KR20190124679A - Apparatus and Method for treating substrate - Google Patents

Abstract

An embodiment of the present invention provides an apparatus and a method for liquid-processing a substrate. The method for processing a substrate supplies processing liquid onto a rotated substrate to form a liquid film on the substrate. Rotation speed of the substrate is differently set in accordance with a state of the substrate with respect to a bending degree. The present invention is possible to provide photosensitive liquid with uniform thickness with respect to the whole area on the substrate when performing photosensitive liquid coating processing with respect to the substrate in a bending state.

Description

Apparatus and Method for treating substrate

The present invention relates to an apparatus and method for liquid processing a substrate.

In order to manufacture a semiconductor device, various processes such as cleaning, deposition, photography, etching, and ion implantation are performed. Among these processes, a photographic process sequentially performs application, exposure, and development steps. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. An exposure process is a process of exposing a circuit pattern on the board | substrate with which the photosensitive film was formed. The developing step is a step of selectively developing an exposed region of the substrate.

In the application process the photoresist should be applied to a uniform thickness throughout the entire area of the substrate. If the photosensitive liquid is unevenly coated on the substrate, it is a major cause of process defects during the exposure process.

However, due to the development of technology, semiconductor devices are highly integrated, and as the stacking stage of the thin film on the substrate is increased, the above-described processes are performed with the substrate bent.

The occurrence of warpage of the substrate causes the photosensitive liquid to be applied with a nonuniform thickness depending on the area on the substrate during the application process. For example, a curved substrate generates a height difference between the center region and the edge region. In the case of a substrate in which the central region is convex downward, as shown in FIG. On the contrary, in the case of the substrate having the central region convex upward as shown in FIG. 2, the thickness of the photosensitive liquid in the central region of the substrate is lower than that of the photosensitive liquid in the edge region. The difference in thickness of the photosensitive liquid for each region on the substrate described above is greater as the substrate is warped.

Korean Patent Publication No. 2012-0001681

An object of the present invention is to provide an apparatus and a method for applying a photosensitive liquid to a uniform thickness over the entire area of the substrate in a state where the substrate is bent.

It is also an object of the present invention to provide an apparatus and a method capable of improving the liquid treatment efficiency during liquid treatment with respect to the substrate.

Embodiments of the present invention provide a method and apparatus for liquid processing a substrate.

In the method for processing a substrate, a liquid is formed on the substrate by supplying a processing liquid onto the substrate to be rotated, and the rotational speed of the substrate is set differently according to the state of the substrate with respect to the degree of warpage.

The state of the substrate may include a first state in which a central area of the substrate is convex downward, and the greater the bending of the substrate in the first state, the greater the rotation speed may be. The state of the substrate may include a second state in which the central region of the substrate is convex upward, and the greater the bending of the substrate in the second state, the smaller the rotation speed may be provided.

The state of the substrate includes a first state in which the central region of the substrate is convex downward, a second state in which the central region of the substrate is convex upward, and a third state in which the substrate is flat. The rotational speed is set to a first speed, the rotational speed of the substrate is set to a second speed in the second state, and the rotational speed of the substrate is set to a third speed in the third state, wherein the first speed May be faster than the third speed, and the second speed may be slower than the third speed.

The state of the substrate includes a first state in which the central region of the substrate is convex downward and a second state in which the central region of the substrate is convex upward, in which the rotational speed of the substrate is set to the first speed. The rotation speed of the substrate may be set to a second speed in the second state, and the first speed may be faster than the second speed.

The degree of warpage may be measured based on an angle of reflection of light emitted from the substrate and reflected from the substrate.

The treatment liquid may include a photosensitive liquid.

In addition, a method of treating a substrate may include a first heat treatment step of thermally treating a substrate, a coating step of applying a treatment liquid to the substrate after the first heat treatment step, and applying the treatment liquid onto the substrate, and the applying step And a second heat treatment step of thermally treating the substrate, wherein the rotational speed of the substrate in the applying step is set differently depending on the state of the substrate with respect to the degree of warpage of the substrate.

The method may further include a measuring step of measuring the degree of warpage of the substrate before the coating step, wherein the degree of warpage may be measured based on an angle of reflection of light emitted from the substrate and reflected from the substrate.

The first heat treatment step includes a cooling step of cooling the substrate, wherein the cooling step and the applying step are performed in different units from each other, and the measuring step may be performed in a unit in which the cooling step is performed. The coating step includes a pretreatment step of supplying a pretreatment liquid onto the substrate, a liquid supply step of supplying the processing liquid onto the substrate, and a diffusion for stopping supply of the processing liquid and diffusing the processing liquid onto the substrate. The method may further include a step, wherein the rotation speed of the substrate may include a speed of the substrate rotated in the liquid supplying step.

The state of the substrate may include a first state in which a central area of the substrate is convex downward, and the greater the bending of the substrate in the first state, the greater the rotation speed may be.

The state of the substrate may include a second state in which the central region of the substrate is convex upward, and the greater the bending of the substrate in the second state, the smaller the rotation speed may be provided.

The apparatus for processing a substrate includes a heat treatment chamber for performing a heat treatment process of a substrate and a coating chamber for performing a liquid film applying process for applying a liquid film on the substrate, wherein the coating chamber has a housing having a processing space therein, the A substrate support unit for supporting and rotating a substrate in a processing space, a liquid supply unit for supplying a processing liquid onto a substrate supported by the substrate support unit, and a controller for controlling the substrate support unit, wherein the controller is configured to control the substrate. The substrate support unit can be controlled so that the rotational speed of the substrate is different depending on the state of the substrate with respect to the degree of warpage.

The heat treatment unit includes a support plate for supporting the substrate, a cooling member provided on the support plate, and a cooling member for cooling the substrate supported by the support plate, and a measurement member for measuring the degree of bending of the substrate supported by the support plate. Including, but the controller may receive the measurement information from the measuring member to control the substrate support unit.

The measuring member includes an optical sensor, wherein the optical sensor includes a light emitter for emitting an optical element on a substrate supported by the support plate and a light receiver for receiving an optical element emitted from the light emitter, wherein the controller The substrate support unit can be controlled based on the measurement information on the reflection angle of the optical element from the light receiver.

In addition, the method for processing a substrate is to process the substrate by supplying a processing liquid on the substrate to be rotated, the rotational speed of the substrate during the supply of the processing liquid depending on the state of the substrate with respect to the degree of warpage of the substrate It can be set differently.

