JP5682280B2 - Manufacturing method of semiconductor element sealing body and manufacturing method of semiconductor package - Google Patents

Description

  The present invention relates to a method for manufacturing a sealed semiconductor element and a method for manufacturing a semiconductor package.

  With the remarkable development of the electronics industry in recent years, the degree of circuit integration in semiconductor elements has rapidly increased to transistors, ICs, LSIs, and super LSIs. For this reason, the size of the semiconductor element has been drastically increased from a long side of about several millimeters to a few ten millimeters. In addition, the number of pins that are electrically connected to the outside has exceeded 200 pins in order to increase the speed of semiconductor devices.

  Also, in the mounting of semiconductor devices, higher density and thinner are further accelerated. As a result, the semiconductor product itself is not only a conventional package represented by QFP (Quad Flat Package) but also BGA ( Surface mount type packages such as Ball Grid Array) have appeared, and the thickness of the package has been further reduced.

  Further, in order to increase the density of the semiconductor device without increasing the area occupied by the surface mount type package, a POP (Package On Package) type semiconductor device in which two or more surface mount type packages are stacked is used. Has been proposed.

  As a method for manufacturing a plurality of such surface-mount type packages at once, for example, as shown below, a substrate technology (EWLP; Embedded) in which a semiconductor element is sealed and embedded in a wafer level package (WLP). Wafer Level Package) has been proposed (see, for example, Patent Document 1).

  First, as shown in FIG. 11A, a dummy substrate 101 having an adhesive layer 102 provided on the upper surface is prepared, and a plurality of semiconductor elements 616 are formed on the dummy substrate 101 with the adhesive layer 102 interposed therebetween. The electrode pads (not shown) are placed so as to be on the dummy substrate 101 side.

  Next, as shown in FIG. 11B, sealing is performed by a sealing portion 617 so as to cover the semiconductor element 616 placed on the dummy substrate 101.

  Next, the adhesive layer 102 is subjected to a treatment such as heating to reduce its adhesive force, and the dummy substrate 101 is removed from the semiconductor element 616 and the sealing portion 617 as shown in FIG. A sealing body 610 sealed with a sealing portion 617 is obtained in a state where the semiconductor element 616 is exposed from one surface side (see FIG. 11D).

  Next, as illustrated in FIG. 12A, a first hole having a through hole 625 on the surface of the sealing body 610 where the semiconductor element 616 is exposed so that the electrode pad included in the semiconductor element 616 is exposed. A covering layer 615 is formed.

  Next, as shown in FIG. 12B, a conductor post 614 that is electrically connected to the electrode pad is formed in the through hole 625, and then the wiring 613 that is electrically connected to the conductor post 614 is connected to the first electrode 614. 1 coating layer 615 is formed.

  Next, as shown in FIG. 12C, a second coating layer having an opening 622 on the first coating layer 615 so that a region to be connected to a later-described bump 611 of the wiring 613 is exposed. 612 is formed.

  Next, as shown in FIG. 12D, bumps 611 that are electrically connected to the wiring 613 are formed in the opening 622, and the first coating layer 615 and the second coating layer 612 are formed. The sealing body 610 is cut into pieces by cutting in the thickness direction, and a plurality of packages 600 are collectively obtained.

  As described above, a plurality of packages (semiconductor packages) 600 can be manufactured in a lump. However, when obtaining a POP type semiconductor device in which surface mount type packages are stacked, in addition to this package 600, POP type In this semiconductor device, it is necessary to manufacture a package of a type in which a conductive column that can be electrically connected to the bump 611 of the package 600 disposed on the upper side is provided in the sealing portion.

  As for the package having such a configuration, like the package 600, there is a demand for a manufacturing method that can be manufactured collectively.

JP 2006-287235 A

  SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor element package that can manufacture a plurality of packages each having a semiconductor element and that can ensure electrical connection vertically, and that can manufacture the package with high reliability. An object of the present invention is to provide a method for manufacturing a stationary body and a method for manufacturing a semiconductor package.

Such an object is achieved by the present invention described in the following (1) to ( 10 ).
(1) Manufacture of a semiconductor element sealing body having a plurality of semiconductor elements having at least one electrode pad, a plurality of conductive pillars having conductivity, and a sealing portion for sealing the semiconductor elements and the conductor pillars A method,
A dummy substrate having a flat plate shape is prepared, and the semiconductor element is arranged on the dummy substrate so that the electrode pad is on the dummy substrate side, and a sacrifice containing a resin component that decomposes and vaporizes by heating. A semiconductor element disposing step of forming a layer corresponding to the shape of the conductor pillar at a position where the conductor pillar is to be formed;
A sealing portion that forms a sealing portion by sealing the dummy substrate, the semiconductor element, and the sacrificial layer on a surface on which the semiconductor element is disposed and the sacrificial layer is formed. Forming process;
A peeling step of peeling the dummy substrate from the sealing portion, the semiconductor element, and the sacrificial layer;
The sacrificial layer is removed by decomposing and vaporizing the resin component by heating to form a first through hole at a position where the conductive column of the sealing portion is to be formed. by forming the conductor post to one through-hole, and the conductor post forming step of obtaining the semiconductor element sealing material,
And a grinding / polishing step of grinding and / or polishing a surface of the sealing portion on which the conductor column is not exposed so that both ends of the conductor column are exposed. Manufacturing method of element sealing body.

( 2 ) In the semiconductor element arranging step, the sacrificial layer is formed on the dummy substrate with a liquid material containing a resin composition containing the resin component and an activator that generates active species upon irradiation with active energy rays. A first step of forming a thin film by supplying to the substrate and drying;
A second step of lowering the 50% weight loss temperature of the resin component by irradiating the active energy ray to the thin film located in a region where the sacrificial layer is not formed;
By passing through the third step of removing the thin film located in the region by heating the thin film and selectively decomposing and vaporizing the resin component contained in the thin film located in the region. The manufacturing method of the semiconductor element sealing body as described in said ( 1 ) formed.

( 3 ) In the sealing part forming step, the sealing part covers the dummy substrate , the semiconductor element, and the sacrificial layer in a state where the granular epoxy resin composition is melted. The semiconductor according to (1) or (2) , wherein the semiconductor is formed by compressing and molding the molten epoxy resin composition after being supplied to the surface on which the sacrificial layer is formed. Manufacturing method of element sealing body.

( 4 ) The method for manufacturing a sealed semiconductor element according to any one of (1) to ( 3 ), wherein in the conductor pillar forming step, the conductor pillar is formed by an electrolytic plating method.

( 5 ) A sheet material in which a plurality of second through holes are formed, a plurality of semiconductor elements disposed on the sheet material and having at least one electrode pad, and a plurality of conductive elements disposed on the sheet material. A method of manufacturing a semiconductor element sealing body having a conductor pillar and a sealing portion for sealing the semiconductor element and the conductor pillar,
A sacrificial material containing a resin component that is prepared as a flat sheet material, and the semiconductor element is disposed on the sheet material so that the electrode pad is on the sheet material side and is decomposed and vaporized by heating. A semiconductor element disposing step of forming a layer corresponding to the shape of the conductor pillar at a position where the conductor pillar is to be formed;
A sealing portion that forms a sealing portion by sealing the sheet material, the semiconductor element, and the sacrificial layer on a surface on which the semiconductor element is disposed and the sacrificial layer is formed. Forming process;
A through hole forming step of forming a plurality of second through holes in the thickness direction of the sheet material so as to correspond to the electrode pad and the sacrificial layer;
The sacrificial layer is removed by decomposing and vaporizing the resin component by heating to form a first through hole at a position where the conductive column of the sealing portion is to be formed. by forming the conductor post to one through-hole, and the conductor post forming step of obtaining the semiconductor element sealing material,
And a grinding / polishing step of grinding and / or polishing a surface of the sealing portion on which the conductor column is not exposed so that both ends of the conductor column are exposed. Manufacturing method of element sealing body.

( 6 ) A semiconductor element sealing body manufactured by the method for manufacturing a semiconductor element sealing body according to any one of (1) to ( 4 ), and a plurality of second through holes are formed in the thickness direction. A sheet material bonding step of bonding the sheet material to the semiconductor element sealing body so that the electrode pads and the conductor pillars correspond to the second through holes,
A conductor post forming step of forming a conductive post having conductivity in the second through hole;
A wiring forming step of forming a wiring electrically connected to the conductor post on the surface of the sheet material opposite to the semiconductor element sealing body;
A covering portion forming step of forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element sealing body;
The wire exposed at the opening, the bump connecting step of electrically connecting the bumps,
A method for manufacturing a semiconductor package, comprising: a step of individually obtaining a plurality of semiconductor packages by dividing the semiconductor element sealing body into pieces so as to correspond to each semiconductor element. .

( 7 ) Conductor post formation in which a semiconductor element sealing body manufactured by the method for manufacturing a semiconductor element sealing body according to ( 5 ) is prepared, and a conductive post having conductivity is formed in the second through hole. Process,
A wiring forming step of forming a wiring electrically connected to the conductor post on the surface of the sheet material opposite to the semiconductor element sealing body;
A covering portion forming step of forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element sealing body;
The wire exposed at the opening, the bump connecting step of electrically connecting the bumps,
A method for manufacturing a semiconductor package, comprising: a step of individually obtaining a plurality of semiconductor packages by dividing the semiconductor element sealing body into pieces so as to correspond to each semiconductor element. .

( 8 ) In the said conductor post formation process, the said conductor post is a manufacturing method of the semiconductor package as described in said ( 6 ) or ( 7 ) formed by the electrolytic plating method.

( 9 ) The method of manufacturing a semiconductor package according to any one of ( 6 ) to ( 8 ), wherein in the wiring formation step, the wiring is formed by an electrolytic plating method.

( 10 ) The method for manufacturing a semiconductor package according to any one of ( 6 ) to ( 9 ), wherein the conductor post and the bump are formed at different positions in the surface direction of the sheet material.

  According to the present invention, it is possible to manufacture a plurality of semiconductor packages including a semiconductor element and a conductive pillar that can be electrically connected up and down.

  Furthermore, a highly reliable semiconductor package can be obtained by adopting a configuration in which the semiconductor element to be arranged is selected as a non-defective product by performing an evaluation test in advance.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device provided with the semiconductor package manufactured by the manufacturing method of the semiconductor package of this invention. It is a longitudinal cross-sectional view which shows each semiconductor package with which the semiconductor device shown in FIG. 1 is provided. It is a longitudinal cross-sectional view for demonstrating 1st Embodiment of the manufacturing method of the semiconductor package which manufactures the semiconductor package which has a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating 1st Embodiment of the manufacturing method of the semiconductor package which manufactures the semiconductor package which has a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating 1st Embodiment of the manufacturing method of the semiconductor package which manufactures the semiconductor package which has a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating the method of forming a sealing part. It is a longitudinal cross-sectional view for demonstrating the method of forming a sealing part. It is a longitudinal cross-sectional view for demonstrating 2nd Embodiment of the manufacturing method of the semiconductor package which manufactures the semiconductor package which has a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating 2nd Embodiment of the manufacturing method of the semiconductor package which manufactures the semiconductor package which has a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating 2nd Embodiment of the manufacturing method of the semiconductor package which manufactures the semiconductor package which has a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating the method to manufacture several semiconductor packages which do not have a conductor pillar collectively. It is a longitudinal cross-sectional view for demonstrating the method to manufacture several semiconductor packages which do not have a conductor pillar collectively.

  Hereinafter, the manufacturing method of the semiconductor element sealing body of the present invention and the manufacturing method of the semiconductor package of the present invention will be described in detail based on preferred embodiments shown in the accompanying drawings.

  First, prior to describing a method for manufacturing a sealed semiconductor element according to the present invention and a method for manufacturing a semiconductor package according to the present invention, a semiconductor device including the semiconductor package manufactured by the method for manufacturing a semiconductor package according to the present invention will be described. To do.

<Semiconductor device>
FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device provided with a semiconductor package manufactured by the semiconductor package manufacturing method of the present invention, and FIG. 2 is a longitudinal sectional view showing each semiconductor package provided in the semiconductor device shown in FIG. It is. In the following description, the upper side in FIGS. 1 and 2 is referred to as “upper” and the lower side is referred to as “lower”.

  A semiconductor device 30 shown in FIG. 1 is a POP (Package On Package) type semiconductor device, which includes two packages 20 and one package 10. The two packages 20 are stacked, and the upper The package 10 is stacked on the package 20.

  As shown in FIG. 2A, the package (semiconductor package) 10 includes an interposer (substrate) 15 having a through-hole 151 penetrating in the thickness direction, and a semiconductor element (die) disposed on the interposer 15. 16, a sealing part (mold part) 17 for sealing the semiconductor element 16, a conductor post 14 provided in the through hole 151, a wiring 13 electrically connected to the conductor post 14, and a wiring 13 Bumps (terminals) 21 connected to each other, and a covering portion 12 provided so as to cover the wiring 13 and expose the bump 21.

  The interposer (substrate) 15 is a substrate that supports the semiconductor element 16, and its planar view shape is usually a square such as a square or a rectangle. The interposer 15 is formed with a plurality of (two in the present embodiment) through-holes (through-holes) 151 penetrating in the thickness direction.

  The semiconductor element 16 has an electrode pad (not shown) on the lower surface side, and this electrode pad is disposed on the interposer 15 so as to correspond to the through hole 151.

  In a state where the semiconductor element 16 is disposed at such a position, the sealing portion 17 is formed so as to cover almost the entire upper surface side of the semiconductor element 16 and the interposer 15.

  A conductor post 14 is provided in the through hole 151, and the conductor post 14 is electrically connected to an electrode pad included in the semiconductor element 16 at an upper end thereof.

  A wiring 13 formed in a predetermined shape is provided on the lower surface of the interposer 15, and a part of the wiring 13 is electrically connected to the lower end of the conductor post 14.

  Further, the bump 21 is electrically connected to the lower surface of the wiring 13, whereby the semiconductor element 16 and the bump 21 are electrically connected via the electrode pad, the conductor post 14 and the wiring 13. .

  And the coating | coated part 12 provided with the opening part 121 for exposing the bump 21 from the lower side is provided so that the wiring 13 may be coat | covered.

  The package (semiconductor package) 20 includes the conductive pillars 28 and can be electrically connected to the top and bottom thereof. As shown in FIG. 2B, the semiconductor element (die) 26 and the conductive pillars 28 , An interposer provided with a sealing part (mold part) 27 for sealing the semiconductor element 26 and the conductor pillar 28, and a second through hole 251 penetrating in the thickness direction, which is disposed above and below the sealing part 27, respectively. (Substrate) 25, conductor post 24 provided in second through hole 251, wiring 23 electrically connected to conductor post 24, and bump (terminal) 21 electrically connected to wiring 23, And a covering portion 22 provided so as to cover the wiring 23 and expose the bump 21.

  In the package 20 having such a configuration, the interposer 25, the conductor post 24, the wiring 23, the bump 21 and the covering portion 22 are provided on both the upper side and the lower side of the sealing portion 27, respectively. Ensuring conduction (electrical connection) at the top and bottom becomes possible.

  The interposer 25 is a substrate that holds the semiconductor element 26 and the conductor column 28 by the two interposers 25, and the planar view shape thereof is generally a square such as a square or a rectangle, like the interposer 15. The interposer 25 is formed with a plurality of through holes (through holes) 251 (three in the lower interposer 25 and two in the upper interposer 25) penetrating in the thickness direction.

  The semiconductor element 26 and the conductor column 28 respectively correspond to the second through-hole 251 on the upper surface side, and further, the electrode pad and the conductor column provided on the lower surface side of the semiconductor element 26 on the lower surface side. 28 is sandwiched between the two interposers 25 so as to correspond to the second through holes 251.

  In a state where the semiconductor element 26 and the conductor pillar 28 are disposed at such a position, the sealing portion 27 is provided so as to fill a space formed by the two interposers 25. By forming such a sealing portion 27, the conductor column 28 is exposed from the sealing portion 27 at the upper and lower end portions thereof, and the semiconductor element 26 is provided at the lower end of the sealing portion 27 in the electrode pad. The structure exposed from the part.

  Each of the second through holes 251 is provided with a conductor post 24, and the conductor post 24 is electrically connected to an electrode pad or a conductor column 28 included in the semiconductor element 16 at one end thereof.

  Further, on the surface opposite to the sealing portion 27 of both interposers 25, a wiring 23 formed in a predetermined shape is provided, and a part of the wiring 23 is electrically connected to the other end portion of the conductor post 24. The

  Further, the bump 21 is electrically connected to the surface of the wiring 23 opposite to the conductor post 24, whereby the semiconductor element 26 and the bump 21 are connected via the electrode pad, the conductor post 24 and the wiring 23. Are electrically connected. In addition, the conductor column 28 and the bump 21 are electrically connected via the conductor post 24 and the wiring 23.

