KR20170104905A - Bi-directional conductive socket for testing semiconductor device, bi-directional conductive module for testing semiconductor device, and manufacturing method thereof - Google Patents

Abstract

The present invention is provided to perform a semiconductor device test without manufacturing a separate dummy board and a separate inspection circuit board. A bidirectional conductive module for the semiconductor device test according to an embodiment of the present invention includes: a substrate unit which has a bent structure in which one side faces a semiconductor device and the other side faces an inspection circuit board; a plurality of terminal pins which arranges a plurality of first conductive patterns electrically connected with each of semiconductor devices by being separated in a row at first pitch intervals between each other in one side of the substrate unit and a plurality of second conductive patterns electrically connected with each terminal of inspection circuit boards by being separated in a row at second pitch intervals larger than the first pitch intervals between each other in the other side of the substrate unit; and an elastic support unit which is connected with the substrate unit in order to elastically support the substrate unit. The terminal of the semiconductor device and the terminal of the inspection circuit board are desired to be connected electrically, in which: the plurality terminal pins are arranged in a row by separating the plurality of first conductive patterns at the first pitch intervals on one side of the substrate unit; the plurality of second conductive patterns is arranged in the substrate unit in order to be arranged in a zigzag shape by being arranged alternatively at the second pitch intervals on the other side of the substrate unit; the plurality of first conductive patters is in contact with the terminal of the semiconductor device at the first pitch interval; and the plurality of second conductive patterns is in contact with the terminal of the inspection circuit board at the second pitch intervals.

Description

TECHNICAL FIELD [0001] The present invention relates to a bidirectional conductive socket for testing semiconductor devices, a bidirectional conductive module for testing semiconductor devices, and a method of manufacturing the same. BACKGROUND OF THE INVENTION [0002] Conventionally,

The present invention relates to a bidirectional conductive socket for testing semiconductor devices, a bidirectional conductive module for testing semiconductor devices, and a method of manufacturing the same. More particularly, the present invention relates to a bidirectional conductive socket for testing semiconductor devices, Directional conductive socket for semiconductor device test that can test a semiconductor device without preparing a separate dummy board and an inspection circuit board as the pitch interval between the terminals of the semiconductor device is narrowed by widening the pitch interval of the portion, To a bidirectional conductive module and a method of manufacturing the same.

The semiconductor device is subjected to a manufacturing process and then an inspection is performed to determine whether the electrical performance is good or not. Inspection is carried out with a semiconductor test socket (or a connector or a connector) formed so as to be in electrical contact with a terminal of a semiconductor element inserted between a semiconductor element and an inspection circuit board. Semiconductor test sockets are used in burn-in testing process of semiconductor devices in addition to final semiconductor testing of semiconductor devices.

The size and spacing of terminals or leads of semiconductor devices are becoming finer in accordance with the development of technology for integrating semiconductor devices and miniaturization trends and there is a demand for a method of finely forming spaces between conductive patterns of test sockets. Therefore, conventional Pogo-pin type semiconductor test sockets have a limitation in manufacturing semiconductor test sockets for testing integrated semiconductor devices.

A technique proposed to be compatible with the integration of such semiconductor devices is to form a perforated pattern in a vertical direction on a silicon body made of a silicone material made of an elastic material and then to fill the perforated pattern with a conductive powder to form a conductive pattern PCR socket type is widely used.

Even if a PCR socket type semiconductor test socket is used, if the pitch distance between the terminals of the semiconductor elements is narrowed, for example, if the pitch distance between the terminals of the semiconductor elements is 0.3 mm, The test should proceed in the state it was manufactured. Conventionally, a semiconductor test socket having the following structure has been used for solving the manufacturing of the inspection circuit board separately.

FIG. 1 discloses a semiconductor test apparatus 1 for testing whether or not a semiconductor element is in bad condition when the pitch interval between terminals of the semiconductor element is 0.3 mm apart.

Referring to FIG. 1, a conventional semiconductor testing apparatus 1 includes a support plate 30 and a semiconductor test socket 10 of PCR socket type.

The support plate 30 supports the semiconductor test socket 10 when the semiconductor test socket 10 moves between the semiconductor element 3 and the test circuit board 7. [ Here, a main through hole (not shown) for the advance and retreat guide is formed at the center of the support plate 30, and the through holes for coupling are spaced apart from each other along the edge forming the main through hole . The semiconductor test socket 10 is fixed to the support plate 30 by a peripheral support portion 50 joined to the upper and lower surfaces of the support plate 30.

The PCR socket-type semiconductor test socket 3 has a perforated pattern formed on an insulating silicon body, and conductive patterns are formed in the vertical direction by the conductive powder 11 filled in the perforated pattern.

The conductive pattern of the semiconductor test socket 10 is brought into contact with the dummy pattern 6a provided on the dummy board 6 and electrically connected to the inspection circuit board 7. [ Here, the dummy pattern 6a electrically connects the conductive pattern of the semiconductor test socket 10 and the terminals of the inspection circuit board.

The reason for adopting the structure in which the test circuit board 7 is connected to the dummy board 6 of the conventional semiconductor test apparatus is that the pitch interval between the terminals of the test circuit board is made smaller than that of the semiconductor This is because the cost of fabricating the inspection circuit board is increased due to the pitch interval of the devices, and the production cost of the inspection circuit board increases as the pitch interval between the terminals becomes narrower.

In addition, the PCR socket has an advantage in that fine pitch can be realized. However, since the conductive powder 11 filled in the perforation pattern is caused by the pressure generated when the semiconductor element 3 is in contact with the inspection circuit board 7 There is a disadvantage in that it is restricted in the thickness formation in the vertical direction.

That is, the conductive powders 11 are brought into contact with each other by the pressure in the vertical direction, so that the conductivity is formed. When the thickness is increased, the pressure to be transmitted to the inside of the conductive powder 11 becomes weak, and conductivity may not be formed. Therefore, the PCR socket has a disadvantage that it is restricted in thickness in the height direction.

Korean Patent Laid-Open No. 10-2009-0030190 discloses a socket for inspecting a semiconductor chip.

The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a method of manufacturing a semiconductor device, It is an object of the present invention to provide a bidirectional conductive socket for testing a semiconductor device, a bidirectional conductive module for testing a semiconductor device, and a method of manufacturing the same.

According to the present invention, a plurality of terminal pins are formed on a metal plate by etching or stamping so as to be in contact with terminals of a semiconductor device and a test circuit board, A bidirectional conductive socket for testing a semiconductor device, a bidirectional conductive module for testing a semiconductor device, and a method of manufacturing the same, which can perform a test of a semiconductor device without preparing a separate dummy board and an inspection circuit board as the pitch interval between terminals of the semiconductor device is narrowed The purpose is to provide.

