KR20190094723A - Semiconductor device package and light emitting device including the same - Google Patents

Abstract

Disclosed are a semiconductor element package with a small size and a light emitting device including the same. According to an embodiment of the present invention, the semiconductor element package comprises: a body including a first cavity; and a semiconductor element arranged in the first cavity. The first cavity includes: a first surface inclined to widen an area as the first cavity moves away from the semiconductor element; and a plurality of second surfaces perpendicular to an upper surface of the semiconductor element. The body includes: a first corner unit arranged in a region where a first outer surface and a third outer surface facing each other, a second outer surface and a fourth outer surface facing each other, and the first outer surface and the second outer surface meet each other; a second corner unit arranged in a region where the second outer surface and the third outer surface meet each other; a third corner unit arranged in a region where the third outer surface and the fourth outer surface meet each other; and a fourth corner unit arranged in a region where the fourth outer surface and the first outer side surface meet each other. The plurality of second surfaces are arranged between the first corner unit and the second corner unit, between the second corner unit and the third corner unit, between the third corner unit and the fourth corner unit, and between the fourth corner unit and the first corner unit, respectively.

Description

Semiconductor device package and light emitting device including the same {SEMICONDUCTOR DEVICE PACKAGE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

Embodiments relate to a semiconductor device package and a light emitting device including the same.

A semiconductor device including a compound such as GaN, AlGaN, etc. has many advantages, such as having a wide and easy-to-adjust band gap energy, and can be used in various ways as a light emitting device, a light receiving device, and various diodes.

Particularly, light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or Group 2-6 compound semiconductors have been developed through the development of thin film growth technology and device materials. Various colors such as blue and ultraviolet light can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent lifespan, and fast response speed compared to conventional light sources such as fluorescent and incandescent lamps can be realized. It has the advantages of safety, environmental friendliness.

Such a semiconductor device may be applied as a transmission module of an optical communication means, a backlight of a liquid crystal display (LCD) display device, a light source of an illumination device, a curing machine, and an exposure machine.

The exposure machine is a device that transfers a desired pattern to the photosensitive film by placing a mask on which a desired pattern is formed on a photo-resist coated sample, which is a material reacting with light, and irradiating ultraviolet rays.

For example, semiconductor devices, circuit boards (PCBs), and display panels, which are embedded as main components of electronic devices, may form fine circuit patterns using photolithography techniques in an exposure process.

A mercury ultraviolet lamp, a halogen lamp, or the like may be used as a light source of the ultraviolet exposure apparatus, but these lamps have a problem of low efficiency and high cost.

The embodiment provides a small semiconductor device package.

The embodiment provides a semiconductor device package that can be easily mounted with a lens.

The embodiment provides a semiconductor device package that can be densely arranged.

The embodiment provides a semiconductor device package that is easy to manufacture.

The problem to be solved in the examples is not limited thereto, and the object or effect that can be grasped from the solution means or the embodiment described below will also be included.

According to one or more exemplary embodiments, a semiconductor device package includes: a body including a first cavity; And a semiconductor device disposed inside the first cavity, wherein the first cavity has a first surface inclined so that an area thereof becomes wider as it moves away from the semiconductor device, and a plurality of first materials perpendicular to an upper surface of the semiconductor device. The body includes two surfaces, and the body is disposed in an area where the first outer surface and the third outer surface facing each other, the second outer surface and the fourth outer surface facing each other, and the first outer surface and the second outer surface meet each other. A first edge portion disposed in a region where the second outer side surface and the third outer side meet, a third edge portion disposed in an area where the third outer side and the fourth outer side meet, and the A fourth edge portion disposed in an area where a fourth outer surface and the first outer surface meet each other, the plurality of second surfaces being between the first edge portion and the second edge portion, and the second edge portion and the third edge portion. Between corners, between the third and fourth corners, and They are respectively disposed between the fourth group the edge portion of the first edge portion.

It may include a substrate on which the semiconductor device is disposed.

The body may include a second cavity connected to the first cavity and penetrating the lower surface of the body, and the side surface of the second cavity may have a third surface perpendicular to one surface of the substrate.

The vertical widths of the plurality of second surfaces may become smaller as they approach the first to fourth corners.

The first direction width of the third surface may increase as the first to fourth corners are closer to the first to fourth corners.

The first boundary between the first surface and the second surface may have a curve.

The second boundary between the third surface and the first surface may have a curve.

The curves of the first boundary and the second boundary may have the same curvature.

The first surface may extend to the first to fourth corner portions to partition the plurality of second surfaces.

The second cavity may have a square shape.

The second cavity includes a first side and a third side facing each other, a second side and a fourth side facing each other, and the length of the first side and the third side is greater than the second side and the fourth side. Longer, the vertical width of the second side surface and the fourth side surface may be greater than the vertical width of the first side surface and the third side surface.

The vertical widths of the plurality of second surfaces may be smaller than the vertical widths of the first surfaces.

The ratio of the vertical widths of the plurality of second surfaces may be 1: 1.2 to 1: 1.8.

The substrate includes a first electrode on which the semiconductor device is disposed, a second electrode spaced apart from the first electrode, and a first protrusion disposed along an edge of the substrate, and the second cavity is formed on the other surface of the body. A concave portion surrounding the concave portion is disposed, and the concave portion may be disposed on the first protrusion.

It may include a light transmitting member disposed on the body to cover the cavity.

According to an embodiment of the present invention, the size of the semiconductor device package can be reduced.

In addition, lens coupling to the semiconductor device package may be facilitated.

In addition, compact arrangement of semiconductor device packages is possible.

In addition, fabrication of a semiconductor device package may be facilitated.

Various and advantageous advantages and effects of the present invention are not limited to the above description, and will be more readily understood in the course of describing specific embodiments of the present invention.

1 is a conceptual diagram of a semiconductor device package according to a first embodiment of the present invention;
2 is an exploded perspective view of the semiconductor device package according to the first embodiment of the present invention,
3 is an exploded perspective view of a semiconductor device package according to a first embodiment of the present invention as seen from below;
4 is a view showing the cavity of FIG.
5 is a cross-sectional view along the AA direction of FIG. 1,
6 is a cross-sectional view taken along the BB direction of FIG. 4;
7 is a conceptual diagram of a light emitting device according to an embodiment of the present invention;
8 is an enlarged view of a portion A of FIG. 7;
9 is a view illustrating a connection between a plurality of semiconductor device packages and lead electrodes;
10 is a perspective view of FIG. 1 viewed from another direction;
11 is a bottom view of FIG. 1,
12 is a perspective view of a semiconductor device package according to a second embodiment of the present disclosure;
FIG. 13 is an exploded perspective view of FIG. 12;
14 is a view showing a coupling relationship between the body and the substrate of FIG. 13,
15 is a cross-sectional view taken along the direction CC of FIG. 12;
16 is a sectional view taken along the line DD of FIG. 13,
17 is a conceptual diagram of a semiconductor device package according to a third embodiment of the present disclosure;
FIG. 18 is a plan view of FIG. 17;
19 is a first modification of FIG. 18,
20 is a second modification of FIG. 18,
21 is a cross-sectional view of a semiconductor device package according to a fourth embodiment of the present disclosure;
FIG. 22 is a partially exploded perspective view of a semiconductor device package according to a fourth embodiment of the present disclosure;
23 is a plan view of a semiconductor device package according to a fourth embodiment of the present invention.