  A covering portion 22 having an opening 221 for exposing the bump 21 is provided so as to cover the wiring 23.

  In the semiconductor device 30 including the one package 10 and the two packages 20 having the above-described configuration, each of the packages 10 and 20 is connected through the bumps 21, whereby one semiconductor element 16 and two semiconductors are connected. Each element 26 is electrically connected.

  In the semiconductor device 30 having such a configuration, the package 10 and the package 20 each including the semiconductor element 16 and the semiconductor element 26 having different functions are stacked, and the degree of freedom of combination of the packages (semiconductor elements) is high and versatility. It has the advantage of being high.

  In the semiconductor device 30 described above, the package 10 includes the interposer 15. However, instead of this, the package 10 may include a covering portion having the same insulating property as the covering portion 12. Similarly, the package 20 may be configured by a covering portion having the same insulating property as the covering portion 22 instead of the interposer 25.

  In the semiconductor device 30 as described above, one package 10 and two packages 20 are prepared, and the bumps 21 that are in contact with each other in a state in which the package 10 is arranged on the upper package 20 of the two stacked packages 20. The semiconductor package manufacturing method of the present invention is applied to the manufacture of the package 20 out of the package 10 and the package 20.

<Semiconductor package manufacturing method>
Hereinafter, a manufacturing method of the package 20 to which the manufacturing method of the semiconductor package of the present invention is applied will be described in detail.

<First Embodiment>
First, a first embodiment of a manufacturing method for manufacturing the package 20 will be described.
That is, in the first embodiment of the manufacturing method of the package 20, a flat dummy substrate is prepared, and the semiconductor element is arranged on the dummy substrate so that the electrode pads are on the dummy substrate side and heated. Forming a sacrificial layer containing a resin component that decomposes and vaporizes at a position corresponding to the shape of the conductor pillar at a position where the conductor pillar is to be formed, and a semiconductor element is disposed and a sacrificial layer is formed A sealing part forming step for sealing the dummy substrate, the semiconductor element and the sacrificial layer so as to cover the dummy substrate, the semiconductor element and the sacrificial layer, and forming the sealing part from the sealing part, the semiconductor element and the sacrificial layer. After the first through hole is formed at the position where the conductive pillar of the sealing portion is to be formed by removing the sacrificial layer by heating and removing the resin component by decomposing and vaporizing it. This first through hole A conductor column forming step for obtaining a semiconductor element sealing body by forming a conductor column and a sheet material in which a plurality of second through holes are formed in the thickness direction are prepared, and an electrode pad is provided in each second through hole A sheet material bonding step of bonding a sheet material to the semiconductor element sealing body, a conductor post forming step of forming a conductive post having conductivity in the second through hole, and a sheet material so that the conductor pillars correspond to each other A wiring forming process for forming wiring electrically connected to the conductor post on the surface opposite to the semiconductor element sealing body, and a part of the wiring is exposed on the surface opposite to the semiconductor element sealing body In order to correspond to each semiconductor element, a covering portion forming step for forming a covering portion having an opening portion, a bump connecting step for electrically connecting a bump to the wiring exposed in the opening portion, and a semiconductor By separating the element sealing body into individual pieces , And a singulation process may collectively a plurality of semiconductor packages.

  3 to 5 are longitudinal sectional views for explaining a first embodiment of the semiconductor package manufacturing method of the present invention for manufacturing a plurality of semiconductor packages 20 having conductor pillars 28 in a lump. FIGS. FIG. 5 is a longitudinal sectional view for explaining a method of forming a sealing portion 27. In the following description, the upper side in FIGS. 3 to 7 is referred to as “upper” and the lower side is referred to as “lower”.

  [1] First, as shown in FIG. 3A, a flat dummy substrate 101 having an upper surface provided with an adhesive layer 102 is prepared, and a plurality of semiconductors are formed on the dummy substrate 101 via the adhesive layer 102. The element 26 is disposed (placed) so that an electrode pad (not shown) of the element 26 is on the dummy substrate 101 side, and a sacrificial layer 38 containing a resin component that decomposes and vaporizes by heating is formed. The conductor pillar 28 is formed at a position where the conductor pillar 28 is to be formed, corresponding to the shape of the conductor pillar 28 (semiconductor element arranging step).

Hereinafter, this step will be described in detail.
[1-1] First, a flat dummy substrate 101 having an adhesive layer 102 provided on the upper surface is prepared.

  The dummy substrate 101 only needs to have a hardness that can support the semiconductor element 26 and the sacrificial layer 38, such as a core substrate composed of a core material, a build-up substrate composed of a build-up material, and the like. Either a rigid substrate (hard substrate) or a flexible substrate (flexible substrate) may be used, and among these, a build-up substrate is particularly preferable. A build-up substrate is preferably used because it is particularly excellent in processability.

  Although it does not specifically limit as a core board | substrate, For example, what is mainly comprised with thermosetting resins, such as cyanate resin, an epoxy resin, a bismaleimide-triazine resin, etc. are mentioned. Among these, those composed mainly of cyanate resin are preferably used. The dummy substrate 101 made of such a constituent material has excellent mechanical strength.

  The build-up material is not particularly limited, but for example, curing a resin composition containing a thermosetting resin such as a phenol resin, a urea resin, a melamine resin, and an epoxy resin, a curing agent, and an inorganic filler. The thing comprised as a main material is mentioned.

  As the dummy substrate 101, a metal substrate or a glass substrate can be used in addition to the above-described core substrate and build-up substrate.

  The adhesive layer 102 has a function for adhering the dummy substrate 101, the semiconductor element 26, and the sacrificial layer 38, and peels off the semiconductor element 26 and the sacrificial layer 38 from the dummy substrate 101 in a subsequent step [3]. It has a function.

  As such an adhesive layer 102, for example, an adhesive layer that includes a thermally decomposable resin component that is thermally decomposed by heating of the adhesive layer 102 can be used.

  Such an adhesive layer 102 is preferably composed mainly of a thermally decomposable resin component. In particular, when the adhesive layer 102 contains a solvent, the thermally decomposable resin with respect to the total amount excluding the solvent. The component is preferably contained in an amount of 50 wt% or more.

  Further, the thermally decomposable resin component is not particularly limited as long as it is thermally decomposed by heating the adhesive layer 102. For example, polycarbonate resin, polyacetal resin, polyester resin, polyamide Resin, polyimide resin, polyether resin, polyurethane resin, (meth) acrylate resin and the like. Among these resin components, in order to effectively shorten the thermal decomposition time of the adhesive layer 102 in the post-process [4], it is preferable to use a polycarbonate-based resin as a main component.

  In addition, the resin composition which comprises the contact bonding layer 102 may be comprised only from 1 type of resin components, and may contain 2 or more types of resin components. In the present specification, the material constituting the adhesive layer 102 is also referred to as a resin composition when it is composed of one kind of resin component.

  Although it does not specifically limit as a polycarbonate-type resin, For example, a polypropylene carbonate resin, a polyethylene carbonate resin, 1, 2- polybutylene carbonate resin, 1, 3- polybutylene carbonate resin, 1, 4- polybutylene carbonate resin, cis- 2,3-polybutylene carbonate resin, trans-2,3-polybutylene carbonate resin, α, β-polyisobutylene carbonate resin, α, γ-polyisobutylene carbonate resin, cis-1,2-polycyclobutylene carbonate resin, trans-1,2-polycyclobutylene carbonate resin, cis-1,3-polycyclobutylene carbonate resin, trans-1,3-polycyclobutylene carbonate resin, polyhexene carbonate resin, Lopropene carbonate resin, polycyclohexene carbonate resin, 1,3-polycyclohexane carbonate resin, poly (methylcyclohexene carbonate) resin, poly (vinylcyclohexene carbonate) resin, polydihydronaphthalene carbonate resin, polyhexahydrostyrene carbonate resin, polycyclohexane Propylene carbonate resin, polystyrene carbonate resin, poly (3-phenylpropylene carbonate) resin, poly (3-trimethylsilyloxypropylene carbonate) resin, poly (3-methacryloyloxypropylene carbonate) resin, polyperfluoropropylene carbonate resin, poly Norbornene carbonate resin, polynorbornane carbonate resin, exo-polynorbornene carbonate Examples thereof include nate resins, endo-polynorbornene carbonate resins, trans-polynorbornene carbonate resins, cis-polynorbornene carbonate resins, and combinations thereof.

  Examples of the polycarbonate resin include polypropylene carbonate / polycyclohexene carbonate copolymer, 1,3-polycyclohexane carbonate / polynorbornene carbonate copolymer, poly [(oxycarbonyloxy-1,1,4,4- Tetramethylbutane) -alt- (oxycarbonyloxy-5-norbornene-2-endo-3-endo-dimethane)] resin, poly [(oxycarbonyloxy-1,4-dimethylbutane) -alt- (oxycarbonyloxy -5-norbornene-2-endo-3-endo-dimethane)] resin, poly [(oxycarbonyloxy-1,1,4,4-tetramethylbutane) -alt- (oxycarbonyloxy-p-xylene)] Resin and poly [(oxycarbo Ruoxy-1,4-dimethylbutane) -alt- (oxycarbonyloxy-p-xylene)] resin, 1,3-polycyclohexane carbonate resin / exo-polynorbornene carbonate resin, 1,3-polycyclohexane carbonate resin / endo -Polynorbornene carbonate resin etc. are mentioned.

  Furthermore, as the polycarbonate-based resin, in addition to the above, a polycarbonate resin having at least two cyclic bodies in the carbonate constituent unit can also be used.

  The number of cyclic bodies may be two or more in the carbonate structural unit, but is preferably 2 to 5, more preferably 2 or 3, and further preferably 2. By including such a number of annular bodies as the carbonate structural unit, the adhesion between the dummy substrate 101 and the semiconductor element 26 and the conductor column 28 becomes excellent.

  In addition, the plurality of cyclic bodies may have a linked polycyclic structure in which the vertices are connected to each other, but a condensed polycyclic structure in which the sides of each ring are connected to each other. It is preferable. Thereby, it is possible to satisfy both the heat resistance in the step [2] of forming the sealing portion 27 and the thermal decomposition time of the adhesive layer 102.

  Furthermore, it is preferable that each of the plurality of cyclic bodies is a 5-membered ring or a 6-membered ring. Thereby, since the planarity of a carbonate structural unit is maintained, the solubility with respect to a solvent can be stabilized more.

  Such a plurality of cyclic bodies are preferably alicyclic compounds. When each cyclic body is an alicyclic compound, the effects as described above are more remarkably exhibited.

  In consideration of these, in the polycarbonate resin, as the carbonate structural unit, for example, a structure represented by the following chemical formula (1X) is a particularly preferable structure.

  In addition, the polycarbonate-type resin which has a carbonate structural unit represented by the said Chemical formula (1X) can be obtained by the polycondensation reaction of decalin diol and carbonic acid diester like diphenyl carbonate.

  In the carbonate structural unit represented by the chemical formula (1X), those derived from the carbon atom linked to the hydroxyl group of decalin diol are each decalin (that is, two cyclic bodies forming a condensed polycyclic structure). It is preferable that three or more atoms intervene between the carbon atoms that are bonded to the carbon atoms constituting and bonded to these hydroxyl groups. Thereby, the decomposability | decomposability of a polycarbonate-type resin can be controlled, As a result, both heat resistance in process [2] which forms the sealing part 27 and shortening of the thermal decomposition time of the contact bonding layer 102 can be made compatible. Furthermore, the solubility with respect to a solvent can be stabilized more.

  Examples of such a carbonate structural unit include those represented by the following chemical formulas (1A) and (1B).

  Further, the plurality of cyclic bodies may be alicyclic compounds or may be heteroalicyclic compounds. Even when each cyclic body is a heteroalicyclic compound, the effects as described above are more remarkably exhibited.

  In this case, in the polycarbonate resin, as the carbonate structural unit, for example, one represented by the following chemical formula (2X) is a particularly preferable structure.

  In addition, the polycarbonate-type resin which has a carbonate structural unit represented by the said Chemical formula (2X) can be obtained by the polycondensation reaction of ether diol represented by the following Chemical formula (2a), and carbonic acid diester like diphenyl carbonate.

  In the carbonate structural unit represented by the chemical formula (2X), the carbon atom derived from the hydroxyl group of the cyclic ether diol represented by the chemical formula (2a) forms the cyclic ether (that is, a condensed polycyclic structure). It is preferable that three or more atoms are interposed between these carbon atoms and bonded to the carbon atoms constituting the two cyclic bodies. Thereby, it is possible to satisfy both the heat resistance in the step [2] of forming the sealing portion 27 and the thermal decomposition time of the adhesive layer 102. Furthermore, the solubility with respect to a solvent can be stabilized more.

  Examples of such a carbonate structural unit include those of the 1,4: 3,6-dianhydro-D-sorbitol (isosorbide) type represented by the following chemical formula (2A), and those represented by the following chemical formula (2B). 4: 3,6-dianhydro-D-mannitol (isomannide) type.

  The weight-average molecular weight (Mw) of the polycarbonate-based resin is preferably 1,000 to 1,000,000, and more preferably 5,000 to 800,000. By setting the weight average molecular weight to the above lower limit or more, the wettability with respect to the dummy substrate 101 can be improved, and further, the film forming property can be improved. Moreover, the effect of improving the solubility with respect to various solvents and also the thermal decomposition property of the contact bonding layer 102 can be acquired by setting it as the said upper limit or less.

  The polymerization method of the polycarbonate-based resin is not particularly limited. For example, a known polymerization method such as a phosgene method (solvent method) or a transesterification method (melting method) can be used.

  The resin component is preferably blended at a ratio of 10 wt% to 100 wt% of the total amount constituting the adhesive layer 102 (the total amount excluding the solvent if a solvent is included). More preferably, it is blended at a ratio of 50 wt% or more, particularly 80 wt% to 100 wt%. By setting it to 10 wt% or more, especially 80 wt% or more, there is an effect that the residue after thermally decomposing the adhesive layer 102 can be reduced. Moreover, there is an effect that the adhesive layer 102 can be thermally decomposed in a short time by increasing the resin component of the adhesive layer 102.

  Usually, the sealing temperature of the sealing portion 27 is around 125 ° C., and the temperature at which the sealing portion 27 is post-cured (post-cured) is around 175 ° C. Therefore, it is difficult to thermally decompose the resin component at around 125 ° C. A resin component that thermally decomposes at around 175 ° C. is preferable. Thereby, in the process of sealing the sealing part 27, peeling and deformation | transformation of the contact bonding layer 102 can be suppressed.

  As the resin component, polypropylene carbonate, 1 is particularly preferable because it is difficult to thermally decompose at the temperature sealed by the sealing portion 27 and is excellent in thermal decomposability above the temperature sealed by the sealing portion 27. , 4-polybutylene carbonate, 1,3-polycyclohexane carbonate / polynorbornene carbonate copolymer.

  Further, the thermally decomposable resin component is at least one of polycarbonate resin, polyacetal resin, polyester resin, polyamide resin, polyimide resin, polyether resin, polyurethane resin, and (meth) acrylate resin. In the case where it is included, the material constituting the adhesive layer 102 is preferably a resin composition containing a photoacid generator in addition to the resin component. Thereby, the thermal decomposition temperature of the adhesive layer 102 can be lowered by exposing the adhesive layer 102 (thermally decomposable resin component). After sealing the semiconductor element 26 and the conductive column 28 with the sealing portion 27, the temperature at which the thermal decomposition occurs can be reduced by exposing the adhesive layer 102. Therefore, thermal damage due to the thermal history of the semiconductor element sealing body 270 can be prevented, and furthermore, the semiconductor element sealing body 270 can be peeled off at the same time as the sealing portion 27 is post-cured. Is more preferable.

Here, the mechanism by which the thermal decomposition temperature decreases when a polypropylene carbonate resin, which is a polycarbonate resin, is used as the resin component will be described. As shown by the following formula (1Y), first, H ⁺ derived from the photoacid generator protonates the carbonyl oxygen of the polypropylene carbonate resin, and further transitions the polar transition state to an unstable tautomeric intermediate [A ] And [B]. Next, the thermal decomposition temperature of the intermediate [A] is lowered because thermal cleavage that fragmentes as acetone and CO ₂ occurs. In addition, the intermediate [B] produces propylene carbonate, and propylene carbonate forms a thermal ring-closing structure that is fragmented as CO ₂ and propylene oxide, so that the thermal decomposition temperature is lowered.

