KR20180076497A - Semiconductor device and semiconductor device package having thereof - Google Patents

Abstract

An embodiment of the present invention relates to a semiconductor device. The semiconductor device disclosed in the embodiment of the present invention includes: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; and a first semiconductor layer arranged in at least one of regions between the active layer and the first and second conductive semiconductor layers, wherein the first semiconductor layer includes a dopant for converting light emitted from the active layer into an infrared wavelength. Accordingly, the present invention can remove defects transferred to the active layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor device,

Embodiments relate to semiconductor devices.

Embodiments relate to semiconductor devices that emit infrared-converted light.

An embodiment relates to a semiconductor device package having an infrared semiconductor element.

In general, a nitride semiconductor material including a Group V source such as nitrogen (N) and a Group III source such as gallium (Ga), aluminum (Al), or indium (In) has excellent thermal stability, Has a band structure and is widely used as a nitride semiconductor device, for example, a nitride semiconductor light emitting device in an ultraviolet region and a material for a solar cell.

The nitride-based material has a wide energy band gap of 0.7 eV to 6.2 eV, and is thus widely used as a material for a solar cell device due to its characteristics matching the solar spectrum region. In particular, ultraviolet light emitting devices have been utilized in various industrial fields such as a curing apparatus, a medical analyzer, a therapeutic apparatus, and a sterilizing, water purification, and purification system.

A lamp that emits an infrared light is a skin and physical therapy device that can alleviate skin treatment or physique, and can be used simultaneously with infrared effect, infrared treatment effect, or laser treatment effect using infrared wavelength. Lamps emitting infrared wavelengths are used in military, industrial or medical applications.

The embodiment provides a semiconductor device having a semiconductor layer that converts into an infrared wavelength in a light emitting structure.

The embodiment provides a semiconductor device having a semiconductor layer that emits as a second light in a light emitting structure that emits a first light.

The embodiment provides a semiconductor device having a semiconductor layer for wavelength-converting the first light into a second light, either inside or outside the light-emitting structure that emits the first light.

An embodiment provides a semiconductor device having a semiconductor layer that converts a first light into a second light having a wavelength difference of 1000 nm or more.

The embodiment provides a semiconductor device in which a semiconductor layer that converts into a second light is disposed between an active layer that emits a first light and a first conductive or second conductive type semiconductor layer.

The embodiment provides a semiconductor device having a semiconductor layer which is wavelength-converted from the active layer for emitting the first light to the second light at a position spaced further from the first conductive type semiconductor layer.

The embodiment provides a semiconductor device which generates ultraviolet rays and converts them into infrared wavelengths.

The embodiment provides a semiconductor device having an active layer for generating ultraviolet rays and a semiconductor layer for converting to an infrared wavelength.

The embodiment provides a semiconductor device having an active layer for generating ultraviolet rays and a superlattice layer for converting to an infrared wavelength.

An embodiment provides a semiconductor device package having a semiconductor element that emits infrared light.

A semiconductor device according to an embodiment includes: a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; And a first semiconductor layer disposed in at least one of regions between the active layer and the first and second conductive semiconductor layers, wherein the first semiconductor layer includes a dopant for converting the first light emitted from the active layer into an infrared wavelength, . ≪ / RTI >

A semiconductor device according to an embodiment includes: a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; And a first semiconductor layer spaced from the active layer by a distance from the first conductive type semiconductor layer, wherein the first semiconductor layer has a plurality of layers having different semiconductors, and one of the plurality of layers May emit a second light including a dopant that excites the first light emitted from the active layer with a wavelength difference of 1000 nm or more.

A semiconductor device package according to an embodiment includes: a body having a cavity; A semiconductor element disposed in the cavity; And a transparent window on the cavity, the semiconductor element including: a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A second conductive semiconductor layer on the active layer; And a first semiconductor layer disposed in at least one of regions between the active layer and the first and second conductive semiconductor layers, wherein the first semiconductor layer includes a dopant for converting light emitted from the active layer into an infrared wavelength The dopant includes erbium, and the active layer emits ultraviolet light.

According to an embodiment, the first semiconductor layer comprises a first layer having a first dopant, and a second layer having a second dopant on the first layer, wherein the second dopant is dopant , And the dopant may include erbium (Er).

According to an embodiment of the present invention, the first conductive semiconductor layer includes an n-type semiconductor layer, and the first semiconductor layer may be disposed between the active layer and the first conductive semiconductor layer.

According to an embodiment of the present invention, the first semiconductor layer includes a superlattice structure in which the first layer and the second layer are alternately repeated, and the band gap of the second layer is smaller than the band gap of the first layer. .

According to an embodiment, the concentration of the second dopant added to the second layer may be higher than the concentration of the first dopant added to the first layer.

According to an embodiment, the first layer includes an AlGaN-based semiconductor, and the second layer may include GaN or an InGaN semiconductor.

According to an embodiment, the thickness of the first semiconductor layer may be larger than a wavelength emitted from the active layer and smaller than a wavelength emitted from the first semiconductor layer.

According to an embodiment, the active layer emits ultraviolet light in the range of 300 nm to 380 nm, and the first semiconductor layer can be converted into a wavelength in the range of 1100 nm to 2000 nm.

According to an embodiment of the present invention, an electron blocking layer is disposed between the active layer and the second conductive semiconductor layer, and the first semiconductor layer may be disposed between the electron blocking layer and the second conductive semiconductor layer.

According to the semiconductor device of the embodiment, defects transferred to the active layer can be removed.

The semiconductor device according to the embodiment has the effect of absorbing and removing defects of the semiconductor layer.

According to the semiconductor device according to the embodiment, the internal quantum efficiency can be improved.

The embodiment can provide an infrared chip with reduced wavelength absorption of ultraviolet rays.

The semiconductor device according to the embodiment can be provided as an infrared chip by converting an ultraviolet wavelength into an infrared wavelength and releasing it.

Embodiments can be applied to various lamps for medical, military, industrial, and industrial fields by using an infrared chip.

Embodiments can provide a semiconductor device package or an infrared lamp having an infrared semiconductor element.

1 is a view showing a semiconductor device according to a first embodiment.
FIG. 2 is a view showing band gaps between the first semiconductor layer and the active layer of FIG. 1;
Fig. 3 is a first modification of the semiconductor device of Fig.
4 is a second modification of the semiconductor device of Fig.
5 is a view showing a semiconductor device according to the second embodiment.
6 is a first example in which electrodes are arranged in the semiconductor device of FIG.
Fig. 7 is a second example in which electrodes are disposed in the semiconductor device of Fig.
Fig. 8 is a first example in which electrodes are arranged in the semiconductor device of Fig.
Fig. 9 is a second example in which electrodes are arranged in the semiconductor device of Fig.
10 is a cross-sectional view of the semiconductor device of FIG. 9 on the AA side.
11 is an example of a package having the semiconductor element of Fig.
12 is a graph showing emission wavelengths of semiconductor devices according to the embodiment.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below.

Although not described in the context of another embodiment, unless otherwise described or contradicted by the description in another embodiment, the description in relation to another embodiment may be understood.

For example, if the features of configuration A are described in a particular embodiment, and the features of configuration B are described in another embodiment, even if the embodiment in which configuration A and configuration B are combined is not explicitly described, It is to be understood that they fall within the scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include various electronic devices such as a light emitting device, a light receiving device, an optical modulator, and a gas sensor. Although the embodiment has been described by way of example of a gas sensor, the present invention is not limited thereto and can be applied to various fields of electric devices.

A semiconductor device according to an embodiment includes a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; A light emitting structure including a second conductive semiconductor layer on the active layer, and a first semiconductor layer having a dopant for wavelength conversion in the light emitting structure. The active layer may include a wavelength of 400 nm or less, for example, a wavelength in the range of 100 nm to 380 nm or 300 nm to 380 nm, and may emit light by wavelength conversion into light having a wavelength difference of 1000 nm or more than light emitted from the first semiconductor layer active layer. The first semiconductor layer may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The first semiconductor layer may emit near-infrared light or a wavelength of 1520 nm to 1560 nm as shown in FIG. These first semiconductor layers may be arranged in the light emitting structure in one or more. The first semiconductor layer may be disposed between the first conductivity type semiconductor layer and the active layer, or may be disposed between the second conductivity type semiconductor layer and the active layer. The first semiconductor layer may be disposed on the lower surface of the first conductive type semiconductor layer or on the upper surface of the second conductive type semiconductor layer. The first semiconductor layer may be disposed as a top layer of the semiconductor device, for example, a layer through which light is emitted. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps. Such a semiconductor device will be described in detail with reference to the embodiments described later.

