 使前述固定樹脂層溶融之溫度為13〇~2〇〇ΐ :、巾則迷_>驟 输罐細 (5)^—種電子裝置之製造方法，包含以下步驟： 固定樹脂層形成步驟，在支持基材之表 . 電子零件狀步驟，以使得彼此相鄰的 隙$方式’在該固定樹脂層上配置錄電子零件：並且卩“ 固定樹脂層將前述電子零件固定在前述支持又材上™月1卜 定樹月密驟’以密封材被覆前述ΐ子零件，在前述固 疋树知層及剛述電子零件上使密封材層形成； =材硬化兼剝離步驟’藉由將前述密封材純 支絲材所场且配置杨述電子二 麻ίί件置㈣材硬化物，同_前述電子轉配置穷封杖 硬化物從前述支持基材_; 仵配置讀材 其特徵為： 射活:ϊίΐ硬化ϊ剝離步驟’藉由對於前述固领脂層照 電子二till加熱使前述固定樹脂層熔融，將前述 电子零件配置讀材硬錄從前述支絲材剝離。 剝離置之製造方法，其中，於前述密封材硬化兼 _步驟使刖述固定樹脂層溶融之溫度為130〜20(rc。 苯 2)如(5)或(6)之電子裝置之製造方法，其中，前 1曰〇ifs述活性能量射賴概於18Gt之熔融減為_〜曰 ⑴至⑺中任一項之電子裝置之製造方法，更包含配線 層形成步驟，該麵餘前魏子零舰置密册硬化物 201233560 牛驟電子裝置之製造方法再者，更包含料化步驟，該 ί予==有配線層之前述電子零件配置密封材硬化Χ 產生酸i;活性it成分;以及會由於前述活性能量射線照射而 碳酸醋。)之電子|置之製造方法，其巾，前述概成分為聚 項之電 子裝其特徵為:係以如⑴至㈣中任一 物安襄於紐。 之_電子零件配封材硬化 封=製，徵為:係以如(取電子裝 驟 置 j化之樹脂成分之樹脂組成物構成之;“二 表面供給後使乾燥而設置固定樹脂層. μ于於支持基材之 成間 疋樹脂層㈣前述電子零制定於㈣ ^ :'隔著刖边固 密封材層形成步驟，以密封材被覆前述^零件，在前述固 201233560 定樹脂層及前述電子零件上使密封材層形成; 密封材硬化步驟，藉由加熱前述密封材使前述密封材 獲得由前述支絲材所支持且配置有:紐電子料 ^ ’ 置密封材硬化物； 电千冬件配 剝離步驟’藉由將前述固定樹脂層加熱並使前述 分解，將前賴該支縣材所域之前述電子零件熱 化物從前述支持基材剝離； 置4封材硬 其特徵為: 5 前^固ϋί樹脂層形成步驟，係形成於靴之黏度為l〇Pa. s以上、10〇〇〇Pa · s以下之前述固定樹脂層。 勹層a (17)如(16)之電子裝置之製造方法，其中 步^；；前_子零伽定㈣述請紐上权i為 (28丄26)或(17)之電子裝置之製造方法，其巾，於前述電子 此接近之方 t，其中，友 50〜200。。。 ^其中，友 接近之方向，㈣.5〜12贿之壓力錢讀基材彼此 兩，， 、7… 〜％ j衣1<眾造万法，豆中，於此、+、汗 令件固^麵’對於祕f ?零倾前述 ^ 迷1 向以0.05〜IMPa之壓力進行加壓„ 、土材彼此接近之 如(^至(^任—項之電子裝置之®造方法，其中，於 〜20〇。〇。 =密封臟师，對於前雜^其中，於 前述密封材層形成轉，將前述料材加熱 (20)如(16)至(19)巾任-項之電子|置之〜00 C :宓私44· ja也〇·、土邮_处丨^、，. 衣k万/去’ (21)如(16)至(20)Ή壬一項之電子裂置之 刖述固定樹脂層形成步驟，前述固定樹脂芦二沾’命'、中，於 50〜ΙΟΟμιη之厚度形成。 a '、平句厚度為 (2¾ —種電子裝置之製造方法，包含以 固定樹脂層形成步驟，將由包含葬由 氣化之樹脂成分之職組成物構叙分解而溶融或 表面供給後使乾燥而設置固定樹脂層;日〗W丨對於支持基材之 電子零件固定步驟，以使得彼此相鄰 μ 隙的方式，在該固定樹脂層上配置多雷工=令+之間形成間 电十令件，並隔著前述固 201233560 定樹脂層而將前述電子零件固定於前述支持基材上. —您封材層形成步驟，以密封材被覆前述電子零件，在前述 定樹脂層及前述電子零件上使密封材層形成； 密封材硬化細離轉’藉自加熱前财册使前述密 硬化’獲得由前述支絲材所支持魏置有觀電子零件之 物，同時，藉由將前述固定樹脂層加熱並使 解，將㈣電子料配置密册硬化物從前述 其特徵為： S以樹脂層形成步驟，係形成於戰之黏度為10pa· s以上、l〇〇〇〇pa · s以下之前述固定樹脂層。 (23) 如(丨6)至(22)中任一項之電子裝置之製造方法，1 ΐΪΪίί係會Ϊ於對於前述暫時固定劑照射活性㉟量射線時，月. =二降低者’且在前述剝離步驟之前先對於前述固 疋树脂層照射前述活性能量射線。 (24) 如(23)之電子裝置之製造方法，其 2活Ξϊϊ分解之’且前述成物 此里射線之照射而產生酸或驗之活性劑。 分為聚碳嶋i(i)。之電子裝置之製造方法，其中，前述樹脂成 前述熱分解之溫度降低。扣疋義射活性成域線而使 莰烯(ηΐ(。26)之電子裝置之製造方法，糾，歧_成分為降 (28)如(16)至(27)中任一項之電早驻罢 土 線層形成步驟，該步驟魅前置之Α方法’更包含配 置有前述電子零件之面形成配二，密封f硬化物之配 子零件配置密封材硬化物。…u于开’成有麵線層之電 ㈣如歐電子裝置之製造方法，更包含單片化步驟，該步 10 201233560 驟係藉由將前述形成有配線層之前述電子变 予以分割，以將前述形成有配線層之前述 單片化，並獲得經單片化之前述電子4件配 (30) -種電子裝置封裝體之製造方法， 陳峨化之前述電子零件配置密封^ (31) —種半導體裝置之製造方法 包含以下步驟： 將^分解性之樹脂層配置於半導體晶圓與基材之間， 述樹脂層固定前述半導體晶圓與前述基材並形成疊層體. 將前述疊層體之前述半導體晶圓加工. 將前述疊層體加熱而將前述熱分解性之樹脂層予以轨分 使氣化； μ 將剞述半導體晶圓與前述基材予以分離. 其中’於將前述豐層體加熱而將前述熱分解性之樹脂層予以 熱为％而使氣化之如述步驟中，係藉由抽吸配置有前述疊層體之 容器中之氣體，使前述容如之氣體氛JU成為減壓下，並於減壓 下將前述疊層體加熱。 ’ (3¾如(31)之半導體裝置之製造方法，其巾，於將前述疊層體 加熱而將前述熱分解性之樹脂層予以熱分解而使氣化之前述步驟 中，係於lOOPa以下之氣體氛圍下加熱前述疊層體。 (33) 如(31)或(32)之半導體裝置之製造方法，其中，前述基材 係與半導體晶圓大致相同形狀之擬似晶圓，且係保護前述半導體 晶圓之熱分解性之樹脂層側之面者。 (34) 如(31)至(33)中任一項之半導體裝置之製造方法，其中， 於隔著前述樹脂層固定半導體晶圓與基材並形成疊層體之前述步 驟中， 係將構成前述熱分解性之樹脂層之樹脂組成物利用旋塗塗佈 在前述半導體晶圓或前述基材上並形成前述樹脂層，且隔著前述 11 201233560 樹脂層固定前述半導體晶圓與基材。 (35)如(33)或(34)之半導體裝置之製造方法，1中， 述半述半導體晶圓加工之前述^驟中，係將前 一^^”至丨35)中任—項之半導體裝置之製造方法，其中， i 脂層包含選自於由聚碳酸齡樹脂、聚醋系樹 聚酸亞胺系樹脂、聚胺甲酸®旨系樹脂、（甲基) 丙烯酉欠糸樹月曰構成之群組中丨種以上。 (37)如(36)之半導體裝置之製造方法，其中， 前述基材為透明基材，且 、十、層體之前述半導體晶圓加卫之前述步驟、與將前 ΐ而^述熱分解性之樹脂層予以熱分解而使氣化之 别迷步驟之間，貫施以下步驟： …前述透縣材’對於前述熱分解性之樹脂 =射活Ί讀線，賊麵齡雕之翻旨权熱分解溫度 (上=(3!1至(35)中任一項之半導體裝置之製造方法，其中， =熱分解性之樹脂層係崎_系樹 【發明之效果】 射梦ϊΓίϊϊ之實施職，於電子裝置之製造方法及電子裝置 照射，其熔峡觀層，動於潍能量射線之 材上歸繼，蝴基 於以ΐϊΐ子零件配置密封材硬化物從支持基材剝離時， ^封材;度ΐ111稍闕成秘雜態而瓣電子零件配置 =的損傷对實社電子轉或密珊發生賴硬 又’依照本發狀其他實_態，於電子錢之製造方法及 12 201233560 電子裝置封裝體之製造方法形成之固定樹脂層，於 s以下。 而低分子化，其結果纽融或氣化ί ,、在之黏度為l〇pa · s以上廟鞭& 所以，月b夠在厚度方向及橫方向均不發生 離的=’ 士支持基材上形成電子零件配置密位置偏 处，者，虽將電子零件配置密封材硬化物從支持基材士 度使固定樹脂層錄或氣化而將電子零件ϊΐ密 封材硬化物剝離，因此，能夠發揮減少對於電子 ^化物之損傷且讀實防止電子零件或密封材發生^裂等破 再者’依照本發明之另—實施形態，於半導 tic，，之樹脂層’係於減壓下將疊層體純並^解 解;脂!=會進行，能減;:熱分 卿，細晴繼彻晶圓之洗 【實施方式】 【實施發明之形態】 電子裝置之製造式:二說明本發明之 im:她 «第1實施形態>> 實絲11㈣置縣體。 圖施形態之縱剖面 圖i所示之電子裝置封下側記载為「下」: 入件(interp_)2G;與配置於^〃 配線電路19之掃 置)30。插入件2〇與電子穿 牛^ ^之電子裝置(料體裝 、置30 ’猎由各自具有之配線電路19與 13 201233560 凸塊18以電性連接。 能面12之下，設有與半導曰σ ，) ’ 體晶片11之機 之貫孔15並且於導電性之貫^ 15之^!^^^之導電性 導電性之於L丨5之下設置有=層Η，又， 及第2絕緣層17，再者之貝=連結之導體層16 之凸塊18。 I導體層16之下設置有與導體層16連結 狀通板)2G錢_付置3G之絲，其平峨臾㈣ 狀通“正方形、長方形等c察的形 環氧·氰酸醋•雙馬來酿亞胺三L f以聚酸亞胺· 插入件20之頂面(其中;^料構成。 導電性金屬材料構成之配線電路疋祕故置有例如鋼等 16 孔15係將半導體晶片11之端子(未®示_導體> 16以電性連接。可以僅在貫孔15之壁 、f ^體層 貫孔15全體形成導體層16。當 ―曰6’也可在 時’貫孔15之空隙宜以絕緣性之面械導體層μ 由銅貫孔15與凸塊18以電性連接，例如 性連之上之配線電㈣以電 兮Λ換π及7裝置0出之心，大致成球狀(Bal1狀）。又， 錫焊料、銀焊料、銅焊料、磷銅焊料之類的焊 <電子裝置封裝體之製造方法> 雷早之電子裝置封襄體(電子零件)10’可應用本發明之 电子裝置封裝體之製造方法例如以下列方式掣造。 月之 方; ϊ對5電子裝置封裝體1〇之電抒置封裝體之製造 方法之弟1實施形態説明。 =、，電子裝置封裝體10之製造方法之第丨實施形態， 包含以下步驟： 14 201233560 ===驟以面設置固定紙 固定樹脂層將前述電子零件固定在前述g‘上/ ^者刖述 密封材層形成步驟，以密封材被覆前述^子^ . 疋树脂層及前述電子零件上使密封材層形成.'在則述固 硬化密將ΐ述密封材加熱，轉前述密封材 零件配#蝴崎输㈣件之電子 紐驟，將㈣述支絲材所支狀前料子零件配置密 封材硬化物從前述支持基材剝離； Τ -⑸在 其特徵為:於舰獅步驟’藉Φ在對 :性能量躲後贿_定樹脂層加 v件配置畨封材硬化物從前述支持基材剝離。 本發明之第1實施形態令，係於如以上 =層照射活性能量射線後將固定樹脂層』=:= 固賴脂層為低。因此當於支持基材上形成電 ΐ^ί化物時，即使在其形斜難織歷，峡翻^之炫 j度也不會降低’故固定樹脂層上之t子零件不生位 勒ΐ將電子零件配封材硬化物從支縣材繼時，能以 =：：溫度使固定樹脂層縣湖離’所以能減少對於電子文件 ίΐίί材硬錄之娜且㈣實防止好轉或賴材發 圖2〜4係用於說明電子裝置封裝體1〇之製造方 之f意縱剖面圖’其中，當電子裝置封裝體1G以平面觀^ 2中之觀察面上側)時，配線牽引到電子裝置封褒體i。之二(， 側之再配置型之電子裝置3〇係配置在插入件20上。亦即，圖t Ϊ顯示本發明之電子敍職體之製造綠H f卿能夕 思縱剖面圖。又’以下説明中，圖2〜4中之上侧 I之ζ J 卜 15 201233560 侧記载為「下」。 [1]首先準備如圖2(a)所示之半導體晶片（電子零件)ιι、與支持 支持基板5Q只要是具有平坦性、剛直性及耐熱性者即可，不 特別限定，如本實施形態，係使用:在後述剝離步驟，利用隔著支 持基板50照射活性能量射線而使固定樹脂層6〇之熔融黏度降低 時’具有透光性者。藉此’能夠確實進行隔著支持基板5〇對於固 定樹脂層60照射活性能量射線。 、 具透光性之支持基板50，例如以石英玻璃、納玻璃之類的玻 璃材^、或料苯二價乙二_旨、聚萘二甲酸乙二醇醋、聚丙 稀、環烯煙聚合物、聚醯胺、聚碳酸!旨之類樹脂材料等作為主材 料構成之基板。 [2]其次，於支持基板50上(表面)形成固定半導體晶片η之固 定樹脂層60 (參照圖2(b);固定樹脂層形成步驟）。 該固疋嫩旨層6G ’為了能於後細碟層形成步驟以良好精度 形成配線，宜使膜厚均勻形成較佳。 、形成固定樹脂層60之方法’不特別限定，例如以旋塗法、印 =、分配 =形成液狀之固定樹脂層6〇之方法、將膜狀固定樹脂 層60予以層合之方法等。其中，從固定樹脂層6〇之膜厚均勾性 優異之無’健為將·之蚊觀層6G旋塗 之固定樹脂層60層合之方法。 以旋塗法、印刷法、分配法形成液狀之固定樹脂層6〇之方法， 不特別限定，可雜室溫呈餘之蚊麟層⑼或於室溫為固體 ，固疋樹麟6G溶於溶劑_釋_成的清漆狀的固定樹脂層 60使用公知之旋塗機、印刷機、分散機形成。 ιϋϊΐ狀之ΐ定樹脂層⑼層合之方法，不特別限定，可以 精由將；^狀之固定樹脂層6Q塗佈於聚乙稀、聚丙烯、聚對苯二 :酸乙二賴等基材膜並使乾燥，而製倾狀之固定樹脂層60， /、次使用公知之層合機等形成膜狀之固定樹脂層60。 在此，固疋樹脂層60係、由於活性能量射線之照射，其炫融溫 16 201233560 度會降低者，更具體而言，係包含樹脂組成物者，該樹脂組成物 包含:在酸或驗存在下其熔融黏度會降低之樹脂成分、與及會由於 前述活性能量射線之照射而產生酸或鹼之活性劑。 以下針對構成該固定樹脂層60所含之樹脂組成物之各成分依 序説明。 (樹脂成分） 樹脂成分，係於支持基板50上形成電子零件配置密封材硬化 物80時，具有將半導體晶片η固定於支持基板50之機能者。再 者，該樹脂成分由於當照射活性能量射線後進行加熱時其熔融黏 度比起照射未活性能量射線時為低，因此藉由在活性能量射線照 射後之加熱，能具有使電子零件配置密封材硬化物80容易從 基板50脱離之機能。 ^ 該樹脂成分只要是在酸或鹼存在下其熔融黏度會降低者即 可，不特別限定。例如:聚碳酸I系樹脂、聚醋系樹脂、聚醯胺系 樹脂、聚酸糸樹脂、聚胺甲酸醋系樹脂、（曱基)丙稀酸醋系樹脂等， 可以使用其巾1種或組合制 為樹脂成分 甲基)丙湘㈣樹驗佳，她_樹脂尤^。 该^於在酸紐存在τ其縣減會絲務低，故宜選用作 乙烯基系樹脂不特別限制，例如:聚苯 之類生物之聚合物、聚(乙基乙; 種或組合使_社。其中，_絲乙使用|中1 分，從作紐«之觀點_咖。*職佳w月曰成 丙烯酸系單體選⑽共聚物等τ該‘、各種(甲基) 聚甲基丙湘心旨較佳。卿旨成甲醋或 用。 *刀攸作業性優異之觀點特別適 17 201233560 再者，聚碳酸酯系樹脂不特別限制 .中含有聚丙稀碳_、聚乙烯碳酸§旨^=，_旨構成單元 狀化學構造而成者，或碳_構造單旨之類之直鏈 成者。該等之中，碳義構造單元^樣之化學構造而 較佳。該獅成纽健性健轉造而成者 酸咐咖^祕成之聚碳 具有2個環狀體較佳。藉由適合 P可為任思構成，但至少 體之數及種類，並以由聚碳酸醋系樹脂令之環狀 驗作用，能夠將其在產=或 又，環狀體之數為2〜5較佳、2式;t疋為如後述範圍内。 含如此數目的環狀體作為魏輯3彳，2又更佳。藉由以 能在活性能量射線昭射it ’固定樹脂層60會成為 支持基板50Λ 優異心纽料導體⑼丨1接合於 系構i，%====各自的頂點彼此連結之連結多環 造。藉此，碳_構造單元^平此連結之縮合多環系構 照射^於=之_度之_^=使活性能量射線 .Λ 夕數環狀體各為5員環或6員環較佳。此，更处俘 射線=前= 溶解性更為紋 ^更大，且料錄躲後述溶劑之 物時合物較佳。各環狀體為脂環化合 如以辦，侧構成單元例 18 201233560201233560 VI. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing an electronic device, a method of manufacturing an electrical component, an electronic device package, and a semiconductor package. The application is based on November 25, 2010. The Japanese clothes are too set and the method. 262929 Η 14 A Japan's special wish 2010-^ genus in this 楗 楗 ϋ 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 -278683 priority, the content of which is hereby invoked. , ', _ 69385 tiger master [previous technology] 4 years to deal with the requirements of the rapid development of the monthly force, the semiconductor chip ' ® Zhao wafer matching _ plus, the number of incoming lines depends on the area of the half-body wafer Therefore, there are limits on the number of wirings. *]"] 曰>; This problem and high-density installation, some people have proposed to choose the semiconductor ΐ ΐΓ ΐΓ , , , , , , , , , , , , , , , , , , , 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体The semiconductor component is singulated on the layer, and secondly, the hard g, s of the electronic zero (four) material is placed, and secondly, the contact surface of the electronic component with the adhesive layer is re-entered into the wiring to contain the electronic component. The outer diameter is further outside, thereby making the number of the \ \ / / line line corresponding to the high density 如 _ _: see Patent Document U. The adhesive layer used in the sealing device is required to be fixed to the support substrate with a sealing material of .., so that the electronic component can not be used for the firing of the sub-component; and the thermosetting of the sealing material can be It is easy to configure the electric stripping. The curing agent is peeled off from the support substrate provided with the adhesive layer. Further, the hardened material of the sealing material having the electronic component is preferably a problem of poor yield of the residual conductor of the non-adhesive layer or poor connection reliability. Dry 201233560 Slag adhesion. It is difficult for the adhesive layer of the private S to be known as the adhesive layer of the plastic, and it is difficult to make the electronic component not blister-type (for example, refer to 'Document f;) The function of the stripping of the board ^ ^ The sub-parts of the green lining, after the re-sequence of the Lai method, the handle, the 隹 -: the production can not easily _, dense: = set: _ the charm of the hybrid layer if attached to the problem In the case of the sealing material, the reliability of the electronic device is reduced. If the manufacturing process is performed, the semiconductor crystal is processed. Patent Documents 4 and 5 do not disclose the semiconductor dream as follows: The layer 900 such as a transistor is fixed to the donor substrate 902 via the adhesive layer 9〇1, and then the layer 900 is processed. Next, heat the = === temperature.峨 四 四 四 四 四 四 四 四 四 四 四 四 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体The problem of layer 900 and donor substrate 9〇2. When the wreckage is for a long time, it is necessary to carefully wash the _, and then the substrate 9G2 will be touched and the substrate 902 will be finely spliced. The manufacture of the semiconductor device is complicated. [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2006-287235 (Patent Document 2) Japanese Patent Laid-Open Publication No. 2005-191296 (Patent Document 3) Japanese Patent Application Publication No. 2Q04/0234717A1 [Patent Document 5]. U.S. Patent Application Publication No. 2 〇〇 4/〇 232 943 A1 No. 201233560 [Patent Document 6] Japan Japanese Laid-Open Patent Publication No. Hei 9-253964 [Draft of the Invention] [Problem to be Solved by the Invention] The object of the present invention is to provide a step of manufacturing a electronic device of a reconfigurable type, which is not in the position of an electronic zero-shaped position, and is not susceptible to brittle seams. If the part is damaged, the electronic device manufactured by the manufacturing method, the high reliability electronic device manufactured by the manufacturing method of the electronic device, the manufacturing method of the electronic device package including the electronic device, and the like A high-reliability electronic device package made by an electronic device sealing body. Another object of the present invention is to provide a semiconductor device that can reduce heat. The semiconductor device of the residual resin layer is a method for solving the problem. The object of the present invention can be achieved by the present invention described in the following (1) to (10). (1) A method for manufacturing an electronic device, comprising the following Step. The layering age is set, on the surface of Zhichenghuan, the electronic zero-steps, the bribes are adjacent to each other electronically-configure most electronic parts on the mosquito resin layer, and fix the resin layer to fix the aforementioned electronic parts. In the support substrate, the sealing material layer forming step is performed by coating the sealing material with the electric insulating resin layer and the electronic component to form a sealing material layer; and the π element is for the solid sealing material hardening step by Adding the foregoing sealing material to * to harden 'obtain the wire supported by the aforementioned supporting substrate to be provided with the sealing material of the sealing material; the electronic component is provided with (4) electronic parts. The prior sealing material hardened material is peeled off from the support substrate; the crucible is characterized in that: in the peeling step, the foregoing resin layer is heated after the fixing of the radiation And to make the smelting, the active energy sealing material cured material is peeled off from the support substrate. Then, the electronic component is arranged 201233560, the fat layer is melted = /, i is exhausted to make the aforementioned fixed tree (3⁄4 as (1) or ( 2) The method for manufacturing an electronic device, wherein the temperature at which the fixing resin layer is melted is 13 〇 2 〇〇ΐ :, the towel is _ _ gt; The method comprises the steps of: fixing the resin layer forming step, in the table of the supporting substrate. The electronic part-like step, so that the gaps adjacent to each other are arranged in the manner of arranging the electronic component on the fixed resin layer: and 卩 "fixing the resin layer will The electronic component is fixed on the support material and the metal material is covered with the sealing material, and the sealing material layer is formed on the solid wood layer and the electronic component; The stripping step 'by the above-mentioned support material is purely supported by the wire and arranged by the Yang said electronic two-yield (four) material hardened material, the same as the above-mentioned electronic transfer configuration of the poor seal hardened material from the aforementioned support substrate _; The reading material is characterized by: Shooting: ϊίΐ In the hardening crucible peeling step, the fixing resin layer is melted by heating the above-mentioned solid fat layer, and the electronic component placement material is hard-recorded and peeled off from the yarn. The method for producing a peeling device, wherein the sealing member is cured, and the temperature at which the fixing resin layer is melted is 130 to 20 (rc. benzene 2), and the manufacturing method of the electronic device is (5) or (6). The method for manufacturing an electronic device according to any one of (1) to (7), further comprising a wiring layer forming step, wherein the surface of the front surface is zero Ship's book hardening 201233560 The manufacturing method of the cow electronic device further includes a materialization step, the above-mentioned electronic component arrangement sealing material having a wiring layer is hardened, producing acid i; active it component; Carbonic acid vinegar due to the aforementioned active energy ray irradiation. The manufacturing method of the electronic device is as follows: the electronic device having the above-mentioned composition is a polyether, and is characterized in that it is ampouled with any one of (1) to (4). _Electronic parts with sealing material hardening seal = system, is: for example: (take the electronic component of the resin composition of the resin composition of the composition of the resin; "two surface supply, dry and set the fixed resin layer. μ In order to support the inter-base resin layer of the substrate (4), the electron zero is defined in (4) ^ : 'The step of forming the solid sealing material layer through the crucible, and covering the above-mentioned parts with the sealing material, and the above-mentioned solid 201233560 resin layer and the aforementioned electrons a sealing material layer is formed on the part; a sealing material hardening step, wherein the sealing material is supported by the foregoing supporting wire by heating the sealing material, and is configured with: a new electronic material, a sealing material hardened material; The peeling step is performed by heating the aforementioned fixing resin layer and decomposing the foregoing, and peeling off the aforementioned electronic component heat from the support material substrate from the support substrate; The solid resin layer forming step is formed on the fixed resin layer of the shoe having a viscosity of 1 〇Pa.s or more and 10 〇〇〇Pa·s or less. 勹 layer a (17) is an electronic device of (16) Manufacturing method, wherein step ^;; pre_sub zero Jiading (4) describes the manufacturing method of the electronic device of (28丄26) or (17), the towel of which is close to the above-mentioned electronic t, wherein the friend 50~200... Friends approaching the direction, (4). 5~12 bribe pressure reading money substrate two,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, For the secret f? zero tilting the above ^ fans 1 to pressurize with a pressure of 0.05 ~ IMPa „, the soil material is close to each other as (^ to (^任—the electronic device of the method of manufacturing, where, in ~20〇 〇。 = Sealing the dirty division, for the former miscellaneous ^, in the formation of the aforementioned sealing material layer, the above material is heated (20) such as (16) to (19) towel :宓私44· ja 〇 、·土邮_处丨^,,. 衣 k万/去' (21) such as (16) to (20) Ή壬 an electronic cracking of the fixed resin layer In the forming step, the fixing resin is formed in a thickness of 50 to ΙΟΟμ, and the thickness of the flat sentence is (23⁄4) a manufacturing method of the electronic device, comprising a step of forming a fixing resin layer, which is included Burial The composition of the resin component is decomposed and melted or the surface is supplied and dried to provide a fixed resin layer; and the method of fixing the electronic parts supporting the substrate so as to be adjacent to each other, in the manner A plurality of lightning strikes are arranged on the fixing resin layer to form an electric charge between the two, and the electronic component is fixed on the support substrate via the solid 201233560 resin layer. The electronic component is covered with a sealing material, and a sealing material layer is formed on the predetermined resin layer and the electronic component; and the sealing material is hardened and transferred, and the hardening of the sealing material is supported by the foregoing supporting wire. Wei sets the object of the electronic component, and at the same time, by heating and dissolving the fixed resin layer, the (4) electronic material is arranged to be hardened from the foregoing: S is formed by a resin layer, and is formed in the war. The above-mentioned fixing resin layer having a viscosity of 10 Pa·s or more and 1 〇〇〇〇pa · s or less. (23) The method of manufacturing an electronic device according to any one of (6) to (22), wherein 1 ΐΪΪ ί ί Ϊ 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于The aforementioned active energy ray is irradiated to the aforementioned solid resin layer before the peeling step. (24) The method of producing an electronic device according to (23), wherein the active material is decomposed and the active agent is generated by irradiation of the radiation. Divided into polycarbon 嶋i (i). In the method of producing an electronic device, the temperature at which the resin is thermally decomposed is lowered.疋 疋 疋 活性 活性 成 成 活性 活性 活性 活性 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ The step of forming a strike line layer, the step of the step of the front of the fascinating method further comprises forming a surface of the electronic component to form a second component, and sealing the material of the f-hardened material to configure a sealing material to be cured. The electric circuit of the upper layer (4), such as the manufacturing method of the electronic device, further includes a singulation step, wherein the step 10 201233560 is performed by dividing the aforementioned electrons having the wiring layer formed thereon to form the wiring layer. The singulation and the singulation of the above-mentioned electronic four-piece (30)-type electronic device package manufacturing method, and the above-mentioned electronic component arrangement sealing of the ^ 峨 ^ 31 31 31 ( ( ( ( ( ( ( ( ( ( ( ( ( Step: disposing a decomposable resin layer between the semiconductor wafer and the substrate, wherein the resin layer fixes the semiconductor wafer and the substrate to form a laminate. The semiconductor wafer of the laminate is processed. Heating the aforementioned laminate to the front The thermally decomposable resin layer is subjected to gasification by gas separation; μ separates the semiconductor wafer from the substrate, wherein 'the heat-decomposable resin layer is heated to % by heating the above-mentioned layered body In the step of vaporizing, the gas in the container in which the laminate is disposed is sucked, the gas atmosphere JU is decompressed, and the laminate is decompressed under reduced pressure. In the above-mentioned step of heating the above-mentioned thermally decomposable resin layer and vaporizing the above-mentioned thermally decomposable resin layer, the film is heated at 100 Pa in (31). The method of manufacturing a semiconductor device according to the above aspect, wherein the substrate is a pseudo wafer having substantially the same shape as the semiconductor wafer, and is protected by the semiconductor device. The method of manufacturing a semiconductor device according to any one of (31) to (33), wherein the semiconductor wafer is fixed via the resin layer In the foregoing steps of forming a laminate with the substrate, A resin composition constituting the thermally decomposable resin layer is spin-coated on the semiconductor wafer or the substrate to form the resin layer, and the semiconductor wafer and the base are fixed via the resin layer of 201213350 (35) The method of manufacturing a semiconductor device according to (33) or (34), wherein, in the above-mentioned semiconductor wafer processing, the first one is the first one to the other. The method for producing a semiconductor device according to the invention, wherein the i-lipid layer is selected from the group consisting of a polycarbonate resin, a polyester resin, a polyurethane resin, a polyurethane resin, and a (meth) propylene resin. (37) The method of manufacturing a semiconductor device according to (36), wherein the substrate is a transparent substrate, and the semiconductor wafer of the tenth layer is reinforced. The above steps are carried out between the step of thermally decomposing the resin layer which is thermally decomposed and the gasification is carried out, and the following steps are carried out: ... the above-mentioned thermal decomposition resin = shot Live reading line, thief face age carving turn the right thermal decomposition temperature (on = (3! 1 (35) The method of manufacturing a semiconductor device according to any one of the preceding claims, wherein the thermal decomposition resin layer is a saki _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , the melting gorge layer, moving on the material of the energy ray, the butterfly is based on the scorpion parts to seal the hardened material from the support substrate, ^ sealing material; degree ΐ 111 slightly 阙 秘 秘 而 而 而The electronic component configuration = the damage to the real electronic transfer or the Mishan is hard and the fixed resin layer formed according to the other method of the hair, the manufacturing method of the electronic money and the manufacturing method of the electronic device package of 12 201233560, Below s. And the result of low molecular weight, the result is yin or gasification, and the viscosity is l〇pa · s above the temple whip & therefore, the month b is enough to not leave in the thickness direction and the lateral direction = '士support base In the case where the electronic component is placed on the material, the sealing member is cured, and the electronic component sealing material is peeled off from the supporting substrate, and the electronic component and the sealing material cured product are peeled off. In order to reduce the damage to the electronic compound and to prevent the electronic component or the sealing material from being broken, etc., according to another embodiment of the present invention, the resin layer in the semi-conductive tic is decompressed. The laminate is pure and solved; the fat! = will be carried out, and it can be reduced;: The heat is divided into fine, and the fine is washed by the wafer. [Embodiment] [Form of the invention] Manufacturing method of the electronic device: Invention im: She «First Embodiment>> The solid yarn 11 (four) is placed in the county. Longitudinal section of the embodiment of the electronic device The side of the electronic device shown in Fig. i is referred to as "lower": the incoming member (interp_) 2G; and the scanning device 30 disposed in the wiring circuit 19. The electronic device of the insert 2 〇 and the electronic 穿 ^ ^ ^ ^ ^ 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30曰σ ,) ' The through hole 15 of the body wafer 11 and the conductive conductivity of the ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ 2 insulating layer 17, and further, the bump 18 of the connected conductor layer 16. Below the I conductor layer 16, there is a wire that is connected to the conductor layer 16) 2G money_paid 3G wire, and its flat (four) shape is "square, rectangular, etc. The raw amine III L f is formed on the top surface of the polyimide imidazole insert 20 (in which the material is formed. The wiring circuit composed of the conductive metal material is provided with a 16-hole 15-series semiconductor wafer 11 such as steel. The terminals (not shown) are electrically connected. The conductor layer 16 can be formed only on the wall of the through hole 15 and the entire f ^ body through hole 15. When the "曰6" can also be in the through hole 15 The gap is preferably electrically connected to the bump 18 by the copper via 15 and the bump 18 is electrically connected to the bump 18, for example, the wiring is electrically connected (4), and the π and 7 devices are out of focus. In the form of a spherical shape (Bal1 shape), soldering such as tin solder, silver solder, copper solder, and phosphor bronze solder <Method of manufacturing electronic device package> Raytheon electronic device sealing body (electronic part) 10 'The manufacturing method of the electronic device package to which the present invention can be applied is, for example, fabricated in the following manner. The side of the moon; the power of the 5 electronic device package The first embodiment of the manufacturing method of the package is described. The second embodiment of the method for manufacturing the electronic device package 10 includes the following steps: 14 201233560 ===The surface of the fixed paper fixing resin layer is set The electronic component is fixed on the above g'/there is a description of the sealing material layer forming step, and the sealing material is coated with the sealing material. The resin layer and the electronic component are formed on the electronic component to form a sealing material layer. ΐ 密封 - (5) 加热 - (5) The first embodiment of the present invention is characterized in that: in the ship lion step 'by Φ in the pair: sexual energy to hide the bribe _ the resin layer plus the v piece arrangement 畨 the sealing material cured material is peeled off from the support substrate. After the above-mentioned layer is irradiated with the active energy ray, the fixed resin layer 』=:= the solid lyophilized layer is low. Therefore, when the electric sputum is formed on the supporting substrate, even if it is difficult to etch the ridge, the gorge Turning over the brightness of the j will not lower the 'fixed tree The sub-parts on the layer do not produce a position. When the electronic parts are sealed with the hardened material from the branch, the temperature of the fixed resin layer can be reduced by =:: temperature can reduce the number of electronic files. In the case of the electronic device package 1G, the electronic device package 1G is used in the plan view. When the upper side is observed, the wiring is drawn to the electronic device sealing body i. (The side reconfigurable electronic device 3 is disposed on the insert 20. That is, the figure t Ϊ shows the electronic narration of the present invention. In the following description, in the following description, the upper side I of Figures 2 to 4 is referred to as "lower" on the side of 2012. [1] First, the semiconductor wafer (electronic component) ι and the support supporting substrate 5Q shown in Fig. 2(a) are not particularly limited as long as they have flatness, rigidity, and heat resistance, and the present embodiment is not limited thereto. In the peeling step described later, when the active energy ray is irradiated through the support substrate 50 and the melt viscosity of the fixed resin layer 6 is lowered, the light transmittance is exhibited. Thereby, it is possible to surely irradiate the fixed resin layer 60 with the active energy ray via the support substrate 5 . The light-transmissive support substrate 50 is, for example, a glass material such as quartz glass or nano glass, or a benzene divalent ethylene glycol, polyethylene naphthalate, polypropylene, or cyclomethine polymerization. A substrate made of a material such as a polyamide, a polycarbonate, or a resin material. [2] Next, a fixing resin layer 60 for fixing the semiconductor wafer η is formed on the surface (surface) of the supporting substrate 50 (see Fig. 2(b); fixing resin layer forming step). In order to form the wiring with good precision in the post-fine-disk layer forming step, the solid-state layer 6G' is preferably formed to have a uniform film thickness. The method of forming the fixing resin layer 60 is not particularly limited, and examples thereof include a spin coating method, a printing method, a method of forming a liquid-like fixing resin layer 6〇, and a method of laminating the film-shaped fixing resin layer 60. Among them, a method in which the fixing resin layer 60 which is excellent in the film thickness of the fixing resin layer 6 is laminated, and the fixing resin layer 60 which is spin-coated with the mosquito layer 6G is not laminated. The method of forming the liquid fixing resin layer 6 by spin coating, printing or dispensing is not particularly limited, and may be a mixture of the remaining layers of the mosquito layer (9) at room temperature or solid at room temperature, and the solid eucalyptus 6G is dissolved in the solvent. The varnish-like fixing resin layer 60 is formed using a known spin coater, a printing machine, or a disperser. The method of laminating the resin layer (9) is not particularly limited, and the fixing resin layer 6Q can be applied to a base such as polyethylene, polypropylene, polyparaphenylene: acid The film is dried and dried, and the fixed resin layer 60 is formed into a film shape, and the film-shaped fixing resin layer 60 is formed by using a known laminator or the like. Here, the solid resin layer 60 is degraded by the irradiation of the active energy ray, and the brightness of the glass is reduced by 16, 201233560 degrees. More specifically, it is a resin composition containing: in acid or There are a resin component whose melting viscosity is lowered and an active agent which generates an acid or a base due to the irradiation of the above-mentioned active energy ray. Hereinafter, the respective components constituting the resin composition contained in the fixing resin layer 60 will be described in order. (Resin component) The resin component is a function of fixing the semiconductor wafer η to the support substrate 50 when the electronic component placement sealing material cured material 80 is formed on the support substrate 50. Further, since the resin component has a low melt viscosity when heated by irradiation with an active energy ray, it is lower than when the active energy ray is irradiated. Therefore, by heating after the active energy ray irradiation, the electronic component can be provided with a sealing material. The function of the cured product 80 to be easily detached from the substrate 50. ^ The resin component is not particularly limited as long as it has a low melt viscosity in the presence of an acid or a base. For example, a polycarbonate I resin, a polyester resin, a polyamide resin, a polyamic acid resin, a polyurethane resin, a (meth) acryl resin, or the like, one type of towel or The combination is made of resin component methyl) propylene (four) tree is good, she _ resin is especially good. The presence of τ in the acid nucleus is lower in the county, so it is not particularly limited to be selected as the vinyl resin, for example, a polymer of polyphenyl or the like, poly (ethyl b; species or combination _社. Among them, _ silk B use | in 1 point, from the point of view of the new « _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The purpose of Bingxiang is better. The purpose of the company is to be used in the form of vinegar. * The viewpoint of excellent workability is particularly suitable. 2012-0360 In addition, polycarbonate resin is not particularly limited. It contains polypropylene carbon _, polyethylene carbonate § It is intended to constitute a unitary chemical structure, or a linear chain such as a carbon-structure. The chemical structure of the carbon-based structural unit is preferred. It is better to have two kinds of rings, and it is preferable to use P, which is composed of at least P, and at least the number and type of the body, and The resin is subjected to a ring-like test, and it can be produced or =, the number of the ring is 2 to 5, preferably 2; t疋 is within the range as described later. The ring body is as good as Wei 3, and 2 is better. By being able to fix the resin layer 60 in the active energy ray, the fixed resin layer 60 becomes a supporting substrate 50 Λ the excellent core conductor (9) 丨 1 is bonded to the structure i, %====The respective vertices are connected to each other by a multi-ring. Thereby, the carbon_structural unit is flattened by the condensed polycyclic structure of the connection, and the active energy ray is made. It is preferable that each of the circumscribed rings is a 5-membered ring or a 6-membered ring. In this case, the ray is more visibly = the former is more soluble, and the composition is better. The ring body is an alicyclic compound, and the side constituent unit is an example 18 201233560

