KR20170114719A - Semiconductor device package - Google Patents

Abstract

An embodiment relates to a semiconductor device package, comprising: a substrate; A first lead frame and a second lead frame electrically spaced from each other on the substrate; A plating layer disposed on the top and bottom surfaces of the first lead frame and the second lead frame, respectively; A semiconductor element electrically connected to the first lead frame and the second lead frame; And a molding part surrounding the semiconductor device, wherein the plating layer is disposed on the first lead frame and the second lead frame, and includes: a first plating layer including nickel (Ni); A second plating layer disposed on the first plating layer and including silver (Ag); And a third plating layer disposed on the second plating layer and including gold (Au).

Description

[0001] SEMICONDUCTOR DEVICE PACKAGE [0002]

An embodiment relates to a semiconductor device package.

Semiconductor devices including compounds such as GaN and AlGaN have many advantages such as having a wide and easily adjustable band gap energy, and are used in various applications such as light emitting devices and light receiving devices.

Particularly, a light emitting device such as a light emitting diode or a laser diode using a semiconductor material of Group 3-5 or 2-6 group semiconductors can be applied to various devices such as a red, Blue, and ultraviolet rays. By using fluorescent materials or combining colors, it is possible to realize a white light beam with high efficiency. Also, compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, , Safety, and environmental friendliness.

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

A semiconductor device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer formed on a substrate made of sapphire or the like. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer One electrode and the second electrode are disposed.

The semiconductor device package has a first electrode and a second electrode disposed on a package body, a semiconductor element disposed on a bottom surface of the package body, and electrically connected to the first electrode and the second electrode.

In the semiconductor device package, a plating layer of metal is disposed on the lead frame, and an adhesive for bonding the semiconductor element to the plating layer is applied. When the adhesive agent has a certain time, the adhesive force is lowered and the semiconductor element is lifted from the lead frame, so that the durability and the reliability of the semiconductor device package are greatly deteriorated.

The embodiment intends to improve the durability and reliability of the semiconductor device package.

According to an aspect of the present invention, A first lead frame and a second lead frame electrically spaced from each other on the substrate; A plating layer disposed on the top and bottom surfaces of the first lead frame and the second lead frame, respectively; A semiconductor element electrically connected to the first lead frame and the second lead frame; And a molding part surrounding the semiconductor device, wherein the plating layer is disposed on the first lead frame and the second lead frame, and includes: a first plating layer including nickel (Ni); A second plating layer disposed on the first plating layer and including silver (Ag); And a third plating layer disposed on the second plating layer and including gold (Au).

For example, it may further include an adhesive member disposed between the semiconductor element and the plating layer.

For example, the thickness of the first plating layer may be 0.1 탆 to 2.5 탆, the thickness of the second plating layer may be 0.5 탆 to 4.0 탆, and the thickness of the third plating layer may be 0.003 탆 to 0.07 탆.

For example, a first insulating layer may be formed between the semiconductor element and the molding portion. And a second insulating layer disposed between the plating layer and the molding portion.

For example, the semiconductor device may be connected to the first lead frame and the second lead frame via a first wire and a second wire, respectively.

For example, the semiconductor device may further include a reflector that forms a cavity together with the plating layer disposed on the first lead frame and the second lead frame, and the semiconductor device may be disposed in the cavity.

For example, the display device may further include a fourth insulating film disposed between the reflector and the molding part.

The semiconductor device package according to the embodiment can improve the durability and reliability of the semiconductor device package by preventing the semiconductor device bonded by the plating layer and the bonding member from peeling off from the plating layer in the heat treatment process in which the bonding member is cured.

1 is a plan view showing a semiconductor device package according to an embodiment.
2 is a cross-sectional view taken along line AA 'of FIG.
3 is a view illustrating a structure of a plating layer according to an embodiment of the semiconductor device package shown in FIG.
4 is a cross-sectional view of a semiconductor device package according to another embodiment.
FIG. 5 is a graph showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a conventional semiconductor device package is applied.
6A and 6B are graphs and tables showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a semiconductor device package according to the embodiment is applied.
FIGS. 7A and 7B are graphs and tables showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a semiconductor device package according to another embodiment is applied.
8A and 8B are graphs and tables showing the rate of change of luminous flux with time of a semiconductor device package using a plating layer of a semiconductor device package according to yet another embodiment.
9 is a photograph showing a residue of a semiconductor device package to which a conventional plating layer is applied.
10 is a photograph showing a residue of a semiconductor device package to which a plating layer according to the embodiment is applied.
11 is an exploded perspective view showing an embodiment of an image display apparatus including a semiconductor device package according to an embodiment.
12 is an exploded perspective view showing an embodiment of a lighting device in which a semiconductor device package according to the embodiment is disposed.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include a light emitting element, a light receiving element, and the like. The light emitting element and the light receiving element may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer.