<Semiconductor device>

FIG. 1 is a view showing a semiconductor device according to a first embodiment, and FIG. 2 is a diagram showing band gaps between the first semiconductor layer and the active layer in FIG.

1 and 2, a semiconductor device according to an embodiment of the present invention includes an active layer 51 for generating a first light L1 and a second light L2 for wavelength-converting the first light L1 The first semiconductor layer 41 may include a first semiconductor layer 41 and a second semiconductor layer 41. The semiconductor device may include a first conductive semiconductor layer 35, a first semiconductor layer 41, an active layer 51, and a second conductive semiconductor layer 71.

The semiconductor device may include a substrate 21, a buffer layer 25, and a conductive semiconductor layer 31. The buffer layer 25 and the conductive semiconductor layer 31 may be disposed on the substrate 21. The buffer layer 25 and the conductive semiconductor layer 31 may be disposed between the substrate 21 and the first conductivity type semiconductor layer 35.

The semiconductor device emits light having an infrared wavelength as shown in FIG. The first light L1 in the semiconductor device includes a wavelength of 400 nm or less, for example, a wavelength in the range of 100 nm to 380 nm or 300 nm to 380 nm, and the second light L2 has a wavelength difference of 1000 nm or more Lt; / RTI &gt; The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm as shown in FIG. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps.

&Lt; Substrate (21) >

The substrate 21 may be, for example, a translucent, conductive substrate or an insulating substrate. For example, the substrate 21 is AlN, Al ₂ O _3, SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga ₂ O ₃ Or the like. The substrate 21 may be, for example, an AlN template. A plurality of protrusions (not shown) may be formed on the top surface and / or bottom surface of the substrate 21, and each of the plurality of protrusions may include at least one of a hemispherical shape, a polygonal shape, and an elliptical shape, Or in the form of a matrix. The protrusions can improve the light extraction efficiency. The sapphire is a Hexa-Rhombo R3c symmetric crystal having lattice constants of 13.001 Å and 4.758 Å in the c-axis and a-axis directions, and has C (0001), A (1120) ) Face and the like. In this case, since the C-plane is relatively easy to grow the nitride film and is stable at high temperature, it is mainly used as a substrate for growing a nitride semiconductor.

The substrate 21 may have a thickness of 500 탆 or less, for example, in a range of 30 탆 to 500 탆, and the refractive index thereof may be 2.4 or less, for example, 2 or less. The lengths of adjacent sides of the substrate 21 may be the same or different, and the length of at least one side may be 0.3 mm x 0.3 mm or more, or may be provided in a size having a large area, for example, 1 mm x 1 mm or more . The substrate 20 may be formed in a polygonal shape such as a rectangular shape or a hexagonal shape when viewed from above, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the substrate 21. The plurality of compound semiconductor layers may be grown using an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD) A dual-type thermal evaporator, sputtering, metal organic chemical vapor deposition (MOCVD), or the like. However, the present invention is not limited thereto.

<Buffer layer 25>

The buffer layer 25 may include at least one of Group II-VI and Group III-V compound semiconductors. The buffer layer 25 may be disposed on the substrate 21. The buffer layer 25 may be formed of a compound semiconductor having a composition formula of Al _x In _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . The buffer layer 25 may include at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO.

The buffer layer 25 may include a nitride-based template, for example, a GaN template or an AlN-based template. The thickness of the buffer layer 25 may be smaller than the thickness of the first conductive type semiconductor layer 35. The buffer layer 25 may be formed in a range of 1 탆 or more, for example, 1 탆 to 3 탆. The buffer layer 25 may include an unintentional doping layer or an undoped layer. The buffer layer 25 may be a low-conductivity layer or a layer having a dopant content lower than that of the n-type semiconductor layer. The buffer layer 25 may function as a buffer between the substrate 21 and the conductive semiconductor layer 31 to improve the semiconductor crystal quality.

By disposing the buffer layer 25 as a GaN template on the substrate 21, it is possible to suppress cracks between the substrate 21 and the first conductivity type semiconductor layer 35 having aluminum. Since the buffer layer 25 is formed on the substrate 21 to have the above thickness, it is possible to reduce the propagation of defects due to the difference in lattice constant between the buffer layer 25 and the substrate 21. The substrate 21 and the buffer layer 25 may be removed. In order to separate the buffer layer 25, a substance having a large bandgap difference may face the interface between the buffer layer 25 and the conductive semiconductor layer 31.

&Lt; Conductive semiconductor layer 31 >

The conductive semiconductor layer 31 may be disposed on the buffer layer 25 or the substrate 21. The conductive semiconductor layer 31 may include at least one of Group II-VI and Group III-V compound semiconductors. The conductive semiconductor layer 31 is formed of a semiconductor layer using, for example, a Group III-V compound semiconductor, for example, an Al _x In _y Ga _(1-xy) N composition formula (0? X? 1, 0? _Y? x + y &lt; / = 1). The conductive semiconductor layer 31 may include at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO.

The conductive semiconductor layer 31 may include a dopant. The dopant may include an n-type dopant such as Si, Ge, Sn, Se, or Te. The conductive semiconductor layer 31 may be formed as a single layer or a multilayer, but the present invention is not limited thereto. The conductive semiconductor layer 31 may be formed of the same compound semiconductor material as the buffer layer 25. The conductive semiconductor layer 31 may be formed of a GaN-based semiconductor. The conductive semiconductor layer 31 may have no composition of aluminum or may have a composition lower than the aluminum composition of the first conductive type semiconductor layer 35. The conductive semiconductor layer 31 may include semiconductors or more semiconductors.

The conductive semiconductor layer 31 may be thicker than the buffer layer 21 and may be, for example, 3 탆 or less. The ratio of the thickness of the conductive semiconductor layer 31 to the thickness of the buffer layer 21 may be 1: 1.2 to 1: 2, and if the ratio difference is smaller than the above range, the defect propagates in the direction of the active layer 51 There is a problem. If it is larger than the above range, the improvement of the defect is insignificant and the absorption ratio of the wavelength can be increased.

The conductive semiconductor layer 31 may have a multi-layer structure, for example, one or a plurality of superlattice layers may be disposed. The conductive semiconductor layer 31 may be periodically stacked with at least two different layers as one pair. The conductive semiconductor layer 31 may be formed of, for example, a Group II-VI or a Group III-V compound semiconductor in one of the pairs, and the other layer may be, for example, a Group II- -V compound semiconductor. In the pair structure of the conductive semiconductor layer 31, the composition of aluminum of the two layers may be different from each other.

&Lt; First conductive type semiconductor layer 35 >

The first conductive semiconductor layer 35 may be disposed on the conductive semiconductor layer 31. The first conductive semiconductor layer 35 may be disposed between the substrate 21 and the active layer 51 or between the conductive semiconductor layer 31 and the active layer 51. The first conductive semiconductor layer 35 may be disposed between the conductive semiconductor layer 31 and the first semiconductor layer 41.

The first conductive semiconductor layer 35 may be in contact with the upper surface of the conductive semiconductor layer 31. The first conductive semiconductor layer 35 may be in contact with the lower surface of the first semiconductor layer 41. The first conductive semiconductor layer 35 may be spaced apart from or in contact with the active layer 51.

The first conductive semiconductor layer 35 may be an electrode contact layer in which electrodes are in contact with each other. The first conductivity type semiconductor layer 35 may be formed of a semiconductor layer using, for example, a Group III-V compound semiconductor such as Al _x In _y Ga _(1-xy) N composition formula (0 < x < , 0 &lt; x + y &lt; 1). The first conductive semiconductor layer 35 may include at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO have. The first conductive semiconductor layer 35 may include, for example, an AlGaN-based semiconductor having a composition of aluminum. Accordingly, wavelength absorption of the first light L1 emitted through the active layer 51 can be reduced.

The first conductive semiconductor layer 35 may have a multi-layer structure, for example, one or a plurality of superlattice layers may be disposed. The first conductive semiconductor layer 35 may be periodically stacked with at least two different layers as one pair. The first conductive semiconductor layer 35 may be formed of a Group II-VI compound semiconductor or a Group III-V compound semiconductor, for example, Or a Group III-V compound semiconductor, and the compositions of the two layers of aluminum may be different from each other.

The thickness of the first conductive semiconductor layer 35 may be greater than the thickness of the conductive semiconductor layer 31. The first conductive semiconductor layer 35 having such a thickness can diffuse and supply a current injected through the electrode.

