JP2019060958A - Patterning method and method for manufacturing semiconductor device - Google Patents

Abstract

To provide a patterning method of a photosensitive resin layer by which a through hole can be formed while avoiding a reverse-tapered shape of the side face, and a method for manufacturing a semiconductor device having a resin film with a through hole formed therein and a conductive part disposed in the through hole, by which a percentage defective can be reduced.SOLUTION: The patterning method of the present invention includes: a resin layer disposition step of disposing a photosensitive resin composition showing a melt viscosity of 5 Pa s or less measured under the measurement conditions of a temperature elevation rate of 5°C/min, a frequency of 0.1 Hz and a heating temperature of 30 to 150°C, on a base to obtain a photosensitive resin layer; an exposure step of exposing the photosensitive resin layer after the resin layer disposition step; a post-exposure heating step of subjecting the photosensitive resin layer after the exposure step to a heating treatment at 50 to 90°C; and a development step of developing the photosensitive resin layer after the post-exposure heating step.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a patterning method and a method of manufacturing a semiconductor device.

  For the semiconductor element, a resin film made of a resin material is used for applications such as a protective film, an interlayer insulating film, and a planarization film. Further, depending on the mounting method of the semiconductor element, thickening of these resin films is required. However, when the resin film is thickened, warpage of the semiconductor chip tends to occur.

  On the other hand, there is known a technique of forming a pattern on a resin film by imparting photosensitivity and light transparency to the resin film. Thereby, the target pattern can be formed with high accuracy.

  Then, development of the resin composition which can manufacture the resin film which has photosensitivity and can be thickened is furthered.

  For example, Patent Document 1 discloses a photosensitive resin composition which is excellent in light transmittance and can suppress warpage of a semiconductor chip by optimizing the molecular structure and reducing the residual stress. The photosensitive resin composition is in the form of a liquid, is applied onto a substrate by spin coating, and is then dried and subjected to exposure processing and development processing. Thereby, patterning corresponding to the exposure pattern is performed.

JP 2003-209104 A

  On the other hand, a photoacid generator is added to the photosensitive resin composition described in Patent Document 1. Such a photoacid generator absorbs light to generate an acid, and causes the polymerization reaction of the resin to proceed by the catalytic action of the acid.

  However, since the acid generated in this manner diffuses in the photosensitive resin composition, a part of the acid generated in the exposed area also spreads to the unexposed area near the boundary between the exposed area and the unexposed area. It will be. As a result, the polymerization reaction of the resin proceeds while slightly protruding into the non-exposed area, and the boundary of the processed area in the development processing also shifts toward the non-exposed area. As a result, the processing accuracy of the resin film is reduced.

  In addition, after processing the through holes in the resin film as described above, a process of forming a through wiring or the like may be added by forming a conductive portion in the through holes. In the formation of the conductive portion, a method is used in which a seed layer is deposited on the inner surface of the through hole, and then metal is deposited on the seed layer by electrolytic plating. In this method, it is necessary to deposit the seed layer on the inner surface of the through hole as closely as possible. For this reason, when processing a resin film, processing a seed layer in the shape which is easy to vapor-deposit is calculated | required.

  However, when the boundary of the processing area is deviated as described above, the side surface of the through hole tends to be in a shape (inverse tapered shape) which is inward as it is closer to the opening of the through hole. With this reverse tapered shape, the seed layer is less likely to be deposited on the side surfaces of the through holes, and the deposition failure of the seed layer occurs. Such vapor deposition defects also affect the deposition of metal by electrolytic plating, and may lead to an increase in the fraction defective in the formation of conductive portions filled in the through holes.

  The object of the present invention is to provide a method of patterning a photosensitive resin layer capable of forming a through hole so that the side surface is not reverse tapered, a resin film having the through hole formed therein, and a conductive portion provided in the through hole. It is an object of the present invention to provide a manufacturing method capable of reducing the defect rate in the manufacture of a semiconductor device having the

Such an object is achieved by the present invention of the following (1) to (7).
(1) A photosensitive resin composition having a melt viscosity of 5 Pa · s or less measured under the measurement conditions of a temperature increase rate of 5 ° C./min, a frequency of 0.1 Hz and a heating temperature of 30 to 150 ° C. A resin layer disposing step of obtaining a photosensitive resin layer;
An exposure step of subjecting the photosensitive resin layer to exposure processing after the resin layer disposing step;
A post-exposure heating step of applying a heat treatment of heating the photosensitive resin layer at 50 to 90 ° C. after the exposure step;
A development step of developing the photosensitive resin layer after the post-exposure heating step;
A patterning method comprising:

  (2) The patterning method as described in said (1) whose time of the said heat processing is 1 to 30 minutes.

  (3) The pressure of the said heat processing is a patterning method as described in said (1) or (2) which is normal pressure.

(4) The patterning method according to any one of the above (1) to (3), wherein the exposure dose for the exposure processing is 100 to 2000 mJ / cm ² .

  (5) The patterning method according to any one of the above (1) to (4), wherein the photosensitive resin composition is in the form of a varnish or a film.

(6) obtaining a resin film having a through hole formed by the patterning method according to any one of (1) to (5) above;
Forming a conductive portion in the through hole;
A method of manufacturing a semiconductor device, comprising:

(7) placing a semiconductor chip on a substrate;
Obtaining a resin film having a through hole formed by the patterning method according to any one of the above (1) to (5) so as to embed the semiconductor chip;
Forming a conductive portion in the through hole;
A method of manufacturing a semiconductor device, comprising:

  According to the present invention, it is possible to obtain a photosensitive resin layer including a through hole formed so that the side surface does not have a reverse taper shape.

  Further, according to the present invention, the defect rate can be reduced in the manufacture of a semiconductor device provided with a resin film provided with a through hole and a conductive portion provided in the through hole.

It is a longitudinal cross-sectional view which shows an example of the semiconductor device manufactured by embodiment of the manufacturing method of the semiconductor device of this invention. It is the elements on larger scale of the area | region enclosed by the chain line of FIG. It is process drawing which shows the method of manufacturing the semiconductor device shown in FIG. It is a figure for demonstrating the method to manufacture the semiconductor device shown in FIG. It is a figure for demonstrating the method to manufacture the semiconductor device shown in FIG. It is a figure for demonstrating the method to manufacture the semiconductor device shown in FIG. It is a figure for demonstrating the method to manufacture the semiconductor device shown in FIG. It is a figure for demonstrating the method to manufacture the semiconductor device shown in FIG. An example of the melt viscosity curve of the photosensitive resin composition is shown. FIG. 10 (a) is a partial enlarged view of FIG. 5 (g), and FIG. 10 (a) is a view showing a state in which the inner surface of the opening is in an inverse tapered shape; It is a figure which shows the state which has become a taper shape. They are an observation image (a) of the cross section of the test piece obtained by the comparative example 2, and the observation image (b) of the cross section of the test piece obtained in Example 2. FIG.

  Hereinafter, the patterning method of the present invention and the method of manufacturing a semiconductor device will be described in detail based on preferred embodiments shown in the attached drawings.

<Semiconductor device>
First, an example of a semiconductor device manufactured by a method of manufacturing a semiconductor device according to an embodiment described later will be described.

  FIG. 1 is a longitudinal sectional view showing an example of a semiconductor device manufactured by the embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 2 is a partially enlarged view of a region surrounded by a dashed line in FIG. In the following description, the upper side in FIG. 1 is referred to as “upper” and the lower side as “lower”.

  A semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

  Among them, the through electrode substrate 2 includes an organic insulating layer 21 (resin film), a plurality of through wires 221 penetrating the upper surface to the lower surface of the organic insulating layer 21, and a semiconductor chip 23 embedded in the organic insulating layer 21. A lower wiring layer 24 provided on the lower surface of the organic insulating layer 21, an upper wiring layer 25 provided on the upper surface of the organic insulating layer 21, and a solder bump 26 provided on the lower surface of the lower wiring layer 24; Have.

  The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, a bonding wire 33 for electrically connecting the semiconductor chip 32 and the package substrate 31, a semiconductor chip 32 and a bonding wire. A sealing layer 34 in which 33 is embedded and solder bumps 35 provided on the lower surface of the package substrate 31 are provided.

  The semiconductor package 3 is stacked on the through electrode substrate 2. Thus, the solder bumps 35 of the semiconductor package 3 and the upper wiring layer 25 of the through electrode substrate 2 are electrically connected.

  In such a semiconductor device 1, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, the height can be easily reduced. For this reason, it can contribute also to size reduction of the electronic device which incorporates the semiconductor device 1.

  In addition, since the through electrode substrate 2 and the semiconductor package 3 having semiconductor chips different from each other are stacked, the mounting density per unit area can be increased. Therefore, it is possible to achieve both size reduction and high performance.