The semiconductor device according to this embodiment may be a light emitting device.

As described above, electrons injected through the first conductive type semiconductor layer and holes injected through the second conductive type semiconductor layer meet with each other to emit light having energy determined by a specific energy band of the material. At this time, the emitted light may be different depending on the composition of the material.

The light emitting device is formed of a light emitting device package and can be used as a light source of an illumination system, for example, as a light source of an image display device or a lighting device.

When used as a backlight unit of a video display device, it can be used as an edge-type backlight unit or as a direct-type backlight unit. When used as a light source of a lighting device, it can be used as a regulator or bulb type. It is possible.

The light emitting element has a laser diode in addition to the light emitting diode. The light emitted from the light emitting device is mixed with light in a plurality of wavelength ranges, and light can be radiated around the light emitting device. The laser diode may include a first conductivity type semiconductor layer having the above-described structure, an active layer, and a second conductivity type semiconductor layer. Then, an electro-luminescence phenomenon in which light is emitted from the active layer when a current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, There is a difference between the directionality of light and the wavelength band. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication.

The light receiving element may refer to a photodetector, which is a kind of transducer that detects light and converts its intensity into an electric signal. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tubes, phototube (vacuum, gas-filled), IR (Infra-Red) detectors, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have. Among them, the pin type photodetector and the Schottky type photodetector can be implemented using a nitride semiconductor material.

Like the light emitting device, the light receiving device such as a photodiode may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and may have a p-n junction or a pin structure. When a reverse bias voltage is applied to the photodiode, the resistance becomes very high and a minute current flows. However, when light is incident on the photodiode, electrons and holes are generated and a current flows. The magnitude of the voltage is almost proportional to the intensity of light incident on the photodiode do.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current using a photoelectric effect. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer having the above-described structure. When sunlight or the like is incident from the outside, electrons and holes are generated in the n-type first conductivity type semiconductor layer and the p-type second conductivity type semiconductor layer, respectively. When the n-type electrode and the p-type electrode are connected to each other, electrons move from the n-type electrode to the p-type electrode, and current flows.

The solar cell can be divided into a crystalline solar cell and a thin film solar cell. The thin film solar cell can be divided into an inorganic thin film solar cell and an organic thin film solar cell.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor element such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, or As, and doped with a p- Or may be implemented using a semiconductor material or an intrinsic semiconductor material.

Hereinafter, a semiconductor device package according to an embodiment including a semiconductor device that performs a function corresponding to the above-described light emitting device will be described.

FIG. 1 is a plan view showing a semiconductor device package 100A according to an embodiment, and FIG. 2 is a sectional view taken along line A-A 'of FIG.

The semiconductor device package 100A according to the present embodiment includes a substrate 110, a first lead frame 121 and a second lead frame 122, a plated layer 130, a semiconductor device 150, and a molding part 160 .

In the embodiment, the substrate 110 may be formed of a silicon material, a synthetic resin material, or a metal material. The substrate 110 may function as a package body. The substrate 110 may include a thermally conductive substrate As shown in FIG.

The first lead frame 121 and the second lead frame 122 are electrically separated from each other on the substrate 110. The first and second leadframes 121 and 122, which are formed on the semiconductor device 150, (Not shown) and electrically connected to each other.

The first electrode pad (not shown) and the second electrode pad (not shown) may be formed of at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu) And an alloy thereof.

The first lead frame 121 and the second lead frame 122 are electrically separated from each other and electrically connected to the semiconductor element 150 electrically connected to the first lead frame 121 and the second lead frame 122 Respectively. Here, the first lead frame 121 and the second lead frame 122 may reflect light emitted from the semiconductor device 150.

The first lead frame 121 and the second lead frame 122 may be made of a conductive material such as copper and a plating layer 130 may be formed on the upper and lower surfaces of the first lead frame 121 and the second lead frame 122 .

3 is a view showing a structure of a plating layer according to an embodiment of the semiconductor device package 100A shown in FIG.