&Lt; First semiconductor layer 41 >

The first semiconductor layer 41 may include a structure in which layers of different media are stacked. If the first semiconductor layer 41 is a pair of two different layers, one of each pair may be implemented as a Group II-VI or III-V compound semiconductor, for example. The layer may be implemented, for example, as a Group II-VI or III-V compound semiconductor. The first semiconductor layer 41 may include a superlattice structure.

The first semiconductor layer 41 may be disposed between the active layer 51 and the first conductive semiconductor layer 35. The first semiconductor layer 41 may be in contact with or not in contact with the active layer 51. The distance between the first semiconductor layer 41 and the active layer 51 may be in the range of 0.01 탆 to 4 탆. When the first semiconductor layer 41 is out of the above range from the active layer 51, the light intensity of the wavelength-converted light may be lowered.

The first semiconductor layer 41 may be periodically repeated at least two or three layers of semiconductor layers, and at least one layer may include a dopant for wavelength conversion. The first semiconductor layer 41 includes for example a first layer 11 and a second layer 12 and a pair of the first layer 11 and the second layer 12 is periodically And may include more than 60 pairs, such as 60 pairs to 150 pairs or 65 to 125 pairs. The first layer 11 or the second layer 12 may be disposed first in the first semiconductor layer 41 and the last layer may be the first layer 11 or the second layer 12 .

The first and second layers 11 and 12 may be formed of two or more different semiconductors or semiconductors. The first layer 11 may include semiconductors or more semiconductors, A binary or ternary system semiconductor. The first layer 11 may include an AlGaN-based or AlGaN material, and the second layer 12 may include GaN or InGaN.

The band gap G1 of the first layer 11 may be wider than the band gap G5 of the barrier layer 15 of the active layer 51 as shown in FIG. The band gap G2 of the second layer 12 may be narrower than the band gap G6 of the well layer 16 of the active layer 51. [ The band gap G1 of the first layer 11 may be wider than the band gap of the first conductive type semiconductor layer 35. [ The composition of aluminum in the first layer 11 may be larger than the composition of aluminum in the first conductivity type semiconductor layer 35. The first layer 11 and the first conductivity type semiconductor layer 35 may be narrower than the band gap G5 of the barrier layer 16 of the active layer 51. [ The Al composition of the first layer 12 and the first conductivity type semiconductor layer 35 may be smaller than the Al composition of the barrier layer 15 when the barrier layer 15 of the active layer 51 is AlGaN have. The first layer 11 may have a composition formula of an Al _x Ga _(1-x) N composition formula (0.05 < _x ? 0.12). When the composition of aluminum in the first layer 11 is less than 5% The suppression of the tensile stress propagated in the direction of the active layer 51 can be reduced and the electron diffusion effect can be reduced, and if it exceeds 12%, the semiconductor crystal quality can be lowered.

The embodiment is characterized in that when the second layer 12 is grown in the first semiconductor layer 41 after the growth of the first layer 11, an elongational stress is applied, and after the second layer 12 is grown, The tensile stress is applied when the substrate 11 is grown. The first and second layers 11 and 12 in which the tensile stress and the tensile stress are generated are repeatedly canceled each other at the time of growth. The first semiconductor layer 41 can cancel out the stress propagating in the direction of the active layer 51 from the substrate 21 through the compressive stress and the tensile stress, and can reduce the occurrence of cracks and defects.

The thickness of the first layer 11 may be in a range of 10 nm or less and 2 nm to 4 nm. When the thickness of the first layer 11 is larger than 4 nm, the carrier injection efficiency may be lowered, and when the thickness is smaller than 2 nm, a defect density such as stress or threading dislocation may be increased. The thickness of the second layer 12 may be 10 nm or less, for example, in the range of 2 nm to 4 nm. If the thickness of the second layer 12 is thicker than 4 nm, the carrier injection efficiency may decrease, There is a problem that carrier restraint is difficult.

The first semiconductor layer 41 may be thinner than the first conductive semiconductor layer 35. The thickness of the first semiconductor layer 41 may be in the range of 500 nm or more, for example, 500 nm to 1000 nm. If the thickness is smaller than the above range, the wavelength conversion efficiency is lowered. If the thickness is larger than the above range, have. The wavelength emitted from the first semiconductor layer 41 may be a wavelength smaller than the thickness of the first conductive semiconductor layer 35 and greater than a thickness of the first semiconductor layer 41.

The first layer 11 may comprise a first dopant and the second layer 12 may comprise a second dopant. The first and second dopants may include a dopant of the first conductivity type. The first dopant added to the first layer 11 may include, for example, dopants such as Si, Ge, Sn, Se, and Te. The second dopant added to the second layer 12 may include indium (Er). The second dopant may include at least one of Group IV elements for wavelength-converting the light generated in the active layer 51. The second layer 12 of the first semiconductor layer 41 may emit the second light L2 by wavelength-converting the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm.

The first dopant concentration of the first layer 11 is 5 × 10E18 / cm ³ For example, the concentration of the second dopant. For example, the first dopant concentration is ³ ~ 4 × 10E18 / cm 3 And if it is larger than the above range, the semiconductor crystal quality may be deteriorated.

The second dopant concentration of the second layer 12 can range from 5 × 10E18 / cm ³ or more 5 × 10E18 / cm ³ to 5 × 10E19 / cm ^3. When the concentration of the second dopant in the second layer 12 is smaller than the above range, the wavelength conversion efficiency is low. When the concentration is larger than the above range, doping is difficult.

The first semiconductor layer 41 may emit the second light L2. The second light L2 may have an infrared wavelength. The first semiconductor layer 41 wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The first light L1 may include ultraviolet light. The second layer 12 of the first semiconductor layer 41 may emit the second light L2. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. The first semiconductor layer 41 according to the embodiment wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The second light L2 may have a wavelength difference of 1000 nm or more with respect to the first light L1.

&Lt; Active layer (51) >

The active layer 51 may be disposed on the first conductive semiconductor layer 35. The active layer 51 may generate an ultraviolet wavelength. The active layer 51 may generate a wavelength of 100 nm to 380 nm or 300 nm to 380 nm.

The active layer 51 may be formed of at least one of a single well, a single quantum well, a multi-well, a multi quantum well (MQW), a quantum-wire structure, or a quantum dot structure . Electrons (or holes) injected through the first conductive type semiconductor layer 35 and holes (or electrons) injected through the second conductive type semiconductor layer 71 meet with each other in the active layer 51, And is a layer that emits light due to a band gap difference of an energy band according to a material of the active layer 51. [ The active layer 51 may be formed of a compound semiconductor. The active layer 51 may be formed of at least one of Group II-VI and Group III-V compound semiconductors.

When the active layer 51 is implemented as a multi-well structure, the active layer 51 includes a plurality of well layers 16 and a plurality of barrier layers 15, as shown in FIG. In the active layer 51, a well layer 16 and a barrier layer 15 are alternately arranged. The pair of the well layer 16 and the barrier layer 1 15 may be formed in 2 to 30 cycles. The well layer 16 is disposed in a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? 1) . The barrier layer 15 is formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? . InGaN / AlGaN, InGaN / InGaN, InGaN / InGaN, AlGaAs / GaAs, InGaAs / GaAs, InGaP / GaP, AlInGaP / InGaP, InGaN / AlGaN, InGaN / AlGaN, / GaAs. &Lt; / RTI &gt;

The well layer 16 of the active layer 51 according to the embodiment may be formed of AlGaN, and the barrier layer 15 may be formed of AlGaN. The active layer 51 may emit ultraviolet light and emit light in the range of 300 nm to 380 nm, for example. The aluminum composition of the barrier layer (15) is higher than the composition of aluminum of the well layer (16). The first layer B1 disposed in the active layer 51 may be the barrier layer 15 or the well layer 16 and is not limited thereto. Other semiconductor layers may be further disposed on and / or below the active layer 51, for example, an AlN-based or AlGaN-based semiconductor may be disposed.

&Lt; Electron barrier layer 61 >

The semiconductor device may include an electron blocking layer 61. The electron blocking layer 61 may be disposed between the active layer 51 and the second conductive semiconductor layer 71. The electron blocking layer 61 may be disposed on the active layer 51 to block electrons. The electron blocking layer 61 may be formed of AlGaN semiconductor and may have a composition of aluminum higher than that of the barrier layer 14 of the active layer 51 as shown in FIG. The composition of aluminum in the electron blocking layer 61 may be 15% or more. As shown in FIG. 2, the electron blocking layer 61 may have a bandgap G6 that is wider than the bandgap G4 or G5 of the active layer 51, and may be a single layer or a multilayer. The multi-layered electron blocking layer 61 may include a semiconductor layer having a different composition of aluminum.