Hereinafter, the through electrode substrate 2 and the semiconductor package 3 will be described in more detail.
Lower layer wiring layer 24 and upper layer wiring layer 25 provided in through electrode substrate 2 shown in FIG. 2 each include an insulating layer, a wiring layer, a through wiring, and the like. Thereby, the lower interconnection layer 24 and the upper interconnection layer 25 include interconnections inside and on the surface, and mutual electrical connection is achieved through the through interconnection 221 penetrating the organic insulating layer 21.

  Among these, the wiring layer included in the lower layer wiring layer 24 is connected to the semiconductor chip 23 and the solder bump 26. Thus, the lower wiring layer 24 functions as a rewiring layer of the semiconductor chip 23, and the solder bumps 26 function as external terminals of the semiconductor chip 23.

  Further, as described above, the through wiring 221 shown in FIG. 2 is provided to penetrate the organic insulating layer 21. As a result, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through electrode substrate 2 and the semiconductor package 3 can be stacked. Therefore, the semiconductor device 1 can be highly functional. it can.

  Furthermore, the wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 and the solder bump 35. Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23 and functions as a rewiring layer of the semiconductor chip 23 and as an interposer interposed between the semiconductor chip 23 and the package substrate 31. Also works.

  In addition, the penetrating wiring 221 penetrates the organic insulating layer 21, whereby the effect of reinforcing the organic insulating layer 21 can be obtained. Therefore, even when the mechanical strength of the lower wiring layer 24 and the upper wiring layer 25 is low, it is possible to avoid the reduction in the mechanical strength of the entire through electrode substrate 2. As a result, the thickness of the lower wiring layer 24 and the upper wiring layer 25 can be further reduced, and the height of the semiconductor device 1 can be further reduced.

  The semiconductor device 1 shown in FIG. 1 also includes, in addition to the through wiring 221, a through wiring 222 provided so as to penetrate the organic insulating layer 21 located on the upper surface of the semiconductor chip 23. Thereby, the electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.

  Furthermore, the organic insulating layer 21 is provided to cover the semiconductor chip 23. Thereby, the effect of protecting the semiconductor chip 23 is enhanced. As a result, the reliability of the semiconductor device 1 can be improved. Moreover, the semiconductor device 1 which can be easily applied to the mounting method like the package on package structure which concerns on this embodiment is obtained.

  The diameter W (see FIG. 2) of the through wiring 221 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. Thereby, the conductivity of the through wiring 221 can be secured without impairing the mechanical properties of the organic insulating layer 21.

  The semiconductor package 3 shown in FIG. 1 may be any type of package. For example, Quad Flat Package (QFP), Small Outline Package (SOP), Ball Grid Array (BGA), Chip Size Package (CSP), Quad Flat Non-Leaded Package (QFN), Small Outline Non-leaded Package (SON), The form of LF-BGA (Lead Flame BGA) etc. is mentioned.

  The arrangement of the semiconductor chips 32 is not particularly limited, but as an example in FIG. 1, a plurality of semiconductor chips 32 are stacked. Thereby, the mounting density is increased. The plurality of semiconductor chips 32 may be juxtaposed in the planar direction, or may be juxtaposed in the planar direction while being stacked in the thickness direction.

  The package substrate 31 may be any substrate, and is, for example, a substrate including an insulating layer, a wiring layer, a through wiring, and the like (not shown). Among these, the solder bump 35 and the bonding wire 33 can be electrically connected through the through wiring.

  The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wire 33 can be protected from external force and the external environment.

  In addition, since the semiconductor chip 23 included in the through electrode substrate 2 and the semiconductor chip 32 included in the semiconductor package 3 are disposed in proximity to each other, it is possible to enjoy advantages such as speeding up and reduction in mutual communication. Can. From this point of view, for example, one of the semiconductor chip 23 and the semiconductor chip 32 is an arithmetic element such as a central processing unit (CPU), a graphics processing unit (GPU), or an application processor (AP), and the other is a dynamic random access (DRAM) In the case of a storage element or the like such as a memory or a flash memory, these elements can be arranged close to each other in the same device. As a result, it is possible to realize the semiconductor device 1 in which high functionalization and miniaturization are compatible.

<Method of Manufacturing Semiconductor Device>
Next, a method of manufacturing the semiconductor device 1 shown in FIG. 1 (a method of manufacturing the semiconductor device according to the embodiment) will be described. In addition, the patterning method according to the embodiment will also be described.

  FIG. 3 is a process diagram showing a method of manufacturing the semiconductor device 1 shown in FIG. 4-8 is a figure for demonstrating the method to manufacture the semiconductor device 1 shown in FIG. 1, respectively.

  The method of manufacturing the semiconductor device 1 according to the present embodiment includes the patterning method according to the present embodiment.

  Specifically, the method of manufacturing the semiconductor device 1 includes a chip arrangement step S1 of arranging the semiconductor chip 23 on the substrate 202, and a through hole formed by the patterning method according to the present embodiment so as to embed the semiconductor chip 23. And a film patterning step S2 of obtaining the organic insulating layer 21 (resin film).

  Among them, in the film patterning step S2, a photosensitive resin film 20 (film-like photosensitive resin composition) is disposed on the semiconductor chip 23 (on the base), and a first resin layer arranging step is performed to obtain the photosensitive resin layer 210. S21, and after the first resin layer disposing step S21, the photosensitive resin layer 210 is subjected to a pre-exposure heating process S22 and after the first pre-exposure heating step S22, the photosensitive resin layer 210 is subjected to After the first exposure process S23 for performing the exposure process and the first exposure process S23, the first after-exposure heating process S24 for performing the post-exposure heating process for heating the photosensitive resin layer 210 at 50 to 90 ° C., and the first exposure A patterning method comprising: a first developing step S25 for developing the photosensitive resin layer 210 after the post-heating step S24; and a first through wiring forming step S26 for forming the through wiring 221, 222 (conductive portion) Containing (embodiment of patterning method of the present invention).

  In addition to the above steps, the method of manufacturing the semiconductor device 1 further includes an upper wiring layer forming step S3 for forming the upper wiring layer 25, a substrate peeling step S4 for peeling the substrate 202, and a lower layer for forming the lower wiring layer 24. A wiring layer forming step S5, a solder bump forming step S6 for forming the solder bumps 26, and a laminating step S7 for laminating the semiconductor package 3 on the through electrode substrate 2 are included.

  Among them, in the upper wiring layer forming step S3, the photosensitive resin varnish 5 (a varnish-like photosensitive resin composition) is disposed on the peeling surface of the substrate 202, and a second resin layer disposition is obtained to obtain photosensitive resin layers 2510 and 2520. Step S31, and after the second resin layer disposing step S31, the second pre-exposure heating step S32 of subjecting the photosensitive resin layers 2510 and 2520 to a pre-exposure heating treatment, and after the second pre-exposure heating step S32, the photosensitive resin After the second exposure step S33 of exposing the layers 2510 and 2520 and the second exposure step S33, a second exposure step of heating the photosensitive resin layers 2510 and 2520 at 50 to 90 ° C. is performed. Step S34, a second developing step S35 for developing the photosensitive resin layers 2510 and 2520 after the second post-exposure heating step S34, a wiring layer forming step S36 for forming the wiring layer 253, and the through wiring 2 4 includes a patterning method having a second through-wiring forming step S37, the forming the (conductive portion) (the embodiment of the patterning method of the present invention).

  The respective steps will be sequentially described below. The following description is an example of the embodiment of the method for manufacturing a semiconductor device of the present invention, and only one of the film patterning step S2 and the upper wiring layer forming step S3 may include the above patterning method. Moreover, not the said process but the process other than that, for example, lower-layer wiring layer formation process S5 may include the said patterning method.

[1] Chip placement step S1
First, as shown in FIG. 4A, a substrate 202 is prepared.

  The constituent material of the substrate 202 is not particularly limited, and examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials and the like. Further, as the substrate 202, a semiconductor wafer such as a silicon wafer, a glass wafer, or the like may be used.

  Next, as shown in FIG. 4B, the semiconductor chip 23 is disposed on the substrate 202. In this manufacturing method, as an example, a plurality of semiconductor chips 23 are provided on the same substrate 202 while being separated from each other. The plurality of semiconductor chips 23 may be of the same type as each other or may be of different types. Alternatively, the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

  Note that, if necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23. The interposer functions as, for example, a rewiring layer of the semiconductor chip 23. Therefore, the interposer may be provided with a pad (not shown) for electrically connecting with the electrode of the semiconductor chip 23 described later. Thereby, the pad spacing and the arrangement pattern of the semiconductor chip 23 can be converted, and the design freedom of the semiconductor device 1 can be further enhanced.

  For example, a silicon substrate, a ceramic substrate, an inorganic substrate such as a glass substrate, an organic substrate such as a resin substrate, or the like is used for such an interposer.

[2] film patterning step S2
Next, a film patterning step of forming the organic insulating layer 21 (resin film) provided so as to embed the semiconductor chip 23 will be described.

[2-1] 1st resin layer arrangement process S21
First, as shown in FIG. 4C, the photosensitive resin film 20 is disposed on the semiconductor chip 23. The photosensitive resin film 20 is a resin film having heat melting property and photosensitivity, which will be described in detail later.