  The photoacid generator is not particularly limited as long as it is a compound that generates an acid upon irradiation with actinic radiation, and examples thereof include nucleophilic halides and complex metal halide anions. More specifically, tetrakis (pentafluorophenyl) borate-4-methylphenyl [4- (1-methylethyl) phenyl] iodonium (DPI-TPFPB), tris (4-t-butylphenyl) sulfonium tetrakis- (penta Fluorophenyl) borate (TTBPS-TPFPB), tris (4-t-butylphenyl) sulfonium hexafluorophosphate (TTBPS-HFP), triphenylsulfonium triflate (TPS-Tf), bis (4-tert-butylphenyl) iodonium Triflate (DTBPI-Tf), triazine (TAZ-101), triphenylsulfonium hexafluoroantimonate (TPS-103), triphenylsulfonium bis (perfluoromethanesulfonyl) imi (TPS-N1), di- (pt-butyl) phenyliodonium, bis (perfluoromethanesulfonyl) imide (DTBPI-N1), triphenylsulfonium, tris (perfluoromethanesulfonyl) methide (TPS-C1), Examples include di- (pt-butylphenyl) iodonium tris (perfluoromethanesulfonyl) methide (DTBPI-C1) and the like, and one or more of them can be used in combination.

  The content of the photoacid generator is preferably 0.1 to 15 parts by weight, particularly preferably 0.5 to 10 parts by weight with respect to 100 parts by weight of the resin component. Thereby, the thermal decomposition temperature of the resin component can be effectively lowered by exposing the adhesive layer 102, and further, the residue after the thermal decomposition can be reduced.

  The resin composition constituting the adhesive layer 102 includes a sensitizer, which is a component having a function of developing or increasing the reactivity of the photoacid generator with respect to light of a specific type or wavelength, together with the photoacid generator. You can leave.

  The sensitizer is not particularly limited. For example, anthracene, phenanthrene, chrysene, benzpyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H- Examples include thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, 1-chloro-4-propoxythioxanthone, and mixtures thereof. The content of such a sensitizer is preferably 100 parts by weight or less, and more preferably 50 parts by weight or less with respect to 100 parts by weight of the photoacid generator described above.

  Moreover, the resin composition which comprises the contact bonding layer 102 may contain the acid capture | acquisition agent other than the said component, for example. The acid scavenger is a component having a function of preventing an acid generated by light irradiation from diffusing to a site not irradiated with light. That is, it is a component having a function of preventing improvement in solubility in a developing solution at a site not irradiated with light and lowering of the thermal decomposition temperature. By including such an acid scavenger, patterning accuracy by development and thermal decomposition can be made higher.

  Examples of the acid scavenger include tri (n-propyl) amine, triethylamine, a compound represented by the following general formula (2Y), and an amine represented by a compound represented by the following general formula (3Y) ( Secondary amines, tertiary amines), and mixtures thereof.

［一般式（２Ｙ）中、Ｒ^１は、Ｈ、または、アルキル基である。］

[In General Formula (2Y), R ¹ represents H or an alkyl group. ]

［一般式（３Ｙ）中、Ｒ^２〜Ｒ⁶は、Ｈまたは任意の２つがメチル基で残りがＨである。］

[In General Formula (3Y), R ^{2 to} R ⁶ are H or any two are methyl groups and the rest are H. ]

  Among these, it is preferable to use at least one compound selected from the group consisting of the compound represented by the general formula (2Y) and the compound represented by the general formula (3Y). It is more preferable to use a compound represented by Thereby, while improving the sensitivity with respect to the light of a resin composition, the improvement of the solubility with respect to the developing solution of the site | part which has not irradiated light and the fall of a thermal decomposition temperature can be prevented more effectively.

  The content of the acid scavenger is preferably 0.01 to 10 parts by weight and more preferably 0.02 to 8 parts by weight with respect to 100 parts by weight of the photoacid generator described above. Thereby, the improvement of the solubility with respect to the developing solution of the site | part which has not irradiated light and the fall of a thermal decomposition temperature can be prevented still more effectively.

  Further, the resin composition constituting the adhesive layer 102 may contain an antioxidant. The antioxidant has a function of preventing generation of undesirable acid and natural oxidation of the resin composition.

  The antioxidant is not particularly limited. For example, Ciba IRGANOX (registered trademark) 1076 or Ciba IRGAFOS (registered trademark) 168 available from Ciba Fine Chemicals of Tarrytown, New York is preferably used. .

  In addition, as other antioxidants, for example, Ciba Irganox (registered trademark) 129, Ciba Irganox 1330, Ciba Irganox 1010, Ciba Cyanox (registered trademark) 1790, Ciba Irganox 3114, Ciga 31, Ciga etc. can be used.

  The content of the antioxidant is preferably 0.1 to 10 parts by weight, and more preferably 0.5 to 5 parts by weight with respect to 100 parts by weight of the resin component.

  Furthermore, the resin composition constituting the adhesive layer 102 may include additives such as leveling agents such as acrylic, silicone, fluorine, and vinyl, and silane coupling agents, if necessary.

  The silane coupling agent is not particularly limited. For example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p -Styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxy Silane, N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (aminoethyl) -3-aminopropyltri Ethoxysilane 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, bis (triethoxypropyl) Examples thereof include tetrasulfide and 3-isocyanatopropyltriethoxysilane, and these may be used alone or in combination of two or more. When the resin composition which comprises the contact bonding layer 102 contains a silane coupling agent, there exists an effect of the adhesive improvement at the time of patterning.

  Here, the 50% weight reduction temperature of the thermally decomposable resin component contained in the adhesive layer 102 is preferably 400 ° C. or lower, particularly 350 ° C. or lower. By setting the 50% weight reduction temperature to 400 ° C. or less, the thermal effect on the semiconductor element sealing body 270 can be reduced when the adhesive layer 102 is thermally decomposed.

That is, if the 50% weight reduction temperature is 400 ° C. or less, the adhesive layer 102 can be pyrolyzed by adjusting the heating time without performing heating exceeding 400 ° C. Therefore, when the adhesive layer 102 is thermally decomposed, the influence of heat on the semiconductor element sealing body 270 can be reduced.
Furthermore, the resin composition constituting the adhesive layer 102 may contain a solvent (solvent).

  Examples of the solvent include, but are not limited to, hydrocarbons such as mesitylene, decalin, and mineral spirits, alcohols such as anisole, propylene glycol monomethyl ether, dipropylene glycol methyl ether, diethylene glycol monoethyl ether, and diglyme. / Ethers, ethylene carbonate, ethyl acetate, N-butyl acetate, ethyl lactate, ethyl 3-ethoxypropionate, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene carbonate, γ-butyrolactone, etc./lactones, Examples include ketones such as cyclopentanone, cyclohexanone, methyl isobutyl ketone, 2-heptanone, and amides / lactams such as N-methyl-2-pyrrolidone. It is, can be used singly or in combination of two or more of them. When the resin composition contains a solvent, it becomes easy to adjust the viscosity of the resin composition, and the formation of the adhesive layer (thin film) 102 becomes easy.

  Although content of the said solvent is not specifically limited, It is preferable that it is 5-98 weight% of the whole quantity of a resin composition, and it is more preferable that it is 10-95 weight%.

  The difference between the 95% weight reduction temperature and the 5% weight reduction temperature of the thermally decomposable resin component contained in the adhesive layer 102 is preferably 1 ° C. or more and 300 ° C. or less. Especially, it is preferable that the difference of 95% weight reduction temperature and 5% weight reduction temperature is 5 degreeC or more and 200 degrees C or less. By setting the temperature to 1 ° C or higher, there is an effect that a large amount of outgas is generated due to a rapid pyrolysis reaction and the equipment is prevented from being contaminated. By setting the temperature to 300 ° C or lower, the time required for thermal decomposition is shortened. Therefore, the damage to the semiconductor element sealing body 270 can be suppressed and the effect that the thermally decomposable resin component hardly remains in the semiconductor element sealing body 270 can be achieved.

  Furthermore, the thermally decomposable resin component contained in the adhesive layer 102 is preferably a resin composition having a 5% weight loss temperature of 50 ° C. or higher, particularly 100 ° C. or higher. By doing in this way, it can suppress that the contact bonding layer 102 unnecessarily thermally decomposes during the manufacturing process of the semiconductor element sealing body 270.

  Here, the 50% weight loss temperature, the 95% weight loss temperature, and the 5% weight loss temperature are the weights of 50%, 95%, and 5% as measured by TG / DTA (thermal weight / differential thermal analysis), respectively. Means the temperature at which is lost. In the TG / DTA measurement, about 10 mg of a thermally decomposable resin component is precisely weighed and measured with a TG / DTA apparatus (manufactured by Seiko Instruments Inc.) (atmosphere: nitrogen, heating rate: 5 ° C./min).

  In order to set the 50% weight reduction temperature of the thermally decomposable resin component to 400 ° C. or lower, for example, a linear or branched thermally decomposable resin component having no alicyclic or aromatic skeleton is used. Just choose.

  In order to set the difference between the 95% weight loss temperature and the 5% weight loss temperature to 1 ° C. or more and 300 ° C. or less, for example, the molecular weight distribution of the resin component of the thermally decomposable resin composition may be adjusted. .

  Furthermore, in order to set the 5% weight reduction temperature to 50 ° C. or higher, for example, the molecular weight of the thermally decomposable resin component may be adjusted.

  In this step, the semiconductor elements 26 arranged on the dummy substrate 101 are configured to select those that have been evaluated in advance and determined to be non-defective, so that the package 20 manufactured in a batch in the present embodiment can be selected. The yield can be improved and the highly reliable package 20 can be obtained.

  [1-2] Next, the sacrificial layer 38 containing a thermally decomposable resin component that is thermally decomposed by heating corresponds to the shape of the conductor pillar 28 at a position on the dummy substrate 101 where the conductor pillar 28 is to be formed. To form.

  A method for forming the conductor pillar 38 having such a configuration, that is, a method for forming the sacrificial layer 38 patterned corresponding to the shape of the conductor pillar 28 to be formed is not particularly limited. A method of disposing the sacrificial layer 38 patterned on the dummy substrate 101, II: forming a thin film containing the resin component on the dummy substrate 101, and using a mask corresponding to the shape of the sacrificial layer 38, Although the method of patterning this thin film etc. are mentioned, Among these, it is preferable to use the method II. According to the method II, even the sacrificial layer 38 having a fine shape can be formed (deposited) with excellent patterning accuracy.

  When the sacrificial layer 38 is formed using the method II, the sacrificial layer 38 is composed of a resin composition containing the resin component described in the constituent material of the adhesive layer 102 and a photoacid generator. And Since the sacrificial layer 38 has such a structure, the sacrificial layer (thin film) 38 itself has photosensitivity, and the thin film can be patterned without forming a resist layer or the like on the thin film. Thus, the number of steps for forming the sacrificial layer 38 can be reduced.

  Hereinafter, the case where the thin film comprised with the resin composition containing the said resin component and the said photo-acid generator is formed and the sacrificial layer 38 is formed using the method of II is demonstrated to an example.

  [1-2a] First, a liquid material including a resin composition containing a thermally decomposable resin component that is thermally decomposed by heating and a photoacid generator that generates an acid upon irradiation with active energy rays is prepared. Thereafter, this liquid material is supplied onto the dummy substrate 101 and dried to form a thin film (first step).

  This resin composition contains the resin component described in the constituent material of the adhesive layer 102 and the photoacid generator as essential components, and other constituent materials have the same composition as the adhesive layer 102. is there.

  In addition, as a resin composition used as a constituent material of the sacrificial layer 38, it is preferable to use a resin composition having a difference in 50% weight loss temperature of 20 to 100 ° C. before and after irradiation with active energy rays. As a result, the region irradiated with the active energy rays of the thin film can be removed with better selectivity.

  Further, as the resin composition, the difference between the 95% weight reduction temperature and the 5% weight reduction temperature after irradiation with the active energy ray is 1 ° C. ≦ (95% weight reduction temperature) − (5% weight reduction temperature) ≦ It is preferable to use one at 200 ° C. Thereby, when removing the thin film in the region irradiated with the active energy ray, it is possible to set a narrow temperature range for heating the thin film, and there is an advantage that the time required for removing the thin film can be shortened.

  Further, as the resin composition, the difference between the 95% weight reduction temperature and the 5% weight reduction temperature after irradiation with the active energy ray is 80 ° C. ≦ (95% weight reduction temperature) − (5% weight reduction temperature) ≦ It is more preferable to use what is 150 degreeC. Thereby, the said effect can be exhibited more notably.

  In the resin composition described above, the resin component is preferably one in which the main chain of the resin component is thermally cut in the presence of active species. Thereby, since the 50% weight reduction temperature of the resin composition can be effectively lowered, the region irradiated with the active energy ray of the thin film can be removed with better selectivity. The main chain is thermally cut and volatilizes as a low molecular component, so that an advantage that the resin composition hardly remains on the dummy substrate 101 can be obtained.

  Moreover, it is preferable that a resin component is a thing by which the thermal ring-closing reaction of a resin component is accelerated | stimulated in presence of an active species. Thereby, since the resin component is more easily thermally decomposed by the thermal ring closure of the resin component, an advantage that the 50% weight reduction temperature is effectively reduced can be obtained.

  Furthermore, the resin component preferably has an aliphatic quaternary carbon atom in the main chain. By selecting such a resin component, the stability of the intermediate derived from the resin component when the resin component is thermally decomposed is improved.

  The resin component preferably has a hetero atom in the main chain. By selecting such a resin component, bond electrons easily move in the resin component, so that thermal decomposition of the main chain and thermal ring closure reaction are promoted, and the 50% weight loss temperature is likely to be lowered. Is obtained.

  Further, at this time, the resin component preferably has a tertiary carbon atom adjacent to the hetero atom of the main chain. As a result, the stability of the intermediate derived from the resin component when the 50% weight reduction temperature of the resin component is lowered, and further, the bonded electrons are easily transferred, and the thermal decomposition and thermal ring closure reaction of the main chain are promoted. Benefits are gained. In the present specification, the hetero atom means an atom other than hydrogen and carbon.

  The resin component preferably has 5 to 7 repeating atoms in the main chain. This is because when the number of repeating atoms is 5 to 7, it is easy to form a cyclic structure (5 to 7-membered ring), and the resin component having such a structure has a 50% weight reduction temperature effectively reduced. Because.

  Furthermore, the resin component preferably has an XC (= O) -Y structure in the main chain. Here, in the structure, X and Y are each an oxygen atom, a nitrogen atom, or a sulfur atom. By having the resin component having such a structure, the bonded electrons are easily moved, so that the thermal decomposition of the main chain and the thermal ring closure reaction are promoted, and the 50% weight reduction temperature of the resin component is easily lowered. can get.

  The resin component preferably has a structure having a primary or secondary carbon atom in the main chain and a functional group bonded to the side chain of the carbon atom. This is because the thermal decomposition of the main chain is promoted by the functional group.

  Furthermore, in this case, the functional group is preferably any one of a carbonyl group, a thiocarbonyl group, a formal group and an acetal group. Thereby, the said effect will be exhibited more notably.

  The method for supplying the liquid material onto the dummy substrate 101 is not particularly limited, and various coating methods can be used. Examples of the coating method include spin coating, casting, micro gravure coating, and gravure. Examples thereof include a coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, an ink jet method, and a micro contact printing method.

  In addition, the method for drying the liquid material is not particularly limited. For example, a method of heating at a temperature lower than the temperature at which the decomposition and vaporization of the resin component starts can be mentioned. Drying can be performed easily.

  [1-2b] Next, the thin film located in the region where the sacrificial layer 38 is not formed is irradiated with active energy rays to lower the 50% weight reduction temperature of the resin component (second step).

  Thereby, in the region where the thin film sacrificial layer 38 is formed, the 50% weight reduction temperature of the resin component remains high, but in the region where the thin film sacrificial layer 38 is not formed, 50% of the resin component. The weight reduction temperature is reduced.

  Irradiation of active energy rays to the thin film located in such a region is performed by, for example, preparing a mask having an opening corresponding to the shape of the region and irradiating the thin film with active energy rays through the mask. be able to.

  [1-2c] Next, the thin film is heated to selectively decompose and vaporize the resin component contained in the thin film located in the region where the sacrificial layer 38 is not formed (third step).

  Therefore, a sacrificial layer 38 having a shape corresponding to the shape of the conductor column 28 is formed at a position where the conductor column 28 is to be formed.

  Here, the thin film located in the region where the sacrificial layer 38 is not formed can be selectively removed without removing the thin film located in the region where the sacrificial layer 38 is formed through the step [1-2b]. Thus, while the 50% weight reduction temperature of the resin component contained in the thin film located in the region where the sacrificial layer 38 is formed remains high, it is contained in the thin film located in the region where the sacrificial layer 38 is not formed. This is because the 50% weight reduction temperature of the resin component is reduced.