OMHC I ο 1/ 1 a匕，述化學式⑴表示之碳酸醋構成I元之聚碳酸 ^得"。9 絲二醇、與如雜二勒旨之碳酸二@旨之縮聚反應 又，以上述化學式(1)表示之碳酸酯構成單元中，十氫举二醇 ii 2基所_之碳原子’較佳為各與構成十氫萘(亦即，形成 夕壞系構造之2個環狀體)之其他碳原子鍵結並且在與該等經 土鍵結之碳原子之職人有3做上之原子。藉此，可確保聚碳 ，醋之直祕，其結果，能將活性能魏線照驗後於則。c之溶 融黏度之差異更確實地設定為大。再者能使對於後述溶劑之溶 性更為安定。 如此之碳酸酯構成單元’例如:以下列化學式(1A)、（iB)表示 者。 ’、OMHC I ο 1/ 1 a匕, the carbonated vinegar represented by the chemical formula (1) constitutes the polycarbonate of the I element. a polycondensation reaction of 9-methane diol and a carbonic acid group as described in the above formula (1). In the carbonate structural unit represented by the above chemical formula (1), the carbon atom of the dehydrogenated diol ii 2 group is Preferably, each of the carbon atoms constituting the decalin (i.e., the two rings forming the sinus structure) is bonded to each other and is bonded to the carbon atom bonded to the earth. . Thereby, it is possible to ensure the directness of the polycarbon and the vinegar, and as a result, the active energy can be examined after the test. The difference in the melt viscosity of c is more surely set to be large. Further, the solubility of the solvent described later can be made more stable. Such a carbonate constituent unit' is represented, for example, by the following chemical formulas (1A) and (iB). ’,

再者，多數環狀體’除了為脂環化合物以外’也可為雜贿環 化合物。各環狀體為雜脂環化合物時，也能使如前述效果更 發揮。 .、、、考 於該情形，聚碳酸酯(樹脂成分)中，碳酸酯構成單元以例如. 19 201233560 下列化學式(2X)表示者為尤佳構造。Further, most of the cyclic body 'besides an alicyclic compound' may also be a heterocyclic compound. When each of the cyclic bodies is a heteroalicyclic compound, the above effects can be further exerted. In this case, in the polycarbonate (resin component), the carbonate constituent unit is, for example, a preferred structure represented by the following chemical formula (2X).

o=co=c

X 又，具有以上述化予式(2X)表不之碳酸酿構成單元 酯’可藉由下列化學式(2a)表示之醚二醇、與如碳 ♦厌-' 二酷之縮聚反應獲得。 成-本i旨之碳酸Further, X, which has the carbonic acid constituting unit ester represented by the above formula (2X), can be obtained by a polycondensation reaction of an ether diol represented by the following chemical formula (2a) with, for example, carbon ana-'. Cheng-ben

(2a) 又 上述化學式(2X)表示之碳酸賴成單元巾，以上述化 子式(2a)表不之ί哀狀醚二醇具有之羥基所鍵結之碳原子，較佳 鍵結於構成上述環魏(亦即，形成縮合辦j 狀體 之碳原子錄轉碳原子之_人有3個以上之原子。=狀 之分解性，其結雜鮮錄錄_射^後於 胃妓。再者，自_於後述溶 如此之碳酸醋構成料，例如以下列化學式⑽表示之μ : 二^ '山梨醇(異山梨酯(iS〇S〇rbide))型，或下列化學式(2Β) 录不之I，4 . 3,6-二去水_D·甘露醇(去水甘露糖醇(is〇mamide))型。 20 201233560(2a) Further, the carbonic acid-based united towel represented by the above chemical formula (2X) is preferably bonded to the carbon atom bonded to the hydroxyl group of the ether glycol of the above formula (2a). The above-mentioned ring Wei (that is, the carbon atom which forms the condensation of the j-shaped body has a carbon atom and has more than three atoms. The decomposition of the shape is marked, and the result is recorded in the stomach. Further, since the carbonated hydrate composition is dissolved as described later, for example, μ is represented by the following chemical formula (10): sorbitol (iS〇S〇rbide) type, or the following chemical formula (2Β) No I,4. 3,6-two dehydrated _D·mannitol (is〇mamide) type. 20 201233560

(2A)(2A)

ο II 〇—c- ,μα 叫里里于岣分子量(Mw)為1,000〜 ^ ’000g ’ 更佳。藉域重量平均分子量為上 上，於本麵可具有提高樹驗成㈣於支持基板5〇之 ㈤之效果’再者可麟固频脂層6G之成赚提高效果。 娜ϋ旨成分’以樹脂組成物之全量之約1〇〜100重量%之比 3pg〜igg重量％之比娜合更佳。藉由使樹脂成分 斟下限似上’能夠使後述剝離步驟後’樹脂組成物 S3 ίί置密封材硬化物80之密合性確實減低。所以，於 零件配置密封材硬咖之樹脂組 (活性劑） 活性劑，係藉以活性能量射線照射施加能量，會發生如 州，織細脂成分之 之#==!不ί別限定，例如由於活性能量射線照射而產生酸 等。-*肖彳’或由於活性能量射線騎而產纽之光鹼發生劑 =:=(， -第三丁溫= η、糾〆）—本基鉴二氟曱磺酸鹽(TPS-Tf)、雙(φ_第三丁 ίίί Γί^Γ=βΓ骨、謂(购G1)、三苯《六 ⑽·1〇3)、二苯基鎏雙(全氟伐俩亞 TPS Ν1)、一(對第二丁基)苯基鎖、雙(全氟甲貌石黃酸基)酿亞胺 21 201233560 (Drapifi)、二苯基鎏、參(全說甲烧石練基)甲基化物(挪-⑶、 =(對第三丁基苯基)鐄參(全氟甲炫石黃醯基)甲基化物防肥 等’可將其中1種或2種以上組合使用。該等之中豆 分之錄紐之齡，触鱗(錢苯i)硼酸根 _4_甲基本基㈣1-甲基乙基)苯基]錤(DPI-TPFPB)。 又，光鹼發生劑不特別限定，例如苄基_丨，5_二氮雜雙環 (4.3.0)壬烧、1_(2_硝基苯甲醯基胺甲驢基)咪唾等，可將呈^ 組ΐ使用。料之巾，尤其’财效舞^脂成分 較佳為5·輸—丨，5·二氮雜雙環(綱壬烧及 前述活性劑，為樹脂組成物全量之約0.01〜50重量％較佳，約 更佳。藉由在該細1敎地使旨成分之溶 融黏度降低至目的範圍内。 ，由如狀潍狀添加，麵祕性能量祕，則會發生 如酉义或驗之活性㈣，且推測由於該活性师 之主鏈形成魏融黏度降低之構造。 ^77 (增感劑） 又，樹脂組成物，較佳為包含活性劑且同時包含且有使對於 性能量射線之活性劑之反應性表現或增大之機能的 成分即增感劑。 前述增感劑不特別限定，例如：蒽、菲、筷、苯 (benzpyrene)、诤(fluoranthene)、紅螢烯(mbrene)、祐卩山酮 (xanthone) '陰丹士林染料(indanthrene)、嗟噸__龜略9酉同、 2異丙基-9H-噻噸（thi〇xanthene)_9_酮、4_異丙基_9Ή_噻 丙氧基麵_、及該等之混合物等。' 如此之增感劑之含量，相對於前述活性劑觸重量份，為1〇 量份以下較佳’ 50重量份以下更佳。 (酸捕捉劑） 再者，樹脂組成物例如也可含有酸捕捉劑。 酸捕捉劑，係具有防止由於活性能量射線照射而產生之酸擴 22 201233560 散到土照射活性能量射線之部位的機能的成分。 前述酸捕捉劑，例如:三(正丙基)胺、三乙胺、以下列(2)表示 之化合物、及以下列(3)表示之化合物等為代表之胺(二級胺、三級 胺）、及該等之混合物等。 (2) 通式(2)中，R1為Η、或燒基。ο II 〇-c- , μα is 里 岣 岣 岣 岣 molecular weight (Mw) is preferably 1,000~ ^ ‘000g ’. The weight average molecular weight of the borrowing region is above, and the effect of improving the tree (4) on the supporting substrate (5) can be improved on the surface, and the effect of the 6G of the solid phase fat layer 6G can be improved. The ratio of the total amount of the resin composition is about 1 〇 to 100% by weight of the total amount of the resin composition, and the ratio of 3 pg to igg is more preferably. The adhesion of the resin composition S3 ί to the sealing material cured product 80 after the peeling step described later can be surely reduced by making the lower limit of the resin component 上. Therefore, in the component configuration sealing material hard coffee resin group (active agent) active agent, by the application of energy by active energy ray irradiation, it will occur as a state, woven fine fat component #==! The active energy ray is irradiated to generate an acid or the like. - * 肖彳' or photobase generator due to active energy ray riding =:=(, -Third Ding temperature = η, 〆) - Benji Teflon sulfonate (TPS-Tf) , double (φ_third 丁ίίί Γί^Γ = β Γ bone, said (purchasing G1), triphenyl "six (10) · 1 〇 3), diphenyl bismuth (perfluoro valerian TPS Ν 1), one ( For the second butyl) phenyl lock, bis (perfluoromethyl-derivative), imine 21 21335335 (Drapifi), diphenyl hydrazine, ginseng (all said to be a stone) methide -(3), =(p-tert-butylphenyl) hydrazine (perfluoromethane fluorescein) methide anti-fertilizer, etc., one or two or more of them may be used in combination. New age, touch scale (money benzene i) borate _4_methyl base (tetra) 1-methylethyl) phenyl] hydrazine (DPI-TPFPB). Further, the photobase generating agent is not particularly limited, and examples thereof include benzyl hydrazine, 5 diazabicyclo (4.3.0) oxime, and 1 (2 nitrobenzoguanidinomethyl hydrazino). Will be used in groups. The towel of the material, in particular, the 'fat effect' is preferably 5, 丨, 5, 5, diazabicyclo (anthraquinone and the aforementioned active agent, preferably about 0.01 to 50% by weight of the total amount of the resin composition). Preferably, the melting viscosity of the component is reduced to the target range in the fineness of the sputum, and the cryptic energy is secreted in the form of a scorpion, and the activity such as ambiguity or test (4) occurs. It is presumed that the main chain of the active artist forms a structure in which the viscosity of Wei Rong is lowered. ^77 (sensitizer) Further, the resin composition preferably contains an active agent and simultaneously contains an active agent for sexual energy rays. The sensitizer is not particularly limited as long as it is a component of reactive performance or increased function. For example, bismuth, phenanthrene, chopsticks, benzpyrene, fluoranthene, brene, woo Xanthone 'indanthrene', indone __ turtle 9 酉, 2 isopropyl-9H-thioxan (thi〇xanthene) _9_ ketone, 4 isopropyl _ 9Ή_Thiopropyloxy surface _, and mixtures of the same, etc. 'The content of such sensitizer, relative to the weight of the aforementioned active agent, Preferably, the amount is preferably 50 parts by weight or less. (Acid scavenger) Further, the resin composition may contain, for example, an acid scavenger. The acid scavenger has an acid which prevents generation due to irradiation with active energy rays. 22 201233560 A component of the function of the portion of the active energy ray that is scattered to the earth. The acid scavenger is, for example, tris(n-propyl)amine, triethylamine, a compound represented by the following (2), and the following (3) The compound represented by the compound or the like is a representative amine (secondary amine, tertiary amine), a mixture thereof, etc. (2) In the formula (2), R1 is an anthracene or a calcined group.

R4 (3) ⑶中’R〜R6為11、或任意2個為甲基且其餘為氫。 、畜=、ί之中，使用選自於由以上述通式(2)表示之化合物、上述 之化合物構成的群财至少1種化合物較佳，使用上 更佳。觀，驗細旨城減為對於活 線之部位之炫低且同時能夠有效防止未照射活性能量射 捉1 之含量，相對於前述活性劑100重量份，為 射、碰,t 佳’_〜8重量份更佳。藉此，能姐防止未昭 射活性此置射線之部位之熔融黏度降低。 禾… (抗氧化劑） 又，樹脂組成物也可含有抗氧化劑。 物能具有防止不理想的酸發生、或防止樹脂組成 ，抗 =劑不特別限定，理想者例如:Ciba Fine micals 么司製、「Qba irgan〇x(古主 IRGAFOS(註冊商標)168」。 （"冊商仏）贏」及「Ciba 又，其他抗氧化劑，例如也可使用「咖lrgan〇x(註冊商標） 23 201233560 129」、「Ciba Irganox 1330」、「aba Irg_x 1〇In R4 (3) (3), 'R to R6 are 11, or any two are methyl groups and the rest are hydrogen. In the case of the animal, it is preferable to use at least one compound selected from the group consisting of the compound represented by the above formula (2) and the above compound, and it is more preferably used. The view and the fine-grained city are reduced to the low level of the live line and at the same time, the content of the unirradiated active energy shot 1 can be effectively prevented. For the 100 parts by weight of the active agent, it is shot, touch, and t is good. 8 parts by weight is more preferred. Thereby, the sister can prevent the melt viscosity of the portion where the radiation is not irradiated from being lowered. Wo (antioxidant) Further, the resin composition may also contain an antioxidant. The material can prevent undesired acid generation or prevent resin composition, and the anti-agent is not particularly limited. For example, Ciba Fine micals, "Qba irgan〇x (古主IRGAFOS (registered trademark) 168" is preferable. "册商仏)Win" and "Ciba", other antioxidants, for example, "largan〇x (registered trademark) 23 201233560 129", "Ciba Irganox 1330", "aba Irg_x 1〇"

Cyan〇x(註冊商標）m〇」、「Ciba Irgan〇x 3ii4」、「ciba Irganox 3125」等。 前述抗氧化劑之含量，相對於前述樹脂成分1〇〇重量 0.1〜10重量份較佳，0 5〜5重量份更佳。 (添加劑） 又二樹脂組成物，視需要也可含有丙烯酸系、矽酮系、氟系、 乙烯基系等塗平劑、矽烧偶聯劑等添加劑等。 一前述矽烷偶聯劑雖不特別限定，例如:3_環氧丙氧基丙基三甲 氧^矽烧、3-環氧丙氧基丙基甲基二乙氧基石夕烧、3_環氧丙氧基丙 基二乙氧基石夕烷、對苯乙烯基三曱氧基石夕烷、3_曱基丙烯醯氧基丙 基曱基二甲氧基石夕烷、3_甲基丙烯醯氧基丙基三曱氧基石夕烷' 3_ 甲，丙烯輒絲基甲基二乙氧基;5減、3_曱基丙烯輒基丙基三 乙氧基矽烷、3-丙烯醯氧基丙基三甲氧基矽烷、N_2_(胺基乙基)_3_ 胺基丙基甲基二甲氧基矽烷、N_2_(胺基乙基)_3_胺基丙基三f氧基 ^烧、N-2-(胺基乙基)-3-胺基丙基三乙氧基石夕烧、3·胺基丙基三曱 氧基石夕烷、3-胺基丙基三乙氧基石夕烧、N-苯基_3_胺基丙基三甲氧 基矽烷、3-巯基丙基曱基二甲氧基矽烷、3_巯基丙基三甲氧基矽 烧、雙(二乙氧基丙基)四硫醚、3-異氰酸醋丙基三乙氧基石夕烧等， 可士單獨使用也可混用2種以上。構成固定樹脂層6〇之樹脂組成 物藉由含有矽烷偶聯劑，具有提高對於半導體晶片n或支持基板 50之密合性的效果。 (溶劑） 再者，樹脂組成物也可含有溶劑。 一溶劑不特別限定，例如:茱、十氫萘、礦精(mineral spirit)類等 烴類、苯曱醚、丙二醇單甲醚、二丙二醇曱醚、二乙二醇單乙醚、 —甘二甲酸等醇/醚類、碳酸伸乙酯、乙酸乙酯、乙酸正丁酯、乳 酸乙S旨、3-乙氧基丙酸乙g旨、丙二醇單曱_乙酸酯、二乙二醇單乙 醚乙酸酯、碳酸伸丙酯、γ-丁内酯等酯/内酯類、環戊酮、環己酮、 甲基異丁酮、2-庚酮等酮類、Ν-曱基-2-°比洛《定酮(N-methyl-2- 24 201233560 pyrrolidinone)等醯胺/内醯胺類，可使用其中1種或將2種以上組 合使用。樹脂組成物藉由含有溶劑，能容易調整樹脂組成物之黏 度’且在支持基板5〇形成含有樹脂組成物之固定樹脂層⑼备 得容易。 日文 前述溶劑之含量不特別限定’為樹脂組成物全量之5〜98 %較佳’ 10〜95重量％更佳。 里 本發明之第1實施形態中，活性能量射線照射後固定樹脂層 60於180°C之炫融黏度設定為0 01〜100Pa s較佳，係設定樹脂^Cyan〇x (registered trademark) m〇, "Ciba Irgan〇x 3ii4", "ciba Irganox 3125", etc. The content of the antioxidant is preferably 0.1 to 10 parts by weight, more preferably 0 5 to 5 parts by weight, based on 1 to 10 parts by weight of the resin component. (Additive) The resin composition may contain an additive such as an acrylic, an anthrone, a fluorine-based or a vinyl-based coating agent or a terpene coupling agent, as needed. The aforementioned decane coupling agent is not particularly limited, and examples thereof include: 3-glycidoxypropyltrimethoxy oxime, 3-glycidoxypropylmethyldiethoxy sulphur, and 3-epoxy Propyloxypropyldiethoxy aspartame, p-styryltrimethoxyoxylinane, 3-mercaptopropenyloxypropylmercaptodimethoxycarbazide, 3-methacryloxyloxy Propyltrimethoxy Oxetane 3_A, propylene fluorenylmethyldiethoxy; 5 minus, 3_mercaptopropenylpropyltriethoxydecane, 3-propenyloxypropyltrimethyl Oxydecane, N 2 -(aminoethyl)_3_aminopropylmethyldimethoxydecane, N 2 -(aminoethyl)_3_aminopropyltrifoxylate, N-2-(amine Ethyl ethyl)-3-aminopropyltriethoxy oxalate, 3·aminopropyltrimethoxy oxetane, 3-aminopropyltriethoxy sulphur, N-phenyl _3 _Aminopropyltrimethoxydecane, 3-mercaptopropylmercaptodimethoxydecane, 3-mercaptopropyltrimethoxysulfonium, bis(diethoxypropyl)tetrasulfide, 3-iso Cyanic acid propyl triethoxy sulphur, etc., may be used alone or in combination of two or more. The resin composition constituting the fixing resin layer 6 has an effect of improving the adhesion to the semiconductor wafer n or the supporting substrate 50 by containing a decane coupling agent. (Solvent) Further, the resin composition may contain a solvent. A solvent is not particularly limited, and examples thereof include hydrocarbons such as hydrazine, decahydronaphthalene, and mineral spirits, benzoin ether, propylene glycol monomethyl ether, dipropylene glycol oxime ether, diethylene glycol monoethyl ether, and glycidic acid. Such as alcohol/ether, ethyl carbonate, ethyl acetate, n-butyl acetate, lactic acid ethyl, 3-ethoxypropionic acid, propylene glycol monoterpene acetate, diethylene glycol monoethyl ether Esters such as acetate, propyl carbonate, γ-butyrolactone/lactone, cyclopentanone, cyclohexanone, methyl isobutyl ketone, 2-heptanone, etc., fluorenyl-fluorenyl-2- In the case of a guanamine or a decylamine such as N-methyl-2-24 201233560 pyrrolidinone, one type or two or more types may be used in combination. The resin composition can easily adjust the viscosity of the resin composition by containing a solvent, and it is easy to form a fixing resin layer (9) containing a resin composition on the support substrate 5 . The content of the solvent in the above is not particularly limited, and is preferably from 5 to 98% by weight of the total amount of the resin composition, and more preferably from 10 to 95% by weight. In the first embodiment of the present invention, after the active energy ray is irradiated, the fixing resin layer 60 is set to have a viscous viscosity at 180 ° C of 0 01 to 100 Pa s.

成物中所含之上述各種構成材料，尤其樹脂成分及活性劑之纟且合 及該等含量，以設定為該範圍内。 、D 。若為如此，暫時固定劑(樹脂組成物），藉由將其於約130〜 =(TC之、溫度範圍加熱，能使固定樹脂層6〇成為熔融狀態，再者 旎成為容易使電子零件配置密封材硬化物8〇從支持基 之程度巧融黏度者。其結果，從支持基板5〇脫離(剝離)電g 件配置密封材硬化物8G，能於不使構成電子料配置密封材硬^匕 物80之半導體晶片u及密封材層7〇產生龜裂等損傷而輕易進行。 又，活性能量射線照射後，暫時固定劑於18(rc之熔融黏度為 ^〇l:100Pa.s較佳’但尤佳為約01〜10Pa s。藉此能更為顯著發 月1J述效果。 又，活性能量射線照射前於18〇。(：之熔融黏度不特別限定，為 約2〇0〜10000Pa.s較佳，約1〇〇〜1〇〇〇Pa s更佳。藉此即使在電' 子零件。配置密封材硬化物80形成時將固定樹脂層6〇加熱到例如 ，i8〇°c’固定樹脂層60仍能具有將半導體晶片η固定於支持芙 反50所需的足夠強度。其結果，於電子零件配置密封材硬化物& g成時，能確實防止半導體晶片丨丨發生從支持基板5〇之位置偏 ，者，當活性能量射線照射前固定樹脂層60於180它之熔融 黏度定為A[Pa.s]，且活性能量射線照射後固定樹脂層6〇於18〇它 之熔融黏度定為B[Pa.s]時，A/B滿足1〇〇〜1〇000之關係較佳，_ . 滿足200〜1000之關係更佳。藉由使A/B滿足該關係，當電子零件 25 201233560 配置密封材硬化物80形成時，能以固定樹脂層6〇確實地將半導 體晶片11固定於支持基板50，且當電子零件配置密封材硬化物 80從支持基板50脱離時，電子零件配置密封材硬化物8〇能從支 持基板50輕易地脱離。 又’固定樹脂層60之熔融黏度可使用流變計法測定。 具體而言，將暫時固定劑之溶液塗佈於矽基板上，於熱板上 以120Ϊ使乾燥300秒，將作為活性能量射線之來自超高水銀燈 之光線以波長365nm換算照射2〇〇〇mJ/cm2後’將由暫時固定劑^ 構成的厚度5〇μτη之膜從石夕基板剝離’並以流變計田aake RS^ 型、Thermo Fischer Scientific公司製)測定熔融黏度(間隔： 3〇μιη、升溫速度：1〇0C/分、測定溫度範圍：3〇〜3〇(rc、頻率^ 1Hz) ’以180°C之熔融黏度作為測定値而求出。 —^，對於固定樹脂層60進行之活性能量射線照射不特別限 定’較佳為將波長365nm之光以2000mj/cm2照射進行。藉由定為 該條件，能使來自於活性劑之如酸或鹼之活性物質產生足量，能 確實利用該活性物質之作用減低樹脂成分之熔融黏度。故，可^ 想地作為照射於固定樹脂層6〇之活性能量射線之條件。 # g]其次，在固定樹脂層60之上配置半導體晶片^，並且隔 著固定樹脂層60在支持絲％之上固定半_晶片i【(參照 2(c)，電子零件固定步驟）。 ’配置半導體晶片11時，係將具端子(未圖示)之面朝下(與 固疋樹脂層6G接觸之面)配置。又，配置半導體晶片1]L時，為了' 使於後述崎層形齡職以良好精度形成崎層， 穷 / ^1 · · - ’可藉由應用覆晶支座 (flip chip holder)，將半導體晶片u精密配置。 半導體晶片11對於固定樹脂層6〇之固定，不特別限定，於 為液狀時，可以僅用加壓(僅包含半導體晶片11本 〜。又，固定樹脂層6G細體時，視需要可以藉由適 料導體^ n。前述加熱溫度稱別限定， 較佳，80〜180 C尤佳。又，前述加壓為0.05〜IMPa較 26 201233560 佳’ 0.1〜0.8MPa尤佳。再者，加熱及加壓時間為〇1〜3〇秒較佳、 1〜15秒尤佳。藉由使加熱及加壓條件為上 固定半導體晶U及防止料體晶片u之破損或^&達者成確只 [4]其次’以密封材被覆相鄰之半導體晶片^之間隙及 J)片。η之方式’形成密封材層70(參照圖2(d);密封材層形 + 成步 來料體晶片11，包含完全被覆料體晶片11的情 體晶片11時，電子裝置30之可靠性良好故為L r全破覆+導 ，密封材形成密封材層70之方法不特別限定，例 ί总形法、射出成形法等，較佳為顧定的半U片ΐίThe above various constituent materials contained in the product, in particular, the resin component and the active agent, and the contents thereof are set within the range. , D. In this case, the temporary fixing agent (resin composition) can be heated in a temperature range of about 130 to = (TC, the fixed resin layer 6 can be in a molten state, and further, the electronic component can be easily disposed. The cured material of the sealing material is entangled from the support base. As a result, the sealing material cured material 8G is disposed by being detached (peeled) from the support substrate 5, so that the sealing material can be prevented from being formed by the electronic material. The semiconductor wafer u and the sealing material layer 7 of the material 80 are easily damaged by cracks, etc. Further, after the active energy ray irradiation, the temporary fixing agent is 18 (the melt viscosity of rc is preferably 1:100 Pa.s). 'But it is preferably about 01 to 10 Pa s. This can be more pronounced in the first month. Also, before the active energy ray irradiation, it is 18 〇. (The melt viscosity is not particularly limited, and is about 2 〇 0 to 10000 Pa. Preferably, about 1 〇〇 1 〇〇〇 Pa s is better, whereby the fixing resin layer 6 〇 is heated to, for example, i8 〇 °c even when the electric component is formed. 'The fixing resin layer 60 can still have the foot required to fix the semiconductor wafer η to the support 50 As a result, when the sealing material cured material & g is disposed in the electronic component, it is possible to surely prevent the semiconductor wafer defect from being displaced from the support substrate 5, and the fixing resin layer 60 is fixed before the active energy ray irradiation. 180 Its melt viscosity is set to A [Pa.s], and after the active energy ray irradiation, the fixing resin layer 6 is at 18 〇 and its melt viscosity is set to B [Pa.s], A/B satisfies 1 〇〇 〜 The relationship of 1〇000 is better, _. It is better to satisfy the relationship of 200 to 1000. By making A/B satisfy the relationship, when the electronic component 25 201233560 is provided with the sealing material cured material 80, the fixing resin layer 6 can be fixed. The semiconductor wafer 11 is surely fixed to the support substrate 50, and when the electronic component arrangement sealant cured material 80 is detached from the support substrate 50, the electronic component arrangement sealant cured material 8 can be easily detached from the support substrate 50. The melt viscosity of the fixing resin layer 60 can be measured by a rheometer method. Specifically, a solution of a temporary fixing agent is applied onto a ruthenium substrate, and dried on a hot plate at 120 Torr for 300 seconds to be used as an active energy ray. Light from super high mercury lamps After the irradiation of 2 〇〇〇mJ/cm2 in 365 nm, the film of the thickness 5 〇μτη composed of the temporary fixing agent was peeled off from the Shih-ray substrate and was measured by a rheometer field aake RS^ type, manufactured by Thermo Fischer Scientific Co., Ltd. Melt viscosity (interval: 3〇μιη, heating rate: 1〇0C/min, measurement temperature range: 3〇~3〇 (rc, frequency ^ 1Hz)' is determined by measuring the melt viscosity at 180°C. ^, the active energy ray irradiation for the fixing resin layer 60 is not particularly limited. It is preferable to irradiate light having a wavelength of 365 nm at 2000 mj/cm 2 . By setting this condition, an active substance such as an acid or a base derived from an active agent can be produced in a sufficient amount, and the effect of the active material can be surely used to reduce the melt viscosity of the resin component. Therefore, it can be used as a condition for irradiating the active energy ray of the fixed resin layer 6〇. #g] Next, the semiconductor wafer is placed on the fixed resin layer 60, and the half-chip i is fixed on the support wire % via the fixing resin layer 60 (see 2 (c), electronic component fixing step). When the semiconductor wafer 11 is placed, the surface of the terminal (not shown) faces downward (the surface in contact with the solid resin layer 6G). Further, when the semiconductor wafer 1]L is disposed, in order to form a satin layer with good precision in the later-formed age, the poor / ^1 · · - ' can be applied by using a flip chip holder. The semiconductor wafer u is precisely configured. The semiconductor wafer 11 is not particularly limited as long as it is fixed to the fixing resin layer 6A. When it is in a liquid state, it can be pressurized only (only the semiconductor wafer 11 is included). When the resin layer 6G is fixed, it can be borrowed as needed. The heating temperature is preferably limited, preferably 80 to 180 C. Further, the pressurization is 0.05 to 1 MPa, more preferably 26 201233560, preferably 0.1 to 0.8 MPa. Further, heating and The pressing time is preferably 1 to 3 sec., preferably 1 to 15 sec. The heating and pressing conditions are such that the semiconductor crystal U is fixed and the damage of the material wafer u is prevented or the achievable [4] Next, 'the gap between the adjacent semiconductor wafers and the J) sheet is covered with a sealing material. The method of η 'forms the sealing material layer 70 (refer to FIG. 2( d ); the sealing material layer shape + the stepping material wafer 11 , and the reliability of the electronic device 30 when the body wafer 11 including the completely coated body wafer 11 is included The method of forming the sealing material layer 70 by the sealing material is not particularly limited. For example, the general shape method, the injection molding method, etc., preferably a half-U piece of the film.

ml C尤佳。又，成形壓力不特別限定，A •〜MPa較佳，1〜i〇Mpa尤佳。再 二 鐘較佳，1〜10分鐘尤佳。藉由使‘成=間為士30秒〜15分 圍，能防止密封材發生未充埴部八i力、衿間為上述範 離兩者的情形。 、。刀L及半導體晶片11發生位置偏 成密密封材、固體狀密封材。構 無機充騎為辑·^者^。脂、硬化劑、 能以優異的密合性將半導體曰；:^冓成材枓構成之密封材， 數。 料體曰曰片11讀，同時較易調整熱膨脹係 細説明，但液狀密封材不限於該等。 為以環氧樹脂、酸^大密封材，無特別限制，但較佳 又，前述硬化促進mt、及硬化促進劑當成必要成分。 構成液狀密封促進劑又更佳。 個以上環氧叙於常溫為特分子中具2 構成前述液狀密封村之環了 ^或構化不特別限定。 脂、甲酚酚醛樹脂型環氧樹::二歹^如··酚酚醛樹脂型環氧樹 孔树知·#酚騃樹脂型環氧樹脂、雙酚卩型 27 201233560 環氧樹脂、N，N-二環氡丙基苯胺、取_ 基二苯基甲烧型環氧丙胺、胺基_ = 丙胺型環氧樹脂、氫醌型環氧樹脂 =方香= 型環氧樹脂、三峨型環氧樹脂、三紛丙=樹;:本= 改性三盼曱烧型環氧樹脂、三哄核含有環 ^^基 烯基環二氧化己烯、二環氧化戊二稀、脂、乙 ，侧败。 氧丙嗔時為環鍵結有環 =之，較佳。脂肪物環：:械：： 黏者性之硯點，限定使用量較佳 生尤其疋 =於篇;，為：:2 樹脂且結果成為錄狀態即可。日讀於巾溫驗狀之環氧 酸野、或^奈地酸—酐等崎之混合物、四氯鄰苯二賴酐、奈地 提高硬Ϊ快由，之硬化物之玻璃轉移溫度 四氫鄰苯二尹_作為硬液狀且黏度也低之觀點，使用 也可使用2 劑更佳。尤其，該等可以單獨使用， 量份，為2重量‘〜°1〇里重於所有液狀密封樹脂組成物100重 酸酐之摻合更佳為5重量份〜7重量份。 而超過上述上雜時，性變差，且生產性降低。 28 201233560 液狀密封材也可含有酸酐以外之硬化劑，酸酐以外之硬化劑 只要是1分子内具有與環氧反應之官能基之單體、寡聚物、聚& 物，巧可併用。例如:酚酚醛樹脂樹脂、甲酚酚醛樹脂樹脂、二^ 戊二烯改性酚樹脂、萜婦改性酚樹脂、三酚甲烷型樹脂、酚芳烷 基樹脂(具伸苯基骨架、聯伸苯基骨架等)等紛類，可使用其 ς 或組合2種以上使用。 〃 ，成液狀密封材之無機充填材，可使用一般使用為密封材 #該專了以早獨使用，也可併用2種以上。並中 月曰旨組耐ii、耐濕性、強度等之觀點，炫融二氧化ϊ回結 曰曰一氧化矽、合成二氧化矽粉末為較佳。 之觀狀不特別限定’從黏度特性或流動特性 無機充填材為溶融二氧化石夕時，盆八旦…上，k 川里里/。以下較佳，又更佳為40重 低於前述下限値時，伴隨吸水率 上、85重里/〇以下。 且若超過祕上_，練健雜會降低， 發生問題。 傾用樹月曰組成物之分配性能可能會 促進自_鹽型硬化 構造的鱗鹽型硬化促糊，但靴赋(4)或(5)表示之Ml C is especially good. Further, the molding pressure is not particularly limited, and A • MPa is preferable, and 1 to i 〇 Mpa is particularly preferable. It is better to have two more minutes, especially 1 to 10 minutes. By making the interval between 30 seconds and 15 degrees, it is possible to prevent the sealing material from being unfilled and the above-mentioned range. ,. The blade L and the semiconductor wafer 11 are positioned to be densely sealed and a solid sealing material. Inorganic charge for the series ^ ^ ^. A grease, a hardener, a semiconductor material that can be used for excellent adhesion, and a sealing material composed of a material. The material bracts 11 are read, and the thermal expansion is more easily adjusted, but the liquid sealing material is not limited to these. The epoxy resin or the acid sealing material is not particularly limited, but preferably, the hardening promoting mt and the hardening accelerator are regarded as essential components. It is more preferable to constitute a liquid seal accelerator. More than one epoxy is exemplified in the case where the normal temperature is 2 in the special molecule, and the composition is not particularly limited. Lipid, cresol novolac type epoxy tree:: 歹^^············· Bicyclopropyl propyl aniline, _ bis phenyl phenyl epoxide, amine _ = propylamine type epoxy resin, hydroquinone type epoxy resin = square fragrant = type epoxy resin, triterpene type epoxy Resin, three propylene = tree;: this = modified Sanpan simmering type epoxy resin, triterpene nucleus containing cycloalkylene ring hexylene oxide, dicyclohexaoxide pentoxide, lipid, B, side defeat. In the case of oxypropyl hydrazine, a ring is bonded to the ring = preferably. Fatty ring::Mechanical:: Adhesive point, limited use is better, especially 疋 = in the article;, is: 2 resin and the result becomes recorded. Read on the temperature of the towel, such as the acid acid field, or the mixture of Nasal acid-anhydride, tetrachlorophthalic anhydride, Nadi to improve the hard enthalpy, the glass transition temperature of the hardened material, tetrahydrogen The phthalic acid _ as a hard liquid and the viscosity is also low, and it is also preferable to use two agents. In particular, these may be used singly, in an amount of from 2 parts by weight to about 1 part by weight, more preferably from 5 parts by weight to 7 parts by weight, based on 100 parts by weight of all liquid sealing resin compositions. When the above impurities are exceeded, the properties are deteriorated and the productivity is lowered. 28 201233560 The liquid sealing material may contain a curing agent other than an acid anhydride, and a curing agent other than an acid anhydride may be used in combination as long as it is a monomer, an oligomer, or a poly-inger having a functional group reactive with an epoxy in one molecule. For example: phenol phenolic resin, cresol novolac resin, pentadiene modified phenol resin, widow modified phenol resin, trisphenol methane resin, phenol aralkyl resin (with phenyl skeleton, extension For example, a phenyl skeleton or the like may be used, or two or more of them may be used in combination. 〃 The inorganic filler which is a liquid-like sealing material can be used as a sealing material. It is used exclusively in the early days, and it is also possible to use two or more types together. In view of the fact that it is resistant to ii, moisture resistance, strength, etc., it is preferred to sinter the cerium oxide and to synthesize cerium oxide and synthesize cerium oxide powder. The view is not particularly limited to 'from viscosity characteristics or flow characteristics. When the inorganic filler is dissolved in the oxidized sulphur dioxide, the pot is eight denier... on the k chuanli. Preferably, it is more preferably 40 weight lower than the lower limit ,, and the water absorption rate is 85 liters/min or less. And if it exceeds the secret _, the practice will be reduced, and problems will occur. The distribution properties of the composition of the tree sap can be promoted by the scaly salt type hardening of the salt-hardening structure, but the boots are represented by (4) or (5)

R7 R8-B—Ri〇 R9 (4) 環之1價之有機基或 (惟’ R7、R8、R9、R1G為芳香族或具雜 29 201233560 1價之脂肪族基’此等至少其中之一為至少具有丨個能對於分子外 釋放之質子的質子供給體將1個質子釋出而成之基，且此等彼此 可為相同或不同）。R7 R8-B—Ri〇R9 (4) One-valent organic group of the ring or (only 'R7, R8, R9, R1G is aromatic or heterozygous 29 201233560 1 aliphatic aliphatic group'” It is a group in which at least one proton donor capable of releasing protons released from the outside of the molecule is released, and these may be the same or different from each other.