  Next, the photosensitive resin film 20 is heated while being pressed downward. Thus, the photosensitive resin film 20 can be disposed so as to bury the semiconductor chip 23 as shown in FIG. 4D while melting the photosensitive resin film 20. As a result, as shown in FIG. 5E, the photosensitive resin layer 210 in which the semiconductor chip 23 is embedded is obtained.

  When the photosensitive resin film 20 is disposed on the semiconductor chip 23, the photosensitive resin film 20 may be disposed alone, and the photosensitive resin film 20 laminated on the carrier film is pressed to the semiconductor chip 23. You may make it arrange | position so that it may be applied.

  In addition, a known laminating method may be used in this operation. In that case, for example, a vacuum laminator is used. The vacuum laminator may be a batch type or a continuous type. Specifically, using a heat plate which can be pressed with a predetermined pressure and heated to a predetermined temperature in the vacuum chamber, the photosensitive resin film 20 is applied to the adherend placed on the table. A method of pressing is used.

  Although the heating temperature at this time is suitably set according to the constituent material etc. of the photosensitive resin film 20, it is preferable that it is 40-150 degreeC as an example, and it is more preferable that it is 50-140 degreeC, and 60- More preferably, the temperature is 130 ° C. By heating at such a temperature, the embeddability of the semiconductor chip 23 in the photosensitive resin film 20 is improved, and the curing reaction of the photosensitive resin film 20 proceeds with the excessive heating, or in the process described later. It can suppress that the processability of the photosensitive resin film 20 falls.

  Moreover, although heating time is suitably set according to heating temperature, it is preferable that it is 10 to 100 second as an example.

  The pressure is not particularly limited, but is preferably 0.2 to 5 MPa, and more preferably 0.4 to 1 MPa.

  In addition, when arranging the photosensitive resin composition so that the semiconductor chip 23 may be embedded, it is easy to thicken the photosensitive resin layer 210 by using the photosensitive resin film 20 formed by converting the photosensitive resin composition into a film. It will be This enables the formation of the photosensitive resin layer 210 that can be easily embedded even in the semiconductor chip 23 having a large thickness. In addition, even in the case of achieving a thick film, an advantage is that it is easy to make the thickness of the photosensitive resin layer 210 uniform.

  In addition, in the laminating method, since the photosensitive resin film 20 is pressed by the heat plate, the contact surface of the heat plate can be easily flattened. For this reason, in the photosensitive resin layer 210, planarization of the upper surface is better. Therefore, when the upper wiring layer 25 is further laminated on the upper surface of the photosensitive resin layer 210, many advantages can be obtained in terms of good workability, high precision of lamination position, and the like.

  In addition, although the photosensitive resin film 20 is manufactured by film-forming the varnish-like photosensitive resin composition, specifically, the photosensitive resin composition whose viscosity is adjusted with a solvent etc. Apply on the ground. Then, the photosensitive resin film 20 is obtained by drying the obtained coating film.

  As such a method, for example, a method of coating a varnish-like photosensitive resin composition on a carrier film using various coaters and drying the same, a varnish-like photosensitive resin using a spray device After spraying a composition on a carrier film, the method of drying this, etc. are mentioned. Among these, after applying a varnish-like photosensitive resin composition on a carrier film using various coater apparatuses, such as a bar coater, a die coater, a lip coater, the method of drying this is preferable. Thereby, the photosensitive resin film 20 which does not have a void and has the thickness of a uniform photosensitive resin layer can be manufactured efficiently.

  Although the content rate of the solvent in the photosensitive resin film 20 is not specifically limited, It is preferable that it is 10 mass% or less of the photosensitive resin film 20 whole. Thus, the tackiness of the photosensitive resin film 20 can be improved, and the curability of the photosensitive resin film 20 can be enhanced. In addition, the generation of voids due to the volatilization of the solvent can be suppressed.

  The drying conditions include, for example, heating at a temperature of 80 to 150 ° C. for 5 to 30 minutes.

  In addition, the photosensitive resin film 20 laminated | stacked on the carrier film is useful from a viewpoint of handleability, surface cleanability, etc. At this time, the carrier film may be in the form of a roll that can be wound, or may be in the form of a sheet.

  As a constituent material of a carrier film, a resin material, a metal material, etc. are mentioned, for example. Among these, as the resin material, for example, polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonates, silicones, fluorine resins, polyimide resins and the like can be mentioned. Moreover, as a metal material, copper or copper alloy, aluminum or aluminum alloy, iron or iron alloy etc. are mentioned, for example.

  Among these, a carrier film containing polyethylene terephthalate which is a kind of polyester is preferably used. Such a carrier film has relatively good peelability while suitably supporting the photosensitive resin film 20.

  Moreover, on the surface of the photosensitive resin film 20, a cover film may be provided as needed. The cover film protects the surface of the photosensitive resin film 20 until the bonding operation.

  The constituent material of the cover film is appropriately selected from those listed as constituent materials of the carrier film, but a cover film containing polyethylene terephthalate, which is a type of polyester, is preferably used from the viewpoints of protection and releasability.

  In the above description, although the example using the photosensitive resin film 20 (film-like photosensitive resin composition) is described, it may be varnish-like instead of or in combination with this. The photosensitive resin composition of the present invention may be used. According to the varnish-like photosensitive resin composition, it is possible to form a thinner photosensitive resin layer 210 as compared with the case where the photosensitive resin film 20 is used, and at the same time, it is possible to form voids due to air entrapment during film formation. There is an advantage that the occurrence can be easily suppressed. Further, by using the photosensitive resin film 20 and the varnish-like photosensitive resin composition in combination, the thick photosensitive resin layer 210 can be easily formed, and the generation of voids can be suppressed. So-called synergetic effects can be obtained.

  The film thickness of the photosensitive resin film 20 (film thickness of the photosensitive resin layer 210) is appropriately set according to the film thickness after curing (height H in FIG. 2) and in consideration of curing shrinkage, while the semiconductor The thickness is not particularly limited as long as the chip 23 can be embedded, but as an example, it is preferably about 100 to 1000 μm, more preferably about 120 to 750 μm, and still more preferably about 140 to 500 μm. By setting the film thickness of the photosensitive resin film 20 within the above range, a relatively thick semiconductor chip 23 can be easily embedded, and sufficient mechanical strength to the cured film of the photosensitive resin film 20 Can also be granted. As a result, it is possible to form a cured film that contributes to the rigidity of the semiconductor device 1 as well as the good protection of the semiconductor chip 23.

  Here, as the photosensitive resin composition contained in the photosensitive resin film 20, one having the following characteristics is used.

  That is, this photosensitive resin composition has a characteristic that the melt viscosity is 5 Pa · s or less when measured under the measurement conditions of a temperature increase rate of 5 ° C./min, a frequency of 0.1 Hz and a heating temperature of 30 to 150 ° C. And preferably has a characteristic of 4 Pa · s or less, more preferably 3 Pa · s or less. For example, when the photosensitive resin film 20 is melted while heating the photosensitive resin film 20 while pressing the photosensitive resin film 20 downward, the photosensitive resin composition having such characteristics has a stress locally in the inside of the photosensitive resin film 20. Act to make it difficult to concentrate. That is, since it can laminate smoothly, the residual stress in the photosensitive resin layer 210 after lamination can be restrained small.

  Such residual stress may cause an unintended deformation when released in a developing process described later, which may result in a decrease in patterning accuracy, that is, a generation of a reverse taper shape. Therefore, by suppressing the residual stress to a minimum, it is possible to finally realize high patterning accuracy, that is, suppression of the occurrence of the reverse tapered shape.

  On the other hand, the lower limit value of the melt viscosity of the photosensitive resin composition is not particularly limited, but it is easy to maintain the shape even if it is melted (do not flow out), or to easily secure a sufficient film thickness If so, it may be set to 0.2 Pa · s or more.

The melt viscosity of the photosensitive resin composition is measured as follows.
First, a photosensitive resin film having a thickness of 150 μm is prepared.

  Next, using a visco-elasticity measuring apparatus ("MARS" manufactured by Thermo Fisher Scientific Co., Ltd.), parallel plate 20 mmφ, gap 0.05 mm, heating rate 5 ° C./min, frequency 0.1 Hz, temperature 30 to 150 ° C. Under the measurement conditions, the melt viscosity curve (the change curve of the melt viscosity with respect to temperature) of the photosensitive resin film is obtained.

  Then, the lowest viscosity in the obtained melt viscosity curve is taken as the melt viscosity of the photosensitive resin composition.

Moreover, in FIG. 9, an example of the melt viscosity curve of the photosensitive resin composition is shown.
The melt viscosity curve shown in FIG. 9 is a curve in which the viscosity decreases with increasing temperature.