  When the thin film in such a state is heated, the thin film located in the region where the sacrificial layer 38 is not formed is removed preferentially, and therefore the sacrificial layer having a shape corresponding to (matching) the shape of the conductor pillar 28. 38 is formed.

  Thus, according to the method of forming the photosensitive thin film containing the resin composition containing the resin component and the activator and then patterning the thin film, the sacrificial layer 38 is obtained by comparison. The sacrificial layer 38 having a fine shape can be reliably formed by a simple process.

  Specifically, when the sacrificial layer 38 has a cylindrical shape, for example, a layer having a radius of about 20 to 100 μm and a height of about 30 to 500 μm can be formed.

  [1-3] Next, the plurality of semiconductor elements 26 are arranged (placed) such that an electrode pad (not shown) of the semiconductor element 26 is on the sheet material 25 'side.

  Through the above-described steps, a plurality of semiconductor elements 26 are arranged on the dummy substrate 101, and the sacrificial layer 38 corresponds to the shape of the conductor pillar 28 at a position where the conductor pillar 28 is to be formed. It is formed.

  In the above description, the sacrificial layer 38 is first formed on the dummy substrate 101 in the step [1-2], and then the semiconductor element 26 is formed on the dummy substrate 101 in the step [1-3]. However, the present invention is not limited to this, and the order of the step [1-2] and the step [1-3] may be reversed.

  [2] Next, the upper surface of the dummy substrate 101, that is, the surface on which the semiconductor element 26 is disposed and the sacrificial layer 38 is formed, covers the dummy substrate 101, the semiconductor element 26, and the sacrificial layer 38. The sealing part 27 is formed in (see FIG. 3B; sealing part forming step).

  A method for forming the sealing portion 27 is not particularly limited. For example, the dummy substrate 101 is covered so as to cover the dummy substrate 101, the semiconductor element 26, and the sacrificial layer 38 in a state where the granular epoxy resin composition is melted. And a method of compressing and molding the molten epoxy resin composition after being supplied to the upper surface of the resin. According to this method, the semiconductor element 26 can be easily and densely sealed on the dummy substrate 101 with the sealing portion 27.

  Further, as in the present embodiment, the semiconductor element 26 and the sacrificial layer 38 are sealed so as to surround the semiconductor element 26 and the sacrificial layer 38 on the dummy substrate 101 by the sealing portion 27 formed of the epoxy resin composition. By setting it as a structure, the difference of the thermal expansion coefficient between the dummy substrate 101 and the sealing part 27 can be set small. As a result, when the semiconductor element sealing body 270 is peeled from the dummy substrate 101, these are usually heated. At this time, warpage occurs between the dummy substrate 101 and the sealing portion 27. As a result, it is possible to accurately suppress or prevent the sealing portion 27 from being cracked.

Hereinafter, the case where the sealing part 27 is formed by this method will be described in detail.
[2-1] First, a conveying means such as a vibration feeder 501 is provided on a resin material supply container 502 provided with a resin material supply mechanism such as a shutter that can instantaneously supply the epoxy resin composition into the lower mold cavity 504. A certain amount of the granular epoxy resin composition 503 is transported by using this, thereby preparing a resin material supply container 502 containing the granular epoxy resin composition 503 (see FIG. 6).

  At this time, the measurement of the granular epoxy resin composition 503 in the resin material supply container 502 is performed by a measuring means installed under the resin material supply container 502.

  Here, the granular epoxy resin composition 503 contains an epoxy resin as a constituent material thereof.

  Examples of the epoxy resin include monomers, oligomers, and polymers in general having two or more epoxy groups in one molecule, and the molecular weight and molecular structure thereof are not particularly limited. Specifically, crystalline epoxy resins such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin; cresol novolac type epoxy resin, phenol novolac type epoxy resin, Novolac type epoxy resins such as naphthol novolac type epoxy resins; Phenol aralkyl type epoxy resins such as phenylene skeleton-containing phenol aralkyl type epoxy resins, biphenylene skeleton containing phenol aralkyl type epoxy resins, phenylene skeleton containing naphthol aralkyl type epoxy resins; Triphenolmethane type Trifunctional epoxy resins such as epoxy resins and alkyl-modified triphenolmethane epoxy resins; dicyclopentadiene-modified phenolic epoxy Modified phenol type epoxy resins such as cis-resin and terpene modified phenol type epoxy resins; heterocyclic ring-containing epoxy resins such as triazine nucleus-containing epoxy resins, and the like. Among these, one kind or two or more kinds can be used in combination. .

  Moreover, it is preferable that the epoxy resin composition 503 contains the hardening | curing agent as the constituent material.

  The curing agent is not particularly limited as long as it can be cured by reacting with an epoxy resin, and examples thereof include ethylene diamine, trimethylene diamine, tetramethylene diamine, and hexamethylene diamine. Linear aliphatic diamine, metaphenylenediamine, paraphenylenediamine, paraxylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylpropane, 4,4'-diaminodiphenyl ether, 4,4'-diamino Diphenylsulfone, 4,4′-diaminodicyclohexane, bis (4-aminophenyl) phenylmethane, 1,5-diaminonaphthalene, metaxylenediamine, paraxylenediamine, 1,1-bis (4-aminophenyl) cyclohexane, Dicyanodiamide Amino acids; resol-type phenol resins such as aniline-modified resole resins and dimethyl ether resole resins; Phenol aralkyl resins such as biphenylene skeleton-containing phenol aralkyl resins; phenol resins having a condensed polycyclic structure such as naphthalene skeleton and anthracene skeleton; polyoxystyrenes such as polyparaoxystyrene; hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride Acid (MTHPA) alicyclic acid anhydride, trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzofu Acid anhydrides including aromatic acid anhydrides such as non-tetracarboxylic acid (BTDA); Polymercaptan compounds such as polysulfides, thioesters, thioethers; Isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; Carboxylic acid-containing polyester resins Organic acids, such as these, are mentioned, Among these, it can be used 1 type or in combination of 2 or more types.

  Among these, as the curing agent used for the constituent material of the sealing portion 27 for sealing the semiconductor element 26 and the sacrificial layer 38, at least two curing agents are used in one molecule from the viewpoint of moisture resistance, reliability, and the like. A compound having a phenolic hydroxyl group is preferably used. Examples of the curing agent include novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol novolak resin; resol type phenol resin; polyoxystyrene such as polyparaoxystyrene; phenylene skeleton-containing phenol. Examples thereof include aralkyl resins and biphenylene skeleton-containing phenol aralkyl resins.

  Moreover, the epoxy resin composition 503 can use what contains an inorganic filler as a constituent material.

  The inorganic filler is not particularly limited. For example, silica such as fused crushed silica, fused spherical silica, crystalline silica, secondary agglomerated silica; alumina; titanium white; aluminum hydroxide; talc; clay; mica; glass fiber, etc. These can be used, and one or more of these can be used in combination. Among these, fused spherical silica is particularly preferable. Further, the particle shape is preferably infinitely spherical. Furthermore, the inorganic filling amount can be increased by mixing the particles having different particle sizes, but the particle size is considered in consideration of the filling property around the semiconductor element 26 in the lower mold cavity 504. It is preferable that they are 0.01 micrometer or more and 150 micrometers or less.

  Moreover, it is preferable that the epoxy resin composition 503 contains the hardening accelerator as the structural material.

  The curing accelerator is not particularly limited, and examples thereof include diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof; amine compounds such as tributylamine and benzyldimethylamine; Imidazole compounds such as 2-methylimidazole; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; tetraphenylphosphonium / tetraphenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetra Tetra-substituted phosphonium / tetra-substituted borates such as phenylphosphonium / tetranaphthoyloxyborate and tetraphenylphosphonium / tetranaphthyloxyborate; Include triphenylphosphine or the like is can be used singly or in combination of two or more of them.

  Further, the epoxy resin composition 503 includes, in addition to the above-described constituent materials, a coupling agent such as γ-glycidoxypropyltrimethoxysilane; a colorant such as carbon black; a natural wax, a synthetic wax, Release agents such as higher fatty acids or metal salts thereof, paraffin and oxidized polyethylene; low stress agents such as silicone oil and silicone rubber; ion scavengers such as hydrotalcite; flame retardants such as aluminum hydroxide; Various additives may be contained.

  Further, in the granular epoxy resin composition 503, the ratio of coarse particles of 2 mm or more in the particle size distribution measured by sieving using a JIS standard sieve is 3% by mass or less with respect to the total resin composition. Preferably, it is 1 mass% or less. This is because the larger the particle size, the larger the mass and volume. Therefore, the greater the proportion of the larger particles, the lower the weighing accuracy at the time of weighing, and a decrease in the quality of the sealing part 27 after compression molding. This may cause problems such as clogging at supply ports such as the vibration feeder 501 and the resin material supply container 502. On the other hand, if the range is equal to or less than the above-described upper limit value, a good weighing accuracy can be obtained, thereby reducing the possibility of causing a deterioration in quality in the semiconductor device, and causing problems such as clogging at the supply port. This is because the fear is reduced. Moreover, about the lower limit of the ratio of the coarse grain of 2 mm or more, it does not specifically limit and 0 mass% may be sufficient.

  Moreover, in order to obtain stable weighing accuracy, the granular epoxy resin composition 503 has a proportion of fine powder of less than 106 μm in the particle size distribution measured by sieving using a JIS standard sieve is 5 with respect to the total resin composition. The content is preferably at most mass%, more preferably at most 3 mass%. This means that fine powder of less than 106 μm is fixed during storage of the granular epoxy resin composition 503, fixed particles on the transport path of the granular epoxy resin composition 503, and adhered to the transport device. This may cause poor conveyance and hinder continuous productivity and production cycle time. On the other hand, when the range is equal to or less than the above-described upper limit value, there is almost no sticking of particles and adhesion to the conveying device, and good continuous productivity and stable productivity can be obtained. Further, the lower limit value of the proportion of fine powder having a particle size of less than 106 μm is not particularly limited, and may be 0% by mass.

  In addition, as a method for measuring the particle size distribution of the granular epoxy resin composition 503, for example, using a JIS standard sieve having a mesh size of 2.00 mm and 106 μm provided in a low-tap type sieve vibrator, 40 g of sample is passed through a sieve while vibrating (hammer stroke: 120 times / min.), And passes through a 106 μm sieve, the mass% of coarse particles remaining on the 2.00 mm sieve with respect to the sample weight before classification. The method for obtaining the mass% of the fine powder to be used is preferable because the characteristics necessary for actual compression molding can be realized. In this method, particles having a high aspect ratio (the minor axis is smaller than the sieve opening and the major axis is larger) may pass through each sieve, but for convenience, they are classified by a certain method. The particle size distribution of the granular resin composition is defined by mass% of the components.

  The granular epoxy resin composition 503 preferably has a ratio D1 / D2 of the granule density D1 and the cured product specific gravity D2 of about 0.88 to 0.95, preferably 0.90 to 0.94. More preferably, it is about. When the lower limit value is exceeded, the voids inside the particles do not become too high, and there is a low possibility that problems such as the generation of voids in the sealing portion 27 during compression molding will occur. Moreover, if it is below the above-mentioned upper limit value, the granule density will not become too high, and there will be no problem that the moving speed of the granule becomes slow at the time of conveyance by a conveying means such as the vibration feeder 501. If the moving speed becomes slow, there is a risk of stagnation, which causes problems such as sticking. Furthermore, the granule density D1 of the granular epoxy resin composition 503 is preferably 1.95 or less, and more preferably 1.90 or less. When the upper limit value is not exceeded, good transportability is obtained. Further, the lower limit value of the granule density D1 of the granular epoxy resin composition 503 is not particularly limited, but may be 1.75 or more which is a range in which the porosity inside the particles does not become too high. preferable.

The granule density D1 is measured by sieving the granular resin composition with a JIS standard sieve of 32 mesh (aperture 500 μm) for easy handling, and then adding about 5 g of the granular resin composition on the sieve. A sample weighed to 0.1 mg is used. After filling the pycnometer (capacity 50 cc) with distilled water and adding a few drops of surfactant, the mass of the pycnometer containing distilled water and surfactant is measured. Next, the sample is put into a pycnometer, the mass of the entire pycnometer containing distilled water, a surfactant, and the sample is measured, and calculated according to the following formula (1).
Granule density (g / ml) = (Mp × ρw) / (Mw + Mp−Mt) (1)
ρw: density of distilled water at the measurement temperature (g / ml)
Mw: Mass of a pycnometer filled with distilled water and further added with a few drops of surfactant (g)
Mp: sample mass (g)
Mt: Mass of the pycnometer containing distilled water, surfactant and sample (g)
The surfactant is used to increase the wetting of distilled water and the sample and minimize the entrainment of bubbles. There are no particular limitations on the surfactant that can be used, and a material that eliminates entrainment of bubbles may be selected.

  Moreover, as a measuring method of hardened | cured material specific gravity D2, the measuring method of hardened | cured material specific gravity by transfer molding which is a simpler method is used. Specifically, the granular epoxy resin composition 503 is once compressed into tablets of a predetermined size, and using a transfer molding machine, the mold temperature is 175 ± 5 ° C., the injection pressure is 7 MPa, the curing time is 120 seconds, and the diameter is Examples include a method of forming a disk having a size of 50 mm and a thickness of 3 mm, calculating the mass and volume, and calculating the specific gravity of the cured product.

  [2-2] Next, the resin material supply container 502 in which the granular epoxy resin composition 503 is placed is placed between the upper mold and the lower mold of the compression mold, and in the step [1] The formed dummy substrate 101 on which the semiconductor element 26 is disposed and the sacrificial layer 38 is formed is placed on the upper mold of the compression molding die by a fixing means such as clamping and suction, and the semiconductor element 26 and the sacrificial layer 38 are placed below. Fix it to the side (not shown).

  [2-3] Next, the weighed granular epoxy resin composition 503 is supplied into the lower mold cavity 504 provided in the lower mold by a resin material supply mechanism such as a shutter constituting the bottom surface of the resin material supply container 502. (See FIG. 7).

  Thereby, the granular epoxy resin composition 503 is heated to a predetermined temperature in the lower mold cavity 504, and as a result, is melted.

  [2-4] Next, after carrying out the resin material supply container 502 from between the upper mold and the lower mold of the compression mold, the mold is clamped by bringing the distance between the upper mold and the lower mold closer. The lower mold cavity 504 is filled with the melted epoxy resin composition so as to surround the semiconductor element 26 and the sacrificial layer 38. Furthermore, the sealing part 27 is formed by hardening the molten epoxy resin composition, and the semiconductor element 26 and the sacrificial layer 38 on the dummy substrate 101 are sealed.

  At this time, the inside of the lower mold cavity 504 is preferably under reduced pressure. Thereby, the filling rate by an epoxy resin composition can be improved more.

  [2-5] Next, after leaving for a predetermined period of time, the compression mold is opened by separating the upper mold and the lower mold, and the fixing means is released, so that the sealing portion 27 is released. The formed dummy substrate 101 is taken out.

  As described above, the sealing portion 27 that covers the dummy substrate 101, the semiconductor element 26, and the sacrificial layer 38 is formed on the upper surface of the dummy substrate 101.

  That is, the sealing portion 27 that seals both the semiconductor element 26 and the sacrificial layer 38 can be formed collectively.

  [3] Next, by reducing the adhesive force of the adhesive layer 102, the dummy substrate 101 is peeled from the semiconductor element 26, the sacrificial layer 38, and the sealing portion 27 as shown in FIG. ).

  Thereby, the dummy substrate 101 is removed, and the semiconductor element 26 and the sacrificial layer 38 are exposed from the sealing portion 27 from the lower surface side (the other surface side) of the sealing portion 27.

  For example, as described in the above step [1], when the adhesive layer 102 includes a thermally decomposable resin component, the decrease in the adhesive strength of the adhesive layer 102 is imparted with energy by heat treatment. Can be easily performed.

  That is, when the adhesive layer 102 includes a thermally decomposable resin component, the adhesive layer 102 is vaporized by heating the adhesive layer 102 to thermally decompose the resin component. The adhesive force decreases.

  [4] Next, the sacrificial layer 38 is removed by heating, and the first through hole 271 is formed at a position where the conductor column 28 of the sealing portion 27 is to be formed. Conductor columns 28 are formed in the holes 271 (conductor column forming step).

Hereinafter, this conductor column forming step will be described.
[4-1] First, the sacrificial layer 38 is heated.

  Here, since the sacrificial layer 38 contains a resin component that decomposes and vaporizes when heated and is exposed on the lower surface side of the sealing portion 27, it decomposes and vaporizes when heated in this step. Since the resin component diffuses into the atmosphere, the sacrificial layer 38 is removed. As a result, a plurality of first through holes 271 are formed corresponding to positions where the conductor pillars 28 are to be formed.