A bidirectional conductive module for testing a semiconductor device according to an embodiment of the present invention includes: a substrate portion having a structure in which one surface is directed toward a semiconductor element and the other surface is bent toward a test circuit substrate; A plurality of first conductive patterns spaced apart from each other at a first pitch interval and electrically connected to the terminals of the semiconductor element on one surface of the substrate portion and a plurality of second conductive patterns spaced apart from each other at a second pitch interval A plurality of terminal pins spaced in a line and provided with a plurality of second conductive patterns electrically connected to terminals of the inspection circuit board, respectively; And a plurality of terminal pins arranged on the one surface of the substrate portion in such a manner that a plurality of first conductive patterns are spaced apart from each other by a first pitch distance and a plurality The plurality of first conductive patterns are arranged in a zigzag form so that the second conductive patterns are arranged to be shifted by a second pitch distance and are arranged in a zigzag pattern so that a plurality of first conductive patterns are brought into contact with terminals of the semiconductor elements at a first pitch interval, It is preferable that the pattern is brought into contact with the terminals of the inspection circuit board at a second pitch interval to electrically connect the terminals of the semiconductor element and the terminals of the inspection circuit board.

In an embodiment of the present invention, the substrate portion is formed by plated with an insulating sheet having a flexible structure, and the first conductive pattern and the second conductive pattern patterned on the substrate portion are electrically connected to each other by a plating process or a conductive line .

In an embodiment of the present invention, the plurality of terminal pins may include a first bump formed on the surface of the plurality of first conductive patterns in an opaque manner; And a second bump formed on the surface of the plurality of second conductive patterns in an opaque manner, wherein the first bump and the second bump are formed by the conductive powder.

In an embodiment of the present invention, the plurality of terminal pins may include a first bump formed on the surface of the plurality of first conductive patterns in an opaque manner; A second bump formed on the surface of the plurality of second conductive patterns in an opaque manner; And a plating layer which is plated on the plurality of first conductive patterns and the plurality of second conductive patterns to electrically connect the plurality of first conductive patterns to the plurality of second conductive patterns, Is preferably formed by a powdery powder.

On the other hand, the bidirectional conductive socket for semiconductor device testing comprises at least one bidirectional conductive module for testing semiconductor devices; And a housing for fixing the installation position of the at least one bidirectional conductive module for testing semiconductor devices so that the bidirectional conductive module for testing at least one semiconductor device is brought into contact with the terminals of the semiconductor element in accordance with the terminal direction of the semiconductor element Wherein the housing is coupled to the test circuit board so as to press a plurality of second conductive patterns provided on the other surface of the bidirectional conductive module for semiconductor device testing and in electrical contact with the terminals of the test circuit board, It is preferable to test whether the semiconductor element is poor or not by being electrically connected to the semiconductor element and the inspection circuit board.

A method of manufacturing a bidirectional conductive module for testing a semiconductor device according to an embodiment of the present invention includes the steps of (A) forming a plurality of first conductive patterns, which are in contact with terminals of a semiconductor element, on one surface of a substrate, Spaced apart from each other by a first pitch interval; (B) a plurality of second conductive patterns, which are in contact with the terminals of the inspection circuit board, are spaced apart from each other by a second pitch interval which is the pitch interval of the terminals of the inspection circuit board, Patterning to be arranged in a zigzag manner with respect to the array direction of the first electrode; (C) a plurality of first conductive patterns and a plurality of second conductive patterns are electrically connected by a plating process or a conductive line; (D) bending the plurality of first conductive patterns and the plurality of second conductive patterns so as to face in different directions while the substrate is brought into contact with the molding die and warped in the shape of a molding die; And (E) a step of providing an elastic supporting portion connected to the molding die mold and cured after the silicon is injected into the molding die mold to elastically support the substrate portion, The plurality of first conductive patterns are electrically connected to the terminals of the semiconductor element and the plurality of second conductive patterns are electrically connected to the terminals of the inspection circuit board to electrically connect the semiconductor elements and the inspection circuit board .

In one embodiment of the present invention, before step (A), a first insulating sheet constituting one surface of the substrate portion and a second insulating sheet constituting the other surface of the substrate portion are provided, and the first insulating sheet and the second insulating sheet are plated It is preferable to further include a step of processing.

In one embodiment of the present invention, in the step (A), on the other side of the first insulating sheet, electrically connecting one of the plurality of first conductive patterns patterned on one side of the first insulating sheet to the first conductive pattern And the first connection pattern is electrically connected to any one of the plurality of second conductive patterns when the first insulation sheet and the second insulation sheet are in contact with each other.

In one embodiment of the present invention, in the step (B), at least one of the plurality of second conductive patterns patterned on the other side of the second insulating sheet is electrically connected to one side of the second insulating sheet, At least two second connection patterns to be contacted are patterned and at least two second connection patterns are electrically connected to at least two of the plurality of first conductive patterns when the first insulation sheet and the second insulation sheet are in contact with each other desirable.

In one embodiment of the present invention, after the step (B), the conductive powder is adhered to the surface of the plurality of first conductive patterns in an opaque manner to form a first bump, and the plurality of second conductive patterns And forming the two bumps.

In one embodiment of the present invention, after the step (B), a plurality of first conductive patterns and a plurality of second conductive patterns are nickel plated; And a plurality of nickel-plated first conductive patterns and a plurality of second conductive patterns are gold-plated, wherein the plurality of first conductive patterns and the plurality of second conductive patterns are electrically connected by nickel plating and gold plating .

In an embodiment of the present invention, it is preferable that after step E, the step of laser cutting between the plurality of first conductive patterns and the plurality of second conductive patterns is further included.

A bidirectional conductive module for testing a semiconductor device according to another embodiment of the present invention includes a terminal for electrically connecting a terminal of a semiconductor device having a first pitch distance to a terminal of an inspection circuit board having a second pitch interval larger than the first pitch distance A terminal pin portion having a plurality of terminal pins; And a plurality of terminal pins, wherein one end of the plurality of terminal pins protrudes above the elastic support portion and is spaced apart from each other by a first pitch interval, and the plurality of terminal pins And the other end is bent so as to protrude to the lower portion of the elastic supporting portion so as to be spaced apart from each other by a second pitch interval at a position away from the one end of the elastic supporting portion in the outward direction of the elastic supporting portion.

In another embodiment of the present invention, it is preferable that the plurality of terminal pins have a multi-folded structure so as to have at least two inflection points.

A bidirectional conductive socket for testing a semiconductor device according to another embodiment of the present invention includes: at least one bidirectional conductive module for testing a semiconductor device; And a housing for fixing the installation position of the at least one bidirectional conductive module for testing semiconductor devices so that the bidirectional conductive module for testing at least one semiconductor device is brought into contact with the terminals of the semiconductor element in accordance with the terminal direction of the semiconductor element And the housing is coupled to the test circuit board so as to press the other end of the plurality of terminal pins provided on the other surface of the bidirectional conductive module for semiconductor device testing and in electrical contact with the terminals of the test circuit board, It is preferable to test whether the semiconductor element is poor or not by being electrically connected to the semiconductor element and the inspection circuit board.

A method of manufacturing a bidirectional conductive module for testing a semiconductor device according to another embodiment of the present invention comprises the steps of: (A) forming a metal plate on a metal plate at a position where one end faces the upper portion of the metal plate, The plurality of terminal pin patterns being patterned so as to be bent toward the bottom of the plate; (B) removing a portion of the metal plate other than the plurality of terminal pin patterns, thereby forming a plurality of terminal pins from the metal plate; And (C) providing a plurality of terminal pins connected to the mold mold, and after the silicon is injected into the mold of the mold and cured to form an elastic support portion for elastically supporting the plurality of terminal pins, The plurality of terminal pin patterns are spaced apart from each other by a first pitch interval which is a distance between the terminals of the semiconductor elements and the other ends of the plurality of terminal pin patterns are spaced apart from each other by a first pitch interval And the second pitch interval is a distance between the terminals of the inspection circuit board.

In another embodiment of the present invention, in the step (B), the remaining portions of the plurality of terminal pins except for the plurality of terminal pin patterns are removed from the metal plate by the etching process of the metal plate .

In another embodiment of the present invention, in the step (B), the remaining portions of the plurality of terminal pins, except for the plurality of terminal pin patterns, are removed from the metal plate by stamping the metal plate .

The present invention relates to a semiconductor device in which a portion of a semiconductor device which is in contact with a terminal is finely patterned and a portion in contact with the terminal of the inspection circuit board is widened by a pitch interval so that the pitch interval between terminals of the semiconductor device is narrowed The semiconductor device can be tested without affecting the semiconductor device.

According to the present invention, a plurality of terminal pins are formed on a metal plate by etching or stamping so as to be in contact with terminals of a semiconductor device and a test circuit board, thereby widening the pitch interval of a portion contacting the terminals of the test circuit board, The test of the semiconductor device can be performed without preparing a separate dummy board and an inspection circuit board.

Disclosure of the Invention The present invention has been made to solve the disadvantages of the pogo-pin type semiconductor test socket and the disadvantages of the PCR socket type semiconductor test socket and to provide a bidirectional conductive The socket can be easily assembled.

 In addition, the present invention can implement a portion of a semiconductor device that contacts a plurality of terminals and a portion that contacts a plurality of terminals of a test circuit board in a minute size in one module by using a method of patterning a conductive pattern on the FPCB Way conductive sockets for semiconductor device testing that can test very small semiconductor devices that are difficult to test in the pogo pin type or PCR socket type used for testing semiconductor devices due to the development of the technology can be easily manufactured.

In addition, the present invention can be applied to a semiconductor device having a unit module structure by patterning a plurality of conductive patterns on an FPCB having a flexible structure, instead of electrically connecting a plurality of terminals of the semiconductor element to a plurality of terminals of the inspection circuit board. The bidirectional conductive socket for testing a semiconductor device can be assembled by manufacturing the bidirectional conductive module for device testing and assembling the unit-modulated semiconductor device test bidirectional conductive module into the housing.

Accordingly, the present invention can simplify the assembling process of the bidirectional conductive socket for semiconductor device test, increase the assembly efficiency, shorten the time required for assembling, and increase the work efficiency of the operator have.

1 schematically shows a configuration diagram of a semiconductor test apparatus according to the prior art.
2 is a schematic view showing a state in which a bi-directional conductive socket for testing semiconductor devices according to an embodiment of the present invention is installed between a semiconductor element and a test circuit board.
3 is an enlarged view of a portion A in Fig.
4 schematically shows a top view of a bidirectional conductive module for testing semiconductor devices according to an embodiment of the invention.
5 schematically illustrates a perspective view of a bidirectional conductive module for testing a semiconductor device in accordance with an embodiment of the present invention.
Fig. 6 (a) schematically shows a plan view of Fig. 5, and Fig. 6 (b) schematically shows a bottom view of Fig.
7 schematically shows a cross-section of one terminal pin provided with a plurality of first conductive patterns and a plurality of second conductive patterns according to an embodiment of the present invention.
Fig. 8 (a) is a plan view as seen from above in Fig. 7, and Fig. 8 (b) schematically shows a bottom view in Fig. 7 as viewed from below.
Figure 9 schematically shows a cross-section of two terminal pins.
10 schematically shows a cross-section of a state in which a plurality of terminal pins are arranged.
Fig. 11 (a) is a top plan view of Fig. 10, and Fig. 11 (b) is a schematic bottom view of Fig. 10 viewed from below.
12A to 12E schematically show a process sequence of a method of manufacturing a bidirectional conductive module for testing semiconductor devices.
FIG. 13 is a schematic view showing an installation state in which a bi-directional conductive socket for testing semiconductor devices according to another embodiment of the present invention is installed between a semiconductor element and a test circuit board.
14 is an enlarged view of a portion B in Fig.
15 schematically shows a perspective view of a bidirectional conductive module for testing semiconductor devices according to another embodiment of the present invention.
16 schematically shows a process sequence of a method of manufacturing a bidirectional conductive module for testing semiconductor devices according to another embodiment of the present invention.

Hereinafter, a bidirectional conductive module for testing a semiconductor device, a bidirectional conductive socket for testing a semiconductor device, and a method for manufacturing a bidirectional conductive module for testing a semiconductor device according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

● 1st Example

semiconductor device  Bidirectional conductive socket for testing

Referring to FIGS. 2 and 3, a bidirectional conductive socket 100 for testing a semiconductor device according to an embodiment of the present invention will be described.

The bidirectional conductive socket 100 for testing a semiconductor device according to an embodiment of the present invention is used to electrically connect the semiconductor element 10 and the inspection circuit board 70 to test whether the semiconductor element 10 is in good condition will be.

As shown in FIG. 2, the bidirectional conductive socket 100 for semiconductor device testing is installed between the semiconductor element 10 and the inspection circuit board 70. The bidirectional conductive socket 100 for semiconductor device testing is electrically connected to the semiconductor device 10 and the inspection circuit board 70 by the bidirectional conductive module 110 for semiconductor device testing. A bidirectional conductive socket (100) for semiconductor device testing comprises a bidirectional conductive module (110) for testing at least one semiconductor device and a housing (190).

A commercially available semiconductor device 10 has various structures depending on the purpose used in electronic products. For example, the semiconductor device 10 may be a single in-line package (SIP) structure in which terminals are protruded in one direction, a small outline package (SOP) structure in which terminals are protruded in two directions, And a QFP (Quad Flat Package) structure protruded to the outside.

The structure of the semiconductor device disclosed in this embodiment is merely exemplary, and the bidirectional conductive socket 100 for testing a semiconductor device of the present invention can be used for various types and sizes Of course, be fabricated to test the semiconductor device 10 having the semiconductor device.

Since the semiconductor device 10 has various terminal arrangements, the structure of the bidirectional conductive socket 100 for semiconductor device testing can be variously changed depending on the arrangement structure of the terminals 11 of the semiconductor device. The bidirectional conductive socket 100 for testing a semiconductor device is configured such that the bidirectional conductive module 110 for testing at least one semiconductor device is assembled to the housing 190 according to the arrangement of the terminals 11 of the semiconductor element do.

The bidirectional conductive module 110 for testing a semiconductor device according to an embodiment of the present invention is a unit modularized terminal connection member used for manufacturing a bidirectional conductive socket 100 for testing semiconductor devices. The bidirectional conductive module 110 for semiconductor device testing is for electrically connecting the terminal 11 of the semiconductor element to the terminal 71 of the inspection circuit board.