The embodiments may be modified in other forms or in various embodiments, and the scope of the present invention is not limited to the embodiments described below.

Although matters described in a specific embodiment are not described in other embodiments, it may be understood as descriptions related to other embodiments unless there is a description that is contrary to or contradictory to the matters in other embodiments.

For example, if a feature is described for component A in a particular embodiment and a feature for component B in another embodiment, a description that is contrary or contradictory, even if the embodiments in which configuration A and configuration B are combined are not explicitly described. Unless otherwise, it should be understood to fall within the scope of the present invention.

In the description of the embodiment, when one element is described as being formed "on or under" of another element, it is on (up) or down (on). or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as "on" or "under", it may include the meaning of the downward direction as well as the upward direction based on one element.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention.

1 is a conceptual diagram of a semiconductor device package according to a first embodiment of the present invention, FIG. 2 is an exploded perspective view of the semiconductor device package according to the first embodiment of the present invention, and FIG. 3 is a first embodiment of the present invention. An exploded perspective view of a semiconductor device package according to an example seen from below.

1 to 3, a semiconductor device package according to an embodiment may include a substrate 200, a body 100 disposed on the substrate 200, and a semiconductor device 400 disposed inside the body 100. , And a light transmitting member 300 disposed above the body 100.

The substrate 200 may include an AlN material. However, the present invention is not limited thereto, and various materials capable of reflecting ultraviolet light may be selected. In exemplary embodiments, the substrate 200 may include aluminum oxide (Al ₂ O ₃ ). The substrate 200 may have a polygonal shape, for example, a rectangular shape.

The first electrode 230 and the second electrode 220 may be disposed on one surface of the substrate 200. The first electrode 230 and the second electrode 220 are Ti, Ru, Rh, Ir, Mg, W, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys. For example, the first electrode 230 and the second electrode 220 may have a stacked structure in the order of W / Ti / Ni / Cu / Pd / Au.

The semiconductor device 400 may be disposed on the second electrode 220 and may be electrically connected to the first electrode 230 by a wire (not shown). However, the present disclosure is not limited thereto, and the semiconductor device 400 may be electrically connected to the first electrode 230 and the second electrode 220 by a wire. In addition, the semiconductor device 400 may be implemented as a flip chip and disposed on the first electrode 230 and the second electrode 220. That is, the semiconductor device 400 may be electrically connected to the first electrode 230 and the second electrode 220 in various ways according to the electrode structure.

The semiconductor device 400 may output light in an ultraviolet wavelength band. For example, the semiconductor device 400 may output light (UV-A) in the near ultraviolet wavelength band, may output light (UV-B) in the far ultraviolet wavelength band, or light (UV-C) in the deep ultraviolet wavelength band. You can also print The wavelength range may be determined by the semiconductor structure included in the semiconductor device 400.

The semiconductor structure (not shown) may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer.

The first conductive semiconductor layer may be an n-type semiconductor layer, and the second conductive semiconductor layer may be a p-type semiconductor layer. However, the present invention is not limited thereto, and the first conductive semiconductor layer may be a p-type semiconductor layer, and the second conductive semiconductor layer may be an n-type semiconductor layer.

The active layer may emit light by luminescent recombination of the carrier injected in the first conductive semiconductor layer and the carrier injected in the second conductive semiconductor layer.

At this time, the wavelength of the light emitted to the bandgap energy magnitude of the active layer can be determined. For example, when the active layer has at least one of a quantum well and a quantum barrier, the wavelength of light to emit light may be determined according to the band gap size of the quantum well.

Light emitting from the quantum wells may be induced emission or spontaneous emission. In the case of induced emission, the wavelength of light to be emitted is greater in intensity at a specific wavelength, and the phase of light to be emitted may be the same. However, in the case of spontaneous light emission, the wavelength of light to be emitted may vary, and its intensity may vary according to the wavelength of light. Can be. At this time, the wavelength of the light to emit light can be defined as the wavelength of the light having the largest intensity of light compared to other wavelengths by measuring the intensity relative to the wavelength. The active layer may be an n-type dopant and / or a p-type semiconductor layer, but is not limited thereto and may be an intrinsic semiconductor layer.

The semiconductor structure may be composed of a compound semiconductor based on AlGaN, GaN, GaAs, GaP, and the like. In particular, when the semiconductor structure is composed of a GaN-based compound semiconductor, and the semiconductor device 400 emits ultraviolet rays, the wavelength of light emitted by the Al composition (or content) of the semiconductor structure may be determined. For example, when the active layer has a quantum well layer composed of AlGaN or GaN, the band gap of the quantum well layer may be variously adjusted according to the composition (or content) of Al, wherein the band gap of the quantum well layer may be Depending on the size, the semiconductor structure may emit ultraviolet light.

For example, light (UV-A) in the near ultraviolet wavelength range may have a main peak in the wavelength range of 320 nm to 420 nm, and light (UV-B) in the far ultraviolet wavelength range may have a main peak in the wavelength range of 280 nm to 320 nm. The light of the deep ultraviolet wavelength band (UV-C) may have a main peak in the wavelength range of 100 nm to 280 nm. However, the semiconductor device 400 may be manufactured to output light in a wavelength band required for exposure.

The body 100 may be disposed on the substrate 200. The body 100 may be fixed on the substrate 200 by an adhesive (not shown). By way of example, the adhesive may be solder or epoxy. However, the present invention is not limited thereto, and various adhesives capable of adhering a metal material and / or a semiconductor material may be selected.

The body 100 may include an upper surface (one surface, 131) and a lower surface (the other surface), and a plurality of outer surfaces 121, 122, 123, and 124 disposed between the upper surface and the lower surface. The plurality of outer surfaces include a first outer surface 121 and a third outer surface 123 facing each other, a second outer surface 122 and a fourth outer surface 124 facing each other, and a first outer surface 121 facing each other. First edge portion 127a disposed in an area where the second outer surface 122 and the second outer surface 122 meet, and a second edge portion 127b disposed in an area where the second outer surface 122 and the third outer surface 123 meet. And a third edge portion 127c disposed in an area where the third outer surface 123 and the fourth outer surface 124 meet, and an area where the fourth outer surface 124 and the first outer surface 121 meet. It may include a fourth corner portion (127d) disposed. The body 100 may be polygonal in shape, for example rectangular in shape.