  When the adhesive layer 102 and the sacrificial layer 38 are made of the same material, the dummy substrate 101 is detached from the sealing portion 27 and the sacrificial layer 38 is removed almost simultaneously.

  [4-2] Next, the conductive pillars 28 are respectively formed in the formed first through holes 271.

  As a method for forming the conductor column 28, a method similar to the method for forming the conductor post 24 in the second through hole 251 described in a later step [8] is used. In particular, the electrolytic plating method is preferably used from the viewpoint that the conductor pillars 28 exhibiting excellent adhesion can be easily and reliably formed. This electrolytic plating method will be described in detail in the post-process [8]. I will do it.

  [5] Next, as shown in FIG. 3 (f), the upper surface of the sealing portion 27 is ground and / or polished until the end on the upper surface side (one surface side) of the conductor column 28 is exposed. (Grinding / polishing process).

  As a result, the conductor pillar 28 functioning as a terminal electrically connected to the package mounted on the upper side of the package 20 via the bump 21 is exposed on the upper surface side of the sealing portion 27.

  The sealing portion 27 can be ground and / or polished using, for example, a grinder provided in a grinding device (grinder).

  As described above, the semiconductor element sealing body 270 in which the semiconductor element 26 and the conductor column 28 are sealed by the sealing portion 27 can be obtained.

  The grinding / polishing step [5] may be performed prior to the conductor column forming step [4] in addition to the conductor column forming step [4] as described above. However, as in the present embodiment, by performing after the conductor column forming step [4], it is possible to accurately suppress or prevent the sealing body 27 from being cracked in the conductor column forming step [4]. Can be prevented.

  In addition, the semiconductor element placement process [1], the sealing part formation process [2], the peeling process [3], the conductor pillar formation process [4], and the grinding / polishing process [5] described above, The semiconductor device sealing body 270 according to the first embodiment of the present invention is manufactured, in which the semiconductor element sealing body 270 having the plurality of conductor pillars 28 and the sealing portion 27 for sealing them is manufactured. The

  [6] Next, two flat sheet materials 25 ′ are prepared, and second through holes 251 that penetrate in the thickness direction are formed in the sheet material 25 ′ (through hole forming step).

  In the next step [7], the second through-hole 251 is formed at a position corresponding to the conductor pillar 28 in the sheet material 25 ′ disposed on the upper side of the semiconductor element sealing body 270, and seals the semiconductor element. In the sheet material 25 ′ disposed below the stopper 270, the sheet material 25 ′ is formed at a position corresponding to the electrode pad and the conductor column 28 provided in the semiconductor element 16.

  Further, the sheet material 25 ′ is cut in the thickness direction and separated into individual pieces, thereby forming an interposer (substrate) 25 included in the semiconductor package 20 and exhibiting a function of holding the semiconductor element 26 and the conductor pillar 28. Is.

  The sheet material 25 ′ is not particularly limited, but is a rigid substrate (hard substrate) or a flexible substrate (flexible substrate) such as a core substrate made of a core material, a build-up substrate made of a build-up material. Any of these may be used, but among these, a build-up substrate is particularly preferable. A build-up substrate is preferably used because it is particularly excellent in processability.

  Although it does not specifically limit as a core board | substrate, For example, what is mainly comprised with thermosetting resins, such as cyanate resin, an epoxy resin, a bismaleimide-triazine resin, etc. are mentioned. Among these, those composed mainly of cyanate resin are preferably used. The sheet material 25 ′ composed of such a constituent material has excellent mechanical strength.

  As cyanate resin, what was obtained by making a halogenated cyanide compound and phenols react, and prepolymerizing by methods, such as a heating as needed, is mentioned. Specific examples include bisphenol type cyanate resins such as novolac type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, and tetramethylbisphenol F type cyanate resin.

  Examples of the epoxy resin include bisphenol A type epoxy resin, bisphenol type epoxy resin such as bisphenol F type epoxy resin, phenol novolac type epoxy resin, novolac type epoxy resin such as cresol novolak epoxy resin, and biphenyl type epoxy resin. And arylalkylene type epoxy resins such as xylylene type epoxy resins, dicyclopentadiene type epoxy resins, norbornene type epoxy resins, adamantane type epoxy resins and fluorene type epoxy resins.

  When the thermosetting resin as described above is used as the core substrate, the core substrate is obtained by impregnating a glass fiber woven fabric with a thermosetting resin before curing and then curing the thermosetting resin. It is preferable to use those obtained. As a result, the sheet material 25 ′ (core substrate) exhibits more excellent mechanical strength.

  The build-up material is not particularly limited, but for example, curing a resin composition containing a thermosetting resin such as a phenol resin, a urea resin, a melamine resin, and an epoxy resin, a curing agent, and an inorganic filler. The thing comprised as a main material is mentioned.

  Among the resin compositions having such a configuration, those containing a copolymer epoxy resin represented by the following general formula (1) are preferably used as the thermosetting resin. The sheet material 25 ′ composed of a cured product of such a resin composition has excellent mechanical strength. In addition, the sheet material 25 ′ is formed with the second through hole 251 in this step [6], but is excellent in workability when forming the second through hole 251 having a fine shape.

[式中、Ａｒは縮合環芳香族炭化水素基を、Ｘは水素、またはエポキシ基（グリシジルエーテル基）を、Ｒ_２は、水素、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される１種を表す。ｎは１以上の整数であり、ｐ、ｑは０以上の整数であり、またｐ、ｑの値は、繰り返し単位毎に同一でも、異なっていてもよい。]

[Wherein Ar represents a condensed ring aromatic hydrocarbon group, X represents hydrogen or an epoxy group (glycidyl ether group), R ₂ represents hydrogen, a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group, And one selected from benzyl groups. n is an integer of 1 or more, p and q are integers of 0 or more, and the values of p and q may be the same or different for each repeating unit. ]

  In addition, it is preferable that the condensed ring aromatic hydrocarbon group [Ar] of the copolymer epoxy resin is any one of structures represented by the following formulas (Ar1) to (Ar4).

[式中、Ｒ_１は、水素原子、メチル基、エチル基、プロピル基、ブチル基、フェニル基、およびベンジル基の中から選択される１種を表す。]

[Wherein, R ₁ represents _one selected from a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, a phenyl group, and a benzyl group. ]

  In addition, although content of the said copolymer epoxy resin is not specifically limited, In hardened | cured material (1st sheet material 25 '), it is preferable that it is about 3-42 weight%, About 5-35 weight%. It is more preferable that

  In addition to the copolymer epoxy resin, the resin composition may further contain another epoxy resin different from the copolymer epoxy resin. Although it does not specifically limit as another epoxy resin, For example, novolak-type epoxy resins, such as a phenol novolak-type epoxy resin and a cresol novolak epoxy resin, a biphenyl-type epoxy resin, etc. are mentioned.

  The curing agent is not particularly limited, but examples thereof include imidazoles such as 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 2-phenyl-4-methylimidazole, and 2-ethyl-4-methylimidazole. Compounds, organic metal salts such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), trisacetylacetonate cobalt (III), triethylamine, tributylamine, diazabicyclo [2, 2,2] tertiary amines such as octane, phenolic compounds such as phenol, bisphenol A, nonylphenol, organic acids such as acetic acid, benzoic acid, salicylic acid, paratoluenesulfonic acid, or mixtures thereof. As the curing accelerator, one kind including these derivatives may be used alone, or two or more kinds including these derivatives may be used in combination.

  The inorganic filler is not particularly limited. For example, talc, calcined clay, unfired clay, mica, silicate such as glass, oxide such as titanium oxide, alumina, silica, fused silica, calcium carbonate, magnesium carbonate , Carbonates such as hydrotalcite, hydroxides such as aluminum hydroxide, magnesium hydroxide, calcium hydroxide, sulfates or sulfites such as barium sulfate, calcium sulfate, calcium sulfite, zinc borate, barium metaborate, Borate such as aluminum borate, calcium borate, sodium borate, nitrides such as aluminum nitride, boron nitride, silicon nitride, carbon nitride, titanates such as strontium titanate, barium titanate, etc. One or more of these can be used in combination.

  The particle size of the inorganic filler is not particularly limited, but the average particle size is preferably 1.2 μm or less, and more preferably about 0.01 to 1.0 μm.

  In addition, the content of the inorganic filler is preferably about 0 to 85% by weight, and more preferably about 30 to 65% by weight in the cured product (sheet material 25 ').

  The resin composition preferably contains a cyanate resin and / or a prepolymer thereof.

  Although it does not specifically limit as said cyanate resin and / or its prepolymer resin, For example, it can obtain by making a halogenated cyanide compound and phenols react, and prepolymerizing by methods, such as a heating, as needed. it can. Moreover, the commercial item prepared in this way can also be used.

  By using the cyanate resin and / or its prepolymer, the elastic modulus of the sheet material 25 ′ can be improved. Cyanate resins (especially novolac-type cyanate resins) have a rigid chemical structure, so they are excellent in heat resistance, have a small decrease in elastic modulus even above the glass transition temperature, and maintain a high elastic modulus even at high temperatures. Can do. Furthermore, since a functional group having a high polarizability such as a hydroxyl group is not generated by the curing reaction, the dielectric properties can be improved.

  Among the cyanate resins and / or prepolymers thereof, novolak type cyanate resins represented by the following general formula (3) are preferable. Thereby, in addition to the above effects, the glass transition temperature of the sheet material 25 ′ can be further increased, and the flame retardancy of the insulating resin layer after curing can be further improved.

  Although content of the said cyanate resin and / or its prepolymer is not specifically limited, It is preferable that it is 5 to 50 weight% of a resin composition, More preferably, it is 10 to 40 weight%. Thereby, it becomes more excellent in the workability at the time of forming the 2nd through-hole 251 which has a fine shape.

  In the resin composition, various additives such as leveling agents, antifoaming agents, antioxidants, pigments, dyes, antifoaming agents are used to improve various properties such as resin compatibility, stability, and workability. An agent, a flame retardant, an ultraviolet absorber, an ion scavenger, a non-reactive diluent, a reactive diluent, a thixotropic agent, a thickener, and the like may be added.

  Examples of flexible substrates include polyimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polytetrafluoroethylene (PTFE), polyimide benzoxazole (PIBO), and heat such as liquid crystal polymer. The thing comprised with a plastic resin etc. is mentioned.

  Also, any method may be used to form the second through-hole 251 in the sheet material 25 ′. For example, I: a mask is formed in a region of the sheet material 25 ′ where the second through-hole 251 is not formed. , Using this mask, etching the sheet material 25 ′ to form the second through hole 251; II: selectively irradiating the region of the sheet material 25 ′ where the second through hole 251 is formed with a laser The method of forming the second through-hole 251 can be mentioned, but the method II is preferably used. According to the method II, the second through hole 251 having a fine shape can be formed relatively easily.

  In the method I, as a method of etching the sheet material 25 ′, for example, a physical etching method such as plasma etching, reactive etching, beam etching, and light-assisted etching, or a chemical etching method such as wet etching is used. Can be mentioned.

Examples of the type of laser used in the method II include Ne-He laser, YAG laser, YVO ₄ laser, and excimer laser.

  As described above, when the package is configured to include the covering portion instead of the interposer 25, the semiconductor is obtained by performing the post-process [10] instead of the main process [6] to the next process [7]. Covering portions having through holes on both surfaces of the element sealing body 270 can be formed.

  [7] Next, a sheet material 25 ′ in which the second through-hole 251 is formed at a position corresponding to the electrode pad provided in the semiconductor element 16 and the conductor column 28 is attached to the lower surface of the semiconductor element sealing body 270. Further, a sheet material 25 ′ having a second through hole 251 formed at a position corresponding to the conductor pillar 28 is disposed on the upper surface of the semiconductor element sealing body 270 (sheet material arranging step).

  At this time, the sheet materials 25 ′ disposed on the upper and lower surfaces of the semiconductor element sealing body 270 are respectively fixed by an adhesive such as an epoxy adhesive (not shown).

  [8] Next, as shown in FIG. 4B, conductive posts 24 having conductivity are formed in the second through holes 251 provided in the sheet material 25 '(conductor post forming step).

  The method for forming the conductor post 24 is not particularly limited. For example, I: a method for forming the conductor post 24 using a plating method such as an electrolytic plating method or an electroless plating method, and II: a conductive material. Examples of the method include forming the conductor post 24 by supplying the liquid material to the second through-hole 251, drying and solidifying, and the like. In particular, the conductor post 24 is formed using the method I, particularly electrolytic plating. Is preferred. According to the electrolytic plating method, the conductor post 24 exhibiting excellent adhesion can be easily and reliably formed on the electrode pad of the semiconductor element 26 and the wiring 23 formed in the next step [9].

Hereinafter, a method of forming the conductor post 24 using the electrolytic plating method will be described.
[8-1] First, the electrode exposed from the sheet material 25 ′, the inner surface of the second through hole 251, and the second through hole 251 on the surface of the sheet material 25 ′ opposite to the semiconductor element sealing body 270. A conductive seed layer is integrally formed so as to cover the pad and the conductor pillar 28.

  This seed layer is composed of, for example, a Cu / Ti film, and is obtained by first forming a Ti film using a vapor phase film forming method such as a sputtering method and then forming a Cu film on the Ti film. be able to.

  [8-2] Next, a mask (resist layer) is formed in a region where the conductor post 24 is not formed, that is, a region excluding the second through hole 251.

  The mask is formed by supplying a liquid material containing a photosensitive material onto the seed layer using a coating method or the like, and then exposing through a photomask corresponding to the shape of the conductor post 24 to be formed. It can be formed by developing with a developer.

  The photosensitive material used in this step may be either a negative photosensitive material or a positive photosensitive material.

  [8-3] Next, the conductor posts 24 are formed by electrolytic plating using the seed layer as an electrode.

  Here, since the mask is formed by the step [8-2] so that the second through hole 251 is selectively exposed from the mask, the conductor post 24 is replaced with the second through hole in this step. It can be selectively formed to fill 251.

  The metal constituting the conductor post 24 is not particularly limited, and examples thereof include Cu, Cu-based alloy, Ni, Ni-based alloy, and Au.

  As shown in FIG. 4B, the conductor post 24 need not be formed so as to fill almost all of the second through hole 251. At least the inner surface of the second through hole 251 and the electrode pad Further, it may be formed so as to cover the conductor pillar 28.

[8-4] Next, the mask formed on the seed layer is removed.
The removal of the mask can be performed by combining one or more of physical etching methods such as plasma etching, reactive etching, beam etching, and light assisted etching, and chemical etching methods such as wet etching. However, specifically, a method of swelling and dissolving the mask with an alkaline developer and removing it is preferably used.

When the wiring 23 is formed by electrolytic plating in the next step [9], the seed layer is left on the sheet material 25 ′ without removing the seed layer when the mask is removed.
The conductor post 24 is formed in the second through hole 251 through the above-described steps.

  [9] Next, as shown in FIG. 4 (c), the two sheet members 25 ′ are predetermined on the surface opposite to the semiconductor element sealing body 270 so as to be electrically connected to the conductor posts 24. A wiring 23 patterned into a shape is formed (wiring forming step).

  As a method of forming the wiring 23, the same method as the method of forming the conductor post 24 described in the step [8] can be used, and the electrolytic plating method is used in the same manner as the case of forming the conductor post 24. Is preferred.

Hereinafter, a method of forming the wiring 23 using the electrolytic plating method will be described.
[9-1] First, in the present embodiment, a mask is formed in a region where the wiring 23 of the seed layer left in the step [8-4] is not formed.

  For the formation of this mask, the same method as described as the method for forming the mask in the step [8-2] is used.

[9-2] Next, the wiring 23 is formed by an electrolytic plating method.
Here, in this step [9-2], when the wiring 23 is formed by the electrolytic plating method, the seed layer is left in the sheet material 25 ′ without being removed as described above. Wiring 23 can be formed by electrolytic plating using the seed layer as an electrode.

  In addition, it does not specifically limit as a metal which comprises the wiring 23, The thing similar to having mentioned as a metal which comprises the conductor post 24 can be used. Furthermore, the constituent material of the conductor post 24 and the wiring 23 may be the same or different.

  [9-3] Next, after removing the mask formed on the seed layer, the seed layer exposed by removing the mask is removed on the side of the sheet material 25 ′ opposite to the semiconductor element sealing body 270.

  The removal of these masks and seed layers can be performed using the same method as described in the above step [8-4]. Among these, a method of removing the mask by swelling and dissolving with an alkaline developer is preferably used for removing the mask, and a method of removing the seed layer using an etching solution is preferably used for removing the seed layer.