The processing of the substrate may include a cleaning process of cleaning the substrate, an etching process of etching the substrate, or a developing process of developing the substrate.

The state of the substrate may include a first state in which a central area of the substrate is convex downward, and the greater the bending of the substrate in the first state, the greater the rotation speed may be. The state of the substrate may include a second state in which the central region of the substrate is convex upward, and the greater the bending of the substrate in the second state, the smaller the rotation speed may be provided.

According to the embodiment of the present invention, even when the photosensitive liquid coating process is performed on the bent substrate, the photosensitive liquid may be provided with a uniform thickness over the entire area on the substrate.

 According to the embodiment of the present invention, the liquid treatment efficiency can be improved even for a substrate that is bent during processing by supplying a liquid onto a rotating substrate.

FIG. 1 is a view showing an application state when a photosensitive liquid is applied to a substrate having a central area convex downward.
2 is a view showing an application state when the photosensitive liquid is applied to a substrate having a convex form of a central region.
3 is a plan view of a substrate processing apparatus according to an embodiment of the present invention.
4 is a cross-sectional view of the installation of FIG. 3 as viewed from the AA direction.
FIG. 5 is a cross-sectional view of the equipment of FIG. 3 viewed in the BB direction. FIG.
FIG. 6 is a cross-sectional view of the equipment of FIG. 3 viewed in the CC direction. FIG.
7 is a perspective view illustrating the first buffer of FIG. 3.
FIG. 8 is a view illustrating a flow path provided in the buffer plate of FIG. 7.
9 is a cross-sectional view illustrating the buffer plate and the measuring member of FIG. 7.
10 is a plan view illustrating the substrate processing apparatus of FIG. 3.
11 is a cross-sectional view illustrating the substrate processing apparatus of FIG. 10.
12 is an enlarged perspective view of the nozzle member of FIG. 10.
FIG. 13 is a flowchart illustrating a process of forming a liquid film on a substrate in the installation of FIG. 3.
FIG. 14 is a flowchart illustrating a process of processing a substrate using the apparatus of FIG. 11.
15 and 16 are views illustrating a process of processing a substrate in which a central area is convex downward in FIG. 14.
17 and 18 are views illustrating a process of treating a substrate in a state in which a central area is convex in FIG. 14.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention will be described in more detail. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a more clear description.

The equipment of this embodiment can be used to perform a photolithography process on a substrate, such as a semiconductor wafer. In particular, the equipment of this embodiment can be connected to an exposure apparatus and used to perform an application process and a development process on a substrate.

Hereinafter, the substrate treating apparatus of the present invention will be described with reference to FIGS. 3 to 17.

3 is a view of the substrate processing equipment from the top, FIG. 4 is a view of the equipment of FIG. 3 from the AA direction, FIG. 5 is a view of the equipment of FIG. 3 from the BB direction, and FIG. 6 is a facility of FIG. Is a view from the CC direction.

3 to 6, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, and a second buffer module 500. ), The pre-exposure processing module 600, and the interface module 700. Load port 100, index module 200, first buffer module 300, coating and developing module 400, second buffer module 500, pre and post-exposure processing module 600, and interface module 700. Are sequentially arranged in one direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( The direction in which the 700 is disposed is called a first direction 12, and when viewed from the top, a direction perpendicular to the first direction 12 is called a second direction 14, and the first direction 12 and the second direction are disposed. A direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in the state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door in front may be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module ( 700 will be described in detail.

The load port 100 has a mounting table 120 on which a cassette 20 containing substrates W is placed. The mounting table 120 may be provided in plural, and the mounting tables 200 may be arranged in a line along the second direction 14. In FIG. 2 four mounting tables 120 were provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the mounting table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is generally provided in a hollow rectangular parallelepiped shape and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a height lower than that of the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed in the frame 210. The index robot 220 is a four-axis drive so that the hand 221 which directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, and the third direction 16. This has a possible structure. Index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. Arm 222 is provided in a stretchable and rotatable structure. The support 223 is disposed in the longitudinal direction along the third direction 16. Arm 222 is coupled to support 223 to be movable along support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rail 230 is provided such that its longitudinal direction is disposed along the second direction 14. The pedestal 224 is coupled to the guide rail 230 to be linearly movable along the guide rail 230. In addition, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an empty rectangular parallelepiped, and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located in the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed along the third direction 16 from below. The first buffer 320 is located at a height corresponding to the coating module 401 of the coating and developing module 400, which will be described later, and the second buffer 330 and the cooling chamber 350 will be described later. It is located at a height corresponding to the developing module 402 of 400. The first buffer robot 360 is positioned to be spaced apart from the second buffer 330, the cooling chamber 350, and the first buffer 320 in a second direction 14.

The first buffer 320 temporarily stores the substrate W before the substrate is loaded into the application module 401. In addition, the first buffer 320 is provided to a heat treatment unit that cools the substrate while the substrate W is stored. 7 is a perspective view illustrating the first buffer of FIG. 3. Referring to FIG. 7, a housing 321, a buffer plate 322, and a measuring member are included.

The housing 321 has a space therein. The inner space of the housing 321 functions as a space in which the substrate W is temporarily stored. Housing 321 has a generally cuboidal shape. The housing 321 is an index robot 220, a first buffer robot 360, and an application robot 432 of the application module 401 to be described later, which allows the index robot to carry in or take out the substrate W into the housing. It has an opening in the direction in which 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the applicator robot 432 is provided. A pedestal 324 is provided inside the housing 321. Pedestal 324 may be provided in a rectangular plate. The pedestal 324 may be provided in plurality. Each pedestal 324 is spaced apart from each other in the vertical direction. Accordingly, the inner space of the housing 321 is partitioned in the vertical direction. A plurality of buffer plates 322 is located on each pedestal 324.

FIG. 8 is a view illustrating a flow path provided in the buffer plate of FIG. 7, and FIG. 9 is a cross-sectional view illustrating the buffer plate and the measuring member of FIG. 7. 8 and 9, the buffer plate 322 may be provided in a circular plate shape corresponding to the substrate (W). Each of the buffer plates 322 is spaced apart from each other along the vertical direction. The plurality of buffer plates 322 are positioned to be stacked adjacent to each other. The cooling passage 323 through which the cooling fluid flows is formed in the buffer plate 322. The cooling passage 323 is provided in a single passage. As viewed from the top, the cooling passage 323 may be provided in the concentric shape in the buffer plate 322. For example, the cooling passage 323 may be provided in three circles. Each of the circular cooling passages has a concentric shape and may be provided at a predetermined distance apart. For example, the cooling fluid can be provided with cooling water. Optionally, the buffer plate 322 may cool the substrate W by the thermoelectric element.