As shown in FIG. 3, the plating layer 130 disposed in a vertically symmetrical manner about the lead frame of the semiconductor device package may include first to third plating layers 131 to 133. Here, the first plating layer 131 is disposed on the first lead frame 121 and the second lead frame 122. The second plating layer 132 is disposed on the first plating layer 131 and the third plating layer 133 is disposed on the second plating layer 132.

The first plating layer 131 may include nickel (Ni), the second plating layer 132 may include silver (Ag), the third plating layer 133 may include gold .

The first plated layer 131 including nickel (Ni) is formed of a first lead frame made of a conductive material such as copper and a second lead frame made of a metal of copper, which is generated through thermal history, It can prevent diffusion and prevent corrosion of copper.

In an embodiment, the thickness of the first plating layer 131 may be 0.1 탆 to 2.5 탆.

Here, if the thickness of the first plating layer 131 including nickel (Ni) is less than 0.1 占 퐉, the strength of the plating layer may be weakened and there is a limit to prevent corrosion of copper. If the thickness of the first plating layer 131 is thicker than 2.5 占 퐉, the entire thickness of the plating layer may become too thick.

Therefore, the thickness of the first plating layer 131 can be determined in consideration of the strength and corrosion resistance of the plating layer.

The second plating layer 132 containing silver (Ag) smoothes the surface of the first plating layer 131 formed with porosity and contributes to improvement of corrosion resistance. In addition, when the semiconductor element is wire-bonded to the semiconductor element package, Can be improved.

In an embodiment, the thickness of the second plating layer 132 may be 0.5 탆 to 4.0 탆.

If the thickness of the second plating layer 132 is less than 0.5 탆, there is a limit to smooth the surface of the first plating layer 131 formed with pores. If the thickness of the second plating layer 132 is thicker than 4.0 탆 The cost of manufacturing the plating layer increases.

The third plating layer 133 including gold (Au) prevents oxidation or discoloration of the second plating layer 132 containing silver (Ag) due to the external environment, and the second plating layer 133 containing silver It is possible to prevent the molding bonding force from being lowered during molding due to the hygroscopicity of the plating layer 132.

The thickness of the third plating layer 133 may be 0.003 mu m to 0.07 mu m.

If the thickness of the third plating layer 133 is less than 0.003 μm, there is a limit to prevent sulfur corrosion. If the thickness of the third plating layer 133 is thicker than 0.07 μm, the manufacturing cost of the plating layer is increased. Therefore, the thickness of the third plating layer 133 can be formed to a minimum thickness that can prevent sulfur corrosion while reducing the manufacturing cost of the plating layer.

As described above, the thicknesses of the first plating layer 131, the second plating layer 132, and the third plating layer 133 may be determined in consideration of the strength of the plating layer, the corrosion resistance, and the package manufacturing cost. According to the embodiments, since the semiconductor element bonded to the plating layer by the bonding member is prevented from being lifted from the plating layer by the adhesive force during the curing of the bonding member, the durability and reliability of the semiconductor element package can be improved It is effective.

4 is a cross-sectional view showing a semiconductor device package 100B according to another embodiment.

2 and 4, the semiconductor device package 100B may further include an adhesive member 155 disposed between the semiconductor device 150 and the plated layer 130. As shown in FIG. An adhesive member 155 may be disposed between the semiconductor element 150 and the plating layer 130 so that the semiconductor element may be connected and fixed on the conductive layer. And the first lead frame, and between the second electrode pad and the second lead frame, respectively.

Here, the adhesive member 155 may be made of Au or Sn and a lead-free solder such as Sn / Ag, Sn / Cu, Sn / Zn, Sn / Zn / Bi, Sn / Zn / Bi, Sn / Ag / Cu, (Lead-free solder) and high lead and eutectic lead solder.

If the thickness (BLT: Bonding Layer Thickness) of the adhesive member 155 is too small, the first lead frame 121 and the second lead frame 122 are bonded to the semiconductor element 150, Buffer layer). If the thickness of the adhesive member 155 is large, the adhesive force becomes unstable.

Therefore, the thickness of the adhesive member 155 is set so as to bond the first lead frame 121 and the second lead frame 122 to the semiconductor device 150 and to serve as a buffer layer .