  Through the steps as described above, the wiring 23 formed in a predetermined shape on the surface opposite to the semiconductor element sealing body 270 of the two sheet members 25 ′ is formed on the conductor post 24 and / or the conductor pillar 28. It can be formed in an electrically connected state.

  [10] Next, as shown in FIG. 4 (d), a part of the wiring 23 is exposed on the surface of the two sheet members 25 ′ opposite to the semiconductor element sealing body 270. The covering portion 22 including the opening 221 is formed (covering portion forming step).

  The opening 221 is formed so as to correspond to the position where the bump 21 is formed in the next step [11].

  Further, it is preferable to form a covering layer (under barrier metal layer (UBM layer)) on the wiring 23 exposed from the opening 221. Thereby, for example, when the wiring 23 is made of Cu or a Cu-based alloy, the elution of Cu atoms from the wiring 23 to the bumps 21 can be suppressed or prevented accurately.

  Such a coating layer is usually composed of a laminate in which an upper layer mainly composed of Au is laminated on a lower layer mainly composed of Ni, and is formed using, for example, an electroless plating method.

  The covering portion 22 is formed by supplying a liquid material (varnish) containing an insulating material having photosensitivity to the surface of the sheet material 25 ′ opposite to the semiconductor element sealing body 270 using a coating method or the like. Then, after exposure through a photomask corresponding to the shape of the opening 221 to be formed, the region to be the opening 221 is removed with a developer (etching solution).

  Here, the insulating material having photosensitivity used in this step is not particularly limited, but the following materials are preferable as those having excellent adhesion, thickness uniformity, and step embedding property. Used for.

  First, an alkali-soluble resin composition containing an alkali-soluble resin and a photosensitizer is suitably used as an insulating material having photosensitivity.

  Examples of the alkali-soluble resin include acrylic resins such as cresol-type novolak resins, hydroxystyrene resins, methacrylic acid resins, and methacrylic ester resins, cyclic olefin resins containing hydroxyl groups, carboxyl groups, and polyamide resins. . Among these, polyamide-based resins are preferable. Specifically, resins having at least one of a polybenzoxazole structure and a polyimide structure and having a hydroxyl group, a carboxyl group, an ether bond or an ester bond in the main chain or side chain, polybenzox Examples thereof include a resin having an oxazole precursor structure, a resin having a polyimide precursor structure, and a resin having a polyamic acid ester structure. As such a polyamide-type resin, the polyamide-type resin shown, for example by following General formula (4) can be mentioned.

  The polyamide resin represented by the general formula (4) includes, for example, a compound selected from a diamine having a X structure, bis (aminophenol), diaminophenol, and the like, a tetracarboxylic acid anhydride having a Y structure, and trimellit. It can be obtained by reacting with a compound selected from acid anhydride, dicarboxylic acid or dicarboxylic acid dichloride, dicarboxylic acid derivative, hydroxydicarboxylic acid, hydroxydicarboxylic acid derivative and the like. In the case of dicarboxylic acid, an active ester type dicarboxylic acid derivative obtained by reacting 1-hydroxy-1,2,3-benzotriazole or the like in advance may be used in order to increase the reaction yield or the like.

  When the polyamide resin represented by the general formula (4) is heated at, for example, 150 to 400 ° C., dehydration and ring closure occurs, and a heat resistant resin is obtained in the form of polyimide, polybenzoxazole, or a copolymer of both.

  X represented by the general formula (4) is a cyclic compound group, and examples thereof include aromatic compounds such as a benzene ring and a naphthalene ring, and heterocyclic compounds such as bisphenols, pyrroles and furans.

R ¹ is a hydroxyl group or —O—R ³ , and R ³ is an organic group having 1 to 15 carbon atoms or a nitrogen-containing cyclic compound. Specific examples of R ³ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. Can be mentioned.
R ³ is used for the purpose of adjusting the solubility of the hydroxyl group in an alkaline aqueous solution.

It is also possible to use a nitrogen-containing cyclic compound as R ^3. Thereby, it is excellent in adhesiveness with a metal wiring (especially copper wiring) etc. Examples of the nitrogen-containing cyclic compound include (1H-tetrazol-5-yl) amino group, 1- (1H-tetrazol-5-yl) methyl-amino group, and 3- (1H-tetrazol-5-yl) benz. -An amino group etc. are mentioned.

  Y represented by the general formula (4) is a cyclic compound group, and examples thereof include those similar to X. For example, aromatic compounds such as benzene ring and naphthalene ring, bisphenols, pyrroles, furans, pyridine And the like, and the like.

As shown in the general formula (4), 0 to 4 R ² are bonded to Y.
R ² is a hydroxyl group, a carboxyl group, —O—R ³ , or —COOR ³ , and may be the same or different. R ³ is an organic group having 1 to 15 carbon atoms or a nitrogen-containing cyclic compound. Specific examples of R ³ include formyl group, methyl group, ethyl group, propyl group, isopropyl group, tertiary butyl group, tertiary butoxycarbonyl group, phenyl group, benzyl group, tetrahydrofuranyl group, tetrahydropyranyl group and the like. Can be mentioned.

However, if the hydroxyl group is not as R ^1, at least one of R ² must be a carboxyl group. Further, when a carboxyl group is not as R ^2, at least one of R ¹ must be a hydroxyl group.
R ³ is used for the purpose of adjusting the solubility of the hydroxyl group in an alkaline aqueous solution.

  Moreover, it is preferable that at least one of the side chain and the other terminal of the alkali-soluble resin is substituted with a nitrogen-containing cyclic compound. Thereby, the adhesiveness with respect to the wiring 23 of the coating | coated part 22 can be improved.

  Examples of the nitrogen-containing cyclic compound include 1- (5-1H-triazoyl) methylamino group, 3- (1H-pyrazoyl) amino group, 4- (1H-pyrazoyl) amino group, and 5- (1H-pyrazoyl) amino. Group, 1- (3-1H-pyrazolyl) methylamino group, 1- (4-1H-pyrazoyl) methylamino group, 1- (5-1H-pyrazolyl) methylamino group, (1H-tetrazol-5-yl) An amino group, 1- (1H-tetrazol-5-yl) methyl-amino group, 3- (1H-tetrazol-5-yl) benz-amino group and the like can be mentioned.

  The alkali-soluble resin composition contains a photosensitizer. As a result, a chemical reaction occurs in the alkali-soluble resin by irradiation with ultraviolet rays or the like, and due to this, it becomes easy to dissolve in the alkaline aqueous solution, and a difference in solubility can be provided.

  The photosensitizer is not particularly limited. For example, an ester of a phenol compound and 1,2-naphthoquinone-2-diazide-5-sulfonic acid or 1,2-naphthoquinone-2-diazide-4-sulfonic acid. Is mentioned.

  The content of the photosensitizer is preferably 1 to 50% by weight, and particularly preferably 5 to 30% by weight, based on the entire alkali-soluble resin composition. When the content is within the above range, the sensitivity is particularly excellent.

  Moreover, additives, such as a coupling agent, such as a leveling agent, a silane coupling agent, a titanate coupling agent, and those each reaction material, can be added to an alkali-soluble resin composition as needed.

  The alkali-soluble resin composition as described above is usually used by dissolving the above-described components in a solvent to form a liquid material (varnish-like).

  Examples of the solvent include, but are not limited to, N-methyl-2-pyrrolidone, γ-butyrolactone, N, N′-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, Dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate Methyl-3-methoxypropionate and the like, and a single solvent or a mixed solvent thereof is used.

<< norbornene resin composition >>
Next, in addition to the alkali-soluble resin composition described above, a norbornene-based resin composition may be mentioned as a material that can be suitably used as an insulating material having photosensitivity. Among these norbornene-based resin compositions, those that exhibit remarkable adhesion, thickness uniformity, and step-embedding property, particularly, a cyclic olefin polymer or a hydrogenated product thereof (A) and the following general formula (5) The resin composition containing the compound (B) which has a structure shown by is used preferably.

  The cyclic olefin polymer or the hydrogenated product (A) thereof contained in the resin composition is not particularly limited, but is a polymer of a monocyclic olefin monomer such as cyclohexene or cyclooctene, norbornene , Norbornadiene, dicyclopentadiene, dihydrodicyclopentadiene, tetracyclododecene, tricyclopentadiene, dihydrotricyclopentadiene, tetracyclopentadiene, dihydrotetracyclopentadiene, etc. Examples thereof include a monomer polymer. Among these, a polymer of a polycyclic olefin monomer excellent in moisture resistance and chemical resistance is preferable, and among these, a norbornene-based monomer is particularly preferable from the viewpoint of heat resistance and mechanical strength of the cured resin composition.

  Further, the cationically polymerizable functional group of the cyclic olefin polymer or its hydrogenated product (A) is not particularly limited, and is an epoxy group, oxetanyl group, vinyl ether group, alkenyl group, alkynyl group, alkoxysilyl group. The epoxy group and the oxetanyl group are preferable from the viewpoint of photoresolution and mechanical strength after curing.

The monomer having such a cationically polymerizable functional group is not particularly limited, and examples thereof include an epoxy group such as 5-[(2,3-epoxypropoxy) methyl] -2-norbornene. As those having an oxetanyl group, 5-[{(3-ethyl-3-oxetanyl) methoxy} methyl] -2-norbornene and the like, and those having a vinyl ether group as 5-vinyloxymethyl-2-norbornene and the like Examples of those having an alkenyl group include 5-allyl-2-norbornene, 5-methylidene-2-norbornene, 5-ethylidene-2-norbornene, 5-isopropylidene-2-norbornene, and 5- (2-propenyl) -2. -Norbornene, 5- (3-butenyl) -2-norbornene, 5- (1-methyl-2-propenyl) -2 -Norbornene, 5- (4-pentenyl) -2-norbornene, 5- (1-methyl-3-butenyl) -2-norbornene, 5- (5-hexenyl) -2-norbornene, 5- (1-methyl- 4-pentenyl) -2-norbornene, 5- (2,3-dimethyl-3-butenyl) -2-norbornene, 5- (2-ethyl-3-butenyl) -2-norbornene, 5- (3,4 Dimethyl-4-pentenyl) -2-norbornene, 5- (7-octenyl) -2-norbornene, 5- (2-methyl-6-heptenyl) -2-norbornene, 5- (1,2-dimethyl-5- Hexenyl) -2-norbornene, 5- (5-ethyl-5-hexenyl) -2-norbornene, 5- (1,2,3-trimethyl-4-pentenyl) -2-norbornene, 8-ethylidene Torashikuro [4.4.0.1 ^2,5. 1 ^7,12] Dodekku-3-ene, 8-ethylidene tetracyclo [4.4.0.1 ^{2, 5.} 1 ^7,10 0 ^1,6 ] As having an alkynyl group such as dodec-3-ene, etc., as having an alkoxysilyl group such as 5-ethynyl-2-norbornene, dimethyl (5-norbornene-2- Yl) methoxysilane, 5-trimethoxysilyl-2-norbornene, 5-triethoxysilyl-2-norbornene, 5- (2-trimethoxysilylethyl) -2-norbornene, 5- (2-triethoxysilylethyl) Examples include 2-norbornene, 5- (3-trimethoxysilylpropyl) -2-norbornene, and 5- (4-trimethoxysilylbutyl) -2-norbornene.

  Furthermore, the polymer of cyclic olefin or its hydrogenated product (A) is not limited to the cyclic olefin monomer having a cationic polymerizable functional group, but also the cyclic olefin monomer having a cationic polymerizable functional group. Polymers with other monomers may also be used. From the viewpoint of photoresolution and mechanical strength after curing, the polymerization ratio of the cyclic olefin monomer having a photoreactive functional group is preferably 20 to 80 mol%, particularly preferably 30 to 70 mol%.

Further, the other monomer is not particularly limited, and examples thereof include those having an alkyl group such as 5-methyl-2-norbornene, 5-ethyl-2-norbornene, 5-propyl-2-norbornene. 5-butyl-2-norbornene, 5-pentyl-2-norbornene, 5-hexyl-2-norbornene, 5-heptyl-2-norbornene, 5-octyl-2-norbornene, 5-nonyl-2-norbornene, 5 -Decyl-2-norbornene and the like having a silyl group include 1,1,3,3,5,5-hexamethyl-1,5-dimethylbis (2- (5-norbornen-2-yl) ethyl) Examples of those having an aryl group such as trisiloxane, 5-trimethylsilylmethyl ether-2-norbornene, and the like include 5-phenyl-2- Examples of those having an aralkyl group such as rubornene, 5-naphthyl-2-norbornene, and 5-pentafluorophenyl-2-norbornene include 5-benzyl-2-norbornene, 5-phenethyl-2-norbornene, and 5-pentafluorophenyl. Methyl-2-norbornene, 5- (2-pentafluorophenylethyl) -2-norbornene, 5- (3-pentafluorophenylpropyl) -2-norbornene, etc., hydroxyl group, ether group, carboxyl group, ester group, acryloyl As those having a group or methacryloyl group, 5-norbornene-2-methanol and its alkyl ether, acetic acid 5-norbornene-2-methyl ester, propionic acid 5-norbornene-2-methyl ester, butyric acid 5-norbornene-2 -Mechi Esters, valeric acid 5-norbornene-2-methyl ester, caproic acid 5-norbornene-2-methyl ester, caprylic acid 5-norbornene-2-methyl ester, capric acid 5-norbornene-2-methyl ester, lauric acid 5- Norbornene-2-methyl ester, stearic acid 5-norbornene-2-methyl ester, oleic acid 5-norbornene-2-methyl ester, linolenic acid 5-norbornene-2-methyl ester, 5-norbornene-2-carboxylic acid, 5 -Norbornene-2-carboxylic acid methyl ester, 5-norbornene-2-carboxylic acid ethyl ester, 5-norbornene-2-carboxylic acid t-butyl ester, 5-norbornene-2-carboxylic acid i-butyl ester, 5-norbornene 2-Carboxylic acid trimethyl Rusilyl ester, 5-norbornene-2-carboxylic acid triethylsilyl ester, 5-norbornene-2-carboxylic acid isobornyl ester, 5-norbornene-2-carboxylic acid 2-hydroxyethyl ester, 5-norbornene-2-methyl 2-carboxylic acid methyl ester, cinnamic acid 5-norbornene-2-methyl ester, 5-norbornene-2-methylethyl carbonate, 5-norbornene-2-methyl n-butyl carbonate, 5-norbornene-2- Methyl t-butyl carbonate, 5-methoxy-2-norbornene, (meth) acrylic acid 5-norbornene-2-methyl ester, (meth) acrylic acid 5-norbornene-2-ethyl ester, (meth) acrylic acid 5- Norbornene-2-n-butyl ester, (meth) acte Luric acid 5-norbornene-2-n-propyl ester, (meth) acrylic acid 5-norbornene-2-i-butyl ester, (meth) acrylic acid 5-norbornene-2-i-propyl ester, (meth) acrylic acid 8-methoxycarbonyl as a 5-norbornene-2-hexyl ester, (meth) acrylic acid 5-norbornene-2-octyl ester, (meth) acrylic acid 5-norbornene-2-decyl ester, etc. Tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-ethoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-n-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-i-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-n-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8- (2-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8- (1-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-t-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-cyclohexyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8- (4′-t-butylcyclohexyloxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-phenoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-tetrahydrofuranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 8-tetrahydropyranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-methoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-ethoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-n-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-i-propoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-n-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8- (2-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8- (1-methylpropoxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-t-butoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-cyclohexyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8- (4′-t-butylcyclohexyloxy) carbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-phenoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-tetrahydrofuranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyl-8-tetrahydropyranyloxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 8-methyl-8-acetoxycarbonyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (methoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (ethoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (n-propoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (i-propoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (n-butoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (t-butoxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (cyclohexyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (phenoxyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8,9-di (tetrahydrofuranyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, 8,9-di (tetrahydropyranyloxycarbonyl) tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] -3-dodecene, tetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene-8-carboxylic acid, 8-methyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene-8-carboxylic acid, 8-methyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-ethyltetracyclo [4.4.0.1 ^2,5 . 1 ^7,10 ] dodec-3-ene, 8-methyltetracyclo [4.4.0.1 ^2,5 . 0 ^1,6 ] dodec-3-ene and the like.

  In addition, the polymerization form of the cyclic olefin monomer is not particularly limited, and known forms such as random polymerization and block polymerization can be applied. Further, the polymerization method includes addition polymerization and ring-opening polymerization. Legal etc. are mentioned. Specific examples of the polymer include (co) polymers of bicyclo [2.2.1] hept-2-ene derivative monomers such as one or more norbornene compounds, bicyclo [2.2.1] hepta. 2-ene derivative monomers and copolymers of other monomers capable of copolymerization such as α-olefins, and hydrogenated products of these copolymers. Therefore, an addition polymer of one or more bicyclo [2.2.1] hept-2-ene derivatives is preferable.