&Lt; Second conductive type semiconductor layer 71 >

The second conductivity type semiconductor layer 71 is disposed on the electron blocking layer 61. The second conductive semiconductor layer 71 may include an AlGaN-based semiconductor. The second conductivity type semiconductor layer 71 may be a p-type semiconductor layer having a second conductivity type dopant, for example, a p-type dopant. As another example, the second conductive semiconductor layer 71 may include at least one of GaN, AlN, InAlGaN, AlInN, AlGaAs, and AlGaInP, and may be a p-type dopant such as Mg, Zn, Ca, . &Lt; / RTI &gt; The second conductivity type semiconductor layer 71 may be disposed of an AlGaN-based semiconductor in order to prevent absorption of ultraviolet wavelengths. The second conductivity type semiconductor layer 71 may be a multi-layered structure, but is not limited thereto.

In the embodiment, the first conductivity type is n-type and the second conductivity type is p-type. As another example, the first conductivity type may be p-type and the second conductivity type may be n-type. Alternatively, the semiconductor device may include any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The structure from the first conductivity type semiconductor layer 35 or the conductive semiconductor layer 31 to the second conductivity type semiconductor layer 71 can be defined as the light emitting structure 50. Layers capable of generating different wavelengths having a wavelength difference of 1000 nm or more can be disposed in the light emitting structure 50. The embodiment provides one active layer 51 in the light emitting structure 50 and the active layer 51 adjacent to the active layer 51 A first semiconductor layer 41 for wavelength conversion of the first light L1 generated in the active layer 51 into the second light L2 is disposed in a region of the active layer 51 to emit the second light L2, .

The first conductive semiconductor layer 35 may be electrically connected to the first electrode to receive power, and the second conductive semiconductor layer 71 may be electrically connected to the second electrode to receive power . Such a semiconductor device converts the wavelength of the first light L1 generated in the active layer 51 and emits it as the second light L2. The semiconductor device converts the ultraviolet light generated in the active layer 51 into a wavelength-converted ultraviolet light.

The embodiment can provide a new infrared lamp by disposing the first semiconductor layer 41 for converting the infrared wavelength in the light emitting structure having ultraviolet light having a high energy intensity.

In the embodiment, the first semiconductor layer 41 may be provided as a conversion layer of an infrared wavelength below the active layer 51. Since the stress between the first and second layers 11 and 12 of the first semiconductor layer 41 are canceled each other, defects transmitted to the active layer 51 can be reduced, and the internal quantum efficiency can be improved. The embodiment provides the composition of aluminum of the first layer 11 of the first semiconductor layer 41 in the range of 5% or more, for example, 5% to 12%, thereby suppressing the tensile stress propagated in the direction of the active layer 51 Carriers can be diffused and the quality of the semiconductor crystal can be lowered. The thickness of the first and second layers 11 and 12 of the first semiconductor layer 41 may be 5 nm or less to prevent the wavelength conversion efficiency from being lowered and improve the carrier injection efficiency.

The wavelength conversion efficiency and the semiconductor crystal quality can be improved by the first dopant concentration of the first layer 11 of the first semiconductor layer 41 and the second dopant concentration of the second layer 12. [ The thickness of the first semiconductor layer 41 is smaller than the wavelength of the second light L2 emitted from the first semiconductor layer 41 and is smaller than the wavelength of the first light L1 generated in the active layer 51. [ It can be arranged large.

The first semiconductor layer 41 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The first semiconductor layer 41 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. The first semiconductor layer 41 according to the embodiment wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The second light L2 may have a wavelength difference of 1000 nm or more with respect to the first light L1.

Fig. 3 is a first modification of the semiconductor device of Fig. In describing Fig. 3, the same components as those described above will be described with reference to the above description, and the above configuration can be selectively applied.

Referring to FIG. 3, in the semiconductor device of the embodiment, the first semiconductor layer 41 disclosed in the embodiment may be disposed between the conductive semiconductor layer 31 and the first conductive type semiconductor layer 35A. The first semiconductor layer 41 may be in contact with the conductive semiconductor layer 31 and the first conductive type semiconductor layer 35A. The first conductive semiconductor layer 35A is the same layer as the layer 35 and may be an electrode contact layer. As another example, the conductive semiconductor layer 31 may be an electrode contact layer, but the present invention is not limited thereto.

The first semiconductor layer 41 may not be in contact with the active layer 51. The distance between the first semiconductor layer 41 and the active layer 51 may be in the range of 1 to 4 mu m. When the first conductive semiconductor layer 35A is an AlGaN-based semiconductor, absorption loss of light is reduced, so that it is possible to prevent the light intensity of light incident on or emitted from the first semiconductor layer 41 from being low.

The first semiconductor layer 41 includes for example a first layer 11 and a second layer 12 and a pair of the first layer 11 and the second layer 12 is periodically And may include more than 60 pairs, such as 60 pairs to 150 pairs or 65 to 125 pairs. The first layer 11 may include an AlGaN-based or AlGaN material, and the second layer 12 may include GaN or InGaN. The composition of aluminum in the first layer 11 may be larger than the composition of aluminum in the first conductive type semiconductor layer 35A. The first layer 11 may have a composition formula of an Al _x Ga _(1-x) N composition formula (0.05 < _x ? 0.12). When the composition of aluminum in the first layer 11 is less than 5% The suppression of the tensile stress propagated in the direction of the active layer 51 can be reduced and the electron diffusion effect can be reduced, and if it exceeds 12%, the semiconductor crystal quality can be lowered.

The thickness of the first layer 11 may be in a range of 10 nm or less and 2 nm to 4 nm. When the thickness of the first layer 11 is larger than 4 nm, the carrier injection efficiency may be lowered, and when the thickness is smaller than 2 nm, a defect density such as stress or threading dislocation may be increased. The thickness of the second layer 12 may be 10 nm or less, for example, in the range of 2 nm to 4 nm. If the thickness of the second layer 12 is thicker than 4 nm, the carrier injection efficiency may decrease, There is a problem that carrier restraint is difficult.

The first semiconductor layer 41 may be thinner than the first conductive semiconductor layer 35A. The thickness of the first semiconductor layer 41 may be in the range of 500 nm or more, for example, 500 nm to 1000 nm. If the thickness is smaller than the above range, the wavelength conversion efficiency is lowered. If the thickness is larger than the above range, have. The wavelength emitted from the first semiconductor layer 41 may be a wavelength smaller than the thickness of the first conductive type semiconductor layer 35A and larger than the thickness of the first semiconductor layer 41. [

The first layer 11 may comprise a first dopant and the second layer 12 may comprise a second dopant. The first and second dopants may include a dopant of the first conductivity type. The first dopant added to the first layer 11 may include, for example, dopants such as Si, Ge, Sn, Se, and Te. The second dopant added to the second layer 12 may include indium (Er). The second dopant may include at least one of Group IV elements for wavelength-converting the light generated in the active layer 51. The second layer 12 of the first semiconductor layer 41 may emit the second light L2 by wavelength-converting the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm.

The first dopant concentration of the first layer 11 is 5 × 10E18 / cm ³ For example, the concentration of the second dopant. For example, the first dopant concentration is ³ ~ 4 × 10E18 / cm 3 And if it is larger than the above range, the semiconductor crystal quality may be deteriorated. The second dopant concentration of the second layer 12 can range from 5 × 10E18 / cm ³ or more 5 × 10E18 / cm ³ to 5 × 10E19 / cm ^3. When the concentration of the second dopant in the second layer 12 is smaller than the above range, the wavelength conversion efficiency is low. When the concentration is larger than the above range, doping is difficult.

The first semiconductor layer 41 may emit the second light L2. The second light L2 may have an infrared wavelength. The first semiconductor layer 41 wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The first light L1 may include ultraviolet light. The second layer 12 of the first semiconductor layer 41 may emit the second light L2. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. The first semiconductor layer 41 according to the embodiment wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The second light L2 may have a wavelength difference of 1000 nm or more with respect to the first light L1.

1 and 3, an example in which the first semiconductor layer 41, which is one wavelength conversion layer, is disposed between the substrate 21 and the active layer 51 is described. However, the substrate 21 and the active layer 51, The first semiconductor layer 41 disclosed in the embodiment can be disposed at different positions between the first semiconductor layer 41 and the second semiconductor layer 41. [

4 is a first modification of the semiconductor device of FIG. In describing FIG. 4, the same parts as those in FIG. 1 will be described with reference to the above description, and the above configuration can be selectively applied.