  In such a melt viscosity curve, when the slope of the curve at 50 ° C. (ratio of change in viscosity to temperature) is determined, it is preferably −500 to −10 [(Pa · s) / ° C.], −300 to It is more preferably -30 [(Pa · s) / ° C], and even more preferably -150 to -50 [(Pa · s) / ° C]. By setting the slope of the curve within the above range, the embeddability of the semiconductor chip 23 into the photosensitive resin film 20 is further improved, and air entrapment is less likely to occur. That is, by optimizing the reduction rate of the melt viscosity, it is possible to balance the speed at which the photosensitive resin film 20 enters the gap between the semiconductor chips 23 and the speed at which the entrapped air is discharged. The photosensitive resin film 20 in which the semiconductor chip 23 is embedded in a state where there are few voids is obtained. In addition, the residual stress in the photosensitive resin layer 210 can be further reduced.

When the slope of the curve at 50 ° C. is determined, the viscosity μ 48 at 48 ° C. and the viscosity μ 52 at 52 ° C. may be simply determined, and the rate of change of viscosity in the section may be determined by the following equation.
Curve slope = (μ 52-μ 48) / (52-48)

  The melt viscosity of the photosensitive resin composition can be adjusted by the raw material of the photosensitive resin film 20. For example, the melt viscosity can be reduced by adding more liquid resin at normal temperature.

[2-2] First Pre-exposure Heating Step S22
Next, if necessary, the photosensitive resin layer 210 is subjected to a pre-exposure heat treatment. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 210 can be stabilized, and the reaction in the first exposure step S23 described later can be stabilized, while the heating conditions as described later By heating with the above, the adverse effect of the heating on the photoacid generator can be minimized.

  The temperature of the pre-exposure heat treatment is preferably 70 to 100 ° C., more preferably 75 to 95 ° C., and still more preferably 75 to 90 ° C. If the temperature of the pre-exposure heat treatment is below the lower limit value, the purpose of the stabilization of molecules by the pre-exposure heat treatment may not be achieved. On the other hand, when the temperature of the pre-exposure heat treatment exceeds the upper limit value, the photoacid generator is activated too much, and the acid is less likely to be generated even when light is irradiated in the first exposure step S23 described later. There is a risk of becoming apparent. Such an influence causes, for example, in the case of the negative photosensitive resin layer 210, a problem of causing an unintended dissolution in a developer in the exposed area. As a result, in the first developing step S25 described later, the processing accuracy of the patterning is reduced.

  Further, the time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment, but preferably 1 to 10 minutes, more preferably 2 to 8 minutes at the temperature. 3 to 6 minutes. If the time of the pre-exposure heat treatment is below the lower limit value, the heating time is insufficient, so that the purpose of the stabilization of the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the pre-exposure heat treatment time exceeds the upper limit value, the heating time is too long, so even if the pre-exposure heat treatment temperature falls within the above range, the action of the photoacid generator is inhibited. There is a risk of

  Further, the atmosphere of the heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is in the air in consideration of work efficiency and the like.

  Further, the atmospheric pressure is not particularly limited, and may be under reduced pressure or under pressure, but it is normal pressure in consideration of work efficiency and the like. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

  In addition, when the photosensitive resin film 20 laminated on the carrier film is disposed so as to be pressed against the semiconductor chip 23, the process of peeling the carrier film from the photosensitive resin film 20 is included before the pre-exposure heat treatment. Is preferred. Thereby, the photosensitive resin film 20 can be protected by the carrier film just before the pre-exposure heat treatment. As a result, damage to the photosensitive resin film 20 and adhesion of foreign matter can be prevented, and the surface flatness can be further enhanced.

[2-3] 1st exposure process S23
Next, the photosensitive resin layer 210 is exposed.

  First, as shown in FIG. 5F, the mask 411 is disposed in a predetermined region on the photosensitive resin layer 210. Then, light (actinic radiation) is emitted through the mask 411. Thus, the photosensitive resin layer 210 is exposed according to the pattern of the mask 411.

  In addition, in FIG. 5, the case where the photosensitive resin layer 210 has what is called a negative photosensitive is shown in figure. In this example, in the photosensitive resin layer 210, the solubility in the developing solution is given to the area corresponding to the light shielding portion of the mask 411.

  On the other hand, in the region corresponding to the non-light shielding portion of the mask 411, a catalyst such as an acid is generated by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction between the thermosetting resin and the curing agent in the first post-exposure heating step S24 and the like described later.

Moreover, it is preferable that it is 100-2000 mJ / cm < ² >, and, as for the exposure amount in an exposure process, it is more preferable that it is 200-1000 mJ / cm < ² >. Thereby, underexposure and overexposure in the photosensitive resin layer 210 can be suppressed. As a result, it is possible to finally realize high patterning accuracy, that is, suppression of the occurrence of the reverse taper shape.

[2-4] First post-exposure heating step S24
Next, the photosensitive resin layer 210 is subjected to a post-exposure heat treatment.

  The temperature of the post-exposure heat treatment is 50 to 90 ° C., preferably 55 to 85 ° C., and more preferably 60 to 80 ° C. By performing heat treatment after exposure at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin and the curing agent can be sufficiently reacted in a short time. On the other hand, if the temperature is too high, the diffusion of the acid is promoted, and there is a possibility that the processing accuracy of patterning in the first developing step S25 described later may be reduced, but such concern can be reduced. In addition, since the temperature is lower than that of the prior art, the softening of the photosensitive resin layer 210 in the post-exposure heat treatment is suppressed. Also from this point of view, the diffusion distance of the acid can be suppressed.

  If the temperature of the post-exposure heat treatment is below the lower limit, the action of the catalyst such as acid can not be sufficiently enhanced, so that the reaction rate between the thermosetting resin and the curing agent may decrease or time may be required. There is a risk of On the other hand, when the temperature of the post-exposure heat treatment exceeds the upper limit, the diffusion of the acid is promoted, and the processing accuracy of the patterning in the first development step S25 may be lowered.

  On the other hand, although the time of post-exposure heat treatment is appropriately set according to the temperature of post-exposure heat treatment, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes at the above temperature. 3-15 minutes. By performing the post-exposure heat treatment in such a time, the thermosetting resin and the curing agent can be sufficiently reacted, and the diffusion of the acid is suppressed to suppress the decrease in the processing accuracy of the patterning. Can.

  Further, the atmosphere for the post-exposure heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is under the atmosphere in consideration of work efficiency and the like.

  Further, the atmospheric pressure of the post-exposure heat treatment is not particularly limited, and may be under reduced pressure or under pressure, but it is normal pressure in consideration of work efficiency and the like. Thus, the pre-exposure heat treatment can be performed relatively easily. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-5] First Development Step S25
Next, the photosensitive resin layer 210 is developed. Thus, the openings 421 and 422 penetrating the photosensitive resin layer 210 are formed in the region corresponding to the light shielding portion of the mask 411 (see FIG. 5G). The opening 421 is provided at a position on the photosensitive resin layer 210 where the semiconductor chip 23 is not present, and the opening 422 is provided at a position where the semiconductor chip 23 is present.
As a developing solution, an organic type developing solution, a water-soluble developing solution, etc. are mentioned, for example.

  After the development process, the photosensitive resin layer 210 is subjected to a post-development heat process. Although the conditions of the post-development heat treatment are not particularly limited, the heating temperature is about 160 to 250 ° C., and the heating time is about 30 to 120 minutes. Thereby, the photosensitive resin layer 210 can be cured and the organic insulating layer 21 can be obtained while suppressing the thermal influence on the semiconductor chip 23.

  Here, since the concentration of the acid generated in the first exposure step S23 mentioned above depends on the amount of light to be irradiated, it is considered to be higher as it is closer to the surface of the photosensitive resin layer 210. Therefore, when the acid having such concentration distribution is diffused, the cured region of the photosensitive resin layer 210 is also moved from the light irradiation region to the non-irradiation region accordingly. As a result, the shape after being patterned in this process may be different from the intended shape by the mask 411.

  FIG. 10 is a partial enlarged view of FIG. 5 (g), and FIG. 10 (a) is a view showing a state in which the inner surface of the opening 421 is reverse tapered, and FIG. 10 (b) is an opening It is a figure which shows the state which the inner surface of the part 421 becomes a forward taper shape.

  When the melt viscosity of the photosensitive resin composition falls below the lower limit or the temperature of the post-exposure heat treatment exceeds the upper limit, the residual stress or the diffusion of the acid causes the opening 421 to There is a high probability that the inner surface will have a so-called reverse taper shape. That is, as shown in FIG. 10A, as the surface of the photosensitive resin layer 210 is closer to the surface, a shape (reverse tapered shape) in which the inner surface of the opening 421 is shifted inward is more easily formed.

  If the inner surface of the opening 421 has a reverse tapered shape as shown in FIG. 10A, when forming a seed layer on the inner surface of the opening 421 in the first through wiring formation step S26 described later, it interferes with the film forming process. Will come. That is, with the unintentional inclination of the inner surface of the opening 421, a region where the seed layer can not be formed is generated, which causes a problem that the through wiring 221 can not be formed.