  The weight average molecular weight of the cyclic olefin polymer or hydrogenated product (A) thereof is not particularly limited, but is preferably about 5000 to 500000 from the viewpoint of solubility in a solvent and fluidity of the photosensitive resin composition. 7000 to 200,000 is particularly preferable. The weight average molecular weight can be measured using gel permeation chromatography (GPC) using standard polynorbornene (based on ASTM D3363-91).

  The weight average molecular weight of the polymer of cyclic olefin or its hydrogenated product (A) can be controlled by changing the ratio of the polymerization initiator to the monomer or changing the polymerization time.

  Here, by making the resin composition contain a compound (B) having a structure represented by the following general formula (5), not only the cured product of this composition has sufficient mechanical strength but also a coating When the part 22 is produced, the covering part 22 can have sufficient flatness.

（式中、Ｒ^１、Ｒ^２は有機基であり、同じでも異なっていてもよく、Ｒ^３〜Ｒ^１０はそれぞれ独立して水素原子あるいは炭素数１〜２のアルキル基またはアルコキシル基であり、Ｘ、Ｙ、Ｚは有機基であり、同じでも異なっていてもよく、Ｒ^１１は直結あるいは炭素数１〜６の炭化水素基または酸素を含んでいる炭素数１〜１２の有機基のいずれかであり、ｎは０〜６である。）

(Wherein R ¹ and R ² are organic groups which may be the same or different, and R ^{3 to} R ¹⁰ are each independently a hydrogen atom, an alkyl group having 1 to 2 carbon atoms or an alkoxyl group, X, Y and Z are organic groups which may be the same or different, and R ¹¹ is either a direct bond or a hydrocarbon group having 1 to 6 carbon atoms or an organic group having 1 to 12 carbon atoms containing oxygen. And n is 0-6.)

R ¹ and R ² in the general formula (5) are organic groups, which may be the same or different, each having 1 to 12 carbon atoms or an organic group having 1 to 12 carbon atoms containing oxygen. Groups are preferred. R ^{3 to} R ¹⁰ are each independently a hydrogen atom, an alkyl group having 1 to 2 carbon atoms, or an alkoxyl group. R ¹¹ is either a direct bond or a hydrocarbon group having 1 to 6 carbon atoms or an organic group having 1 to 12 carbon atoms containing oxygen, preferably a direct bond or a hydrocarbon group having 1 to 4 carbon atoms. . X, Y, and Z are organic groups, which may be the same or different. R ¹¹ is a hydrocarbon group having 1 to 6 carbon atoms or an organic group having 1 to 12 carbon atoms including oxygen, and n is 0. ~ 6. By adopting such a configuration, not only can a cured product of this product have sufficient mechanical strength, but also a sufficient flatness can be provided when the covering portion 22 is produced.

In the compound (B) having the structure represented by the general formula (5), the group Y which is an organic group is, for example, —C (CH ₃ ) ₂ —, —CH ₂ —, direct bond (dangling bond). , -COO-, -CONH-, etc., among which direct bonding, -COO-, or -CONH- is preferable. Examples of the group X and the group Z that are organic groups include —CO—, —C (CH ₃ ) ₂ —, —CH ₂ —, direct connection, —COO—, —CONH—, and the like. , -COO-, -CONH-, and preferably the same. The groups R ¹ and R ^{2 which} are organic groups are preferably epoxy groups, hydrocarbon groups having 1 to 12 carbon atoms, or organic groups having 1 to 12 carbon atoms including oxygen. Further preferred groups R ¹ and R ² of the general formula (5) have the structure of the following formula (6). These compounds (B) having the structure represented by the general formula (5) may be used alone or in combination of two or more. By using the compounds having these structures, when the covering portion 22 is produced, it is preferable because sufficient flatness and excellent mechanical strength can be imparted to the obtained covering portion 22. Furthermore, it is preferably used from the viewpoint of excellent compatibility of the resin composition with the solvent in the liquid material (varnish) containing the resin composition.

（式中、Ｒ^１２は、アルキル基である。）

(In the formula, R ¹² is an alkyl group.)

In the general formula (5), examples of the compound having the structure of the general formula (6) as the group R ¹ and the group R ² include 3-ethyl-3-phenoxymethyloxetane, 3-ethyl-3-cyclohexane. Siloxymethyloxetane, 3-ethyl-3-[(2-ethylhexyloxy) methyl] oxetane, 1,4-bis {[(3-ethyl-3-oxetanyl) methoxy] methyl} benzene, 4,4-bis [ (3-ethyl-3-oxetanyl) methoxy] biphenyl, phenol novolac oxetane and the like.

  Among these, 1,4-bis {[(3-ethyl-3-oxetanyl) methoxy] methyl} benzene, 4,4-bis [(3-ethyl-3-oxetanyl) methoxy] biphenyl, and phenol novolac oxetane 4,4-bis [(3-ethyl-3-oxetanyl) methoxy] biphenyl, isophthalic acid bis [(3-ethyl-3-oxetanyl) methyl] ester, and the like are particularly preferable.

  The content of the compound (B) having the structure represented by the general formula (5) in the resin composition is not particularly limited, but from the viewpoint of compatibility with the solvent in the liquid material containing the resin composition. The amount of the cyclic olefin polymer or its hydrogenated product (A) is preferably from 1 to 30 parts by weight, particularly preferably from 5 to 10 parts by weight.

  In addition, the resin composition containing the polymer of cyclic olefin or its hydrogenated product (A) and the compound (B) having the structure represented by the general formula (5) includes a compound (C) that generates an acid. It is preferable.

  The compound (C) that generates an acid generates a Bronsted acid or a Lewis acid by light irradiation or heat. Specific examples include onium salts, halogen compounds, sulfates, and mixtures thereof. Examples of onium salts include diazonium salts, ammonium salts, iodonium salts, sulfonium salts, phosphates, arsonium salts, oxonium salts, and the like. There is no limit. Examples of the counter anion include boric acid, arsonium acid, phosphoric acid, antimonic acid, sulfate, carboxylic acid and their halogen-substituted products.

  The acid generator of the onium salt is not particularly limited, and is triphenylsulfonium tetrafluoroborate, triphenylsulfonium hexafluoroborate, triphenylsulfonium tetrafluoroarsenate, triphenylsulfonium tetrafluorophosphate, triphenyl. Nylsulfonium tetrafluorosulfate, 4-thiophenoxydiphenylsulfonium tetrafluoroborate, 4-thiophenoxydiphenylsulfonium tetrafluoroantimonate, 4-thiophenoxydiphenylsulfonium tetrafluoroarsenate, 4-thiophenoxydiphenyl Sulfonium tetrafluorophosphate, 4-thiophenoxydiphenylsulfonium tetrafluorosulfonate, Lis (t-butylphenyl) sulphonium tetrakis (pentafluorophenyl) borate, 4-t-butylphenyldiphenylsulphonium tetrafluoroborate, 4-t-butylphenyldiphenylsulphonium tetrafluorosulphonate, 4-t -Butylphenyldiphenylsulfonium tetrafluoroantimonate, 4-t-butylphenyldiphenylsulfonium trifluorophosphonate, 4-t-butylphenyldiphenylsulfonium trifluorosulfonate, tris (4-methylphenyl) sulfone Phonium trifluoroborate, 4,4 ′, 4 ″ -tris (t-butylphenyl) sulfonium triflate, tris (4-methylphenyl) sulfonium tetrafluoroborate, tris 4-methylphenyl) sulfonium hexafluoroarsenate, tris (4-methylphenyl) sulfonium hexafluorophosphate, tris (4-methylphenyl) sulfonium hexafluorosulfonate, tris (4-methoxyphenyl) ) Sulfonium tetrafluoroborate, tris (4-methoxyphenyl) sulfonium hexafluoroantimonate, tris (4-methoxyphenyl) sulfonium hexafluorophosphate, tris (4-methoxyphenyl) sulfonium trifluoros Ruphonate, triphenylsulfonium diphenyliodonium tetrakis (pentafluorophenyl) borate, diphenyliodonium tetrakis (pentafluorophenyl) borate, tripheny Ruiodonium tetrafluoroborate, triphenyliodonium hexafluoroantimonate, triphenyliodonium hexafluoroarsenate, triphenyliodonium hexafluorophosphate, triphenyliodonium trifluorosulfonate, 3,3-dinitrodiphenyliodonium tetrafluoroborate, 3 , 3-dinitrodiphenyliodonium hexafluoroantimonate, 3,3-dinitrodiphenyliodonium hexafluoroarsenate, 3,3-dinitrodiphenyliodonium trifluorosulfonate, 4,4′-di-t-butylphenyliodonium triflate, 4,4′-di-t-butylphenyliodonium tetrakis (pentafluorophenyl) borate, 4,4 Dinitrodiphenyliodonium tetrafluoroborate, 4,4-dinitrodiphenyliodonium hexafluoroantimonate, 4,4-dinitrodiphenyliodonium hexafluoroarsenate, 4,4-dinitrodiphenyliodonium trifluorosulfonate, (4-methylphenyl-4 -(1-methylethyl) phenyliodonium tetrakis (pentafluorophenyl) borate and the like can be mentioned, and one or more of these can be used in combination.

  Examples of the acid generator containing halogen include 2,4,6-tris (trichloromethyl) triazine, 2-allyl-4,6-bis (trichloromethyl) triazine, α, β, α-tribromo. Methylphenylsulfone, α, α-2,3,5,6-hexachloroxylene, 2,2-bis (3,5-dibromo-4-hydroxyphenyl) -1,1,1,3,3,3-hexa Fluoroxylene, 1,1,1-tris (3,5-dibromo-4-hydroxyphenyl) ethane and the like can be mentioned, and one or more of these can be used in combination.

  Specific examples of the sulfonate-based acid generator include 2-nitrobenzyl tosylate, 2,6-dinitrobenzyl tosylate, 2,4-dinitrobenzyl tosylate, 2-nitrobenzyl methanesulfonate, 2- Nitrobenzyl ethanesulfonate, 9,10-dimethoxyanthracene-2-sulfonate, 1,2,3-tris (methanesulfonylloxy) benzene, 1,2,3-tris (ethanesulfonylloxy) benzene, 1,2, 3-tris (propanesulfonylloxy) benzene and the like can be mentioned, and one or more of these can be used in combination.

  Among the acid generators as described above, 4,4′-di-t-butylphenyliodonium triflate, 4,4 ′, 4 ″ -tris (t-butylphenyl) sulfonium triflate, diphenyliodonium tetrakis ( Pentafluorophenyl) borate, triphenylsulfonium diphenyliodonium tetrakis (pentafluorophenyl) borate, 4,4′-di-t-butylphenyliodonium tetrakis (pentafluorophenyl) borate, tris (t-butylphenyl) sulfonyltetrakis One or more selected from (pentafluorophenyl) borate, 4-methylphenyl-4- (1-methylethyl) phenyliodonium tetrakis (pentafluorophenyl) borate alone or a mixture thereof Used Mashiku.

  Further, the content of the compound (C) that generates acid in the resin composition is not particularly limited, but the action of the polymer of cyclic olefin or its hydrogenated product (A) and the compound (C) that generates acid. Is preferably from 0.1 to 20 parts by weight, particularly preferably from 0.5 to 10 parts by weight, based on a total of 100 parts by weight of the compound capable of curing reaction. When the content is in the above range, the opening shape after photo-resolution and the sensitivity (patterning property of the covering portion 22) are particularly excellent.

  The weight average molecular weight of the compound capable of undergoing a curing reaction by the action of the acid-generating compound (C) is not particularly limited, but is preferably 1000 or less, particularly preferably 100 to 600.

  Further, the compounding amount of the compound capable of undergoing a curing reaction by the action of the compound (C) that generates an acid is not particularly limited, but a polymer of a cyclic olefin having a photoreactive functional group or a hydrogenated product thereof ( A) It is preferable that it is 1-50 weight part with respect to 100 weight part, and 10-40 weight part is especially preferable.

  The resin composition as described above is usually used in the form of a liquid material (varnish) by dissolving the aforementioned components in a solvent.

  Examples of the solvent include a non-reactive solvent that acts as a carrier for the resin composition and is removed after application to the sheet material 25 ′ and in the curing process, and a reactive solvent containing a reactive group compatible with the resin composition. Can be mentioned.

  The non-reactive solvent is not particularly limited, and examples include alkanes such as pentane, hexane, heptane, cyclohexane and decahydronaphthalene, cycloalkanes, and aromatics such as benzene, toluene, xylene and mesitylene. . If necessary, diethyl ethers, tetrahydrofuran, anisole, acetates, esters, lactones, ketones, amides, and the like can also be used.

  The reactive solvent is not particularly limited, but is a cycloether compound such as cyclohexene oxide or α-pinene oxide, an aromatic cycloether such as [methylenebis (4,1-phenyleneoxymethylene)] bisoxirane, 1 And cycloaliphatic vinyl ether compounds such as 4-cyclohexanedimethanol divinyl ether and aromatics such as bis (4-vinylphenyl) methane.

  Among these, mesitylene, decahydronaphthalene, and 2-heptanone are preferable from the viewpoint of applicability of the resin composition to the sheet material 25 ′.

  The liquid material containing the resin composition containing the polymer of cyclic olefin or its hydrogenated product (A) and the compound (B) having the structure represented by the general formula (5) has a solid content concentration of 5 It is preferably ˜60 wt%, particularly preferably 30 to 55 wt%, and the viscosity is preferably 10 to 25000 mPa · s, particularly preferably 100 to 3000 mPa · s. By setting it within the above range, it is possible to ensure applicability to the dummy substrate 101.

  [11] Next, as shown in FIG. 5A, the bump 21 is formed so as to be electrically connected to the wiring 23 exposed from the opening 221 (bump connection step).

  Here, as in the present embodiment, the connection between the conductor post 24 and the bump 21 is performed via the wiring 23, so that the bump 21 is connected to the conductor post 24 in the surface direction of the sheet material 25 ′. Can be arranged in different positions. In other words, the bumps 21 and the conductor posts 24 can be arranged so that the central portions do not overlap. Therefore, since the bumps 21 can be formed at desired positions on both the upper surface and the lower surface of the package 20 to be obtained, the range of selection of the types of packages stacked on the package 20 is widened. In addition, the number of output pins of the package can be increased.

  A method for bonding the bump 21 to the wiring 23 is not particularly limited. For example, the bump 21 is bonded by a viscous flux between the bump 21 and the wiring 23.

  In addition, examples of the constituent material of the bump 21 include a solder material such as solder, silver solder, copper solder, and phosphor copper solder.

  [12] Next, as shown in FIG. 5B, by separating the semiconductor element sealing body 270 provided with the covering portion 22 and the like so as to correspond to each semiconductor element 26, a plurality of pieces are obtained. The semiconductor package 20 is obtained collectively (individualization step).

For example, the semiconductor element sealing body 270 is separated into pieces by using, for example, a dicing saw in the thickness direction of the semiconductor element sealing body 270, the sealing portion 27, the two sheet members 25 ′, and the two covering portions 22. This can be done by cutting.
Through the steps as described above, a plurality of semiconductor packages 20 are manufactured.

  According to such a manufacturing method of the semiconductor package 20, it is possible to collectively manufacture the semiconductor package 20 including the semiconductor element 26 and the conductor pillar 28 and capable of electrical connection in the vertical direction.

  Further, in the step [1], the semiconductor element 26 disposed on the dummy substrate 101 is configured to select a semiconductor element 26 that has been determined as a non-defective product by performing an evaluation test in advance. The semiconductor package 20 is highly reliable.

  In the present embodiment, the case where the sheet material 25 ′, the conductor post 24, the wiring 23, the covering portion 22, and the bump 21 are provided on both the upper side and the lower side of the semiconductor element sealing body 270 has been described. It is not limited to these, You may make it provide these in either one.

Second Embodiment
Next, a second embodiment of a manufacturing method for manufacturing the package 20 will be described.

  That is, in the second embodiment of the manufacturing method of the package 20, a flat sheet material is prepared, and the semiconductor element is arranged on the sheet material so that the electrode pad is on the sheet material side, A semiconductor element disposing step of forming a sacrificial layer containing a resin component that decomposes and vaporizes by heating corresponding to the shape of the conductor pillar at a position where the conductor pillar is to be formed; and the semiconductor element is disposed; And a sealing part forming step of sealing the surface of the sacrificial layer so as to cover the sheet material, the semiconductor element, and the sacrificial layer to form a sealing part, and the electrode pad And a through-hole forming step of forming a plurality of second through-holes in the thickness direction of the sheet material so as to correspond to the sacrificial layer, and the resin component is decomposed and vaporized by heating the sacrificial layer Removed by letting Then, after forming the first through hole at the position where the conductive column of the sealing portion is to be formed, the conductive column is formed in the first through hole, whereby the semiconductor element sealing body is formed. A conductive pillar forming step, a conductive post forming step of forming a conductive post having conductivity in the second through-hole, and a surface of the sheet material opposite to the semiconductor element sealing body; A wiring forming step for forming a wiring to be connected; a covering portion forming step for forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element sealing body; A plurality of semiconductor packages can be obtained collectively by separating the semiconductor element sealing body so as to correspond to the bump connection step for electrically connecting the bumps to the wiring exposed at the part and for each semiconductor element. And a singulation process.