Referring to FIG. 4, in the semiconductor device of the embodiment, the first semiconductor layer 65 disclosed in the embodiment may be disposed between the electron blocking layer 611 and the second conductivity type semiconductor layer 71. The first semiconductor layer 65 may be in contact with the electron blocking layer 61 and the second conductivity type semiconductor layer 71. The electron blocking layer 61 is formed of an AlGaN-based semiconductor and shields electrons, so that the wavelength absorption loss can be reduced. Accordingly, it is possible to prevent the light intensity of the light incident on or emitted from the first semiconductor layer 65 from being low.

The first semiconductor layer 65 may not be in contact with the active layer 51. The distance of the first semiconductor layer 65 from the active layer 51 can be set within a range of 0.01 탆 to 1 탆.

The first semiconductor layer 65 includes, for example, a first layer 11A and a second layer 12A, and a pair of the first layer 11A and the second layer 12A is periodically And may include more than 60 pairs, such as 60 pairs to 150 pairs or 65 to 125 pairs. The first layer 11A may include an AlGaN-based or AlGaN material, and the second layer 12A may include GaN or InGaN. The first layer 11A may have a composition formula of an Al _x Ga _(1-x) N composition formula (0.05 < _x ? 0.12), for example.

The thickness of the first layer 11A may be 10 nm or less, for example, 2 nm to 4 nm, and the thickness of the second layer 12A may be 10 nm or less and 2 nm to 4 nm. The first semiconductor layer 65 may be thinner than the first conductive semiconductor layer 35. The thickness of the first semiconductor layer 65 may be in a range of 500 nm or more, for example, 500 nm to 1000 nm. When the thickness is smaller than the above range, the wavelength conversion efficiency is lowered. If the thickness is larger than the above range, have.

The first layer 11A may include a first dopant, and the second layer 12A may include a second dopant. The first dopant may include a p-type dopant such as a second conductivity type dopant such as Mg, Zn, Ca, Sr, or Ba. The first dopant concentration may be 5 × 10 18 / cm ³ For example, the concentration of the second dopant. The second dopant may include erbium, and the second dopant may include at least one of a group IV element for wavelength-converting the light generated in the active layer 51. The second dopant concentration of the second layer (12A) can range from 5 × 10E18 / cm ³ or more 5 × 10E18 / cm ³ to 5 × 10E19 / cm ^3. When the concentration of the second dopant in the second layer 12A is smaller than the above range, the wavelength conversion efficiency is low. When the concentration is larger than the above range, doping is difficult.

The first semiconductor layer 65 may emit the second light L2. The second light L2 may have an infrared wavelength. The first semiconductor layer 65 wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L1 as the second light L2. The first light L1 may include ultraviolet light. The second layer 12A of the first semiconductor layer 65 may emit the second light L2. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. The first semiconductor layer 65 according to the embodiment wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The second light L2 may have a wavelength difference of 1000 nm or more with respect to the first light L1.

5 is a view showing a semiconductor device according to the second embodiment. In describing Fig. 5, the same configurations as those of Figs. 1 and 2 disclosed above are referred to the description of Figs. 1 and 2, and the configurations of Figs. 1 and 2 can be selectively applied.

Referring to FIG. 5, the semiconductor device may include a through potential T1 and a recess V1 in the light emitting structure 50. The semiconductor device includes a first conductive type semiconductor layer 36 in which a recess V1 is disposed, a first semiconductor layer 41 described in the embodiment, an active layer 51, an electron blocking layer 62, Type semiconductor layer (72).

The semiconductor device may include the substrate 21, the buffer layer 25, and the conductive semiconductor layer 31 disclosed in the embodiment. The buffer layer 25 and the conductive semiconductor layer 31 may be propagated through a potential T1.

The surface of the semiconductor element, for example, the surface of the second conductivity type semiconductor layer 72, may be exposed to the recess V1 inside the recess or the recess 72B on the pit. These recesses 72B may be partially exposed or removed through the filling of the recesses V1 or pits generated in the light emitting structure 50. [

The first conductive semiconductor layer 36 may be formed of a semiconductor layer using, for example, a Group III-V compound semiconductor such as Al _x In _y Ga _(1-xy) N composition formula (0? X? 1, 0? _Y? , 0? X + y? 1). The first conductive semiconductor layer 36 may include at least one of materials such as GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and ZnO have. The first conductive semiconductor layer 36 may include a dopant. The dopant may include an n-type dopant such as Si, Ge, Sn, Se, or Te. The conductive semiconductor layer 31 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The first conductive semiconductor layer 36 includes a plurality of first recesses V1, and the plurality of first recesses V1 may have a V-shaped cross section or an inclined plane. The top view shape of the plurality of first recesses V1 may be circular or polygonal. The first recess V1 may be defined as a V-shaped recess or pit, but is not limited thereto. The side surface of the first recess (V1) may have a gradually lower height from the top to the bottom. The width of the first recess V1 may gradually increase toward the upper portion. The width of the first recess (V1) may be gradually narrower toward the bottom. The width direction may be a horizontal direction on an upper surface or a lower surface of the first conductivity type semiconductor layer 36.

At least one of the plurality of first recesses V1 may be connected to one or a plurality of potentials T1. That is, the first recess V1 may be generated on the region where the potential T1 is exposed. Each of the first recesses (V1) has a letter V-shaped cross-section and may have a hexagonal or circular planar shape. The first recess V1 disposed in the first conductive semiconductor layer 36 may be formed to extend from the potential T1, and the width may gradually increase as it goes up. The width of the first recesses V1 becomes larger as the thickness of the first conductivity type semiconductor layer 36 increases. The inclined face or the crystal face of the first recess (V1) may have a range of 35 degrees to 60 degrees with respect to a horizontal axis.

The first semiconductor layer 41 may be disposed on the first conductive semiconductor layer 36. The first semiconductor layer 41 may extend a plurality of first recesses V1. The first semiconductor layer 41 may hold the first recess V1 or may widen the width of the first recess V1. The first semiconductor layer 41 may function to block a potential that is propagated through regions other than the region where the first recesses V1 propagate. The first semiconductor layer 41 may extend through the first recess V1 and have a hole in the region of the first recess V1.

The first semiconductor layer 41 includes the same structure as that of the first semiconductor layer 41 shown in FIGS. 1 and 2, and may optionally include the above description and configuration. The first semiconductor layer 41 includes for example a first layer 11 and a second layer 12 and a pair of the first layer 11 and the second layer 12 is periodically And may include more than 60 pairs, such as 60 pairs to 150 pairs or 65 to 125 pairs. The first layer 11 may have a composition formula of an Al _x Ga _(1-x) N composition formula (0.05 < _x ? 0.12). When the composition of aluminum in the first layer 11 is less than 5% The suppression of the tensile stress propagated in the direction of the active layer 51 can be reduced and the electron diffusion effect can be reduced, and if it exceeds 12%, the semiconductor crystal quality can be lowered. The second layer 12 may include GaN or InGaN material. The stretching stress and the tensile stress are offset from each other as the first and second layers 11 and 12 grow. The first semiconductor layer 41 can cancel out the stress propagating in the direction of the active layer 51 from the substrate 21 through the compressive stress and the tensile stress, and can reduce the occurrence of cracks and defects. As a result, defects in regions other than the recesses V1 can be removed.

The thickness of the first layer 11 may be in a range of 10 nm or less and 2 nm to 4 nm. When the thickness of the first layer 11 is larger than 4 nm, the carrier injection efficiency may be lowered, and when the thickness is smaller than 2 nm, a defect density such as stress or threading dislocation may be increased. The thickness of the second layer 12 may be 10 nm or less, for example, in the range of 2 nm to 4 nm. If the thickness of the second layer 12 is thicker than 4 nm, the carrier injection efficiency may decrease, There is a problem that carrier restraint is difficult.

The first semiconductor layer 41 may be thinner than the first conductive semiconductor layer 35. The thickness of the first semiconductor layer 41 may be in the range of 500 nm or more, for example, 500 nm to 1000 nm. If the thickness is smaller than the above range, the wavelength conversion efficiency is lowered. If the thickness is larger than the above range, have. The wavelength emitted from the first semiconductor layer 41 may be a wavelength smaller than the thickness of the first conductive semiconductor layer 35 and greater than a thickness of the first semiconductor layer 41.