The body 100 may include a cavity 110 penetrating the upper surface 131 and the lower surface. The inner surface of the cavity 110 may reflect ultraviolet light. For example, the body 100 may be made of AlN or aluminum oxide as a whole to reflect ultraviolet light, or a separate reflective layer may be disposed in the cavity 110.

The cavity 110 penetrates the first cavity 110a having the inclined first surface 111, the second surface 112 perpendicular to the one surface 210 of the substrate 200, and the lower surface of the body. It may include a second cavity (110b) that exposes (400). The second cavity 110b may have a rectangular shape, but is not necessarily limited thereto. The shape of the cavity 110 will be described later.

The body 100 may include a plurality of protrusions 125a, 125b, 125c, and 125d protruding from the corner portions facing in the diagonal direction among the first to fourth corner portions 127a, 127b, 127c, and 127d.

For example, the plurality of protrusions 125a, 125b, 125c, and 125d may include the first protrusion 125a protruding from the first edge portion 127a, the second protrusion 125b protruding from the second edge portion 127b, and the like. The third protrusion 125c protruding from the third edge portion 127c and the fourth protrusion 125d protruding from the fourth protrusion 125d may be included.

However, the present invention is not limited thereto, and the plurality of protrusions 125a and 125c may protrude from the first protrusion 125a protruding from the first edge portion 127a and the third protrusion 125c protruding from the third edge portion 127c. May contain only.

The first to fourth protrusions 125a, 125b, 125c, and 125d may have a polygonal pillar shape. For example, the first to fourth protrusions 125a, 125b, 125c, and 125d may have a triangular pillar shape, but are not limited thereto and may have a square pillar and a pentagonal pillar shape.

The light transmitting member 300 may be disposed on the body 100 to control the light emitted from the semiconductor device 400. The light transmitting member 300 may include a lens unit 320. The lens unit 320 may control the light emitted from the semiconductor device 400 to be uniformly irradiated. The lens unit 320 is illustrated as having a dome shape, but is not necessarily limited thereto, and may have various curvatures to uniformly control light.

The light transmitting member 300 includes a first side surface 311 and a third side surface 313 facing each other, a second side surface 312 and a fourth side surface 314 facing each other, and a first side surface 311 and a second side surface. The first edge portion 316 disposed between the 312, the second edge portion 317, the third side surface 313 and the fourth side surface disposed between the second side surface 312 and the third side surface 313. And a third edge portion 318 disposed between 314 and a fourth edge portion 315 disposed between the fourth side surface 314 and the first side surface 311. The light transmitting member 300 may have a polygonal shape, for example, a rectangular shape.

Corner portions 315, 316, 317, and 318 of the light transmitting member 300 may include coupling portions that couple with the plurality of protrusions 125a, 125b, 125c, and 125d. The coupling part of the light transmitting member 300 may have a shape corresponding to the shape of the protrusions 125a, 125b, 125c, and 125d of the body 100. In the present embodiment, the protrusions 125a, 125b, 125c, and 125d of the body 100 may have a triangular upper surface. Therefore, the coupling portion of the light transmitting member 300 may have a flat surface. Accordingly, the light transmitting member 300 may be fixed by inserting the corners 315, 316, 317, and 318 into the first to fourth protrusions 125a, 125b, 125c, and 125d.

The light transmitting member 300 may be fixed to the upper surface 131 of the body 100 by an adhesive (not shown). The adhesive may be a UV curable resin, but is not limited thereto.

The light transmitting member 300 is not particularly limited as long as it is a material capable of transmitting light in the ultraviolet wavelength band. For example, the light transmitting member 300 may use quartz or glass, but is not limited thereto and may include an optical material having a high UV wavelength transmittance.

4 is a view illustrating the cavity of FIG. 1, FIG. 5 is a cross-sectional view taken along the A-A direction of FIG. 1, and FIG. 6 is a cross-sectional view taken along the B-B direction of FIG. 4.

4 to 6, the cavity 110 according to the embodiment includes a first cavity 110a having an inclined first surface 111 and a second surface 112 perpendicular to the substrate 200, and It may include a second cavity (110b) through the lower surface of the body 100 to expose the semiconductor device 400.

The first surface 111 may have a parabolic shape in which the cross-sectional area increases as the distance from the substrate 200 increases. Therefore, the light emitted from the semiconductor device 400 may be upwardly reflected to increase the luminous flux and to have uniform light distribution.

The second surface 112 may be disposed on the first surface 111 and disposed perpendicular to the substrate 200. The second surface 112 may reduce the size of the semiconductor device package. When the first cavity 110a has a parabolic shape as a whole by the first surface 111, a circular cavity having a large diameter R1 is formed, and thus the size of the semiconductor device package must be increased. Therefore, when a plurality of semiconductor device packages are disposed, the density may be reduced.

According to an embodiment, the second surface 112 may be partially formed in the first cavity 110a to reduce the size of the semiconductor device package. That is, the inside of the package may have a parabolic shape while the outside thereof may have a quadrangular shape to densely arrange a plurality of semiconductor device packages.

The ratio H1: H2 of the maximum width in the vertical direction of the first surface 111 and the second surface 112 may be 1: 0.5 to 1: 0.7. If the ratio is greater than 1: 0.5, the second surface 112 may be widened to reduce the size of the semiconductor device package. If the ratio is less than 1: 0.7, the second surface 112 may be too wide to decrease the luminous flux due to total reflection. Problems can be prevented.

The plurality of second surfaces 112 may be disposed between the corner portions 127a, 127b, 127c, and 127d of the body 100, respectively. For example, the plurality of second surfaces 112 may include a space between the first edge portion 127a and the second edge portion 127b, between the second edge portion 127b and the third edge portion 127c, and a third edge portion. It may be disposed between 127c and the fourth edge portion 127d and between the fourth edge portion 127d and the first edge portion 127a, respectively.

In this case, the vertical width H2 of the second surface 112 may become smaller as it approaches the first to fourth edge portions 127a, 127b, 127c, and 127d. Thus, the second surface 112 may have a semicircular shape. When the vertical width H2 of the second surface 112 becomes larger or the same as the first to fourth edge portions 127a, 127b, 127c, and 127d, the first cavity 110a generally has a parabola shape. It may be difficult to have the desired distribution of light distribution. In addition, since the vertical plane becomes wider, the amount of light emitted upwards may be lowered, thereby lowering the luminous flux.

The first surface 111 may extend to an area between the plurality of second surfaces 112. That is, the first surface 111 may extend toward the first to fourth edge portions 127a, 127b, 127c, and 127d to partition the plurality of second surfaces 112.

