KR20170132243A - 신규한 유리 - Google Patents

신규한 유리 Download PDF

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Publication number
KR20170132243A
KR20170132243A KR1020177030874A KR20177030874A KR20170132243A KR 20170132243 A KR20170132243 A KR 20170132243A KR 1020177030874 A KR1020177030874 A KR 1020177030874A KR 20177030874 A KR20177030874 A KR 20177030874A KR 20170132243 A KR20170132243 A KR 20170132243A
Authority
KR
South Korea
Prior art keywords
glass
zro
less
composition
strain point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020177030874A
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English (en)
Korean (ko)
Inventor
마틴 제임스 홀슬리
쇼나 테일러
Original Assignee
필킹톤 그룹 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 필킹톤 그룹 리미티드 filed Critical 필킹톤 그룹 리미티드
Publication of KR20170132243A publication Critical patent/KR20170132243A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • H01L31/04—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/804—Materials of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/807—Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Photovoltaic Devices (AREA)
KR1020177030874A 2015-03-26 2016-03-23 신규한 유리 Withdrawn KR20170132243A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1505096.6A GB201505096D0 (en) 2015-03-26 2015-03-26 Glass
GB1505096.6 2015-03-26
PCT/GB2016/050815 WO2016151324A1 (en) 2015-03-26 2016-03-23 Novel glasses

Publications (1)

Publication Number Publication Date
KR20170132243A true KR20170132243A (ko) 2017-12-01

Family

ID=53052424

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177030874A Withdrawn KR20170132243A (ko) 2015-03-26 2016-03-23 신규한 유리

Country Status (8)

Country Link
US (1) US20180099896A1 (enExample)
EP (1) EP3274310B1 (enExample)
JP (1) JP6655629B2 (enExample)
KR (1) KR20170132243A (enExample)
CN (1) CN107531549A (enExample)
BR (1) BR112017020618A2 (enExample)
GB (1) GB201505096D0 (enExample)
WO (1) WO2016151324A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201505097D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
GB201505101D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
GB201505091D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
KR102752872B1 (ko) 2018-11-26 2025-01-09 오웬스 코닝 인텔렉츄얼 캐피탈 엘엘씨 향상된 탄성 계수를 갖는 고성능 섬유 유리 조성물
EP3887328A2 (en) 2018-11-26 2021-10-06 Owens Corning Intellectual Capital, LLC High performance fiberglass composition with improved specific modulus
CN121399073A (zh) * 2023-06-21 2026-01-23 肖特股份有限公司 用于显示设备的具有低Al2O3含量的可离子交换玻璃

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4192689A (en) * 1978-05-30 1980-03-11 Ppg Industries, Inc. Ion exchange strengthening of soda-lime-silica glass
DE19680966T1 (de) * 1995-09-28 1998-01-08 Nippon Electric Glass Co Alkalifreies Glassubstrat
US6060168A (en) * 1996-12-17 2000-05-09 Corning Incorporated Glasses for display panels and photovoltaic devices
FR2758550B1 (fr) * 1997-01-17 1999-02-12 Saint Gobain Vitrage Compositions de verre silico-sodo-calcique et leurs applications
WO1998049111A1 (en) * 1997-04-29 1998-11-05 Pilkington Plc Glass compositions used in plasma displays
DE19906240A1 (de) * 1999-02-15 2000-08-17 Schott Glas Hochzirkoniumoxidhaltiges Glas und dessen Verwendungen
JP2001076336A (ja) * 1999-09-08 2001-03-23 Hoya Corp 情報記録媒体用ガラス基板およびそれを用いた情報記録媒体
JP4389257B2 (ja) * 2000-03-06 2009-12-24 日本電気硝子株式会社 フラットパネルディスプレイ装置用ガラス基板
CN103121796B (zh) * 2006-02-10 2017-03-29 康宁股份有限公司 具有高的热稳定性和化学稳定性的玻璃组合物及其制备方法
JP2010100440A (ja) * 2007-02-08 2010-05-06 Nippon Sheet Glass Co Ltd ソーダ石灰系ガラス組成物
GB0810525D0 (en) * 2008-06-09 2008-07-09 Pilkington Group Ltd Solar unit glass plate composition
EP2346085A1 (en) * 2008-10-31 2011-07-20 Asahi Glass Company Limited Solar cell
WO2011035889A1 (de) * 2009-09-25 2011-03-31 Schott Ag Alumosilikatgläser mit hoher thermischer beständigkeit und niedriger verarbeitungstemperatur
CN102718404B (zh) * 2012-02-24 2014-12-10 河南安彩高科股份有限公司 一种高应变点硅酸盐玻璃及其应用
GB201505097D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
GB201505101D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass
GB201505091D0 (en) * 2015-03-26 2015-05-06 Pilkington Group Ltd Glass

Also Published As

Publication number Publication date
GB201505096D0 (en) 2015-05-06
US20180099896A1 (en) 2018-04-12
JP6655629B2 (ja) 2020-02-26
EP3274310A1 (en) 2018-01-31
CN107531549A (zh) 2018-01-02
JP2018510836A (ja) 2018-04-19
EP3274310B1 (en) 2019-05-08
BR112017020618A2 (pt) 2018-06-26
WO2016151324A1 (en) 2016-09-29

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20171025

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination