KR20200014100A - Apparatus for measuring evaporation rate and method for controlling thereof, film formation apparatus, film formation method and manufacturing method of electronic device - Google Patents

Abstract

According to the present invention, an evaporation rate measuring apparatus is used in a film forming apparatus which evaporates a deposition material from a plurality of evaporation sources and deposits the deposition material on a film formation surface of a substrate. The evaporation rate measuring apparatus comprises: a plurality of evaporation rate sensors which are respectively installed to correspond to the plurality of evaporation sources and each include a plurality of crystal oscillators for monitoring the evaporation rate of the deposition material evaporated from the corresponding evaporation source; an evaporation rate calculation unit installed to correspond to each evaporation rate sensor, and calculating the evaporation rate of the deposition material from each evaporation source based on the monitoring result by each of the evaporation rate sensors; and a control unit controlling the switching timing of the plurality of crystal oscillators in each of the evaporation rate sensors. The control unit simultaneously controls the performance of collective switching of the crystal oscillators in each of the evaporation rate sensors at the same timing, in the plurality of evaporation rate sensors. Therefore, overall operation efficiency can be increased.

Description

FIELD OF MEASURING EVAPORATION RATE AND METHOD FOR CONTROLLING THEREOF, FILM FORMATION APPARATUS, FILM FORMATION METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE}

The present invention relates to an evaporation rate measuring apparatus, a control method of an evaporation rate measuring apparatus, a film forming apparatus, a film forming method, and a manufacturing method of an electronic device.

Recently, an organic EL display device has been in the spotlight as a flat panel display device. The organic EL display device is a self-luminous display, and has excellent characteristics such as response speed, viewing angle, and thickness reduction than the liquid crystal panel display, and is rapidly replacing the existing liquid crystal panel display in various portable terminals such as monitors, televisions, and smartphones. . In addition, it is expanding its application fields to automotive displays and the like.

The element of the organic EL display device has a basic structure in which an organic material layer that emits light is formed between two opposite electrodes (cathode electrode and anode electrode). The organic material layer and the metal electrode layer of the organic EL display device are manufactured by heating an evaporation source in which a deposition material is accommodated in a vacuum chamber to evaporate the deposition material and depositing the film on a substrate through a mask in which a pixel pattern is formed.

In particular, the film forming apparatus uses a crystal oscillator as the evaporation rate sensor to measure and control the thickness and film formation rate of the deposition material deposited on the substrate. The crystal oscillator can calculate the evaporation rate using the relationship between the natural oscillation frequency (resonance frequency) of the crystal oscillator and the thickness of the deposition material deposited on the electrodes of the crystal oscillator.

When the deposition material is deposited to a certain thickness or more, the crystal oscillator becomes unstable or cannot maintain the resonance oscillation of the crystal oscillator. In this case, the crystal oscillator is usually a plurality of crystals in one sensor for replacement with a new crystal oscillator. An evaporation rate sensor with a vibrator is used.

On the other hand, as the size of the substrate to be formed increases in size, a film forming apparatus in which a plurality of evaporation sources are arranged in the film forming apparatus in order to increase the film forming speed and the like, and an evaporation rate sensor is provided corresponding to each of the evaporating sources has been proposed.

As described above, in the case of the film forming apparatus provided with a plurality of evaporation rate sensors, the overall operating efficiency of the film forming apparatus may vary greatly depending on how to control the replacement (transition) timing according to the determination of the lifetime of the crystal oscillator in each evaporation rate sensor. Research on the effective crystal oscillator exchange (transition) timing of this evaporation rate sensor has not been sufficiently conducted.

In view of the above, the present invention provides a film forming apparatus provided with a plurality of evaporation rate sensors, by effectively controlling the replacement (transfer) timing of the crystal oscillator of each evaporation rate sensor, thereby ensuring the maximum possible film forming period of the film forming apparatus. An object of the present invention is to provide an evaporation rate measuring apparatus, a control method of an evaporation rate measuring apparatus, a film forming apparatus, a film forming method, and a manufacturing method of an electronic device that can improve the overall operating efficiency.

The evaporation rate measuring device according to the present invention is an evaporation rate measuring device used in a film forming apparatus for evaporating a deposition material from a plurality of evaporation sources and depositing the film on a film formation surface of a substrate, and a plurality of evaporation units provided corresponding to each of the plurality of evaporation sources. A rate sensor, each comprising a plurality of evaporation rate sensors including a plurality of crystal oscillators for monitoring the evaporation rate of the deposition material evaporated from the corresponding evaporation source, and corresponding to the respective evaporation rate sensors, An evaporation rate calculating unit that calculates an evaporation rate of the deposition material from each evaporation source based on the monitoring result by the evaporation rate sensor, and a control unit that controls the switching timing of the plurality of quartz crystal oscillators in the evaporation rate sensors. Includes, the control unit, the plurality of increments With respect to the rate sensor, the crystal oscillator in each of the evaporation rate sensor characterized in that for controlling to transfer the batch in the same timing.

A control method of an evaporation rate measuring apparatus according to the present invention is a control method of an evaporation rate measuring apparatus used in a film forming apparatus for evaporating a deposition material from a plurality of evaporation sources and depositing the film on a film forming surface of a substrate. A plurality of evaporation rate sensors provided corresponding to each of the plurality of evaporation sources, each of a plurality of evaporation rate sensors including a plurality of crystal oscillators for monitoring the evaporation rate of the deposition material evaporated from the corresponding evaporation source; An evaporation rate calculating unit provided corresponding to each evaporation rate sensor and calculating an evaporation rate of the evaporation material from each evaporation source based on the monitoring result by each evaporation rate sensor; The transfer timing of the plurality of crystal oscillators And a control unit for controlling the control, wherein the control unit controls the plurality of evaporation rate sensors to collectively switch crystal oscillators in the evaporation rate sensors at the same timing.