The semiconductor device package 100B further includes a reflector 115 that forms a cavity together with a plating layer 130 disposed on top of the first and second lead frames 121 and 122, May be disposed in the cavity. Here, the reflector 115 can increase the luminance by reflecting the light emitted from the semiconductor device 150 to the front surface (upward in FIGS. 2 and 4) of the semiconductor device package 100B.

The molding part 160 may surround the semiconductor element 150 to protect the semiconductor element 150 and may be disposed around the semiconductor element 150 to change the course of light emitted from the semiconductor element 150 to serve as a lens . The phosphor may be included in the molding part 160 to excite the light of the first wavelength range emitted from the semiconductor device 150 to emit light of the second wavelength range.

The molding part 160 may be a dome type in which a part of the area corresponding to the semiconductor device 150 is recessed as shown in the figure or may be arranged in a different shape to control the light output angle of the semiconductor device package .

Although not shown, the phosphor layer may be disposed on the semiconductor element 150, and the phosphor layers may be disposed at a constant thickness of a conformal coating type, and the function of the phosphor layer may be described in detail And may be the same as the case where the fluorescent material is disposed in one molding part 160.

The semiconductor device 150 may be a flip chip or a flip chip bonded vertically on a substrate.

In addition, the semiconductor device 150 to be mounted on the semiconductor device package may be arranged as a vertical semiconductor device or a horizontal semiconductor device. The first electrode pad and the second electrode pad (not shown) of the semiconductor device 150 are electrically connected to the first lead frame 121 and the second lead frame 122, respectively, Two wires 152 may be electrically connected.

The first wire 151 and the second wire 152 may be made of a conductive material and may be made of gold (Au) having a diameter of 0.8 to 1.6 millimeters. If the thickness of the wire is too thin, it can be cut by an external force. If it is too thick, the material cost is increased and the light emitted from the semiconductor device may become an obstacle to the progress.

On the other hand, when the bonding member disposed between the plating layer and the semiconductor element is cured, the third plating layer of the plating layer hinders the curing of the bonding member, so that the adhesive force of the bonding member may be greatly lowered.

2 and 4, the semiconductor device package 100B according to the embodiment includes a first insulating film 140a disposed between the semiconductor device 150 and the molding part 160, And a second insulating layer 140b disposed between the plating layer 130 and the molding portion 160. [ In addition, it may further include a fourth insulating layer 140d disposed between the reflector 115 and the molding portion 160. FIG.

Each of the insulating films 140a, 140b, and 140d may include a silicon oxide film.

The first insulating film 140a, the second insulating film 140b, and the fourth insulating film 140d are disposed on the plating layer, the semiconductor element disposed on the plating layer, and the reflector so that the semiconductor element bonded to the plating layer by the bonding member It is possible to prevent the semiconductor element from being lifted from the plating layer due to the decrease in the adhesive force during the curing of the adhesive member and to prevent the lifting between the reflector and the molding part due to the heat generated in the semiconductor element, thereby improving the durability and reliability of the semiconductor device package There is an effect that can be made.

FIG. 5 is a graph showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a conventional semiconductor device package is applied.

The rate of change of the luminous flux with time during use of the semiconductor device package can be maintained within a certain range to ensure the reliability of the semiconductor device package. The rate of change of the luminous flux of the semiconductor device package to which the conventional plating layer is applied, .

6A and 6B are graphs and tables showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a semiconductor device package according to the embodiment is applied.

6A and 6B, when the thicknesses of nickel (Ni), silver (Ag), and Au (gold) are 0.5 μm, 2.0 μm, and 0.01 μm, respectively, The luminous flux change rate is measured from 63.43% to 111.92%. The maximum value of the standard deviation (STEDEV) is 3.86% when 336 hours have elapsed, which means that the luminous flux change rate is not greater than that of the conventional semiconductor device package using the plating layer for 1,000 hours.

FIGS. 7A and 7B are graphs and tables showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a semiconductor device package according to another embodiment is applied.

7A and 7B, when the thicknesses of nickel (Ni), silver (Ag), and Au (gold) are 2.0 μm, 1.0 μm, and 0.01 μm, respectively, The luminous flux change rate is measured from 79.85% to 109.85%. The maximum value of the standard deviation (STEDEV) is 4.50% when 336 hours have elapsed, which means that the rate of change of the luminous flux is not greater than that of the conventional semiconductor device package using the plating layer for 1,000 hours.

8A and 8B are graphs and tables showing the rate of change of luminous flux with time of a semiconductor device package to which a plating layer of a semiconductor device package according to another embodiment is applied.