The bidirectional conductive module 110 for testing a semiconductor device according to the present example has a structure in which the interval between the terminals 11 of the semiconductor element is set to 0.3 mm or less (hereinafter referred to as "first pitch interval P1"), Size semiconductor devices.

Therefore, the bidirectional conductive module 110 for testing a semiconductor device according to the present embodiment is not individually connected to each of the plurality of terminals provided in the semiconductor device 10, but a plurality of conductive patterns are patterned on the FPCB substrate And is brought into contact with the terminal 11 of the semiconductor element.

The bidirectional conductive module 110 for testing a unit modularized semiconductor device has a structure in which a plurality of terminals provided on one side of the semiconductor element 10 are electrically connected to a plurality of terminals provided at one side thereof such as the structure disclosed in the bidirectional conductive socket 100 for testing semiconductor devices described above As shown in FIG.

With this structure, the bidirectional conductive module 110 for testing a semiconductor device can be fitted into the housing 190 having a predetermined frame, thereby simplifying the assembling process of the bidirectional conductive socket 100 for semiconductor device testing.

The housing 190 is coupled to the inspection circuit board by a coupling member 191. The coupling member penetrates the housing 190 and is coupled to the inspection circuit board 70 to define the position of the housing 190 with respect to the inspection circuit board 70.

As a result, the housing 190 presses the plurality of second conductive patterns 114a, 114b, and 114c to electrically connect the plurality of second conductive patterns 114a, 114b, and 114c to the terminals 71 of the inspection circuit board. The contact can be improved.

The bidirectional conductive socket 100 for testing a semiconductor device according to the present example can be used for testing a semiconductor device without affecting the pitch interval between the terminals 71 of the inspection circuit board when the distance between the terminals 11 of the semiconductor device becomes narrow. So that the interval between the terminals of the inspection circuit board that contact the terminals 71 is widened. Hereinafter, a bidirectional conductive module for testing a semiconductor device will be described.

semiconductor device  Bidirectional conductive module for testing

Hereinafter, the configuration of the bidirectional conductive module for semiconductor device testing will be described with reference to FIGS. 3 to 11. FIG.

3 to 5, the bidirectional conductive module 110 for testing a semiconductor device according to an embodiment of the present invention includes a substrate portion 111, a plurality of terminal pins 110A and 110B, and elastic supports 119 ).

The substrate portion 111 is a portion for electrically connecting the semiconductor element 10 and the inspection circuit substrate 70. The substrate portion 111 has a flexible structure. The substrate portion 111 may be bent such that one surface thereof faces the semiconductor element 10 and the other surface thereof faces the inspection circuit board 70.

A plurality of first conductive patterns 113a, 113b, and 113c are formed on one surface of the substrate portion 111, and a plurality of second conductive patterns 113a, 113b, and 113c are formed on the other surface of the substrate portion 111, Conductive patterns 114a, 114b, and 114c are formed.

The plurality of first conductive patterns 113a, 113b, and 113c are spaced apart from each other by a first pitch distance P1. The plurality of second conductive patterns 114a, 114b, and 114c are spaced apart from each other by two pitch intervals.

The first pitch interval P1 corresponds to the pitch interval between the terminals 11 of the semiconductor element and the second pitch interval P2 corresponds to the interval between the terminals 71 of the test circuit board Corresponds to the pitch interval.

The insulating sheets 111a and 111b are made of a material capable of flexing flexibly without electricity. As the insulating sheet, for example, a PI film may be used. Because of the material properties, the insulating sheet can be shaped to be bent according to the pressure that is pressed in the test process of the semiconductor element 10. [

In this embodiment, for convenience of explanation, a plurality of first conductive patterns 113a, 113b, and 113c patterned on the substrate portion 111 and a plurality of second conductive patterns 114a, 114b, and 114c are coaxially positioned Will be described as one terminal pin. One substrate pin 111 may be provided with one terminal pin as shown in FIGS. 7 and 8, or a plurality of terminal pins 110A and 110B may be provided as shown in FIGS. 9 and 11 . In this embodiment, the number of terminal pins is adjustable in the patterning process of the substrate 111. In this embodiment, the terminal pins, the first conductive patterns 113a, 113b, and 113c, and the second conductive patterns 114a and 114b And 114c are not particularly limited and may be variously changed according to the standard of the semiconductor device according to the technological development.

The plurality of terminal pins 110A and 110B are brought into contact with the terminal 11 of the semiconductor element at a first pitch distance P1 and contact with the terminal 71 of the test circuit board at a second pitch distance P2 , And for electrically connecting the terminal 11 of the semiconductor element and the terminal 71 of the inspection circuit board.

As described above, one terminal pin is formed of a set of a plurality of first conductive patterns 113a, 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c arranged in a line on a coaxial line.

The plurality of terminal pins 110A and 110B are arranged in a row with a plurality of first conductive patterns 113a, 113b and 113c spaced apart from each other by a first pitch distance P1 from one surface of the base plate 111, A plurality of second conductive patterns 114a, 114b and 114c are arranged on the other side of the substrate 111 such that the second conductive patterns 114a, 114b and 114c are arranged in a staggered manner by a second pitch distance P2.

The plurality of first conductive patterns 113a, 113b and 113c are arranged to apply a current to the terminals of the terminals 11 of the semiconductor element when the semiconductor elements are brought into contact with the terminals 11, Section.

In this embodiment, the bidirectional conductive module for semiconductor device testing is used to increase the contact efficiency between the plurality of first conductive patterns 113a, 113b, and 113c and the terminals 11 of the semiconductor device, that is, The surfaces of the first bumps 115a, 113b and 113c are roughened to stably ensure electrical contact between the terminals 11 of the semiconductor element and the plurality of first conductive patterns 113a, 113b and 113c, Are attached to the plurality of first conductive patterns 113a, 113b, and 113c.

The first bumps 115 are stuck on the surfaces of the plurality of first conductive patterns 113a, 113b, and 113c. The first bump 115 may be formed of a conductive powder. Or the first bump 115 is formed by plating a non-conductive powder on the surfaces of the plurality of first conductive patterns 113a, 113b, and 113c and then nickel-plated and / or gold-plated to form a plurality of first conductive patterns 113a, 113b, and 113c. The formation of the plating layer on the surface of the first bump 115 is shown in Fig.

If the first bump 115 is a structure capable of stably performing electrical contact between the first conductive patterns 113a, 113b, and 113c and the terminal 11 of the semiconductor device, The surface of the first conductive patterns 113a, 113b, and 113c may be formed as a plated layer with a sharp-pointed protrusion like a crown structure.

On the other hand, in the present embodiment, the plurality of second conductive patterns 114a, 114b, and 114c are in contact with the terminals 71 of the inspection circuit board and are current-carrying portions. The plurality of second conductive patterns 114a, 114b, and 114c are provided on the other surface of the insulating sheet in the same manner as the plurality of first conductive patterns 113a, 113b, and 113c. The plurality of second conductive patterns 114a, 114b and 114c are provided on the other surface of the substrate portion 111 in a line spaced apart from each other by a second pitch distance P2 larger than the first pitch distance P1.

Second bumps 116 are formed on the plurality of second conductive patterns 114a, 114b, and 114c. In this embodiment, the second bump 116 performs the same structure and function as the first bump 115, and thus the description thereof will be omitted in order to avoid repetition of the description in this embodiment.