The film forming apparatus according to the present invention is a film forming apparatus for evaporating and depositing a vapor deposition material on a film forming surface of a substrate, the film forming apparatus comprising: a substrate holding unit holding the substrate and a plurality of surfaces disposed in a surface facing the film forming surface of the substrate; A plurality of evaporation rate sensors provided in correspondence with each of said plurality of evaporation sources, each of said plurality of evaporation rates including a plurality of crystal oscillators for monitoring evaporation rates of said deposition material evaporated from said corresponding evaporation sources; A evaporation rate calculator configured to correspond to each of the evaporation rate sensors and to calculate an evaporation rate of the evaporation material from the respective evaporation sources based on the monitoring result of the evaporation rate sensors; Control to control the switching timing of the plurality of quartz crystal oscillators in the sensor The and wherein the control section, with respect to the plurality of evaporation rate sensor, and a quartz oscillator in the respective evaporation rate sensor characterized in that for controlling to transfer the batch in the same timing.

According to the present invention, in the film deposition apparatus provided with a plurality of evaporation rate sensors, by effectively controlling the replacement (transition) timing of the crystal oscillator of each evaporation rate sensor, the film forming apparatus can be formed as long as possible and the overall operation efficiency is improved. An evaporation rate measuring apparatus, a control method of an evaporation rate measuring apparatus, a film forming apparatus, a film forming method, and a manufacturing method of an electronic device can be provided.

1 is a schematic diagram of a part of an electronic device manufacturing apparatus.
2 is a schematic view of a film forming apparatus according to an embodiment of the present invention.
3 is a schematic view of a rotary multi-point evaporation source (revolver).
4 is a top view for explaining an arrangement relationship between a substrate and a plurality of evaporation sources in a film forming apparatus according to an embodiment of the present invention.
Fig. 5A is a schematic diagram showing the cross-sectional shape of the crystal oscillator, and Fig. 5B is a top view of the evaporation rate sensor having a plurality of crystal oscillators.
6 is a graph showing a change over time of the impedance of a crystal oscillator.
FIG. 7 is a timing chart for explaining when the lifetime of the crystal oscillator of each evaporation rate sensor reaches its end.
8 is a timing diagram illustrating a switching timing control method of a crystal oscillator according to the present invention.
9 is a schematic diagram of the organic EL device of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment and Example of this invention are described with reference to drawings. However, the following embodiments and examples merely show preferred configurations of the present invention by way of example, and the scope of the present invention is not limited to these configurations. In addition, in the following description, the hardware configuration, software configuration, processing flow, manufacturing conditions, size, material, shape, etc. of an apparatus are in order to limit the scope of this invention to this unless there is particular notice. no.

The present invention can be preferably applied to an apparatus for forming a thin film (material layer) having a desired pattern by vacuum deposition on the surface of a flat substrate. Arbitrary materials, such as glass, resin, a metal, can be selected as a material of a board | substrate, and arbitrary materials, such as an organic material and metallic materials (metal, a metal oxide, etc.), can also be selected as a vapor deposition material. The technique of this invention is applicable to manufacturing apparatuses, such as an organic electronic device (for example, organic electroluminescence display, thin film solar cell), an optical member, specifically ,. Especially, in the manufacturing apparatus of an organic electroluminescence display, since the evaporation material is formed and the organic electroluminescence display element is formed, it is one of the preferable application examples of this invention.

<Manufacture apparatus of electronic device>

1: is a schematic diagram which shows an example of the manufacturing apparatus of an electronic device.

The electronic device manufacturing apparatus of FIG. 1 is used for manufacturing a display panel of an organic EL display device for a smartphone, for example. In the case of a display panel for a smartphone, for example, after forming a film for forming an organic EL element on a substrate having a full size (about 1500 mm × about 1850 mm) or a half cut size (about 1500 mm × about 925 mm) The substrate is cut out to produce a plurality of small size panels.

The electronic device manufacturing apparatus generally includes a plurality of cluster devices as shown in FIG. 1, and each cluster device 1 includes a plurality of film formation chambers in which a process (eg, film formation) is performed on the substrate 10. (11), the some mask stock chamber 12 in which the mask before and behind use is accommodated, and the conveyance chamber 13 arrange | positioned at the center are provided.

In the conveyance chamber 13, the conveyance robot 14 which conveys the board | substrate 10 between the some film-forming chambers 11, and conveys a mask between the film-forming chamber 11 and the mask stock chamber 12 is installed. do. The transfer robot 14 is a robot which has a structure in which the robot hand holding the board | substrate 10 is attached to the articulated arm, for example.

Each film forming chamber 11 is provided with a film forming apparatus (also called a deposition apparatus). In the film forming apparatus, the deposition material stored in the evaporation source is heated and evaporated by a heater and deposited on the substrate through a mask. A series of film formation such as the exchange of the substrate 10 with the transfer robot 14, the adjustment of the relative position of the substrate 10 and the mask (alignment), the fixing of the substrate 10 onto the mask, and the deposition (deposition). The process is automatically performed by the film forming apparatus.