  On the other hand, when the melt viscosity of the photosensitive resin composition is in the above range and the temperature of the post-exposure heat treatment is in the above range, the probability that the inner surface of the opening 421 will be so-called forward tapered shape is high. Become. That is, as shown in FIG. 10B, as the surface is closer to the surface of the photosensitive resin layer 210, a shape (forward tapered shape) in which the inner surface of the opening 421 is shifted outward tends to be formed.

  When the inner surface of the opening 421 has a forward tapered shape as shown in FIG. 10B, when the seed layer is formed on the inner surface of the opening 421, it is difficult to generate a region where the seed layer can not be formed. . Thereby, the through wiring 221 can be formed more reliably. As a result, a highly reliable semiconductor device 1 can be obtained.

  When the inner surface of the opening 421 has a forward tapered shape, the angle between the side surface 421a and the upper surface of the substrate 202 is preferably 70 to 90 °, more preferably 80 to 90 °, 85 More preferably, it is -90 °. As a result, when the seed layer is formed on the inner surface of the opening 421, the material flying from above easily adheres to the side surface 421a. For this reason, it becomes difficult to generate the film-forming defect of a seed layer.

  When the angle between the side surface 421a and the upper surface of the substrate 202 is less than the lower limit value, the area occupied by the opening 421 becomes relatively large when the photosensitive resin layer 210 is viewed in plan. For this reason, there is a possibility that it may be difficult to increase the formation density of the openings 421. On the other hand, when the angle between the side surface 421a and the upper surface of the substrate 202 exceeds the upper limit value, it has a so-called reverse taper shape, which may affect formation of the seed layer, for example. There is.

  The angle between the side surface 421a and the upper surface of the substrate 202 refers to the inclination angle θ shown in FIG.

  Here, a virtual line L illustrated in FIG. 10 is a tangent of the side surface 421a at the midpoint C of the side surface 421a. The inclination angle θ refers to the size of the angle formed on the opposite side of the opening 421 among the angles formed between the imaginary line L and the upper surface of the substrate 202.

[2-6] First Through Wiring Forming Step S26
Next, the through wiring 221 shown in FIG. 5H is formed in the opening 421. In addition, the through wiring 222 shown in FIG. 5H is formed in the opening 422.

  A known method may be used to form the through wires 221 and 222. For example, the following method may be used.

  First, a seed layer (not shown) is formed on the organic insulating layer 21. The seed layer is formed on the top surface of the organic insulating layer 21 together with the inner surfaces (side and bottom surfaces) of the openings 421 and 422.

  As a seed layer, for example, a copper seed layer is used. Also, the seed layer is formed, for example, by sputtering.

  Also, the seed layer may be made of the same metal as the through wiring 221 and 222 to be formed, or may be made of different metal.

  Next, a resist layer (not shown) is formed on the region other than the openings 421 and 422 in the seed layer (not shown). Then, using the resist layer as a mask, the openings 421 and 422 are filled with metal. For example, electrolytic plating is used for this filling. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, and the like. Thus, the conductive material is embedded in the openings 421 and 422, and the through wires 221 and 222 are formed.

Then, the resist layer not shown is removed. Further, the seed layer (not shown) on the organic insulating layer 21 is removed. For this, for example, a flash etching method can be used.
In addition, the formation location of penetration wiring 221, 222 is not limited to the position of illustration.

[3] Upper Wiring Layer Forming Step S3
Next, the upper wiring layer 25 is formed on the upper surface side of the organic insulating layer 21. The upper wiring layer 25 is formed, for example, using a photolithography method and a plating method.

[3-1] Second resin layer disposing step S31
First, as shown in FIG. 6I, the photosensitive resin varnish 5 is applied (disposed) on the organic insulating layer 21. Thereby, as shown to FIG. 6 (j), the liquid film of the photosensitive resin varnish 5 is obtained. The photosensitive resin varnish 5, which will be described in detail later, is a varnish having heat melting property and photosensitivity.

  The application of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spray device, an inkjet device, or the like.

  The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is preferably 10 to 500 mPa · s, and more preferably 30 to 200 mPa · s. When the viscosity of the photosensitive resin varnish 5 is in the above range, a thinner photosensitive resin layer can be formed. As a result, the upper wiring layer 25 can be made thinner, and the semiconductor device 1 can be easily made thinner.

  The viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) under the conditions of a rotational speed of 20 rpm and a measuring time of 300 seconds.

  Next, the liquid film of the photosensitive resin varnish 5 is dried. Thereby, the photosensitive resin layer 2510 shown in FIG. 6 (k) is obtained.

  Although the drying conditions of the photosensitive resin varnish 5 are not particularly limited, for example, conditions of heating at a temperature of 80 to 150 ° C. for 5 to 30 minutes may be mentioned.

[3-2] Second pre-exposure heating step S32
Next, heat treatment before exposure is performed on the photosensitive resin layer 2510 as necessary. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 can be stabilized, and the reaction in the second exposure step S33 described later can be stabilized.

  The pre-exposure heat treatment in this step can be performed in the same manner as the pre-exposure heat treatment in the first pre-exposure heating step S22.

[3-3] Second Exposure Step S33
Next, the photosensitive resin layer 2510 is exposed.

  First, as shown in FIG. 6K, the mask 412 is disposed in a predetermined region on the photosensitive resin layer 2510. Then, light (actinic radiation) is emitted through the mask 412. Thus, the photosensitive resin layer 2510 is exposed according to the pattern of the mask 412.

  FIG. 6 (k) shows the case where the photosensitive resin layer 2510 has so-called negative type photosensitivity. In this example, in the photosensitive resin layer 2510, the solubility in the developing solution is given to the region corresponding to the light shielding portion of the mask 412.

[3-4] Second post-exposure heating step S34
Next, the photosensitive resin layer 2510 is subjected to a heat treatment after exposure.

  The temperature of the post-exposure heat treatment is 50 to 90 ° C., preferably 55 to 85 ° C., and more preferably 60 to 80 ° C. By performing heat treatment after exposure at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin and the curing agent can be sufficiently reacted in a short time. On the other hand, if the temperature is too high, the diffusion of the acid is promoted, and there is a possibility that the processing accuracy of patterning in the second developing step S35 described later may be reduced, but such concern can be reduced. In addition, since the temperature is lower than that of the prior art, the softening of the photosensitive resin layer 210 in the post-exposure heat treatment is suppressed. Also from this point of view, the diffusion distance of the acid can be suppressed.

  If the temperature of the post-exposure heat treatment is below the lower limit, the action of the catalyst such as acid can not be sufficiently enhanced, so that the reaction rate between the thermosetting resin and the curing agent may decrease or time may be required. There is a risk of On the other hand, when the temperature of the post-exposure heat treatment exceeds the upper limit, the diffusion of the acid is promoted, and the processing accuracy of the patterning in the second developing step S35 may be lowered.

  On the other hand, although the time of post-exposure heat treatment is appropriately set according to the temperature of post-exposure heat treatment, it is preferably 1 to 30 minutes, more preferably 2 to 20 minutes at the above temperature. 3-15 minutes. By performing the post-exposure heat treatment in such a time, the thermosetting resin and the curing agent can be sufficiently reacted, and the diffusion of the acid is suppressed to suppress the decrease in the processing accuracy of the patterning. Can.

  Further, the atmosphere for the post-exposure heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like, but it is under the atmosphere in consideration of work efficiency and the like.

  Further, the atmospheric pressure of the post-exposure heat treatment is not particularly limited, and may be under reduced pressure or under pressure, but it is normal pressure in consideration of work efficiency and the like. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[3-5] Second Development Step S35
Next, the photosensitive resin layer 2510 subjected to the exposure processing is subjected to a development processing. Thus, an opening 423 penetrating the photosensitive resin layer 2510 is formed in the region corresponding to the light shielding portion of the mask 412 (see FIG. 6 (L)).
As a developing solution, an organic type developing solution, a water-soluble developing solution, etc. are mentioned, for example.

  After the development process, the photosensitive resin layer 2510 is subjected to a post-development heat process. Although the conditions of the post-development heat treatment are not particularly limited, the heating temperature is about 160 to 250 ° C., and the heating time is about 30 to 120 minutes. Thereby, the photosensitive resin layer 2510 can be cured while suppressing the thermal influence on the semiconductor chip 23. As a result, an organic insulating layer 251 containing a cured product of the photosensitive resin composition is obtained.

  When the inner surface of the opening 423 has a forward tapered shape, the angle (tilt angle θ) between the side surface of the opening 423 and the upper surface of the semiconductor chip 23 is preferably 70 to 90 °, and 80 to 90 It is more preferable that it is °, and it is more preferable that it is 85 to 90 °. As a result, when the seed layer is formed on the inner surface of the opening 423, the raw material flying from above tends to adhere to the side surface. For this reason, it becomes difficult to generate the film-forming defect of a seed layer.