As shown in FIG. 6 (b), the plurality of second conductive patterns 114a, 114b, and 114c are arranged in a line in the second pitch interval P2 from one terminal pin. The plurality of second conductive patterns 114a, 114b, and 114c are electrically connected to the second conductive patterns 114a, 114b, and 114c positioned adjacent to each other in a state where the plurality of terminal pins 110A and 110B are arranged in a row. Are arranged to be shifted by the pitch interval P2 and arranged in a staggered manner.

Even when the pitch distance between the terminals 11 of the semiconductor element becomes narrow due to the structure of the bidirectional conductive module for semiconductor device test in which the pitch interval between the plurality of second conductive patterns 114a, 114b, and 114c is increased, It is not necessary to fabricate a separate inspection circuit board having the same pitch interval as the pitch interval of the terminals 11 of the semiconductor element, which is economical in terms of cost.

In this embodiment, the bidirectional conductive module 110 for testing a semiconductor device includes a plurality of first conductive patterns 113a, 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c formed on different surfaces, As shown in FIG.

In order to form such a structure, the bidirectional conductive module 110 for testing a semiconductor device has a plurality of first conductive patterns 113a, 113b, 113c and a plurality of second conductive patterns 114a, The plurality of first conductive patterns 113a, 113b, and 113c and the plurality of second conductive patterns 114a, 114b, and 114c are electrically connected to each other, Can have a connected structure.

As another example, the bidirectional conductive module for testing a semiconductor device may be formed by forming via holes 118a and 118b for communicating the first conductive patterns 113a, 113b, and 113c with the second conductive patterns 114a, 114b, and 114c, respectively A plurality of first conductive patterns 113a, 113b and 113c and a plurality of second conductive patterns 114a, 114b and 114c are connected to each other through a via hole filling plating process to form a plurality of first conductive patterns 113a 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c are electrically connected to each other.

As another example, the first conductive patterns 113a, 113b, and 113c and the plurality of second conductive patterns 114a, 114b, and 114c may be electrically connected by a conductive line. In the present invention, a conductive wire is used as the conductive line.

Through the above structure, the bidirectional conductive module 110 for testing a semiconductor device according to the present embodiment has a structure in which the first conductive patterns 113a, 113b, and 113c and the second conductive patterns 114a, 114b, The first conductive patterns 113a, 113b and 113c and the second conductive patterns 114a, 114b and 114c are electrically connected by a plating connection or a conductive line so that they are energized when a current is applied, And the current applied from the terminal 71 can be supplied to the terminal 11 of the semiconductor element.

The bidirectional conductive module 110 for testing a semiconductor device according to the present embodiment can elastically support the substrate portion 111 having a structure that is easy to bend using the elastic support portion 119 as described above.

The resilient supporting portion 119 is made of a material having a certain elasticity at the time of pressing and not allowing current to pass therethrough. In the present invention, it is assumed that the elastic supporting portion 119 is made of a silicon material. The resilient support portion 119 is configured such that when the bidirectional conductive module 110 for semiconductor device testing is applied to the bidirectional conductive socket 100 for semiconductor device testing to be used for testing of the actual semiconductor device 10, And is elastically supported. The elastic support portion 119 is preferably coupled to the substrate portion 111 so that the first bump 115 and the second bump 116 are not affected by the elastic support portion 119.

For example, the elastic supporting portion 119 may surround one surface of the substrate portion 111 excluding the plurality of first conductive patterns 113a, 113b, and 113c, and may include a plurality of second conductive patterns 114a, 114b, and 114c, May be coupled to the substrate portion 111 in a block structure surrounding another side of the substrate 111. Alternatively, the elastic portion 119 may have a block structure having a structure in which the contact surface with the substrate portion 111 has a plate-like structure, and may have a block-like structure.

semiconductor device  Method of manufacturing bidirectional conductive module for testing

Hereinafter, a method of manufacturing a bidirectional conductive module for testing a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. 7 to 12E.

A method of manufacturing a bidirectional conductive module for testing a semiconductor device according to an embodiment of the present invention includes the steps of (A) forming a plurality of first conductive patterns (113a, 113b) contacting a terminal (11) of a semiconductor element on one surface of a substrate portion And 113c are spaced apart from each other by a first pitch interval P1, which is the pitch interval of the terminals 11 of the semiconductor element, and are patterned; (B) a plurality of second conductive patterns 114a, 114b and 114c which are in contact with the terminals 71 of the inspection circuit board on the other surface of the substrate portion 111 are spaced apart from each other by a pitch interval of the terminals 71 of the inspection circuit board Patterning to be arranged in a staggered arrangement with respect to an array direction of the plurality of first conductive patterns (113a, 113b, 113c), being spaced apart from each other by a second pitch interval (P2); (C) a plurality of first conductive patterns 113a, 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c are electrically connected by a plating process or a conductive line; (D) The substrate portion 111 comes into contact with the molding die and is warped in the shape of a molding die so that a plurality of first conductive patterns 113a, 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c Are bent to face in different directions; And a step of providing an elastic supporting portion 119 for elastically supporting the substrate portion 111 by being hardened after the substrate portion 111 is connected to the molding die mold and the silicon is injected into the molding die mold .

First, a first insulating sheet 111a and a second insulating sheet 111b are prepared. The first insulating sheet 111a constitutes one surface of the substrate 111 and the second insulating sheet 111b forms the other surface of the substrate 111. [ The first insulating sheet 111a and the second insulating sheet 111b are plated. At this time, the plating treatment can be performed by copper. The first insulating sheet 111a and the second insulating sheet 111b may be made of a PI film which is a material that does not pass current.

12A, a plurality of first conductive patterns 113a, 113b, and 113c, which are in contact with the terminals 11 of the semiconductor element, are formed on the first insulating sheet 111a, Are spaced apart from each other by a first pitch interval P1 that is a pitch interval (step A). The first conductive pattern 113a, the first conductive pattern 113b, and the first conductive pattern 113c are formed on the first conductive patterns 113a, 113b, and 113c, As shown in FIG.

In step (A), on the other side of the first insulation sheet 111a, the first insulation sheet 111a is patterned and the first conductive pattern 113a, 113b, or 113c, which is one of the plurality of first conductive patterns 113a, The first connection pattern 113d electrically connected to the conductive pattern 113c is patterned. The first connection pattern 113d is preferably electrically connected to any one of the plurality of second conductive patterns 114a, 114b, and 114c when the first insulation sheet 111a and the second insulation sheet 111b are in contact with each other . In this example, the first insulating layer 111a is formed by patterning a plurality of first conductive patterns 113a, 113b, and 113c and a first connection pattern 113d on the first layer 113A, 113B, 113C, 113D, 113E, 113F). "

Next, as shown in FIG. 12B, a plurality of second conductive patterns 114a, 114b, and 114c, which are in contact with the terminals 71 of the inspection circuit board, in the second insulation sheet 111b, 113b, and 113c are spaced apart from each other by a second pitch interval P2 that is the pitch interval of the first conductive patterns 113a, 113b, and 113c (step B), and are arranged in a staggered arrangement with respect to the array direction of the plurality of first conductive patterns 113a, .