In the mask stock chamber 12, a new mask and a used mask to be used in the film forming process in the film forming chamber 11 are divided and stored in two cassettes. The transfer robot 14 transfers the used mask from the deposition chamber 11 to the cassette of the mask stock chamber 12, and transfers the new mask housed in another cassette of the mask stock chamber 12 to the deposition chamber 11. Return to

The cluster apparatus 1 includes a pass chamber 15 for transferring the substrate 10 from the upstream side to the cluster apparatus 1 in the flow direction of the substrate 10, and a film forming process completed in the cluster apparatus 1. A buffer chamber 16 for connecting the substrate 10 to the downstream cluster device is connected. The conveyance robot 14 of the conveyance chamber 13 receives the board | substrate 10 from the pass chamber 15 of an upstream, and receives one of the film-forming chambers 11 in the said cluster apparatus 1 (for example, film-forming chamber 11a). Return to). In addition, the transfer robot 14 receives the substrate 10 on which the film forming process in the cluster device 1 is completed from one of the plurality of film forming chambers 11 (for example, the film forming chamber 11b) and is connected to the downstream side. It returns to the buffer chamber 16.

The swing chamber 17 which changes the direction of a board | substrate is provided between the buffer chamber 16 and the path chamber 15. As shown in FIG. As a result, the direction of the substrate becomes the same in the upstream cluster apparatus and the downstream cluster apparatus, thereby facilitating substrate processing.

In the present embodiment, the configuration of the electronic device manufacturing apparatus has been described with reference to FIG. 1, but the present invention is not limited thereto, and may have other types of chambers, and arrangements between the chambers may vary.

Hereinafter, the structure of the film-forming apparatus provided in the film-forming chamber 11 is demonstrated.

<Film forming device>

2 is a cross-sectional view schematically showing the configuration of the film forming apparatus 2. Although the example shown shows the structure of the film-forming apparatus 2 of the metallic vapor deposition material used especially in forming a metal electrode layer, this invention is not limited to this, It is applied also to the film-forming apparatus for depositing organic materials. It is possible.

The film forming apparatus 2 includes a vacuum chamber 20. The interior of the vacuum chamber 20 is maintained in a reduced pressure atmosphere such as vacuum or an inert gas atmosphere such as nitrogen gas. The substrate holding unit 21 and the mask stage 22 are installed in the upper part of the vacuum chamber 20, and the evaporation source 23 is installed in the lower part of the vacuum chamber 20.

The board | substrate holding unit 21 is a means of holding and conveying the board | substrate 10 received from the conveyance robot 14 of the conveyance chamber 13, and is also called a board | substrate holder.

The frame stage mask stage 22 is provided below the substrate holding unit 21, and the mask 222 is placed on the mask stage 22. The mask 222 has an opening pattern corresponding to the thin film pattern to be formed on the substrate 10.

During film formation, the substrate holding unit 21 is lowered relative to the mask stand 22 (or the mask stand 22 is raised toward the substrate holding unit 21), so that the substrate holding unit 21 is formed. After the substrate 10 held by the substrate 10 is placed on the mask 222, the substrate holding unit 21 and the mask stage (by the rotating shaft 27 introduced from the upper side (outside) of the vacuum chamber 20) By rotating 22, the mask 222 and the substrate 10 placed on the mask are rotated. This is to allow the metal deposition material to be deposited with a uniform thickness on the substrate.

Although not shown in FIG. 2, various driving mechanisms including an actuator for rotationally driving the rotary shaft 27 are provided on the outside (atmosphere side) of the upper surface of the vacuum chamber 20.

In addition, a substrate shutter (not shown) may be provided below the mask stage 22. The substrate shutter covers the substrate 10 in addition to at the time of deposition on the substrate 10 to prevent the deposition material evaporated from the evaporation source 23 deposited on the substrate 10.

An evaporation source 23 and an evaporation source shutter 25 including a crucible 231 in which the deposition material to be deposited on the substrate 10 is stored and a heater (not shown) for heating the crucible in the lower portion of the vacuum chamber 20. And an evaporation rate sensor 26 is provided.

A plurality of evaporation sources 23 of the metallic vapor deposition material deposition apparatus 2 are provided on the bottom of the vacuum chamber, and each evaporation source 23 includes a plurality of crucibles 231. FIG. 3 shows a detailed configuration of the evaporation source 23. Each evaporation source 23 includes a plurality of crucibles 231 arranged on a circumference and rotated (rotated) by a rotation driving mechanism (not shown). The position of the crucible 231 is sequentially moved, and the vapor deposition material is sequentially deposited on the substrate 10 by sequentially evaporating the deposition material from the crucible (marked in black) which has been moved to a predetermined deposition position according to the position movement of the crucible. It is a typical multipoint evaporation source (revolver).

4 is a top view for explaining an arrangement relationship between the substrate 10 and the plurality of evaporation sources 23 in the film forming apparatus 2.

As described above, the substrate 10 that is driven and rotated by the rotation shaft 27 is disposed on the upper portion of the vacuum chamber of the film forming apparatus 2 during the film formation. In the lower part of the vacuum chamber of the film-forming apparatus 2, the some evaporation source 23 is arrange | positioned in the surface opposite to the film-forming surface of the board | substrate 10 facing the board | substrate 10. As shown in FIG. In this example, four evaporation sources 23 are arranged in a rectangular shape corresponding to each corner of the film forming apparatus 2 as viewed from the top, and between two adjacent evaporation sources corresponding to the long sides of these four evaporation sources. Small diameter evaporation sources having fewer crucibles than the evaporation sources of the corner portions are arranged one by one, and a total of six evaporation sources are arranged.

The number of the plurality of evaporation sources 23 disposed in the film forming apparatus 2, the number of the crucibles 231 provided in each evaporation source 23, and the like are not limited thereto, and may be appropriately changed according to design.