Arf〇H)n ΌΗ in-i ⑸ (惟’Ar代表取代或無取代之芳香族基，且同一分子内之⑽ 氧原子位於芳香族碳位之相鄰位置。n代表2〜12之整數）。 捂古有通式(4)或(5)表示之構造的鱗鹽硬化促進劑，能 高子零件之_合性、及提Arf〇H)n ΌΗ in-i (5) (only 'Ar represents a substituted or unsubstituted aromatic group, and the (10) oxygen atom in the same molecule is located adjacent to the aromatic carbon position. n represents an integer from 2 to 12) . A scale salt hardening accelerator having a structure represented by the general formula (4) or (5), capable of high-part parts, and

B- ⑹ 又B- (6) again

B--B--

P BP B

’具有以通式(5)表示之構造的硬化促進劑， ⑺ ⑻ 例如以下式(9) 3〇 201233560'The hardening accelerator having the structure represented by the general formula (5), (7) (8) For example, the following formula (9) 3〇 201233560

以式合性之均衡性優異之 性低，超㈣蝴，魏慢，生產 保存性會,E化’且超過上述上限_，ΐ化述 就上述以外可以使用之成分而言，可以適當添加作為消泡劑 201233560 之石夕酮化合物或鮮脫_、侧橡轉低應力劑。 樹脂、酸i述之Iff法不特別限定，可藉由將環氧 機、】二熱i S機iit進劑等使用行星混合 脱泡處理而製造。、裝置刀政此練之後，於真空下進行 限於下針對111體狀㈣材詳細説明，但固體狀密封材不 a狀的!她，例如:聯苯型環氧樹脂、雙紛 型環^樹^氧樹脂、二笨乙烯型環氧樹脂、氫酿 醛樹性：氧树脂；甲酚酚醛樹脂型環氧樹脂、酚酚 冉i.曰樹純祕樹脂型環氧樹脂等樹脂型環氧 型ίίί+ϊ之，烧基型魏概、含聯伸苯基骨架之 ί ^ ”官能型環氧樹脂；二環戊二烯改性_環氧相L、 ^1性_魏樹龄改，腾型魏躺；含三咖之環氧樹 月曰專感環之環氧樹脂等’可使用其中丨種或將2種以上組 用0 該f之中’環氧樹脂尤佳為使用以下列⑽表示者。 旨i2官能’故使用其之環氧樹脂組成物之硬化物 女度相壓低，鱗脹係數低、域於烊料回流步驟時， ’、P電子裝置3〇加熱時之應力緩和，所以該步驟時的趣曲可以減 ^。又，以下列(12)表示之環氧樹脂，為結晶性且低分子量之樹脂， 故熔融黏度低，含有其之環氧樹脂組成物的流動性優異。 H2Cr；^CHr〇-CH2--£^- X -^^K-CH2^-CHrCf^CH (1 2} ° (RIdV7 ^RIDa 〇 [式(12)中’ X為單鍵、或選自於_〇_、各、R12CR12之中的 基團。R11為碳數1〜6之烷基，彼此可以相同或不同。又，a為 〇〜4之整數。幻2為氫或碳數1〜4之烷基，彼此可相同或不同。] 32 201233560 ίίΐΐίί^ 'if，，555^ f ^4之总㉔此5物。該等化合物，作業性、實用性之均衡昱， 而且能將密封材層70之熱膨脹係數設定為低。 、/、 又，構成固體狀密封材之硬化劑，例如:乙二胺、三二 間茉甲^^胺、r亞甲^二胺等碳數2〜20之直鏈脂肪族二胺、 二，-:胺A: J二對4二4曱苯二胺、4,4'二胺基二苯基甲烷、 石爾Ζι基基 ^基二苯鍵、4,4’_二胺基二苯基 关、門：:亡基：壤己烧、雙(4_胺基苯基〕苯基甲烧、以：胺基 :氰對二甲苯二胺、U-雙(4_胺基苯基)環己烷、 4祕類；苯胺改性可溶祕齡或二甲_可溶紛 Ϊ親ΐ細旨麵概；__脂概、情酚醛樹 '壬細祕雛樹脂等_ 树月曰㈣樹月曰，讀苯基骨架之齡芳烧基樹月旨、含聯伸苯 芳絲細旨；具如萘骨钱架之縮合多 二對氧苯乙烯等聚氧苯乙烯；含六氫鄰苯二甲 ί =2ί四氫鄰苯二甲酸酐_Α)等脂環族酸酐、偏 、本均四酸酐(聰α)、二苯酮四羧酸(騰) 酸酐权酸酐等；聚辆、硫§旨、辆等聚硫醇化合物； ，政S旨躲物、封端倾嫌龄魏酸㈣合物；含缓酸之 旨等有機酸類，可使用其中]種或組合2種以上使用。 較佳=密封材層70之構成材料使用之硬化劑， ，佳為使用1刀子内至少具有2個雜絲之化合物。該硬化劑， ，如翁祕繼樹脂、情祕猶樹脂、第三丁絲祕樹脂 ^旨、壬基麟盤樹脂樹脂等祕樹脂型紛樹脂；可溶祕樹脂 =樹脂；聚職苯乙鱗聚氧苯乙烯；含伸苯毅架之紛芳烧 基树脂、含輯絲骨架讀練基_等。齡_該化合物， 能將密封材層70之_脹係數設定為低。該等化合物從耐雖、 可靠性等觀點也是優異的化合物。 ‘、、、 再者，1分子内至少具有2個酚性羥基之硬化劑，尤以使用下 33 201233560 列(13)表示之酴樹脂較佳。下列(13)表示之紛樹脂，係其基本 合併具有酚醛樹脂型紛樹脂與三酚甲烷型朌樹脂之構造者。^ 具有酚醛樹脂型玢樹脂作為基本骨架，於構造面，樹脂骨架^六 聯點間距離短且具有能發揮良好硬化性、成形性的效果。又，^ 由具有二紛甲燒型紛樹脂作為基本骨架，由於一分子中具有3^ 以亡的羥基，因此交聯密度高、且使用其之樹脂組成物之硬化物， 為高Tg且線膨脹係數小，且具有能獲得高強度者的效果。因此， 使用以下列(13)表示之酚樹脂之樹脂組成物，具良好硬化性以及優 異的成形性，又，成形•硬化後及熱處理後之熱膨張、熱收縮較 小，因此能使電子裝置30的翹曲量減小。The balance of the consistency of the formula is low, the super (four) butterfly, the Wei slow, the production preservation, the E-th and the above-mentioned upper limit _, and the ingredients that can be used in addition to the above can be appropriately added as Defoamer 201233560 of the compound or fresh off _, side rubber to low stress agent. The method of the resin and the acid IW is not particularly limited, and it can be produced by using a planetary mixing defoaming treatment such as an epoxy machine or a two-heat i S machine. After the machine is trained, it is limited to the following description of the 111-shaped (four) material under vacuum, but the solid sealing material is not a-shaped! She, for example, biphenyl type epoxy resin, double-shaped ring type ^ tree ^Oxygen resin, diphenoethylene type epoxy resin, hydrogen aldehyde aldehyde: oxygen resin; cresol novolac type epoxy resin, phenol phenolphthalein i. eucalyptus pure resin type epoxy resin and other resin type epoxy type Ίί, ϊ,, 烧, Wei, ί ^ ” functional epoxy resin with extended phenyl skeleton; dicyclopentadiene modification _ epoxy phase L, ^1 sex _ Wei Shuling, Teng Wei Lay; Epoxy resin containing three-coffee epoxy tree moon 曰 曰 曰 ' ' 可 可 可 可 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' Therefore, the hardness of the epoxy resin composition using the epoxy resin composition is low, the coefficient of swell is low, and the stress is moderated during the reflow step of the material, and the stress is moderated when the P electronic device is heated. The fun of the step can be reduced. In addition, the epoxy resin represented by the following (12) is a crystalline and low molecular weight resin, so it is melted. The viscosity is low, and the epoxy resin composition containing the same has excellent fluidity. H2Cr; ^CHr〇-CH2--£^- X -^^K-CH2^-CHrCf^CH (1 2} ° (RIdV7 ^RIDa 〇 [In the formula (12), 'X is a single bond, or a group selected from _〇_, each, and R12CR12. R11 is an alkyl group having 1 to 6 carbon atoms, which may be the same or different from each other. Further, a is An integer of 〇~4. The phantom 2 is hydrogen or an alkyl group having a carbon number of 1 to 4, which may be the same or different from each other.] 32 201233560 ίίΐΐίί^ 'if,, 555^ f ^4 total 24 of these 5 things. The workability and the practicality are balanced, and the thermal expansion coefficient of the sealing material layer 70 can be set to be low. Further, a hardener constituting the solid sealing material, for example, ethylenediamine or bismuth methane^ a linear aliphatic diamine having a carbon number of 2 to 20, such as an amine, r-methylene diamine, etc., a:-:amine A: J di-p-42 phenylenediamine, 4,4'-diaminodiphenyl Methane, sulphate, bis-diphenyl bond, 4,4'-diaminodiphenyl, gate:: dying: soil burned, bis(4-aminophenyl) phenyl ketone With: amine: cyanide xylene diamine, U-bis (4-aminophenyl) cyclohexane, 4 secrets; aniline change Sexually soluble secret age or dimethyl _ soluble Ϊ Ϊ Ϊ ΐ ; ; _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Aromatic base tree, containing phenylene wire for the purpose of stretching; polyoxystyrene such as condensed poly(p-dioxystyrene) such as naphthoquinone; containing hexahydrophthalic acid = 2ί tetrahydro phthalene An alicyclic acid anhydride such as acetic anhydride _ Α, a partial, a tetrabasic anhydride (Cong a), a benzophenone tetracarboxylic acid (Teng) anhydride anhydride, etc.; a polythiol compound such as a polysulfide or a sulfur; The chemical substance is intended to be used as an organic acid such as an acid-containing acid, and may be used in combination of two or more kinds. Preferably, the curing agent used for the constituent material of the sealing material layer 70 is preferably a compound having at least two kinds of filaments in one knife. The hardener, such as the secret of the resin, the secret of the resin, the third butyl silk resin, the purpose of the resin, the base resin resin and other secret resin type resin; soluble secret resin = resin; Polyoxystyrene; aryl-containing resin containing benzene yoke, containing silk skeleton reading base _ and so on. Age_ This compound can set the expansion coefficient of the sealing material layer 70 to be low. These compounds are also excellent in terms of resistance, reliability, and the like. ‘,,, Furthermore, a hardener having at least two phenolic hydroxyl groups in one molecule, particularly preferably a fluorene resin represented by the following paragraph 33 201233560 (13). The following (13) shows a resin which is basically composed of a phenol resin type resin and a trisphenol methane type resin. ^ A phenolic resin-based enamel resin is used as the basic skeleton, and the distance between the resin skeleton and the hexagonal joint is short on the structural surface, and it has an effect of exhibiting good hardenability and formability. Further, ^ is a basic skeleton having a bismuth-type smoldering type resin, and has a high molecular weight, and a cured product of a resin composition using the same, which has a high Tg and a line. The coefficient of expansion is small and has the effect of obtaining high strength. Therefore, the resin composition of the phenol resin represented by the following (13) has good hardenability and excellent formability, and heat expansion and heat shrinkage after forming, hardening, and heat treatment are small, so that the electronic device can be made. The amount of warpage of 30 is reduced.

/ [式(13)中’ R13、R14、R1S係從碳數1〜4之烧基選出之基， 彼此可相同也可不同。b為〇〜3之整數、c為0〜4之整數、d為0〜3 之整數。m、η代表莫耳比，且〇<m<i、0<n<卜m+n=l。] 又，上述通式(13)中，m與η之莫耳比(m/n)為1/5〜5/1較佳， 1/2〜2/1更佳。藉此，含有酚醛樹脂型酚樹脂及酚醛樹脂型酚樹脂 兩者的效果可相乘的發揮。 又’前述通式(13)表示之酚樹脂之具體例，例如:下式(14)所示 者0 34 (14) 201233560/ [In the formula (13), R13, R14 and R1S are selected from the group of the carbon atoms of 1 to 4, and may be the same or different. b is an integer of 〇~3, c is an integer of 0 to 4, and d is an integer of 0 to 3. m, η represents a molar ratio, and 〇 < m < i, 0 < n < m + n = l. Further, in the above formula (13), the molar ratio (m/n) of m to η is preferably 1/5 to 5/1, more preferably 1/2 to 2/1. Thereby, the effects of both the phenol resin type phenol resin and the phenol resin type phenol resin can be multiplied. Further, a specific example of the phenol resin represented by the above formula (13) is as shown in the following formula (14). 0 34 (14) 201233560

二准’綱中’ m、n表示莫耳比’且。鄉〇<η<ι、_ 又 岔封材層70所含之無機充填材 石夕、溶融球狀二氧化石夕、結晶二氧化石夕碎二氧化 化石夕；氧化紹；鈦白；氫氧化銘·取人广木—乳化石夕等二氧 等，可使用其中i種或組合使用2二上%轉= 融球狀二氧切。觀，能絲珊 ^^ 錯由混合粒子大小不同者而辦多盔掬二 X 再者可 於半_ s g n f而―a/無機充填1，但其粒徑若考慮對 =v體日日片U之_、之充填性，為叫m以上、15_以下 再者’構成密封材層70之前述樹脂組成 } ：Ιίίΐ：2 郴奴原子各鍵結有羥基而成的化合物、硬化促進劑。 融Jfi聯劑不特別限心例如:環氧魏、絲魏、脲石夕烧、 古Γ使用其令1種或組合使用2種以上。藉由在樹脂 問e =有如此之矽烷偶聯劑，會於環氧樹脂與無機充填劑之 ^產應’因此能提高環氧樹脂與無機充填劑之間的界面強度。 i ^氧石夕烧’例如:γ·環氧丙氧基丙基三乙氧基石夕烧、γ環氧丙氧 基丙基f甲氧基矽烷、γ-環氧丙氧基丙基甲基二甲氧基石夕烷及 β-(3,4%、氧環己基)乙基三曱氧基石夕烷等。胺基矽烷，例如:γ_胺基 =基二乙，基石夕烷、γ_胺基丙基三甲氧基矽烷、Ν_Ρ(胺基乙基片_ 胺基丙基二曱氧基矽烧、Ν-β(胺基乙基)γ-胺基丙基曱基二甲氧基 35 201233560 矽烷、N-苯基γ-胺基丙基三乙氧基矽烷、N_苯基γ_胺基丙基三曱 氧基矽烷、Ν-β(胺基乙基)γ_胺基丙基三乙氧基矽烷、Ν_6_(胺基己 基)3_胺基丙基三曱氧基石夕烧及N-〇(三曱氧棊石夕基丙基)_1，3_苯二 曱胺等。又，例如脲矽烷’例如脲丙基三乙氧基石夕烷、六曱基 二石夕氮烧等，巯基矽烧，例如:γ_毓基丙基三甲氧基矽烧。 又’石夕烧偶聯劑’具有由於與構成後述芳香環之2個以上的 相，的碳原子各鍵結有經基而成之化合物(以下有時將該化合物記 ，，「羥基鍵結化合物」）的相乘效果，而降低樹脂組成物之黏度、 提咼流動巧之效果。所以，當樹脂組成物中含有羥基鍵結化合物 時，為了藉由添加羥基鍵結化合物獲得之效果能充分發揮，較佳 為也含有=烷偶聯劑之構成。藉此，當多量摻合黏度較高之樹脂 時，或多量摻合無機充填劑時，也能發揮就構成密封材層70之樹 脂組成物而言的足夠流動性。 又，構成芳香環之2個以上相鄰之碳原子各鍵結有羥基而成 之化合物⑽基鍵結化合物不制限定，例如:下即Q表示之化 =勿、下列(16)表*之化合物等。X，經基鍵結化合物巾，也可且 有羥基以外之取代基。 〃In the second standard, m and n represent Moerby's. Hometown<η<ι,_ 岔 岔 封 封 封 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 Oxidation Ming · Take the people of Guangmu - Emulsified Shi Xi and other dioxins, etc., can use one of them or a combination of 2 2% conversion = melted spherical dioxo. View, can be silky ^^ wrong by mixing particles of different sizes and do more helmets 掬 two X can be in half _ sgnf and ―a / inorganic filling 1, but its particle size if considering the = v body day U In addition, the filling property is m or more, 15_ or less, and the above-mentioned resin composition constituting the sealing material layer 70: Ιίίΐ: 2 A compound in which a hydroxyl group is bonded to a hydroxyl group, and a curing accelerator. The JFi conjugate is not particularly limited. For example, Epoxy Wei, Siwei, Urea, and Quercus can be used in combination or in combination of two or more. By asking the resin to have such a decane coupling agent, the epoxy resin and the inorganic filler can be used to increase the interfacial strength between the epoxy resin and the inorganic filler. i ^Oxygen sparkling', for example: γ·glycidoxypropyltriethoxy sulphur, γ-glycidoxypropyl f-methoxydecane, γ-glycidoxypropylmethyl Dimethoxy oxalate and β-(3,4%, oxycyclohexyl)ethyltrimethoxy oxetane and the like. Amino decane, for example: γ-amino group = yldiethyl group, sulphate, γ-aminopropyltrimethoxy decane, Ν_Ρ (aminoethyl sheet - aminopropyl dimethoxy oxime, hydrazine -β(aminoethyl)γ-aminopropylmercaptodimethoxy 35 201233560 decane, N-phenylγ-aminopropyltriethoxydecane, N-phenylγ-aminopropyl Trimethoxy decane, Ν-β (aminoethyl) γ-aminopropyl triethoxy decane, Ν_6_(aminohexyl) 3 -aminopropyltrimethoxy oxalate and N-anthracene (曱 曱 夕 夕 ) ) ) ) ) ) ) ) ) 又 又 又 又 又 又 又 又 又 又 又 又 又 又 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽 矽For example, γ-mercaptopropyltrimethoxy oxime is sintered. The 'Shih-hsing coupling agent' has a carbon atom bonded to two or more phases constituting an aromatic ring to be described later. The compounding effect of the compound (hereinafter referred to as "hydroxyl-bonding compound") reduces the viscosity of the resin composition and enhances the flow of the resin. Therefore, when the resin composition contains a hydroxyl group-bonding compound In order to borrow The effect obtained by adding a hydroxy-bonding compound can be fully exerted, and it is preferable to also contain a composition of an alkane coupling agent, whereby when a large amount of a resin having a high viscosity is blended, or a large amount of an inorganic filler is blended, In order to exhibit sufficient fluidity for the resin composition constituting the sealing material layer 70, the compound (10)-bonding compound in which two or more adjacent carbon atoms constituting the aromatic ring are bonded with a hydroxyl group is not limited. For example, the compound represented by Q, the compound represented by the following (16), and the like, may be substituted with a substituent other than a hydroxyl group.

R20任—者為羥基’其中之一為羥基時，另 色基以外之取代基選出之基。R17、R18、R19 、外之取代基選出之基，彼此可相同或不同。] 36 201233560 R21 R22When R20 is a hydroxyl group, one of them is a hydroxyl group, and a substituent other than the other substituent is selected. The substituents selected for R17, R18, R19 and the substituents may be the same or different from each other. ] 36 201233560 R21 R22

[式(16)中’ R21、R27任一者為經基，其中之一為經基時，另 一者為氫、羥基或從羥基以外之取代基選出之基。把2、把3、幻4、 R25、R26為氫、羥基或從羥基以外之取代基選出之基，彼此可相 同也可不同。] 又’以通式(15)表示之化合物之具體例，例如:下式(17)表示之 兒茶紛、五倍子酚、没食子酸、没食子酸酯及該等之衍生物。又， ^式(16)表示之化合物之具體例，例如:1，2_二羥基萘、下式(18)表 示之2,3-一經基萘及該等之衍生物。該等之化合物可單獨使用^ 種，也可組合使用2種以上。其中，從控制流動性與硬化性之容 易f、低揮發性之觀點，選用主骨架為萘環之化合物(亦即，1，2_ 二羥基萘、2,3-二羥基萘及其衍生物)更佳。 ，[In the formula (16), either R21 or R27 is a radical, and one of them is a radical, and the other is hydrogen, a hydroxyl group or a group selected from a substituent other than a hydroxyl group. The groups selected from 2, 3, 3, R25, and R26 are hydrogen, a hydroxyl group, or a substituent other than a hydroxyl group, and may be the same or different. Further, specific examples of the compound represented by the formula (15) include, for example, catechin, gallic acid, gallic acid, gallic acid ester and derivatives thereof represented by the following formula (17). Further, specific examples of the compound represented by the formula (16) are, for example, 1,2-dihydroxynaphthalene, 2,3-monopyridyl represented by the following formula (18), and derivatives thereof. These compounds may be used singly or in combination of two or more. Among them, from the viewpoint of controlling fluidity and hardenability, and low volatility, a compound having a main skeleton of a naphthalene ring (that is, 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof) is selected. Better. ,

再者，硬化促進劑不特別限宗， 硬化促進劑不特別限宗Furthermore, the hardening accelerator is not particularly limited, and the hardening accelerator is not particularly limited.

例如:1，8-二氮雜雙環(5,4,〇) 〖；三丁胺、苄基二甲胺等胺 豕咪唑化合物；三苯基膦、曱基二苯基膦等 四苯基硼酸根、四苯基鱗•四苯甲酸硼酸 酸性硼酸鹽、四苯基鱗•四萘甲醯氧基硼 37 201233560 酸鹽、四苯基鱗·四萘氧棚酸鹽等四取代鳞·四取代硼酸趟 成雜之^苯基膦等，可使用其中i種或組合使用2種以^。 組成物，除了上述構成材料以外，視 高級脂，嫩屬ί:色二巴二劑二： 出成Ϊ52ΪΪΪ!樹脂組成物利用轉移成形、壓縮成形、射 出成$縣㈣法使_、硬化，製絲珊。成形方法 限定「’iHt零ΐ之位置偏離、剝離之觀點，壓縮成形較佳。 辦Λ :由將被封材層70加熱並使硬化，獲得配置有半導 硬3驟）。電子零件配妓珊硬錄8G(參職2(d);密封材 50 I•在此-1電子零件配置密封材硬化物8〇係指，設置於支持灵板 隔予以Ρ：·==。70之硬化物將多數半導體晶片11隔著間 固定硬化讀件不翻蚊，㈣喊溫度係設定於 硬化物80之形成能於半導體晶片„不褚生1子令 具體而言，前述加孰溫度為卿〜·。「=立=離的狀悲進仃。 :=不特別限定，广又」 上述顧，能夠防止固定樹 ^』獲伃尚可靠性之電子裝置3〇。 化物i時依%步驟[5]形成電子零件配置密封材硬 6〇，故可發ί形定樹脂層 效果。 ％”優異精度的電子零件配置密封材硬化物8〇的 化物80之步驟[5]形成電子零件配置密封材硬 中α疋树煸層6〇受熱並經過溫度履歷，但此時 38 201233560 =於固定樹脂層60不施行活性能量射線照射，固定樹脂層6〇維 持南溶融減。因此，能於密封材層7G及電子零件配置密封材硬 化物80與支持基板％之間不生剝離或半導體晶片（（在支持基板 5〇^不生位置偏離等的狀態形成電子零件配置密封材硬化物80， 故此以優異的尺寸精度形成電子零件配置賴材硬化物8〇。 又，如上所述，本實施形態中，活性能量射線照射前於18〇。〇 ，炫融黏度為較佳為⑽卜励心。如此，#於漏。c之溶融黏度 為前述範圍内時，能更顯著發揮前述效果。 士 [6]其次，對於固定樹脂層60照射活性能量射線後藉由將固定 ^月旨層60加熱並使熔融，將電子零件配置密封材硬化物8〇從支 持基板50剝離(剝離步驟）。 以下針對該步驟[6]詳述。 [6 1]首先’如圖2(e)所示，隔著支持基板5〇對於固定樹脂層 60照射活性能量射線。 、、藉此，對於固定樹脂層60之構成材料即樹脂組成物中所含之 f性劑賦予能量，其結果，會從活性魅生如酸級之活性物質。 猎由該活性物冑之作帛，加熱時之翻旨成分之熔融黏度會降低。 又，活性能量射線不特別限定，例如:波長約2〇〇〜5〇〇nm之光 線較佳、波長約350〜400nm之光線更佳。 再者’活性能量射線之照射量不特別限定，為約丨〜如⑻^2 較佳’約10〜1000mj/cm2更佳。 照射活性能量射線之條件藉由設定如上，能使活性劑產生為 了使活性能量射線照射後於18(TC之錄黏度成為_〜i〇〇pas、、' 之足量的活性物質。 · [6-2]其次，如圖2⑺所示，藉由加熱固定樹脂層6〇，使固 ，月=60成為炫融狀態，之後將電子零件配置密封材硬化物8〇 «支持基板50剝離(參照圖2(g))。 ，此，本發明之第i實施形態中，由於在固定樹脂層6〇之加 J巧對於固定概層6。照射活性能量射線，因此，藉由加執固 疋树脂層60，獅成分之縣減比起未活性能量射線時為g 39 201233560 低二杈佳為對於固定樹脂層60照射活性能量射線後， 於180°C之 溶1¾¾黏度成為〇·〇1〜IQQPa g。 =以’用於使固定樹脂層60成為熔融狀態之加熱溫度可以設 j較低。具體而言’當活性能量射_祕於⑽。C之溶融黏度 成為0.01〜i^〇pa.s時，可將前述加熱溫度設定為約13〇〜2〇(rc。所 ^ ’可以確實抑鐵社由於該加熱所辭導體⑼u及密封材 層70&之變質、劣化，騎，可驗肋使岐細旨層6Q成為溶 融狀恝所需花費的時間。 、又/加熱時間不特別限定，為30秒〜60分鐘較佳、卜％分鐘 尤佳。藉由使加熱咖壯述範圍，能使固定雛層6㈣實溶融， 並且有效防止半導體晶片11及密封材層70熱劣化。、 又，將電子零件配置密封材硬化物8G從支持基材娜之方法 =寺別限定，例如:以對於支持基板5G之表面成垂直地剝離之方 ’、使對於支絲板50之表面沿水平方向滑動而剝離之方法、使 ，子零件配珊魏物80從域紐5G浮起而_之方法 [6-3]其-人，於電子零件配置密封材硬化物8〇剝離 $配置密封材硬化物80之表面附著有固定樹脂層6 殘存之固定樹脂層60。 t 亦即，將電子零件配置密封材硬化物8〇之密封有 11之侧之面所殘留的固定樹脂層6〇之殘留物( 曰曰 又，即使於電子零件配置密封材硬化物8匕表)=著著 ^旨層60時，由於本發明之第丨實施形態中，固定樹脂斧的口 為如上述構成，故能以電漿處理、藥液處理、研磨處理胃每、 便地去除魅。其絲，缺獲狀電抒置之 4手^間 前述殘渣之除去方法，尤佳為氧電聚處理、對於 小之ΙΡΑ、丙酮、γ-丁内酯、PEGMEA等藥液處理。 、何 又’本實施形態係針對密封材硬化步驟後進行 之實施形態加以説明’但是剝離步驟後也可實施密封材硬化^驟。 藉由經過如以上之步驟，可獲得從支持基板5〇剝離之電/子零 201233560 件配置密封材硬化物80。亦即， 明之電子健之製造方法& =靖1H6]，構成本發 線芦對ί丨ΐί零件配置密封材硬化物8。形成配線層之配 、、裏日^成步驟，利用圖3、4加以説明。 片ιι[ϋ’】^=電子零件配置密封材硬化物8°以半導體晶 ^ 3(a»'有 面與固定樹脂層6〇接觸之面)41帛上配置(參照 41 子零件配置韻材硬化物⑽之具有端子之面 41开/成第1纟巴緣層9〇(參照圖3(b))。 似如月1絕緣層9G不特別限定，但以有機樹脂組成物較佳、 丁二π 1胺，脂、聚苯并嗜销脂等聚醢胺樹脂、聚笨并環 蓉夕由曰二,降㈣樹脂等作為主成分之感紐樹脂組成物。該 ίίία，/轉光、顯影時之感度、解像度、及玻璃轉移溫度、彈 性優ί的於軒料配置密封材硬化物8G之密合 分匕物=并㈣峨醢一 於電子零件配置密封材硬化物80之具有端子之面 ΐί脂之方法，不特別蚊，可藉由使職轉11之旋= f f、使用噴塗機之喷霧塗佈法、浸潰法、印刷法、紐法等逸 行k佈，並且將前述樹脂組成物所含之溶劑預烘烤使揮笋而 前述樹脂組成物，可視形成方法以適當溶劑^稀釋而 鈿述塗佈1不特別限定，但較佳為塗佈使最終膜厚為 0.1〜30μιη。膜厚若低於下限値，難以充分發揮電子零配 材硬化物⑽作為麟獻航，又，純過上崎 ^推 得微細的加工圖案’而且加工費時，產出量降低。又， 不特別限定，但以50〜15(TC較佳，60~130。(：更佳。 、/、/皿又 [9]其次’於第1絕緣層9〇之對應於半導體晶片u 圖示)的位置，藉由曝光及顯影形成開口部91(參照圖3(c))。（未 在此’說明藉由將正型感光性樹脂組成物進行曝光及顯p 41 201233560 而形成開口部91之機制。 上之塗膜，以步進^^等暖=要子零件配置密封材硬化物80 光），藉此級轉^罩之·化學線(曝 (以下稱絲曝光部) 匈及未經曝光之部分 影液，且由於聚酿^胺中存在之重氣酿化合物不溶於顯 I酉昆化合物交互作用销脂等脂與重 存在之重氮酉昆化合物由於化風°另了方面，曝光部 於顯影液，並促進樹脂之4'。 成為可溶 性差異，將曝光部溶解除去，获^^先。卩與未曝光部之溶解 前述曝光才δ方法不〜t未曝光部製作開口部91。 位置，將具如之遮罩f 7 猎由在對應於開口部91之 2= 1光線等化束、 200〜500mn較佳，具體而言 =予線之波長為 其次，藉由將曝光部简 前述顯影液不特別限定，例如;二，合解除去，可獲得開口部9卜 的負荷少的鹼水溶、鹼水溶液，較佳為對於環境 氧化納、躲爾使用氣 驗類 '乙胺、正丙坡等！級胺類夕、基，納、A水等無機 三乙胺、P基二乙胺算3级晚;_恥一正丙胺等2級胺類、 胺類、四甲基氫氧化錄、四^ 7甲基乙醇胺、三乙醇胺等醇 溶液及在其中適量添加如甲醇等鹼類的水 界面活性劑而得之水溶液。·"、等水/合性有機溶劑或 式。又顯办方濟可使用喷塗、浸置_收）、浸潰、超音波等方 91之[壁^導:2端緣層9〇、開口部 方法·定: 但可藉由濺鍍法等由Cr、 [UJ其次，於形成導電體93 層應(參照圖3(e))。瑕3之心开乂成具有開口部之抗韻劑 42 201233560 形成抗蝕劑層100之抗蝕劑 感光性抗姓劑。 义疋’例如液狀或膜狀之 為液狀之感光性抗蝕劑時，佑昭π 感光性抗_吏得被覆導電層92的整同版法形成液狀之 之部分隔著具有開口的遮罩進行曝的光整形成導電體93 顯影，形成抗侧層100。為膜狀之光性猎卞，顯影液進行 2成膜狀之感光性抗蝕劑’使得‘覆導電層二敕=層合f方 狀=_的情形簡樣方式形成抗_層_。之後與 照圖3(i、。次，於抗_層娜之開口部以鑛敷形成導電體93(參 號高93 _ _限定’ _電阻小且能因應信 [13]其次，將抗蝕劑層1〇〇 .除去，並且去除 之部分以外之導電層92(參照圖4⑻）。 “ 7成導電體93 去除抗姓劑層100及導電層92之方法， ，成導電體93之部分不易殘留導電層92的l ^離子侧(賺)等方法除去。#以反應性離子^ 應 ，，,導電體93也會有些許賊變薄的情形，但是^體广 又形成為比起導電| 92充分厚，因此導電體93不會全部子 ,)[Μ]其次，形成第2絕緣層110使得被覆導電體V參i圖。 構成第2絕緣層11〇之材料及第2絕緣層11〇之 特別限定，可使用與第i絕緣層9〇的情形為同樣者,、 [15]其次’在第2絕緣層11〇 #中形成凸塊μ 口部111(參照圖4(c))。 町丨刀軸開 作田ϋϊ ί絕緣層11G形成開口部111的方法不特舰定，也可 使用於弟1絕緣層90形成開口部91時為同樣的方法。 圖4([d^次’於第2、絕緣層n〇之開口部1U形成凸塊18(參照 凸塊18的材質不特別限定，較佳為從由錫(Sn)、鉛⑦的 '銀 43 201233560 =?:)、銦(In)、辞(Zn)、鎳㈣、銻(Sb)、鐵㈣For example: 1,8-diazabicyclo (5,4,〇) 〖; amine imidazole compound such as tributylamine, benzyl dimethylamine; tetraphenylboric acid such as triphenylphosphine or decyl diphenylphosphine Root, tetraphenyl sulphate, tetrabenzoic acid boric acid, acid borate, tetraphenyl sulphate, tetranaphthyl methoxy borax 37, 201233560 acid salt, tetraphenyl sulphate, tetranaphthyloxy succinate, etc. As the phenylphosphonium bromide or the like, it is possible to use one of them or two of them in combination. In addition to the above-mentioned constituent materials, the composition is a high-grade fat, a tender ί: a color two-bar two-agent two: a Ϊ52ΪΪΪ! The resin composition is formed by transfer molding, compression molding, and injection into a county (four) method. Silky. The molding method defines "the viewpoint of the positional deviation and peeling of the 'iHt", and the compression molding is preferable. The enamel is heated by the sealing material layer 70 and hardened, and a semi-conductive hard 3 step is obtained. Shan hard record 8G (job 2 (d); sealing material 50 I• In this -1 electronic parts configuration sealing material hardened 8 〇 finger, set in the support of the slab partition to be Ρ: · = = 70 hardened The majority of the semiconductor wafers 11 are fixed between the hardened readings and the non-mosquitoes. (4) The temperature is set to the formation of the cured material 80. The semiconductor wafers are not produced. Specifically, the aforementioned twisting temperature is qing~. "===================================================================================================== The electronic component is arranged to have a hard seal of 6 〇, so that the effect of the resin layer can be determined. %" The precision of the electronic component is arranged. The step of the cured material of the sealing material 8 [ 80 [5] forms the electronic component configuration sealing material hard The alpha eucalyptus layer is heated and passed through the temperature history, but at this time 38 201233560 = fixed resin The layer 60 is not subjected to active energy ray irradiation, and the fixing resin layer 6 〇 maintains the south melting reduction. Therefore, no peeling or semiconductor wafer can be formed between the sealing material layer 7G and the electronic component arrangement sealing material cured material 80 and the supporting substrate % (( The electronic component arrangement sealing material cured product 80 is formed in a state in which the support substrate 5 is not displaced, and the electronic component arrangement cured material 8 is formed with excellent dimensional accuracy. As described above, in the present embodiment, Before the active energy ray irradiation, it is 18 〇. 炫, the viscous viscosity is preferably (10) 卜力心. Thus, when the melting viscosity of # 漏 漏 c is within the above range, the above effect can be more significantly exerted. [6] Secondly After the active resin layer 60 is irradiated with the active energy ray, the fixing layer 60 is heated and melted, and the electronic component arrangement sealing material cured material 8 is peeled off from the support substrate 50 (peeling step). 6] In detail, as shown in FIG. 2(e), the active resin layer 60 is irradiated with the active energy ray via the support substrate 5, and thereby, the composition of the fixed resin layer 60 is formed. The f-type agent contained in the resin composition imparts energy, and as a result, it is active from an active substance such as an acid-grade active substance. The entanglement of the active substance is entangled, and the melt viscosity of the component when heated is Further, the active energy ray is not particularly limited, and for example, a light having a wavelength of about 2 〇〇 to 5 〇〇 nm is preferable, and a light having a wavelength of about 350 to 400 nm is more preferable. Further, the irradiation amount of the active energy ray is not particularly limited. Preferably, it is preferably about 10 to 1000 mj/cm 2 . The conditions for irradiating the active energy ray are set as above, and the active agent can be produced for the purpose of causing the active energy ray to be irradiated at 18 (TC recording). The viscosity is _~i〇〇pas, and the amount of active material is sufficient. [6-2] Next, as shown in Fig. 2 (7), the resin layer 6 is fixed by heating, and the solid state is replaced by a month of 60. Then, the electronic component is placed in a sealed material cured material. (Refer to Figure 2(g)). Here, in the i-th embodiment of the present invention, the fixing layer 6 is fixed to the fixed layer 6 by the fixing of the fixing resin layer 6. The active energy ray is irradiated. Therefore, by adding the solid resin layer 60, the county of the lion component is reduced to g 39 201233560, and the active resin layer 60 is irradiated with the active energy ray. The solubility at 180 ° C is 〇·〇1~IQQPa g. The heating temperature at which the fixing resin layer 60 is brought into a molten state can be set to be lower. Specifically, 'when the active energy is shot, it is secretive (10). When the melt viscosity of C is 0.01 to i^〇pa.s, the heating temperature can be set to about 13 〇 to 2 〇 (rc. ^^ can be confirmed by the heating of the conductor (9) u and the sealing layer 70& deterioration, deterioration, riding, ribs can be used to make the 岐 旨 layer 6Q become the time required for the molten 恝. The heating time is not particularly limited, it is preferably 30 seconds to 60 minutes, especially By fixing the range, the fixed layer 6 (4) can be melted, and the semiconductor wafer 11 and the sealing material layer 70 can be effectively prevented from being thermally deteriorated. Further, the electronic component is placed in the sealing material cured material 8G from the supporting substrate. The method of Na is not limited to the temple, for example, a method of peeling off the surface of the support substrate 5G perpendicularly, and sliding the surface of the support plate 50 in the horizontal direction, so that the sub-parts are equipped with 80 method of floating from the field gang 5G _ [6-3] - person, in the electronic component arrangement sealing material cured material 8 〇 stripping $ arranging the surface of the sealing material cured material 80 with a fixing resin layer 6 remaining fixing resin Layer 60. t, that is, hardening the electronic component sealing material The residue of the fixing resin layer 6 残留 remaining on the side of the sealing surface of the material 8 ( ( , , , = = = = = = = = = = = = = = = = = According to the third embodiment of the present invention, since the mouth of the fixed resin axe is configured as described above, the stomach can be removed by plasma treatment, chemical liquid treatment, and polishing treatment, and the charm is removed. The method for removing the residue between the four hands is particularly preferably an oxygen polymerization treatment, and is applied to a chemical solution such as sputum, acetone, γ-butyrolactone, or PEGMEA. The present embodiment is directed to the sealing step of the sealing material. The embodiment to be described later will be described. 'But the sealing material can be cured after the stripping step. By passing through the above steps, the electric/sub-zero can be obtained from the support substrate 5〇201233560 pieces of the sealing material cured material 80 That is, Mingzhi Electronic Health Manufacturing Method & = Jing 1H6], constitutes the hairline re- 丨ΐ 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 零件 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成4, explain. Slice ιι[ϋ']^=Electronics The part arrangement sealing material cured material 8° is disposed on the semiconductor wafer 3 (a»' surface in contact with the fixing resin layer 6〇) 41 (refer to 41 the sub-part arrangement lubricated material (10) having the terminal surface 41 Opening/forming the first layer of the edge layer 9 (refer to Fig. 3 (b)). It seems that the insulating layer 9G is not particularly limited as in the case of the month 1, but the organic resin composition is preferable, the butyl π 1 amine, the fat, the polybenzoic acid A resin composition such as a polyamide resin such as a polyester resin, a polystyrene ring, a ruthenium ring, a ruthenium ruthenium or a ruthenium resin, etc. The sensitization, resolution, and glass transition of the ray, the light conversion, development, and the like The temperature and elasticity of the Yuxuan material sealant hardened material 8G close-packed material = and (4) 峨醢一 in the electronic parts configuration sealant hardened material 80 has a terminal surface ΐ 脂 fat method, not special mosquitoes, The solvent contained in the foregoing resin composition can be pre-baked by the rotation of the job 11 = ff, the spray coating method using a spray coater, the dipping method, the printing method, the New method, and the like. The coating of the above-mentioned resin composition can be carried out by diluting with a suitable solvent in a suitable solvent, and the coating 1 is not particularly limited. Preferably the final thickness of the coating 0.1~30μιη. When the film thickness is lower than the lower limit 値, it is difficult to sufficiently exhibit the electronic zero-material cured product (10) as the lining, and the pure processing pattern by the upper saki is too large, and the processing time is small, and the yield is lowered. Further, it is not particularly limited, but is preferably 50 to 15 (TC is preferable, 60 to 130. (: more preferably, /, /, and [9] secondly] corresponds to the semiconductor wafer u in the first insulating layer 9 The opening portion 91 is formed by exposure and development (see FIG. 3(c)). (Not shown here, the opening portion is formed by exposing the positive photosensitive resin composition and displaying p 41 201233560 The mechanism of 91. On the coating film, stepping ^^ and other warm = the sub-parts are arranged to seal the hardened material 80 light), and then the level of the chemical layer (exposure (hereinafter referred to as the silk exposure department) Part of the unexposed part of the liquid, and due to the presence of heavy gas in the polyamines, the insoluble compounds are insoluble, and the interaction between the lipids and the heavy diazonium compound is due to the wind. The exposed portion is in the developing solution, and promotes the resin 4'. The solubility difference is obtained, and the exposed portion is dissolved and removed, and the exposed portion is obtained. The exposure of the unexposed portion and the unexposed portion is not performed until the unexposed portion is formed. 91. Position, will be like a mask f 7 hunting by the beam corresponding to the opening 91 91 = 1 beam, 200 ~ 500mn In particular, the wavelength of the line is the second, and the developing solution is not particularly limited, and for example, the second solution is removed, and an alkali water-soluble or alkali aqueous solution having a small load on the opening portion 9 can be obtained. Preferably, it is used for the environmental oxidation of sodium, and the use of gas test such as 'ethylamine, n-propanol, etc.! Grade amines such as ceramide, base, sodium, A water and other inorganic triethylamine, P-based diethylamine is calculated as 3 nights; _ shame-n-propylamine and other grade 2 amines, amines, tetramethyl hydrazine, tetrakis-7 methylethanolamine, triethanolamine and other alcohol solutions and in which an appropriate amount of a water-based surfactant such as methanol is added. Aqueous solution.···, etc., such as water/complex organic solvent or formula. Also, it can be used for spraying, dipping, collecting, soaking, ultrasonic, etc. 91 [wall guide: 2 end edge Layer 9 〇, opening method and method: However, it can be formed by Cr or the like by sputtering or the like, and then the layer of conductor 93 is formed (see Fig. 3(e)). The heart of 瑕3 is opened to have an opening. Resistant agent 42 201233560 Resist photosensitive anti-surname agent forming resist layer 100. 疋 疋 'for example liquid or film-like liquid photosensitive resist , the sensitization of the photosensitive layer 92 is formed by the aligning method of the conductive layer 92, and the portion of the liquid is formed by the surface of the conductive layer 93 exposed through the mask having the opening to form the anti-side layer 100. In the case of a film-like photo-detecting shovel, the developing solution is subjected to a film-forming photosensitive resist of 'filming layer 2' to form a resist layer 敕 = laminated f square shape = _ in a simple manner to form an anti-layer _. According to Fig. 3 (i, the second, in the opening of the anti-layer Na, the conductor 93 is formed by mineral deposit (the reference number is high 93 _ _ limited ' _ small resistance and can respond to the letter [13] second, the resist layer 1. The conductive layer 92 other than the removed portion and removed (see FIG. 4 (8)). "The method of removing the anti-surname agent layer 100 and the conductive layer 92 by the 70% conductor 93, and removing the portion of the conductor 93 from the l ^ ion side ( earning) of the conductive layer 92 is removed. ,, the conductor 93 will also be a little thief thin, but the body is formed to be thicker than the conductive | 92, so the conductor 93 will not all,) [Μ] second, the formation of the second insulation The layer 110 is formed so as to cover the conductor V. The material constituting the second insulating layer 11 and the second insulating layer 11 are particularly limited to those in the case of the ith insulating layer 9, [15] Next, the bump μ mouth portion 111 is formed in the second insulating layer 11〇# (see Fig. 4(c)). The method of forming the opening 111 by the insulating layer 11G is not specified. The same method can be used for forming the opening portion 91 for the first insulating layer 90. Fig. 4 ([d^'in the second opening portion 1U of the insulating layer n〇 forms the bump 18 (the material of the reference bump 18 is not It is particularly limited, preferably from tin (Sn), lead 7 'silver 43 201233560 =?:), indium (In), lex (Zn), nickel (tetra), bismuth (Sb), iron (four)

