BR112017020618A2 - vidro, folha de vidro, substrato de vidro e célula fotovoltaica - Google Patents
vidro, folha de vidro, substrato de vidro e célula fotovoltaicaInfo
- Publication number
- BR112017020618A2 BR112017020618A2 BR112017020618A BR112017020618A BR112017020618A2 BR 112017020618 A2 BR112017020618 A2 BR 112017020618A2 BR 112017020618 A BR112017020618 A BR 112017020618A BR 112017020618 A BR112017020618 A BR 112017020618A BR 112017020618 A2 BR112017020618 A2 BR 112017020618A2
- Authority
- BR
- Brazil
- Prior art keywords
- glass
- glasses
- photovoltaic cell
- high temperatures
- sheet
- Prior art date
Links
- 239000011521 glass Substances 0.000 title abstract 12
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000005357 flat glass Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- KWUZCAVKPCRJPO-UHFFFAOYSA-N n-ethyl-4-(6-methyl-1,3-benzothiazol-2-yl)aniline Chemical compound C1=CC(NCC)=CC=C1C1=NC2=CC=C(C)C=C2S1 KWUZCAVKPCRJPO-UHFFFAOYSA-N 0.000 abstract 1
- 230000000704 physical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Compositions (AREA)
- Photovoltaic Devices (AREA)
Abstract
vidro, folha de vidro, substrato de vidro e célula fotovoltaica são revelados vidros tendo uma composição compreendendo os seguintes óxidos (em % em peso): sio2 de 61 a 70%, al2o3 de 0 a 9%, na2o de 10 a 13%, k2o de 0 a 1%, mgo de 2 a 6%, cao de 6 a 16 %, sro de 0 a 1%, zro2 de 2 a 15%, tio2 de 0 a 1%. os vidros podem ter um ponto de deformação superior a 570°c e boa estabilidade dimensional a altas temperaturas, tornando-os adequados para vidraças e substratos de proteção contra fogo que são processados a elevadas temperaturas, por exemplo, substratos para painéis de exibição, discos de armazenamento de informações e dispositivos semicondutores, incluindo células fotovoltaicas. as propriedades físicas dos vidros, como coeficiente de expansão térmica, densidade e índice de refração, são reveladas, assim como as temperaturas de fusão e de líquido. os vidros são adequados para fabricação pelo processo flutuante, produzindo vidro plano na forma de folhas.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB1505096.6A GB201505096D0 (en) | 2015-03-26 | 2015-03-26 | Glass |
PCT/GB2016/050815 WO2016151324A1 (en) | 2015-03-26 | 2016-03-23 | Novel glasses |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112017020618A2 true BR112017020618A2 (pt) | 2018-06-26 |
Family
ID=53052424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112017020618A BR112017020618A2 (pt) | 2015-03-26 | 2016-03-23 | vidro, folha de vidro, substrato de vidro e célula fotovoltaica |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180099896A1 (pt) |
EP (1) | EP3274310B1 (pt) |
JP (1) | JP6655629B2 (pt) |
KR (1) | KR20170132243A (pt) |
CN (1) | CN107531549A (pt) |
BR (1) | BR112017020618A2 (pt) |
GB (1) | GB201505096D0 (pt) |
WO (1) | WO2016151324A1 (pt) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201505091D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505097D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505101D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
CA3117892A1 (en) | 2018-11-26 | 2020-06-04 | Owens Corning Intellectual Capital, Llc | High performance fiberglass composition with improved elastic modulus |
JP7480142B2 (ja) | 2018-11-26 | 2024-05-09 | オウェンス コーニング インテレクチュアル キャピタル リミテッド ライアビリティ カンパニー | 改善された比弾性率を有する高性能ガラス繊維組成物 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100262116B1 (ko) * | 1995-09-28 | 2000-07-15 | 기시다 기요사쿠 | 무알칼리유리기판 |
US6060168A (en) * | 1996-12-17 | 2000-05-09 | Corning Incorporated | Glasses for display panels and photovoltaic devices |
FR2758550B1 (fr) * | 1997-01-17 | 1999-02-12 | Saint Gobain Vitrage | Compositions de verre silico-sodo-calcique et leurs applications |
AU7219898A (en) * | 1997-04-29 | 1998-11-24 | Pilkingon Plc | Glass compositions used in plasma displays |
DE19906240A1 (de) * | 1999-02-15 | 2000-08-17 | Schott Glas | Hochzirkoniumoxidhaltiges Glas und dessen Verwendungen |
JP2001076336A (ja) * | 1999-09-08 | 2001-03-23 | Hoya Corp | 情報記録媒体用ガラス基板およびそれを用いた情報記録媒体 |
JP4389257B2 (ja) * | 2000-03-06 | 2009-12-24 | 日本電気硝子株式会社 | フラットパネルディスプレイ装置用ガラス基板 |