The measuring member 326 measures the degree of warpage of the substrate W placed on the buffer plate 322. The measuring member 326 measures the degree of warpage at the top of the substrate W. According to one example, the measuring member 326 is provided to the upper buffer plate 322b of the two buffer plates 322 positioned adjacent to each other, the bending of the substrate W placed on the lower buffer plate 322a. The degree can be measured. The measuring member 326 includes a light emitter 326a and a light receiver 326b. The light emitter 326a emits an optical element in a downwardly inclined direction on the substrate W placed on the lower buffer plate 322a. The light receiver 326b receives the light emitting optical element. The degree of warpage of the substrate W can be measured by the light receiving position of the optical element. That is, the degree of warpage of the substrate W may be measured by the reflection angle of the optical device. Alternatively, the measuring member 326 may be provided in plural and may emit and receive optical elements in different regions of the substrate W. Each measuring member 326 may provide an optical device in an up and down direction to measure a height for each region of the substrate W, and thereby measure a degree of warpage of the substrate W.

In the present embodiment, the degree of warpage of the substrate W is measured while the substrate W is cooled. For this reason, the curvature degree of the board | substrate W can be measured more correctly. For example, in the apparatus which vacuum-adsorbs the board | substrate W or heat-processes the board | substrate W, the measurement of the bending degree of the board | substrate W may be inaccurate.

Optionally, the measuring member 326 may measure the degree of warpage of the substrate W using electromagnetic waves or ultrasonic waves.

The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed in the housing 331 and are spaced apart from each other along the third direction 16. One support W is placed on each support 332. In the housing 331, the index robot 220, the first buffer robot 360, and the developing unit robot 482 of the developing module 402, which will be described later, move the substrate W to the support 332 in the housing 331. An opening (not shown) is provided in a direction in which the index robot 220 is provided, a direction in which the first buffer robot 360 is provided, and a direction in which the developing unit robot 482 is provided so as to be able to carry in or take out. The second buffer 330 has a structure generally similar to the second buffer 320. However, the housing 321 of the second buffer 330 has an opening in a direction in which the index robot 220 is provided, a direction in which the first buffer robot 360 is provided, and a direction in which the developing unit robot 482 is provided. The number of buffer plates provided to the second buffer 330 may be the same or different from the number of the first buffers 320. In an example, the number of buffer plates 332 provided in the second buffer 330 may be greater than the number of buffer plates provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable structure, allowing the hand 361 to move along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable in the third direction 16 along the support 363. The support 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support 363 may be provided longer in the up or down direction. The first buffer robot 360 may simply be provided such that the hand 361 is only biaxially driven along the second direction 14 and the third direction 16.

The cooling chambers 350 respectively cool the substrate W. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and cooling means 353 for cooling the substrate W. As shown in FIG. As the cooling means 353, various methods such as cooling by cooling water or cooling using a thermoelectric element may be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) that positions the substrate W on the cooling plate 352. The housing 351 has the index robot 220 so that the developing robot 482 provided to the index robot 220 and the developing module 402 to be described later can load or unload the substrate W to the cooling plate 352. The provided direction and developing part robot 482 has an opening (not shown) in the provided direction. In addition, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The application and development module 400 has an application module 401 and a development module 402. The application module 401 and the developing module 402 are arranged to partition into each other in layers. In one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photoresist such as a photoresist to the substrate W and a heat treatment process such as heating and cooling the substrate W before and after the resist application process. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. Therefore, the resist coating chamber 410 and the baking chamber 420 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 may be provided, and a plurality of resist coating chambers 410 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six resist application chambers 410 are provided is shown. A plurality of baking chambers 420 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six bake chambers 420 are provided is shown. Alternatively, however, the bake chamber 420 may be provided in larger numbers.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. An applicator robot 432 and a guide rail 433 are positioned in the transfer chamber 430. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 includes the baking chambers 420, the resist coating chambers 400, the first buffer 320 of the first buffer module 300, and the first of the second buffer module 500 described later. The substrate W is transferred between the cooling chambers 520. The guide rail 433 is disposed such that its longitudinal direction is parallel to the first direction 12. The guide rail 433 guides the applicator robot 432 to be linearly moved in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. Arm 435 is provided in a flexible structure to allow hand 434 to move in the horizontal direction. The support 436 is provided such that its longitudinal direction is disposed along the third direction 16. Arm 435 is coupled to support 436 so as to be linearly movable in third direction 16 along support 436. The support 436 is fixedly coupled to the pedestal 437, and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist application chambers 410 all have the same structure. However, the types of photoresist used in each resist coating chamber 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 is provided as a substrate processing apparatus for applying a photoresist such as photoresist onto the substrate W. As shown in FIG. The substrate processing apparatus 800 is subjected to a liquid coating process.

10 is a plan view illustrating the substrate processing apparatus of FIG. 3, and FIG. 11 is a cross-sectional view illustrating the substrate processing apparatus of FIG. 10. Referring to FIGS. 10 and 11, the substrate processing apparatus 800 may include a housing 810 and an airflow. The unit 820, the substrate support unit 830, the processing container 850, the elevating unit 890, the liquid supply unit 840, and the controller 1400 are included.

The housing 810 is provided in a rectangular cylindrical shape having a processing space 812 therein. An opening (not shown) is formed at one side of the housing 810. The opening functions as an inlet through which the substrate W is carried in and out. The opening is provided with a door (not shown), and the door opens and closes the opening. When the substrate processing process proceeds, the door closes the opening to seal the processing space 812 of the housing 810. An inner exhaust port 814 and an outer exhaust port 816 are formed on the lower surface of the housing 810. Air flow formed in the housing 810 is exhausted to the outside through the inner exhaust port 814 and the outer exhaust port 816. According to an example, the airflow introduced into the processing vessel 850 may be exhausted through the inner exhaust port 814, and the airflow provided outside the processing vessel 850 may be exhausted through the outer exhaust port 816.

The airflow providing unit 820 forms a downward airflow in the processing space 812 of the housing 810. The airflow providing unit 820 includes an airflow supply line 822, a fan 824, and a filter 826. Air flow supply line 822 is connected to the housing 810. The airflow supply line 822 supplies external clean air to the housing 810. The filter 826 filters clean air provided from the airflow supply line 822. The filter 826 removes impurities contained in the air. The fan 824 is installed on the upper surface of the housing 810. The fan 824 is located in the central area at the top surface of the housing 810. The fan 824 creates a downdraft in the processing space 812 of the housing 810. When clean air is supplied from the airflow supply line 822 to the fan 824, the fan 824 supplies clean air downward. According to an example, the fan 824 may supply airflows having different flow rates to the processing space according to the substrate processing step.