  When the inclination angle θ is less than the lower limit value, the area occupied by the opening 423 is relatively large when the photosensitive resin layer 210 is viewed in plan. Therefore, the formation density of the openings 423 may not be easily increased. On the other hand, when the inclination angle θ exceeds the upper limit value, the so-called reverse tapered shape is formed, which may cause trouble in formation of the seed layer, for example, and may cause formation failure of the through wiring 222.

  The angle between the side surface of the opening 423 and the upper surface of the semiconductor chip 23 is determined in the same manner as the angle between the side surface 421 a of the opening 421 and the upper surface of the substrate 202 described above.

[3-6] Wiring layer formation step S36
Next, the wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 7 (m)). The wiring layer 253 is formed, for example, by patterning using a photolithographic method after obtaining a metal layer using a vapor deposition method such as sputtering or vacuum evaporation.

  Next, in the same manner as in the second resin layer disposing step S31 described above, the photosensitive resin varnish 5 is applied on the organic insulating layer 251 so as to cover the wiring layer 253 to obtain a liquid film. Thereafter, the liquid film is dried to obtain a photosensitive resin layer 2520 shown in FIG. 7 (n).

  Thereafter, in the same manner as in the second pre-exposure heating step S32, the second exposure step S33, the second post-exposure heating step S34, and the second developing step S35, an opening communicating with the opening 423 is formed. As a result, as shown in FIG. 7 (o), an opening 424 penetrating the organic insulating layer 251 and the photosensitive resin layer 2520 is formed.

[3-7] Second Through Wiring Forming Step S37
Next, the through wiring 254 (conductive portion) shown in FIG.

Although a known method is used for forming the through wiring 254, for example, the same method as the method for forming the through wirings 221 and 222 described above is used.
In addition, the formation location of the penetration wiring 254 is not limited to the position of illustration.

[4] Substrate peeling process S4
Next, as shown in FIG. 8Q, the substrate 202 is peeled off. Thereby, the lower surface of the organic insulating layer 21 is exposed.

[5] Lower layer wiring layer forming step S5
Next, as shown in FIG. 8 (r), the lower wiring layer 24 is formed on the lower surface side of the organic insulating layer 21. The lower wiring layer 24 is formed using, for example, a photolithography method and a plating method, but may be formed in the same manner as the upper wiring layer forming step S3 described above. As a result, it is possible to receive the same effect as that described above, that is, the effect of suppressing deterioration in processing accuracy of patterning.

  The lower wiring layer 24 formed in this manner is electrically connected to the upper wiring layer 25 through the through wiring 221.

[6] Solder bump forming step S6
Next, as shown in FIG. 8 (s), solder bumps 26 are formed on the lower wiring layer 24. In addition, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.
As described above, the through electrode substrate 2 is obtained.

  The through electrode substrate 2 shown in FIG. 8 (s) can be divided into a plurality of regions. Therefore, it is possible to efficiently manufacture the plurality of through electrode substrates 2 by dividing the through electrode substrate 2 along the alternate long and short dash line shown in FIG. 8 (s), for example. In addition, a diamond cutter etc. can be used for individualization, for example.

[7] Stacking process S7
Next, the semiconductor package 3 is disposed on the singulated through electrode substrate 2. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

  Such a method of manufacturing the semiconductor device 1 can be applied to a wafer level process or a panel level process using a large area substrate.

  In addition, by using photosensitive resin layers 210, 2510 and 2520 made of a photosensitive resin composition, the arrangement of the semiconductor chip 23, the embedding of the semiconductor chip 23, the formation of the through wirings 221 and 222, and the upper wiring layer 25. The formation and the formation of the lower wiring layer 24 can be performed by a wafer level process or a panel level process. As a result, the manufacturing efficiency of the semiconductor device 1 can be enhanced and the cost can be reduced.

<Photosensitive resin composition>
Next, an example of the photosensitive resin composition used for the method of manufacturing the semiconductor device 1 will be described.

  The photosensitive resin composition is not particularly limited as long as it is a resin composition having photosensitivity and heat melting property, and includes, for example, a thermosetting resin, a curing agent, a photosensitive agent, and a coupling agent. .

(Thermosetting resin)
As the thermosetting resin, for example, phenol novolac epoxy resin, novolac epoxy resin such as cresol novolac epoxy resin, cresol naphthol epoxy resin, biphenyl epoxy resin, biphenyl aralkyl epoxy resin, phenoxy resin, naphthalene skeleton Epoxy resin, bisphenol A epoxy resin, bisphenol A diglycidyl ether epoxy resin, bisphenol F epoxy resin, bisphenol F diglycidyl ether epoxy resin, bisphenol S diglycidyl ether epoxy resin, glycidyl ether epoxy resin, cresol Novolak type epoxy resin, aromatic polyfunctional epoxy resin, aliphatic epoxy resin, aliphatic polyfunctional epoxy resin, alicyclic epoxy resin, polyfunctional Epoxy resins such as cyclic epoxy resins; resins having a triazine ring such as urea (urea) resins and melamine resins; unsaturated polyester resins; maleimide resins such as bismaleimide compounds; polyurethane resins; diallyl phthalate resins; silicone resins; Polyamide resin; Polyamide imide resin; Cyanate ester resin such as cyanate resin such as benzocyclobutene resin, novolac type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, tetramethyl bisphenol F type cyanate resin It can be mentioned. Moreover, in the thermosetting resin, one of these may be used alone, or two or more having different weight average molecular weights may be used in combination, and one or two or more of them may be used. You may use together with a polymer.

  Among them, as the thermosetting resin, those containing an epoxy resin are preferably used. Thereby, the photosensitive resin composition which can form the organic insulating layer 21, 251, 252 with a favorable mechanical characteristic is obtained.

Examples of the epoxy resin include polyfunctional epoxy resins in which two or more epoxy groups are contained in one molecule. These may be used alone or in combination of two or more. By using such a polyfunctional epoxy resin, the film physical properties and processability of the photosensitive resin layers 210, 2510 and 2520 can be enhanced.
Further, as the epoxy resin, a trifunctional or higher polyfunctional epoxy resin may be used.

  The thermosetting resin is, in particular, phenol novolac epoxy resin, cresol novolac epoxy resin, triphenylmethane epoxy resin, dicyclopentadiene epoxy resin, bisphenol A epoxy resin, and tetramethyl bisphenol F epoxy resin It is preferable to include one or more epoxy resins selected from the group consisting of, and more preferable to include novolac epoxy resins. Since such a thermosetting resin is an epoxy resin which is polyfunctional and is composed of an aromatic compound, the organic insulating layers 21 251 and 252 have good curability, high heat resistance, and relatively low thermal expansion coefficient. can get.

  The content of the thermosetting resin is not particularly limited, but is preferably about 40 to 80% by mass, and more preferably about 45 to 75% by mass, based on the total solid content of the photosensitive resin composition. It is more preferable that the amount is about 70% by mass. By setting the content of the thermosetting resin within the above range, the patterning properties of the photosensitive resin composition can be enhanced, and the heat resistance and mechanical strength of the organic insulating layers 21, 251, 252 can be sufficiently enhanced. it can.

  In addition, solid content of the photosensitive resin composition refers to the non volatile matter in the photosensitive resin composition, and refers to the remainder except volatile components, such as water and a solvent. Moreover, in the present embodiment, the content of the photosensitive resin composition with respect to the entire solid content refers to the content with respect to the entire solid content excluding the solvent in the photosensitive resin composition when the solvent is contained.

  In addition to the thermosetting resin, the photosensitive resin composition may contain a thermoplastic resin. Thereby, the moldability of the photosensitive resin composition can be further enhanced.

  Examples of the thermoplastic resin include acrylic resins, polyamide resins (eg, nylon etc.), thermoplastic urethane resins, polyolefin resins (eg polyethylene, polypropylene etc.), polycarbonate, polyester resins (eg polyethylene terephthalate, polybutylene) Terephthalate etc.), polyacetal, polyphenylene sulfide, polyetheretherketone, liquid crystal polymer, fluorocarbon resin (eg polytetrafluoroethylene, polyvinylidene fluoride etc.), modified polyphenylene ether, polysulfone, polyether sulfone, polyarylate, polyamide imide, poly Ether imide, thermoplastic polyimide, etc. are mentioned. In the photosensitive resin composition, one of these may be used alone, or two or more having different weight average molecular weights may be used in combination, and one or more of them may be used. You may use together with a prepolymer.

  The thermosetting resin preferably contains a solid resin at normal temperature (25 ° C.), and more preferably contains both a resin that is solid at normal temperature and a resin that is liquid at normal temperature (such as liquid epoxy resin described later) . The photosensitive resin composition containing such a thermosetting resin is a cured product that has good embeddability of the semiconductor chip 23 etc. in the photosensitive resin film 20, improvement in tack (stickiness) of the photosensitive resin film 20, and the like. The mechanical strength of certain organic insulating layers 21, 251, 252 can be compatible. As a result, highly reliable organic insulating layers 21, 251, 252 are obtained.