The second cavity 110b may have a size to expose the semiconductor device 400. For example, the second cavity 110b may have a rectangular shape, but is not limited thereto. The second cavity 110b may have a polygonal shape or a circular shape.

Side surfaces of the second cavity 110b may include a third surface 113 perpendicular to the substrate 200. The third surface 113 may be parallel to the second surface 112. That is, the second surface 112 and the third surface 113 may be surfaces perpendicular to the substrate 200.

The vertical width H3 of the third surface 113 may increase as the first to fourth edge portions 127a, 127b, 127c, and 127d get closer to each other. That is, the width of the second surface 112 becomes smaller as the first to fourth edge portions 127a, 127b, 127c, and 127d become closer, whereas the vertical width H3 of the third surface 113 is determined to be first. As the first to fourth corner portions 127a, 127b, 127c, and 127d become closer, they may become larger. According to such a structure, the shape of the 2nd cavity 110b can be formed in a polygonal shape, and the wire mounting area can be ensured. Therefore, the reliability of the device can be improved.

The first boundary CL1 between the first surface 111 and the second surface 112 has a curve, and the second boundary CL2 between the third surface 113 and the first surface 111 has a curve. Can have. In this case, the curves of the first boundary CL1 and the second boundary CL2 may have the same curvature. According to this configuration, the size of the body 100 can be reduced, and the shape of the cavity 110 can be formed in a polygonal shape to secure a wire mounting area and the like.

The substrate 200 includes a first electrode 230 and a second electrode 220 disposed on one surface, a first pad 240, a second pad 260, and a third pad 250 disposed on a lower surface of the substrate 200. can do. The first pad 240 may be electrically connected to the first electrode 230 by a through electrode, and the second pad 260 may be electrically connected to the second electrode 220 by a through electrode. The third pad 250 disposed between the first pad 240 and the second pad 260 may be a heat radiation pad. The first to third pads 240, 250, and 260 may be made of the same material as the first and second electrodes 220, but are not limited thereto.

The first electrode 230, the second electrode 220, and the first to third pads 240, 250, and 260 are Ti, Ru, Rh, Ir, Mg, W, Zn, Al, In, Ta, Pd, It may be selected from Co, Ni, Si, Ge, Ag and Au and their optional alloys. For example, the first electrode 230, the second electrode 220, and the first to third pads 240, 250, and 260 may have a stacked structure in the order of W / Ti / Ni / Cu / Pd / Au. have.

7 is a conceptual diagram of a light emitting device according to an embodiment of the present invention, FIG. 8 is an enlarged view of a portion A of FIG. 7, FIG. 9 is a view illustrating connection of a plurality of semiconductor device packages and circuit patterns, and FIG. 10 is 1 is a perspective view from another direction, and FIG. 11 is a bottom view of FIG. 1.

Referring to FIG. 7, the light emitting device according to the embodiment may include a stage 30 and light source modules 10 and 20 disposed on the stage 30. The light emitting device according to the embodiment may be a concept including a sterilizing device, a curing device, an exposure device, a lighting device, and a display device and a vehicle lamp. Hereinafter, the light emitting device will be described as an exposure machine.

The exposure object 41 may be disposed on the stage 30, and a mask pattern 42 may be disposed between the exposure object 41 and the light source modules 10 and 20. Accordingly, ultraviolet light may selectively enter the exposure target 41 according to the mask pattern 42. This structure can be applied to all of the structure of the conventional exposure machine.

The light source modules 10 and 20 may include a circuit board 20 and a plurality of semiconductor device packages 10 disposed on the circuit board 20. In the light source modules 10 and 20 of the light emitting device, it may be important that the plurality of semiconductor device packages 10 are arranged as densely as possible. As the distance between the semiconductor device packages is narrower, the luminous flux and illuminance uniformity of the target surface may be improved.

8 and 9, the first lead electrode 21 is electrically connected to the first semiconductor device package 10a, and the second lead electrode 22 is connected to the first semiconductor device package 10a and the fourth. It may be electrically connected to the semiconductor device package 10d.

The third lead electrode 23 may be electrically connected to the fifth semiconductor device package 10e through the first semiconductor device package 10a and the second semiconductor device package 10b. In this case, the third lead electrode 23 may partially overlap the first semiconductor device package 10a and the second semiconductor device package 10b. However, the third lead electrode 23 may be spaced apart from the pads 240, 250, and 260 of the first semiconductor device package 10a and the second semiconductor device package 10b to prevent a short circuit.

That is, in the light source module according to the embodiment, the lead electrodes 21, 22, 23, 24, 25, 26, and 27 may be overlapped between the plurality of semiconductor device packages 10a, 10b, 10c, 10d, 10e, and 10f. Can be. According to such a structure, roughness uniformity can be improved by reducing the space | interval between semiconductor element packages.

The lead electrodes 21, 22, 23, 24, 25, 26, and 27 may be individually connected to the semiconductor device packages 10a, 10b, 10c, 10d, 10e, and 10f, respectively. Therefore, the current value applied to each semiconductor device package can be controlled differently through the lead electrode. For example, the current value applied to the semiconductor device package disposed in the edge regions of the light source modules 10 and 20 may be controlled to be lower. According to this configuration, the current value is controlled to be relatively high in the low illuminance region in the light source module, and the illuminance uniformity can be improved overall by controlling the current value relatively low in the high illuminance region. However, the same current may be applied by connecting common lead electrodes to a plurality of semiconductor device packages in a section in which illuminance is maintained (eg, a central region of the light source module).

10 and 11, the body 100 of the semiconductor device package according to the embodiment may include a lower surface 132 disposed on the substrate 200, and a plurality of side surfaces 121 and 122 perpendicular to the substrate 200. 123, 124, and an inclined surface 126 connecting the plurality of side surfaces 121, 122, 123, and 124 and the lower surface 132. In the embodiment, the plurality of side surfaces 121, 122, 123, and 124 are described as being perpendicular to the substrate 200, but the present disclosure is not limited thereto, and the plurality of side surfaces 121, 122, 123, and 124 may have an inclination. It may be.

The body 100 may be disposed on the substrate 200. In this case, the lower surface 132 of the body 100 may be smaller than the substrate 200. That is, the lower surface 132 of the body 100 may be disposed inside the substrate 200. In contrast, the outer surfaces 121, 122, 123, and 124 of the body 100 may be disposed outside the substrate 200. Therefore, the cross-sectional area of the side surfaces 121, 122, 123, and 124 of the body 100 may be larger than that of the substrate 200.