As a result, a plurality of second conductive patterns 114a, 114b, and 114c are patterned on the other side of the second insulating sheet 111b. The second conductive pattern 114a, the second conductive pattern 114b, and the second conductive pattern 114c are formed on the plurality of second conductive patterns 114a, 114b, and 114c, As shown in FIG.

Here, the 2a conductive pattern 114a is electrically connected to the 1a conductive pattern 113a, the 2b conductive pattern 114b is electrically connected to the 1b conductive pattern 113b, and the 2c conductive pattern 114c Are electrically connected to the first c conductive pattern 113c, and their electrical connection structures will be described later.

 At least one of the plurality of second conductive patterns 114a, 114b, 114c patterned on the other side of the second insulating sheet 111b is provided on one side of the second insulating sheet 111b, and at least two second conductive patterns 114a, At least two second connection patterns electrically contacting the conductive patterns 114b are patterned.

In this example, for convenience of explanation, the second connection pattern 114d is referred to as a 'second connection pattern 114d', and the second connection pattern 114b is referred to as a second connection pattern 114d, which is connected to the second conductive pattern 114b. The connection pattern will be referred to as a " second connection pattern 114e ". A plurality of second conductive patterns 114a, 114b and 114c, a second connecting pattern 114d and a second connecting pattern 114e patterned on the second insulating sheet 111B are referred to as a "second layer 114A, 114B, 114C, 114D, 114E, 114F ". In the second layer, the 2a conductive pattern is provided only on the surface facing the inspection circuit board, and the 2b conductive pattern 114e is provided only in the direction facing the first layer.

As shown in FIG. 7, one terminal pin 110A is formed by adhering one first layer 113A and the second layer 114A. 9 and 10, the plurality of terminal pins 110A, 110B, 110C, and 110D are electrically connected to the corresponding first layers 113A, 113B, 113C, and 113D and the second layer 114A , 114B, 114C, and 114D.

 7 and 9, when the first insulating sheet 111a and the second insulating sheet 111b are in contact with each other, the second connecting pattern 114d abuts on the first conductive pattern 113a, 1A conductive pattern 113a and the second conductive pattern 114a are electrically connected to each other.

The second bonding pattern 114e is electrically connected to the second bonding pattern 114b by a plating process or a conductive line and contacts the first bonding pattern 113b to form the first bonding pattern 113b and the second bonding pattern 114b. And the conductive pattern 114b is electrically connected. The second c conductive pattern 114c is in contact with the first connection pattern 113d and is electrically connected to the first c conductive pattern 113c.

The first connection pattern 113d and the second c conductive pattern 114c are electrically connected by forming a via hole in the first connection pattern 113d and the second c conductive pattern 114c, And the first connection pattern 113d and the second c conductive pattern 114c are connected by a conductive line (step C). The electrical connection between the 2a connecting pattern 114d and the 1c conductive pattern 113c is also performed in the same manner as the first connecting pattern 113d and the 2c connecting pattern.

An electrical connection 111a3 between the first c conductive pattern 113c and the first connection pattern 113d, an electrical connection 111a2 between the first b conductive pattern 113b and the first c conductive pattern 113c, And the electrical connection 111b1 of the second and third connection patterns 114a and 114b and the electrical connection 111a1 of the first and second connection patterns 114a and 114b and the electrical connection 111b1 of the second and third connection patterns 114a and 114b, The electrical connection 111b2 of the conductive pattern 114a is made by nickel plating and gold plating.

That is, a plurality of first conductive patterns 113a, 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c patterned in a copper plating layer are plated with nickel. Then, a plurality of nickel-plated first conductive patterns 113a, 113b, and 113c and a plurality of second conductive patterns 114a, 114b, and 114c are plated with gold. This is to improve the electrical conductivity of the plurality of first conductive patterns 113a, 113b, and 113c and the plurality of second conductive patterns 114a, 114b, and 114c.

Then, after the step (B) or (C), the first bumps 115 are formed by attaching the conductive powder to the surfaces of the first conductive patterns 113a, 113b, and 113c in an opaque manner. The second bumps 116 are formed by attaching the conductive powder to the surfaces of the plurality of second conductive patterns 114a, 114b, and 114c in an opaque manner.

The first bump 115 may be formed using a conductive powder as described in the present specification if it has a structure capable of stably performing electrical contact between the first conductive patterns 113a, 113b, and 113c and the terminal 11 of the semiconductor element The surface of the first conductive patterns 113a, 113b, and 113c may be formed of a plating layer having a sharp-pointed protrusion like a crown structure.

The second bump 116 may be formed of any material other than the electrically conductive powder insofar as it can stably perform electrical contact between the second conductive patterns 114a, 114b, and 114c and the terminals 71 of the inspection circuit board. Shaped plating layer may be applied.

The plurality of first conductive patterns 113a, 113b, and 113c and the plurality of second conductive patterns 114a, 114b, and 114c are electrically connected to each other in the substrate portion 111 by the above- The plurality of first conductive patterns 113a, 113b, and 113c and the plurality of second conductive patterns 114a, 114b, and 113c are formed while the substrate portion 111 is in contact with the molding die and warped in the shape of a molding die, 114c are bent in different directions (step (D)).

Next, the substrate portion 111 is connected to the mold die 50. Thereafter, silicon is injected into the mold mold 50. As the silicon injected into the molding die mold 50 is cured, the elastic supporting portion 119 is formed (step (E)).

After the step E, laser cut is performed between the plurality of first conductive patterns 113a, 113b, and 113c and between the plurality of second conductive patterns 114a, 114b, and 114c. This is to prevent electrical connection between the plurality of first conductive patterns 113a, 113b, and 113c and electrical connection between the plurality of second conductive patterns 114a, 114b, and 114c.

When the bidirectional conductive module for testing a semiconductor device manufactured in the above manner is in the form of a socket fixed to a housing and positioned between the semiconductor element and the inspection circuit board, the plurality of first conductive patterns 113a, 113b, The plurality of second conductive patterns 114a, 114b and 114c are electrically connected to the terminals 71 of the inspection circuit board to electrically connect the semiconductor elements to the inspection circuit board. .

The bidirectional conductive module for testing a semiconductor device fabricated in the above manner can be manufactured by adjusting pitch intervals of the plurality of second conductive patterns 114a, 114b, and 114c at pitch intervals of the terminals 71 of the inspection circuit board And the terminals 11 of the semiconductor elements are narrowed, it is not necessary to fabricate a separate inspection circuit board corresponding to the pitch interval between the terminals of the semiconductor elements.

In addition, the bidirectional conductive module for testing a semiconductor device fabricated in the above-described manner is obtained by finely integrating and patterning a conductive pattern capable of contacting with a plurality of terminals 11 provided on one surface of a semiconductor device, It is possible to prevent an electrical short between the terminal 11 of the semiconductor element and the terminal 71 of the inspection circuit board.