It銅(CU)構成的群組中選出的至少2種以上的金屬 由Γρί早f構成。其中，若考慮熔融溫度及機械物性， =f，之合金、無鉛焊料Sn_Bi之合金、Sn Ag_Cu之合 金、Sn-In之合金、Sn_Ag之合金等含％之合金構成。 盘』ίΓίΙ8Λ方法不特別限定’例如:將以前述含Sn之合金 声' 之甘糊劑’以網版印刷等方法塗佈於第2絕緣 二第2 ^次，通過焊料回流褒置而形成之方法、或 2 ίϊΐ之開口部111載置由前述含有Sn之合金構成的 方i等，。、焊球塗佈助焊劑，其次通過焊料回錄置以形成之 配線f由如以上之步驟，可於電子零件配置密封材硬化物8〇形成 予以ί Γ層之電子零件配置密封材硬化物8〇 而，電子裝置3G之步驟，利用圖4加以説明。 (=⑽予以分割而獲得電子裝置3〇(參照為圖步驟之圖^及 1]、=t零件配置密封材硬化物80之分割，可以對各半導體曰片 化己置具有多機能之半導體晶片u，故能達成電子機能 利 订分割的利用切割機的方法。 佳為此間便進 的休^該方式獲得之電子裝置30，係將配線牽引到半導轉曰Η 11 3白=的外側’能使輸入輪出的酉己線數增大，故能 之南機能化。又，當於支持基板5()_半導體晶片=時裝 44 201233560 照射而炼融之溫度降低的固定樹脂層60， 故此將剝離電子零件配置密封材硬 低，可以確實抑制或防止半導體晶片η及^材層; 化，故能提供高可靠性之電子裝置3〇。 河曰艾貝劣 藉由以上步驟，可形成經分割(單片化；)的電子裝置3〇。 奶八ί，ί貫施形態中，於藉由分割而形成之電子裝置30中，由 、，度为。彳之岔封材層70構成密封部η、由經分_ g -構成第1絕緣層Μ、由智分室,丨上，]第絕緣層90 …由經-二成之絕緣層11G構成第2絕緣層 風l等冤體93構成貫孔15及導體層16。 i加^針對將經分狀電找置3G絲於基板之步驟利用圖 之凸ΓίΓίίίΓίfn 30安裳於基板之步驟，係將電子裝置如 (參照圖1)’。、 之上形成之配線電路19予以連接的步驟 18的法不特別限定，當凸塊 電性連^。藉由凸塊18與配線電路19的金屬進行結合而 ΐ由驟’可製造電子裝置封裝體1〇。 ^ 只施形釔中，已針對以密封材層70將丰導妒曰Η 11 予^封的情形説明，但是，不限_ + ^將j二 凡件，也可密封各種電子零件，盆 巧日日片11之一的主動 波器等被動元件等 其他电子零件，例如:電容器、遽 «第2實施形態》 其次，針對製造電子裝置封奘辦 方法之第2實施形態加以説明-之電子裳置封裝體之製造 亦即’電子裝置封裝體1〇之 — 電子裝置之製造方法，包含以下步^方法之苐2貫施形態係_ 45 201233560 步驟’於支持基材之表面設置固定樹脂層； 隙步 使得彼此相鄰的電子零件之間形成間 隙的方式，在該固定樹脂層上配置多數電子跫 定樹脂層鱗前述電子料gj定於前述域i材上.、’η 密封材層形成步驟，以密封材職前^件 固定，層及前述電子零件上使密封材層形】，以牛立在别这 ^支==0細㈣魏酬材硬化物從前 其特徵為： 密ΐ材硬化兼獅步驟，當藉由加熱前述密封材而使 ΐϊίΓίϊ於前述固定樹脂層照射活性能量射線而使前 述支融，猎此將前述電子零件配置密封材硬化物從前 今明以十??形態之電子裝置封裝體10之製造方法加以 。月’但疋重點放在與第1實施形態之電子裝 方法，_，並將關於同樣事項的說明省略。财體1G之& +驟前it ΐ=ΐΓ，進行密封材硬化步驟後實施剝離 ίΐ 土一疋本貫轭形匕、中，係實施同時進行密封材硬化步驟盘剝 離步驟的賴材硬化兼_步驟，除此以外與第丨實施形態相同。 亦即’第2實施形態中，同時進行使密封材層7〇硬化之密封 化賴5]、與將電子零件配置密封材硬化物⑽__離步 驟[6]_，且對於固定樹脂層60照射活性能量射線使固定樹脂層6〇 之炫融黏度降低後，為了使密珊層7G硬化，進行加熱由 本步驟為該構成，關時進行密封材層7G之硬 定樹 2溶融。亦即，能同時進行密封材層7〇之硬化、與電子置 岔封材硬化物80之剝離。 " 其結果，能縮短電子裝置封裝體1〇之製造步驟，故能提高生 產性，且成低廉地製造電子裝置封裝體1〇。 46 201233560 加熱密封材層70及固定樹脂層60的溫度為100〜20(TC較 土〜19〇°C尤佳。又，加熱時間不特別限定，為30分鐘〜δ小 ϊίΐ?〜6小時尤佳。藉由使加熱溫度及加熱時間為上述範圍， ί ίϊίΐΓ封材層7G之硬化、以及在活性能量射線照射後之 固疋樹脂層60之溶融。 熊本ΐ明之第1及第2實施形態依據圖示之實施形 製造方法、電子裂置、電找置封裝體之製造 方法及電子裝置封裝體，但本發明不限於該等。 =如’可將本發日狀電子裝置之製造方法及電子裝置 用Ϊ樹脂組成物所含之各構成材料，取代為能夠發 揮同樣機此者，或者附加任意構成者。 方牛ϋίΐ之電子裝置之製造方法及電子裝置裝體之製造 方法中’視品要也可追加任意的步驟。 «弟3實施形態》 署射ίΐ明第3 Ϊ施形態之電子裝置之製造方法及電子裝 加以^明。找方法之刖’針對第3實施形態使用之暫時固定劑 <暫時固定劑> , 分的樹脂纟蛾物構成者。 阳τ'、、π 曰成 使用如此之暫咖定劑，當隔著使用暫辆定 (之:定樹脂 化物從支絲材脱離。 电％件配置讀材硬 明 以下針對構成含有該樹脂成分之樹脂組成物的各成分依序説 樹腊成分，具有在暫咖料(電子零件配置密珊硬化物戈 47 201233560 將電子零件配置密封材硬化物 再者，樹脂成分，會由於暫時 縣材之機此。 子化因而溶融或氣化，1接入二加熱而熱分解以低分 置密封材魏敏續基材故具有轉電子零件配 樹脂成分只要是具請職能者即可， 聚趟糸樹脂、聚胺甲酸酯季撒炉、r '酸亞月女糸树月曰、 系樹脂、聚烯烴系樹脂等呵吏曰用i甲中基 ==樹脂、降_ =專之中，較佳為降获烯系樹脂、聚碳酸酉旨系樹脂、 Ϊ及Uii丙稀酸系樹脂，尤佳為降获稀系樹脂或聚碳酸醋土系樹 ^該專由於能更為顯著發揮前述機能，故宜選用為作為樹脂 1 嫌石山系ff职不特別限制，例如:聚丙烯碳酸酯樹脂、聚乙 以-聚丁烯碳_旨樹脂、順式2,3_聚丁稀她旨樹^^^3曰 丁稀碳酸醋樹脂、α，β-聚異丁稀碳酸醋樹脂、α，γ_聚異丁稀碳酸 酉旨樹脂、順式1，2·聚環丁烯碳酸酯樹脂、反式u•聚環丁稀碳酸酿 树脂、順式1，3-聚環丁烯碳酸酯樹脂、反式u_聚環丁烯碳酸醋樹 脂、聚己烯碳酸酯樹脂、聚環丙烯碳酸酯樹脂、聚環己烯碳酸酯 樹脂:1，3-聚環己烧碳酸醋樹脂、聚(曱基環己烯碳酸酿)樹脂、聚(乙 烯基環己烯碳酸酯)樹脂、聚二氫萘碳酸酯樹.脂、聚六氫苯乙烯碳 酸酯樹脂、聚環己烷丙烯碳酸酯樹脂、聚苯乙烯碳酸酯樹脂、聚(3_ 苯基丙烯碳酸酯)樹脂、聚(3-三甲基矽氧基丙烯碳酸酯)樹脂、聚(3_ ^基丙烯醯氧基丙烯碳酸酯)樹脂、聚全氟丙烯碳酸酯樹脂、聚降 莰稀碳酸酯樹脂、聚降莰燒碳酸酯樹脂、外向_聚降莰烯碳酸醋樹 脂、内向-聚降莰烯碳酸酯樹脂、反式聚降莰烯碳酸酯樹脂、順式 聚降莰烯碳酸酯樹脂，可以使用其中1種或組合使用2種以上了 •又，聚碳酸酯系樹脂，也可使用例如:聚丙烯碳酸g旨/聚環己稀 碳酸酯共聚物、1，3-聚環己烷碳酸酯/聚降莰烯碳酸酯共聚物、聚 [(氧基羰氧基-1，1，4,4-四甲基丁烧)^11;-(氧基羰氧基-5-降莰烯_2-内 48 201233560 向-3-，向-二曱燒)]樹脂、聚[(氧基羰氧基」，冬二曱基丁烧)_alt_(氧 基羰氧基-5-降莰烯-2-内向_3_内向-二甲烷刀樹脂、聚[(氧基羰氧基 Ύ，1，4,4-四甲基丁烷)_alt_(氧基羰氧基_對二甲苯)]樹脂、及聚氧基 羰氧甲基丁燒Hit-(氧基羰氧基·對二曱苯)]樹脂、1，3-聚環 己烷碳酸酯樹脂/外向-聚降莰烯碳酸酯樹脂、丨，3_聚環己烷碳酸酯 樹脂/内向-聚降莰烯碳酸酯樹脂等共聚物。 时一再者’聚碳酸酯系樹脂除上述以外，也可使用在碳酸酯構成 單元中至少具有2個環狀體之聚碳酸酯樹脂。 環狀體之數，只要在碳酸酯構成單元中為2個以上即可，為 你ϋ佳2或、更佳’ 2又更佳。藉由以含有如此之數的環狀體 為叙酸g旨構成單元，能使支絲材與電子料配置絲材硬化 會子：加熱’該聚碳酸_ AS為 再者，多數環狀體各為5員環或6昌土 ^ , 碳酸醋構成單元的平面性，故能使對於溶g解g為，持 物時，能更顯著發揮如前述效果。 合衣狀體為月曰核化合 社姐若考慮此等因素，聚碳酸龄樹腊中，碳酸㈣"- ο 佳構造例如以下列化學式(lx)表示者。冓成早7L之尤At least two or more metals selected from the group consisting of It copper (CU) are composed of Γρί early f. Among them, in consideration of the melting temperature and mechanical properties, an alloy containing %, such as an alloy of nf, a alloy of lead-free solder Sn_Bi, an alloy of Sn Ag_Cu, an alloy of Sn-In, or an alloy of Sn_Ag, is used. The method of the invention is not particularly limited to, for example, a method in which a paste of the alloy containing Sn described above is applied to the second insulation 2 by screen printing or the like, and is formed by solder reflow. The method or the opening portion 111 of the two layers is placed on the side i or the like composed of the alloy containing Sn described above. The solder ball is coated with the flux, and the solder f is formed by the solder re-recording. The wiring f is formed by the step of the above, and the electronic component is disposed in the electronic component to form the cured material. Incidentally, the steps of the electronic device 3G will be described using FIG. (= (10) Division is performed to obtain an electronic device 3 (refer to the figure and figure 1 of the figure), and the division of the sealing material cured material 80 of the =t part, and it is possible to form a semiconductor wafer having multiple functions for each semiconductor chip. u, so it is possible to achieve a method of using the cutting machine for the electronic function. The electronic device 30 obtained by this method is to draw the wiring to the semi-conducting turn 11 3 white = the outer side' The number of lines of the input wheel can be increased, so that it can be functionalized in the south. Moreover, the fixed resin layer 60 whose temperature is lowered by the support substrate 5 () semiconductor wafer = fashion 44 201233560 is reduced. The peeling of the electronic component arrangement sealing material is hard and low, and the semiconductor wafer η and the layer of the semiconductor wafer can be surely suppressed or prevented, so that the electronic device 3高 with high reliability can be provided. The river Aibei can be formed by the above steps. The electronic device 3 is divided (single-chip;). In the form of the milk, the electronic device 30 formed by the division is made up of, and the degree is a portion η, which is composed of a fraction _g - constitutes a first insulating layer Μ The sub-chamber, the upper layer, the second insulating layer 90 ... the second insulating layer 11G is composed of the second insulating layer 11 and the body 93 constitutes the through hole 15 and the conductor layer 16. The step of placing the 3G wire on the substrate is performed by the step of attaching the electronic device to the substrate, and the method of the step 18 of connecting the electronic circuit device (see FIG. 1) to the wiring circuit 19 formed thereon is not particularly limited. When the bumps are electrically connected to each other, the bumps 18 are combined with the metal of the wiring circuit 19, and the electronic device package 1 can be manufactured. ^ In the case of only the shape, the sealing layer 70 is The description will be given to the case of Fengfeng 妒曰Η 11 to ^, but not limited to _ + ^ will be two pieces, can also seal a variety of electronic components, one of the active components such as the active wave of the pottery day 11 Other electronic components, for example, capacitors, 遽 «Second Embodiment" Next, the second embodiment of the method for manufacturing an electronic device sealing method will be described as an electronic device package. - the manufacturing method of the electronic device, comprising the following steps (2) Form of application _ 45 201233560 Step 'Set a fixed resin layer on the surface of the supporting substrate; a step of forming a gap between the electronic parts adjacent to each other, and disposing a plurality of electron-setting resin layers on the fixing resin layer The above-mentioned electronic material gj is set on the above-mentioned domain i material. The 'η sealing material layer forming step is fixed by the sealing material before the sealing member, and the layer and the electronic component are formed on the sealing layer layer shape. ^支==0细(四)Wei material hardened material formerly characterized by: a hardened material hardening and lion step, which is caused by heating the aforementioned sealing material to illuminate the active resin ray by irradiating the active resin ray, The above-mentioned electronic component arrangement sealing material cured product is applied from the manufacturing method of the electronic device package 10 in the form of a tenth. The month is focused on the electronic device method of the first embodiment, and the description of the same matters is omitted. 1G & + before the step ΐ = ΐΓ, after the sealing material hardening step is carried out, peeling ΐ ΐ 疋 疋 疋 疋 疋 匕 匕 匕 匕 匕 匕 匕 匕 匕 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封 密封The procedure is the same as that of the third embodiment. In the second embodiment, the sealing material layer 7 is simultaneously sealed and cured, and the electronic component is placed in the sealing material cured material (10)__ away from the step [6]_, and the fixing resin layer 60 is irradiated. After the active energy ray lowers the viscous viscosity of the fixing resin layer 6 ,, in order to harden the dense layer 7G, heating is performed by this step, and when it is closed, the hard slab 2 of the sealing material layer 7G is melted. That is, the sealing of the sealing material layer 7 can be simultaneously performed, and the peeling of the electronically sealed sealing material cured material 80 can be performed. " As a result, the manufacturing steps of the electronic device package 1 can be shortened, so that the productivity can be improved and the electronic device package can be manufactured inexpensively. 46 201233560 The temperature of the heating sealing material layer 70 and the fixing resin layer 60 is 100 to 20 (TC is more preferable than the soil to 19 〇 ° C. Further, the heating time is not particularly limited, and is 30 minutes to δ small ϊ ΐ 〜 〜 〜 6 hours especially Preferably, the heating temperature and the heating time are in the above range, and the curing of the sealing layer 7G and the curing of the solid resin layer 60 after the active energy ray irradiation are performed. The first and second embodiments of Kumamoto Akira are based on The manufacturing method of the embodiment, the electronic splicing, the manufacturing method of the electrical arranging package, and the electronic device package are shown, but the present invention is not limited to the above. = "How to make the electronic device of the present invention and the electronic device" In the device, the constituent materials contained in the resin composition are replaced by the same ones, or any other components are added. In the method of manufacturing the electronic device and the method of manufacturing the electronic device package, It is also possible to add an arbitrary step. «Development of the electronic device of the third embodiment of the third embodiment of the ΐ ΐ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 When the fixing agent <temporary fixative> is a component of the resin moth moth, the cations of τ ' 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The wire material is detached. The electric component is configured to read the material. The following is a component of the resin composition constituting the resin composition containing the resin component, which is in the form of a bark material (the electronic component is arranged in a hard-cured material Ge 47 201233560) The electronic components are arranged with the cured material of the sealing material. Further, the resin composition will be due to the temporary use of the material. The sub-chemical is thus melted or vaporized, and the two components are heated and thermally decomposed to a low-separating sealing material. The electronic component of the electronic component can be used as long as it has the function of the resin. Polyurethane resin, polyurethane seasoning furnace, r 'acid yoghurt eucalyptus eucalyptus, resin, polyolefin resin, etc. iI use the medium base == resin, drop _ = special, preferably to reduce the olefinic resin, polycarbonate bismuth resin, bismuth and Uii acrylic acid resin, especially to reduce the rare resin Or polycarbonate soil tree ^ This special purpose can play a more significant role in the aforementioned functions Therefore, it should be selected as the resin 1 shishan ff job is not particularly limited, for example: polypropylene carbonate resin, polyethylene-polybutylene carbon _ resin, cis 2,3_ polybutyl condensate her purpose tree ^^ ^3 曰丁稀碳酸 carbonate resin, α,β-polyisobutyl carbonate resin, α,γ-polyisobutyl phthalate resin, cis 1,2·polycyclobutene carbonate resin, trans u• Polycyclobutylene carbonated resin, cis 1,3-polycyclobutene carbonate resin, trans u_polycyclobutene carbonate resin, polyhexene carbonate resin, polycyclopropene carbonate resin, Polycyclohexene carbonate resin: 1,3-polycyclohexane carbonated resin, poly(fluorenylcyclohexene carbonated) resin, poly(vinylcyclohexene carbonate) resin, polydihydronaphthalene carbonate Tree, fat, polyhexahydrostyrene carbonate resin, polycyclohexane propylene carbonate resin, polystyrene carbonate resin, poly(3-phenylene carbonate) resin, poly(3-trimethyldecyloxy) Propylene carbonate) resin, poly(3-based propylene methoxy propylene carbonate) resin, polyperfluoro propylene carbonate resin, poly-thin-thin carbonate resin, poly-thinium carbonate Resin, exo-polymethene carbonated vinegar resin, inward-polyethylene carbonate resin, trans polynorbornene carbonate resin, cis polynorthene carbonate resin, one type or combination of them may be used. Two or more types of polycarbonate resin, for example, polypropylene carbonate/polycyclohexene carbonate copolymer, 1,3-polycyclohexane carbonate/polypentene carbonate Copolymer, poly[(oxycarbonyloxy-1,1,4,4-tetramethylbutyring)^11;-(oxycarbonyloxy-5-nordecene_2-inside 48 201233560 to - 3-, toward-bi-baked)] resin, poly[(oxycarbonyloxy), dimethylidene butyl)_alt_(oxycarbonyloxy-5-nordecene-2-inward _3_ inward - dimethane knife resin, poly[(oxycarbonyloxyanthracene, 1,4,4-tetramethylbutane)_alt_(oxycarbonyloxy-p-xylene)] resin, and polyoxycarbonyloxy Butadiene-Hit-(oxycarbonyloxy-p-quinone) resin, 1,3-polycyclohexane carbonate resin/exo-polynorthene carbonate resin, hydrazine, 3_polycyclohexane A copolymer such as a carbonate resin/inward-polyetherene carbonate resin. In addition to the above, a polycarbonate resin having at least two annular bodies in a carbonate constituent unit may be used. The number of the cyclic bodies may be two or more in the carbonate constituent unit, and is preferably 2 or more preferably 2 or more. By using such a ring body as a constituent unit of the acid group, the wire material and the electronic material can be arranged to harden the wire: heating the polycarbonate_ AS is further, and most of the rings are It is a five-membered ring or a six-potential soil, and the carbonated vinegar constitutes the planarity of the unit. Therefore, it is possible to solve the problem of the dissolution of g, and the effect of the above can be exhibited more remarkably. If the suit is considered to be such a factor, the carbonic acid (4) "- ο good structure is represented by the following chemical formula (lx).冓成早7L especially

’具有以上述化學式⑽表示之碳酸 又 (IX) 酯構成單元的聚碳酸 49 201233560 酉旨的縮 ㈣酸：雜之碳酸： 又，以上述化學式(IX)表示之碳酸醋構成單元令 — 羥基所鍵結之碳原子H有3個 ；1此: f发，之$解性，其結果能兼顧作^時二劑 ί更為ίΐ，。、祕分解時間。再者’能使對於溶劑之^ 醇具有之羥基所鍵結之碳原子，較^示一 成縮合多環系構造的2個環她風奈(亦即，形 羥基所鍵結之❹h』?)5其齡料鍵結，並且在該等'Polycarbonic acid having a carbonic acid (IX) ester structural unit represented by the above chemical formula (10) 2012 20126060 condensed (tetra) acid: heterocarbonic acid: Further, the carbonated vinegar represented by the above chemical formula (IX) constitutes a unit-hydroxyl group There are three carbon atoms H in the bond; one: f, the solution is decomposable, and the result can be combined with two doses of ί. Secret time. Furthermore, the carbon atom to which the hydroxyl group of the solvent has a hydroxyl group can be compared with the two rings of the condensed polycyclic structure (that is, the ❹h of the hydroxy group). ) 5 years old material bond, and at these

再，，多數環狀體’除了脂環化合物以外 合物。各環狀體為雜脂環化合物時 U為f月曰^ 例如以下列化學式⑽表U日巾桃s日構成早狀尤佳構造Further, most of the cyclic bodies 'except for the alicyclic compound. When each ring is a heteroalicyclic compound, U is f 曰 曰 ^ For example, the following chemical formula (10) is shown in U.

(2X) 又具有上述化學式(2X)表示之碳酸酯構成 系樹月Γ可^用以下列化學式㈣表示之趟二醇盘 之碳酸二酯的縮聚反應而獲得。 厌.5文一本酉曰 50 201233560(2X) The carbonate structure represented by the above chemical formula (2X) can be obtained by a polycondensation reaction of a carbonic acid diester of a decanediol disk represented by the following chemical formula (IV).厌.5文一本酉曰 50 201233560

W 之碳_構成單元’例如以下列化學式(2A)表示之1 4 : 矣:梨醇(異山梨離⑽福⑼型’或下狀學式㈣ 不，.3,6_二去水甘露醇(去水甘露糖醇(isomannide))型。The carbon_constituting unit of W is, for example, represented by the following chemical formula (2A): 4: 梨: sorbitol (isosorbate (10) Fu (9) type or lower formula (4) No, .3, 6_ di-dehydrated mannitol (Dehydrated mannitol) type.

聚碳酸酯系樹脂之重量平均分子量(Mw)為1，〇〇〇〜ι，οοο,οοο較 ’ 5’〇〇〇〜8〇〇,〇〇〇又更佳。藉由使重量平均分子量為上述下限以 獲得提高對於支持基材之透濕性的效果，並可獲得成膜性 =效果。又，藉由為上述上限値以下，能獲得更顯著之對於各 :谷Μ之;谷解性、及由於暫時固定劑之加熱所致炫融黏度降低的 效果。 友又，聚碳酸酯系樹脂之聚合方法不特別限定，例如可使用光 氣法(溶巧严自旨錢法(躲法)*公知的聚合方法。 單元者。 〇〇降坎烯糸樹脂不特別限定，例如包含以下列(1Y)表示之構造 51 201233560The polycarbonate-based resin has a weight average molecular weight (Mw) of 1, 〇〇〇~ι, οοο, οοο, and more preferably 5' 〇〇〇 to 8 〇〇. The effect of improving the moisture permeability to the supporting substrate can be obtained by setting the weight average molecular weight to the above lower limit, and the film forming property = effect can be obtained. Further, by setting the upper limit 値 or less, it is possible to obtain an effect which is more remarkable for each of the gluten, the glutenability, and the decrease in the viscous viscosity due to the heating of the temporary fixing agent. Further, the polymerization method of the polycarbonate resin is not particularly limited, and for example, a phosgene method (a method known in the art) can be used. The polymerization method is known. It is specifically limited, for example, includes the structure represented by the following (1Y) 51 201233560

其、Rj4各為氣、直鍵狀或*支狀之碳數1〜2〇之炫 二方香矢基、脂核族基、環氧丙醚基、下列取代基 者。又，m為0〜4之整數。 R5 R6 —(CH)n—Si—R7 (2 γ) R8 =Y)中，R5為氫、甲基或乙基，r6、r7及尺8各為直鍵狀 ^支狀之碳數1〜20之燒基、線狀或分支狀之碳數u之燒氧 基、直鏈狀或分支狀之碳數P20之烷基羰基氧基、直鏈狀或分支 狀之碳數1〜20之烧基過氧基、取代或未取代之碳數6〜2〇之芳氧 基中任一者。又，η為0〜5之整數。 刖述直鍵狀或分支狀之碳數丨〜2〇之烧基不特別限定，例^口： 甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基 基等。 該等之中，較佳為與構成暫時固定劑(樹脂組成物)之各種成分 的互溶性或對於各種溶劑之溶解性、以及將電子零件配置密封材 硬化物與支持基材暫時固定時之機械物性優異的丁基、癸基。 剷述芳香族基不特別限定，例如苯基、苯乙基、萘基等，該 等之中，車乂佳為將電子零件配置密封材硬化物與支持基材暫時固 定時之機械物性優異的苯乙基、萘基。 前述脂環族不特別限定，例如:環己基、降莰烯基、二氫二環 五-二乙，、四環十二基、甲基四環十二基、四環十二-二乙基、二 曱基四環十二基、乙基四環十二基、亞乙基四環十二基、苯基四 52 201233560 %十二基、環五_二乙基之三元體等脂環族基等。 淮/ίϊϊί L較佳絲電子料配置密崎硬化減支持基材 性優丁 Ϊ的:α及暫時固定劑之加熱時之熟分解 ，述取代基(2Υ)巾之Μ，只要是氫、曱基或乙基即可 別限:，但較佳為暫時固定劑之加熱時之熱分解 ^ 别述取代基(2Υ)中之Μ、R7及R8只要是各為直鍵^^ *狀之碳數1〜2。之麟、錢狀齡纽之魏㈣之院氣 〜2G找紐基氧基、_域分支‘ —者即可，不定·^氧基任 如此的取代基，例如:曱氧基、乙氧基、丙氧基、丁 氧又氧Ϊ、丁酿氧基、曱基過氧基、異丙土基過 j 4二τ基過氧基、4氧基、紐苯氧基、萘氧基 ^中’較佳為暫時固定時對於支持基材之密合性、電子= ""封之機械特性優⑽曱氧基、乙氧基：丙U。 心：ϊί (，m為0〜4之整數’雖不特別限定，二 或為較佳。m為0或！時，以前述通式(ιγ)表示之 可以用下列(3Υ)或(4Υ)表示。 苒k早το ’And Rj4 are each a gas, a direct bond or a *-branched carbon number of 1 to 2 炫 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二Further, m is an integer of 0 to 4. R5 R6 —(CH)n—Si—R7 (2 γ) R8 =Y), R5 is hydrogen, methyl or ethyl, and r6, r7 and scale 8 are each a straight bond-like carbon number 1~ 20 calcined, linear or branched carbon number a alkoxy group, linear or branched carbon number P20 alkyl carbonyloxy group, linear or branched carbon number 1 to 20 Any one of an oxy group having 6 to 2 carbon atoms having an oxy group, a substituted or unsubstituted carbon group. Further, η is an integer of 0 to 5. The alkyl group having a direct bond or a branched carbon number 丨~2〇 is not particularly limited, and examples include a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, and the like. . Among these, it is preferably a miscibility with various components constituting the temporary fixing agent (resin composition), solubility in various solvents, and a mechanism for temporarily fixing the electronic component placement sealing material cured product and the support substrate. Butyl and fluorenyl groups excellent in physical properties. The aromatic group is not particularly limited, and examples thereof include a phenyl group, a phenethyl group, a naphthyl group, and the like. Among them, the ruthenium is excellent in mechanical properties when the electronic component is placed in a sealed material and the support substrate is temporarily fixed. Phenylethyl, naphthyl. The aforementioned alicyclic group is not particularly limited, and examples thereof include cyclohexyl, norbornyl, dihydrobicyclopenta-diethyl, tetracyclododecyl, methyltetracyclododecyl, tetracyclododeca-diethyl. , anthracene, tetradecyltetradecyl, ethyltetracyclododecyl, ethylenetetracyclododecyl, phenyltetracycline 52 201233560% dodecyl, cyclopenta-diethyl ternary, etc. Family base, etc. Huai / ίϊϊί L preferred silk electronic material configuration Mizusaki hardening to reduce the support of the base material 优 : :: α and temporary fixative heating decomposition, the substituent (2 Υ) towel, as long as it is hydrogen, 曱The base or the ethyl group may be limited to: but preferably, the thermal decomposition of the temporary fixing agent during heating; the substituents (2Υ) of the substituents, R7 and R8 are each a carbon having a direct bond Number 1 to 2. Zhilin, Qianzian Ling, Wei (4), the courtyard gas ~ 2G to find neoyloxy, _ domain branch '- can be, indefinitely ^ oxy, such a substituent, such as: decyloxy, ethoxy , propoxy, butoxyxanthene, butyloxy, decylperoxy, isopropylidene, j 4 ττ-peroxy, methoxy, neophenoxy, naphthyloxy It is preferable that the adhesion to the support substrate and the electron = "" mechanical properties are excellent (10) methoxy group, ethoxy group: propylene U. The heart: ϊί (, m is an integer of 0 to 4' is not particularly limited, and two or more is preferable. When m is 0 or !, the following formula (ιγ) can be used for the following (3Υ) or (4Υ) Said. 苒k early το '

(3 Y) R1 R2 R3 R4 53 201233560(3 Y) R1 R2 R3 R4 53 201233560

(4 Υ) R1 R2 R3 R4 前述式(3Y)及(4Y)中，Ri〜r4各為氯 =之絲、繼基、峨基、魏= 如述取代基(2Y)中之^為〇〜5之整數 in為G時，魏介蛛碳鍵而直接鍵妹11 ㈣之齡雛及軒料配& 成f田述^51Y)表示之構造單元不特別限定，评由將^ 烯、5-曱基降莰烯、5_乙基降莰 了„欠 ，基降茨婦、5-癸基降茨烯、5_苯乙 ^ _辛基降坎烯、5- 茨婦、5-三甲基魏降获稀、5_三& ^ ^二乙氧基石夕基降 氧基石夕基降茨稀、5-二甲基甲氧f降邊烯、5_甲基二甲 烯等降_轉舒崎合魏响基甲基降茨 將前述降莰烯系單體聚合^， 聚合’也可將多數嶋轉體進的降莰烯系單體進行 ^拉較佳為將電子零件配置密封材;:更烯系單體 固定時之顧雛優異的&基^化=支持級進行暫時 前述降__料特職定，^^氧基甲基稀。 之單-構造單元形成，也可由多述通式(n〇表示 .前述降莰烯系樹脂，更具體而ΐ'早，成。 3 7乙基降莰烯、聚丙基降“聚甲基降 則己基咖'聚庚基CSS:= 54 201233560 癸基降茨烯、聚苯乙 ―， シ矽基降获烯、聚二基發基降莰烯、聚甲基1氧基 稀等单-聚合物、稀、聚環氧丙氧基，基_ 環氧丙氧基甲基降3、氧基f基降_共聚物、降获渗 共聚物、癸基降获♦三乙氧二乙氧基石夕基降1茨辦 環氧丙氧基f基降茨稀^f 共聚物、丁基降茨參 稀共聚物、癸基降破婦-環氧丙氧基f基降茨 基降获稀共聚物等共聚物。土降坎烯-本乙基降__環氧丙氧基尹 進行暫;固定時封材硬化物與支持基材 婦、聚三乙《其功ίΪΪ優異的聚丁基降茨婦、聚癸基降茨 烯-三乙氧婦、聚環氧丙氧基甲基降莰烯叮基降茨 共聚物、7基“^^^絲喊，三乙氧基雜降莰烯 環氧丙藍其L衣乳丙氧基甲基降㈣共聚物、癸基降莰烯- 了瓣烯.苯乙基降 ” 11化反應之組合、自由基或陽離子之聚合而合成。 具體而言，具有贿述通式(1Υ)表示之構造單元的降获烯 ^月曰’例如可藉由使用含姆子源之觸媒、含鎳_之觸媒炸 自由基起始劑等而合成。 、 、又，樹爿曰成分以構成樹脂組成物之全量(含有溶劑時，係排除 溶劑後的全量)的l〇wt%〜loowt%的比例摻合較佳。更佳為以 50wt%以上，尤佳為以80wt%~100wt%的比例摻合。藉由為1〇加％ 以上，尤其80wt%以上，有能減少暫時固定劑熱分解後之殘渣的 效果。又，藉由使樹脂組成物中之樹脂成分加多，有能以短時間 將暫時固定劑熱分解的效果。 如以上之樹脂成分，分類為在酸或驗存在下其熱分解溫度會 降低者、以及熱分解溫度不會降低者。 曰 55 201233560 具體而言，於酸或驗存在下之熱分解溫度會降低之樹脂成 分，例如:聚碳祕糸樹脂、聚醋系樹脂、聚酿胺 樹脂:聚胺甲酸醋系樹月旨、（甲基)丙烯酸酿系樹脂等，可使 1種或組合使用2種以上。該等之中，從熱分 g 觀點，使用聚碳酸醋系樹脂較佳，尤佳為聚丙稀碳酸 烯碳酸酯、1,3-聚環己烧碳酸醋/聚降获你炭酸料聚物。… ^於酸祕存在下之齡解溫度不會降低之細旨成分，例 如降成烯續脂、料烴系樹鱗，可使用射丨種雜合使用 種以上。 ，脂成分選用在酸或驗存在下之熱分解溫度會降低者時 物中更含有由於對於暫時固定劑照射活性能量射線 ，產祕，潍劑，會使該樹脂成分成融於躲暫時固定 背J照射活性能篁射線而熱分解溫度降低者。 邮^ ’藉由使暫時固定劑(樹脂組成物)包含熱分解溫度降低之 =成ϋ及由於對於暫咖定劑照射活性能量射線而產生酸 ΪΪ之時，，因為活性能量射線照射會使樹脂成分之熱 二解皿度降低’故藉由於活性能量射線照射後將暫時固定劑加 ”、、，可獲彳^更為輕易進行使基材從支持基材脱離的效果。 又’納旨成分選用於酸或鹼存在下之熱分解溫度不會降低者 旦使ί翻旨組成物中添加了由於對於暫咖定舰射活性能 生酸或驗的活性劑，#然，脂成分之熱分解溫度 仍…、、不θ因為對於暫咖定綱射活性能量射線而改變。 以對納旨翻於_驗存在下之熱溫度會降低 夺，匕$於樹脂組成物的活性劑加以説明。 (活性劑） ^性劑’、如上所述，係藉由活性能量射線之照射施加能量， 、+、&酸或鹼之活性物質者，具有由於該活性物質之作用使前 处树朐成为之熱分解溫度降低的機能。 响，生背丨不特別限定’例如由於活性能量射線之照射而產生 -欠之一自文發生劑、或由於活性能量射線之照射而產生鹼之光驗發 56 201233560 生劑等 光酸發生劑不特別限定，例如:肆(五氟苯基)概根I甲基苯 基匕♦甲基乙基}苯基撤卿聊呵、參0第三丁基苯基〕婆肆 予，苯基)硼酸鹽(TTBPS_TPFPB)、挪_第三丁基苯基)纂六_ ^鹽(TTBPS-HFP)、三苯基鎏三i甲石黃酸鹽(Tps，、雙(4第三丁 基苯基谳王氟甲磺酸鹽(〇ΤΒΡΙ仰、三〇井(ΤΑΖ·、 苯錄雙(全氟甲烧顧基)酿亞胺 nrmPT 二丁基)苯基鎮、雙(全氟甲烧磺醯基)醯亞胺 -苯基鎏、參(全氟曱烧續醯基)曱基化物(TPS-C1)、 ^、第二丁土苯基)錤參(全氟曱烷續醯基)曱基化物pTBpi_ci) J，可使用其中1種或組合使用2種以上。該等之中，尤其 脂成分线轉度之觀點，肆(五基)侧酸根 甲土本基[4-(1-甲基乙基)苯基爾DPI TPFPB)為較佳。 W 光驗發生劑不特別限定、例如:5 W5-二氮雜雙環 L.?烧、1_(2_石肖基苯曱醯基胺曱醯基)〇米唾等，可使用豆中1 分以上。該等之中’尤其，從有效率降低樹脂成 5箱-1，5·二氮雜雙環㈣)壬毅其衍生 述活性劑為樹脂組成物(暫時固定劑)全量之.約謹，重量 月:ί〜Π〜3G重量％更佳。藉*在該範_，能安定地使樹 月曰成二之熔融黏度降低到目的範圍内。 或此之活性劑’若照射活性能量射線，料生如酸 主：mi t ’據推測由於該生物質的作用會於樹脂成分之 解Ϊίΐί齡解溫麟狀般，其絲會賴赋分之熱分 渺在ΐ、=1對樹脂成分使用為聚碳酸I铺脂之聚丙稀碳酸醋 =:ίί，用光酸發生劑時之熱分解溫度降低的機制加以 稀碳於㈣上似丨所7F ’首先來自於前述光酸發生劑之1^將聚丙 產生二之錄氧予以質子化，並使轉移雜性過渡狀態， 穩疋的互變異構中間體[A]及[B]。其次，中間體[A]由於發 57 201233560 生斷片化為丙酮及c〇2的熱切斷，熱分解溫度降低。又， 一 [B]生成碳酸伸丙酯’且碳酸伸丙酯斷片化為匸〇及产，間體 成熱閉環鱗，熱分解溫度降低。 '形(4 Υ) R1 R2 R3 R4 In the above formulas (3Y) and (4Y), each of Ri~r4 is a chlorine=filament, a sulfhydryl group, a fluorenyl group, and a fluorene = as in the substituent (2Y) When the integer in 5 is G, the structural element of the Weishen spider carbon bond and the direct key sister 11 (four) age and the yoke material & into f field description ^51Y) is not particularly limited, the evaluation will be ene, 5 - fluorenyl decene, 5-ethyl hydrazine „ owed, basal sylvestre, 5-mercapto-decazene, 5-phenylene^ _ octyl decene, 5-z-female, 5-three Methyl-Wei-reduced, 5_3 & ^ ^ diethoxy oxetyl oxocarbazide, 5-dimethylmethoxy f-pentene, 5-methyl dimethylene _Shi Shuqi and Wei Xiangji methyl hydrazine will polymerize the above-mentioned decene-based monomer, and the polymerization will also be able to pull most of the fluorene-reducing olefinic monomers into the electronic components. Sealing material;: When the more olefinic monomer is fixed, the excellent & base = support level is temporarily reduced by the above-mentioned __ _ oxymethyl sulphate. It can also be represented by a plurality of general formulas (n〇. the above-mentioned norbornene-based resin, more specifically, ΐ' early, into. 3 7 ethyl norbornene , Polypropyl drop "polymethyl-reduced hexyl ke" polyheptyl CSS: = 54 201233560 fluorenyl-decazene, polyphenylene-, fluorenyl-reduced ene, polydiyl-based decene, polymethyl Mono-polymer, dilute, polyglycidoxy, _glycidoxymethyl group 3, oxy-f-lower-copolymer, reduced-osmolar copolymer, sulfhydryl group ♦Triethoxy ethoxy ethoxylate 夕 降 1 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧F-based decyl group is reduced by copolymers such as dilute copolymers. The soil is reduced by the decene-ethyl ketone __epoxypropoxy ketone; the fixed material of the sealing material is fixed and the supporting substrate is condensed. Its excellent properties are polybutyl butyl sulfonate, polydecyl decazene-triethoxylate, polyglycidoxymethyl decyl fluorenyl decyl copolymer, 7 base "^^^ , triethoxyhypo-decene oxide, propylene-acrylic acid, L-lactyloxymethyl-methyl (tetra) copolymer, fluorenyl-decene--valerene, phenethyl group, combination of 11 reactions, free radicals Or synthesis by polymerization of a cation. Specifically, it has a bribe (1Υ) The structure of the structural unit of the present invention can be synthesized, for example, by using a catalyst containing a gamma source, a catalyst containing a nickel-based catalyst, a radical initiator, and the like. The bismuth component is preferably blended at a ratio of from 10% by weight to loowt% of the total amount of the resin composition (the total amount after the solvent is excluded), more preferably 50% by weight or more, and particularly preferably 80% by weight. a ratio of ~100% by weight. By adding 1% or more, especially 80% by weight or more, there is an effect of reducing the residue after thermal decomposition of the temporary fixing agent. Further, by increasing the resin component in the resin composition There is an effect that the temporary fixing agent can be thermally decomposed in a short time. The above resin component is classified into those whose thermal decomposition temperature is lowered in the presence of an acid or in the presence of the test, and the thermal decomposition temperature is not lowered.曰55 201233560 Specifically, the resin component whose thermal decomposition temperature is lowered in the presence of acid or test, for example, polycarburizing resin, polyester resin, polyamine resin: polyurethane vinegar The (meth)acrylic resin may be used alone or in combination of two or more. Among these, from the viewpoint of heat fraction g, it is preferred to use a polycarbonate resin, and more preferably a polypropylene carbonate carbonate or a 1,3-polycyclohexane carbonate/polycarbon to reduce the carbonic acid polymer. ... ^ In the presence of acidity, the temperature is not reduced, and for example, it can be reduced to alkene, and hydrocarbons can be used. The fat component is selected in the presence of acid or the thermal decomposition temperature in the presence of the test may be reduced. In addition, the active energy ray is irradiated to the temporary fixative, and the sputum agent is used to make the resin component melt into the temporary fixed back. The J irradiation activity can reduce the thermal decomposition temperature by X-ray.邮] By making the temporary fixing agent (resin composition) contain a decrease in the thermal decomposition temperature = ϋ and when the acid strontium is generated by irradiating the active energy ray with the temporary coffee, the active energy ray irradiation causes the resin The heat-removing degree of the component is lowered, so that the temporary fixing agent is added by the irradiation of the active energy ray, and the effect of detaching the substrate from the supporting substrate can be obtained more easily. The component is selected for the thermal decomposition temperature in the presence of an acid or a base, and the thermal decomposition temperature of the fat component is added to the composition of the composition. The temperature is still..., and not θ because it changes the active energy ray for the temporary coffee. The thermal temperature in the presence of 对 于 降低 _ _ _ _ _ _ _ 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于 于Agent], as described above, is an active substance that is applied by irradiation of an active energy ray, an active substance of +, & an acid or a base, and has a heat of the front tree shrub due to the action of the active substance Decomposition temperature drop The function of the sound is not particularly limited, for example, due to the irradiation of active energy rays - one of the self-generating agents, or the light of the alkali generated by the irradiation of the active energy ray 56 201233560 The acid generator is not particularly limited, for example, 肆(pentafluorophenyl)anthracene I methylphenyl hydrazine ♦ methyl ethyl} phenyl withdrawal cleavage, ginseng 0 third butyl phenyl] Phenyl)borate (TTBPS_TPFPB), turpentyl-tert-butylphenyl) 纂6_^ salt (TTBPS-HFP), triphenylsulfonium tri-i-carhylate (Tps, double (4 third) Phenyl phenyl fluorenyl methane sulfonate (〇ΤΒΡΙ仰, 三〇井(ΤΑΖ·, 苯录双(perfluoromethane)), imiline nrmPT dibutyl) phenyl, double (perfluoro Sulfonyl sulfonyl) quinone imine-phenyl hydrazine, ginseng (perfluoro fluorene-burning sulfhydryl) hydrazide (TPS-C1), ^, second butadiene phenyl) hydrazine (perfluorodecane continuation) The thiol (five base) side acid base soil base [4-( among these, in particular, the viewpoint of the linearity of the fat component line rotation). 1-methylethyl)phenyl DPI TPFPB) is preferred. The test agent is not particularly limited, and for example, 5 W5-diazabicyclo L.?, 1_(2_stone-based phenylhydrazinyl fluorenyl) glutinous rice saliva, etc., can be used for more than 1 point in beans. Among them, in particular, from the efficient reduction of the resin into 5 boxes of -1,5 -diazabicyclo(4)), the active agent is derived from the resin composition (temporary fixative). About, weight month: ί ~ Π ~ 3G wt% is better. Borrow * in this _, can calmly reduce the melting viscosity of the tree into two, or the active agent 'if active energy ray, the raw acid Master: mi t 'It is speculated that the action of the biomass will be based on the solution of the resin component, and the heat will be distributed in the ΐ, =1, the resin component is used as the polycarbonate I Polypropylene carbonate vinegar =: ίί, the mechanism of thermal decomposition temperature reduction with photoacid generator is added to the carbon (4) on the sputum 7F 'first from the above photoacid generator 1 ^ will produce the second generation of polypropylene Oxygen is protonated and transitions to a heterozygous transition state, a stable tautomeric intermediate [A] and [B]. Secondly, the intermediate [A] is thermally cut off from acetone and c〇2 due to the breakage of the hair, and the thermal decomposition temperature is lowered. Further, [B] produces propylene carbonate and the propylene carbonate is fragmented into a crucible and a heat-closed ring, and the thermal decomposition temperature is lowered. 'shape