According to an embodiment, the inclined surface 126 connecting the plurality of outer surfaces 121, 122, 123, and 124 and the lower surface 132 is inclined so that the area becomes narrower as it approaches the substrate 200. Although the 121, 122, 123, and 124 are disposed outside the substrate 200, the bottom surface 132 of the body 100 may be disposed inside the substrate 200. As a result, the plurality of pads 240, 250, and 260 disposed on the substrate 200 may be disposed inside the side surfaces 121, 122, 123, and 124 of the body 100. Therefore, even when the lead electrode of the circuit board 20 partially overlaps the body 100, the lead electrodes of the circuit board 20 may be spaced apart from the pads 240, 250, and 260. Therefore, it is possible to secure the electrical insulation while densely arranging the semiconductor device package.

The ratio of the area of the substrate 200 to the maximum cross-sectional area of the body 100 may be 1: 1.2 to 1: 1.8. The maximum cross-sectional area of the body 100 may be an area formed by the plurality of side surfaces 121, 122, 123, and 124. When the ratio is greater than or equal to 1: 1.2, the area of the substrate 200 may be sufficiently small to electrically insulate the pad of the substrate 200 even when the body 100 and the lead electrode partially overlap. In addition, when the ratio is 1: 1.8 or less, the area of the body 100 may be reduced and be densely arranged.

12 is a perspective view of a semiconductor device package according to a second embodiment of the present disclosure, FIG. 13 is an exploded perspective view of FIG. 12, and FIG. 14 is a view illustrating a coupling relationship between a body and a substrate of FIG. 13.

12 and 13, a semiconductor device package according to an embodiment may include a substrate 200, a body 100 disposed on the substrate 200, and a semiconductor device 400 disposed inside the body 100. , And a light transmitting member 300 disposed above the body 100.

The substrate 200 may include an AlN material. However, the present invention is not limited thereto, and various materials capable of reflecting ultraviolet light may be selected. In exemplary embodiments, the substrate 200 may include aluminum oxide (Al ₂ O ₃ ). The substrate 200 may have a polygonal shape, for example, a rectangular shape.

The first electrode 230 and the second electrode 220 may be disposed on one surface of the substrate 200. The first electrode 230 and the second electrode 220 are Ti, Ru, Rh, Ir, Mg, W, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys. For example, the first electrode 230 and the second electrode 220 may have a stacked structure in the order of W / Ti / Ni / Cu / Pd / Au.

The semiconductor device 400 may be disposed on the second electrode 220 and electrically connected to the first electrode 230 by a wire. However, the present disclosure is not limited thereto, and the semiconductor device 400 may be electrically connected to the first electrode 230 and the second electrode 220 by a wire. In addition, the semiconductor device 400 may be implemented as a flip chip and disposed on the first electrode 230 and the second electrode 220. That is, the semiconductor device 400 may be electrically connected to the first electrode 230 and the second electrode 220 in various ways depending on the electrode structure.

The semiconductor device 400 may output light in an ultraviolet wavelength band. For example, the semiconductor device 400 may output light in the near ultraviolet wavelength band (UV-A), may output light in the far ultraviolet wavelength band (UV-B), or may emit light in the deep ultraviolet wavelength band (UV-A). C) can be output. The wavelength range may be determined by the composition ratio of Al of the semiconductor structure. However, the present invention is not limited thereto, and the semiconductor device 400 may be manufactured to output light in a wavelength band required for exposure.

The body 100 has a first outer surface 121 and a third outer surface 123 facing each other, a second outer surface 122 and a fourth outer surface 124 facing each other, and a first outer surface 121. First corner portion 127a disposed between the second outer surface 122 and the second outer portion 127b disposed between the second outer surface 122 and the third outer surface 123 and the third outer portion. The third edge portion 127c disposed between the side surface 123 and the fourth outer surface 124, and the fourth corner portion 127d disposed between the fourth outer surface 124 and the first outer surface 121. ) May be included. The body 100 may be polygonal in shape, for example rectangular in shape.

The body 100 may include a cavity 110 penetrating the upper and lower surfaces. The inner surface of the cavity 110 may reflect ultraviolet light. For example, the body 100 itself may reflect ultraviolet light, such as AlN aluminum oxide, or a separate reflective layer may be disposed in the cavity 110.

The cavity 110 includes a first cavity 110a having an inclined first surface 111 and a second surface 112 perpendicular to the substrate 200, and a second cavity 110b exposing the semiconductor device 400. ) May be included. The second cavity 110b may have a rectangular shape, but is not necessarily limited thereto.

The body 100 may include a plurality of protrusions 125a, 125b, 125c, and 125d protruding from the corner portions facing in the diagonal direction among the first to fourth corner portions 127a, 127b, 127c, and 127d.

For example, the plurality of protrusions 125a and 125c may include a first protrusion 125a protruding from the first edge portion 127a and a third protrusion 125c protruding from the third edge portion 127c. . In this case, the second corner portion 127b and the fourth corner portion 127d in which the protrusions are not formed may provide a space for the vacuum chuck to hold the body 100.

However, the present invention is not limited thereto, and may further include a second protrusion (not shown) protruding from the second edge portion 127b and a fourth protrusion (not shown) protruding from the fourth edge portion 127d.

The first and third protrusions 125a and 125c may have a polygonal pillar shape. For example, the first and third protrusions 125a and 125c may include a triangular pillar shape, but are not necessarily limited thereto and may have a square pillar and a pentagonal pillar shape.

The light transmitting member 300 may be disposed on the body 100 to control the light emitted from the semiconductor device 400. The light transmitting member 300 may include a lens unit 320. The lens unit 320 may control the luminous flux so that the light emitted from the semiconductor device 400 may be uniformly irradiated. The lens unit 320 is illustrated as having a dome shape, but is not necessarily limited thereto, and may have various curvatures to uniformly control light.

The light transmitting member 300 includes a first side surface 311 and a third side surface 313 facing each other, a second side surface 312 and a fourth side surface 314 facing each other, and a first side surface 311 and a second side surface. The first edge portion 316 disposed between the 312, the second edge portion 317, the third side surface 313 and the fourth side surface disposed between the second side surface 312 and the third side surface 313. And a third edge portion 318 disposed between 314 and a fourth edge portion 315 disposed between the fourth side surface 314 and the first side surface 311. The light transmitting member 300 may have a polygonal shape, for example, a rectangular shape.

The light transmitting member 300 may include a flat surface disposed at an edge portion facing the plurality of protrusions 125a and 125c. Therefore, the light transmitting member 300 may be fixed by the first and third protrusions 125a and 125c.

In this case, the first protrusion 125a and the third protrusion 125c may include a first fastening part 125-1 disposed on surfaces facing each other, and the light transmitting member 300 may have a first edge portion 316. The second fastening part 318 may include second fastening parts 316a and 318a which are coupled to the first fastening part 125-1.

In this case, the first fastening portion 125-1 may be a protrusion and the second fastening portions 316a and 318a may be grooves, but are not necessarily limited thereto. For example, the first fastening parts 125-1 may be grooves and the second fastening parts 316a and 318a may be protrusions. The first fastening portions 125-1 and the second fastening portions 316a and 318a may extend in the protruding directions of the first and third protrusions 125a and 125c. According to this configuration, the light transmitting member 300 may be stably inserted and fixed to the first and third protrusions 125a and 125c.

The light transmitting member 300 may be fixed to one surface of the body 100 by an adhesive (not shown). The adhesive may be a UV curable resin, but is not limited thereto.

The light transmitting member 300 is not particularly limited as long as it is a material capable of transmitting light in the ultraviolet wavelength band. For example, the light transmitting member 300 may include an optical material having a high ultraviolet light transmittance such as quartz or glass, but is not limited thereto.

Referring to FIG. 14, the substrate 200 includes a second electrode 220 on which the semiconductor device 400 is disposed, a first electrode 230 spaced apart from the second electrode 220, and an edge of the substrate 200. It may include a first protrusion 270 disposed along the.

The first electrode 230, the second electrode 220, and the first protrusion 270 may be manufactured by patterning an electrode layer on the substrate 200. That is, the first protrusion 270 may be electrically insulated from the semiconductor device 400. Accordingly, the first electrode 230, the second electrode 220, and the first protrusion 270 may have the same material. For example, the first electrode 230, the second electrode 220, and the first protrusion 270 may include Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, and Si. , Ge, Ag and Au and their optional alloys.

The thickness of the first protrusion 270 may be the same as the first electrode 230 and the second electrode 220. However, the present invention is not limited thereto, and the thickness of the first protrusion 270 may be thicker than that of the first electrode 230 and the second electrode 220.

The lower surface 132 of the body 100 is provided with a second protrusion 132b in which the second cavity 110b is disposed and a recess 132a disposed along the edge, and the first protrusion 270 is a recess ( 132a). Therefore, the assembly of the substrate 200 and the body 100 can be facilitated and the alignment can be improved. In addition, it is possible to prevent the body 100 from rotating after assembly.

15 is a cross-sectional view taken along the C-C direction of FIG. 12, and FIG. 16 is a cross-sectional perspective view taken along the D-D direction of FIG. 13.

15 and 16, a cavity 110 according to an embodiment includes a first cavity 110a having an inclined first surface 111 and a second surface 112 perpendicular to the substrate 200, and The second cavity 110b exposing the semiconductor device 400 may be included.

The first surface 111 may have a parabolic shape in which the cross-sectional area increases as the distance from the substrate 200 increases. Therefore, the light emitted from the semiconductor device 400 may be upwardly reflected to increase the luminous flux and to have uniform light distribution.

The second surface 112 may be disposed on the first surface 111 and disposed perpendicular to the substrate 200. The second surface 112 may reduce the size of the semiconductor device package. When the first cavity 110a has a parabolic shape as a whole by the first surface 111, the size of the semiconductor device package should be increased.

According to an embodiment, the second surface 112 may be partially formed in the first cavity 110a to reduce the size of the semiconductor device package. Therefore, the semiconductor element package can be densely arranged.

The ratio H1: H2 of the maximum width in the vertical direction of the first surface 111 and the second surface 112 may be 1: 0.5 to 1: 0.7. If the ratio is greater than 1: 0.5, the second surface 112 may be widened to reduce the size of the semiconductor device package. If the ratio is less than 1: 0.7, the second surface 112 may be too wide to decrease the luminous flux due to total reflection. Problems can be prevented.

Referring to FIG. 13, the second surface 112 may be disposed between the corner portions of the body 100. For example, the plurality of second surfaces 112 may include a space between the first edge portion 127a and the second edge portion 127b, between the second edge portion 127b and the third edge portion 127c, and a third edge portion. It may be disposed between 127c and the fourth edge portion 127d and between the fourth edge portion 127d and the first edge portion 127a, respectively.

In this case, the vertical width of the second surface 112 may be smaller as the first to fourth edge portions 127a, 127b, 127c, and 127d become closer. Thus, the second surface 112 may have a semicircular shape. When the vertical width H2 of the second surface 112 becomes larger or the same as the first to fourth edge portions 127a, 127b, 127c, and 127d, the first cavity 110a has a parabolic shape as a whole. It can be difficult to have the desired distribution of light distribution. In addition, the luminous flux may be lowered.

The first surface 111 may extend to an area between the plurality of second surfaces 112. That is, the first surface 111 may extend to the first to fourth edge portions 127a, 127b, 127c, and 127d to partition the plurality of second surfaces 112.

15 and 16, the second cavity 110b may be disposed under the first cavity 110a. The second cavity 110b may be disposed to surround the semiconductor device 400. The second cavity 110b may have a polygonal shape or a circular shape.

The second cavity 110b may include a third surface 113 perpendicular to the substrate 200. The third surface 113 of the second cavity 110b may be parallel to the second surface 112.

The third surface 113 of the second cavity 110b includes the first inner surface 113a and the third inner surface 113c facing each other, the second inner surface 113b and the fourth inner surface 113d facing each other. ), The horizontal length of the first inner side 113a and the third inner side 113c is longer than the second inner side 113b and the fourth inner side 113d, and the second inner side 113b. The vertical width H4 of the fourth inner side surface 113d may be greater than the vertical width H3 of the first inner side surface 113a and the third inner side surface 113c.

The first inner side surface 113a of the second cavity 110b may be disposed to face the first side surface 121 of the body 100, and the third inner side surface 113c may have a third side surface of the body 100. It may be disposed to face 123.

In addition, the second inner side surface 113b of the second cavity 110b may be disposed to face the second side surface 122 of the body 100, and the fourth inner side surface 113d may be the first side surface of the body 100. It may be disposed to face the four sides 124.

The vertical width H3 of the first inner side surface 113a and the third inner side surface 113c of the second cavity 110b includes the second inner side surface 113b and the fourth inner side surface of the second cavity 110b. Closer to 113d). According to such a structure, the shape of the 2nd cavity 110b arrange | positioned under the 1st surface 111 can be formed in polygonal shape, and wire mounting area etc. can be ensured. Therefore, the reliability of the device can be improved. The vertical width H4 of the second inner side surface 113b and the third inner side surface 113c may be smaller than the vertical width H2 of the first surface 111.

17 is a conceptual diagram of a semiconductor device package according to a third exemplary embodiment of the present invention, FIG. 18 is a plan view of FIG. 17, FIG. 19 is a first modification of FIG. 18, and FIG. 20 is a second modification of FIG. 18. to be.

17 and 18, a semiconductor device package according to an embodiment may include a body 500 including a plurality of cavities 511, a plurality of semiconductor devices 400 disposed in a plurality of cavities 511, and A light transmitting member 520 including a plurality of lens units 521 disposed in the plurality of cavities 511 may be included.