The present invention is also applicable to a method of patterning a conductive pattern on an FPCB so that a portion contacting a plurality of terminals of a semiconductor element 10 and a portion contacting a plurality of terminals 71 of an inspection circuit board 70 are formed into a fine Size semiconductor element 10 which is difficult to test in the pogo pin type or the PCR socket type which is conventionally used for testing the semiconductor element 10 due to the development of the technology It is possible to easily manufacture the bidirectional conductive socket 100 for testing a semiconductor device.

● Second Example

semiconductor device  Bidirectional conductive socket for testing

A bidirectional conductive socket 200 for testing a semiconductor device according to another embodiment of the present invention will now be described.

The bidirectional conductive socket 200 for testing a semiconductor device according to another embodiment of the present invention may be used to electrically connect the semiconductor element 10 and the inspection circuit board 70 to test whether the semiconductor element 10 is in good condition will be.

As shown in FIG. 13, a bidirectional conductive socket 200 for semiconductor device testing is installed between the semiconductor element 10 and the inspection circuit board 70. The bidirectional conductive socket 200 for semiconductor device testing is electrically connected to the semiconductor device 10 and the inspection circuit board 70 by the bidirectional conductive module 210 for semiconductor device testing. A bidirectional conductive socket (200) for semiconductor device testing comprises a bidirectional conductive module (210) for testing at least one semiconductor device and a housing (290).

The structure of the bidirectional conductive socket 200 for semiconductor device testing can be variously changed according to the arrangement structure of the terminals 11 of the semiconductor element because the terminal arrangement of the semiconductor element 10 is various.

The bidirectional conductive socket 200 for testing a semiconductor device is configured such that at least one bidirectional conductive module 210 for testing semiconductor devices is assembled to the housing 290 according to the arrangement of the terminals 11 of the semiconductor element do.

The bidirectional conductive module 210 for testing a semiconductor device according to another embodiment of the present invention is a unit modularized terminal connecting member used for manufacturing the bidirectional conductive socket 200 for semiconductor device testing. The bidirectional conductive module 210 for semiconductor device testing is for electrically connecting the terminal 11 of the semiconductor element to the terminal 71 of the inspection circuit board.

The bidirectional conductive module 210 for testing a semiconductor device according to the present example is configured such that the interval between the terminals 11 of the semiconductor element is set to 0.3 mm or less (hereinafter referred to as "first pitch interval P1"), Size semiconductor devices.

Therefore, the bidirectional conductive module 210 for testing a semiconductor device according to the present embodiment is not individually connected to each of a plurality of very small terminals provided in the semiconductor element 10, but a plurality of conductive patterns are patterned on the FPCB substrate And is brought into contact with the terminal 11 of the semiconductor element.

The bidirectional conductive modules 210 for testing a unit modular semiconductor device shown in FIG. 15 are connected to each other in a block-like structure to form an electrically connected structure in which the terminals 11 of the semiconductor device 10 are in one contact with each other Lt; / RTI >

With this structure, the bidirectional conductive module 210 for testing a semiconductor device can be fitted into the housing 290 having a predetermined frame to simplify the assembling process of the bidirectional conductive socket 200 for semiconductor device testing.

The housing 290 is joined to the inspection circuit board by a coupling member 191. The coupling member penetrates the housing 290 and is coupled to the inspection circuit board 70 to define the position of the housing 290 with respect to the inspection circuit board 70.

As a result, the housing 290 presses the other ends of the plurality of terminal pins, thereby improving the electrical contact between the plurality of terminal pins and the terminals 71 of the inspection circuit board.

The bidirectional conductive socket 200 for testing a semiconductor device according to the present example can be used for testing a semiconductor device without affecting the pitch interval between the terminals 71 of the inspection circuit board when the distance between the terminals 11 of the semiconductor device becomes narrow. So that the interval between the terminals of the inspection circuit board that contact the terminals 71 is widened. Hereinafter, a bidirectional conductive module for testing a semiconductor device will be described.

semiconductor device  Bidirectional conductive module for testing

Hereinafter, the configuration of the bidirectional conductive module 210 for testing a semiconductor device will be described with reference to FIGS. 14 to 15. FIG.

The bidirectional conductive module 210 for testing a semiconductor device according to another embodiment of the present invention includes terminal pin portions 210A and 210B and an elastic supporting portion 219. [

One end 211a of the terminal pin 210a is contacted to the terminal 11 of the semiconductor element and the other end 211b of the terminal pin 212b is connected to the terminal 71b of the inspection circuit board And is electrically connected to the semiconductor element and the inspection circuit board.

The terminal pin portions 210A and 210B are formed of a plurality of terminal pins 211, 212, and 213, respectively. The terminal pin portion generally refers to a state in which a plurality of terminal pins are aligned in a row, and the number of terminal pin portions can be variously changed according to the number of terminals of the semiconductor element.

For example, as shown in FIG. 16 (d), one terminal pin portion 210A may be resiliently supported by the elastic support portion 219, or two terminal pin portions 210A And 210B may be separately arranged on both sides of the elastic supporting portion 219. [

The plurality of terminal pins 211, 212, and 213 are made of a metal material having good current flow. The plurality of terminal pins 211, 212, and 213 are nickel-plated and gold-plated with a metal material to further improve the conductivity.

The plurality of terminal pins 211, 212 and 213 are formed such that one ends 211a, 212a and 213a of the terminal pins protrude above the elastic support portions 219 and are spaced apart from each other by a first pitch distance P1, The other ends 21b, 212b and 213b of the terminal pins 218 are spaced apart from each other by a second pitch distance P2 at positions away from the ends 211a, 212a and 213a of the terminal pins in the outward direction of the elastic supports 219 219).

The plurality of terminal pins 211, 212, and 213 have a multi-folded structure so as to have at least two inflection points, and are bent according to the pressure to be pressed during the test process of the semiconductor device 10, .

The terminal pin portions 210A and 210B are formed such that a plurality of terminal pins 211, 212 and 213 are brought into contact with the terminal 11 of the semiconductor element at a first pitch interval P1, And is electrically connected to the terminal 11 of the semiconductor element and the terminal 71 of the inspection circuit board.

Here, the first pitch interval P1 corresponds to the pitch interval between the terminals 11 of the semiconductor element, and the second pitch interval P2 is larger than the first pitch interval P1, ). ≪ / RTI >

In the present embodiment, the number of the terminal pins 211, 212, and 213 is not particularly limited, and may be variously changed according to the standard of the semiconductor device according to the technology development.

Even when the pitch interval between the terminals 11 of the semiconductor element is narrowed due to the structure of the bidirectional conductive module 210 for testing semiconductor devices in which the pitch interval between the other ends of the terminal pins 211, 212, and 213 is increased, In order to test the element 10, it is not necessary to manufacture a separate inspection circuit board 70 having a pitch interval equal to the pitch interval of the terminals 11 of the semiconductor elements, which is economical in terms of cost.

The elastic supporting portion 219 elastically supports the plurality of terminal pins 211, 212, 213 arranged in a row. The bidirectional conductive module 210 for testing a semiconductor device according to the present embodiment uses the elastic supporting portion 219 so that it is easy to bend and the first pitch interval P1 between one end and the second interval P2 between the other end is constant The terminal pin portions 210A and 210B can be elastically supported.