8A and 8B, when the thicknesses of nickel (Ni), silver (Ag), and Au (gold) were 1.0 μm, 0.5 μm, and 0.01 μm, respectively, The luminous flux change rate is measured from 85.79% to 106.99%. The maximum value of the standard deviation (STEDEV) is 2.34% when 336 hours have elapsed, which means that the luminous flux change rate is not greater for 1,000 hours than the semiconductor device package to which the conventional plating layer is applied.

The lifetime of the semiconductor element is related to the rate of change of the initial luminous flux. It can be seen that the luminous flux change rate of the semiconductor device package according to the embodiments is not large and stable for 336 hours.

FIG. 9 is a photograph showing a residue of a semiconductor device package using a conventional plating layer, and FIG. 10 is a photograph showing a residue of a semiconductor device package using a plating layer according to an embodiment.

FIG. 9 shows a residue of a semiconductor device package in which a plating layer containing nickel (Ni) and a plating layer containing gold (Au) are disposed, FIG. 10 shows a first plating layer containing nickel (Ni) (Ag), and a third plating layer containing gold (Au).

Referring to FIGS. 9 and 10, the residual percentage of the semiconductor device package using the conventional plating layer is 10%, and the residual percentage of the semiconductor device package using the plating layer according to the embodiment is measured as 80% It can be seen that the residual rate of the applied semiconductor device package is improved.

Therefore, the rate of change of the luminous flux with time of the semiconductor device package using the plating layer according to the present embodiments is measured to be small, thereby improving durability and reliability of the semiconductor device package.

A plurality of semiconductor device packages according to the embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the optical path of the semiconductor device package. These semiconductor device packages, substrates, and optical members can function as light units. Still another embodiment may be implemented as a display device, an indicating device, a lighting system including the semiconductor element or the semiconductor element package described in the above embodiments, for example, the lighting system may include a lamp and a streetlight.

Hereinafter, a backlight unit and a lighting apparatus will be described as an embodiment of the illumination system in which the above-described semiconductor element or semiconductor element package is arranged.

11 is an exploded perspective view showing an embodiment of an image display apparatus including a semiconductor device package according to an embodiment.

11, the image display device 900 according to the present embodiment includes a light source module, a reflection plate 920 on the bottom cover 910, and a reflection plate 920 disposed on the front side of the reflection plate 920, A first prism sheet 950 and a second prism sheet 960 disposed in front of the light guide plate 940 and a second prism sheet 960 that guides the emitted light to the front side of the image display device, A panel 970 disposed in front of the panel 970 and a color filter 980 disposed in the front of the panel 970.

The light source module comprises a semiconductor device package 935 on a circuit board 930. Here, the circuit board 930 may be a PCB or the like, and the semiconductor device package 935 is as described above.

The image display device may be an edge-type backlight unit as well as a direct-type backlight unit.

In the semiconductor device package used in the above-described image display device, a silicon oxide film is formed on the surfaces of the first lead frame and the second lead frame to prevent moisture and air from penetrating from the outside, thereby improving durability and reliability.

12 is an exploded perspective view showing an embodiment of a lighting device in which a semiconductor device package according to the embodiment is disposed.

The lighting apparatus according to the present embodiment may include a cover 1100, a light source module 1200, a heat discharger 1400, a power supply unit 1600, an inner case 1700, and a socket 1800. Further, the illumination device according to the embodiment may further include at least one of the member 1300 and the holder 1500, and the light source module 1200 may include the semiconductor device package according to the above-described embodiments .

The cover 1100 may have a shape of a bulb or a hemisphere and may be provided in a shape in which the hollow is hollow and a part is opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 can diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the heat discharging body 1400. The cover 1100 may have an engaging portion that engages with the heat discharging body 1400.

The inner surface of the cover 1100 may be coated with a milky white paint. Milky white paints may contain a diffusing agent to diffuse light. The surface roughness of the inner surface of the cover 1100 may be formed larger than the surface roughness of the outer surface of the cover 1100. This is for sufficiently diffusing and diffusing light from the light source module 1200 and emitting it to the outside.

The cover 1100 may be made of glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, and may be opaque. The cover 1100 may be formed by blow molding.