The body 510 may include a plurality of cavities 511. The body 510 may be manufactured by processing an aluminum substrate. Therefore, the body 510 according to the embodiment may have both inner and outer surfaces conductive. Such a structure can have various advantages. When using a non-conductive material such as AlN, Al ₂ O ₃ as the body 510, since the reflectance of the ultraviolet wavelength band is small to 20% to 40%, there is a problem that a separate reflecting member must be disposed. In addition, a separate conductive member such as a lead frame and a circuit pattern may be required. As a result, manufacturing costs may rise and the process may become complicated. In addition, a conductive member such as gold (Au) has a problem in that light absorption efficiency is reduced by absorbing ultraviolet rays.

However, according to the embodiment, since the body 510 itself is made of aluminum, a high reflectance may be omitted in the ultraviolet wavelength range. In addition, since the body 510 itself is conductive, separate circuit patterns and lead frames may be omitted. In addition, since it is made of aluminum, the thermal conductivity may be excellent as 140W / m.k to 160W / m.k. Therefore, the heat dissipation efficiency can also be improved.

The body 510 may include a plurality of conductive parts 512 disposed in the first direction (horizontal direction). Insulation lines 514a and 514b may be disposed between the plurality of conductive parts 512. Since the plurality of conductive parts 512 are conductive, insulating lines 514a and 514b need to be disposed to separate the poles. Therefore, the insulation lines 514a and 514b may pass through the plurality of cavities 511 in the second direction (vertical direction). In this case, the first insulating line 514a may penetrate the bottom surface 511a of the cavity 511 disposed in the first column L1, and the second insulating line 514b may pass through the second column L2. It may penetrate the bottom surface 511a of the disposed cavity.

The insulation lines 514a and 514b may include all of various materials having an insulation function. In exemplary embodiments, the insulating lines 514a and 514b may include a resin such as polyimide, but are not limited thereto. The thickness of the insulation lines 514a and 514b may be 10 μm to 100 μm. When the thickness is 10 μm or more, the plurality of conductive parts 512 may be sufficiently insulated, and when the thickness is 70 μm or less, a problem of increasing the size of the package may be improved.

The shape of the cavity 110 is not particularly limited. The cavity 110 may have a parabolic shape as a whole. The cavity 110 may have a circular shape in plan but is not limited thereto and may have a polygonal shape. That is, it may have a structure of the cavity 110 described above.

The light transmitting member 520 may include a plurality of lens units 521 disposed on the plurality of cavities 110. The shape of the light transmitting member 520 may correspond to the shape of the body 510. As shown in FIG. 18, when the body 510 has a hexagonal shape, the light transmitting member 520 may also have a hexagonal shape. When the outer surface of the body 510 has a hexagonal shape, the cavity 110 disposed therein may be most densely disposed. Therefore, the number of semiconductor elements 400 per unit area increases, so that light output can be improved. In this case, the cavities 511 are staggered from each other to reduce the space between the cavities 511. However, the shape of the body is not limited thereto and may have various polygonal shapes or circular shapes. For example, the body 510 may have a quadrangular shape as shown in FIG. 19, or may have a triangular shape as shown in FIG. 20.

FIG. 21 is a cross-sectional view of a semiconductor device package according to a fourth embodiment of the present invention, FIG. 22 is a partially exploded perspective view of a semiconductor device package according to a fourth embodiment of the present invention, and FIG. 23 is a fourth embodiment of the present invention. A plan view of a semiconductor device package according to FIG.

21 and 22, a semiconductor device package 600 according to an embodiment may include a substrate 610, a body 620 disposed on the substrate 610, and including a plurality of cavities 621. The light emitting member 630 may include a plurality of semiconductor elements 400 disposed in the cavity 621, and a plurality of lens units 631 disposed on the plurality of cavities 621, respectively.

The semiconductor device package according to the embodiment may be formed by combining a plurality of semiconductor device packages of FIG. 15. That is, a plurality of semiconductor devices 400 may be disposed on the substrate 610, and a cavity 621 in which each semiconductor device 400 may be disposed may be formed in the body 620. In addition, the light transmitting member 630 may include a plurality of lens units 631 disposed in the plurality of cavities 621.

In this case, all of the structures described with reference to FIGS. 12 to 16 may be applied to the semiconductor device package. For example, the cavity 621 may include a first surface 111 having an inclination and a second surface 112 perpendicular to the substrate 610. In addition, it may have a structure of the second cavity (110b). In addition, all of the above-described structure in FIGS. 1 to 11 may be applied.

According to an embodiment, the zener diode 410 may be disposed in the groove 624 formed inside the body. According to such a configuration, light emitted from the semiconductor device 400 may be prevented from being absorbed by the zener diode 410, thereby improving light output. The groove 624 may be connected to or spaced from the second cavity 110b. The zener diode 410 may be electrically connected to the circuit pattern of the semiconductor device 400.

Referring to FIG. 23, the shape 600 of the semiconductor device package may have a square shape. However, the present invention is not limited thereto, and the semiconductor device package may have various polygonal shapes such as triangular shape, pentagonal shape, and hexagonal shape.

The semiconductor device may be applied to various kinds of light emitting devices. For example, the light emitting device may be a concept including a sterilizing device, a curing device, an exposure device, a lighting device, and a display device and a vehicle lamp. That is, the semiconductor device may be applied to various electronic devices disposed in a case to provide light.

The sterilization apparatus may include a semiconductor device according to the embodiment to sterilize a desired region. The sterilizer may be applied to household appliances such as water purifiers, air conditioners and refrigerators, but is not necessarily limited thereto. That is, the sterilization apparatus can be applied to all the various products (eg, medical devices) requiring sterilization.

Illustratively, the water purifier may be provided with a sterilizing device according to the embodiment to sterilize the circulating water. The sterilization apparatus may be disposed at a nozzle or a discharge port through which water circulates to irradiate ultraviolet rays. At this time, the sterilization apparatus may include a waterproof structure.

The curing apparatus includes a semiconductor device according to an embodiment to cure various kinds of liquids. Liquids can be the broadest concept that includes all of the various materials that cure when irradiated with ultraviolet light. By way of example, the curing apparatus may cure various kinds of resins. Alternatively, the curing device may be applied to cure a cosmetic product such as a nail polish.

The exposure apparatus may transfer a desired pattern to the photosensitive film by placing a mask on which a desired pattern is formed on a sample coated with a photo-resist, which is a material reacting with light, and irradiating ultraviolet rays. For example, semiconductor devices, circuit boards (PCBs), and display panels, which are embedded as main components of electronic devices, may form fine circuit patterns using photolithography techniques in an exposure process.

The lighting apparatus may include a light source module including a substrate and the semiconductor device of the embodiment, a heat dissipation unit for dissipating heat of the light source module, and a power supply unit for processing or converting an electrical signal provided from the outside and providing the light source module to the light source module. In addition, the lighting apparatus may include a lamp, a head lamp, or a street lamp.