The substrate support unit 830 supports the substrate W in the processing space 812 of the housing 810. The substrate support unit 830 rotates the substrate W. As shown in FIG. The substrate support unit 830 includes a spin chuck 832, a rotation shaft 834, and a driver 836. Spin chuck 832 is provided to a substrate support member 832 that supports the substrate. Spin chuck 832 is provided to have a circular plate shape. The substrate W is in contact with the upper surface of the spin chuck 832. The spin chuck 832 is provided to have a diameter smaller than that of the substrate W. As shown in FIG. According to an example, the spin chuck 832 may vacuum the substrate W to chuck the substrate W. Optionally, the spin chuck 832 may be provided as an electrostatic chuck that chucks the substrate W using static electricity. In addition, the spin chuck 832 may chuck the substrate W with a physical force.

The rotation shaft 834 and the driver 836 are provided to the rotation driving members 834 and 836 for rotating the spin chuck 832. The axis of rotation 834 supports the spin chuck 832 below the spin chuck 832. The rotation shaft 834 is provided such that its longitudinal direction is directed upward and downward. The rotating shaft 834 is provided to be rotatable about its central axis. The driver 836 provides a driving force for the rotation shaft 834 to rotate. For example, the driver 836 may be a motor capable of varying the rotational speed of the rotating shaft. The rotation driving members 834 and 836 may rotate the spin chuck 832 at different rotational speeds according to the substrate processing step.

The processing vessel 850 is located in the processing space 812 of the housing 810. The processing container 850 is provided to enclose the substrate support unit 830. The processing container 850 is provided to have a cup shape with an open top. The processing vessel 850 includes an inner cup 852 and an outer cup 862.

The inner cup 852 is provided in a circular cup shape surrounding the rotation shaft 834. As viewed from the top, the inner cup 852 is positioned to overlap the inner exhaust port 814. As viewed from the top, the top surface of the inner cup 852 is provided such that each of its outer and inner regions is inclined at different angles. According to an example, the outer region of the inner cup 852 faces downwardly inclined direction away from the substrate support unit 830, and the inner region faces upwardly inclined direction away from the substrate support unit 830. Is provided. The point where the outer region and the inner region of the inner cup 852 meet each other is provided to correspond to the side end portion of the substrate W in the vertical direction. The top outer region of the inner cup 852 is provided to be rounded. The top outer region of the inner cup 852 is provided concave down. The upper outer surface area of the inner cup 852 may be provided as an area through which the processing liquid flows.

The outer cup 862 is provided to have a cup shape surrounding the substrate support unit 830 and the inner cup 852. The outer cup 862 has a bottom wall 864, sidewalls 866, top wall 870, and inclined wall 870. Bottom wall 864 is provided to have a circular plate shape with a hollow. A recovery line 865 is formed at the bottom wall 864. The recovery line 865 recovers the processing liquid supplied on the substrate W. The treatment liquid recovered by the recovery line 865 can be reused by an external liquid regeneration system. The side wall 866 is provided to have a circular cylindrical shape surrounding the substrate support unit 830. Sidewall 866 extends in a direction perpendicular to the side end of bottom wall 864. Sidewall 866 extends up from bottom wall 864.

The inclined wall 870 extends inwardly of the outer cup 862 from the top of the sidewall 866. The inclined wall 870 is provided to be closer to the substrate support unit 830 toward the top. The inclined wall 870 is provided to have a ring shape. The upper end of the inclined wall 870 is positioned higher than the substrate W supported by the substrate support unit 830.

The lifting unit 890 lifts and moves the inner cup 852 and the outer cup 862, respectively. The elevating unit 890 includes an inner movable member 892 and an outer movable member 894. The inner side moving member 892 raises and lowers the inner cup 852, and the outer side moving member 894 moves the outer cup 862 up and down.

The liquid supply unit 840 supplies the processing liquid and the pretreatment liquid onto the substrate W. FIG. The liquid supply unit 840 includes a moving member 846 and a nozzle member 1000. The moving member 846 moves the nozzle member 1000 to the process position or to the standby position. Here, the process position is a position where the nozzle member 1000 faces the substrate W supported by the substrate support unit 830, and the standby position is a position outside the process position. For example, the nozzle member 1000 and the substrate W may be disposed to face each other in the vertical direction at the process position.

The moving member 846 moves the nozzle member 1000 in one direction. According to an example, the moving member 846 may linearly move the nozzle member 1000 in one direction. One direction may be a direction parallel to the first direction 12. The moving member 846 includes a guide rail 842 and an arm 844. The guide rail 842 is provided so that the longitudinal direction may face a horizontal direction. The guide rail 842 may have a length direction toward the first direction 12. The guide rail 842 is located at one side of the processing container 850. An arm 844 is provided on the guide rail 842. Arm 844 is moved for a drive member (not shown) provided in guide rail 842. For example, the drive member may be a linear motor. The arm 844 is provided in a bar shape having a longitudinal direction perpendicular to the guide rail 842 when viewed from the top. The nozzle member 1000 is provided in the bottom end of the arm 844. The nozzle member 1000 is moved with the arm 844.

12 is an enlarged perspective view of the nozzle member of FIG. 10. Referring to FIG. 12, the nozzle member 1000 discharges a processing liquid and a pretreatment liquid. The nozzle member 1000 includes a support body 1220, a pretreatment nozzle 1240, and an application nozzle 1260. The support body 1220 simultaneously supports the pretreatment nozzle 1240 and the application nozzle 1260. Each nozzle 1240 and 1260 is provided such that the discharge port faces in a vertical downward direction. When viewed from the top, the pretreatment nozzle 1240 and the application nozzle 1260 are arranged in a direction parallel to the moving direction of the nozzle member 1000. According to an example, the pretreatment nozzles 1240 and the application nozzles 1260 may be arranged in a line along one direction which is a moving direction of the nozzle member 1000. The application nozzle 1260 is provided in plurality. The plurality of application nozzles 1260 may be arranged along one direction with the pretreatment nozzle 1240 interposed therebetween. That is, the plurality of application nozzles 1260, the second pretreatment nozzle 1240, and the plurality of application nozzles 1260 may be positioned in a line with respect to the moving direction of the nozzle member 1000.