(Liquid epoxy resin)
The photosensitive resin composition may contain, as necessary, a liquid epoxy resin which is liquid at normal temperature. Since the liquid epoxy resin functions as a film forming aid (film forming agent), the brittleness of the organic insulating layers 21, 251, 252 can be suppressed.

  As a liquid epoxy resin, what is different from the thermosetting resin mentioned above can be used. Specifically, an epoxy compound which has two or more epoxy groups in the molecule and which is liquid at room temperature 25 ° C. can be used. By using such a liquid epoxy resin, the brittleness of the organic insulating layers 21, 251, 252 can be particularly suppressed. The viscosity of this liquid epoxy resin at 25 ° C. is, for example, 1 to 8000 mPa · s, preferably 5 to 1,500 mPa · s, and more preferably 10 to 1,400 mPa · s.

  As such a liquid epoxy resin, for example, one or more selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyl diglycidyl ether and alicyclic epoxy may be mentioned, It is used 1 type or in combination of 2 or more types. Among these, alkyl diglycidyl ether is preferably used from the viewpoint of reducing cracks after development.

  The epoxy equivalent of the liquid epoxy resin is preferably 100 to 200 g / eq, more preferably 105 to 180 g / eq, and still more preferably 110 to 170 g / eq. Thereby, the brittleness of the organic insulating layers 21, 251, 252 can be particularly suppressed.

  The content of the liquid epoxy resin is not particularly limited, but is preferably about 5 to 40% by mass, and more preferably about 10 to 35% by mass, based on the total solid content of the photosensitive resin composition. More preferably, it is about 30% by mass. Thereby, the physical property can be balanced while suppressing the brittleness of the organic insulating layers 21, 251, 252.

  The amount of liquid epoxy resin is preferably about 5 to 150 parts by mass, more preferably about 10 to 100 parts by mass, and more preferably 15 to 80 parts by mass with respect to 100 parts by mass of the solid resin at normal temperature. More preferably, When the ratio of the liquid resin is below the lower limit value, the embedding property of the semiconductor chip 23 in the photosensitive resin film 20 may be reduced, or the stability of the photosensitive resin film 20 may be reduced. On the other hand, when the ratio of liquid resin exceeds the above upper limit, there is a possibility that the tack of the photosensitive resin film 20 may be deteriorated or the mechanical strength of the organic insulating layer 21, 251, 252 which is a cured product may be reduced. is there.

(Hardening agent)
The photosensitive resin composition may contain a curing agent. Thereby, film physical properties and processability of the organic insulating layers 21, 251, 252 can be enhanced.

  The curing agent is not particularly limited as long as it accelerates the polymerization reaction of the thermosetting resin. For example, when the thermosetting resin contains an epoxy resin, a curing agent having a phenolic hydroxyl group is used. Specifically, a phenol resin can be used, and preferably, a polyfunctional phenol resin having two or more phenolic hydroxyl groups in the molecule can be used. Thereby, the coefficient of thermal expansion of the hardened | cured material of the photosensitive resin composition can be restrained.

  As a phenol resin, a novolak-type phenol resin, a resol-type phenol resin, a trisphenylmethane-type phenol resin, an aryl alkylene type phenol resin etc. are mentioned, for example. Among these, novolac type phenol resins are particularly preferably used. Thereby, photosensitive resin layers 210, 2510, 2520 having good curability and good development characteristics can be obtained.

  The addition amount of the curing agent is not particularly limited, but is preferably 25 parts by mass or more and 100 parts by mass or less, more preferably 30 parts by mass or more and 90 parts by mass or less, with respect to 100 parts by mass of the resin More preferably, it is from 80 parts by weight to 80 parts by weight. By setting the amount of addition of the curing agent within the above range, organic insulating layers 21 251 and 252 having high heat resistance and relatively low thermal expansion coefficient can be obtained.

(Photosensitizer)
As a photosensitizer, a photo-acid generator can be used, for example. As a result, a chemically amplified photosensitive resin composition using an acid generated from the photoacid generator as a catalyst can be obtained. Such a chemically amplified photosensitive resin composition has high sensitivity, and therefore, finer patterning can be realized at high throughput.

  As a photo-acid generator, what generate | occur | produces an acid by irradiation of active rays, such as an ultraviolet-ray, is mentioned, Specifically, an onium salt compound is mentioned. More specifically, iodonium salts such as diazonium salts and diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylbirylium salts, benzyl pyridinium thiocyanate, dialkyl phenacyl sulfonium salts, dialkyl hydroxyphenyl phosphonium salts, etc. Cationic photopolymerization initiators and the like.

  The photosensitizer is preferably one that does not generate hydrogen fluoride due to decomposition, such as methide salt type and borate salt type, in consideration of contact of the photosensitive resin composition with metal.

  The addition amount of the photosensitizer is not particularly limited, but is preferably about 0.3 to 5% by mass, and about 0.5 to 4.5% by mass of the total solid content of the photosensitive resin composition. It is more preferable that it is about 1 to 4% by mass. By setting the addition amount of the photosensitizer within the above range, the patterning properties of the photosensitive resin layers 210, 2510 and 2520 can be enhanced, and the long-term storage properties of the photosensitive resin composition can be enhanced.

  The photosensitizer may be one which imparts negative photosensitivity to the photosensitive resin composition, or may be one which imparts positive photosensitivity, but an opening with a high aspect ratio. In view of the point that it can be formed with high accuracy, etc., it is preferable to be negative.

(Coupling agent)
The photosensitive resin composition having a coupling agent enables formation of a resin film having good adhesion to the inorganic material. As a result, for example, the organic insulating layers 21, 251, 252 having excellent adhesion to the through wires 221, 222, 254 or the semiconductor chip 23 can be obtained.

  As a coupling agent, a coupling agent containing an amino group, an epoxy group, an acryl group, a methacryl group, a mercapto group, a vinyl group, a ureido group, a sulfide group, an acid anhydride etc. as a functional group is mentioned. These may be used alone or in combination of two or more.

  As the amino group-containing coupling agent, for example, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane , Γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropyl Examples include methyl dimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane and the like.

  As the epoxy group-containing coupling agent, for example, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidyl propyl Trimethoxysilane etc. are mentioned.

  Examples of the acrylic group-containing coupling agent include γ- (methacryloxypropyl) trimethoxysilane, γ- (methacryloxypropyl) methyldimethoxysilane, and γ- (methacryloxypropyl) methyldiethoxysilane.

  As a mercapto group containing coupling agent, 3-mercapto propyl trimethoxysilane etc. are mentioned, for example.

  Examples of the vinyl group-containing coupling agent include vinyl tris (β-methoxyethoxy) silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.

  As a ureido group containing coupling agent, 3-ureido propyl triethoxysilane etc. are mentioned, for example.

  Examples of sulfide group-containing coupling agents include bis (3- (triethoxysilyl) propyl) disulfide, bis (3- (triethoxysilyl) propyl) tetrasulfide and the like.

  In addition, a coupling agent containing an acid anhydride as a functional group is preferably used. The coupling agent containing an acid anhydride as a functional group (hereinafter referred to as “an acid anhydride-containing coupling agent”) is a cation (a metal cation) as the acid anhydride which is a functional group dissolves the inorganic oxide. Coordinate bond).

  On the other hand, the alkoxy group contained in the acid anhydride-containing coupling agent is hydrolyzed to become, for example, silanol. The silanol hydrogen bonds with the surface hydroxyl group of the inorganic material.

  Based on these bonding mechanisms, a photosensitive resin composition having good adhesion to inorganic materials can be obtained.

  As the acid anhydride-containing coupling agent, particularly, alkoxysilylalkylcarboxylic acid anhydride is preferably used. According to such a coupling agent, a photosensitive resin composition having better adhesion to the inorganic material, good sensitivity, and excellent patternability can be obtained.

  Specific examples of alkoxysilylalkylcarboxylic acid anhydrides include 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylsilylsuccinic anhydride, 3-dimethylmethoxysilylpropylsuccinic anhydride, 3-dimethyl Succinic anhydride such as ethoxysilyl propyl succinic anhydride, 3-trimethoxysilyl propyl cyclohexyl dicarboxylic acid anhydride, 3-triethoxy silyl propyl cyclohexyl dicarboxylic acid anhydride, 3-dimethyl methoxy silyl propyl cyclohexyl dicarboxylic acid anhydride Dicarboxylic acid anhydrides such as 3-dimethylethoxysilylpropylcyclohexyl dicarboxylic acid anhydride, 3-trimethoxysilylpropylphthalic anhydride, 3-triethoxysilylpropylphthalic anhydride, 3-dimethyenic anhydride Methoxysilylpropyl phthalic anhydride, phthalic acid anhydride, such as 3-dimethyl-ethoxysilylpropyl phthalic anhydride, and the like. These may be used alone or in combination of two or more.

  Among these, succinic anhydride is preferably used, and in particular, 3-trimethoxysilylpropyl succinic anhydride is more preferably used. According to such a coupling agent, the molecular length and the molecular structure are optimized, and thus the adhesion and the patterning property described above become better.