The first layer 11 may comprise a first dopant and the second layer 12 may comprise a second dopant. The first and second dopants may include a dopant of the first conductivity type. The first dopant added to the first layer 11 may include, for example, dopants such as Si, Ge, Sn, Se, and Te. The second dopant added to the second layer 12 may include indium (Er). The second dopant may include at least one of Group IV elements for wavelength-converting the light generated in the active layer 51. The second layer 12 of the first semiconductor layer 41 may emit the second light L2 by wavelength-converting the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm.

The first dopant concentration of the first layer 11 is 5 × 10E18 / cm ³ For example, the concentration of the second dopant. For example, the first dopant concentration is ³ ~ 4 × 10E18 / cm 3 And if it is larger than the above range, the semiconductor crystal quality may be deteriorated.

The second dopant concentration of the second layer 12 can range from 5 × 10E18 / cm ³ or more 5 × 10E18 / cm ³ to 5 × 10E19 / cm ^3. When the concentration of the second dopant in the second layer 12 is smaller than the above range, the wavelength conversion efficiency is low. When the concentration is larger than the above range, doping is difficult.

The first semiconductor layer 41 may emit the second light L2. The second light L2 may have an infrared wavelength. The first semiconductor layer 41 wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The first light L1 may include ultraviolet light. The second layer 12 of the first semiconductor layer 41 may emit the second light L2. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. The first semiconductor layer 41 according to the embodiment wavelength-converts the first light L1 generated in the active layer 51 and emits the second light L2 as a second light L2. The second light L2 may have a wavelength difference of 1000 nm or more with respect to the first light L1.

A portion 51A of the active layer 51 may extend on the recesses V1 of the first semiconductor layer 41 and the first conductivity type semiconductor layer 36. [ The thickness of the portion 51 may be thinner than the thickness of the active layer 51. The active layer 51 may emit ultraviolet light having a wavelength of, for example, 400 nm or less, in a range of 100 nm to 300 nm or a range of 300 nm to 380 nm. The structure of the active layer 51 will be described with reference to FIGS.

The electron blocking layer 62 is disposed on the active layer 51 to block electrons traveling through the active layer 51. The electron blocking layer 62 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, doped with a dopant of the second conductivity type. The electron blocking layer 62 is made of, for example, a p-type semiconductor layer having a semiconductor having a composition formula of In _x Al _y Ga _1-xy N (0? X? 1, 0 & As shown in FIG. A portion 62A of the electron blocking layer 62 may be disposed on the recess V1 to inhibit propagation of the recesses V1. The surface of the part 62A may be formed in the form of a recess (V2) like the recess V1. When the recesses V1 are exposed to the surface of the semiconductor element, ESD may be affected. Therefore, the electron blocking layer 62 can be formed in a horizontal growth mode for removing the recesses V1. A part of the recess V1 may be propagated in the electron blocking layer 62, but the present invention is not limited thereto.

The electron blocking layer 62 may be formed as a single layer or a multilayer. When the electron blocking layer 62 has a multilayer structure, the superlattice structure may include a superlattice structure of AlGaN / AlGaN or a superlattice structure of AlGaN / GaN. The superlattice structure of the electron blocking layer 62 may protect the active layer 51 by diffusing a current contained in the voltage abnormally.

The second conductive semiconductor layer 72 may be formed of at least one compound semiconductor of Group III-V or Group II-VII elements. The second conductivity type semiconductor layer 72 may be a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + As shown in FIG. The second conductive semiconductor layer 72 may include at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductive semiconductor layer 72 may be a p-type semiconductor layer having a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 72 may be a single layer or a multilayer.

The second conductive semiconductor layer 72 may have a protruding portion 72A protruding to a region corresponding to the recess V1 and the protruding portion 72A may fill the recesses V1 and V2. Since the protrusions 72A cover the recesses V1 and V2, the recesses 72B corresponding to recesses appearing on the surface of the second conductivity type semiconductor layer 72 can be reduced in depth. A recess 72B may be formed on a surface of the second conductive semiconductor layer 72 in a region corresponding to the first recess V1. The semiconductor device can have a plurality of first recesses (V1) therein, and the density of the threading dislocations is lowered to 1E8 / cm2 or less to provide a high-quality template, reduce the operating voltage, Can be improved.

Since the first semiconductor layer 41 has the recess V1 or is disposed at a position where the recess V1 is extended, the light converted by the first dopant in the first semiconductor layer 41 is emitted to the recesses V1 and V2 And then reflected and extracted through the surface of the substrate.

6 is an example in which electrodes are arranged in the semiconductor device of FIG. In describing Fig. 6, the same parts as those described above are referred to above and can be selectively applied. 6 is a structure in which the substrate and the buffer layer of Fig. 1 are removed and arranged.

6, the semiconductor device may include a first electrode 170 connected to the first conductive semiconductor layer 35 and a second electrode 150 connected to the second conductive semiconductor layer 71 .

A protective layer 190 is disposed on the surface of the light emitting structure 31-71 and the protective layer 190 protects the side surfaces and the top surface of the light emitting structure 31-71. The material of the passivation layer 190 may be formed of a material having a refractive index, for example, a refractive index lower than 2.4, of the III-V group compound semiconductor layer as a light transmitting material. The protective layer 190 may be formed of a material selected from the group consisting of SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ , but is not limited thereto.

The pad 151 may be disposed outside the side surface of the light emitting structure 31-71. The pad 151 may not be formed. The pads 151 may be arranged in one or more than one. The pad 151 may include at least one of an alloy of any one or a plurality of materials selected from the group consisting of Cr, Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, And may be formed as a single layer or a multilayer, but is not limited thereto.

A second electrode 150 may be disposed under the second conductive semiconductor layer 71 and a second electrode 170 may be disposed under the first electrode 150.

The second electrode 150 may include a conductive layer 148, a reflective layer 152, and a diffusion layer 154. The conductive layer 148 includes at least one conductive material, and may be a single layer or a multilayer. The conductive layer 148 may have an ohmic characteristic and may be in contact with the second conductive semiconductor layer 130 in a layer or a pattern. The material of the conductive layer 148 may include at least one of a metal, a metal oxide, and a metal nitride material. The conductive layer 148 may be formed of a conductive material such as ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO oxide, IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, / Au / ITO, Pt, Ni, Au, Rh, and Pd. The conductive layer 148 may be formed of one or more layers selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, . The reflective layer 152 may include one or more layers selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, Layer. A diffusion layer 154 is disposed under the reflective layer 152 and the diffusion layer 154 is made of a material having good electrical conductivity such as Sn, Ga, In, Bi, Cu, Ni, Ag, Mo And at least one of Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si and their alloys. The diffusion layer 154 may function as a current diffusion layer. The contact portion 154A of the diffusion layer 154 may be disposed closer to the second conductivity type semiconductor layer 71 than other regions and contact the lower surface of the second conductivity type semiconductor layer 71. [ A pad 151 may be disposed on the outer side of the contact portion 154A of the diffusion layer 154. [ The contact portion 154A of the diffusion layer 154 may be in contact with the side surfaces of the conductive layer 148 and the reflective layer 152. [ The second electrode 150 electrically connects the pad 115 and the second conductive semiconductor layer 130.

An insulating layer 162 is formed on the second electrode 150 and a portion 163 of the insulating layer 162 is disposed in the hole 161. The second electrode 150 and the light emitting structure 41 -71). &Lt; / RTI &gt; A portion 163 of the insulating layer 162 is filled in the hole 161, and then the hole can be drilled again with the drill. The extended portion 162A of the insulating layer 162 may be formed on the side of the contact portion 154A of the diffusion layer 154A.

The first electrode 170 includes a first electrode layer 172, a bonding layer 176, and a support layer 178. The first electrode layer 172 includes at least one of an ohmic contact layer, a reflective layer, and a bonding layer. The first electrode layer 172 may include at least one of a metal, a metal oxide and a metal nitride. Examples of the first electrode layer 172 include ITO (indium tin oxide), IZO (indium zinc oxide), IZON (IZO nitride) oxide, indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO) RuOx, ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Cr, Ti, Co, Ge, Cu, Ag, Ni, Al, Rh, Pd, Ir, Ru, , Au, Hf and a material composed of two or more of these alloys.

The first electrode layer 172 includes a contact electrode 173 and at least one of the contact electrode 173 from the first electrode layer 172 is electrically connected to the second conductivity type semiconductor layer 71 and the active layer 51 And is in contact with the inside of the first conductivity type semiconductor layer 35. The contact electrode 173 of the first electrode layer 172 protrudes in a direction perpendicular to the second electrode 150 and the peripheral surface thereof may be a vertical surface or a sloped surface. The contact electrode 173 may have a circular or polygonal shape when viewed from above, but the present invention is not limited thereto.