The pretreatment nozzle 1240 discharges the pretreatment liquid. The pretreatment liquid may be provided as a liquid containing properties close to the treatment liquid among hydrophilic and hydrophobic. If the treatment liquid has a hydrophobic nature, the pretreatment liquid may be provided as a thinner. The pretreatment liquid may increase adhesion between the substrate W and the treatment liquid.

The plurality of application nozzles 1260 discharge the processing liquid. Each application nozzle 1260 discharges the processing liquid at the same flow rate. According to an example, a plurality of coating nozzles 1260 may be provided on one side of the pretreatment nozzle 1240 based on the pretreatment nozzle 1240, and a plurality of coating nozzles 1260 may be provided on the other side of the pretreatment nozzle 1240. The application nozzles 1260 may be symmetrically arranged in the same number on each side of the pretreatment nozzle 1240. Each of the application nozzles 1260 may discharge different types of processing liquids from each other. For example, one of the plurality of coating nozzles 1260 may discharge the processing liquid during the process of processing the single substrate W. FIG. The pretreatment nozzle 1240 has a higher discharge end than the application nozzles 1260. This is to prevent the processing liquid from being scattered and attached to the pretreatment nozzle 1240 while the processing liquid is discharged. For example, the treatment liquid may be a photosensitive liquid.

The controller 1400 controls the liquid supply unit 840 and the substrate support unit 830. The controller controls the rotation driving members 834 and 836 so that the rotational speed of the substrate W varies according to the pretreatment step, the liquid supply step, and the diffusion step. The controller 1400 controls the rotation speed of the substrate W in the liquid supplying step based on the measurement information transmitted from the measuring member. The controller 1400 controls the rotation speed of the substrate W in the liquid supplying step based on the state of the substrate according to the degree of warpage of the substrate W. FIG. According to an example, the controller 1400 may control each nozzle 1260 such that any one of the application nozzles 1260 supplies the photosensitive liquid in the liquid supplying step.

In addition, the controller 1400 may control the moving member 846 to supply the pretreatment liquid and the treatment liquid to the central region of the substrate W. FIG.

Next, a process of processing the substrate W using the above-described apparatus will be described. 13 and 14, the substrate processing method includes a first heat treatment step, a measurement step, an application step, and a second heat treatment step.

In the first heat treatment step, the substrate W is cooled in the first buffer 320. The substrate W conveyed to the first buffer 320 by the index robot 220 is temporarily stored. The substrate W is cooled to a predetermined temperature while being stored.

The measuring step proceeds with or after the first heat treatment step. The degree of warpage is measured by the measuring member 326 while the substrate W is cooled in the first buffer 320 or after the cooling process is completed. The measurement information by the measuring member 326 is a factor in which the rotational speed of the substrate W is changed. When the cooling process and the measurement of the warpage degree of the substrate W are completed, the substrate W is transferred to the resist coating chamber 410 by the coating unit robot 432.

The applying step is a step of forming a photosensitive film on the substrate W by supplying a photosensitive liquid on the substrate W. The application step includes a pretreatment step, a liquid supply step, and a diffusion step. The pretreatment step, the liquid supply step, and the diffusion step proceed sequentially.

In the pretreatment step, the substrate W is rotated at the pretreatment speed. The pretreatment nozzle 1240 supplies the pretreatment liquid onto the substrate W that is rotated at the pretreatment speed. The pretreatment liquid is supplied to the center of the substrate (W). The pretreatment liquid is diffused over the entire area of the substrate W to improve adhesion between the surface of the substrate W and the photosensitive liquid.

When the pretreatment step is completed, the liquid supply step proceeds. In the liquid supply step, the substrate W is rotated at the process speed. The application nozzle 1260 supplies the photosensitive liquid onto the substrate W that is rotated at the process speed. The photosensitive liquid is supplied to the center of the substrate (W). The photoresist is diffused over the entire area of the substrate W to form a photoresist film. The process speed is set differently according to the warpage state of the substrate W. FIG.

15 and 16 are views illustrating a process of processing a substrate in which the center region is convex downward in FIG. 14, and FIGS. 17 and 18 are views illustrating a process of processing a substrate in a state where the central region is convex upward in FIG. 14. The drawings. 15 to 18, the state of the substrate W may include a first state, a second state, and a third state. The first state may be a state in which the central region of the substrate W is convex downward. The second state may be a state in which the central region of the substrate W is convex upward. In a third state, the substrate W may be in a flat state. In the first state, the substrate W is rotated at the first speed V ₁ , in the second state, the substrate W is rotated at the second speed V ₂ , and in the third state, the substrate W is removed. Rotate at 3 speed (V ₃ ). The first speed V ₁ is faster than the third speed V ₃ , and the second speed V ₂ is slower than the third speed V ₃ . For example, the first speed V ₁ is about 100 alpha RPM (RPM) faster than the third speed (V ₃ ), and the second speed (V ₂ ) is about 100 alpha (RPM) faster than the third speed (V ₃ ). May be slower).

In the first state, the processing surface of the substrate W is provided to be inclined downward as it approaches the central region. As a result, when the substrate W is rotated at the same speed as in the third state, a photoresist film having a larger thickness may be formed in the center region than in the edge region. In this embodiment, the first speed V ₁ is rotated at a speed faster than the third speed V ₃ , thereby suppressing formation of a photosensitive liquid film having a large thickness in the center area as compared with the edge area of the substrate W. A uniform photosensitive liquid film can be formed at (W).

On the contrary, in the second state, the processing surface of the substrate W is provided to be inclined downward as the processing surface becomes farther from the central area. As a result, when the substrate W is rotated at the same speed V ₃ as in the third state, a photosensitive liquid film having a large thickness may be formed in the edge region of the substrate W as compared with the central region. In this embodiment, the second speed V ₂ is rotated at a slower speed than the third speed V ₃ , thereby suppressing formation of a photosensitive liquid film having a large thickness in the edge region compared to the center region of the substrate W, thereby preventing the substrate from being formed. A uniform photosensitive liquid film can be formed at (W).

In addition, the first speed V ₁ and the second speed V ₂ may vary depending on the degree of warpage of the substrate W. FIG. The greater the degree of bending of the substrate W in the first state, the greater the first speed V ₁ may be provided. On the contrary, the larger the degree of warpage of the substrate W in the second state, the larger the second speed V ₂ may be provided.