As described above, one of the plurality of crucibles 232 in each evaporation source 23 is located at the deposition position at the time of film formation. The deposition position refers to a position where the crucible located at the position evaporates and supplies the deposition material toward the substrate. That is, each evaporation source 23 is a crucible 232 (hereinafter referred to as a "deposition crucible") located at the deposition position at the time of film formation by heating to a high temperature (for example, 1300 ℃) by a heater to the crucible 232 The vapor deposition material contained therein is evaporated and deposited on the substrate 10.

When the deposition material in the crucible 232 at the deposition position is exhausted, the evaporation source 23 is rotated to drive the crucible 232 at the deposition position to the post-deposition position, and the crucible 233 at the preheating position is deposited. Rotate to position 232.

The preheating position is a position for preheating the crucible to be moved to the deposition position next time. Hereinafter, the crucible 233 located in a preheating position is also called "the crucible for preheating." In this manner, by heating the crucible 233 to be moved to the deposition position next time in advance, the time required to heat the crucible after being moved to the deposition position can be reduced, and the film formation time can be shortened.

The deposition position and the preheating position are spaced apart so that the crucibles at that position are not affected by thermal interference with each other. In this example, the deposition crucible 232 and the preliminary heating crucible 233 are arranged one after the other.

The vapor deposition is performed while the evaporation source 23 is rotated until the evaporation materials of all the crucibles 231 of each evaporation source 23 are consumed, and when all the evaporation materials are consumed, the film forming apparatus 2 is stopped and the crucible 231 is operated. The deposition material is again filled in.

Returning to FIG. 2, in order to prevent the deposition material evaporated from the crucible at the vapor deposition position on the substrate 10 from being deposited on the substrate 10 temporarily as necessary (for example, in a preparation step before the start of film formation, etc., the evaporation source). In order to prevent the deposition material from scattering to the substrate 10 until the evaporation rate from 23 is stabilized, an evaporation source shutter 25 for shielding or opening the movement path of the deposition material to the substrate 10 is provided. Can be installed. When the evaporation source shutter 25 is rotated to open the upper side of the crucible at the vapor deposition position, the vapor deposition material from the crucible at the vapor deposition position flies toward the substrate 10 and film formation on the substrate 10 is started.

In addition, the film forming apparatus 2 is provided with an evaporation rate measuring device for monitoring the amount of evaporation from the evaporation source 23 during film formation and calculating the film thickness deposited on the substrate 10 therefrom. It explains in detail.

<Evaporation rate measuring device>

The evaporation rate measuring device according to the present invention includes an evaporation rate sensor 26 for monitoring the rate of evaporation material evaporated from the evaporation crucible 232 of each evaporation source 23 and the measurement from the evaporation rate sensor 26. A result of calculating the film thickness or the deposition rate on the substrate, determining the lifetime of the evaporation rate sensor 26, and including an evaporation rate calculation and sensor driving unit 24 for driving the evaporation rate sensor 26. .

The evaporation rate sensor 26 is provided corresponding to each evaporation source 23 in a region between the film formation surface of the substrate 10 and the plurality of evaporation sources 23. Specifically, the evaporation rate sensor 26 is located outside the circle C1 (see FIG. 4) that connects the rotational center of the evaporation source 23 so as not to affect the film formation on the substrate 10 during film formation. It is preferable to be installed in.

The evaporation rate sensor 26 includes a plurality of crystal oscillators 30 whose natural oscillation frequency (resonance frequency) changes in accordance with the variation of the evaporation rate.

FIG. 5A is a schematic diagram showing the cross-sectional shape of each crystal oscillator 30, and FIG. 5B is a top view showing the configuration of an evaporation rate sensor 26 having a plurality of crystal oscillators 30. FIG. .

As shown in FIG. 5A, each crystal oscillator 30 has a structure in which electrode films 32 and 33 are formed on the front and rear surfaces of the quartz crystal plate 31 cut in a predetermined crystal direction.

As the quartz plate 31 used for the crystal oscillator 30, it is preferable to use a quartz crystal having an AT-cut having excellent temperature characteristics. As shown in Fig. 5 (a), the surface or the back surface of the quartz crystal plate 31 may be a curved surface having a convex shape. Preferably, the back surface of the electrode film 33 side opposite to the deposition surface of the deposition material is curved. The surface of the electrode film 32 on which the evaporation material is deposited is made flat so that the stability of vibration of the crystal oscillator 30 can be improved.

The electrode films 32 and 33 of the crystal oscillator 30 are preferably made of an alloy containing aluminum (Al) or gold (Au). This is because the aluminum alloy or gold electrode films 32 and 33 have good adhesion with the deposition material, and the deposition film deposited on the electrode film 32 of the crystal oscillator 30 can follow the resonance vibration of the crystal oscillator 30 well. Because it can. In FIG. 5 (a), the deposition material is directly deposited on the electrode film 32, but on the electrode film 32, a third adhesive layer having a better adhesion to the electrode material and continuously changing the boundary with the deposition material is provided. May be further formed (e.g., an organic material containing carbon different from the vapor deposition material).

When an alternating potential is applied to the electrode films 32 and 33 of the crystal oscillator 30, the crystal oscillator 30 vibrates due to the piezoelectric properties of the crystal, and when the thickness of the crystal plate satisfies a predetermined condition, It will vibrate. The resonant frequency of the crystal oscillator 30 changes according to the mass variation of the deposition material deposited on the electrode film 32, and the variation between the resonance value of the crystal oscillator 30 and the mass variation value of the deposition material is as follows. The relation (Sauerbrey) is established.