CN103121796B (zh) * | 2006-02-10 | 2017-03-29 | 康宁股份有限公司 | 具有高的热稳定性和化学稳定性的玻璃组合物及其制备方法 |
JP2010100440A (ja) * | 2007-02-08 | 2010-05-06 | Nippon Sheet Glass Co Ltd | ソーダ石灰系ガラス組成物 |
GB0810525D0 (en) * | 2008-06-09 | 2008-07-09 | Pilkington Group Ltd | Solar unit glass plate composition |
WO2010050591A1 (ja) * | 2008-10-31 | 2010-05-06 | 旭硝子株式会社 | 太陽電池 |
JP5671041B2 (ja) * | 2009-09-25 | 2015-02-18 | ショット アクチエンゲゼルシャフトSchott AG | 高い耐熱性と低い作業温度を有するアルミノケイ酸塩ガラス |
CN102718404B (zh) * | 2012-02-24 | 2014-12-10 | 河南安彩高科股份有限公司 | 一种高应变点硅酸盐玻璃及其应用 |
GB201505097D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505091D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
GB201505101D0 (en) * | 2015-03-26 | 2015-05-06 | Pilkington Group Ltd | Glass |
-
2015
- 2015-03-26 GB GBGB1505096.6A patent/GB201505096D0/en not_active Ceased
-
2016
- 2016-03-23 CN CN201680024301.5A patent/CN107531549A/zh active Pending
- 2016-03-23 US US15/561,309 patent/US20180099896A1/en not_active Abandoned
- 2016-03-23 WO PCT/GB2016/050815 patent/WO2016151324A1/en active Application Filing
- 2016-03-23 KR KR1020177030874A patent/KR20170132243A/ko unknown
- 2016-03-23 BR BR112017020618A patent/BR112017020618A2/pt not_active Application Discontinuation
- 2016-03-23 EP EP16712430.4A patent/EP3274310B1/en active Active
- 2016-03-23 JP JP2017550137A patent/JP6655629B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20170132243A (ko) | 2017-12-01 |
GB201505096D0 (en) | 2015-05-06 |
EP3274310A1 (en) | 2018-01-31 |
CN107531549A (zh) | 2018-01-02 |
EP3274310B1 (en) | 2019-05-08 |
JP2018510836A (ja) | 2018-04-19 |
US20180099896A1 (en) | 2018-04-12 |
JP6655629B2 (ja) | 2020-02-26 |
WO2016151324A1 (en) | 2016-09-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR112017020618A2 (pt) | vidro, folha de vidro, substrato de vidro e célula fotovoltaica | |
JP6663532B2 (ja) | ペタライト及びリチウムシリケート構造を有する高強度ガラスセラミック | |
JP6777893B2 (ja) | 紫外線透過ガラス | |
TWI670246B (zh) | 玻璃組成物、化學強化用玻璃板、強化玻璃板及顯示用強化玻璃基板 | |
JP6791757B2 (ja) | 三次元成形のためのイオン交換可能なガラス物品 | |
BR112017027193A2 (pt) | composição de fibra de vidro, de alto desempenho, fibra de vidro e material compósito a partir da mesma. | |
JP2009057271A5 (pt) | ||
BR112018000203A2 (pt) | composição de fibra de vidro de alto módulo, fibra de vidro e material compósito da mesma | |
US20130219966A1 (en) | Method of manufacturing chemically strengthened glass plate | |
JP2019509238A (ja) | 固有の損傷抵抗を有する化学強化可能なリチウムアルミノケイ酸塩ガラス | |
SA518392116B1 (ar) | تركيبة ألياف زجاجية عالية المعامل، وألياف زجاجية ومواد مركبة منها | |
MX2011012667A (es) | Vidrio que contiene sodio formable por fusion. | |
TW201233654A (en) | Reinforced glass and reinforced glass sheet | |
BR112017027039A2 (pt) | composição de fibra de vidro de alto módulo, fibra de vidro e material compósito dela | |
WO2011146895A3 (en) | Glass substrates for high temperature applications | |
JP2014530162A5 (pt) | ||
CN106116140A (zh) | 化学强化用玻璃和化学强化玻璃以及化学强化玻璃的制造方法 | |
TW201542487A (zh) | 化學強化用玻璃及化學強化玻璃以及化學強化玻璃之製造方法 | |
BR112017023548A2 (pt) | composição de fibra de vidro de alto desempenho, fibra de vidro e material compósito do mesmo. | |
JP2013193887A (ja) | ガラス組成物、化学強化用ガラス組成物、強化ガラス物品、ディスプレイ用のカバーガラスおよび強化ガラス物品の製造方法 | |
ATE538076T1 (de) | Glaszusammensetzung mit hohem entspannungspunkt für ein substrat | |
MX2018010963A (es) | Composicion de fibra de vidrio de alto rendimiento, y fibra de vidrio y su material compuesto. | |
FR3036700B1 (fr) | Vitroceramiques du type aluminosilicate de lithium, transparentes, essentiellement incolores, affinees a l'etain, avec une microstructure amelioree et des proprietes de dilatation thermique ameliorees | |
CN103265188A (zh) | 一种抗划伤盖板玻璃 | |
TW200833626A (en) | Optical glass |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
B06U | Preliminary requirement: requests with searches performed by other patent offices: procedure suspended [chapter 6.21 patent gazette] | ||
B350 | Update of information on the portal [chapter 15.35 patent gazette] | ||
B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
B11B | Dismissal acc. art. 36, par 1 of ipl - no reply within 90 days to fullfil the necessary requirements |