(增感劑） 暫時固定劑含有活性劑時，可以在含有該活性劑的同時，也 可含有具有使活性繼於特定波長之活性能量鱗表現或增大反 應性之機能的成分即增感劑。 增感劑不特別限定，例如:慧、菲、链、苯并_enzpyrene)、 H(flu_thene)、纟X螢烯(mb_)、花，酮(職th〇ne)、陰丹士林 ‘料(indanthrene)、^’(thi〇xa她ene)_9-酮、2-旦丙基_9H-读嘲 (thi〇Xanthene>9-酮、4_異丙基领-噻噸(thi〇x磁聊)冬酮 、1-氯-4- 丙氧基噻吨酮、及該等之混合物等。 如此之增感劑之含量，相對於前述光酸發生劑等活性劑及光 自由基起始劑之總量100重量份，為100重量份以佳，2 量份以下更佳。 58 201233560 敎八it ϋ樹脂組成物中，不論樹脂成分是於酸或驗存在下之 义现又θ降低者、及熱分解溫度不會降低者任一者，均也可 含有如以下所示之其他成分。 (抗氧化劑） 3即:樹脂組成物(暫時固定劑)也可含有抗氧化劑。 吐劑’具有防止樹脂級成物(暫時固定劑)中產生酸、或 防止自然氧化之機能。 抗氧化劑不特別限定，例如宜使用:CibaFine Chemicals公司 二、註冊商標)1076」及「CibaIRGAF0S(註冊商 才示）168」。 又，其他抗氧化劑，例如也可使用「Cibalrganox 129」、「Ciba rg_x 咖」、「CibaIrganQX 醜」、「CibaCyanQX(註冊商標） 1790」、「CibaIrgan〇x3114、CibaIrgan〇x3125」等。 抗氧化劑之含量，械於上述樹脂成分1〇〇重量份為〇1〜1〇 重量份較佳，0.5〜5重量份更佳。 (添加劑） ，，树脂組成物(暫時固定劑），視需要也可含有酸捕捉劑、丙 烯I系、砍酮系、氟系、乙烯基系等塗平劑、碎 劑箄添知逾丨笙。 π 矽，偶麵不特別限定，例如:3_環氧丙氧基丙基三甲氧基石夕 ，、3_環氧丙氧基丙基甲基=乙氧基魏、3_環氧丙氧基丙基三乙 氧基f烷、對苯乙烯基三甲氧基矽烷、3_甲基丙烯醯氧基丙基甲基 氧基石夕烧、3_曱基丙稀酿氧基丙基三曱氧基石戍甲基丙稀 _基丙基甲基二乙氧基魏、3_曱基丙烯酿氧基丙基三乙氧基石夕 烷、3_丙嫦醯氧基丙基三甲氧基石夕烧、Ν_2_(胺基乙基)_3_胺基丙基 甲基二甲氧基矽烷、Ν-2-(胺基乙基)_3_胺基丙基三甲氧基矽烷、 Ν-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷、3_胺基丙基三基 烧、3_胺基丙基三乙氧基魏、N-苯基各胺基丙基三甲&基石夕烧、 3-威基丙基甲基一曱氧基石夕烧、3-魏基丙基三甲氧基石夕烧、雙(三 乙氧基丙基)四硫醚、3-異氰酸酯丙基三乙氧基矽烷等。可使用其 59 201233560 中1種或組合使用2種以上。 支持藉由含有魏偶聯劑，可達成基材與 化合ί : 定，如:環氧環己烧或…氧化蒎烯等_ _、Μ-環己^甲酿伸本基氧ΐ亞甲基)]雙環氧乙烧等芳香族 可梯用盆由1播十烯狀脂肪族乙烯轉化合物等’ 可使用其中1種或組合使用2種以上。 叨寻 ，組時固定劑)藉由含有稀釋劑，能提高暫時固定~ 岭細旨飾齡驟，錄高辦目定劑^ (溶劑） 又，樹脂組成物(暫時固定劑)也可含有溶劑(溶劑）。 ，，成物藉由含有溶劑，能輕易調整 第3實施形態之溶劑，不特別限定，例如:莱成二^專 職i spirit)類等煙類、甲苯、二甲苯、三甲基苯等芳香雜類精 本丙二醇I甲峻、二丙二醇㈣、二乙二醇單乙n -甲_麵/_、碳酸伸⑽、乙酸⑽、乙酸正獨、乳酸乙 酉曰、3-乙氧基丙酸乙醋、丙二醇單㈣乙酸醋、二乙二醇單乙驗乙 酸丁内_内_、環戊酮、環己酮、甲 基異丁酮、2-細專_、N•甲基_2鲁各烧酮外瓜_ ^rolictoe)等酿胺/内醯胺類，可使用其中i種或將2種以上組合 使用。藉此，能容易調整暫時固定劑之黏度 以暫巧定劑構成之固定樹脂層（_)會變得容^讀基鄉成 θ前述鋪之含1不制限定，為難域物(暫時 I之5〜98重量％較佳，10〜95重量％更佳。 W王 而，當使用碳酸酯構成單元具有至少2個環狀 ^脂作為樹脂成分，且樹脂組成物係含有該樹脂成分*活^曰 Ϊ、，t以該樹脂組成物_之暫時固定劑形紅薄膜(固定樹脂 ^)，會由於加熱而熱分解且低分子化因而熔融，且會由於活十性能 罝射線照射使溶融時之溶融黏度降低。 201233560 1她暫時t舰用如上述構成者時，活性能髓線照射後於 、C之固疋樹脂層之溶融黏度設定為〇 〇1〜1〇〇pa · s較佳。又， 欲將溶融減奴為麵範_時，可歧合樹餘成物中所含 ϋΪίί構紐料’尤其岭翻齡凝侧，並設定該等 又、對溶融黏度設定為該範圍内之效果於後詳述。 體之ίϊίί使時固定劑之本實施形態之電子裳置_ 媸之方法，而製造電子裝置 <電子裝置封裝體> 又 造方3!施形態之電子農置封裝體之製 實施形態之電子裝置封裝二實： 故在此省略説明。 職與弟1貫㈣態大致相同， <電子裝置封裝體之製造方法> 首先，針對製造電子裝置封裝體i 方法之第3實施形態加以説明。體10之電子褒置封裝體之製造 以下電子裝置封裝體10之製造方法之第3實施形態，包含 固定樹脂層形成步驟，將以包含_ 氣化之樹赋分之齡喊分解使熔融或 表面供給後使乾燥而設置固定樹脂層. 疋劑對於支持基材之 電子零件m定步驟’於該JU定樹脂 使得彼此相鄰的電子零件彼此之 ^趨夕數電子零件， 層而將前述電子零件固定於前述支持基^隙隔著前述固定樹脂 定樹脂層及前述電子零件上使密封材電子零件’在前述固 密封材硬卿，祕歸 201233560 贿社社配置錢料子料之電子零件配 分解，使前勒购_所支持之前 化物從前歧絲材獅。 # 了請配^封材硬 步驟於f ί ί封裝體1G之製造方法之111賴脂層形成 Γ 形‘_彡缺赋讀度為歷a · S以 材硬化物之形成，能以在厚度方向及^方向兩^ 均不生,電子零件之位置偏離的狀態進行。 圖2〜4係說明電子裝置封裝體1〇之製造方 之不意縱剖關’該奸錢槌體1G自 g 10 ίί iiii 件20上。亦即，圖2〜4係顯示本發 ^之電子裝置封裝體之製造方法之第3實施形態之示意縱剖面 t又’以下㈣中，目2〜4中之上側記載為「上」、下侧記載為 下」。 [1]首先，準備如圖2⑻所示之半導體晶片（電子 持基板(支持基材)50。 ； 第3實施形態之支持基板50，只要是具有平坦性、剛直性及 耐熱性者即可，不特別限定’較佳為具透光性者。藉此，當樹脂 成分，用會因為活性能量射線照射而使熱分解溫度降低者時，活 性旎量射線能穿透支持基板50側而對於固定樹脂層6〇確實照射 活性能量射線。 … 具透光性之支持基板50，例如以石英玻璃、納玻璃之類的玻 璃材^、或聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚丙 烯、環烯烴聚合物、聚醯胺、聚碳酸酯之類的樹脂材料等為主材 料構成之基板。 Ρ]其次’在支持基板50上(表面)形成固定半導體晶片u之固 定樹脂層60(參照圖2(b);固定樹脂層形成步驟）。 62 201233560 产為固定樹脂層60，使其於之黏 度為膽S以上l〇〇〇〇Pa · s以下。藉此 80時，在厚度方向二方二 不會發生+導體曰曰片η之位置偏離。針對該點 百 又，固定樹脂層6〇於2〇(rc之黏度只要為、二厂 lOOOOPa.s以下即可，但是為3〇Pa.s f 上、 5〇Pa · s以上、5_Pa · s以下更佳=如卿㈣以下較佳， 果。 X下更佳。喊’能更顯著發揮後述效 柄t在測定，係將暫時固定劑之溶液塗佈在石夕基 S.(sensitizer) When the temporary fixing agent contains an active agent, it may contain a sensitizer which is a component which has a function of expressing or increasing reactivity of an active energy scale which is active at a specific wavelength. . The sensitizer is not particularly limited, for example, Hui, phenanthrene, chain, benzo-enzpyrene, H (flu_thene), 纟X fluorene (mb_), flower, ketone (his 〇ne), indanthrene (indanthrene), ^'(thi〇xa her ene)_9-ketone, 2-denyl propyl-9H-read ridicule (thi〇Xanthene>9-ketone, 4_isopropyl collar-thioxanthene (thi〇x magnetic Liao) ketone, 1-chloro-4-propoxy thioxanthone, and mixtures thereof, etc. The content of such sensitizer is relative to the active agent such as the photoacid generator and the photoradical initiator The total amount is 100 parts by weight, preferably 100 parts by weight, more preferably 2 parts by weight or less. 58 201233560 敎 it it ϋ ϋ resin composition, regardless of the resin component in the presence of acid or test, and θ lower, Any one of the components shown below may be contained as long as the thermal decomposition temperature is not lowered. (Antioxidant) 3: The resin composition (temporary fixative) may also contain an antioxidant. The resin is a resin (temporary fixative) that generates acid or prevents natural oxidation. The antioxidant is not particularly limited, and for example, it should be used: CibaFine Chemicals, Inc. 2, registered trademark) 1076" and "CibaIRGAF0S (registrar only) 168". Further, as the other antioxidants, for example, "Cibalrganox 129", "Ciba rg_x coffee", "CibaIrganQX ugly", "CibaCyanQX (registered trademark) 1790", "CibaIrgan〇x3114, CibaIrgan〇x3125", or the like can be used. The content of the antioxidant is preferably 1 to 1 part by weight based on 1 part by weight of the above resin component, more preferably 0.5 to 5 parts by weight. (Additive), a resin composition (temporary fixative), and if necessary, an acid scavenger, a propylene I-based, a chopone-based, a fluorine-based or a vinyl-based coating agent, and a granule may be added. . π 矽, the face is not particularly limited, for example: 3_glycidoxypropyltrimethoxy oxime, 3_glycidoxypropylmethyl=ethoxy wei, 3_epoxypropoxy Propyltriethoxyfane, p-styryltrimethoxydecane, 3-methacryloxypropylmethyloxyxanthine, 3-mercaptopropyloxypropyltrimethoxylate戍Methyl propylene _ propyl propyl diethoxy wei, 3 曱 propylene propylene oxy propyl triethoxy oxalate, 3 propyl methoxy propyl trimethoxy sulphur, Ν _2 (Aminoethyl)_3_Aminopropylmethyldimethoxydecane, anthracene-2-(aminoethyl)_3-aminopropyltrimethoxydecane, anthracene-2-(aminoethyl) )-3-aminopropyltriethoxydecane, 3-aminopropyltriylsulfonate, 3-aminopropyltriethoxywei, N-phenylaminoamidopropyltriamide & Burning, 3-Vinylpropylmethyl-decyloxycarbazide, 3-Williylpropyltrimethoxycarbazide, bis(triethoxypropyl)tetrasulfide, 3-isocyanatepropyltriethoxylate Base decane and the like. It is possible to use one of them in the 2012 201260, or to use two or more of them in combination. Supporting the substrate and compounding by containing a Wei coupling agent, such as: epoxy ring hexane or ... decylene oxide, etc. _ _, Μ-cyclohexyl ketone-stranded oxyalkylene)] One type or a combination of two or more types may be used in the case of an aromatic ladder for use in a double-epoxy Ethylene or the like.叨 , , , , 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有 含有(solvent). The solvent of the third embodiment can be easily adjusted by containing a solvent, and is not particularly limited. For example, Lai Cheng Er 2 full-time i spirit), tobacco, toluene, xylene, trimethylbenzene, etc. Solvents such as propylene glycol I methyl sulphate, dipropylene glycol (tetra), diethylene glycol monoethyl n-methyl acetonide / _, carbonic acid extension (10), acetic acid (10), acetic acid, acetaminophen, 3-ethoxypropionic acid vinegar , propylene glycol mono (tetra)acetic acid vinegar, diethylene glycol monoacetic acid acetic acid butyl _ inner _, cyclopentanone, cyclohexanone, methyl isobutyl ketone, 2-fine _, N • methyl _2 Lu In the case of a ketone-external melamine or a rutheniumamine, one type or two or more types may be used in combination. Thereby, the viscosity of the temporary fixing agent can be easily adjusted so that the fixing resin layer (_) composed of the temporary fixing agent becomes accommodating the base material θ, and the first layer of the coating is not limited, and is a difficult substance (temporary I 5 to 98% by weight is more preferably 10 to 95% by weight. Further, when a carbonate structural unit is used, at least two cyclic resins are used as a resin component, and the resin composition contains the resin component*曰Ϊ, t is a temporary fixing agent-shaped red film (fixed resin) of the resin composition, which is thermally decomposed by heating and is low in molecular weight and thus melted, and is melted by irradiation of living ray rays. 201233560 1 When she temporarily uses the above-mentioned constituents, the melt viscosity of the solid resin layer of C after the active energy of the pith is set to 〇〇1 to 1〇〇pa · s is preferable. In order to reduce the melting of the slaves into a formula, the ϋΪ ί 构 纽 ' ' 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其 尤其As will be described in detail later, the electronic illuminating device of the embodiment of the fixing agent _ 媸 方法 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子 电子The fourth embodiment is substantially the same. <Manufacturing method of electronic device package> First, a third embodiment of the method for manufacturing the electronic device package i will be described. The electronic device package of the body 10 is manufactured by the following electronic device package. The third embodiment of the manufacturing method of the present invention includes a step of forming a fixing resin layer, disassembling it at the age of the group containing the gasification, and supplying the resin layer after melting or surface supply, and drying. The electronic component of the material is fixed in the step of 'setting the resin so that the electronic components adjacent to each other are electrically connected to each other, and fixing the electronic component to the supporting base gap through the fixing resin fixing resin layer And the electronic components on the electronic components are made in the above-mentioned solid sealing material, and the electronic parts of the bribes are arranged to be decomposed. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The formation of the material hardened material can be performed in a state in which both the thickness direction and the ^ direction are not generated, and the position of the electronic component is deviated. Fig. 2 to Fig. 4 are views showing the longitudinal section of the manufacturing of the electronic device package 1 The 奸 槌 该 该 该 该 该 该 该 该 该 该 该 该 该 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 (4) In the middle, the upper side of the heads 2 to 4 is described as "upper" and the lower side is described as "lower". [1] First, a semiconductor wafer (electronic substrate) (support substrate) 50 as shown in Fig. 2 (8) is prepared. The support substrate 50 of the third embodiment may have flatness, rigidity, and heat resistance. It is not particularly limited to those which are preferably translucent. Thus, when the resin component is lowered by the irradiation of the active energy ray, the active ray is able to penetrate the side of the support substrate 50 for fixing. The resin layer 6 〇 is actually irradiated with active energy rays. The light-transmitting support substrate 50 is, for example, a glass material such as quartz glass or nano glass, or polyethylene terephthalate or polyethylene naphthalate. A substrate made of a main material such as a glycol material such as a diol ester, a polypropylene, a cycloolefin polymer, a polyamide or a polycarbonate. Ρ] Next, a semiconductor wafer is formed on the support substrate 50 (surface). The fixing resin layer 60 (see FIG. 2(b); fixing resin layer forming step). 62 201233560 The fixing resin layer 60 is produced so that the viscosity thereof is biliary S or more and l〇〇〇〇Pa·s or less. When in the thickness direction, two squares are not The position of the +-conductor yoke η is deviated. For this point, the fixing resin layer 6 is at 2 〇 (the viscosity of rc is only as long as 1 OOOOPa.s, but 3 〇Pa.sf, 5〇Pa · s or more, 5_Pa · s or less is better = such as Qing (four) is better, fruit. X is better. Shouting 'can more significantly play the effect of the handle t in the measurement, the solution of the temporary fixative is coated At Shi Xiji S.

Rsi5° ^ A司I)以10为/C的速度一面升溫到3〇〜3〇(rc 一面以 期，並測定此時之移位，以於作為測定^ 又，黏度為如上述範圍之固定樹脂層60，可藉由机 旨s ^性劑及抗氧化劑等各種構^^料之 配物綱能以良 形成固定樹脂層6〇之方法不特別限定，例如藉由# 祕 板50上供給暫時固定劑後加熱使乾燥而能輕易地形成:、、土 又，暫時固定劑對於支持基板5〇上供給 旋塗法，n從塗佈/卜鱗之+，尤佳為使職塗法。依照 疋塗法此輕易獲得更均勻且平坦的固定樹脂層6〇。 感使用it塗法時，暫時固定劑使用做(25。〇為約·〜麵〇〇 s者較佳，使用約1000〜50000mPa · S者更佳。 型），C)可利用E型黏度計(東機產業製、黏度計TVE_22 )未取錐體溫度25°c、3分鐘後之値作為測定値。 再者，供給該暫時固定劑之支持基板5〇之轉速設定為約 63 201233560 300〜4，__較佳，設定為約5⑻〜3,5⑻啊更佳。 時，藉由以滿足上述條件將固賴脂層60成膜， 樹脂層6〇之平均厚度為約50〜1〇〇叫。再者，能 更句勻的厚度將如此之厚度的固定樹脂@ 6〇予以成膜。 再者，當定暫時固定劑之黏度(25。〇為A[mPa · s]，且支持A ϊ Π轉速為B[rpm]時’趟狀13〜330較佳，〇.5〜更佳土。 ϋ能轉別均勻且平坦的厚度將平均厚度5G〜 樹脂層60予以成臈。 μ 〜[3]其次，在固定樹脂層60之上配置半導體晶片^，並隔著 固定樹脂層60在支持基板50之上固定半導體晶片n(來昭圖 2(c);電子零件固定步驟）。 —在此’配置半導體晶# U時，係將具端子(未騎)之面朝下(與 固疋樹脂層60接觸之面)配置。又，配置半導體晶片u時，為了 使在後述配線層形成步驟以良好精度形成配線層，必需精密酉^ 置。配置半導體晶#11之方法，不特舰定，可使用覆晶支座將 半導體晶片11精密地配置。 第3實施形態中，固定如此之半導體晶片u時，係於加執固 定樹脂層60的同時，對於半導體晶片u與支持基板5〇彼此^ *的方向加壓。 此時加熱溫度不特別限定，為100〜3〇〇°c較佳，12〇〜250¾尤 佳。又，前述加壓之程度為〇.01〜3Mpa較佳，〇 〇5〜2MPa尤佳。 再者’加熱及加壓時間為0.1〜1〇分鐘較佳、0.5〜5分鐘尤佳。藉由 使加熱及加壓條件為上述範圍，能夠達成確實固定半導體晶片n 及防止半導體晶片11之破損或變形兩者。 雖以如以上條件進行加熱及加壓，但是本實施形態中，如前 所述’係形成固定樹脂層60使其在200°C的黏度為i〇pa.s以上、 lOOOOPa · s以下。所以，即使以如上述條件隔著固定樹脂層6〇將 半導體晶片11固定在支持基板50上，還是能夠具有可確實抑制 或防止固定樹脂層60埋入(所謂的「晶片沉沒」）半導體晶片^的 厚度方向的程度之硬度(強度）。其結果，能以固定樹脂層6〇之厚 64 201233560 度大致維持均勻的狀態隔著固定樹脂層6〇將半導體晶片η固— 於支持基板50上。 疋 [4]其次’以密封材形成密封材層7〇，使被覆相 片11之間隙及半導體晶片零照圖称密封材層形成牛步導&日 在此’被覆半導體晶片11，包含完全被覆半導 ’ 部分半導體晶片11的情形兩者，但完全^ B曰片的，子裝置30的可靠性較良好，故為較佳。 一 第3實施形態、中，以密封材形成密封材層7〇之方 ^用壓縮成形法，以使得經固定之半導體晶片u不易發 ，用魏成形法時’係加触封材且同時對於魏 層^片11)與支持基板50彼此接近的方向加壓，以形成^封= 此=加熱密封材之溫度(成形溫度)，不Rsi5° ^ A Division I) The temperature is raised to 3 〇 to 3 以 at a rate of 10 /C (the side of rc is measured, and the displacement at this time is measured, so as to be a fixed resin having a viscosity as described above) In the layer 60, the method of forming the fixing resin layer 6 by the various materials such as the sizing agent and the antioxidant is not particularly limited, and for example, it is temporarily supplied by the #秘板50. After the fixing agent is heated, it can be easily dried by drying: , soil, and the temporary fixing agent is supplied to the supporting substrate 5 on the spin coating method, and n is applied from the coating/bare scale, and it is particularly preferable to apply the coating method. The smear coating method can easily obtain a more uniform and flat fixing resin layer 6 〇. When using the it coating method, the temporary fixing agent is used (25. 〇 is about ~ 〇〇 〇〇 s is preferable, and about 1000 to 50000 mPa is used. · S is better. Type), C) E-type viscometer (made by Toki Sangyo Co., Ltd., viscosity meter TVE_22) can be used as the measurement enthalpy without taking the cone temperature at 25 ° C for 3 minutes. Further, the rotation speed of the support substrate 5 for supplying the temporary fixing agent is set to about 63 201233560 300 to 4, preferably __, preferably set to about 5 (8) to 3, 5 (8). At this time, the adhesive layer 60 is formed into a film by satisfying the above conditions, and the average thickness of the resin layer 6 is about 50 to 1 bark. Further, the thickness of the fixing resin @ 6 〇 can be formed into a film with a more uniform thickness. Furthermore, when the viscosity of the temporary fixing agent is determined (25. 〇 is A [mPa · s], and the rotation speed of A ϊ 为 is B [rpm] is satisfied, the shape is preferably 13~330, 〇.5~ better soil ϋ 转 转 均匀 均匀 均匀 均匀 均匀 均匀 均匀 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ The semiconductor wafer n is fixed on the substrate 50 (see FIG. 2(c); electronic component fixing step). - Here, when the semiconductor crystal #U is disposed, the terminal (not riding) face down (with the solid state) When the semiconductor wafer u is placed, it is necessary to precisely form the wiring layer in order to form the wiring layer in a wiring layer forming step to be described later. The method of arranging the semiconductor crystal #11 is not specified. The semiconductor wafer 11 can be precisely arranged by using a flip chip holder. In the third embodiment, when the semiconductor wafer u is fixed, the semiconductor wafer u and the support substrate 5 are bonded to each other while the semiconductor wafer u is fixed. The direction of ^ is pressurized. The heating temperature at this time is not particularly limited, and is 100 to 3 〇〇 °c. Preferably, the degree of pressurization is preferably 〇.01~3Mpa, and preferably 〜5~2MPa. Further, the heating and pressurizing time is preferably 0.1 to 1 minute, It is preferable that the heating and pressurization conditions are in the above range, and it is possible to surely fix the semiconductor wafer n and prevent damage or deformation of the semiconductor wafer 11. Although heating and pressurization are performed under the above conditions, In the present embodiment, the fixing resin layer 60 is formed so that the viscosity at 200 ° C is i〇pa.s or more and 100 Pa·s or less. Therefore, even if the fixing resin layer 6 is interposed therebetween as described above. Further, when the semiconductor wafer 11 is fixed to the support substrate 50, it is possible to have a hardness (strength) which can surely suppress or prevent the fixing resin layer 60 from being buried (so-called "wafer sinking") in the thickness direction of the semiconductor wafer. The semiconductor wafer can be fixed to the support substrate 50 via the fixing resin layer 6 while maintaining the uniformity of the thickness of the fixing resin layer 6 201233560. 疋[4] Secondly, the sealing material layer is formed by the sealing material. 7〇, make The gap between the photo 11 and the semiconductor wafer is referred to as a seal layer to form a bobbin guide. Here, both the semiconductor wafer 11 is covered and the semi-conductive semiconductor wafer 11 is completely covered, but it is completely In the third embodiment, the sealing material layer 7 is formed by a sealing material by a compression molding method so that the fixed semiconductor wafer u is used. It is not easy to be used, and when the forming method is used, the pressure is applied to the support substrate 50 in a direction close to each other to form a seal = this = the temperature of the heat sealing material (forming temperature) ,Do not

0.5〜12MPa較佳，1〜i〇Mpa女、杜 a-i 丄、 疋 U 鐘較佳，i〜1〇分鐘尤30秒〜15分 態對ii封开 1成严密封材層70 ’會有因為於加熱狀 晶片η往與前皮覆的半導體 謂「晶片移位」）的問題。直之方向如方向)發生位置偏離(所 狀態點封材加壓時，固定樹脂層成編 在意C之黏度固定樹脂層60係形成為 麗，7〇與支持基板50彼此接近的方向加 確實防止半導I ϋ防^樹脂層6G成為炫融狀態，所以能 2 相對於橫方向之位置偏離。 密封材麟疋’但宜使賴體狀密珊。構成㈣材之 封材用納日組成物，例如較佳為使用以環氧樹脂、硬化劑、與 65 201233560 係數。 、導體a曰片11岔封，且同時較容易調整熱膨脹 之固制限定，可朗鮮丨實卿態使用 體晶電1^由^封材—層7_並使硬化，獲得酉己置有半導 硬化步驟）。 牛配置抢封材硬化物8〇 (參照圖2(d)，·密封材 5〇 封材硬化物⑽’係指設置在支持基板 隔以被;此等半導封體材ί片7〇的多成t半導體晶片u絲間 定為不定，就加熱溫度而言，設 置密紐^纽融的溫度顧。藉此，驗電子零件配 勿80^+形成以半導體晶.片11不生位置偏離之狀態 佳。又，、fr I，則述加熱溫度為100〜200t較佳，120〜190°c尤 ^30 ^ 声60八k γ/Γ恤度及加熱時間為上述範圍，能防止固定樹脂 層0刀解，同j可獲得高可靠性之電子裝置30。 物8〇1义照1述步驟[2]〜本步驟[5]之電子零件配置密封材硬化 前雖糊之固定細旨卿齡驟，使用前述 厚均句且表面平滑之具優異精度之固定樹脂 化物80的效果揮能形成具優異精度之電子零件配置密封材硬 物述步冑[2]〜本步驟[5]之電子零件配置密封材硬化 此時，冬二:^中’固定樹脂層60係受加熱，並經過溫度履歷。 射緩昭mi定樹脂層6〇之暫時固定劑係使用會因為活性能量 舰f熱分解温度降低者時，該等步驟中，儘管對於固定 熔G声H舌^能量射線照射，固定樹脂層60仍會維持在高 化物W^_° 能不發生密封材層70及電子零件配置密封材硬 /、支持基板50之間的剝離或不生半導體晶片11在支持基 66 201233560 板50上之位置偏離等而形成電子零件配置密封材硬化物8〇，故能 以優異的尺寸精度形成電子零件配置密封材硬化物8〇。 [6]其次，將固定樹脂層60加熱，如圖1(e)所示，使樹脂成分 熱分解並低分子化，藉此使炼融或氣化後，將電子零件配置密封 材硬化物80從支持基板50剥離(剝離步驟；參照圖。 第3實施形態中加熱固定樹脂層60之溫度，係設定在樹脂成 刀會熱分解之溫度且能防止電子零件配置密封材硬化物變質、 劣化之溫度。具體而言，較佳為設定在約Go〜28〇。〇，更佳為約 150〜250°C。本實施形態中’由於固定樹脂層所含之樹脂成分係以 上述材料構成，故本步驟之加熱溫度可設定在如上述較低的溫 度。因此，能減低對於電子零件配置密封材硬化物8〇之損傷，且 同日守確實防止在剝離時於半導體晶# n或密封材層7G發生龜裂 蓉石古指。 前述步 度更高 本步驟[6]之加熱溫度當然係設定為比起在前述步驟〜 驟[5]中用於形成電子零件配置密封材硬化物8〇之加熱溫 〇 在此，脱離，係指將電子零件配置密封材硬化物8〇 作無制定樹麟6㈣成_融狀態^ ^匕的If形’例如有以下方法:使電子零件配置密封材硬化物肋 „基板50之表面成垂直之方向脱離之方法、或使電子 更化物8G沿相對於支持基板5G之表面為水= 補之方法、或從電子零件配置密珊硬化物 月兄離之方法等。_ 、 浮起藉此使 娜經^前述加熱步驟使固定樹脂層60氣化時，由於固定 除去，故能更輕易使電子祕㈣if上物〇與支持基板％之間 脱離。錢職封材硬絲8G從鱗基板5〇 零件配置㈤崎魏物8G之表_柳_ =時1見電需子 67 201233560 要將殘存的固定樹脂層60洗滌。 ，即，將電子零件配置密封材硬化物⑽ 11之侧之面所前之固定樹脂層6Q 導體曰曰片 又，即使在電子零件配置密封材硬化物^=)除去。 層60附著時，由於在本實施形態中 ^表面有固定樹脂 構成，故能糊電«理、驗處理、.處日9 6^係為如上述 除殘澄。其結果可以更提高獲得之電子？置^方法献地去 小的⑼環㈣荷 6〇照射i性中’也可卩礙持基板5G對於固定樹脂層 ^此，當細旨成分伽為活性能量射_ 或於之=、及餘對暫咖定_射活性能量射線而產生酸 i以’若對於暫時固補(樹脂組成物)中所含之活 性劑產生如酸或驗之活性㈣，利用該活 質之作用’树知成分的熱分解溫度會降低。 昭射Ξί2=，ϊ層6G加熱之前，藉由對於固稍脂層6〇 f\線，能夠減低加熱岐樹脂層6()時之純溫度或 2等，故能以較溫和的條件進行該加熱。其結果，可 變質、、劣2或防止由於加熱電子零件配置密封材硬化物80導致的 線較i 之光 68 201233560 再者，活性能量射線之照射量不特別限定，約1 〇〜2〇〇〇〇mj/cm2 較佳，約20〜10000mj/cm2更佳。 又’當樹脂成分係使用碳酸酯構成單元具有至少2個環狀體 之聚碳酸酯樹脂時，如前所述，含有該樹脂成分之暫時固定劑會 成為因為加熱而熱分解並低分子化而熔融者，且成為由於活性能 量射線照射使熔融時之熔融黏度降低者。於此情形，對於固定樹 脂層60照射活性能量射線後於i8〇°C之熔融黏度成為 0·01 〜lOOPa · s 較佳。 若熔融黏度為該範圍内，用於使固定樹脂層60成為熔融狀態 之加熱溫度可設定為較低。具體而言，可將加熱溫度設定為約 130-200 C。因此，可以更為確實地抑制或防止由於該加熱導致半 導體晶片11及密封材層70變質、劣化，同時可以縮短用於使固 定樹脂層60成為熔融狀態所需花費的時間。 又，加熱時間不特別限定，但以30秒〜60分鐘較佳、1〜3〇分 鐘尤佳。藉由使加熱時間為上述範圍，可以確實使固定樹脂層6〇 熔融，且有效防止半導體晶片U及密封材層7〇熱劣化。 又’暫時固定劑於活性能量射線照射後於18(rc之熔融黏度為 0.01 100Pa s較佳，尤佳為約〇.1〜i〇pa · s ^藉此’能更顯著發 揮前述效果。 ，浓性此1射線照射剞於18〇。(：之熔融黏度不特別限定，為 約100〜lOOOOPa · s較佳，約1〇〇〜1〇〇〇Pa · s更佳藉此即使於 電子零件。配Ϊ㈣材硬錄8。軸賴目定概層⑼加熱到例 ^約180C，由於固定樹脂層6〇具有將半導體晶片u固定於支持 t板5〇^足夠強度，所以*電子零件配置密封材硬化物8。形成 時’成確實防止半體晶片以务生從支持基板5〇之位置偏離。 s再^、’當固定樹脂層60於活性能量射線照射前於18〇&lt;&gt;c之溶 ·幻’且固定樹脂層6〇於活性能量射線照射後於 80 C之熔融黏度定為B[Pa . s]時，越滿足1〇〇〜1〇〇〇〇之關係較 關係更佳。藉由使綿滿足該關係，當電子 零件配置松封材硬化物80形成時，可以藉由固定樹脂層6〇確實 69 201233560 地將半導體晶片11固定於支持基板5〇,當電子零件配置密封材硬 化物80從支持基板50脱離時，能輕易地使電子零件配置密封材 硬化物80從支持基板50脱離。 又，固定樹脂層60之熔融黏度可使用流變計法測定。 具體而言，可將暫時固定劑之溶液塗佈在矽基板上，並於熱 板上於120°C使進行300秒乾燥，將作為活性能量射線之來自於超 咼壓水銀燈之光線以波長365nm換算照射^OOOmJ/cm2後，將由 暫時固定劑構成之厚度50μπι之膜從矽基板剝離，並以流變計 (HaakeRS150 型、Thermo Fischer Scientific 公司製)測定熔融黏度 (間隔：30μιη、升溫速度：l〇°c/分、測定溫度範圍：3〇〜3〇〇。匸、 頻率..1Hz)，以於180°C之溶融黏度作為測定値而求得。 ，由經過如以上步驟，可獲得從支持基板5〇剝離之電子零件 配置密封材硬化物80。亦即，依照前述步师]〜[6]，構成本發明 之電子裝置之製造方法之第3實施形態。 [7〜18]步驟[6]結束後，經由步驟[7]至步驟[18]，可 „ 10。針對步驟[7]至步驟[18]，可進行與第i實施形態同、 樣的步驟，故省略在此説明。 《第4實施形態》 10之電子裝置封裝體之製造 其次’針對製造電子裝置封裝體 方法之第4實施形態加以説明。 以下轩裝麵賴1G之觀錢之第4實麵態，包含 固定樹脂層形成步驟，藉由以包合知赦 電子零件固定步驟，在該固定樹脂犀 使得彼此相鄰的電子料_成間^ 數電子零件 而將=述電子零件固銳前述支持相述固定樹脂層 欲封材層形成步為，以密封材姑义’ 定樹脂層及前述電子零件上使密電子零件，在前述固 201233560 硬化密#由加麵述_材使前述密封材 又付由剛述支持基材所支持且配置有烫 ，同時，藉由將前述_旨;加熱並 ，將_糊__硬化物從前 驟中該子ϋ封《1G之製造方法之固定樹脂層形成步 H 械於靴之減為1GPa · S以上、 ;==s 施 _方二= 法的不同點進行説明，關於同樣的事項省裝體10之k方 驟，係於進行密封材硬化步驟後實施剥離步 係實施同時實施密封材硬化步驟盘剝離 „化兼剝離步驟，除此以外與第3實施形態工通。 齡^卩’第4實施職侧時進行使密珊層7G硬化之密封材 零件配置密封材硬錄_離之剝ίϊϊ 封材硬化物8G彳歧縣板配置^ 步驟為該構成，能_時進行㈣_ ：；G之化 子零件配置密封材硬化物80之剝離。 史化興電 ^結果，能夠縮短電子裝置封裝體10之 生產性’且同時能低廉地製造電子裝置封I體1Q。㈤故4冋 此時，將密封材層70及固定樹脂層6〇 ::。較佳，，靴尤佳。又，加^ 時較佳，K6小時尤佳。藉由使加熱溫度及加， 為上述乾圍，可以確實進行密封材層7〇 照射後之固定樹脂層60之溶融。〈更化與活性此置射線 71 201233560 定樹脂層60所含之樹脂成分係會由於活性能量射照 跡’爲^解溫度降低者時，在本步驟之加熱之前，也可對於固定. μ照1丨活性能量射線。利用該構成，也可獲得與前述步驟 愛件同樣的絲，故能更為確實地抑制或防止由於電子 7件配置选封材硬化物80受加熱導致之變質、劣化。 能4 aa 7 ^針對本發日月之第3及第4實施形態依據圖示之實施形 法及電子裝置封裝體之製造方法，但 之本Ϊ明之電子裝置之製造方法及電子裝置封裝體 心孰。使驗成物所含之各構成獅，取代為能發揮 冋樣機i的任思者，或可附加任意構成者。 能的二Ϊ時，疋劑所含之各構成材料，可取代為能發揮同樣機 月匕的任思者，或可附加任意構成者。 造方^者·=子裝置之製造方法及電子裝置封裝體之製 / 也了視為要追加任意的步驟。 &lt;&lt;:第5實施形態》 以下依據圖式說明本發明之第5實施形態。 先參照圖5〜8，說明本實施形態之概要。 f施形態之半導體裝置之製造方法，包含以下步驟： 並隔層1配置於半導體晶圓2與基材3之間， 曰層1固定轉體晶圓2與基材3，並形成叠層體4. 將豐層體4之半導體晶圓2進行加工； 曰， 氣化將疊賴4加熱，並將熱分解性之樹脂層丨抑熱分解而使 分離半導體晶圓2與基材3。 將疊層體4加熱並使熱分解性之樹脂層） 步驟中，係藉由抽吸配置有疊層體4的衮哭 丁;：=解之則达 内之洛㈣㈤w r 的☆ 5中之氣體，使容器5 ^風圍成為減壓下，並於減壓下將前述#層體4進行加執。 針對本實郷態之轉體裝置之製造步驟詳細説明。 首先，如圖5(A)所示，準備基材3。 72 201233560 例如與半導體晶®2 A致為相同雜之擬似晶圓較佳， 土板、玻璃基板等構成。基材3可為與半導體晶圓2相 同大么：，但是也可比解導體晶圓2大-些。 旦後ί ’但當有需要對於熱分解性之樹脂層1照射活性能 里Α Α，基材3為活性能量射線可穿透之透明基材較佳。 如圖5(B)所示，在基材3上形成熱分解性之樹脂層i。 樹脂層丨，較料藉祕射雜能量射線而熱分解 胺曰系树脂、聚酿胺系樹脂1酿亞胺系樹脂、聚 :ί (甲基)丙稀_系樹脂構成的群組中1種以上之 由ί有該等樹脂成分，於光酸發生劑之存在下照 此里射線，此形成熱分解溫度降低之樹脂層1。 飧此、活性能量射線係指包含g線(436歷)、h線(405nm)、i 線'可__磁波、紐束之總稱，其中， 西匕、系樹脂不特別限定，例如選自於聚丙烯碳酸 二，石反酉夂酉曰、1,2_聚丁烯碳酸醋、l3-聚丁烯碳酸醋、1 4- α炭式2,3·聚丁稀她旨、反式2,3_聚丁烯碳酸醋、 /西:%=石ff旨、阶聚異丁烯碳酸醋、順式U-聚環丁烯碳 夂3 丁稀碳咖旨、順式以聚環丁烯碳酸醋、反式 I、聚新戊基碳咖旨、聚己婦碳義、聚環丙烯 ΐίϋίΐ =旨、聚(甲基環己烯碳酸醋）、聚(乙烯基 Γ編旨、聚六氫苯乙烯碳_旨、聚環己 = ^炭酸醋、聚(3·苯基丙獅旨)、聚(3_ j基魏基丙細姚目旨）、聚(3_甲基丙職氧基丙烯碳酸 王鼠丙，碳酸醋、、聚降莰烯礙酸醋當中1種或2種= 上之組合。 該等之巾’尤其’從可於級發生_在下更核果地 獅、聚伸環己基働、聚丁稀 %ι酸酯、聚新戊基碳酸酯為較佳。 前述聚酯系樹脂不特別限定，例如:以對苯二甲酸或對苯二甲 73 201233560 酸二曱酯為主要酸成分，並以從乙二醇、二乙二醇、三亞曱其二 醇、丁二醇選出的至少1種的烯烴二醇為主要二醇成的聚酉土旨樹 月j。亡述對苯二曱酸成分的-部分也可取代為料族、脂環族或 月曰肪^之一官能性羧酸成分。又，例如:將分子内同時具有羧酸成 分與醇基成分之羥基酸乳酸進行縮聚而得之聚乳酸。 尤其從能以活性能4射線照射有效果降低熱分解 =度且作業性優異的理由，料苯二憎丁二_、聚乳酸為較 佳0 聚醯胺系樹脂不特別限定，例如將選自於己二酸、庚烷二羧 酸、辛烷二羧酸、壬烷二羧酸、十一烷二羧酸、二二 至少1種之二羧酸成分、與選自於四亞甲基二 甲 i種的—胺成分進行縮聚反應而得到的聚醯胺樹脂。又， 例如使為舰胺的a_t各細、ε•己随胺、ω_月桂内醯胺、 ε-ena^olactam進行開環聚合而的聚醯胺樹脂。 心其’從能以活性能量射線照射有效果降低熱分 解μ度而且作業性優異的觀點，6,6_尼龍為較佳。 似聚樹f補職定，例如:將從鄰苯二胺、間苯二胺、 A甲:沪:·—胺基二苯驗、雙(胺基甲基)環己烧、1，3-雙(胺 ί二^飛二胺、^丁烧二胺、以戊二胺、1，6· 種:胺酸成分、與從4,六氟亞丙基雙鄰 3订加絲合反應而獲得之聚_胺樹脂。 解、、^而’從能以活性能量射線照射有效果降低熱分 ϊϋ佳。射優異的理由，聚(4,4，·氧基二伸絲苯均四酸亞 醇ί胺I酸醋系樹脂，不特別限定，例如將從乙二醇、二乙二 m、m、甘油、ui·三㈣基丙烧、似己三醇、 ，丁—醇、4,4_二經基苯基丙烧、4,4'_二經基苯基甲 74 201233560 ，里選出的至少1種多元醇、與從2,4_甲伸苯基 ^氰酸ΐ異她旨、對伸苯基二異_旨、異佛_ 加成聚^應而i得至少1種異氰酸醋進行 解溫埜’從能以活性能量射線照射有效果降低熱分 酸二較佳。業炎異的理由’聚((乙二醇&gt;ait_(4,4，-伸苯基)異氰 酸甲ί述((ϊί))ΞΞί，不特別制定，例如選自於(甲基)丙烯 旨、_丙麟正丙醋、（甲基)丙烯酸 酸系單體之&amp;物等基乙基(甲基)丙烯酸酯等之⑽丙烯 酸乙酉旨為較佳、的理由μ基丙烯酸曱酯、聚甲基丙婦 t述樹脂成分之重量平均分子量(㈣為_〇{_，〇〇_ 处赠二==，000尤佳。藉由使重量平均分子量為上述下限以上， 南巧基材3之透濕性之效果，再者可獲得提高成膜性 ，猎由為上述上限値以下，可獲得與各種成分之互溶 性或=於各種溶劑之溶解性、及熱分解性提高之效果。 前7脂成分較佳為以樹脂層丨之全量(排除溶劑、稀釋劑） 之1〇从重量％〜99重量％以下的比例掺合。更佳為摻合2〇查量％以 士。藉由使難成分之含量為上述下限似上，能防止樹脂層1 殘留=基材3，且同時，能在基材3上形成厚膜。 奸前述光酸發生劑不特別限定，例如肆(五氟苯基)硼酸根-4-曱基 苯基[4-(1-曱基乙基)苯基]鎭(Dpi_TpFpB)、參第三丁基苯基)鎏 肆(五氟苯基)硼酸鹽(TTBPS-TPFPB)、參(4··第三丁基苯基)鎏^氟 碟酸巧(TTBPS-HFP)、三苯基鎏三氟甲磺酸鹽(TPSJrf)、雙(4_第三 丁基苯基)錤三氟曱磺酸鹽(DTBPI-Tf)、三哄(TAZ-101)、三苯基鎏 六氟銻酸酯(TPS-103)、三苯基鎏雙(全氟曱炫續醯基)醯亞胺土 75 201233560 '雙(全Μ烧稿基)酿亞胺 - m楚-乂直^基基、參(全氣甲烧確酿基)曱基化物(Tps-ci)、 ===基本基)錢參(全氣甲烧雜基)曱基化物 (dtbpi:ci)、及該等2種以上之組合。 溫度中較有前述樹脂成分之熱分解 基)苯基卿财=)(鉢基)硼酸根_4_曱基频叫甲基乙 劑生ί ’較佳為以樹脂層1之全量(排除溶劑、稀釋 重量％的比iii〜。重量％的比例接合。更佳為以w重量％〜30 解由ίίΐ了限値以上’能安定地降低前述樹脂成分的熱分 ^度，融為上述上限値以下，能有效防止翻旨層丨殘留成為 平丁 脂層1的材料的組合，尤佳者為聚丙烯碳酸m 蝴戊基碳酸醋中任1種以上、與肆(五氟苯基) 夂ί :4:曱基本基[4-(1 -甲基乙基^«^PI-TPFPB)的組合。 ^述聚碳咖旨系樹脂，據認融於在前述級發生劑之存在 ^曰形成聚碳酸醋系樹脂之主鏈的熱切斷變得容易的構造、或 祕分解之刪構造(熱閉環反 閉％制顯示聚丙烯破酸酷樹脂之主鏈之熱切斷及熱 $ ’來自於前述活性劑之矿將聚丙烯碳酸酯樹脂之羰基氧 中且轉移到極性過渡狀態，產生不穩定的互變異構 其次，主鏈熱切斷時，中間體[Α]斷片化為丙酮及c〇2。 熱閉環構造形成(as b)時，中間體[B]生成碳酸伸丙醋，且碳 麩伸丙酯斷片化為co2及環氧丙烷。 76 2012335600.5~12MPa is better, 1~i〇Mpa female, Duai 丄, 疋U clock is better, i~1〇 minute, especially 30 seconds~15, and the ii seal is 1% tight seal layer 70' will be because The problem that the heated wafer η goes to the front-skinned semiconductor is called "wafer shift". When the direction of the sealing material is pressed, the fixing resin layer is formed into a viscous fixing resin layer 60, and the direction in which the supporting substrate 50 approaches each other is surely prevented. Since the conductive layer 6G is in a state of being melted, the position of the heat-reducing resin layer 6G is shifted from the position in the lateral direction. The sealing material is not suitable for the structure of the sealing material, but the composition of the sealing material for the (four) material is For example, it is preferable to use an epoxy resin, a hardener, a coefficient of 65 201233560, a conductor a crucible 11 , and at the same time, it is easier to adjust the solidification limit of thermal expansion, and it is possible to use the bulk crystal 1 ^ By ^ sealing material - layer 7_ and hardening, obtained 酉 has been semi-hardened step). The cow is configured to grab the hardened material of the sealing material 8〇 (refer to Fig. 2(d), · sealing material 5〇 sealing material hardened material (10)' is set to be placed on the support substrate to be separated; these semi-conductive sealing materials are 7〇 The thickness of the u-semiconductor wafer is determined to be indefinite. In terms of the heating temperature, the temperature of the nucleus is set. Thus, the electronic component is not formed by 80^+ to form a semiconductor crystal. The state is good. Also, fr I, the heating temperature is preferably 100 to 200 t, 120 to 190 ° c, especially 30 °, 60 k k γ / t-shirt degree and heating time are in the above range, and the fixing resin can be prevented. The layer 0 knife solution, the same j can obtain high reliability electronic device 30. The object 8 〇 1 义照1 described steps [2] ~ this step [5] electronic parts configuration sealing material hardened before the paste fixed fine When the age is the same, the effect of the fixed resin 80 having excellent precision on the surface of the above-mentioned thick average sentence is used to form an electronic component with a high precision. The sealing material is hard. [2] ~ The electron of this step [5] At the moment, the parts are sealed and the sealing material is hardened. In the winter: 2, the 'fixed resin layer 60 is heated and passes through the temperature history. The temporary fixing agent of the layer 6〇 is used because the thermal decomposition temperature of the active energy ship f is lowered. In these steps, although the fixed-melting G-acoustic H-ray energy radiation irradiation, the fixing resin layer 60 is maintained at the high compound. W^_° can form the electronic component configuration without causing the sealing material layer 70 and the electronic component arrangement sealing material hard/, the peeling between the supporting substrate 50, or the positional deviation of the semiconductor wafer 11 on the support substrate 66201233560 plate 50, etc. Since the sealing material is cured, it is possible to form the electronic component arrangement sealing material cured product 8 with excellent dimensional accuracy. [6] Next, the fixing resin layer 60 is heated, as shown in Fig. 1(e), the resin component is made hot. After the decomposition and the lowering of the molecular weight, the electronic component placement sealing material cured product 80 is peeled off from the support substrate 50 after the melting or vaporization (the peeling step; see the drawing. In the third embodiment, the temperature of the fixing resin layer 60 is heated, The temperature at which the resin is thermally decomposed is set and the temperature at which the cured material of the sealing member is deteriorated or deteriorated can be prevented. Specifically, it is preferably set at about Go to 28 〇, more preferably about 150 〜. 250 ° C. In the present embodiment, the resin component contained in the fixing resin layer is made of the above-mentioned material. Therefore, the heating temperature in this step can be set to a temperature lower than the above. Therefore, it is possible to reduce the sealing material cured material for the electronic component. The damage, and the same day, does prevent the cracking of the stone in the semiconductor crystal or the sealing layer 7G at the time of peeling. The above step is higher. The heating temperature of this step [6] is of course set to be compared with the above. Step ~ Step [5] used to form the electronic parts to configure the sealing material hardened material 8 〇 heating temperature 〇 here, detachment, refers to the electronic parts configuration sealing material hardened material 8 无 制定 树 麟 6 6 (4) into The state "^" of the state ^ ^ is, for example, a method of disengaging the surface of the sealing member hardened material rib „the substrate 50 in the vertical direction, or causing the electron rectifying 8G to face the surface relative to the supporting substrate 5G For the water = make up method, or from the electronic parts, the method of disposing the densely-cured material. When the heating resin layer 60 is vaporized by the above-described heating step, it is removed by fixation, so that it is easier to separate the electronic object from the support substrate. Money seal material hard wire 8G from the scale substrate 5 零件 Parts configuration (5) Saki Wei 8G table _ Liu _ = 1 see electricity demand 67 201233560 The remaining fixed resin layer 60 should be washed. In other words, the electronic component is placed on the side of the side of the side of the sealing material cured material (10) 11 to fix the resin layer 6Q, and the conductive piece is removed even in the electronic component arrangement sealing material. When the layer 60 is attached, since the surface of the present embodiment has a fixed resin structure, it is possible to paste the electricity, and the surface is removed as described above. Can the result increase the number of electrons obtained? The method of deliberately dedicating to the small (9) ring (four) loading 6 〇 irradiation i in the 'can also hinder the holding of the substrate 5G for the fixed resin layer ^, when the fine component gamma is the active energy shot _ or =, and Producing an acid i for the active energy ray to generate an acid or test activity for the active agent contained in the temporary solidification (resin composition), and using the action of the active material The thermal decomposition temperature will decrease.昭射Ξί2=, before the enamel layer 6G is heated, by using the 6〇f\ line for the solid fat layer, the pure temperature or 2 when the ruthenium resin layer 6() is heated can be reduced, so that the condition can be performed under mild conditions. heating. As a result, the quality of the active light ray is not particularly limited, and the amount of the active energy ray is not particularly limited, and is about 1 〇 〇〇 2 〇〇 可变 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 Preferably, 〇〇mj/cm2 is more preferably about 20 to 10000 mj/cm2. Further, when the resin component is a polycarbonate resin having at least two annular bodies in a carbonate constituent unit, as described above, the temporary fixing agent containing the resin component is thermally decomposed and lowered in molecular weight by heating. In the case of melting, the melt viscosity at the time of melting is lowered by the irradiation of active energy rays. In this case, it is preferred that the fixed viscosity of the fixed resin layer 60 after irradiation with an active energy ray at i8 ° C is 0·01 〜 lOOPa · s. When the melt viscosity is within this range, the heating temperature for bringing the fixing resin layer 60 into a molten state can be set to be low. Specifically, the heating temperature can be set to about 130 to 200 C. Therefore, it is possible to more reliably suppress or prevent deterioration and deterioration of the semiconductor wafer 11 and the sealing material layer 70 due to the heating, and it is possible to shorten the time required for the fixing resin layer 60 to be in a molten state. Further, the heating time is not particularly limited, but it is preferably from 30 seconds to 60 minutes, more preferably from 1 to 3 minutes. By setting the heating time to the above range, the fixing resin layer 6 can be surely melted, and the semiconductor wafer U and the sealing material layer 7 can be effectively prevented from being thermally deteriorated. Further, the temporary fixative is preferably used at 18 (the melt viscosity of rc is 0.01 100 Pa s, and particularly preferably about 1.1~i〇pa · s ^^), which can more significantly exert the aforementioned effects. The concentration of the 1 ray is 〇 18 〇. (The melt viscosity is not particularly limited, and is preferably about 100 to 100 Pa s s. Preferably, about 1 〇〇 1 〇〇〇 Pa · s is better, even in electronic parts. With the Ϊ (4) material hard recording 8. The axis is fixed to the layer (9) heated to the example ^ about 180C, because the fixing resin layer 6 〇 has the semiconductor wafer u fixed to the support t plate 5 〇 ^ sufficient strength, so * electronic parts configuration seal The material hardened material 8. When formed, it is sure to prevent the half-body wafer from being deviated from the position of the support substrate 5 。. s, 'When the fixing resin layer 60 is before the active energy ray irradiation, 18 〇&lt;&gt; When the melt viscosity of the fixed resin layer 6 at the 80 C after the active energy ray irradiation is set to B [Pa . s], the relationship between the 1 〇〇 and 1 〇〇〇〇 is better. By making the cotton satisfy the relationship, when the electronic component is disposed, the hardened material 80 is formed, by fixing the resin When the electronic component arrangement sealing material cured material 80 is detached from the support substrate 50, the electronic component can be easily disposed from the support substrate. Further, the melt viscosity of the fixing resin layer 60 can be measured by a rheometer method. Specifically, a solution of a temporary fixing agent can be applied onto a crucible substrate and allowed to be carried out on a hot plate at 120 ° C. After drying for 300 seconds, the light from the super-pressure mercury lamp as the active energy ray was irradiated at 270 nm in a wavelength of 365 nm, and then a film having a thickness of 50 μm composed of a temporary fixing agent was peeled off from the ruthenium substrate, and a rheometer was used ( Haake RS150, manufactured by Thermo Fischer Scientific Co., Ltd.) Measurement of melt viscosity (interval: 30 μm, temperature increase rate: l〇°c/min, measurement temperature range: 3 〇 to 3 〇〇. 匸, frequency: 1 Hz), for 180° The melt viscosity of C is determined by measuring the enthalpy. The electronic component is disposed from the support substrate 5 配置 by the above steps, and the sealing material cured product 80 is obtained. That is, according to the above-mentioned steps]~[6], A third embodiment of the method for manufacturing an electronic device according to the present invention. [7 to 18] After the step [6] is completed, the step [7] to the step [18] can be performed. 10. For the step [7] to the step [18] The same steps as those of the i-th embodiment can be performed, and thus the description thereof will be omitted. "Fourth Embodiment" The manufacture of the electronic device package of the second embodiment is followed by the fourth embodiment of the method for manufacturing an electronic device package. The following 4th solid state of the 1X view of the money, including the step of forming a fixed resin layer, by the step of fixing the electronic parts of the electronic component, the electronic resin adjacent to each other in the fixed resin rhinoceros_ In the case of a plurality of electronic components, the electronic component is fixed, and the fixed resin layer is required to be formed into a sealing layer, and the sealing material is used to define a resin layer and the electronic component is made on the electronic component.固 201233560 硬密密# By adding the surface _ material, the sealing material is further supported by the support substrate and is arranged to be hot, and at the same time, by heating the above, the _ paste __ hardened material is in the past In the middle of the process, the seal of the 1G manufacturing method The resin layer forming step is reduced to 1 GPa · S or more, and the == s _ square 2 = different points of the method, and the same thing is applied to the sealing element 10 After the hardening step, the peeling step is carried out while the sealing material hardening step is performed, and the disk peeling and the peeling step are carried out, and the third embodiment is used. When the 4th aspect of the work is carried out, the sealing material parts of the dense layer 7G are hardened. _ 脱 脱 ϊϊ ϊϊ 封 硬化 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 8 The peeling of the cured material 80 of the sealing material is carried out in (4) _:; G. As a result, it is possible to shorten the productivity of the electronic device package 10 and at the same time to inexpensively manufacture the electronic device package 1Q. (5) Therefore, at this time, the sealing material layer 70 and the fixing resin layer 6〇:. Preferably, the boots are especially good. Also, it is better to add ^, especially K6 hours. By heating the temperature and adding the dry circumference, it is possible to surely melt the fixing resin layer 60 after the sealing material layer 7 is irradiated. <Regification and activity of the radiation 71 201233560 The resin component contained in the fixed resin layer 60 is due to the active energy radiation trace', when the temperature is lowered, before the heating in this step, it can also be fixed. 1 丨 active energy ray. According to this configuration, it is possible to obtain the same yarn as the above-described step, and it is possible to more reliably suppress or prevent deterioration and deterioration due to heating of the seal member cured material 80 by the electronic component. 4 aa 7 ^ The third embodiment and the fourth embodiment of the present invention are based on the illustrated embodiment and the method of manufacturing the electronic device package, but the electronic device manufacturing method and the electronic device package body of the present invention what. The lions included in the test object are replaced by those who can use the swatch machine i, or any member can be attached. In the case of a second sputum, the constituent materials contained in the elixirs may be replaced by those who can perform the same machine, or may be attached with any constituents. The manufacturing method of the makers and the sub-devices and the manufacture of the electronic device package are also considered to be arbitrary steps. &lt;&lt;: Fifth Embodiment&gt; Hereinafter, a fifth embodiment of the present invention will be described based on the drawings. An outline of this embodiment will be described with reference to Figs. 5 to 8 . The manufacturing method of the semiconductor device according to the embodiment includes the following steps: The spacer 1 is disposed between the semiconductor wafer 2 and the substrate 3, and the germanium layer 1 fixes the rotating wafer 2 and the substrate 3, and forms a laminate. 4. The semiconductor wafer 2 of the layered body 4 is processed; 曰, gasification heats the stack 4, and the thermally decomposable resin layer is thermally decomposed to separate the semiconductor wafer 2 from the substrate 3. In the step of heating the laminate 4 to thermally decompose the resin layer), the laminate 4 is placed by suction; in the case of the solution, the inside of the laminate 4 is in the middle of the ☆ 5 The gas was subjected to a reduced pressure in the container 5, and the above-mentioned #layer 4 was subjected to a reduction under reduced pressure. The manufacturing steps of the swivel device for this embodiment are described in detail. First, as shown in FIG. 5(A), the substrate 3 is prepared. 72 201233560 For example, a semiconductor wafer, a glass substrate, or the like is preferably the same as the semiconductor wafer 2A. The substrate 3 can be as large as the semiconductor wafer 2: but it can be larger than the conductor wafer 2. </ RTI> </ RTI> However, when it is necessary to irradiate the thermally decomposable resin layer 1 with an active energy, the substrate 3 is preferably a transparent substrate which is permeable to active energy rays. As shown in FIG. 5(B), a thermally decomposable resin layer i is formed on the substrate 3. The resin layer is a group of the thermal decomposition of an amine-based resin, a polyamine-based resin, an ammine-based resin, and a poly(methyl) propylene-based resin. According to the above, the resin component is formed in the presence of a photoacid generator in the presence of a photo-acid generator, thereby forming a resin layer 1 having a reduced thermal decomposition temperature. Here, the active energy ray is a general term for the g-ray (436 calendar), the h-line (405 nm), the i-line 'can be __magnetic wave, and the bundle, and the ruthenium resin is not particularly limited, and is, for example, selected from Polypropylene carbonate, stone ruthenium, 1,2_polybutene carbonate, l3-polybutene carbonate, 1 4-α carbon 2,3·polybutan, her, trans 2, 3_ polybutene carbonate, / West: % = stone ff, polyisobutylene carbonate, cis U-polycyclobutene carbon 3 butyl carbon, cis, polycyclobutene carbonate, Trans I, poly-p-pentyl carbonaceous, poly-methane, polycyclopropene, poly(methylcyclohexene carbonate), poly(vinyl anthracene, polyhexahydrostyrene carbon) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ C, carbonated vinegar, polypyrene, one or two of the acid vinegar = combination of the above. These towels are 'especially' from the level of _ in the next more nuclear lion, poly-cyclohexyl hydrazine, poly Preferably, butyl dimethacrylate and poly neopentyl carbonate are preferred. Specifically, for example, terephthalic acid or terephthalic acid 73 201233560 dinonyl ester is the main acid component, and at least selected from ethylene glycol, diethylene glycol, triterpene diol, and butylene glycol. One type of olefin diol is a polyglycol formed by a main diol. The part of the terephthalic acid component may also be substituted with a functional group, an alicyclic group or a oligosaccharide. Further, for example, a polylactic acid obtained by polycondensing a hydroxy acid lactic acid having a carboxylic acid component and an alcohol-based component in a molecule, in particular, it is effective to reduce thermal decomposition by an activity of 4 rays. The reason for the excellent property is that the benzoic acid bismuth and the polylactic acid are preferably 0. The polyamine amine resin is not particularly limited, and for example, it is selected from adipic acid, heptane dicarboxylic acid, octane dicarboxylic acid, and hydrazine. A polydecylamine resin obtained by polycondensation reaction of an alkanedicarboxylic acid, undecanedicarboxylic acid, at least one dicarboxylic acid component, and an amine component selected from the group consisting of tetramethylene dimethicone. Further, for example, the a_t of the naphthamine is fine, ε• has been opened with the amine, ω_lauric acid, ε-ena^olactam Polymerized polyamine resin. From the viewpoint that it can reduce the thermal decomposition μ degree by the action of active energy ray irradiation, and it is excellent in workability, 6,6-nylon is preferable. From o-phenylenediamine, m-phenylenediamine, A:H:--aminobiphenyl, bis(aminomethyl)cyclohexane, 1,3-bis(amine ί2) ^ Dibutylamine, pentanediamine, 1,6 species: aminic acid component, and a poly-amine resin obtained by a silk-bonding reaction from 4, hexafluoropropylene bis-o-3. Solution, ^ And 'from the reason that the active energy ray irradiation has the effect of lowering the heat distribution, and the shot is excellent. The poly(4,4,·oxydi-extended silk benzene tetrasanoic acid melamine I acid vinegar resin is not special) Qualified, for example, from ethylene glycol, diethylene glycol, m, glycerol, ui, tris(tetra)propylpropene, hexanetriol, butanol, 4,4-diphenylthiopropanone, 4, 4'_dipyridylphenyl group 74 201233560, selected at least one kind of polyol, and from 2,4_methylphenylene thiocyanate, the opposite of the phenyl group, the phenyl group _ Addition of poly ^ should and at least 1 isocyanate vinegar to solve the warmth of the field Effective energy ray irradiation to reduce thermally preferred acid. The reason for inflammatory is 'poly((glycol>ait_(4,4,-phenylene)isocyanate) ((ϊί)) ΞΞί, not specifically formulated, for example, selected from (methyl) (10) Acrylic acid, such as propylene, _ propyl propyl vinegar, (meth) acrylic acid monomer, etc. (10) Acrylic acid is preferred. The weight average molecular weight of the resin component of the polymethyl propyl group ((4) is _〇{_, 〇〇_ is given by two ==,000. Especially by making the weight average molecular weight above the above lower limit, Nanqiao substrate In addition, the effect of the moisture permeability of 3 can be improved, and the film forming property can be improved, and the above-mentioned upper limit 値 is obtained, and the mutual solubility with various components, the solubility in various solvents, and the thermal decomposition property can be improved. The first 7-fat component is preferably blended in a ratio of from 1% by weight to 99% by weight based on the total amount of the resin layer (excluding the solvent and the diluent). More preferably, the amount of the mixture is 2%. When the content of the hard component is the above lower limit, it is possible to prevent the resin layer 1 from remaining = the substrate 3, and at the same time, a thick film can be formed on the substrate 3. The acid generator is not particularly limited, and for example, ruthenium (pentafluorophenyl) borate-4-mercaptophenyl [4-(1-indolyl)phenyl]anthracene (Dpi_TpFpB), stilbene butylphenyl鎏肆(pentafluorophenyl)borate (TTBPS-TPFPB), ginseng (4··t-butylphenyl) 鎏^Fluoric acid (TTBPS-HFP), triphenylsulfonium trifluoromethanesulfonic acid Salt (TPSJrf), bis(4_t-butylphenyl)phosphonium trifluorosulfonate (DTBPI-Tf), triterpenoid (TAZ-101), triphenylsulfonium hexafluoroantimonate (TPS-103) ), triphenyl bismuth (perfluoro fluorene 醯 醯 醯 醯 醯 75 75 75 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012酿 曱 曱 曱 曱 曱 T T T ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The thermal decomposition group of the above resin component) phenyl qing   钵 钵 ) ) ) _ _ _ _ _ _ 甲基 甲基 甲基 甲基 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳The ratio of % is iii~.% by weight. More preferably, it is w% by weight to 30%. 解 ΐ 値 値 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' It is a combination of the above-mentioned upper limit ,, which can effectively prevent the residue of the layer of the butyl butyl sulphate layer 1 or more, and is preferably one or more of the polypropylene carbonated m-pentyl carbonate vinegar. Fluorophenyl) 夂ί : 4: a combination of the basic group [4-(1-methylethyl^«^PI-TPFPB). ^ Polycarbonate resin, which is believed to be in the above-mentioned grade generator The structure in which the thermal cut of the main chain of the polycarbonate resin is easily formed or the structure of the secret decomposition is eliminated (the heat-closed closed-loop % system shows the thermal cut-off and heat of the main chain of the polypropylene acid-breaking resin) $ 'The ore from the above active agent will transfer to the polar transition state of the carbonyl oxygen of the polypropylene carbonate resin, resulting in unstable tautomerism. Secondly, when the main chain is thermally cut, the intermediate [Α] is fragmented into acetone. And c〇2. When the thermal closed-loop structure is formed (as b), the intermediate [B] forms a carbonic acid propylene vinegar, and the carbon gluten propyl ester is fragmented into co2 and propylene oxide. 76 201233560

又’前述樹脂層1也可含有抗氧化劑。前述抗氧化劑具有防 止不理想的酸發生、或防止樹脂組成物自然氧化的機能。 釗述抗氧化劑不特別限定，例如使用Ciba Fine Chemicals公 司製、「CibaIRGANOX(註冊商標）1076」及「CibaIRGAF〇s(註 冊商標）168」為理想。 . 又，其他抗氧化劑，例如可使用「cibaIrgan〇x 129」、rCibaFurther, the resin layer 1 may contain an antioxidant. The aforementioned antioxidant has a function of preventing undesired acid generation or preventing natural oxidation of the resin composition. The antioxidant is not particularly limited. For example, it is preferably CibaIRGANOX (registered trademark) 1076 and "CibaIRGAF〇s (registered trademark) 168" manufactured by Ciba Fine Chemicals Co., Ltd. Also, for other antioxidants, for example, "cibaIrgan〇x 129", rCiba can be used.

Irganox 1330」、「Cibalrganox 1〇1〇」、「CibaCyanox(註冊商標） 1790丄 Ciba Irganox 3114」、「Qba Irganox 3125」等。 o 1 氧化劑之含量，相對於前述樹脂成分觸重量份，為 0.1〜10重罝份較佳，0.5〜5重量份更佳。 酮车又ϋ Ϊ述層1視需要也可含有酸捕捉劑、丙烯酸系、矽 等了 IU、乙烯基轉塗平劑、魏偶聯劑、稀釋劑等添加劑 氧基恨定’例如:3_環氧丙氧基丙基三甲 ▲丙基甲基一乙氧基石夕燒、環氧丙氧基丙 77 201233560 基二乙^基石夕烷、對苯乙烯基三曱氧基石夕烷、3_曱基丙烯醯氧基丙 基曱基二曱氧基矽烷、3_曱基丙烯醯氧基丙基三曱氧基石夕烷、3_ 曱^丙烯輒基丙基技二乙氧基魏、基丙_氧基丙基三 乙，基石規、3-丙烯醯氧基丙基三甲氧基石夕烧、N_2_(月安基乙基)_3_ ^丙基曱基二曱氧取規、Ν·2領基乙基&gt;3•絲丙基三甲氧基 石=、Ν-2-(胺基乙基)_3_胺基丙基三乙氧基魏、3•絲丙基三甲 =3烧、3·胺基丙基三乙氧基魏、Ν_苯基领基丙基三甲氧 i ί/祕丙基曱基二曱氧基魏、㈣基丙基三甲氧基石夕 Ϊ二:Γ乙氧基丙基)四硫鍵、3-異象酸酉旨丙基三乙氧基石夕烧等， 可單獨使用也可混合使用2種以上。 1 含有魏偶糊，可提高與半導體晶圓2 或基材3間的密合性。 也不^降可”照射活性能量射線其熱分解溫度 者例也可含有降莰烯系樹脂。 單元者^ ♦'樹脂不特別限定，例如含有以下列(1Υ)表示之構造Irganox 1330", "Cibalrganox 1〇1〇", "CibaCyanox (registered trademark) 1790丄 Ciba Irganox 3114", "Qba Irganox 3125", etc. The content of the oxidizing agent is preferably 0.1 to 10 parts by weight, more preferably 0.5 to 5 parts by weight, based on the parts by weight of the resin component. Ketone car ϋ Ϊ layer 1 can also contain acid scavenger, acrylic, hydrazine and other additives such as IU, vinyl transfer coating agent, Wei coupling agent, thinner, etc. Propoxypropyltrimethyl ▲ propylmethyl-ethoxy ethoxylate, glycidoxypropyl 77 201233560 bis-diyl-based sulfanyl, p-styryl-trimethoxy oxetane, 3-mercaptopropene醯 曱 曱 曱 曱 曱 曱 、 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 、 、 、 、 、 、 、 、 、 、 、 、 Propyltriethyl, sulphate, 3-propenyloxypropyltrimethoxy sulphide, N_2_(yenylethyl)_3_^propylindenyl dioxime, Ν·2 collarylethyl ; 3 • mercaptotrimethoxy stone =, Ν-2-(aminoethyl)_3_aminopropyl triethoxy Wei, 3 • propyl propyl trimethoxide = 3 burning, 3 · aminopropyl three Ethoxy wei, Ν phenyl propyl propyl trimethoxy i ί / propyl propyl decyl di methoxy Wei, (tetra) propyl trimethoxy oxa oxime: Γ ethoxy propyl) tetrasulfide bond , 3- viscous acid, propyl triethoxy stone, etc., can be used alone May be used in combination of two or more thereof. 1 Contains a Wei-bake paste to improve adhesion to the semiconductor wafer 2 or the substrate 3. In addition, the heat-decomposing temperature of the active energy ray may be contained in the case of the heat-decomposing temperature. The unit may be a resin. The resin is not particularly limited, and includes, for example, a structure represented by the following (1Υ).

R1 R2 R3 R4 1 Υ) 基、工m，t〜R各為氫、直鏈狀或分支狀之碳數1〜2。之炫 R6 n Si— R8 式(2Y)中，圮為氫 R5 (CH) R7 (2 Y) 式(2Y)中，# 直鏈狀或分支狀hlf*:甲基或乙基中任—者，r6、R7及R8各i 厌數1〜20之烷基、直鏈狀或分支狀之碳數1〜2 78 201233560 ίϊίί' ί錄4分支狀之4數1〜2G找聽基氧基、直鏈狀 二!!·#甘1碳數1〜20之烷基過氧基、取代或未取代之碳數6〜20 之方ί基中任一者。又，n為0〜5之整數。 前，，狀或分支狀之魏1〜20之絲，限定，例如 基J 基、丙基、丁基、戊基、己基、庚基'辛基、壬基、癸 ^為與構鑛脂層1之各種成分間的互雜或 錄半賴純2與紐3固定時之 前，芳香族基，不特別限定，例如苯基、苯乙基、蔡基等， i、佳為將半導體晶圓與紐固定時之機械物性優異的苯乙 環五己基、降雜、二氫二 ί =、乙乂四環十二基、亞乙基四環十二基、苯基 基士基之三元體等脂環族基等。 性、：if:牛S佳;將半導體晶圓與基材暫時固定時之機械物 熱分解5性優異的環己基、賴烯基。 特別=ίί ’只要是氫、或甲基或乙基即可，不 加熱步6驟之熱分解性優異的氫原子。 數1〜2〇1烷基、直直鏈狀或分支狀之碳 或分―a支狀之破1〜2G之烧氧基、直鏈狀 !，之炫基過氧基、取之或 =:數 即可，不特別限定。 数20之方虱基中任一者 如此的取代基，例如：甲負其、 氧基、乙醯氧基、丙醯氧美、/、丙氧基、丁氧基、戊 ❻基、乙氧基、丙氧i。+導體晶®加1時之機械特性優異的 79 201233560 ，述通式(1Y)中之m為〇〜4之整數’不特別限定’但以〇或 1為較佳。m為0或1時，以前述通式(1γ)表示之構造單元，可以 用下列(3Υ)或(4Υ)表示。 S4(3Y) R R2 R3 R4R1 R2 R3 R4 1 Υ) The base, the work m, and the t to R are each hydrogen, a linear or branched carbon number of 1 to 2.炫 R6 n Si— R8 In the formula (2Y), 圮 is hydrogen R5 (CH) R7 (2 Y) where (2Y), #linear or branched hlf*: methyl or ethyl , r6, R7, and R8 each i have an alkyl group of 1 to 20, a linear or branched carbon number of 1 to 2 78 201233560 ίϊίί' ί recorded 4 branches of 4 number 1 to 2G to find the base oxygen, Linear ones!!·# 甘1 Any of the alkyl groups having a carbon number of 1 to 20, a substituted or unsubstituted carbon number of 6 to 20. Further, n is an integer of 0 to 5. Pre-, or branched, filaments of filaments 1 to 20, defined, for example, radicals J, propyl, butyl, pentyl, hexyl, heptyl 'octyl, decyl, hydrazine Before the fixation of the various components of 1 or the combination of pure 2 and New 3, the aromatic group is not particularly limited, such as phenyl, phenethyl, and zeoli, etc., i, the semiconductor wafer and Benzene ring pentahexyl group, impurity reduction, dihydro ruthenium = ethene tetracyclododecyl group, ethylene tetracyclododecyl group, phenyl ketone group ternary body, etc. An alicyclic group or the like. Properties: if: Niu S is good; the mechanical substance when the semiconductor wafer and the substrate are temporarily fixed are thermally decomposed into cyclohexyl or lysine having excellent five properties. In particular, it is a hydrogen atom, a methyl group or an ethyl group, and the hydrogen atom having excellent thermal decomposition property in the step 6 is not heated. a number of 1 to 2 〇 1 alkyl, straight chain or branched carbon or sub-a branch of 1 to 2G of alkoxy, linear!, dadyl peroxy, or = : The number can be, and is not particularly limited. a substituent of any one of the decyl groups of 20, for example, an anthracene, an oxy group, an ethoxy group, a propionyloxy group, a peroxy group, a butoxy group, a pentyl group, an ethoxy group, Propoxy i. + Conductive crystal® is excellent in mechanical properties when added to one. 79 201233560, wherein m in the general formula (1Y) is an integer of 〇~4, and is not particularly limited, but 〇 or 1 is preferable. When m is 0 or 1, the structural unit represented by the above formula (1γ) can be represented by the following (3Υ) or (4Υ). S4(3Y) R R2 R3 R4