When the liquid supply step is completed, the diffusion step is performed. In the diffusion step, the photosensitive liquid is diffused to be uniformly applied to the entire area of the substrate (W). In the diffusion step, the substrate W is rotated at the diffusion speed. For example, the diffusion step may be faster than the process speed.

When the diffusion step is completed, the photoresist film is dried for a predetermined time, and then the second heat treatment step is performed. In the second heat treatment step, the substrate W is baked. In the second heat treatment step, the substrate W is thermally treated by the cooling plate 421 and the heating plate 422 described later.

In the above-described embodiment has been described that the measuring step is performed in the first buffer (320). However, the measuring step is not limited to the first buffer 320 and may be variously applied before the applying step. For example, the measuring step may be performed while the substrate W is transferred from the first buffer 320 to the resist coating chamber 410 by the applicator robot 432. The measuring step may be performed on the substrate W placed on the applicator robot 432. The measuring member 326 may be installed in the applicator robot 432 to measure the degree of warpage of the substrate W. FIG.

Optionally, the measuring step can proceed in the cooling plate 421 of the bake chamber 420.

In addition, in the above-mentioned embodiment, it demonstrated that in the liquid application | coating process of the board | substrate W, rotation speed is adjusted differently according to the state of the board | substrate W with respect to the degree of curvature of the board | substrate W. However, the present embodiment is not limited to the adjustment of the rotational speed to the liquid coating process, it can be variously applied to the process of the liquid treatment of the substrate W to be rotated. For example, the liquid treatment process of the substrate W may include a cleaning process of cleaning the substrate W, an etching process of etching the substrate W, and a developing process of developing the substrate W.

3 to 6 again, the bake chamber 420 heat-treats the substrate (W). For example, the bake chambers 420 may be a prebake process or a photoresist that heats the substrate W to a predetermined temperature and removes organic matter or moisture from the surface of the substrate W before applying the photoresist. A soft bake process or the like performed after coating on W) is performed, and a cooling process for cooling the substrate W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with cooling means 423 such as cooling water or thermoelectric elements. The heating plate 422 is also provided with heating means 424 such as hot wires or thermoelectric elements. The cooling plate 421 and the heating plate 422 may be provided in one bake chamber 420, respectively. Optionally, some of the baking chambers 420 may have only a cooling plate 421 and others may have only a heating plate 422.

The developing module 402 is a developing process of removing a part of the photoresist by supplying a developing solution to obtain a pattern on the substrate W, and a heat treatment process such as heating and cooling performed on the substrate W before and after the developing process. It includes. The developing module 402 has a developing chamber 460, a baking chamber 470, and a conveying chamber 480. The developing chamber 460, the baking chamber 470, and the conveying chamber 480 are sequentially disposed along the second direction 14. Therefore, the developing chamber 460 and the baking chamber 470 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 may be provided, and a plurality of developing chambers 460 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six developing chambers 460 are provided is shown. A plurality of baking chambers 470 may be provided in the first direction 12 and the third direction 16, respectively. In the figure, an example in which six bake chambers 470 are provided is shown. However, the baking chamber 470 may alternatively be provided in larger numbers.

The transfer chamber 480 is positioned side by side in the first direction 12 with the second buffer 330 of the first buffer module 300. The developer robot 482 and the guide rail 483 are positioned in the transfer chamber 480. The transfer chamber 480 has a generally rectangular shape. The developing unit robot 482 includes the bake chambers 470, the developing chambers 460, the second buffer 330 and the cooling chamber 350 of the first buffer module 300, and the second buffer module 500. The substrate W is transferred between the second cooling chambers 540. The guide rail 483 is disposed such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing unit robot 482 to linearly move in the first direction 12. The developing unit robot 482 has a hand 484, an arm 485, a support 486, and a base 487. The hand 484 is fixedly mounted to the arm 485. Arm 485 is provided in a flexible structure to allow hand 484 to move in the horizontal direction. The support 486 is provided such that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 so as to be linearly movable in the third direction 16 along the support 486. The support 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The developing chambers 460 all have the same structure. However, the types of the developer used in each of the developing chambers 460 may be different from each other. The developing chamber 460 removes the light irradiated region of the photoresist on the substrate W. At this time, the area irradiated with light in the protective film is also removed. Depending on the kind of photoresist that is optionally used, only the regions of the photoresist and the protective film to which light is not irradiated may be removed.

The developing chamber 460 has a container 461, a support plate 462, and a nozzle 463. The container 461 has a cup shape with an open top. The support plate 462 is located in the container 461 and supports the substrate W. As shown in FIG. The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tubular shape and can supply the developer to the center of the substrate W. FIG. Optionally, the nozzle 463 has a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided as a slit. In addition, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developing solution is supplied.

The bake chamber 470 heat-treats the substrate (W). For example, the bake chambers 470 are heated after each bake process and a hard bake process for heating the substrate W after the developing process is performed and a post bake process for heating the substrate W before the developing process is performed. A cooling process for cooling the finished substrate W is performed. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with cooling means 473, such as cooling water or thermoelectric elements. Alternatively, the heating plate 472 is provided with heating means 474, such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may each be provided in one bake chamber 470. Optionally, some of the baking chambers 470 may have only a cooling plate 471 and others may have only a heating plate 472.

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the developing module 402 may have the same chamber arrangement when viewed from the top.

The second buffer module 500 is provided as a passage through which the substrate W is transported between the application and development module 400 and the pre-exposure processing module 600. In addition, the second buffer module 500 performs a predetermined process on the substrate W, such as a cooling process or an edge exposure process. The second buffer module 500 controls the frame 510, the buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560. Have The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located in the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the developing module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged along the third direction 16. When viewed from the top, the buffer 520 is disposed along the transfer chamber 430 and the first direction 12 of the application module 401. The edge exposure chamber 550 is disposed to be spaced apart from the buffer 520 or the first cooling chamber 530 by a predetermined distance in the second direction 14.

The second buffer robot 560 transports the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. The second buffer robot 560 is located between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W on which the process is performed in the application module 401. The first cooling chamber 530 cools the substrate W on which the process is performed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes an edge of the substrates W on which the cooling process is performed in the first cooling chamber 530. The buffer 520 temporarily stores the substrate W before the substrates W having been processed in the edge exposure chamber 550 are transferred to the pretreatment module 601 described later. The second cooling chamber 540 cools the substrates W before the substrates W having been processed in the post-processing module 602, which will be described later, are transferred to the developing module 402. The second buffer module 500 may further have a buffer added to a height corresponding to the developing module 402. In this case, the substrates W processed in the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402.

When the exposure apparatus 900 performs the liquid immersion exposure process, the exposure before and after processing module 600 may process a process of applying a protective film that protects the photoresist film applied to the substrate W during the liquid immersion exposure. In addition, the pre and post-exposure processing module 600 may perform a process of cleaning the substrate W after the exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre-exposure treatment module 600 may process the post-exposure bake process.

The pre- and post-exposure processing module 600 includes a pretreatment module 601 and a post-processing module 602. The pretreatment module 601 performs a process of processing the substrate W before performing the exposure process, and the post-processing module 602 performs a process of processing the substrate W after the exposure process. The pretreatment module 601 and the aftertreatment module 602 are arranged to partition into one another. In one example, the pretreatment module 601 is located on top of the aftertreatment module 602. The pretreatment module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film applying chamber 610, a baking chamber 620, and a transfer chamber 630. The protective film applying chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. Therefore, the protective film applying chamber 610 and the baking chamber 620 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 630 interposed therebetween. A plurality of protective film applying chambers 610 may be provided and disposed along the third direction 16 to layer each other. Optionally, a plurality of protective film applying chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of baking chambers 620 may be provided and disposed along the third direction 16 to layer each other. Optionally, a plurality of baking chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned side by side in the first direction 12 with the first cooling chamber 530 of the second buffer module 500. The pretreatment robot 632 is located in the transfer chamber 630. The transfer chamber 630 has a generally square or rectangular shape. The pretreatment robot 632 is disposed between the protective coating chambers 610, the baking chambers 620, the buffer 520 of the second buffer module 500, and the first buffer 720 of the interface module 700, which will be described later. The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. Arm 634 is provided in a stretchable and rotatable structure. The arm 634 is coupled to the support 635 to be linearly movable in the third direction 16 along the support 635.

The protective film applying chamber 610 applies a protective film on the substrate W to protect the resist film during the liquid immersion exposure. The protective coating chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with an open top. The support plate 612 is located in the housing 611 and supports the substrate W. As shown in FIG. The support plate 612 is provided to be rotatable. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the support plate 612. The nozzle 613 has a circular tubular shape and can supply a protective liquid to the center of the substrate W. As shown in FIG. Optionally, the nozzle 613 has a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided as a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. As the protective liquid, a material having a low affinity with the photoresist and water may be used. For example, the protective liquid may contain a fluorine-based solvent. The protective film applying chamber 610 rotates the substrate W placed on the support plate 612 and supplies the protective liquid to the center area of the substrate W. FIG.

The baking chamber 620 heat-treats the substrate W on which the protective film is applied. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with cooling means 623, such as cooling water or thermoelectric elements. Alternatively, the heating plate 622 is provided with heating means 624 such as hot wire or thermoelectric element. The heating plate 622 and the cooling plate 621 may each be provided in one bake chamber 620. Optionally, some of the bake chambers 620 may have only a heating plate 622 and others may have only a cooling plate 621.

The aftertreatment module 602 has a cleaning chamber 660, a post exposure bake chamber 670, and a transfer chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Therefore, the cleaning chamber 660 and the post-exposure bake chamber 670 are positioned to be spaced apart from each other in the second direction 14 with the transfer chamber 680 interposed therebetween. The cleaning chamber 660 may be provided in plural and may be disposed along the third direction 16 to layer each other. Optionally, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 670 may be provided after the exposure, and may be disposed along the third direction 16 to layer each other. Optionally, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 when viewed from the top. The transfer chamber 680 has a generally square or rectangular shape. The post-processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 includes cleaning chambers 660, post-exposure bake chambers 670, a second cooling chamber 540 of the second buffer module 500, and a second of the interface module 700 described below. The substrate W is transported between the buffers 730. The post-processing robot 682 provided to the post-processing module 602 may be provided in the same structure as the pre-processing robot 632 provided to the pre-processing module 601.

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. As shown in FIG. The support plate 662 is provided to be rotatable. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the center region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotated, the nozzle 663 may linearly or rotationally move from the center region of the substrate W to the edge region.

The post-exposure bake chamber 670 heats the substrate W on which the exposure process is performed using ultraviolet rays. The post-exposure bake process heats the substrate W to amplify an acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with heating means 674, such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with cooling means 673, such as cooling water or thermoelectric elements. In addition, a bake chamber may optionally be provided with only the cooling plate 671.

As described above, the pretreatment module 601 and the post-treatment module 602 are provided to be completely separated from each other in the pre- and post-exposure processing module 600. In addition, the transfer chamber 630 of the pretreatment module 601 and the transfer chamber 680 of the post-treatment module 602 may be provided in the same size so as to completely overlap each other when viewed from the top. In addition, the protective film applying chamber 610 and the cleaning chamber 660 may be provided in the same size to each other when completely overlapping each other when viewed from the top. In addition, the bake chamber 620 and the post-exposure bake chamber 670 may be provided in the same size, so as to completely overlap each other when viewed from the top.

The interface module 700 transfers the substrate W between the pre-exposure processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located in the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and disposed to be stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is located at a height corresponding to the pretreatment module 601, and the second buffer 730 is disposed at a height corresponding to the post processing module 602. When viewed from the top, the first buffer 720 is arranged in a line along the transfer chamber 630 and the first direction 12 of the pretreatment module 601, and the second buffer 730 is the post-processing module 602. Are arranged to be arranged in a line along the conveyance chamber 630 and the first direction 12.

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 transports the substrate W between the first buffer 720, the second buffer 730, and the exposure apparatus 900. The interface robot 740 has a structure generally similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the pretreatment module 601 before they are moved to the exposure apparatus 900. The second buffer 730 temporarily stores the substrates W processed in the exposure apparatus 900 before moving to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed in the housing 721 and are spaced apart from each other along the third direction 16. One support W is placed on each support 722. The housing 721 is a direction and pretreatment robot provided with an interface robot 740 so that the interface robot 740 and the pretreatment robot 632 can carry or unload the substrate W into the support 722 into the housing 721. 632 has an opening (not shown) in the direction provided. The second buffer 730 has a structure generally similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has openings (not shown) in the direction in which the interface robot 740 is provided and in the direction in which the post-processing robot 682 is provided. The interface module may be provided with only the buffers and the robot as described above without providing a chamber for performing a predetermined process on the substrate W.

Next, an example of performing the process using the substrate processing equipment 1 described above will be described.