The display device may include a bottom cover, a reflector, a light emitting module, a light guide plate, an optical sheet, a display panel, an image signal output circuit, and a color filter. The bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may constitute a backlight unit.

The reflecting plate is disposed on the bottom cover, and the light emitting module may emit light. The light guide plate may be disposed in front of the reflective plate to guide light emitted from the light emitting module to the front, and the optical sheet may include a prism sheet or the like to be disposed in front of the light guide plate. The display panel is disposed in front of the optical sheet, the image signal output circuit supplies an image signal to the display panel, and the color filter may be disposed in front of the display panel.

The semiconductor device may be used as an edge type backlight unit or a direct type backlight unit when used as a backlight unit of a display device.

The semiconductor element may be a laser diode in addition to the light emitting diode described above.

Like the light emitting device, the laser diode may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure. In addition, although the p-type first conductive semiconductor and the n-type second conductive semiconductor are bonded to each other, an electro-luminescence phenomenon is used in which light is emitted when a current flows, but the direction of emitted light is used. There is a difference in and phase. That is, a laser diode may emit light having a specific wavelength (monochromatic beam) in the same direction with the same phase by using a phenomenon called stimulated emission and a constructive interference phenomenon. Due to this, it can be used for optical communication, medical equipment and semiconductor processing equipment.

For example, a photodetector may be a photodetector, which is a type of transducer that detects light and converts its intensity into an electrical signal. Such photodetectors include photovoltaic cells (silicon, selenium), photoelectric devices (cadmium sulfide, cadmium selenide), photodiodes (e.g. PD having peak wavelength in visible blind or true blind spectral regions) Transistors, optoelectronic multipliers, phototubes (vacuum, gas encapsulation), infrared (Infra-Red) detectors, and the like, but embodiments are not limited thereto.

In addition, a semiconductor device such as a photodetector may generally be manufactured using a direct bandgap semiconductor having excellent light conversion efficiency. Alternatively, the photodetector has various structures, and the most common structures include a pin photodetector using a pn junction, a Schottky photodetector using a Schottky junction, a metal semiconductor metal (MSM) photodetector, and the like. have.

Like a light emitting device, a photodiode may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer having the above-described structure, and have a pn junction or pin structure. The photodiode operates by applying a reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and current flows. In this case, the magnitude of the current may be approximately proportional to the intensity of light incident on the photodiode.

Photovoltaic cells or solar cells are a type of photodiodes that can convert light into electrical current. The solar cell may include the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer having the above-described structure, similarly to the light emitting device.

In addition, through the rectification characteristics of a general diode using a p-n junction it may be used as a rectifier of an electronic circuit, it may be applied to an ultra-high frequency circuit and an oscillation circuit.

In addition, the semiconductor device described above is not necessarily implemented as a semiconductor and may further include a metal material in some cases. For example, a semiconductor device such as a light receiving device may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, and may be implemented by a p-type or n-type dopant. It may also be implemented using a doped semiconductor material or an intrinsic semiconductor material.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (16)

A body including a first cavity; And
A semiconductor device disposed inside the first cavity,
The first cavity includes a first surface inclined such that an area becomes wider as it moves away from the semiconductor device, and a plurality of second surfaces perpendicular to an upper surface of the semiconductor device.
The body has a first edge portion disposed in an area where the first outer side and the third outer side facing each other, the second outer side and the fourth outer side facing each other, the first outer side and the second outer side meet; A second corner portion disposed in an area where the second outer surface and the third outer surface meet, a third edge portion disposed in an area where the third outer surface and the fourth outer surface meet, and the fourth outer surface and the fourth outer surface A fourth edge portion disposed in an area where the first outer surface meets,
The plurality of second surfaces may be disposed between the first edge portion and the second edge portion, between the second edge portion and the third edge portion, between the third edge portion and the fourth edge portion, and the fourth edge portion. A semiconductor device package disposed between the first edge portion.
The method of claim 1,
A semiconductor device package comprising a substrate on which the semiconductor device is disposed.
The method of claim 2,
The body includes a second cavity connected to the first cavity and penetrating the lower surface of the body,
The side surface of the second cavity has a third surface perpendicular to one surface of the substrate.
The method of claim 1,
The vertical width of the plurality of second surfaces becomes smaller as the first to fourth corner portions become closer.
The method of claim 3,
The first direction width of the third surface is larger as the closer to the first to fourth corner portion.
The method of claim 3,
And a first boundary between the first and second surfaces is curved.
The method of claim 6,
And a second boundary between the third surface and the first surface is curved.
The method of claim 7, wherein
The semiconductor device package of claim 1, wherein the curves of the first boundary and the second boundary have the same curvature.
The method of claim 1,
The first surface extends to the first to fourth edges to define the plurality of second surfaces.
The method of claim 3,
The second cavity is a semiconductor device package having a rectangular shape.
The method of claim 10,
The second cavity includes a first side and a third side facing each other, a second side and a fourth side facing each other,
The length of the first side and the third side is longer than the second side and the fourth side,
The semiconductor device package of claim 1, wherein a vertical width of the second side surface and a fourth side surface is greater than a vertical width of the first side surface and the third side surface.
The method of claim 3,
The vertical width of the plurality of second surfaces is smaller than the vertical width of the first surface.
The method of claim 12,
The vertical width of the plurality of second surface is a semiconductor device package ratio of 1: 1.2 to 1: 1.8 of the vertical width of the first surface.
The method of claim 3,
The substrate includes a first electrode on which the semiconductor device is disposed, a second electrode spaced apart from the first electrode, and a first protrusion disposed along an edge of the substrate,
On the other side of the body is disposed a recess surrounding the second cavity,
The recessed portion is a semiconductor device package disposed on the first protrusion.
The method of claim 1,
And a light transmitting member disposed on the body to cover the cavity.
Circuit board; And a plurality of semiconductor device packages disposed on the circuit board,
The semiconductor device package,
A body including a first cavity; And
A semiconductor device disposed inside the first cavity,
The first cavity includes a first surface inclined such that an area becomes wider as it moves away from the semiconductor device, and a plurality of second surfaces perpendicular to an upper surface of the semiconductor device.
The body has a first edge portion disposed in an area where the first outer side and the third outer side facing each other, the second outer side and the fourth outer side facing each other, the first outer side and the second outer side meet; A second corner portion disposed in an area where the second outer surface and the third outer surface meet, a third edge portion disposed in an area where the third outer surface and the fourth outer surface meet, and the fourth outer surface and the fourth outer surface A fourth edge portion disposed in an area where the first outer surface meets,
The plurality of second surfaces may be disposed between the first edge portion and the second edge portion, between the second edge portion and the third edge portion, between the third edge portion and the fourth edge portion, and the fourth edge portion. Light emitting devices respectively disposed between the first edge portions.

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