  8 to 10 are longitudinal sectional views for explaining a second embodiment of the semiconductor package manufacturing method of the present invention for manufacturing a plurality of semiconductor packages 20 having conductor pillars 28 in a lump. In the following description, the upper side in FIGS. 8 to 10 is referred to as “upper” and the lower side is referred to as “lower”.

  [1 ′] First, a sheet material 25 ′ having a flat plate shape as shown in FIG. 8A is prepared, and a plurality of semiconductor elements 26 are provided on the sheet material 25 ′. A sacrificial layer 38 is formed at a position where the conductor pillar 28 is to be formed corresponding to the shape of the conductor pillar 28 (not shown) on the sheet material 25 'side (FIG. 8). (B) Reference: semiconductor element arrangement step).

  The arrangement of the semiconductor element 26 on the sheet material 25 ′ and the formation of the sacrificial layer 38 are performed when the semiconductor element 26 is arranged on the dummy substrate 101 and the sacrificial layer 38 is formed in the step [1]. It can be performed using a method similar to that described above.

  As the sheet material 25 ′, the same material as the sheet material 25 ′ disposed on the lower surface of the semiconductor element sealing body 270 in the step [7] can be used.

  The semiconductor element 26 may or may not be fixed on the sheet material 25 ', but is preferably fixed with an adhesive such as an epoxy adhesive. Thereby, when the semiconductor element 26 is sealed by the sealing portion 27 in the next step [3 ′], it is possible to effectively prevent the positional deviation of the semiconductor element 26 from occurring.

  [2 ′] Next, the sheet material 25 ′, the semiconductor element 26, and the sacrificial layer 38 are covered with the upper surface of the sheet material 25 ′, that is, the surface on which the semiconductor element 26 is disposed and the sacrificial layer 38 is provided. Thus, the sealing portion 27 is formed (see FIG. 8C; sealing portion forming step).

  As a method for forming the sealing portion 27 on the sheet material 25 ′, the same method as described as the method for forming the sealing portion 27 on the dummy substrate 101 in the step [2] can be used. .

  [3 '] Next, as shown in FIG. 8D, a plurality of second through holes 251 penetrating in the thickness direction are formed in the sheet material 25' (through hole forming step).

  The second through hole 251 is formed at a position corresponding to the electrode pad of the semiconductor element 26 and a position corresponding to the sacrificial layer 38 on the sheet material 25 ′.

  In addition, as a method of forming the second through hole 251 in the sheet material 25 ′, the same method as described in the step [6] can be used.

  [4 ′] Next, as shown in FIG. 8E, the sacrificial layer 38 is removed by heating, and the first through hole is formed at a position where the conductor column 28 of the sealing portion 27 is to be formed. After forming 271, as shown in FIG. 8 (f), the conductor column 28 is formed in the first through hole 271 (conductor column forming step).

  Further, as a method of forming the first through hole 271 and further forming the conductor pillar 28 in the first through hole 271, the same method as described in the step [4] can be used. .

  In this embodiment as well, the sacrificial layer 38 is exposed on the lower surface of the sealing portion 27 through the first through-hole 271, so that the sacrificial layer 38 can be reliably heated by heating in this step. Can be removed.

  [5 ′] Next, as shown in FIG. 8G, the upper surface of the sealing portion 27 is ground and / or polished until the end on the upper surface side of the conductor column 28 is exposed (grinding / polishing step). ).

  As a result, the conductive pillar 28 that functions as a terminal electrically connected to the package mounted on the upper side of the package 20 via the bumps 21 is exposed on the upper surface side of the obtained package 20.

  The sealing portion 27 can be ground and / or polished using, for example, a grinder provided in a grinding device (grinder).

  Thereby, a semiconductor element sealing body 270 ′ in which the sheet material 25 ′, the semiconductor element 26, and the conductor column 28 are sealed by the sealing portion 27 on the upper surface side of the sheet material 25 ′ is obtained.

  The semiconductor element placement step [1 ′], the sealing portion formation step [2 ′], the through hole formation step [3 ′], the conductor column formation step [4 ′], and the grinding / polishing step [4 ′]. The semiconductor element sealing body 270 ′ in which the sheet material 25 ′, the plurality of semiconductor elements 26, and the plurality of conductor columns 28 are sealed by the sealing portion 27 on the upper surface side of the sheet material 25 ′ is manufactured. 2nd Embodiment of the manufacturing method of a semiconductor element sealing body is comprised.

  [6 ′] Next, in the next step [7 ′], a sheet material 25 ′ having a flat plate shape to be disposed on the upper side of the semiconductor element sealing body 270 ′ is prepared. After forming the second through-hole 251 penetrating in the direction, as shown in FIG. 9A, the sheet material 25 ′ is disposed above the semiconductor element sealing body 270 ′ (through-hole forming step).

The second through hole 251 is formed at a position corresponding to the conductor column 28.
Further, as the sheet material 25 ′, the same material as the sheet material 25 ′ disposed on the upper surface of the semiconductor element sealing body 270 in the step [7] can be used.

  Furthermore, as a method of forming the second through hole 251 in the sheet material 25 ′, the same method as described in the method of forming the second through hole 251 in the sheet material 25 ′ in the step [6]. Can be used.

  [7 '] Next, as shown in FIG. 9B, conductive posts 24 having conductivity are formed in the second through holes 251 provided in the two sheet members 25' (conductor post forming step).

  As a method for forming the conductor post 24, the same method as described in the step [8] can be used.

  [8 ′] Next, as shown in FIG. 9 (c), the two sheet members 25 ′ are electrically connected to the conductor post 24 on the opposite side of the semiconductor element sealing body 270 ′. Then, the wiring 23 patterned into a predetermined shape is formed (wiring forming step).

  As a method of forming the wiring 23, the same method as described in the step [9] can be used.

  [9 ′] Next, as shown in FIG. 9D, a part of the wiring 23 is exposed on the surface of the two sheet members 25 ′ opposite to the semiconductor element sealing body 270 ′. The covering portion 22 including the opening 221 is formed (covering portion forming step).

  The opening 221 is formed so as to correspond to the position where the bump 21 is formed in the next step [10 '].

  As a method for forming the covering portion 22, the same method as described in the step [10] can be used.

  [10 '] Next, as shown in FIG. 10A, the bump 21 is formed so as to be electrically connected to the wiring 23 exposed from the opening 221 (bump connection step).

  As a method for forming the bump 21, the same method as described in the step [11] can be used.

  [11 ′] Next, as shown in FIG. 10B, the semiconductor element sealing body 270 ′ provided with the covering portion 22 and the like so as to correspond to each semiconductor element 26 is separated into a plurality of pieces. The semiconductor packages 20 are collectively obtained (individualization step).

For the separation of the semiconductor element sealing body 270, the same method as described as the method for separating the semiconductor element sealing body 270 in the step [12] can be used.
The semiconductor package 20 is manufactured through the above processes.

  According to such a manufacturing method of the semiconductor package 20, it is possible to collectively manufacture the semiconductor package 20 including the semiconductor element 26 and the conductor pillar 28 and capable of electrical connection in the vertical direction.

  Further, in the step [1 ′], the semiconductor element 26 arranged on the sheet material 25 ′ is configured to select a semiconductor element 26 that has been evaluated in advance and determined to be a non-defective product. The obtained semiconductor packages 20 are highly reliable.

  In the step [3 ′], the second through hole 251 is directly formed in the sheet material 25 ′ in which the semiconductor element 26 is disposed and the sacrificial layer 38 is formed. In the step [7 ′] A conductor post 24 is formed in the second through hole 251. Therefore, as in the method of manufacturing the semiconductor package 20 of the first embodiment, the semiconductor element sealing body 270 is removed from the dummy substrate 101, and the sheet material 25 ′ for forming the conductor post 24 is further replaced with the semiconductor element sealing body. Since it is not necessary to stick to 270, it is possible to reduce the number of processes when manufacturing a plurality of semiconductor packages 20 in a lump, so that the productivity of the semiconductor package 20 can be improved.

  In the present embodiment, the case where the sheet material 25 ′, the conductor post 24, the wiring 23, the covering portion 22, and the bumps 21 are provided on the upper side of the semiconductor element sealing body 270 has been described. The formation on the upper side of the body 270 can also be omitted. In this case, the step [6 '] is omitted.

  The semiconductor device 30 including the semiconductor package 20 manufactured by the method for manufacturing a semiconductor element encapsulant of the present invention and the method for manufacturing a semiconductor package of the present invention includes, for example, a mobile phone, a digital camera, a video camera, a car navigation system, It can be widely used in personal computers, game machines, liquid crystal televisions, liquid crystal displays, organic electroluminescence displays, printers and the like.

  As mentioned above, although the manufacturing method of the semiconductor element sealing body of this invention and the manufacturing method of the semiconductor package of this invention were demonstrated, this invention is not limited to these.

  For example, in the embodiment, the case where the package 10 and the package 20 each include one semiconductor element 16 and the semiconductor element 26 has been described. However, the present invention is not limited to this case, and each of the packages 10 and 20 includes two or more packages. You may provide the same or different semiconductor element. With this configuration, the packages 10 and 20 can be enhanced in function and multifunction.

  In the above embodiment, the case where the semiconductor package manufacturing method of the present invention is applied to the manufacture of the semiconductor package 20 included in the POP (Package On Package) type semiconductor device 30 has been described. For example, a semiconductor package provided in a semiconductor device such as a CSP (Chip Size Package) type semiconductor device, a BGA (Ball Grid Array) type semiconductor device, or an FBGA (Fine Pitch Ball Grid Array). Can be applied to.

  In addition, one or more processes for any purpose may be added to the method for manufacturing a sealed semiconductor element according to the present invention and the method for manufacturing a semiconductor package according to the present invention.

DESCRIPTION OF SYMBOLS 10,20 Package 12,22 Cover part 121,221 Opening part 13,23 Wiring 142 Mask 14,24 Conductor post 15,25 Interposer 151,251 Through-hole 16,26 Semiconductor element 17,27 Sealing part 21 Bump 25 ' Sheet material 270, 270 ′ Semiconductor element sealing body 28 Conductor pillar 30 Semiconductor device 501 Vibration feeder 502 Resin material supply container 503 Epoxy resin composition 504 Lower mold cavity 600 Package 101, 601 Dummy substrate 102, 602 Adhesive layer 610 Sealing body 611 Bump 612 Second covering layer 613 Wiring 614 Conductor post 615 First covering layer 616 Semiconductor element 617 Sealing part 622 Opening part 625 Through hole

Claims (10)

A method for producing a semiconductor element sealing body, comprising: a plurality of semiconductor elements having at least one electrode pad; a plurality of conductive pillars having conductivity; and a sealing portion for sealing the semiconductor elements and the conductor pillars. And
A dummy substrate having a flat plate shape is prepared, and the semiconductor element is arranged on the dummy substrate so that the electrode pad is on the dummy substrate side, and a sacrifice containing a resin component that decomposes and vaporizes by heating. A semiconductor element disposing step of forming a layer corresponding to the shape of the conductor pillar at a position where the conductor pillar is to be formed;
A sealing portion that forms a sealing portion by sealing the dummy substrate, the semiconductor element, and the sacrificial layer on a surface on which the semiconductor element is disposed and the sacrificial layer is formed. Forming process;
A peeling step of peeling the dummy substrate from the sealing portion, the semiconductor element, and the sacrificial layer;
The sacrificial layer is removed by decomposing and vaporizing the resin component by heating to form a first through hole at a position where the conductive column of the sealing portion is to be formed. by forming the conductor post to one through-hole, and the conductor post forming step of obtaining the semiconductor element sealing material,
And a grinding / polishing step of grinding and / or polishing a surface of the sealing portion on which the conductor column is not exposed so that both ends of the conductor column are exposed. Manufacturing method of element sealing body. In the semiconductor element arranging step, the sacrificial layer supplies a liquid material containing a resin composition containing the resin component and an activator that generates active species upon irradiation with active energy rays onto the dummy substrate. A first step of drying to form a thin film;
A second step of lowering the 50% weight loss temperature of the resin component by irradiating the active energy ray to the thin film located in a region where the sacrificial layer is not formed;
By passing through the third step of removing the thin film located in the region by heating the thin film and selectively decomposing and vaporizing the resin component contained in the thin film located in the region. semiconductor device manufacturing method of the sealing body according to claim 1 is formed. In the sealing part forming step, the semiconductor element is disposed in the sealing part so as to cover the dummy substrate , the semiconductor element, and the sacrificial layer in a state where the granular epoxy resin composition is melted. and after supplying the surface on which the sacrificial layer is formed, the manufacture of semiconductor element encapsulation of claim 1 or 2 is formed by compression molding the epoxy resin composition of the molten state Method. In the conductor post forming step, the conductor posts, the semiconductor device manufacturing method of the sealing body according to any one of claims 1 to 3 is formed by electrolytic plating. A sheet material in which a plurality of second through holes are formed, a plurality of semiconductor elements disposed on the sheet material and having at least one electrode pad, and a plurality of conductive pillars disposed on the sheet material and having conductivity. And a manufacturing method of a semiconductor element sealing body having a sealing portion for sealing the semiconductor element and the conductor column,
A sacrificial material containing a resin component that is prepared as a flat sheet material, and the semiconductor element is disposed on the sheet material so that the electrode pad is on the sheet material side and is decomposed and vaporized by heating. A semiconductor element disposing step of forming a layer corresponding to the shape of the conductor pillar at a position where the conductor pillar is to be formed;
A sealing portion that forms a sealing portion by sealing the sheet material, the semiconductor element, and the sacrificial layer on a surface on which the semiconductor element is disposed and the sacrificial layer is formed. Forming process;
A through hole forming step of forming a plurality of second through holes in the thickness direction of the sheet material so as to correspond to the electrode pad and the sacrificial layer;
The sacrificial layer is removed by decomposing and vaporizing the resin component by heating to form a first through hole at a position where the conductive column of the sealing portion is to be formed. by forming the conductor post to one through-hole, and the conductor post forming step of obtaining the semiconductor element sealing material,
And a grinding / polishing step of grinding and / or polishing a surface of the sealing portion on which the conductor column is not exposed so that both ends of the conductor column are exposed. Manufacturing method of element sealing body. Claims 1 prepared a semiconductor element sealing body manufactured by the manufacturing method of the semiconductor element encapsulation material according to any one of 4, and a plurality of second through-holes in the thickness direction is formed a sheet material And a sheet material laminating step of laminating the sheet material to the semiconductor element sealing body so that the electrode pads and the conductor pillars correspond to the second through holes,
A conductor post forming step of forming a conductive post having conductivity in the second through hole;
A wiring forming step of forming a wiring electrically connected to the conductor post on the surface of the sheet material opposite to the semiconductor element sealing body;
A covering portion forming step of forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element sealing body;
The wire exposed at the opening, the bump connecting step of electrically connecting the bumps,
A method for manufacturing a semiconductor package, comprising: a step of individually obtaining a plurality of semiconductor packages by dividing the semiconductor element sealing body into pieces so as to correspond to each semiconductor element. . Preparing a semiconductor element sealing body manufactured by the method for manufacturing a semiconductor element sealing body according to claim 5 , and forming a conductive post having conductivity in the second through hole; and
A wiring forming step of forming a wiring electrically connected to the conductor post on the surface of the sheet material opposite to the semiconductor element sealing body;
A covering portion forming step of forming a covering portion having an opening so that a part of the wiring is exposed on a surface opposite to the semiconductor element sealing body;
The wire exposed at the opening, the bump connecting step of electrically connecting the bumps,
A method for manufacturing a semiconductor package, comprising: a step of individually obtaining a plurality of semiconductor packages by dividing the semiconductor element sealing body into pieces so as to correspond to each semiconductor element. . The method of manufacturing a semiconductor package according to claim 6 or 7 , wherein, in the conductor post forming step, the conductor post is formed by an electrolytic plating method. In the wiring forming step, the wiring method of manufacturing a semiconductor package according to any one of claims 6 to 8 is formed by electrolytic plating. Wherein the conductor posts and said bump, in the planar direction of the sheet material, method of manufacturing a semiconductor package according to any one of claims 6 to 9 are formed in different positions.

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