(1)

(One)

Where Δf is the variation of resonant frequency, Δm is the mass variation of the deposited material deposited on the electrode 32 of the crystal oscillator, f is the fundamental frequency of the crystal, μ is the shear modulus of the crystal, ρ _Q Is the density of crystal and A is the electrode area. That is, as the deposition material is deposited on the electrode 32 of the crystal oscillator 30 and its mass increases, the resonance frequency of the crystal oscillator 30 decreases.

The evaporation rate calculation unit 24-1 in the evaporation rate calculation unit 24 and the sensor drive unit 24 uses the relation to measure the change in the resonance frequency of the crystal oscillator 30 on the electrode film 32 from the result. The mass variation value of the film deposited on the film, as well as the film thickness and film formation rate, can be obtained.

As illustrated in FIG. 5B, the evaporation rate sensor 26 includes a plurality of such crystal oscillators 30.

Only the crystal oscillator 30 at the position corresponding to the opening 34 among the plurality of crystal oscillators 30 is exposed to the evaporation source 23, and the deposition material scattered from the evaporation source 23 is deposited. This measures the film thickness and deposition rate of the deposition material deposited on the substrate. In the meantime, the remaining crystal oscillator 30 remains unexposed to the evaporation source 23, and when the crystal oscillator 30 exposed to the evaporation source 23 reaches the end of its life, the evaporation rate calculation and the sensor drive unit 24 are performed. The sensor drive unit 24-3 rotates the other crystal vibrator 30 to a position corresponding to the opening 34, and continues to measure the film thickness and the film formation rate. Details of the switching timing control of the plurality of lifetime oscillators 30 will be described later.

In the evaporation rate sensor 26, as shown in FIG. 5B, the amount of deposition material deposited on the crystal oscillator 30 at a position corresponding to the opening 34 using the rotatable chopper 35. Can be adjusted. That is, by rotating the chopper 35 having the opening 356 at a constant speed, the crystal oscillator 30 at a position corresponding to the opening 34 is periodically hidden from the evaporation source 23, thereby causing the crystal oscillator ( The amount of deposition material deposited in 30) is adjusted.

<Life judgment of quartz crystal and transfer timing control of quartz crystal>

Hereinafter, the lifetime determination of the crystal oscillator 30 performed by the evaporation rate calculation and the sensor lifetime determination part 24-2 of the sensor drive unit 24 is demonstrated.

As the deposition material is deposited on the crystal oscillator 30, the resonance frequency of the crystal oscillator 30 decreases according to relation (1). When the thickness of the film of the deposition material deposited on the electrode film 32 of the crystal oscillator 30 is so thin that the deposited film can be regarded as completely elastic or rigid (that is, the deposited film behaves as a fully elastic or rigid film). In this case, since the vapor deposition film follows the resonance vibration of the crystal oscillator 30 as it is, the thickness of the vapor deposition film can be accurately calculated from the variation value of the resonance frequency through relational equation (1).

However, if the deposited material deposited on the electrode film 32 of the crystal oscillator 30 becomes thicker than a certain degree, the deposited deposited film can no longer be viewed as completely elastic or rigid. As a result, the resonance oscillation of the crystal oscillator 30 may not be accurately followed, and the resistance component of the impedance value of the crystal oscillator 30 increases. That is, the crystal oscillator 30 may be represented as an electrical equivalent to a series RLC circuit. When the deposition film becomes thick and the deposition film does not accurately follow the resonance vibration of the crystal oscillator 30, the deposition film is the crystal oscillator 30. It acts as a damping against the vibration of. This causes an increase in the value of the resistance R on the equivalent circuit of the crystal oscillator 30, resulting in a loss of vibration energy of the crystal oscillator 30.

When the crystal oscillator 30 vibrates at the resonant frequency, the impedance value of the equivalent circuit becomes equal to the resistance (R) value of the equivalent circuit. At this time, the resistance (R) value is equivalent to the equivalent series resistance (ESR). It is called. When the thickness of the deposited film becomes thicker to some extent, as shown in FIG. 6, the equivalent series resistance value increases. However, until the equivalent series resistance value increases to some extent (t1 in Fig. 6), since the behavior of the deposited film can still be approximated as a fully elastic body or rigid, the thickness of the deposited film from the variation of the resonance frequency can be obtained through relational equation (1). Can be calculated.

However, when the thickness of the deposited film becomes thicker and deformation, cracks, peeling, etc. appear in the deposited film due to the stress inside the deposited film, the deposited film on the electrode film 32 no longer follows the resonance vibration of the crystal oscillator 30 at all. This becomes impossible, which is represented by a large variation in the equivalent series resistance value as shown in FIG. In this case, since it is no longer possible to obtain the variation value (the variation value of the film thickness) of the mass of the deposition material from the variation value of the resonance frequency of the crystal oscillator 30, it is determined that the crystal oscillator 30 has reached the end of its life.

As described above, the lifetime of the crystal oscillator 30 is determined by detecting that the deposited film deposited on the crystal oscillator becomes unpredictable due to various reasons such as deformation, cracking, peeling, and the like. You can think of the way. For example, when the equivalent series resistance value of the crystal oscillator 30 exceeds the predetermined threshold value ESR _TH , the crystal oscillator 30 may determine that the lifetime has expired. Or, based on the variation value ΔESR of the equivalent series resistance value, not the equivalent series resistance value ESR itself of the crystal oscillator 30, the variation value ΔESR is set to a predetermined threshold value ΔESR _TH . In comparison, the lifetime of the crystal oscillator 30 may be determined. In the latter method based on the variation value ΔESR of the equivalent series resistance value, specifically, the variation value ΔESR may be determined based on the number of times exceeding the predetermined threshold value ΔESR _TH .

Although some examples of the life determination method of the crystal oscillator have been described above, the present invention is not limited thereto, and various life determination methods may be applied.

In general, the lifespan of the crystal oscillator 30 determined in this way can be different from each other in each of the plurality of evaporation rate sensors 26 disposed corresponding to each of the plurality of evaporation sources 23.

FIG. 7 is a timing chart for explaining a difference in the life time of the crystal oscillator 30 for each evaporation rate sensor 26 disposed corresponding to each of the plurality of evaporation sources 23.

In the illustrated example, of the six evaporation rate sensors 26 disposed corresponding to each of the six evaporation sources 23, the time when the life of the crystal oscillator 30 in the evaporation rate sensor 1 expires (that is, evaporation). Of the plurality of quartz crystal oscillators 30 in the rate sensor 1, when it is determined that the lifetime of the first quartz crystal oscillator used for the evaporation rate monitoring has expired (t1), the evaporation rate sensor 3, The time when the lifespan of the quartz crystal oscillator 30 of 4, 6 reaches its end (t2), and then the time when the life of the quartz crystal oscillator 30 of the evaporation rate sensors 2, 5 reaches its end (at last). t3).

In this way, it is determined that the time when the life of the crystal oscillator 30 is determined to be different for each evaporation rate sensor 26 is monitored by the characteristic difference between the evaporation rate sensor 26 itself and each evaporation rate sensor 26. This is due to various causes such as the difference in characteristics of each corresponding evaporation source 23 and the difference in evaporation material accommodated in each of the plurality of evaporation sources 23.

As described above, while the life cycle of the crystal oscillator 30 is different for each evaporation rate sensor 26, conventionally, each evaporation rate sensor 26 is independent for each actual evaporation rate of the crystal oscillator 30 to be determined. As a result, a method of switching the crystal oscillator 30 has been used.

That is, in the case of the above-described example, the crystal oscillator 30 of the evaporation rate sensor 1 is rotated and shifted to a new adjacent crystal oscillator in the evaporation rate sensor 1 at the time t1 when the end of life time comes first. Next, the crystal oscillator is switched to the evaporation rate sensors 3, 4 and 6 at the time t2 at which the end of life reaches the end, and the evaporation rate sensor at the time t3 at the end of the end of life. The crystal oscillator switching to (2, 5) was performed independently of each other sequentially.

However, in this system, there is a problem in that the film forming possible period of the film forming apparatus 2 is shortened, thereby reducing the throughput and operating efficiency of the entire apparatus.

While switching of the crystal oscillator 30 of each evaporation rate sensor 26 is performed, the substantial film-forming process with respect to the board | substrate 10 in the film-forming apparatus 2 is suspended. That is, while the transfer of the crystal oscillator 30 is performed (and after completion of the transfer, until the operation of the new crystal oscillator is stabilized), it is impossible to monitor the evaporation rate by the evaporation rate sensor 26. Therefore, for the evaporation source 23 disposed corresponding to the evaporation rate sensor 26, the evaporation source shutter 25 on the evaporation source 23 is closed to prevent the deposition material from scattering onto the substrate 10. In the period in which film formation by any one of the plurality of evaporation sources 23 is not substantially performed in this manner, from the viewpoint of uniform film formation on the entire surface of the substrate 10, the remaining evaporation sources ( Similarly, the evaporation source shutter 25 on each evaporation source 23 is closed or the substrate shutter disposed below the deposition surface of the substrate 10 to close and control the deposition on the substrate 10 as a whole. I'm in control.

Therefore, in the case of the above-described example, when the crystal oscillator 30 is independently switched for each evaporation rate sensor 26 in accordance with the actual life cycle of the crystal oscillator 30 as in this conventional method, the end of life is most likely. First, when the crystal oscillator is switched to the evaporation rate sensor 1 at the time t1, and after the operation is completed, the remaining evaporation rate sensors 2 to 6 in which the transfer timings t2 and t3 arrive sequentially. After the switching operation of the crystal oscillator with respect to all ends, it is possible to actually form a film on the substrate 10. Therefore, as shown in Fig. 7, the filmable period is significantly reduced.

Accordingly, the present invention provides a new timing control method for switching the crystal oscillator, which can sufficiently secure the film forming period and improve throughput and operation efficiency of the entire apparatus.

8 is a timing diagram for explaining a switching timing control method of the crystal oscillator according to the present invention.

As in FIG. 7, in each evaporation rate sensor 26, the time when it is determined that the crystal oscillator 30 has reached the end of its life is indicated by a circle. Shown by the triangle in FIG. 8 is the switching timing of the crystal oscillator 30 of each evaporation rate sensor 26 according to the invention.

That is, the conventional method of FIG. 7 is independent of each evaporation rate sensor 26 by matching the switching timing of the crystal oscillator 30 of the evaporation rate sensor 26 to the actual life cycle of the crystal oscillator 30 (indicated by a circle). In contrast, the present invention controls the crystal oscillator switching timing (indicated by a triangle) of the plurality of evaporation rate sensors 26 provided corresponding to each of the plurality of evaporation sources 23.