R1 R2 R3 R4 (4 Y) 各為氫、麵狀或分支狀之碳类 任一者。凡土方矢土、脂環族基、環氧丙鱗基、取代基㈣中 前述取代基(2Y)中之11為〇〜5整 為〇較佳。η為0時，矽基侍介由e 雖不特別限疋，但η 能兼顧樹脂層i之熱分解性^半由導^而^多環式環直接鍵結 稀、5-甲基降乙^;=別限定，例如可將降莰 壬基降莰烯、5-癸基降莰烯 二烯、5-辛基降莰烯、5_ =、5-三尹基石夕基射 5-三乙氧基石夕基降 氧基矽基降获烯、5_二甲基矽基降莰烯、5-甲基二甲 稀等__單體予吻合!^降赠、5•環柄氧基甲基降^ 人=述_烯系單體聚合時 201233560 將：基體:烯2 時之機械物性優異的5-丁基 5^丙氧基烯、&amp;三乙氧基雜婦、 示之二不，限^ ’可以由^前述通式(1Υ)表 _降莰烯系樹月ί，更且元形成。 莰烯、聚己基降^、f 1基降_、聚戊基降 聚—ί:、=基：降 環氧丙氧基甲基降^，稀_ 環氧丙氧基；ϊ:共乙聚氧物基 稀共聚物、癸基嫌_ 丁其㈣1基巧席♦氧丙氧基甲基降« 基降获婦共聚物等i£聚物二产基降获蝉·環氧丙氧基甲 -乙氧基石夕基降^共::物*氧丙氧基甲基降获稀-丁基較烯- 性優基材3固定時之機械物 聚環氧丙氧基甲基降^；基基降^^?=氧基石夕基降获稀、 =降·丁基降“v二基:氧基基降以聚 佳，子量為斷卿00較 r-1 在此，重量料分子量可依_咖作躲狀GPC(凝膠 81 201233560 渗透層析）’計算作騎苯乙_算値。 觸媒、自由基缺解^ 觸媒、含麵之觸媒、含1白之 優異的含騎巾’伽在加歧合時之反應性 溶劑，’可於能溶解降茨婦系單體之有機 不特別限定，例如:戊烧、己烧、庚烧、 硝基苯:ΐ苯二甲1等=;環己烷等脂環族烴;苯、氯苯、 2_氯丙烧、i-氣丁烧、2_氣丁烧、曱上 = 的_化(極性)烴。 I 2甲基丙说、1-氣戍烧之類 woirl之觸媒相對於前述降获稀系單體之莫耳比，為20 : 又爭^ .^^^0.^20,000:^1 1,000:140,000:1 又吏佳。 降《齡單體以鎳觸媒聚合時，其聚合溫度為-i〇〇°c〜 120Cj交佳’曹c〜9〇。〇尤佳，_1(rc〜8〇t：又更佳。 夕攻稀系樹脂’以樹脂層1之全量(排除溶劑、稀釋劑） •、…“置％〜100重量％的比例摻合較佳。更佳為，以20重量％ 以上彳參合。 於樹脂層1時，可以預先將樹脂層1成形為膜狀，並貼合 二:产本實施形態中’從確保樹脂層1的平坦性的觀點，係 “1。猎由旋'塗塗佈含有樹脂層1之各成*的清漆(樹脂組成物) 並使乾無，藉此形成樹脂層1。 〜，此，成為樹脂層i之清漆，除了上述各成分以外，也可含 有〉谷劑或稀釋劑。 、陆猫'谷!1丨不特別限疋，例如:米、十氫萘、礦精(mineral印丨也)類等 、二' 本曱峻、丙二醇單曱_、二丙二醇曱醚、二乙二醇單乙醚、 二甘二甲醚等醇/醚類、碳酸伸乙酯、乙酸乙酯、乙酸正丁酯、乳 酉欠乙SB、3-乙氧基丙酸乙酯、丙二醇單曱醚乙酸酯、二乙二醇單乙 82 201233560 二 =旨、γ_丁内_内_，戊 、 py^hf)麵胺，内醯胺類。前述清漆藉 ^ 調整清漆之黏度，容易形成薄膜。 有合J犯办易 5 料制蚊，触騎馳祕之全量之 h 神麻定，如:魏環谈祕e) S=:i知樣、M-環己炫二甲醇二乙_等環狀脂肪 樹脂=2==:能提高清漆之流動性，且能提高 3 _其次所示，隔著樹脂層1將半導細2與基材 先开=層it有黏著性，係安裝在半導體晶圓2之元件形成面(預 形i面。兀牛的面。亚且，藉由基材3保護半導體晶圓2的元件 的背ii將^^體4放置在未圖示的研磨裝置，研磨半導體晶圓2 sCrf牛械面為相反側的面）。藉此，如圖6⑻所示，使半 日日圓2之厚度成為例如50μτη以下、ΙΟμηι以上。 或於t對於半導體晶® 2的背面叙加卫並形成凸塊等電極、 戈於+導體晶® 2形成貫通孔。 編二丄於該半。導體晶® 2之背面之加卫步驟，係將疊層體4加 &amp;曰鬥）約300C，但是在該熱之下，樹脂層1不易熱分解，半導 體曰曰回2不會從基材3剝離。 寸 降似ΐί ’當樹脂層1係使用會由於活性能量射線而熱分解溫度 之埶八j脂層時’對於疊層體4照射活性能量射線而降低樹脂層1 於^m溫度。，具體而言，從疊層體4之基材3 _光，並且對 度會1照光。樹脂層1比起活性能量射線照射前，其分解溫 83 201233560 如下，。照射活性能量射線後，樹脂層1之熱分解溫度成為 兮此’熱分解溫度，触顧触量測找 從25。〇_以1(TC/分將樹脂層丨升溫時，重量減少了 度。 /皿 其次，如圖7所示，將疊層體4設置於容器5内， 件)P抽吸容器5内之氣體，使疊層體4減壓到其k壓比 大亂，為巧。更佳為，使成為驗a以下，更佳為真訂、以R1 R2 R3 R4 (4 Y) Each of hydrogen, a planar or branched carbon. In the earthy earthy earth, alicyclic group, epoxidized fluorenyl group, and substituent (4), 11 of the above substituents (2Y) is preferably 〇5 to 5. When η is 0, the sulfhydryl group is not particularly limited by e, but η can take into account the thermal decomposition property of the resin layer i, and the polycyclic ring is directly bonded, and the 5-methyl group is lowered. ^;=Do not limit, for example, the decyl group can be reduced to terpenes, 5-mercapto-redecene, 5-octyl-decene, 5_ =, 5-tri-nine-based bases 5-3 Oxycarbyl decyl oxime group is reduced by olefin, 5-dimethyl decyl decene, 5-methyl dimethyl sulphate, etc. Base drop ^ person = _ olefin monomer polymerization 201233560 Will: substrate: olefin 2 when the mechanical properties of 5-butyl 5 propyl propene, &amp; triethoxy miscellaneous, show two The limit ^ ' can be formed by the above-mentioned general formula (1Υ) table _ 莰 莰 系 树 , , , , , , Terpene, polyhexyl group drop, f 1 group drop _, polypentyl group polycondensation - ί:, = group: epoxypropyloxymethyl group drop, dilute _ glycidoxy group; ϊ: co-ethylene group Oxygen-based dilute copolymer, sulfhydryl group _ Ding Qi (4) 1 kimate ♦ oxypropoxymethyl group drop 基 降 获 共聚物 共聚物 共聚物 i i i i i i 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧 环氧-ethoxy ethoxy group ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Base drop ^^?=Oxygen Shiki base reduced thin, = drop · butyl drop "v diyl: oxy group is reduced by poly, the amount is broken 00 compared with r-1 here, the weight of the molecular weight can be According to _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The riding towel 'has a reactive solvent when it is mixed, 'can be used to dissolve the organic compound of the lowering of the gynecological monomer, such as: pentylene, hexane, gamma, nitrobenzene: phthalate 1 and so on; alicyclic hydrocarbons such as cyclohexane; benzene, chlorobenzene, 2-chloropropanone, i-gas, butadiene, 2 _ _ (polar) hydrocarbons of the upper = I 2 methyl propyl, 1- gas smoldering, such as woirl catalyst compared to the aforementioned molar ratio of the rare monomer, 20: contend. ^ ^^0.^20,000:^1 1,000:140,000:1 It is better. When the ageing monomer is polymerized by nickel catalyst, the polymerization temperature is -i〇〇°c~120Cj Jiaojia' Cao~9〇. 〇尤佳,_1 (rc~8〇t: even better. Xixia thin resin) with the full amount of resin layer 1 (excluding solvents, thinners) •,... “Set the ratio of %~100% by weight More preferably, it is more than 20% by weight of ruthenium. In the case of the resin layer 1, the resin layer 1 can be formed into a film shape in advance, and bonded to each other: in the embodiment, the flatness of the resin layer 1 is ensured. In the viewpoint of "1. Hunting by spin", a varnish (resin composition) containing each of the resin layers 1 is applied and dried, thereby forming the resin layer 1. Thus, the resin layer i is formed. The varnish may contain, in addition to the above components, a gluten or a thinner. Lu Cat 'Valley! 1 丨 is not particularly limited, for example, rice, decahydronaphthalene, mineral essence (mineral neem), etc.二' Ben Jun, C Alcohols/ethers such as monoterpene _, dipropylene glycol oxime ether, diethylene glycol monoethyl ether, diglycidyl ether, ethyl carbonate, ethyl acetate, n-butyl acetate, chylomicron SB, 3-ethyl Ethyl oxypropionate, propylene glycol monoterpene ether acetate, diethylene glycol monoethyl 82 201233560 two = γ, γ_丁内_内_, 戊, py^hf) face amine, indoleamine. The varnish can adjust the viscosity of the varnish to form a film. It is easy to form a film. M-cyclohexyl dimethanol, ethylene glycol, etc., cyclic aliphatic resin = 2 ==: can improve the fluidity of the varnish, and can improve 3 _, secondly, the semi-conductive thin 2 and the substrate are first separated by the resin layer 1 The open layer is adhesive and is mounted on the component forming surface of the semiconductor wafer 2 (pre-shaped i-plane). The face of the yak. Further, the back surface ii of the element of the semiconductor wafer 2 is protected by the substrate 3, and the body 4 is placed on a polishing apparatus (not shown) to polish the surface of the semiconductor wafer 2 on the opposite side of the sCrf. As a result, as shown in Fig. 6 (8), the thickness of the half-day yen 2 is, for example, 50 μτη or less and ΙΟμηι or more. Or, on the back side of the semiconductor crystal® 2, an electrode such as a bump is formed, and a through-hole is formed by the +-conductor crystal 2 . Edited in the second half. The step of curing the back side of the conductor crystal® 2 is to apply the laminate 4 to &amp; a bucket of about 300 C, but under the heat, the resin layer 1 is not easily thermally decomposed, and the semiconductor twist 2 does not escape from the substrate. 3 peeling. When the resin layer 1 is used to thermally decompose the temperature of the resin layer 1 due to the active energy ray, the laminate 4 is irradiated with an active energy ray to lower the temperature of the resin layer 1 at a temperature of 2 m. Specifically, the substrate 3 from the laminate 4 is _ light, and the contrast is 1 light. The resin layer 1 has a decomposition temperature 83 201233560 as compared with that before the active energy ray irradiation. After the irradiation of the active energy ray, the thermal decomposition temperature of the resin layer 1 becomes the thermal decomposition temperature, and the contact measurement is found from 25. 〇 _ _ 1 (TC / min when the resin layer 丨 temperature, the weight is reduced. / dish, as shown in Figure 7, the laminate 4 is placed in the container 5, the piece) P in the suction container 5 It is a good idea that the gas is decompressed to the k-pressure ratio of the laminate 4. Better, so that it becomes the following, it is better to be true,

If氣體A氛圍。又’容器5内之氣壓之下限値不特別限定，由於 裝置的性能的關係，例如為〇.〇lpa。 、 於該減壓下將疊層體4加熱到樹脂層丨之氧分 將疊進行熱 猎由树知層1的熱分解，如圖8所示，能夠 。將半導體晶圓2與基材3分離的固如2 的門ίΐτ ΐ tiiί ®2從基材3剥開，使得半導體晶圓2 的周緣稍-部分往與基材3之表面麵直之方向離開。 可使ϋ 了減低對於半導體晶圓2的應力，也 基d 之表面滑動，而將半導體晶圓2從 2施形態由於樹脂層丨的殘渣非常少、或完全沒有殘渣， 抑制半法分離轉體晶圓2與基材3 ’也能 薄時，若以^it裂。尤其，#半導體晶圓2的厚度非常 裂Γ慮，但是本實施形態不會產生如 逢，也可清“導體！=在半導體晶圓2附著的_層1的殘 ，視需要_轉體_2 本實施形態之作用效果加以説日t 樹月匕if ίΐί 屋下將疊層體4加熱，而將熱分解性之 樹月曰層1熱分解而使氣化。由於係於減壓下進行疊層體4之熱分 84 201233560 解，因此已氣化的熱分解性之樹脂層丨會從容器5排出，熱分解 步進打氣化。藉此’能夠減少附著於半導體晶 固2而殘留的熱分解性之樹脂層1的殘渣量。 所以，能夠簡化或省略半導體晶圓2的洗滌步驟，省去半導 體裝置之製造的煩雜。尤其，藉由省略半導體晶κ 能簡化料體裝置之製造频。. 彈 又’藉由於5Pa以下之氣體氛圍下加熱疊層體4，而將埶分 =之樹脂層1扣熱分解，能更為確實地減少熱分解性脂 的殘渣量。 又，本實施形態，由於係在減壓下加熱疊層體4，並將埶分解 性之樹脂層1付熱分_使氣化，目此也可齡瞒於基材3 η，.的齡解性之麟層丨誠渣。#再_基材3時，能省 ^或間化基材3的洗齡驟’能達成半導體裝置之製造步驟的簡 、、产中’藉由照射活性能量射線’#使用熱分解 /皿度^触層1時，能抑継對於半導體晶圓2造成的影塑。 貫施形態巾’當形成熱分解性之樹脂層1時，係以 熱分解性之樹脂層1之各成分的清漆塗佈在基材3。 二主研磨开㉝气性二常5巧均性非常少的樹脂層1。 與基材固定(例如6)者性之膜，將半導體晶圓 體曰著性之膜時’由於膜的厚度不均勻，若將半導 +導體晶圓研磨地非常薄。 尸以難以將 厚产，t本實施形態中，由於可以形成平滑性非常優良、 常ί即Γ半導體晶圓2研磨地非 胺车3、’ =層1係使用聚碳酸I系樹脂、聚酉旨系樹脂、聚酿 樹脂、^茨^夺月旨去聚胺曱_系樹脂、（曱基)丙烯酸系 烯糸納曰中任一者的材料。若將該等樹脂使用於樹脂 85 201233560 導體晶圓2==減輕半導體晶圓2的應力，可防止半 之$^肉ίϊ明不限於前述第5實施形態，在能達成本發明目的 之耗圍内_形、改良等也包含在本發明。 a曰的 3 Z施形態係於基材3形成_層1後，固定基材3 ，、i本日a^2,但不限於此’也可在半導體晶圓2形成樹脂層卜 仏’冑5實施形態係實施半導體晶圓2之研磨，但不限於 謝脂層1固定半導體晶圓2與基材3之後，也可不實施 t而於半導體晶圓2形成凸塊等電極、或於半導體 貝通孔。 〜 【實施例】 二、，其次針對本發明之第3、第4實施形態所對應的具體實施例加 以說明。 1.暫時固定劑之製備 固—=先製備如以下所示之樣本他认〜认、樣本胤见之暫時 [樣本 No.ia；] &lt;1異山梨酯碳酸酯(polyisosorbide carbonate)之合成〉 各_稱量異山梨酯l〇2.01g(0_698莫耳）、碳酸二苯酯149.53g (0.=^莫耳）、碳酸铯〇 〇〇23g(6 98xl(r6莫耳），之後將此等裝入反 應谷器。。反應的第1步驟，係於氮氣氛圍下，將反應容器浸入加 熱到120 C的加熱槽並攪拌，使原料溶解，持續攪拌2小時。其次， 於反應的第2步驟，將反應容器内減壓為i〇kPa，於12(rc持續擾 摔1小時。其次’於反應的第3步驟，將反應容器内減壓為〇.5kPa 以下’於120 C持續授拌1.5小時。其次於反應的第4步驟，將反 應=器内維持減壓在〇 5kPa以下，花費約3〇分鐘將加熱槽的溫度 升溫到180°C後，繼續於18〇艽攪拌L5小時。又，將前述反應的 第2〜4步驟產生的酚蒸餾排除到反應容器外。然後，使反應容器 内的壓力回到常壓後’添加γ-丁内酯1200mL，使產物溶解。其次， 86 201233560 於攪拌異丙醇/水=9/l(v/v)之混合溶液12.0L的狀態’滴加已溶有 產物的溶液。其次，將析出的沉澱以抽吸過濾回收，將回收的沉 澱以異丙醇/水=9/l(v/v)的混合溶液4.0L洗滌後，以抽吸過濾回 收。將回收的沉澱以真空乾燥機進行8〇。(^18小時乾燥，獲得聚異 山梨酯碳酸酯之粉末123.15g。 &lt;暫時固定劑之製作&gt; 將獲得之聚異山梨酯碳酸酯l〇〇g、作為活性劑之RhodordIf gas A atmosphere. Further, the lower limit of the gas pressure in the container 5 is not particularly limited, and is, for example, 〇.〇lpa due to the performance of the device. The laminate 4 is heated to the oxygen layer of the resin layer under the reduced pressure, and the stack is subjected to thermal decomposition by thermal decomposition of the tree layer 1, as shown in Fig. 8. The gate 2 of the semiconductor wafer 2 separated from the substrate 3 is peeled off from the substrate 3 such that the periphery of the semiconductor wafer 2 is slightly-partially separated from the surface of the substrate 3. Therefore, the stress on the semiconductor wafer 2 can be reduced, and the surface of the base d can be slid, and the semiconductor wafer 2 can be prevented from being separated from the semi-method by the residue of the resin layer due to very little or no residue. When the wafer 2 and the substrate 3' can also be thin, if they are cracked. In particular, the thickness of the #semiconductor wafer 2 is very cracked, but in the present embodiment, it is possible to clear the "conductor! = the residue of the layer 1 attached to the semiconductor wafer 2, as needed. (2) The effect of the present embodiment is as follows: The laminate 4 is heated under the house, and the thermally decomposable tree layer is thermally decomposed and vaporized. The thermal fraction 84 201233560 of the laminate 4 is decomposed, so that the vaporized thermally decomposable resin layer 排出 is discharged from the container 5, and the thermal decomposition step is ventilated, thereby reducing the residual adhesion to the semiconductor crystal solid 2 The amount of residue of the thermally decomposable resin layer 1. Therefore, the washing step of the semiconductor wafer 2 can be simplified or omitted, and the trouble of manufacturing the semiconductor device can be omitted. In particular, the manufacturing frequency of the material device can be simplified by omitting the semiconductor crystal κ. By heating the laminate 4 in a gas atmosphere of 5 Pa or less, the resin layer 1 is decomposed and thermally decomposed, and the amount of residue of the thermally decomposable grease can be more reliably reduced. Morphology, since the laminate 4 is heated under reduced pressure, The decomposable resin layer 1 is subjected to heat-distribution _ to vaporize, and the same can be used for the substrate 3 η, the age-resolving lining layer 丨 slag. #再_Substrate 3, can save ^ or the cleaning stage of the substrate 3 can achieve the manufacturing process of the semiconductor device, and the production process can be suppressed by irradiating the active energy ray '# using the thermal decomposition/diffness layer 1 In the case of forming the thermally decomposable resin layer 1, a varnish of each component of the thermally decomposable resin layer 1 is applied to the substrate 3. 33 gas-constant 2 often has a very small resin layer 1. The film is fixed to the substrate (for example, 6), and the film of the semiconductor wafer is impervious to the film because of the uneven thickness of the film. The semi-conductor + conductor wafer is very thin. The corpse is difficult to produce thick, and in this embodiment, it is possible to form a non-amine car 3, '= layer which is very excellent in smoothness, and is usually polished on the semiconductor wafer 2. 1 is a polycarbonate I-based resin, a polyfluorene-based resin, a poly-resin resin, or a polyamine hydrazine resin, or a fluorene-based olefin. The material of any of the materials. If the resin is used in the resin 85 201233560, the conductor wafer 2 == reduces the stress of the semiconductor wafer 2, and it is possible to prevent the half-thickness from being limited to the fifth embodiment. The invention is also included in the invention. The 3 Z embodiment of the a 曰 is formed after the substrate 3 is formed into the layer 1, and the substrate 3 is fixed, i. However, the present invention is not limited thereto. The semiconductor wafer 2 may be formed by performing a polishing process on the semiconductor wafer 2, but after the semiconductor wafer 2 and the substrate 3 are fixed, the resin layer 2 is not limited thereto. It is also possible to form electrodes such as bumps or semiconductor via holes in the semiconductor wafer 2 without performing t. [Examples] Second, secondly, specific embodiments corresponding to the third and fourth embodiments of the present invention are applied. Description. 1. Preparation of temporary fixatives -=Prepare the sample as shown below. The sample is recognized and the sample is seen temporarily [Sample No. ia;] &lt;1 Synthesis of polyisosorbide carbonate> Each _ weighs isosorbide l〇2.01g (0_698 mol), diphenyl carbonate 149.53g (0.=^mole), barium carbonate 23g (6 98xl (r6 mol), then this The reaction step was carried out. The first step of the reaction was carried out under a nitrogen atmosphere, and the reaction vessel was immersed in a heating tank heated to 120 C and stirred to dissolve the raw material, and stirring was continued for 2 hours. Second, in the second reaction. In the step, the pressure in the reaction vessel is reduced to i kPa, and 12 rc is continuously disturbed for 1 hour. Secondly, in the third step of the reaction, the pressure in the reaction vessel is reduced to 〇5 kPa or less. 1.5 hours. Next, in the fourth step of the reaction, the pressure in the reactor was maintained at 〇5 kPa or less, and the temperature of the heating bath was raised to 180 ° C in about 3 minutes, and then the mixture was stirred at 18 ° C for 5 hours. Further, the phenol distillation produced in the second to fourth steps of the above reaction is excluded from the reaction vessel. Then, the reaction is allowed to proceed. After the pressure in the device returns to normal pressure, 1200 mL of γ-butyrolactone is added to dissolve the product. Secondly, 86 201233560 is stirred in a state of 12.0 L of a mixed solution of isopropanol/water = 9/l (v/v). The solution in which the product has been dissolved is added dropwise. Secondly, the precipitate precipitated is recovered by suction filtration, and the recovered precipitate is washed with 4.0 L of a mixed solution of isopropyl alcohol/water = 9/l (v/v) to be pumped. The recovered precipitate was collected by a vacuum dryer (8 hours) to obtain a powder of 123.15 g of polyisosorbide carbonate. &lt;Preparation of temporary fixative&gt; Polyisosorbide obtained Carbonate l〇〇g, Rhodord as an active agent

Photoinitiator2074(FABA)(Rhodia Japan(股)公司製 RhodorsilPhotoinitiator 2074 (FABA) (Rhodia, manufactured by Rhodia Japan Co., Ltd.)

Photoinitiator2074)5g、作為增感劑之ι_氯-4-丙氧基噻吨酮(英 Lambson 公司製 SPEEDCURE CPTX(商品名))1.5g，溶解於 γ-丁内 酯(溶劑)159.8g ’製作成樹脂濃度40%之暫時固定劑。 又，該樣本No.lA之暫時固定劑之黏度(25。〇為30mPa · s。 [樣本 No.2A] &lt;1，3-環己烷碳酸醋/内向-降莰烯碳酸酯共聚物之合成&gt; 於具備撥拌機、原料添加口、及氮氣導入口的三口燒瓶中， 添加1，3-環己烧二醇(I91.8g、1.650mol)、順式内向-降获烧二曱醇 (145.0g、〇.930mol)、碳酸二苯酯(530.3g、2.48mol)、氫化鋰(〇.l〇lg、 0.013mol)，於氮氣氛圍下，於120〇c加熱，溶解混合物。 其次將反應混合物於氮氣氛圍下於12(TC攪拌2小時。之後， 將反應容器内減壓到約l〇kpa，於12〇。(：攪拌1小時。之後，將反 應容器内減壓到〇.5kPa以下，於120°C擾拌1.5小時，再於180°C 撥掉1·5小時。 使上述獲得之反應物溶於四氫呋喃，進行過濾。之後將該濾 液投入水/甲醇=1/9之溶液，回收沉殿物，再以水/曱醇的溶 液充，分洗滌並減壓乾燥後，獲得287..0g之1，3_環己烧碳酸酯/内向 -降莰烯碳酸酯共聚物(產率76%)。 將合成的1，3-環己烷碳酸酷/内向-降莰烯碳酸酯共聚物以 GPC測定重量平均分子量，結果，為38,〇〇〇。 &lt;暫時固定劑之製作〉 將獲得之1,3-環己院碳酸醋/内向-降莰烯碳酸酯共聚物 87 201233560 l〇〇g、作為活性劑之 RhodorsilPhotoinitiator2074(FABA)(Rhodia 坤311(股)公司製 Rhodorsil Photoinitiator2074)5g、作為增感劑之 i_ 氣-4-丙氧基噻吨酮(英Lambson公司製SPEEDCURE CPTX(商品 名))1.5g ’溶解於γ_丁内酯(溶劑)159.8g，製作成樹脂濃度40〇/〇之 暫時固定劑。 又’該樣本No.2A之暫時固定劑之黏度(25。〇為20,000mPa · s ° [樣本 No.3A] &lt;1，4-聚丁烯碳酸酯之合成&gt; 於具備授拌機、原料添加口、及氮氣導入口的三口燒瓶中， 添加 1，4_丁二醇(168g、1.864mol)與碳酸二乙酯(264.2g、2.236 mol) ’於氮氣氛圍下於9〇〜i〇〇°c加熱，將混合物溶解。 尸其次’添加20%乙醇鈉乙醇溶液(80ml、0.186mol)後，於氮氣 氛圍下’於90〜l〇(Tc攪拌1小時。之後，將反應容器内減壓到約 30kPa，於90〜loot攪拌1小時、12(rC攪拌丨小時。之後再於〇 lkpa 的真空下於150°C攪拌1小時、於180°C攪拌2小時。 使上述獲得之反應物溶於四氫呋喃(2L)，進行過濾，去除觸媒 殘渣。之後將該濾液投入蒸德水/甲醇=1/9之溶液(2〇L)，回收沉 澱物，、並且以蒸餾水/甲醇=1/9之溶液(1〇L)充分洗滌並減壓乾燥 後’獲得125g之1，4·聚丁烯碳酸酯(產率48%)。 將合成之1，4-聚丁婦碳酸醋以GPC測定重量平均分子量，結 果，為 35,000。 &lt;暫時固定劑之製作&gt; 將獲得之1，4-聚丁烯碳酸酯100g、作為活性劑之处“沉沿Photoinitiator 2074) 5 g, ι_chloro-4-propoxythioxanthone (SPEEDCURE CPTX (trade name) manufactured by Lambson Co., Ltd.) 1.5 g, dissolved in γ-butyrolactone (solvent) 159.8 g A temporary fixative with a resin concentration of 40%. Further, the viscosity of the temporary fixing agent of the sample No. 1A (25. 〇 is 30 mPa · s. [Sample No. 2A] &lt;1,3-cyclohexane carbonate vinegar/inward-northene carbonate copolymer Synthesis&gt; In a three-necked flask equipped with a mixer, a raw material addition port, and a nitrogen inlet, 1,3-cyclohexane diol (I91.8 g, 1.650 mol) and cis inward-reduced bismuth were added. Alcohol (145.0 g, 930.930 mol), diphenyl carbonate (530.3 g, 2.48 mol), lithium hydride (〇.l lg, 0.013 mol), heated under a nitrogen atmosphere at 120 ° C to dissolve the mixture. The reaction mixture was stirred at 12 (TC for 2 hours) under a nitrogen atmosphere. After that, the pressure in the reaction vessel was reduced to about 10 kPa to 12 Torr. (: stirring for 1 hour. Thereafter, the reaction vessel was depressurized to 〇. 5 kPa or less, the mixture was stirred at 120 ° C for 1.5 hours, and then removed at 180 ° C for 1.5 hours. The reaction product obtained above was dissolved in tetrahydrofuran and filtered, and then the filtrate was poured into water/methanol = 1/9. The solution is recovered and recovered, and then charged with a water/sterol solution, washed and dried under reduced pressure to obtain 287..0 g of 1,3_cyclohexane carbonate/inward-northene carbonate. Copolymer (yield 76%) The weight average molecular weight of the synthesized 1,3-cyclohexanecarbonic acid/inward-northene carbonate copolymer was measured by GPC, and as a result, it was 38, 〇〇〇. Preparation of fixatives > 1,3-cyclohexyl carbonate/intro-northene carbonate copolymer 87 201233560 l〇〇g, Rhodorsil Photoinitiator 2074 (FABA) as an active agent (Rhodia Kun 311) Rhodsil Photoinitiator 2074) 5 g, i_gas-4-propoxythioxanthone (SPEEDCURE CPTX (trade name) manufactured by Lambson Co., Ltd.) 1.5 g of 'sensitizer> dissolved in γ-butyrolactone (solvent) 159.8 g, A temporary fixing agent having a resin concentration of 40 〇 / 。 was prepared. The viscosity of the temporary fixing agent of the sample No. 2A (25. 〇 is 20,000 mPa · s ° [sample No. 3A] &lt; 1,4-poly Synthesis of olefin carbonate> In a three-necked flask equipped with a mixer, a raw material addition port, and a nitrogen gas inlet, 1,4-butanediol (168 g, 1.864 mol) and diethyl carbonate (264.2 g, 2.236) were added. Mol) 'heated in a nitrogen atmosphere at 9 〇 to i 〇〇 ° c to dissolve the mixture. The corpse followed by 'add 20% ethanol sodium ethanol solution After (80 ml, 0.186 mol), it was stirred at 90 ° C for 1 hour under nitrogen atmosphere. After that, the pressure in the reaction vessel was reduced to about 30 kPa, and the mixture was stirred at 90 ° to 1 hour for 12 hours. . Thereafter, the mixture was stirred at 150 ° C for 1 hour under vacuum of lk lkpa and at 180 ° C for 2 hours. The reactant obtained above was dissolved in tetrahydrofuran (2 L) and filtered to remove the catalyst residue. Then, the filtrate was poured into a solution of distilled water/methanol = 1/9 (2 〇L), and the precipitate was recovered, and thoroughly washed with a solution of distilled water/methanol = 1/9 (1 〇 L) and dried under reduced pressure. 'A 125 g of 1,4·polybutylene carbonate was obtained (yield 48%). The weight average molecular weight of the synthesized 1,4-polybutyrate carbonate was measured by GPC, and the result was 35,000. &lt;Preparation of temporary fixative&gt; 100 g of 1,4-polybutene carbonate obtained as an active agent

Photoinitiat〇r2074(FABA)(Rhodia Japan(股)公司製 Rh〇dorsilPhotoinitiat〇r2074 (FABA) (Rhodo Dorsil, manufactured by Rhodia Japan Co., Ltd.)