The upper surface of the contact electrode 173 of the first electrode layer 172 may be disposed between the upper surface of the active layer 51 and the upper surface of the first conductive type semiconductor layer 35. The inside of the first conductivity type semiconductor layer 35 in contact with the contact electrode 173 of the first electrode layer 172 may have a flat structure or a concavo-convex structure, but the present invention is not limited thereto. The first electrode layer 172 may have a plurality of contact electrodes 173 and may be spaced apart from each other to diffuse current. The contact electrode 173 may be connected to the first conductive semiconductor layer 35 through the first semiconductor layer 41 in which the hole 161 is disposed. The first semiconductor layer 41 wavelength-converts the first light L1 emitted from the active layer 51 and emits the second light L2 having an infrared wavelength. The second light L2 may be emitted through the first conductive semiconductor layer 35, the conductive semiconductor layer 31, and the passivation layer 190. The protective layer 190 may be removed. The upper surface 31A of the conductive semiconductor layer 31 may include a rough light extraction structure.

The bonding layer 176 is disposed under the first electrode layer 172 and the supporting layer 178 is disposed under the bonding layer 176. The bonding layer 176 includes at least one metal layer or conductive layer, and includes a barrier metal and / or a bonding metal. The material of the bonding layer 176 may be selected from the group consisting of Sn, Ga, In, Bi, Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, , Al-Si, Ag-Cd, Au-Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au- Ag-Cu-Zn, Ag-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, , At least one of Au-Ag-Cu, Cu-Cu2O, Cu-Zn, Cu-P, Ni-B, Ni-Mn-Pd, Ni-P and Pd-Ni. Do not. The support layer 178 includes a conductive substrate. The support layer 178 may be a base substrate or a conductive support member and may be at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten have. The support layer 178 may be a carrier wafer and may be a substrate such as Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN. Alternatively, the support layer 178 may be formed of a conductive sheet.

The first semiconductor layer 41 may convert the wavelength of the first light L1 and emit the second light L2. The semiconductor element emits light of an infrared wavelength. The first light L1 emitted from the active layer 51 in the semiconductor device includes a wavelength of 400 nm or less, for example, a wavelength in the range of 100 nm to 380 nm or 300 nm to 380 nm, and the light reflected by the reflective layer 152 is directly And may include traveling light. The second light L2 that is wavelength-converted by the first semiconductor layer 41 may have a wavelength difference of 1000 nm or more with respect to the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps.

Fig. 7 is a second example in which electrodes are disposed in the semiconductor device of Fig. In describing Fig. 7, the same parts as those described above are referred to above and can be selectively applied. 7 is a structure in which the substrate and the buffer layer of Fig. 1 are removed and arranged.

7, a semiconductor device includes a second electrode 150A and a light emitting structure 31-71, and a first conductive semiconductor layer 35 is formed on the first conductive semiconductor layer 35 of the light emitting structure 31-71. And an electrode 171 are disposed. The first electrode 171 may be a pad and may be disposed on the first conductive semiconductor layer 35 through a recess 31B of the conductive semiconductor layer 31. [

The second electrode 150A may include a conductive layer 148, a reflective layer 152, a diffusion layer 154, and a support layer 156. The material and construction of the conductive layer 148, the reflective layer 152, and the diffusion layer 154 will be described with reference to the description of FIG. The diffusion layer 154 may be a layer joining two metal layers, but is not limited thereto.

The support layer 156 may be at least one of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), and copper-tungsten have. The support layer 156 may be a carrier wafer such as Si, Ge, GaAs, ZnO, SiC, SiGe, Ga ₂ O ₃ , GaN.

1 and 7, the first semiconductor light L1 may be wavelength-converted by the first semiconductor layer 41 to be emitted as the second light L2. The semiconductor element emits light of an infrared wavelength. The first light L1 emitted from the active layer 51 in the semiconductor device includes a wavelength of 400 nm or less, for example, a wavelength in the range of 100 nm to 380 nm or 300 nm to 380 nm, and the light reflected by the reflective layer 152 is directly And may include traveling light. The second light L2 that is wavelength-converted by the first semiconductor layer 41 may have a wavelength difference of 1000 nm or more with respect to the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps.

FIG. 8 is a second example in which electrodes are arranged in the semiconductor device of FIG. In the description of Fig. 8, the same parts as those described above are referred to above, and can be selectively applied. The structure of FIG. 8 is a structure in which the substrate, the buffer layer, and the conductive semiconductor layer of FIG. 3 are removed and arranged.

8, the semiconductor device includes a second electrode 150A and a light emitting structure 41-71, and a first conductive semiconductor layer 35A is formed on the first conductive semiconductor layer 35A of the light emitting structure 41-71. And an electrode 171 are disposed. The first electrode 171 may be a pad and may be disposed on the first conductive semiconductor layer 35A through a recess 45 of the conductive semiconductor layer 31. [

3 and 8, the first semiconductor light L1 may be wavelength-converted by the first semiconductor layer 41 to be emitted as the second light L2. The semiconductor element emits light of an infrared wavelength. The first light L1 emitted from the active layer 51 in the semiconductor device includes a wavelength of 400 nm or less, for example, a wavelength in the range of 100 nm to 380 nm or 300 nm to 380 nm, and the light reflected by the reflective layer 152 is directly And may include traveling light. The second light L2 that is wavelength-converted by the first semiconductor layer 41 may have a wavelength difference of 1000 nm or more with respect to the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps.

FIG. 9 is a second example in which electrodes are disposed in the semiconductor device of FIG. 3, and FIG. 10 is a cross-sectional view taken along the A-A line of the semiconductor device of FIG.

9 and 10, a semiconductor device includes a plurality of light emitting regions A1 to A4 and a plurality of light emitting regions A1 to A4, each having an electrode pattern E1, E2, and E3 on the outside of the plurality of light emitting regions A1 to A4, One electrode 171 may be disposed. The light-emitting regions A1-A4 may have a top view shape in a circular shape or a polygonal shape. The light emitting regions A1 to A4 may be separated or separated by the electrode patterns E1, E2, and E3. The light-emitting regions A1-A4 may be divided into regions by the first semiconductor layer 41. A portion of the first electrode 171 may be disposed as a pad 171A and the pad 171A may be wider than the pattern width of the electrode patterns E1, E2, and E3. The first semiconductor layer 41 may include a recess 46 and the electrode patterns E1, E2, and E3 may be disposed on the recesses 46. Referring to FIG.

The semiconductor device includes a first conductivity type semiconductor layer 35A disposed between the active layer 51 and the first semiconductor layer 41. The first conductivity type semiconductor layer 35A is formed on the first conductivity type semiconductor layer 35A with electrode patterns E1, E3) may be disposed. Since the first semiconductor layer 41 is provided in an open form on the surface of the semiconductor device, the first light L1 of the active layer 51, for example, ultraviolet light is wavelength-converted and emitted as the second light L2 .

 The first semiconductor layer 41 may convert the wavelength of the first light L1 and emit the second light L2. The semiconductor element emits light of an infrared wavelength. The first light L1 emitted from the active layer 51 in the semiconductor device includes a wavelength of 400 nm or less, for example, a wavelength in the range of 100 nm to 380 nm or 300 nm to 380 nm, and the light reflected by the reflective layer 152 is directly And may include traveling light. The second light L2 that is wavelength-converted by the first semiconductor layer 41 may have a wavelength difference of 1000 nm or more with respect to the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps.

<Semiconductor Device Package>

11 is an example of a package having the semiconductor element of Fig. 11 is a view showing a semiconductor device package having the semiconductor element of FIG. The semiconductor device of Fig. 11 may have the electrode disclosed in the embodiment, and is provided in the form of a flip chip.

11, a semiconductor device package includes a support member 110, a reflective member 111 having a cavity 112 on the support member 110, a reflective member 111 disposed on the support member 110 and within the cavity 112 A semiconductor device 103 according to an embodiment, and a transparent window 115 on the cavity 112.

The semiconductor element 103 converts the ultraviolet wavelength into an infrared wavelength and emits the ultraviolet wavelength by the first semiconductor layer 41 disclosed in the embodiment. 1, the first light L1 emitted from the active layer 51 includes a wavelength of 400 nm or less, for example, in the range of 100 nm to 380 nm or 300 nm to 380 nm, and the first semiconductor layer 41, The second light L2 that has been wavelength-converted by the first light L1 may have a wavelength difference of 1000 nm or more than the first light L1. The second light L2 may emit a wavelength in the range of 1100 nm to 2000 nm or a wavelength in the range of 1500 nm to 1600 nm. The second light L2 may emit near-infrared light or a wavelength of 1520 nm to 1560 nm. Such a semiconductor device can be implemented in a chip and applied to industrial, industrial, military, medical lamps.