The cassette 20 in which the substrates W are accommodated is placed on the mounting table 120 of the load port 100. The door of the cassette 20 is opened by the door opener. The index robot 220 takes out the substrate W from the cassette 20 and carries it to the second buffer 330.

The first buffer robot 360 carries the substrate W stored in the second buffer 330 to the first buffer 320. The applicator robot 432 removes the substrate W from the first buffer 320 and transports the substrate W to the bake chamber 420 of the applicator module 401. The bake chamber 420 sequentially performs the prebaking and cooling processes. The applicator robot 432 removes the substrate W from the bake chamber 420 and transfers the substrate W to the resist application chamber 410. The resist coating chamber 410 applies a photo resist on the substrate W. As shown in FIG. After the photoresist is applied on the substrate W, the application robot 432 transfers the substrate W from the resist application chamber 410 to the bake chamber 420. The bake chamber 420 performs a soft bake process on the substrate (W).

The applicator robot 432 removes the substrate W from the bake chamber 420 and transports the substrate W to the first cooling chamber 530 of the second buffer module 500. A cooling process is performed on the substrate W in the first cooling chamber 530. The substrate W on which the process is performed in the first cooling chamber 530 is transferred to the edge exposure chamber 550 by the second buffer robot 560. The edge exposure chamber 550 performs a process of exposing the edge region of the substrate W. The substrate W, which has been processed in the edge exposure chamber 550, is transferred to the buffer 520 by the second buffer robot 560.

The pretreatment robot 632 removes the substrate W from the buffer 520 and transports the substrate W to the protective film applying chamber 610 of the pretreatment module 601. The protective film applying chamber 610 applies a protective film on the substrate (W). The pretreatment robot 632 then transfers the substrate W from the passivation coating chamber 610 to the bake chamber 620. The bake chamber 620 performs heat treatment such as heating and cooling on the substrate W.

The pretreatment robot 632 removes the substrate W from the baking chamber 620 and transfers the substrate W to the first buffer 720 of the interface module 700. The interface robot 740 transports the substrate W from the first buffer 720 to the exposure apparatus 900. The exposure apparatus 900 performs an exposure process, for example, a liquid immersion exposure process, on the processing surface of the substrate W. FIG. When the exposure process is completed on the substrate W in the exposure apparatus 900, the interface robot 740 transports the substrate W to the second buffer 730 in the exposure apparatus 900.

The post-processing robot 682 removes the substrate W from the second buffer 730 and transports the substrate W to the cleaning chamber 660 of the post-processing module 602. The cleaning chamber 660 supplies a cleaning liquid to the surface of the substrate W to perform a cleaning process. After the cleaning of the substrate W using the cleaning liquid is completed, the post-processing robot 682 immediately removes the substrate W from the cleaning chamber 660 and transports the substrate W to the post-exposure bake chamber 670. In the heating plate 672 of the bake chamber 670 after the exposure, the cleaning liquid adhered to the substrate W is removed by heating the substrate W, and at the same time, the acid generated in the photoresist is amplified, thereby The property change of the resist is completed. The post-processing robot 682 transfers the substrate W from the post-exposure bake chamber 670 to the second cooling chamber 540 of the second buffer module 500. Cooling of the substrate W is performed in the second cooling chamber 540.

The developing unit robot 482 removes the substrate W from the second cooling chamber 540 and transfers the substrate W to the bake chamber 470 of the developing module 402. The bake chamber 470 sequentially performs the post bake and cooling process. The developer robot 482 removes the substrate W from the bake chamber 470 and transports the substrate W to the developing chamber 460. The developing chamber 460 supplies a developing solution onto the substrate W to perform a developing process. The developing unit robot 482 then transfers the substrate W from the developing chamber 460 to the bake chamber 470. The bake chamber 470 performs a hard bake process on the substrate (W).

The developing unit robot 482 removes the substrate W from the bake chamber 470 and transports the substrate W to the cooling chamber 350 of the first buffer module 300. The cooling chamber 350 performs a process of cooling the substrate (W). The index robot 360 carries the substrate W from the cooling chamber 350 to the cassette 20. In contrast, the developing unit robot 482 removes the substrate W from the bake chamber 470 and transports the substrate W to the second buffer 330 of the first buffer module 300, and then the cassette ( 20).

V ₁ : 1st speed V ₂ : 2nd speed
V ₃ : 3rd speed 322: buffer plate
326: measuring member 1400: controller

Claims (10)

In the method of processing a substrate,
Supplying a processing liquid on the substrate to be rotated to form a liquid film on the substrate,
The rotation speed of the said board | substrate is set differently according to the state of the said board | substrate with respect to a curvature degree. The method of claim 1,
The state of the substrate includes a first state in which a central area of the substrate is convex downward;
The greater the warpage of the substrate in the first state, the greater the rotation speed is provided. The method of claim 1,
The state of the substrate includes a second state in which a central region of the substrate is convex upward;
The greater the curvature of the substrate in the second state, the smaller the rotational speed is provided. The method of claim 1,
The state of the substrate,
A first state in which the central region of the substrate is convex downward;
The central region of the substrate comprises a second convex upward,
In the first state, the rotation speed of the substrate is set to the first speed,
In the second state, the rotation speed of the substrate is set to a second speed.
And the first speed is faster than the second speed. In the method of processing a substrate,
A first thermal treatment step of thermally treating the substrate;
An application step of applying a treatment liquid onto the substrate by supplying the treatment liquid to the substrate after the first heat treatment step;
A second heat treatment step of thermally treating the substrate after the applying step,
The rotation speed of the said board | substrate in the said apply | coating step is set differently according to the state of the said board | substrate with respect to the degree of curvature of the said board | substrate. The method of claim 5,
The state of the substrate includes a first state in which a central area of the substrate is convex downward;
The greater the warpage of the substrate in the first state, the greater the rotation speed is provided. The method of claim 5,
The state of the substrate includes a second state in which a central region of the substrate is convex upward;
The greater the curvature of the substrate in the second state, the smaller the rotational speed is provided. In the method of processing a substrate,
Process the substrate by supplying a treatment liquid on the substrate to be rotated,
The rotation speed of the said board | substrate while supplying the said process liquid is set differently according to the state of the said board | substrate with respect to the degree of curvature of the said board | substrate. The method of claim 8,
The state of the substrate includes a first state in which a central area of the substrate is convex downward;
The greater the warpage of the substrate in the first state, the greater the rotation speed is provided. The method of claim 8,
The state of the substrate includes a second state in which a central region of the substrate is convex upward;
The greater the curvature of the substrate in the second state, the smaller the rotational speed is provided.

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