Specifically, as shown, in accordance with the time point t1 when the lifetime of the crystal oscillator 30 reaches the end, not only the evaporation rate sensor 1 having the crystal oscillator 30 to be transferred, but also the corresponding At the time point, control is performed so that the crystal oscillator 30 is collectively transferred to the remaining evaporation rate sensors 2 to 6 that have not yet reached their end of life.

To this end, the apparatus for measuring evaporation rate of the present invention includes a crystal oscillator switching control unit 29 (see FIG. 2) connected to the evaporation rate calculation and sensor drive unit 24 installed corresponding to each evaporation rate sensor 26. . The control unit 29 is based on the evaporation rate calculation and the determination result of the sensor life determination unit 24-2 of the sensor drive unit 24, as described above, at which time the life of the crystal oscillator 30 has reached the end. The evaporation rate calculation and the sensor drive unit 24-3 of the sensor drive unit 24 are performed so that the crystal oscillator 30 transfer operation of each of the plural evaporation rate sensors 26 is performed at the same timing in time. Batch control.

Thus, according to the present invention, compared to the case of individually controlling the switching of the crystal oscillator 30 for each evaporation rate sensor 26 at different timings, the crystal oscillator 30 of the plurality of evaporation rate sensors 26 The film formation stop period occurring at the time of transfer can be reduced, and the filmable period until the next transfer timing can be ensured as much as possible.

<Method for Manufacturing Electronic Device>

Next, an example of the manufacturing method of an electronic device using the film-forming apparatus of this embodiment is demonstrated. Hereinafter, the structure and manufacturing method of an organic electroluminescence display as an example of an electronic device are illustrated.

First, the organic EL display device to be manufactured will be described. FIG. 9A shows an overall view of the organic EL display device 50, and FIG. 9B shows a cross-sectional structure of one pixel.

As shown in Fig. 9A, in the display area 51 of the organic EL display device 50, a plurality of pixels 52 including a plurality of light emitting elements are arranged in a matrix form. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. In addition, the pixel here refers to the smallest unit which enables display of a desired color in the display area 51. In the organic EL display device 50 according to the present embodiment, the pixel 52 is formed by the combination of the first light emitting element 52R, the second light emitting element 52G, and the third light emitting element 52B which exhibit different light emission. ) Is configured. The pixel 52 is often composed of a combination of a red light emitting device, a green light emitting device, and a blue light emitting device. However, the pixel 52 may be a combination of a yellow light emitting device, a cyan light emitting device, and a white light emitting device. no.

(B) is a partial cross-sectional schematic diagram in the A-B line | wire of FIG. 9 (a). The pixel 52 includes a first electrode (anode) 54, a hole transport layer 55, a light emitting layer 56R, 56G, 56B, an electron transport layer 57, and a second electrode (cathode) 58 on the substrate 53. It has an organic electroluminescent element provided with). Of these, the hole transport layer 55, the light emitting layers 56R, 56G, 56B, and the electron transport layer 57 correspond to organic layers. In the present embodiment, the light emitting layer 56R is an organic EL layer emitting red color, the light emitting layer 56G is an organic EL layer emitting green color, and the light emitting layer 56B is an organic EL layer emitting blue color. The light emitting layers 56R, 56G, and 56B are formed in patterns corresponding to light emitting elements (sometimes referred to as organic EL elements) emitting red, green, and blue colors, respectively. In addition, the first electrode 54 is formed separately for each light emitting device. The hole transport layer 55, the electron transport layer 57, and the second electrode 58 may be formed in common with the plurality of light emitting elements 52R, 52G, and 52B, or may be formed for each light emitting element. In order to prevent the first electrode 54 and the second electrode 58 from being short-circuited by foreign matter, an insulating layer 59 is provided between the first electrodes 54. In addition, since the organic EL layer is degraded by moisture or oxygen, a protective layer 60 for protecting the organic EL element from moisture and oxygen is provided.

In order to form the organic EL layer in light emitting element units, a method of forming a film through a mask is used. In recent years, high precision of a display apparatus advances, and the mask of several tens of micrometers of opening width is used for formation of an organic EL layer.

Next, an example of the manufacturing method of an organic electroluminescence display is demonstrated concretely.

First, a substrate 53 on which a circuit (not shown) and a first electrode 54 for driving an organic EL display device are formed is prepared.

The acrylic resin is formed by spin coating on the substrate 53 on which the first electrode 54 is formed, and the acrylic resin is patterned such that an opening is formed in a portion where the first electrode 54 is formed by lithography. To form. This opening corresponds to a light emitting region where the light emitting element actually emits light.

The substrate 53 having the insulating layer 59 patterned is loaded into the first organic material film deposition apparatus to hold the substrate by the substrate holding unit and the electrostatic chuck, and the hole transport layer 55 is disposed in the first electrode 54 of the display area. A film is formed as a common layer. The hole transport layer 55 is formed by vacuum deposition. In reality, since the hole transport layer 55 is formed to have a larger size than the display region 51, a high-precision mask is not necessary.

Next, the substrate 53 formed up to the hole transport layer 55 is carried into the second film forming apparatus and held by the substrate holding unit. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 56R emitting red is formed in a portion where the red emitting element of the substrate 53 is disposed.

Similarly to the formation of the light emitting layer 56R, the light emitting layer 56G emitting green is formed by the third film forming apparatus, and further, the light emitting layer 56B emitting blue is formed by the fourth film forming apparatus. After the film formation of the light emitting layers 56R, 56G, and 56B is completed, the electron transporting layer 57 is formed over the entire display region 51 by the fifth film forming apparatus. The electron transport layer 57 is formed as a layer common to the light emitting layers 56R, 56G, and 56B of three colors.