The support member 110 may be a resin type printed circuit board (PCB), a silicon type such as silicon or silicon carbide (SiC), a ceramic type such as aluminum nitride (AlN) A polymer liquid crystal such as polyphthalamide (PPA), a metal core PCB (MCPCB) having a metal layer on the bottom, and the like. However, the present invention is not limited thereto.

The supporting member 110 includes a first metal layer 131, a second metal layer 133, a first connecting member 138, a second connecting member 139, a first electrode layer 135 and a second electrode layer 137, . The first metal layer 131 and the second metal layer 132 are spaced apart from each other on the bottom of the support member 110. The first electrode layer 135 and the second electrode layer 137 are spaced apart from each other on the upper surface of the support member 110. The first connection member 138 may be disposed on the inner side or the first side of the support member 110 and connects the first metal layer 131 and the first electrode layer 135 to each other. The second connection member 139 may be disposed on the inner side or the second side of the support member 110 and connects the second metal layer 133 and the second electrode layer 137 to each other.

The first metal layer 131, the second metal layer 133, the first electrode layer 135 and the second electrode layer 137 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni) And may be formed of at least one of gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag) A single metal layer or a multilayer metal layer. The first connecting member 138 and the second connecting member 139 include at least one of a via, a via hole, and a through hole.

 The reflective member 111 may be disposed on the support member 110 around the cavity 112 to reflect the ultraviolet light emitted from the semiconductor device 101.

The reflective member 111 may be a resin type printed circuit board (PCB), a silicon type such as silicon or silicon carbide (SiC), a ceramic type such as AlN (AlN) and a liquid crystal polymer such as polyphthalamide (PPA). However, the material is not limited to these materials. The supporting member 110 and the reflecting member 111 may include a ceramic-based material. The ceramic-based material is characterized in that heat radiation efficiency is higher than that of a resin material.

The semiconductor device 103 may be disposed on the first and second electrode layers 135 and 137 or on the second electrode layer 137 or on the support member 110. The semiconductor device 103 may be bonded to the first and second electrode layers 135 and 137 in a flip chip manner. The semiconductor device 103 is electrically connected to the first electrode layer 135 and the second electrode layer 137. The semiconductor device 103 may be connected by a wire in the case of the structure of FIG. The semiconductor element 101 may emit ultraviolet light or emit light having a different wavelength when the phosphor layer is disposed on the semiconductor element 101.

The transparent window 115 is disposed on the cavity 112 and emits a peak wavelength emitted from the semiconductor element 101. [ The transparent window 115 may include a glass material, a ceramic material, or a light-transmitting resin material. An optical lens or a phosphor layer may be further disposed on the cavity 112, but the present invention is not limited thereto. The semiconductor element or the semiconductor element package according to the embodiment can be applied to a light unit. The light unit may be an assembly having one or more semiconductor elements or semiconductor device packages, and may include an ultraviolet lamp.

The semiconductor device may include a laser diode in addition to the above-described device. The laser diode may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure, like the light emitting element. Then, electro-luminescence (electroluminescence) phenomenon in which light is emitted when an electric current is applied after bonding the p-type first conductivity type semiconductor and the n-type second conductivity type semiconductor is used, And phase. That is, the laser diode can emit light having one specific wavelength (monochromatic beam) with the same phase and in the same direction by using a phenomenon called stimulated emission and a constructive interference phenomenon. It can be used for optical communication, medical equipment and semiconductor processing equipment.

As the light receiving element, a photodetector, which is a kind of transducer that detects light and converts the intensity of the light into an electric signal, is exemplified. As such a photodetector, a photodiode (e.g., a PD with a peak wavelength in a visible blind spectral region or a true blind spectral region), a photodiode (e.g., a photodiode such as a photodiode (silicon, selenium), a photoconductive element (cadmium sulfide, cadmium selenide) , Photomultiplier tube, phototube (vacuum, gas-filled), IR (Infra-Red) detector, and the like.

In addition, a semiconductor device such as a photodetector may be fabricated using a direct bandgap semiconductor, which is generally excellent in photo-conversion efficiency. Alternatively, the photodetector has a variety of structures, and the most general structure includes a pinned photodetector using a pn junction, a Schottky photodetector using a Schottky junction, and a metal-semiconductor metal (MSM) photodetector have.

The photodiode, like the light emitting device, may include the first conductivity type semiconductor layer having the structure described above, the active layer, and the second conductivity type semiconductor layer, and may have a pn junction or a pin structure. The photodiode operates by applying reverse bias or zero bias. When light is incident on the photodiode, electrons and holes are generated and a current flows. At this time, the magnitude of the current may be approximately proportional to the intensity of the light incident on the photodiode.

A photovoltaic cell or a solar cell is a type of photodiode that can convert light into current. The solar cell, like the light emitting device, may include the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer having the above-described structure.

In addition, it can be used as a rectifier of an electronic circuit through a rectifying characteristic of a general diode using a p-n junction, and can be applied to an oscillation circuit or the like by being applied to a microwave circuit.

In addition, the above-described semiconductor element is not necessarily implemented as a semiconductor, and may further include a metal material as the case may be. For example, a semiconductor device such as a light receiving element may be implemented using at least one of Ag, Al, Au, In, Ga, N, Zn, Se, P, or As, Or may be implemented using a doped semiconductor material or an intrinsic semiconductor material.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

21: substrate
25: buffer layer
31: Conductive semiconductor layer
35, 35A: a first conductivity type semiconductor layer
41, 65: a first semiconductor layer
51:
61, 62: electron blocking layer
71, 72: second conductivity type semiconductor layer

Claims (13)

A first conductive semiconductor layer;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer;
And a first semiconductor layer disposed in at least one of a region between the active layer and the first and second conductive semiconductor layers,
Wherein the first semiconductor layer includes a dopant for converting the first light emitted from the active layer into an infrared wavelength. A first conductive semiconductor layer;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer;
And a first semiconductor layer spaced apart from the active layer by a distance from the first conductive type semiconductor layer,
Wherein the first semiconductor layer has a plurality of layers having different semiconductors and one of the plurality of layers has a dopant that excites the first light emitted from the active layer with a wavelength difference of 1000 nm or more and emits a second light . 3. The semiconductor device of claim 1 or 2, wherein the first semiconductor layer comprises a first layer having a first dopant and a second layer having a second dopant over the first layer,
And the second dopant is a dopant of the first semiconductor layer. The semiconductor device according to claim 1 or 2, wherein the dopant comprises erbium (Er). The semiconductor device according to claim 1 or 2, wherein the first conductivity type semiconductor layer includes an n-type semiconductor layer, and the first semiconductor layer is disposed between the active layer and the first conductivity type semiconductor layer. 4. The semiconductor device according to claim 3, wherein the first semiconductor layer includes a superlattice structure in which the first layer and the second layer are alternately repeated,
Wherein the bandgap of the second layer is narrower than the bandgap of the first layer. The semiconductor device according to claim 3, wherein the first conductivity type semiconductor layer and the first semiconductor layer have recesses therein. 4. The semiconductor device of claim 3, wherein the concentration of the second dopant added to the second layer is higher than the concentration of the first dopant added to the first layer. The method of claim 3,
Wherein the first layer comprises an AlGaN-based semiconductor,
And the second layer includes GaN or InGaN semiconductor. The method of claim 3,
Wherein a thickness of the first semiconductor layer is larger than a wavelength emitted from the active layer and smaller than a wavelength emitted from the first semiconductor layer. The method of claim 3,
The active layer emits ultraviolet light in the range of 300 nm to 380 nm,
Wherein the first semiconductor layer converts into a wavelength in the range of 1100 nm to 2000 nm. The light emitting device according to claim 1, further comprising an electron blocking layer between the active layer and the second conductivity type semiconductor layer,
And the first semiconductor layer is disposed between the electron blocking layer and the second conductivity type semiconductor layer. A body having a cavity;
A semiconductor element disposed in the cavity;
A transparent window on the cavity,
A first conductive semiconductor layer;
An active layer on the first conductive semiconductor layer;
A second conductive semiconductor layer on the active layer;
And a first semiconductor layer disposed in at least one of a region between the active layer and the first and second conductive semiconductor layers,
Wherein the first semiconductor layer includes a dopant for converting light emitted from the active layer into an infrared wavelength,
Wherein the dopant comprises erbium,
Wherein the active layer emits ultraviolet light.

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