  In addition, although the silane coupling agent was listed here, a titanium coupling agent, a zirconium coupling agent, etc. may be sufficient.

  The addition amount of the coupling agent is not particularly limited, but is preferably about 0.3 to 5% by mass, and about 0.5 to 4.5% by mass of the total solid content of the photosensitive resin composition. Is more preferable, and about 1 to 4% by mass is more preferable. By setting the addition amount of the coupling agent in the above range, the organic insulating layer 21, 251, 252 having particularly good adhesion to the inorganic material such as the through wiring 221, 222, 254 or the semiconductor chip 23 is obtained. Be This contributes to the realization of the semiconductor device 1 with high reliability, such as maintaining the insulation properties of the organic insulating layers 21, 251, 252 for a long period of time.

  In addition, when the addition amount of a coupling agent is less than the said lower limit, there exists a possibility that the adhesiveness with respect to an inorganic material may fall depending on a composition etc. of a coupling agent. On the other hand, when the addition amount of the coupling agent exceeds the above upper limit value, depending on the composition of the coupling agent, etc., the photosensitivity and mechanical properties of the photosensitive resin composition may be deteriorated.

(Other additives)
Other additives may be added to the photosensitive resin composition as required. Examples of other additives include antioxidants, fillers such as silica, surfactants, sensitizers, and film-forming agents.

  Examples of the surfactant include fluorine-based surfactants, silicon-based surfactants, alkyl-based surfactants, and acrylic-based surfactants.

(solvent)
The photosensitive resin composition may contain a solvent. Any solvent can be used without particular limitation as long as it can dissolve the components of the photosensitive resin composition and does not react with the components.

  Examples of the solvent include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol And propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, butyl acetate and the like. These may be used alone or in combination of two or more.

  Although the present invention has been described above based on the illustrated embodiments, the present invention is not limited to these.

  For example, the patterning method and the method of manufacturing a semiconductor device of the present invention may be obtained by adding a process for an arbitrary purpose to the embodiment.

  In addition to the organic insulating layer as in the embodiment, the photosensitive resin composition is also applicable to a buffer coat for semiconductor, a rewiring layer, an α-ray preventing film, an interlayer insulating film, and the like. Since all of these are used as a permanent film, high mechanical properties possessed by the cured product of the photosensitive resin composition act effectively.

Next, specific examples of the present invention will be described.
1. Preparation of test piece (Example 1)
First, the raw materials shown in Tables 1 and 2 were dissolved in benzyl alcohol to prepare a solution.

  Next, the prepared solution was filtered with a polypropylene filter having a pore size of 0.2 μm to obtain a varnish-like photosensitive resin composition. The photosensitive resin composition was negative, and the solid content was 50% by mass.

  Next, the obtained photosensitive resin composition was applied on a silicon wafer by a spin coater. Thus, a liquid film having a thickness of 10 μm was obtained.

  Next, the obtained liquid film was heated at 120 ° C. for 5 minutes in the atmosphere on a hot plate and dried. Thereby, the coating film was obtained.

  Then, melt viscosity in 30-150 ° C was measured about the obtained coating film. The measurement results are shown in Table 2. In addition, the slope of the curve at 50 ° C. was determined based on the melt viscosity curve obtained from the result of the melt viscosity measurement.

Next, the coating film was subjected to exposure processing using a negative pattern mask and an i-line stepper. The exposure dose was 700 mJ / cm ² .
Next, the coated film after exposure was subjected to a post-exposure heat treatment at 70 ° C. for 5 minutes.

Next, after performing spray development processing under conditions of 3000 rpm and 20 seconds using propylene glycol monomethyl ether acetate (PGMEA) at 25 ° C. as a developing solution, the processing is shaken off under conditions of 3000 rpm and 15 seconds. The unexposed area was dissolved and removed. Thereafter, it was rinsed with isopropyl alcohol (IPA). Thereby, the pattern containing the through-hole which penetrates a coating film was processed.
Next, the coating was cured by heating at 200 ° C. for 90 minutes to obtain a test piece.

(Examples 2 to 11)
Test pieces were obtained in the same manner as in Example 1 except that the preparation conditions of the test pieces were changed as shown in Tables 1 to 3.

(Comparative Examples 1 to 4)
Test pieces were obtained in the same manner as in Example 1 except that the preparation conditions of the test pieces were changed as shown in Tables 1 to 3.

2. Evaluation of Test Pieces 2.1 Inclination Angle of Side of Opening First, the test pieces obtained in the respective examples and the respective comparative examples were cut in the thickness direction with a diamond cutter.

  Next, the cut surface was observed with an electron microscope, and the angle (tilt angle) between the side surface of the opening and the upper surface of the organic substrate was measured. The measurement results are shown in Tables 2 and 3.

  FIG. 11 shows an observation image (a) of the cross section of the test piece obtained in Comparative Example 2 and an observation image (b) of the cross section of the test piece obtained in Example 2. In the observation image (a), it can be seen that the inner surface of the opening has a so-called reverse taper shape. On the other hand, in the observation image (b), it can be seen that the inner surface of the opening has a so-called forward tapered shape.

2.2 Film Formation of Metal Layer First, a copper thin film (metal layer) was formed by a sputtering method on the test pieces obtained in each of the examples and the comparative examples.
Next, the test piece on which copper was deposited was cut in the thickness direction with a diamond cutter.

  Next, the cut surface was observed with an electron microscope to observe the film formation state of the thin film. And the observation result was evaluated in light of the following evaluation criteria.

<Evaluation criteria for film formation state>
:: The seed layer is formed without interruption. Δ: The site where the seed layer is very thin is included. ×: The seed layer is interrupted. The evaluation results are shown in Tables 2 and 3.

  As apparent from Tables 2 and 3, in the test piece obtained in each example, the inclination angle of the side surface of the opening is 90 ° or less, and the inner surface of the opening has a so-called forward tapered shape Was admitted.

  Moreover, when the copper thin film considered as a seed layer was formed into a film with respect to the test piece obtained by each Example, it was recognized that generation | occurrence | production of the film-forming defect is suppressed.

REFERENCE SIGNS LIST 1 semiconductor device 2 through electrode substrate 3 semiconductor package 5 photosensitive resin varnish 20 photosensitive resin film 21 organic insulating layer 23 semiconductor chip 24 lower layer wiring layer 25 upper layer wiring layer 26 solder bump 31 package substrate 32 semiconductor chip 33 bonding wire 34 sealing Layer 35 solder bump 202 substrate 210 photosensitive resin layer 221 through wiring 222 through wiring 251 organic insulating layer 252 organic insulating layer 253 wiring layer 254 through wiring 411 mask 412 mask 421 opening 421 a side 422 opening 423 opening 424 opening 2510 Photosensitive resin layer 2520 Photosensitive resin layer C Intermediate point H Height L Virtual line S1 Chip placement step S2 Film patterning step S21 First resin layer placement step S22 First pre-exposure heating step S23 First exposure step S24 After first exposure Heating step S2 1st development process S26 1st penetration wiring formation process S3 upper layer wiring layer formation process S31 2nd resin layer arrangement process S32 2nd pre-exposure heating process S33 2nd exposure process S34 2nd post-exposure heating process S35 2nd development process S36 wiring Layer formation process S37 Second through wiring formation process S4 Substrate peeling process S5 Lower layer wiring layer formation process S6 Solder bump formation process S7 Lamination process θ Inclination angle

Claims (7)

A photosensitive resin composition having a melt viscosity of 5 Pa · s or less measured under the measurement conditions of a temperature elevation rate of 5 ° C./min, a frequency of 0.1 Hz and a heating temperature of 30 to 150 ° C. A resin layer disposing step of obtaining a layer;
An exposure step of subjecting the photosensitive resin layer to exposure processing after the resin layer disposing step;
A post-exposure heating step of applying a heat treatment of heating the photosensitive resin layer at 50 to 90 ° C. after the exposure step;
A development step of developing the photosensitive resin layer after the post-exposure heating step;
A patterning method comprising:   The patterning method according to claim 1, wherein the heat treatment time is 1 to 30 minutes.   The patterning method according to claim 1, wherein the pressure of the heat treatment is normal pressure. The exposure amount of the exposure process, the patterning method according to any one of claims 1 to 3 which is 100 to 2000 mJ / cm ^2.   The patterning method according to any one of claims 1 to 4, wherein the photosensitive resin composition is in the form of a varnish or a film. A step of obtaining a resin film having a through hole formed by the patterning method according to any one of claims 1 to 5.
Forming a conductive portion in the through hole;
A method of manufacturing a semiconductor device, comprising: Placing a semiconductor chip on a substrate;
Obtaining a resin film having through holes formed by the patterning method according to any one of claims 1 to 5 so as to embed the semiconductor chip;
Forming a conductive portion in the through hole;
A method of manufacturing a semiconductor device, comprising:

Images