Ph〇toinitiat〇r2074)5g、作為增感劑之丨-氯本丙氧基噻吨嗣(英 Lamb·公司製SPEEDCURECPTX(商品名別5g，溶於γ·丁觸 (溶劑)159」8g，製作樹脂濃度4〇%之樣本Ν〇·3Α2暫時固定劑。 又，该樣本Νο.3Α之暫時固定劑之黏度(25。〇)為15,〇〇〇mPa · 88 201233560 [樣本 No. IB] &lt;5-癸基降莰烯聚合物之合成&gt; 於反應容器導入乙酸乙酯(430g)、環己烷(89〇g) ' 5-癸基降获 烯(223g、0.95莫耳），於該系中於40¾流入乾燥氮氣3〇分鐘，去 除溶存氧。將雙(甲苯)雙(全氟苯基)鎳133g(〇 275m莫耳)溶於 乙酸乙酯者添加到反應系中，將上述系從2〇。〇至35°c花費15分 鐘升溫，保持在該溫度將該系攪拌3小時。 '刀 系冷卻至室溫後，於添加有30%過氧化氫水49g的純水約 l，500g中溶解冰醋酸26g，將其添加到前述反應系中，將反應 50°C擾拌5小時後’停止赫，去除分離的水層。將留下來的有、 機層藉由添加混有曱醇220g與異丙醇220g者並攪拌、除去進 洗滌。再者，將環己烷510g與乙酸乙酯290g添加到系中，^ 溶解後，再藉由將添加混有曱醇156g與異丙醇167g者並撥掉、 除去進行洗滌，重複2次。 於洗蘇後的有機層添加l8〇mL環己烧，使系均勾溶 加米670g。然後，以旋轉蒸發器於減壓下將環己烷蒗發 ▲ 此獲得產量：543g(35%的莱溶液)的樹脂組成物c。‘、、、X ” 稭 將合成之癸基降莰烯利用GPC測定重量平均分 為 177000。 里 ’結果， &lt;暫時固定劑之製作&gt; 將獲得之5-癸基降莰烯加成聚合物1〇〇g溶於丨3孓二 (溶劑)122.2g，製作成樹脂濃度45%之N〇1B之暫^固定劑土本 ^該樣本NCUB之暫時岐劑之黏度(25。〇為8細^^。 [表1】 89 201233560 樣 本 No.lA 樣本 No.2A 樣本 No.3A 樣本 No.lB 摻合 樹脂 樹脂 聚異山梨酯碳酸酯 100 [重量 組成 成分 1.3-PCC-内向-PNDMC 100 份J 物 1.4-聚丁烯碳酸酯 100 5-癸基降珏烯聚合物 100 活性 劑 Rhodosil PhotoPhotoinitiator2074 5 &quot;5 5 增感 劑 1-氯-4-丙氧基噻吨酮 1.5 1.5 1.5 溶劑 Γ-丁内酯 159.8 159.8 159.8 三甲基笨 122.2 合計 266.3 266.3 266.3 222.2 暫時固 疋劑的黏;trml Pa*sl 30000 20000 15000 8000 2.半導體晶圓的背面加工 其次，如以下所示，使用各樣本No.之暫時固定劑，對於半導 體晶圓的背面施以加工。 [實施例1A] 首先使用旋塗機，將樣本No.lA之暫時固定劑塗佈於8 吋透明玻璃（轉速：1200rpm、時間：30秒），其次於熱板上以 120°C、5分鐘的條件進行預烘(乾燥），形成由厚度3〇(jjn之暫時固 定劑構成的薄膜(固定樹脂層）。 又，預先以流變計裝置(Thermo Fischer Scientific公司製、 Haake RS150」）測定該薄膜於2〇〇。〇之黏度，結果為 一 &lt;2&gt;其次，使用覆晶支座(FCB3、Panasonic公司製），將Π2 Ϊ ΐ Ϊ體晶片（1 G.5mm四方)以4.5mm的間隔隔著由暫時固定劑構 ，的薄膜而暫時固定在8忖透明玻璃上(溫度：2〇(rc、壓 3.6MPa、時間：15 秒）。 ’形成密封材層使得被覆暫時固定於透明玻璃的半 &lt;3&gt;其次 導體晶片。 之齡:L係藉由作為環氧樹脂之含有聯伸苯基骨架 Ϊ上使被覆半導體晶片後，以壓力3 9MPa 到， 一人，加熱密封材層使硬化，在透明_上形成密封有 90 201233560 半導體晶片的電子零件配置密封。 進行又，密糊之硬化係於溫度啊她她小時的條件 &lt;5&gt;其次’隔著透明玻璃對於薄 ，外線(活性能量射線)，使暫時固定二= 封材硬化物的樣;^放二f明固j f電子零件配置密 實施暫時固定劑之熱分解。 &quot;皿又、日令間進行加熱處理， 解。又，暫時固定劑係利用鐵、3〇分鐘的加熱處理進行熱分 &lt;7&gt;其次’將已實施熱分解的樣本從烘 玻璃與電子零件配置密封材硬化物之間隙放入鎖組=明 零件配置密封材硬化物脫離8吋透明玻璃脫 订 '子 [比較例2A〜3A] 之麵、成膜條件、前述步 改變為二片1 時固疋條件、&lt;3&gt;之密封材層形成條件等各 電子零件配置密封材硬化物。 」锒進仃，形成 [實施例1B] 驟&lt;2m〈i&gt;使用讀軸定献麵、顧料、前述步 各改&quot;片暫咖定條件、&lt;3&gt;之密封材層形成條件等， ^文艾為如表2所不，並且將前述步驟&lt;6&gt;之暫時 丨j樣進仃，形成電子零件配置密封材硬化物。 3.評價 3 -1.暫時固定劑於20CTC之黏度 、、將各實施例及各比較例使用的各樣本No.之暫時固定劑之溶 於魏板上，於熱板上以暫_定射之溶齡揮發的溫 X 4間使乾燥，並從石夕基板剝離而獲得之由暫時固定劑構成的 201233560 试驗片’以間隔30μηι放置於流變計(Haake RS150型、Thermo Fischer Scientific公司製），以1〇分/〇C的速度從3〇升溫到3〇〇&lt;t， 於此同時以1Hz的周期施加剪切應力，測定此時的移位，以2〇〇c&gt;c 之値作為測定値。 又’實施例1A、比較例2A及3A使用之樣本，係經於18〇°c、 5分鐘的條件、又，實施例1B使用之樣本係經於⑽艺、5分鐘 的條件進行暫時固定劑之乾燥。 3-2.半導體晶片之間隔之測定 半導體晶片間之距離’係以Degigram(QV~Apex4(MPRX)、 MITUTOYO製)測定1〇處，並依以下判定基準判定。 〇 .元全沒有半導體晶片間隔ΙΟμιη以上之處時 χ ·有1處以上半導體晶片間隔l〇pm以上之處時 3-3·半導體晶片從密封材層突出的範圍之測定 以表面粗糙度計(SURFCOM480A、東京精密製)測定1〇處半 導體晶片從密封材層突出的量，並依以下判定基準判定。 〇 :完全沒有半導體晶片之突出量為10μιη以上之處時 X .有1處以上半導體晶片的突出量為以上之處時 以下表2顯示實施例ΙΑ、1B及比較例2A、3A之評價結果。 【表2】 92 201233560 「實施例1A 貫施例1R fcb較例2A 暫時固定劑 樣本No. 黏度丨mPasl 1A 1B 2A 3α '— 30000 8000 20000 150〇i〇 ~~~-- 薄膜之成膜 條件 丞板轉速 frpml 1200 2400 ------------ 1200 &quot;T2〇r~~~— 瞀時固定劑 加熱溫;tpni 180 120 180 T80 加熱時間[分 鐘1 5 5 5 1 -— 薄膜特性 薄膜膜厚 Γμηιΐ 30 50 30 30 i ioouc的黏 度「Pa.sl 1000 &quot;2000 5 5 ---------------- 半導體晶片 暫時固定條 /Λ. 溫度rci 200 200 160 ] 140 ~~~~ 壓力『MPal 3.6 T6 -- Ω9 Έ9 —— 件 間1秒1 15 To 10 — 10---— 密封材層形 成條件 sZrcl 125 125 ~~- 125 壓力IMPal 3.9 3.9 ~~~- 19 3.9 ^'~~~~ 時間1分鐘1 7 ~1 ~~- 7 7 —— 評價結果 半導體晶片 的間隔 〇 〇 χ - +平導體晶片 的突出量 〇 〇 如表2所示，各實施例由於將薄膜於2〇〇〇c之黏度設定為適當 的範圍内’可不生晶片間隔偏離及晶片沉沒兩者而製作電子零件 配置密封材硬化物。 相對於此’各比較例由於未將薄膜於2〇〇。(：之黏度設定為適當 摩圍内’結果付到發生晶片間隔偏離及晶片沉沒的電子零件配置 密封材硬化物。 其次’針對本發明之第5實施形態所對應的實施例(實驗例） 加以説明。 [實驗例1] (構成樹脂層1之清漆之製作） 將聚丙烯碳酸酯(EMPOWERMATERIALS公司製QPAC40) l〇〇g溶解於γ-丁内醋(溶劑)310g。於該聚丙烯碳酸酯溶液，添加 像活性劑(光酸發生劑)之 Rh〇dosilPhotoinitiator2074(Rhodia Japan (股)公司製Rhodorsil Phoinitiator2074)5g、增感劑之1-氯-4-丙氧基 噻吨酮(英Lambson公司製SPEEDCURE CPTX(商品名))1.5g溶於 γ-丁内酯(溶劑)30g而成的溶液，並攪拌以製成樹脂濃度24wt%之 清漆。 (測試） 93 201233560 ^对石夕晶圓之上以旋塗塗佈構成樹脂層i之清漆， 使乾燥5分鐘。藉此，可形成厚度5μπι之樹脂層j。其次 有树月a層1的8 «抑晶®分f彳為7mm&gt;&lt;7mm四方的附有樹於展、 的石夕板。又，樹脂層1係如前述實施形態為具有用於固定半^ 晶圓與基材所需之足夠黏著性者。 等體 其次，對於樹脂層1照射i線，使曝光量為1〇〇〇mJ/cm2 樹脂層1之熱分解溫度降低後，將樹脂層丨及矽板放入容器5， 中，抽吸容器5内之氣體，於減壓下(3卩3)於2〇〇£)(：加熱^ 樹脂層1熱分解並氣化）。 里(將 之後，從容器5取出矽板，以目視觀察矽板之表面(形成 脂層1之侧之面）。如圖10所示，確認在矽板之表面完全沒有樹_ 層1的殘渣，非常乾淨。 曰 [實驗例2] (構成樹脂層1之清漆之製作） &lt;5-癸基降莰烯/5-環氧丙氧基甲基降莰烯=7〇m〇1%/3〇m〇1% 共聚物之合成&gt; 於經過充分乾燥的反應容器中，導入乙酸乙酯(6〇〇幻、環己烷 (600g)、5-癸基降莰烯(265.25g，1.131莫耳)及5_環氧丙氧基甲基 降莰烯(87.36g，0.485莫耳）。於該系中於4〇。〇流入乾燥的氮氣3〇 分鐘，將溶存氧除去。之後，於反應系中添加使雙(曱苯)雙(全氟 苯基)鎳6.58g(0.0136莫耳)溶於丙酮66.5lg而成者。 ，上述系花費10分鐘從4(TC升溫到60¾，保持在該溫度， 將該系攪拌3小時。於添加有30%過氧化氫水462.0g的純水約 705.0g中溶解冰醋酸245.0g，將其添加到前述反應系中。將反應 系於50°C擾拌5小時後’於系中添加異丙醇。停止擾拌，去 除分離的水層後，分3次添加純水450g與異丙醇i5〇g、擾拌、去 除以洗滌留下來的有機層。 將洗務後的有機層以400mL環己烧稀釋，添加到6倍量的曱 醇(7200mL)中’將析出的聚合物以過濾回收。將獲得之固體成分 於空氣中風乾18小時後，於ImmHg減壓下乾燥24小時，藉此以 94 201233560 固體树脂的形式獲得目的物284.7g(產率95.8%)。 ⑽t/成之5·癸基降茨烯/5'環氧丙氧基曱基降获烯= 70mol%/ 30mol/。以GPC測定重量平均分子量，結果為72,〇〇〇。 &lt;清漆之製作&gt; ’ 如H得之5_癸基降茨婦/5_環氧丙氧基曱基降_ = 7〇111〇1%/ 100g溶於2_細(溶劑)m3g，製成樹脂濃度 30wt%的清漆。 (測試） 於8寸石夕晶圓上以旋塗塗佈構成樹脂層1清 ，分鐘。藉此，可形成厚度_ ：▲次於= 吏 ^月曰層1的8咐晶]1]切割成7mmx7mmE^_樹脂層丨的石夕 樹脂層1係如第5實施雜之具有用於將半導體晶圓與 基材固疋所需之足夠黏著性者。 其次’將樹脂層i及石夕板放入容器5之中，抽吸容器5内之 =體’於減壓下(3Pa)於·。c加熱2分鐘(將樹脂層丨熱分解並氣 化）。 厚！ 容器5取出雜’以目視觀察魏之表面(形成有樹脂 1曰祕、杏?i。如圖1〇所示，確認在石夕板之表面完全沒有樹脂層 1的殘渣’非常乾淨。 [比較實驗例1] (樹脂層1之清漆之製作） 製作與實驗例1同樣的清漆。 (測試）Ph 〇 in in 2 2 2 2 2 2 2 2 2 2 丨 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 氯 英 英 英The sample Ν〇·3Α2 temporary fixative with a resin concentration of 4〇%. Also, the viscosity (25.〇) of the temporary fixative of the sample Νο.3Α is 15, 〇〇〇mPa · 88 201233560 [Sample No. IB] &lt Synthesis of 5-mercapto-northene polymer&gt; Ethyl acetate (430 g) and cyclohexane (89 〇g) ' 5-mercapto-reduced olefin (223 g, 0.95 mol) were introduced into the reaction vessel. In this system, dry nitrogen gas was flowed into the system at 403⁄4 for 3 minutes to remove dissolved oxygen. 133 g of bis(toluene)bis(perfluorophenyl)nickel (〇275m mole) was dissolved in ethyl acetate and added to the reaction system. The temperature was raised from 2 Torr to 35 ° C for 15 minutes, and the system was stirred at this temperature for 3 hours. After the knife system was cooled to room temperature, pure water containing 49 g of 30% hydrogen peroxide water was added. 25g of glacial acetic acid was dissolved in 500g, added to the above reaction system, and the reaction was stirred at 50 ° C for 5 hours, then 'stop He', the separated water layer was removed. The remaining layer was left by 220 g of decyl alcohol and 220 g of isopropyl alcohol were added, and the mixture was stirred and removed for washing. Further, 510 g of cyclohexane and 290 g of ethyl acetate were added to the system, and after dissolution, the mixture was mixed with decyl alcohol. 156g and 167g of isopropyl alcohol were removed and removed for washing, and repeated twice. After the washing, the organic layer was added with l8〇mL of cyclohexane, and the system was smelted with 670g of rice. Then, the rotary evaporator was used. Cyclohexane was decompressed under reduced pressure. ▲ This gave a yield: 543 g (35% of a solution) of the resin composition c. ',,, X" The sulfhydryl decylene synthesized by the straw was determined by GPC. 177000. Results, &lt;Preparation of Temporary Fixing Agent&gt; The obtained 5-mercapto-norbornene-addition polymer 1 〇〇g was dissolved in 丨3孓2 (solvent) 122.2 g to prepare a resin concentration of 45 %N〇1B temporary ^fixant soil this ^The viscosity of the temporary tincture of the sample NCUB (25. 〇 is 8 fine ^^. [Table 1] 89 201233560 Sample No.lA Sample No.2A Sample No.3A Sample No.lB blended resin resin polyisosorbide carbonate 100 [weight composition 1.3-PCC-inward-PNDMC 100 parts J 1.4-polybutene Acid ester 100 5-decyl decene polymer 100 Active agent Rhodosil PhotoPhotoinitiator 2074 5 &quot;5 5 Sensitizer 1-chloro-4-propoxy thioxanthone 1.5 1.5 1.5 Solvent Γ-butyrolactone 159.8 159.8 159.8 Three Methyl stupid 122.2 total 266.3 266.3 266.3 222.2 Viscosity of temporary solidifying agent; trml Pa*sl 30000 20000 15000 8000 2. The backside processing of the semiconductor wafer is followed by the use of the temporary fixing agent of each sample No. The back side of the semiconductor wafer is processed. [Example 1A] First, a temporary fixing agent of sample No. 1A was applied to 8 吋 transparent glass (rotation speed: 1200 rpm, time: 30 seconds) using a spin coater, followed by 120 ° C, 5 minutes on a hot plate. The film was pre-baked (dried) to form a film (fixed resin layer) composed of a temporary fixing agent having a thickness of 3 Å. The film was previously measured by a rheometer device (Haake RS150, manufactured by Thermo Fischer Scientific Co., Ltd.). The thickness of the film was 2 〇〇. The result was a &lt;2&gt; Secondly, a flip chip holder (FCB3, manufactured by Panasonic) was used, and a Π2 Ϊ Ϊ Ϊ body wafer (1 G.5 mm square) was 4.5 mm. The film was temporarily fixed to 8 忖 transparent glass by a film made of a temporary fixing agent (temperature: 2 〇 (rc, pressure 3.6 MPa, time: 15 seconds). 'The sealing material layer was formed so that the coating was temporarily fixed to the transparent glass. Half of the &lt;3&gt; second conductor wafer. Age: L is made by coating the semiconductor wafer with a stretched phenyl skeleton as an epoxy resin, and then pressing the sealing layer to a pressure of 3 9 MPa. , forming a seal on the transparent _ 90 201233560 semi-conductive The electronic parts of the wafer are sealed. The hardening of the paste is based on the temperature. Her condition of the hour &lt;5&gt; Secondly, the transparent glass is used for thin, the outer line (active energy ray), so that the temporary fixing 2 = sealing material The sample of the hardened material; ^ put two f Minggu jf electronic parts configuration densely implements the thermal decomposition of the temporary fixative. &quot;The dish is heat-treated between the Japanese and the Japanese, and the temporary fixative is made of iron, 3 minutes. Heat treatment for heat separation &lt;7&gt; Secondly, the sample that has been thermally decomposed is placed in the lock group from the gap between the baked glass and the electronic component arrangement sealing material hardened material = the parts are arranged, the sealing material is cured, and the transparent glass is removed. In the case of the surface of the 'Comparative Example 2A to 3A', the film forming conditions, and the step of changing the two steps to the solid state, and the sealing material layer forming conditions of &lt;3&gt;, the sealing material cured product is disposed.实施 仃 仃 仃 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 2 2 2 2 2 2 2 2 2 2 2 2 2 2 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读 读, ^Wenai is as shown in Table 2, and will be the aforementioned At the end of the <6>, the electronic component placement sealing material cured product was formed. 3. Evaluation 3 -1. Viscosity of the temporary fixing agent at 20 CTC, and each sample used in each of the examples and the comparative examples. The temporary fixing agent of No. is dissolved on the Wei plate, and is dried on the hot plate at a temperature X 4 which is temporarily dissolved and dissolved, and is peeled off from the Shishi substrate to obtain a temporary fixing agent 201233560 The test piece was placed in a rheometer (Haake RS150 type, manufactured by Thermo Fischer Scientific Co., Ltd.) at a time interval of 30 μm, and was heated from 3 Torr to 3 〇〇 at a speed of 1 〇 / 〇 C, at the same time at 1 Hz. The shear stress was applied in the cycle, and the shift at this time was measured, and the enthalpy of 2 〇〇 c &gt; c was measured. Further, the samples used in Example 1A and Comparative Examples 2A and 3A were subjected to a condition of 18 ° C for 5 minutes, and the sample used in Example 1B was subjected to a temporary fixing agent under conditions of (10) art and 5 minutes. Dry. 3-2. Measurement of the interval between the semiconductor wafers The distance between the semiconductor wafers was measured by Degigram (QV~Apex4 (MPRX), manufactured by MITUTOYO), and determined according to the following criteria. 〇. When there is no semiconductor wafer interval ΙΟμιη or more χ · When there is more than one semiconductor wafer interval l 〇 pm or more 3-3 · The semiconductor wafer protrudes from the sealing material layer by surface roughness meter ( SURFCOM 480A, manufactured by Tokyo Seimi Co., Ltd.) The amount of the semiconductor wafer protruding from the sealing material layer at one turn was measured and judged based on the following criteria. 〇 : When the amount of protrusion of the semiconductor wafer is not more than 10 μm or more X. When the amount of protrusion of one or more semiconductor wafers is the above, Table 2 below shows the evaluation results of Examples 1, 1B and Comparative Examples 2A and 3A. [Table 2] 92 201233560 "Example 1A Example 1R fcb Comparative Example 2A Temporary Fixative Sample No. Viscosity 丨mPasl 1A 1B 2A 3α '- 30000 8000 20000 150〇i〇~~~-- Film Formation Conditions丞 plate speed frpml 1200 2400 ------------ 1200 &quot;T2〇r~~~— 固定 固定 fixative heating temperature; tpni 180 120 180 T80 heating time [minutes 1 5 5 5 1 - — Film characteristics Film thickness Γμηιΐ 30 50 30 30 i iouuc viscosity “Pa.sl 1000 &quot;2000 5 5 ---------------- Semiconductor wafer temporary fixing strip / Λ. Temperature Rci 200 200 160 ] 140 ~~~~ Pressure "MPal 3.6 T6 -- Ω9 Έ9 - 1 second between parts 1 15 To 10 — 10---- Sealing layer formation conditions sZrcl 125 125 ~~- 125 Pressure IMPal 3.9 3.9 ~~~- 19 3.9 ^'~~~~ Time 1 minute 1 7 ~1 ~~- 7 7 —— Evaluation results Semiconductor wafer spacing 〇〇χ - + Planar wafer wafer protrusion amount as shown in Table 2 In each embodiment, since the viscosity of the film at 2 〇〇〇c is set to an appropriate range, the electronic component sealing material can be fabricated without wafer spacing deviation and wafer sinking. In the case of the comparative example, the film was not placed at 2 〇〇. (The viscosity of the film was set to be within the appropriate range.) The result was that the electronic component was placed in the sealing material to be cured. 'Examples (experimental examples) corresponding to the fifth embodiment of the present invention. [Experimental Example 1] (Production of varnish constituting the resin layer 1) Polycarbonate (QPAC40 manufactured by EMPOWERMATERIALS) g is dissolved in γ-butyrolactone (solvent), 310 g. To the polypropylene carbonate solution, Rhgdosil Photoinitiator 2074 (Rhoodorsil Phoinitiator 2074, manufactured by Rhodia Japan Co., Ltd.) like an active agent (photoacid generator) was added, and sensitization was added. 1-chloro-4-propoxythioxanthone (SPEEDCURE CPTX (trade name) manufactured by Lambson Co., Ltd.) 1.5 g of a solution dissolved in 30 g of γ-butyrolactone (solvent), and stirred to prepare a resin Varnish at a concentration of 24% by weight. (Test) 93 201233560 ^The varnish constituting the resin layer i was spin-coated on the Shi Xi wafer and allowed to dry for 5 minutes. Thereby, the resin layer j of a thickness of 5 μm can be formed. Next, there is a tree of the month a layer 1 of 8 «Suppressed® points f彳 is 7mm> &lt;7mm square with the tree on display, the stone board. Further, the resin layer 1 has a sufficient adhesiveness for fixing a half wafer and a substrate as in the above embodiment. Next, the resin layer 1 is irradiated with the i-line so that the exposure amount is 1 〇〇〇mJ/cm2. After the thermal decomposition temperature of the resin layer 1 is lowered, the resin layer and the ruthenium plate are placed in the container 5, and the suction container is aspirated. The gas in 5 is decompressed (3 卩 3) at 2 ) (): heating ^ resin layer 1 is thermally decomposed and vaporized). After that, the fascia was taken out from the container 5 to visually observe the surface of the fascia (the side on which the side of the lipid layer 1 was formed). As shown in Fig. 10, it was confirmed that there was no residue of the layer _ layer 1 on the surface of the raft. Very clean. 曰 [Experimental Example 2] (Preparation of varnish constituting resin layer 1) &lt;5-decylpentene-5-glycidoxymethylnordecene=7〇m〇1%/ Synthesis of 3〇m〇1% copolymer&gt; In a sufficiently dried reaction vessel, ethyl acetate (6 〇〇, cyclohexane (600 g), 5-decyl decene (265.25 g, 1.131) was introduced. Moer) and 5_glycidoxymethylnordecene (87.36 g, 0.485 mol). In this system, it is 4 Torr. The hydrazine flows into dry nitrogen for 3 minutes to remove dissolved oxygen. In the reaction system, 6.58 g (0.0136 mol) of bis(indolyl)bis(perfluorophenyl)nickel was dissolved in 66.5 g of acetone. The above system took 10 minutes to raise the temperature from 4 (TC to 603⁄4). At this temperature, the system was stirred for 3 hours, and 245.0 g of glacial acetic acid was dissolved in about 705.0 g of pure water to which 302.0% of hydrogen peroxide water was added, and this was added to the above reaction system. The reaction was carried out at 50 ° C. After 5 hours of disturbing Isopropanol was added to the system. After the separation of the separated water layer was stopped, 450 g of pure water and i5 〇g of isopropanol were added in three portions, and the organic layer remaining after washing was removed. The organic layer was diluted with 400 mL of cyclohexane and added to 6 times the amount of decyl alcohol (7200 mL). The precipitated polymer was recovered by filtration. The obtained solid component was air-dried in air for 18 hours, and then dried under reduced pressure of 1 mmHg. 24 hours, thereby obtaining 284.7 g (yield 95.8%) of the target product in the form of 94 201233560 solid resin. (10) t / 5 癸 降 降 /5 /5 ' ' ' ' ' ' %/ 30 mol/. The weight average molecular weight was measured by GPC, and the result was 72, 〇〇〇. &lt;Preparation of varnish&gt; 'If it is obtained by H_5_癸基降茨妇/5_epoxypropoxy thiol _ = 7〇111〇1%/ 100g dissolved in 2_fine (solvent) m3g to make a varnish with a resin concentration of 30% by weight. (Test) Applying a resin layer 1 on a 8 inch Shi Xi wafer by spin coating By the way, it is possible to form a thickness of _: ▲ next to = 吏 ^ 曰 曰 layer 8 of 8 ] crystal] 1] cut into 7mm x 7mm E ^ _ resin layer 石 夕 夕 resin layer 1 is the fifth implementation The adhesive layer i and the stone plate are placed in the container 5, and the body in the suction container 5 is under reduced pressure (3 Pa). ) The heating was carried out for 2 minutes (the resin layer was thermally decomposed and vaporized). Thickness! The container 5 was taken out of the mixture to visually observe the surface of Wei (formed with resin 1 杏 secret, apricot? i. As shown in Fig. 1A, it was confirmed that the residue of the resin layer 1 was completely clean on the surface of the stone plate. [Comparative Example 1] (Production of varnish of resin layer 1) A varnish similar to that of Experimental Example 1 was produced. (test)

㈣ΐ 8时石夕晶圓之上，旋塗塗佈構成樹脂層1的清漆，於12〇°C ίίΐ = 1藉此可形成厚度5μηι之樹脂層1。其次，將附有 =曰層1之8对石夕晶_割成7mmx7mm四方之附有樹脂層k it又丄樹脂|1係如第5實施形態之具有用於將半導體晶圓 〃基材固定所需之足夠黏著性者。 触ί+ΪΪ於樹脂層1照射1線，使曝光量成為以嶋/咖2，之 後將咖層1及雜放人容H 5之中，於&amp;氣氛圍下(未減壓、容 95 201233560 器5内之氣壓與大氣壓相等)於200°C加熱3分鐘。 之後從容器5取出矽板，以目視觀察矽板之表面(形成有樹脂 層1之侧之面）。如圖10所示，矽板之表面確認形成了薄薄的膜^ 此據認為是樹脂層1的殘渣。 · [比較實驗例2] (樹脂層1之清漆之製作） 製作與實驗例2同樣的清漆。 (測試） 在8时石夕晶圓上旋塗塗佈構成樹脂層1之清漆，於12〇。匚使乾 燥5分鐘。藉此，可形成厚度5μιη之樹脂層丨。其次，將附有樹L 脂層1之8吋矽晶圓切割成7mmx7mm四方的附有樹脂層^的矽 板。又，樹脂層1係如前述實施形態為具有用於將半^ 基材固定所需之足夠黏著性者。 … 其次，將樹脂層1及矽板放入容器5之中，於氮 減壓、容H 5内之賴與大氣壓蝴，於峨力鐘下。(未 声1 板’以目織察純之表_成有樹脂 曰1之側之面)。如圖10所示，確認在矽板之表面形 此據認為係樹脂層1的殘潰。 f ' 、 【產業上利用性】 2明由於在再配置型之電子裝置之製造步驟中，不會發生 即使i殘且密封材或電子零件不易發生破損，再者 之製ι方:ΐ 贿地去除’故可理想地使使用在電子震置 包含該電子裝置之製造方法之電子裝置封裳ίΐ 高;性之i子方法能提供高可靠性之電子裝置、及 裝置體。再者’本發明由於可以減少轉體 用在半ΐίί置之之樹脂層之殘渣量，故可理想地使 【圖式簡單說明】 圖1顯示本發明之第1、3實施形狀該電子裝置封裝體之- 96 201233560 實施②，意蜒剖面圖。 體之製造=本㈣之第1、3實施祕找電找置封裝 圖％), :忍縱剖面圖。 ^^^4 1'3獅雜之魏子裝置封裝 體之製造第1、3實施形態之該電子裝置封教 圖 5(A)、m、 ✓ \ -fc-r j j 製造步驟之立體圖。 N 示本翻之第5實施雜之辭導體裝置之製造步舉 造步驟之立體(ί)顯示本發明之第5實施形態之該半導體裝置t 製造步驟齡本發社&quot;實卿態之料導體裝置之 立圖顯示本發明之第5實施形態之該半導體裝置之 圖9顯不習知之半導體裝置之製造步驟。 圖1〇顯示實驗例、比較實驗例之結果。 【主要元件符號說明】 1熱分解性之樹脂層 2半導體晶圓 3基材 4疊層體 5容器 10電子裝置封裝體 11半導體晶片 12機能面 13密封部 14第1絕緣層 15貫孔 16導體層 97 201233560 17 第2絕緣層 18 凸塊 19 配線電路 20插入件 30電子裝置 41 具有端子之面 50支持基板 60固定樹脂層 70密封材層 80 電子零件配置密封材硬化物 90 第1絕緣層 91 開口部 92 導電層 93 導電體 100抗蚀劑層 110第2絕緣層 111 開口部 900層 901黏著層 902施體基板 98(4) On the 8th Shishi wafer, the varnish constituting the resin layer 1 is spin-coated, and the resin layer 1 having a thickness of 5 μm is formed at 12 ° C ίί ΐ = 1. Next, 8 pairs of Shi Xijing with the 曰 layer 1 are cut into 7mm x 7mm squares with a resin layer k 丄 丄 resin|1 series according to the fifth embodiment for fixing the semiconductor wafer 〃 substrate The amount of adhesive that is needed is sufficient. Touch ΪΪ+ 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂201233560 The pressure in the device 5 is equal to the atmospheric pressure) and is heated at 200 ° C for 3 minutes. Thereafter, the seesaw was taken out from the container 5, and the surface of the seesaw (the side on the side where the resin layer 1 was formed) was visually observed. As shown in Fig. 10, it was confirmed that a thin film was formed on the surface of the raft, which is considered to be a residue of the resin layer 1. [Comparative Example 2] (Preparation of varnish of resin layer 1) A varnish similar to Experimental Example 2 was produced. (Test) The varnish constituting the resin layer 1 was spin-coated on the Shishi wafer at 8 o'clock. Allow to dry for 5 minutes. Thereby, a resin layer 厚度 having a thickness of 5 μm can be formed. Next, the 8 吋矽 wafer with the tree L lipid layer 1 was cut into a 7 mm x 7 mm square resin plate with a resin layer. Further, the resin layer 1 has a sufficient adhesiveness for fixing a half substrate as in the above embodiment. Next, the resin layer 1 and the enamel plate are placed in the container 5, and the nitrogen is depressurized, and the inside of the H 5 and the atmospheric pressure are placed under the force of the force. (Unsounded 1 board' is woven into the pure table _ into the side of the resin 曰1). As shown in Fig. 10, it was confirmed that the surface of the seesaw was considered to be the residue of the resin layer 1. f ' , [Industrial Applicability] 2Because in the manufacturing steps of the reconfigurable electronic device, even if i is not damaged and the sealing material or the electronic component is not easily damaged, the other method is: The removal means that the electronic device using the manufacturing method including the electronic device in the electronic shock can be desirably used to provide high reliability electronic devices and device bodies. Furthermore, the present invention is advantageous in that it can reduce the amount of residue of the resin layer used for the transfer of the film, and therefore, it is desirable to make a simple description of the drawings. FIG. 1 shows the first and third embodiments of the present invention. Body - 96 201233560 Implementation 2, Italian profile. Manufacturing of the body = the first and third implementations of this (4) to find the electricity to find the package Figure %), : Endure longitudinal section. ^^^4 1'3 The production of the electronic device package of the first and third embodiments of the manufacture of the lion's device package Fig. 5(A), m, ✓ \ -fc-r j j The perspective view of the manufacturing steps. N shows the fifth embodiment of the manufacturing process of the conductor device. The third embodiment of the present invention shows the semiconductor device t of the fifth embodiment of the present invention. The vertical view of the conductor device shows the manufacturing steps of the semiconductor device which is not known in FIG. 9 of the semiconductor device according to the fifth embodiment of the present invention. Fig. 1A shows the results of experimental examples and comparative experimental examples. [Description of main component symbols] 1 Thermally decomposable resin layer 2 Semiconductor wafer 3 Substrate 4 Laminate 5 Container 10 Electronic device package 11 Semiconductor wafer 12 Functional surface 13 Sealing portion 14 First insulating layer 15 Through hole 16 Conductor Layer 97 201233560 17 Second insulating layer 18 Bump 19 Wiring circuit 20 Insert 30 Electronic device 41 Surface having terminal 50 Supporting substrate 60 Fixing resin layer 70 Sealing material layer 80 Electronic component arranging sealing material cured material 90 First insulating layer 91 Opening portion 92 conductive layer 93 conductor 100 resist layer 110 second insulating layer 111 opening portion 900 layer 901 adhesive layer 902 donor substrate 98

Claims (1)

201233560 七、申請專利範圍： 1. -種電子裝置之製造方法，包含以下步驟. 固定樹脂層軸步驟，在支縣材之表面設· 電子零件m定步驟，以使得彼此轉的電子 門^門 隙的方式’在該固定樹脂層上配置多數電子 === 定樹脂層將該電子零件固定在該支持基材上；並且iw該固 密封㈣形成频’以㈣材婦該電子零件 月Θ層及該電子零件上使密封材層形成； Μ固疋树 密封材硬化步驟’藉由將該密封材加埶，以 持基材所支持且配置有該電子零件之電她置密 硬持持基材所支持之該電子零件配置密封材 其特徵為： 材線後於=:層 材硬化物從該支持基材剝離。 V件配置饴封 2·如申請專利範圍第1項之電子裝置t制 中，i該ιΓ離之電子裝置之製造方法，其 二肩彳日層馳之溫度為13G〜20(rc。 方蛋^請專利範圍第1至3項中任一項之電子裝置之 ⑽。=層於該活性能量射線照射後， 田〜士種電子裝置之製造方法，包含以下步驟： =疋树脂層形成步驟，在支持基材 電子零件固定步驟，以使得彼疋树月曰層； 隙的方式，在該固定^旨戶零件之間形成間 定樹脂層將該電子零件固定在該支持基ίΐ零件，並且隔著該固 99 201233560 脂層覆輯子料，猶固定樹 材硬ΐ封所職密封 支持基材剝離； 冊錢子令件配置密封材硬化物從該 其特徵為： 活性=;========蚊麵層照射 件配置密珊硬錄额崎_，崎該電子零 6.如申請專利範圍第5項之電子震置之製造 糊咖離辣使細機旨树融之溫度為八 7·如申請專利範圍第5或6項之電子袭置之製造方法，並 ^ 脂狀該潍議賴概於峨之獅度為 、8.如申請專利範圍第1至7項中任一項之電子裝置之製造 f法’更包含配線層形成步驟，該步驟係在該電子零件配置密封 ^硬化物之配置有該電子零狀面戦配線層，並且獲得形成有 該配線層之電子零件配置密封材硬化物。 ^如中請專利範圍第8項之電子褒置之製造方法再者，更 W皁片化步驟’該步驟係藉由將該形成有配線層之該電子零件 配置密封材硬化㈣时割，而將郷成有配線層之該電子零件 配置密封材硬錄扣單;^化’崎得轉#化之該電子零件配 置密封材硬化物。 10. 如申請專利範圍第1至9項中任一項之電子裝置之製造 方法’其中，該固定樹脂層包含樹脂組成物，該樹脂組成物包含: =酸或鹼存在下之熔融黏度降低之樹脂成分;以及會由於該活性能 里射線照射而產生酸或驗之活性劑。 11. 如申請專利範圍第10項之電子裝置之製造方法，其中， 100 201233560 該樹脂成分為聚碳酸酯系樹脂。 兮取專利範圍第11項之電子裝置之製造方法，其中， =m糸樹脂係於礙酸成單元中至少包含2個環狀體而 電子裝置，其雜為:似如申請專利範圍第1至 12項中任一項之電子裝置之製造方法製作。 王 驟，置=體Sff 5特徵為:包含安裂步 配置密封她9 爾子零件 料利範圍第 種電子裴置之製造方法，包含以下步驟： 氣化^驟，將由包含藉由加熱以熱分解而溶融或 之表面供^使乾燥而設置固定樹脂層; 對支持基材 疋步驟，以使得彼此相義電子零件之間形成間 脂層；密覆該電子零件’在該固定樹 ㈣ίϊΐΐ化步驟’藉由加熱該密封材使該密封材硬化，獲得 、▲所支持且配置有該電子零件之電子零件配置密封材 硬化物； =步驟’藉由將該固定樹脂層加熱並使該樹脂成分 基材所佩謝零件配删材硬化物從該 其特徵為： 於該固定樹闕形成步驟巾，細餅2⑻。C之黏度為響a· s以上、10_pa · s以下之該固定樹脂層。 17.如申請專利範圍第16項之電子裝置之製造方法，其中， 101 201233560 巾，職€子轉 彼I接ί步驟中，對於該電子零件與該支持基材 彼匕接近之方向以0.05〜iMpa之壓力進行加壓。 19.如申請專利範圍第16至18項中任一項之 職峨形綱中，將職材加熱之^ 2α ^申請專職圍第16至19項中任—項之電子裝置之製 Ϊ持某材材層形成步驟中，對於财封劑層與該 支持基材舰接近之方向，則5〜12MPa之壓力進行加壓。 21. 如申請專利範圍第16至20項中任一項之 ΐίί产該固定樹脂層形成步驟中，該層係以、 平均知度為50〜l〇〇pm之厚度形成。 22. 一種電子裝置之製造方法，包含以下步驟. 裔仆ίίΪί,ί步驟’將由包含藉由加熱以熱分解而溶融或 乳化之樹月曰成为之樹脂組成物構成之暫時固定 之表面供給後使乾_設置岐樹脂層； 饮克持基材 、電子零件固定步驟，岐得彼此相鄰的電子零件 固定樹脂層上配置多數電子零件，並隔著該固i 樹月S層而將該電子零件固定於該支持基材上； 密封材層形成步驟，以密封材被覆該電子零件， 脂層及該奸零件上使密封制職； 在相疋祕 J封材硬化兼剝離步驟，藉由加熱該密封材使該密封材硬 化丄獲付由該支持基材所支持且配置有該電子零件之電子配 置密封材硬化物’同時’藉由將該固定樹脂層加 分熱電子零件配置密封材硬化物從該支持 具将徵為： 於該固定樹脂層形成步驟中，係形成於20(rc之黏度為10^· s以上、lOOOOPa · s以下之該固定樹脂層。 又’、、 · 102 201233560 23. 如申請專利範圍第16至22項中任一項之雷早奘詈之制 造方法’其中’該齡成分齡因為對_暫咖定身H 能量射線二，使It熱分解之溫度降低者，且在該剝離步驟之前先 對於該固疋树脂層照射該活性能量射線。 24. 如申請專利範_23項之電子裝置之製造方法，立中， 該樹脂成分係於酸或驗存在下時，該熱分解 :組成物更包含齡該活性能量射線之照射^ 25. 如申請專利範圍第Μ或2.4項之電子裝置之製造方法， 其中，該樹脂成分為聚碳酸酯系樹脂。 κί. 補㈣16至22射任—狀電子裝置之製 仏方法/、中’該树脂成分不因為對於該暫 量射線而使該熱分解之溫度降低。 节叫疋識射活I 該=成;^奴電子妓之魏方法，其中， 造方一項之電子裝置之製 封材硬化物之配置有該電子該電子零件配置密 該配線層之電子零件配置密i材硬化^。_層，並獲得形成有 含單2片9化4申請之製造方法’更包 置密封材硬化物予以分割，曰有配線層之該電子零件配 密封材硬錄予以單純，料層之該電子零件配置 材硬化物。 早片化―經早片化之該電子零件配置密封 30. 一種電子裝置封裝體之制;土古、土甘 、 驟，該步驟係將如巾請專概圍' 為具有安裝步 配置密封材硬化物安裴於基板。項之左皁片化之該電子零件 3L 一種半導體裴^之製造方法， 包含以下步驟： 將熱分解性之樹脂層配置於半導體嶋基材之間，隔著該 103 201233560 樹月曰層固疋该半導體晶圓與該基材並形成疊層體. 將該警層體之該半導體晶圓加工； ， 將該豐層體加熱而將該熱分解性之樹脂層予以熱分解而 化； 將該半導體晶圓與該基材予以分離； f於賴疊層體加熱⑽該熱分解性之翻旨層予以孰分 解=使观化之該步驟中，係藉由抽吸配置有該疊層體之ί器中之 H 器内之氣體氛圍成為減壓下，並於減壓下將該疊層 中ί料m範圍第31項之半導體裝置之製造方法，其 „ UUPa以下之乳體錢下加熱該疊層體。 冰，立中，上t利範圍第31或32項之半導體裝置之製造方 择伴:舊1本匕與半導體晶圓大致相同形狀之擬似晶圓，且 係保遵該+導體晶圓之熱分雕之樹脂層侧之面者。 34.如申請專利範圍第31至33項中任一項 之 中卿細旨瓣半输酸基獅成 兮车ίΐΐίΐϊί解性之樹脂層之樹脂組成物利用旋塗塗佈在 ΐ半導體Ιϋίϊί材上並形成該樹脂層，且隔著該樹脂層固定 、、:t· 3甘5士如胺中气專利範圍第33或34項之半體裝置之製造方 主道二二該$層體之該半導體晶81加111之該步驟中，係將該 半導體晶圓予以研磨。 36.如申5月專利範圍第31至35項中任一項之丰導體裝置之 sur該熱分解性之樹脂層包含選自於由聚碳酸醋系 t Γ、聚_請脂、聚邮齡樹脂、聚胺曱酸 δ曰糸樹月日、（曱基)㈣酸系樹脂構成之群組中丨種以上。 由申f專利範圍第36項之半導體裝置之製造方法，其 中’絲材為透明基材，且在將該疊層體之該半導體日3日圓加工之 104 201233560 該步驟、與將該疊層體加熱而將該熱分解性之声埶 而使氣化之該步驟之間，實施以下步驟.· a 隔著該疊層體之該透材，對_熱分解性之樹脂層 活性^量^由if該熱分解性之翻旨層之熱分解溫度降低。'、 製造方法 成分 二範圍第31至35項中任—項之轉辭置之 方法、中’該熱分解性之樹脂層係以降_梢^^ 105201233560 VII. Patent application scope: 1. The manufacturing method of the electronic device includes the following steps. The step of fixing the resin layer axis, and setting the electronic component in the surface of the branch material to make the electronic door of each other turn The manner of the gap 'distributing a plurality of electrons on the fixed resin layer === fixing the resin layer to fix the electronic component on the supporting substrate; and iw the solid sealing (four) forming the frequency 'to the fourth layer of the electronic component moon layer And forming a sealing material layer on the electronic component; the tamping eucalyptus sealing material hardening step 'by twisting the sealing material to hold the substrate and supporting the electronic component The electronic component arrangement sealing material supported by the material is characterized in that: the material line is after the =: the layer cured material is peeled off from the support substrate. V-component configuration 2 2 2 · In the electronic device t system of the first application of the patent scope, i the manufacturing method of the electronic device, the temperature of the two shoulders is 13G~20 (rc. [10] The electronic device of any one of the first to third aspects of the invention, wherein the layer is formed by the active energy ray, and the method for manufacturing the electronic device comprises the following steps: In the supporting substrate electronic component fixing step, in such a manner that the 疋 曰 曰 ; ; ; ; ; ; ; ; ; 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成The solid 99 201233560 grease layer overlay sub-material, the fixed tree material hard seal seals the seal support substrate peeling; the book money sub-piece configuration seal material hardened material from the characteristics of: active =; ==== ==== Mosquito surface illuminating part configuration Mishan hard recording Esaki _, Saki the electronic zero 6. If the application of the fifth scope of the electronic scope of the production of the paste, the temperature is the temperature of the fine machine VIII 7. If the manufacturer of the electronic attack on the 5th or 6th patent application area The method of manufacturing, and the method of manufacturing the electronic device according to any one of claims 1 to 7 further includes a wiring layer forming step, the step of which is The electronic component is provided with a sealing layer of the electronic component, and the electronic component sealing material is formed, and the electronic component is formed with the wiring layer. Further, in the manufacturing method, the W-sheeting step is performed by cutting the electronic component-arranged sealing material in which the wiring layer is formed by curing (4), and sealing the electronic component which is formed into the wiring layer. The method of manufacturing the electronic device of the electronic component of any one of claims 1 to 9 wherein the fixing is performed The resin layer comprises a resin composition comprising: = a resin component having a reduced melt viscosity in the presence of an acid or a base; and an acid or an active agent which is generated by irradiation of the active energy in the active energy. Scope 10 The method for producing a sub-device, wherein: 100 201233560 The resin component is a polycarbonate resin. The method for producing an electronic device according to claim 11, wherein the =m糸 resin is at least 2 in the acid-blocking unit. An annular device and an electronic device, which is produced by the manufacturing method of the electronic device as claimed in any one of claims 1 to 12. The method of setting the body to the body Sff 5 is as follows: Sealing the manufacturing method of the first electronic device of the material range of the nine parts, comprising the following steps: gasification, the fixing resin layer is provided by drying the surface by heating or dissolving by thermal decomposition; a step of supporting the substrate so as to form a grease layer between the electronic parts; and covering the electronic part 'in the fixed tree (4) etching step to harden the sealing material by heating the sealing material, obtaining ▲ The electronic component supported by the electronic component is provided with a cured material of the sealing material; = step 'by heating the fixing resin layer and appreciating the component of the resin component substrate The material hardened material is characterized in that: the fixed tree stalk is formed into a step towel, the fine cake 2 (8). The viscosity of C is such a fixed resin layer which is equal to or more than a·s and 10_pa·s or less. 17. The method of manufacturing an electronic device according to claim 16, wherein, in the step of contacting the electronic component and the support substrate, the direction of the electronic component is 0.05 to 0.05. The pressure of iMpa is pressurized. 19. In the job profile of any of the 16th to 18th patent applications, the heating of the job material ^ 2α ^ application for the electronic device of the full range of items 16 to 19 In the material layer forming step, the pressure of the sealant layer and the support substrate ship is pressurized at a pressure of 5 to 12 MPa. 21. In the step of forming the fixing resin layer according to any one of claims 16 to 20, the layer is formed with a thickness of 50 to 1 pm. 22. A method of manufacturing an electronic device comprising the steps of: a servant ίίΪί, 步骤 a step of supplying a temporarily fixed surface comprising a resin composition comprising a resin composition which is melted or emulsified by thermal decomposition by heating; Drying_setting the resin layer; holding the substrate and the electronic component fixing step, and arranging a plurality of electronic components on the electronic component fixing resin layer adjacent to each other, and the electronic component is separated by the solid layer Fixing on the supporting substrate; forming a sealing layer, sealing the electronic component with the sealing material, and sealing the grease layer and the smashing part; in the hardening and peeling step of the sealing material, by heating The sealing material hardens the sealing material to obtain an electronically disposed sealing material cured material supported by the supporting substrate and disposed with the electronic component, and at the same time, by adding the fixing resin layer to the hot electronic component arrangement sealing material hardening material In the fixing resin layer forming step, the fixing resin layer is formed at 20 (the viscosity of the rc is 10^·s or more and 1000 Pa·s or less). 102, 2012, 2012 2012. The method of manufacturing the thunder and smashing of any one of the 16th to 22nd patents of the patent application 'in which the age of the age is due to the _ temporary coffee set H energy ray two, make it hot The decomposition temperature is lowered, and the active energy ray is irradiated to the solid resin layer before the stripping step. 24. The manufacturing method of the electronic device according to claim 23, wherein the resin component is acid In the case of the presence or absence of the test, the thermal decomposition: the composition further comprises the irradiation of the active energy ray. 25. The method of manufacturing the electronic device according to the scope of the invention, wherein the resin component is a polycarbonate system. Resin. κί. Complementary (4) 16 to 22 shot-type electronic device manufacturing method /, 'The resin component is not because of the temporary radiation to reduce the temperature of the thermal decomposition. ; 奴 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ And get the shape There is a method for manufacturing a single-piece, two-piece, and four-part application, and the hardened material is divided into a sealed material, and the electronic component is sealed with a wiring layer, and the electronic component is cured. Early filming - the electronic component configuration seal 30. The system of electronic device package; the ancient, the soil, the step, the step will be like a towel, please configure the sealing material for the installation step. The hardened material is mounted on the substrate. The electronic component 3L of the left soap sheet is a method for manufacturing a semiconductor device, comprising the steps of: disposing a thermally decomposable resin layer between the semiconductor substrate and interposing the 103 201233560 The tree layer is fixed on the semiconductor wafer and the substrate to form a laminate. The semiconductor wafer of the police layer is processed; and the layered body is heated to apply the thermally decomposable resin layer Thermal decomposition; separation of the semiconductor wafer from the substrate; f heating of the laminate (10) decomposition of the thermally decomposable layer; decomposition of the step by vacuuming Configured with the laminate The gas atmosphere in the H device in the device is under reduced pressure, and the method for manufacturing the semiconductor device according to item 31 of the lamination in the lamination under reduced pressure is heated under the milk of UUPa Laminate. Ice, Lizhong, the manufacturer of the semiconductor device of the 31st or 32nd range of the T-Zone range: the old one is a pseudo-wafer of the same shape as the semiconductor wafer, and the heat of the +-conductor wafer is guaranteed The face of the resin layer on the side of the sculpture. 34. As claimed in any one of claims 31 to 33, the resin composition of the resin layer of the resin layer is applied by spin coating on the semiconductor material Ιϋ ϊ ϊ 材 材 材 材 材 材 材 材 材 材 材 上 树脂 树脂 树脂 树脂 树脂 树脂 树脂And forming the resin layer, and fixing the resin layer, the product of the semiconductor layer of the semiconductor device of the third or third half of the patent device is the second layer of the device. In the step of adding the semiconductor crystal 81 to 111, the semiconductor wafer is ground. 36. The heat-decomposable resin layer of any of the materials of the invention of any of the above-mentioned patents, wherein the thermal decomposition material layer is selected from the group consisting of polycarbonate, t-paste, poly-paste, poly-mailing age The resin, the polyamine niobic acid δ 曰糸 月 、, and the (曱) (iv) acid resin are grouped in the group. The method of manufacturing a semiconductor device according to claim 36, wherein the wire material is a transparent substrate, and the semiconductor film of the laminate is processed by a Japanese yen of 3, 2012,335,560, the step, and the laminate Between the steps of heating and decomposing the pyrolyzable gas, the following steps are carried out. a. The permeability of the resin layer of the thermal decomposition resin is interposed by the porous material of the laminate. If the thermal decomposition temperature of the thermal decomposition layer is lowered. ', manufacturing method component two range of items 31 to 35 of the term - the word of the method of the method, the middle of the thermal decomposition of the resin layer to reduce _ tip ^ ^ 105
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JP3500015B2 (en) * 1996-09-25 2004-02-23 三洋電機株式会社 Semiconductor device and manufacturing method thereof

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