The substrate formed up to the electron transport layer 57 is moved to the sixth film forming apparatus to form the second electrode 58, and then the plasma CVD apparatus is formed to form the protective layer 60, and the organic EL display device 50 is formed. To complete.

The light emitting layer made of an organic EL material is exposed when exposed to an atmosphere containing moisture or oxygen until the film formation of the protective layer 60 is completed until the substrate 53 having the insulating layer 59 patterned is brought into the film forming apparatus. There is a risk of deterioration due to moisture or oxygen. Therefore, in this example, the loading and unloading of the substrate between the film forming apparatuses is performed in a vacuum atmosphere or an inert gas atmosphere.

As mentioned above, although the form for implementing this invention was demonstrated concretely, the above-mentioned Example shows one example of this invention, This invention is not limited to the structure of this Example, According to the scope of the present invention, It can be modified.

2: deposition device
23: evaporation source
24: evaporation rate calculation and sensor drive unit
24-1: evaporation rate calculator
24-2: Sensor Life Determination Unit
24-3: Sensor drive
25: evaporation source shutter
26: evaporation rate sensor
29: crystal oscillator transfer control
30: crystal oscillator

Claims (9)

An evaporation rate measuring device used in a film forming apparatus for evaporating a deposition material from a plurality of evaporation sources and depositing the deposited material on a film forming surface of a substrate.
A plurality of evaporation rate sensors provided corresponding to each of the plurality of evaporation sources, each of a plurality of evaporation rate sensors including a plurality of crystal oscillators for monitoring the evaporation rate of the deposition material evaporated from the corresponding evaporation source;
An evaporation rate calculating unit provided corresponding to each evaporation rate sensor and calculating an evaporation rate of deposition material from each evaporation source based on the monitoring result by each evaporation rate sensor;
A control unit for controlling transfer timings of the plurality of quartz crystal oscillators in the evaporation rate sensors,
And the control unit controls the plurality of evaporation rate sensors to collectively switch crystal oscillators in the evaporation rate sensors at the same timing. The method of claim 1,
It is provided corresponding to each said evaporation rate sensor, and further includes the life determination part which determines the lifetime of the crystal oscillator in each said evaporation rate sensor,
The control unit is configured to match the switching timing of the crystal oscillator in the evaporation rate sensor in which the transfer time arrives first according to the life determination result of the life determination unit among the plurality of evaporation rate sensors. An evaporation rate measuring apparatus, characterized in that the control to collectively switch the crystal oscillator. As a control method of the evaporation rate measuring apparatus used for the film-forming apparatus which evaporates a vapor deposition material from a some evaporation source and deposits on the film-forming surface of a board | substrate,
The evaporation rate measuring device,
A plurality of evaporation rate sensors provided corresponding to each of the plurality of evaporation sources, each of a plurality of evaporation rate sensors including a plurality of crystal oscillators for monitoring the evaporation rate of the deposition material evaporated from the corresponding evaporation source;
An evaporation rate calculating unit provided corresponding to each evaporation rate sensor and calculating an evaporation rate of deposition material from each evaporation source based on the monitoring result by each evaporation rate sensor;
A control unit for controlling transfer timings of the plurality of quartz crystal oscillators in the evaporation rate sensors,
And the control unit controls the plurality of evaporation rate sensors to collectively switch crystal oscillators in the evaporation rate sensors at the same timing. The method of claim 3,
The evaporation rate measuring device further includes a life determination unit which is provided corresponding to each evaporation rate sensor and determines the life of the crystal oscillator in the evaporation rate sensors,
The plurality of evaporation rate sensors, according to the control timing, in accordance with the switching timing of the crystal oscillator in the evaporation rate sensor, in which the transfer time arrives first according to the life determination result of the life determination unit, among the plurality of evaporation rate sensors. The control method of the evaporation rate measuring apparatus characterized by controlling to switch collectively the crystal oscillator. A film forming apparatus for evaporating and depositing a deposition material on a film forming surface of a substrate,
A substrate holding unit holding the substrate;
A plurality of evaporation sources disposed in a surface opposite to the film formation surface of the substrate;
A plurality of evaporation rate sensors provided corresponding to each of the plurality of evaporation sources, each of a plurality of evaporation rate sensors including a plurality of crystal oscillators for monitoring the evaporation rate of the deposition material evaporated from the corresponding evaporation source;
An evaporation rate calculating unit provided corresponding to each evaporation rate sensor and calculating an evaporation rate of deposition material from each evaporation source based on the monitoring result by each evaporation rate sensor;
A control unit for controlling transfer timings of the plurality of quartz crystal oscillators in the evaporation rate sensors,
And the control unit controls the plurality of evaporation rate sensors to collectively switch crystal oscillators in the evaporation rate sensors at the same timing. The method of claim 5,
It is provided corresponding to each said evaporation rate sensor, and further includes the life determination part which determines the lifetime of the crystal oscillator in each said evaporation rate sensor,
The control unit is configured to match the switching timing of the crystal oscillator in the evaporation rate sensor in which the transfer time arrives first according to the life determination result of the life determination unit among the plurality of evaporation rate sensors. A film forming apparatus, wherein the crystal oscillator is controlled to be collectively transferred. The method of claim 6,
Each of the plurality of evaporation sources has a plurality of crucibles disposed radially about a rotation axis, and is a rotatable multi-point evaporation source rotatable around the rotation axis. The film-forming method of forming the electrode layer of organic electroluminescent display element using the film-forming apparatus in any one of Claims 5-7. The method of manufacturing an organic electroluminescent display element using the film-forming method of Claim 8.

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