The light source module 1200 may be disposed on one side of the heat discharger 1400. Accordingly, the heat from the light source module 1200 is conducted to the heat discharging body 1400. The light source module 1200 may include a semiconductor device package 1210, a connection plate 1230, and a connector 1250. The semiconductor device package 1210 is as shown in the above embodiments, and a silicon oxide film is formed on the surfaces of the first lead frame and the second lead frame to prevent moisture and air from penetrating from the outside, Can be improved.

The member 1300 is disposed on the upper surface of the heat discharging body 1400 and has a plurality of semiconductor device packages 1210 and guide grooves 1310 into which the connector 1250 is inserted. The guide groove 1310 corresponds to the substrate of the semiconductor device package 1210 and the connector 1250.

The surface of the member 1300 may be coated or coated with a light reflecting material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 reflects the light reflected by the inner surface of the cover 1100 and returns toward the light source module 1200 toward the cover 1100. Therefore, the light efficiency of the illumination device according to the embodiment can be improved.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact can be made between the heat discharging body 1400 and the connecting plate 1230. The member 1300 may be made of an insulating material to prevent an electrical short between the connection plate 1230 and the heat discharger 1400. The heat discharger 1400 receives heat from the light source module 1200 and heat from the power supply unit 1600 to dissipate heat.

The holder 1500 closes the receiving groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 housed in the insulating portion 1710 of the inner case 1700 is sealed. The holder 1500 has a guide protrusion 1510. The guide protrusion 1510 has a hole through which the projection 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electric signal provided from the outside and provides the electric signal to the light source module 1200. The power supply unit 1600 is housed in the receiving groove 1719 of the inner case 1700 and is sealed inside the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide unit 1630, a base 1650, and an extension unit 1670.

The guide portion 1630 has a shape protruding outward from one side of the base 1650. The guide portion 1630 may be inserted into the holder 1500. A plurality of components may be disposed on one side of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power supplied from an external power source to a DC power source, a driving chip for controlling driving of the light source module 1200, an ESD (ElectroStatic discharge) protective device, and the like, but the present invention is not limited thereto.

The extension 1670 has a shape protruding outward from the other side of the base 1650. The extension portion 1670 is inserted into the connection portion 1750 of the inner case 1700 and receives an external electrical signal. For example, the extension portion 1670 may be provided to be equal to or smaller than the width of the connection portion 1750 of the inner case 1700. One end of each of the positive wire and the negative wire is electrically connected to the extension portion 1670 and the other end of the positive wire and the negative wire are electrically connected to the socket 1800 .

The inner case 1700 may include a molding part together with the power supply unit 1600 in the inner case 1700. The molding part is a hardened portion of the molding liquid so that the power supply providing part 1600 can be fixed inside the inner case 1700.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100A, 100B: semiconductor device package 110: substrate
115: Reflector 121: First lead frame
122: second lead frame 130: plated layer
131: first plating layer 132: second plating layer
133: third plating layer 140a: first insulating film
140b: second insulating film 140d: fourth insulating film
150: semiconductor element 151: first wire
152: second wire 155: adhesive member
160: Molding part

Claims (7)

Board;
A first lead frame and a second lead frame electrically spaced from each other on the substrate;
A plating layer disposed on the top and bottom surfaces of the first lead frame and the second lead frame, respectively;
A semiconductor element electrically connected to the first lead frame and the second lead frame; And
And a molding portion surrounding the semiconductor element,
The plating layer
A first plating layer disposed on the first lead frame and the second lead frame, the first plating layer including nickel (Ni);
A second plating layer disposed on the first plating layer and including silver (Ag); And
And a third plating layer disposed on the second plating layer and including gold (Au). The method according to claim 1,
And a bonding member disposed between the semiconductor element and the plating layer. The method according to claim 1,
The thickness of the first plating layer is 0.1 탆 to 2.5 탆,
The thickness of the second plating layer is 0.5 mu m to 4.0 mu m,
And the thickness of the third plating layer is 0.003 mu m to 0.07 mu m. The method according to claim 1,
A first insulating film between the semiconductor element and the molding part; And
And a second insulating film disposed between the plating layer and the molding part. The method according to claim 1,
Wherein the semiconductor element is connected to the first lead frame and the second lead frame via a first wire and a second wire, respectively. The method according to claim 1,
Further comprising a reflector forming a cavity together with the plating layer disposed on the first lead frame and the second lead frame,
Wherein the semiconductor element is disposed in the cavity. The method according to claim 6,
And a fourth insulating film disposed between the reflector and the molding part.

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