The elastic supporting portion 219 has a block structure surrounding the terminal pin portions 210A and 210B so that one ends 211a, 212a and 213a of the plurality of terminal pins and the other ends 211b, 212b and 213b of the plurality of terminal pins are protruded.

The elastic supporting portion 219 is made of a material having a certain degree of elasticity when pressed and not allowing current to pass therethrough. In the present invention, it is assumed that the elastic support portion 219 is made of a silicon material.

The resilient support 219 is used to electrically connect the semiconductor device 10 to the semiconductor device 10 when the bidirectional conductive module 210 for semiconductor device testing is applied to the bidirectional conductive socket 200 for semiconductor device testing, And is elastically supported.

The elastic supporting portions 219 may have a plate-like block structure for elastically supporting a plurality of terminal pins 211, 212, and 213 arranged in a row as shown in FIG. 15, and may have a plurality of terminal pins 211, 212, and 213, respectively.

semiconductor device  Method of manufacturing bidirectional conductive module for testing

A method of manufacturing a bidirectional conductive module for testing a semiconductor device according to another embodiment of the present invention comprises the steps of: (A) forming a metal plate on a metal plate at a position where one end faces the upper portion of the metal plate, A plurality of terminal pin patterns (P) are patterned so as to be bent toward the bottom of the plate; (B) removing a portion of the metal plate other than the plurality of terminal pin patterns (P) from the metal plate to form a plurality of terminal pins (211, 212, 213); (C) a plurality of terminal pins 211, 212, 213 are connected to a molding die mold, and silicon is injected into the molding die mold and cured to form a plurality of terminal pins 211, 212, And an elastic supporting portion 219 for supporting the elastic supporting portion 219 is provided.

As shown in Fig. 16 (a), a plurality of terminal pin patterns P are patterned on one metal plate 50. [

The plurality of terminal pin patterns P are arranged such that one ends of the plurality of terminal pin patterns P are spaced apart from each other by a first pitch interval P1 which is an interval between the terminals of the semiconductor elements, Are spaced apart from each other by a second pitch interval (P2) larger than the first pitch distance (P1).

The metal plate 50 is provided with a first connection pattern 51a connecting one end of the plurality of terminal pin patterns P and a second connection pattern 52a connecting the other ends of the plurality of terminal pin patterns P Patterned.

As shown in Fig. 16 (b), the remaining portions except for the plurality of terminal pin patterns P, the first connection pattern 51a and the second connection pattern 52a are etched or stamped, (50).

The portion of the metal plate 50 where the unpatterned portion is removed by the etching treatment or the stamping treatment and only the patterned portion of the plurality of terminal pin patterns P forms a plurality of terminal pins 211,

At this time, the plurality of terminal pins 211, 212, and 213 are connected to each other by the first connection portion 51 and the second connection portion 52 formed by the first connection pattern 51a and the second connection pattern 52a State. The plurality of terminal pins 211, 212, and 213 are plated with nickel and plated with gold to improve the conductivity.

Next, a plurality of terminal pins 211, 212, and 213 are installed in the molding die mold while being connected to each other by the first connecting section 51 and the second connecting section 52, and then silicon is injected into the molding die mold When cured, as shown in Fig. 16 (c), an elastic support portion 219 for elastically supporting the plurality of terminal pins 211, 212, and 213 is provided. The elastic supporting portion 219 is formed by curing silicon. The structure of the elastic supporting portion 219 can be variously changed depending on the size and structure of the molding die.

Finally, when the plurality of terminal pins 211, 212, 213 are elastically supported by the elastic supporting portion 219, the first connection portion 51 and the second connection portion 52 are connected to the plurality of terminal pins 211, 212, 213 ). ≪ / RTI > This is to cut off the electrical connection between the plurality of terminal pins 211, 212, and 213.

The bidirectional conductive module 210 for testing a semiconductor device has one ends 211a, 212a and 213a of a plurality of terminal pins and the other ends 211b, 212b and 213b of the plurality of terminal pins as shown in FIG. 16 (d) And is protruded from the elastic supporting portion 219.

The bidirectional conductive module 210 for testing a semiconductor device fabricated as described above is in the form of a socket fixed to a housing and has one end 211a, 212a, or 213a of a plurality of terminal pins when positioned between the semiconductor device and the inspection circuit board And the other ends 211b, 212b and 213b of the plurality of terminal pins are brought into contact with the terminals 71 of the inspection circuit board to electrically connect the semiconductor elements and the inspection circuit board.

The bidirectional conductive module 210 for testing a semiconductor device fabricated in the above manner has a pitch interval between the other ends 211b, 212b, and 213b of a plurality of terminal pins at pitch intervals of terminals 71 of a test circuit board It is not necessary to fabricate a separate inspection circuit board corresponding to the pitch interval between the terminals of the semiconductor elements as the pitch interval between the terminals 11 of the semiconductor elements becomes narrow.

In addition, the bidirectional conductive module 210 for testing a semiconductor device fabricated in the above-described manner is obtained by finely integrating and patterning a conductive pattern capable of contacting with a plurality of terminals 11 provided on one surface of a semiconductor device, It is possible to prevent an electrical short between the terminal 11 of the semiconductor element and the terminal 71 of the inspection circuit board due to defects.

The present invention is also applicable to a method of patterning a conductive pattern on an FPCB so that a portion contacting a plurality of terminals of a semiconductor element 10 and a portion contacting a plurality of terminals 71 of an inspection circuit board 70 are formed into a fine Size semiconductor element 10 which is difficult to test in the pogo pin type or the PCR socket type which is conventionally used for testing the semiconductor element 10 due to the development of the technology The bidirectional conductive socket 200 for semiconductor device testing can be easily manufactured.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be clear to those who have knowledge.

10: Semiconductor device 70: Inspection circuit board
100, 200: Bi-directional conductive socket for testing semiconductor devices
110, 210: Bi-directional conductive module for testing semiconductor devices
111: substrate portions 111a and 111b: insulating sheet
110A, 110B, 110C, 110D: a plurality of terminal pins
113A, 113B, 113C, 113D, 113E, and 113F:
114A, 114B, 114C, 114D, 114E, 114F: the second layer
113a, 113b, and 113c: first conductive pattern 115: first bump
114a, 114b, 114c: second conductive pattern 116: second bump
119, 219: elastic support

Claims (18)

A substrate portion having a structure in which one surface is directed toward the semiconductor element and the other surface is bent toward the test circuit substrate;
A plurality of first conductive patterns spaced at a first pitch interval from each other on one surface of the substrate portion and electrically connected to the terminals of the semiconductor device, A plurality of terminal pins spaced apart at a second pitch interval and provided with a plurality of second conductive patterns electrically connected to terminals of the inspection circuit board, respectively; And
And an elastic support portion connected to the substrate portion to elastically support the substrate portion,
Wherein the plurality of terminal pins are arranged in a line so that the plurality of first conductive patterns are spaced apart from each other by the first pitch interval on one surface of the substrate portion, and the plurality of second conductive patterns are arranged on the other surface of the substrate portion, Wherein the plurality of first conductive patterns are brought into contact with the terminals of the semiconductor element at the first pitch interval and the plurality of second conductive patterns are arranged in a staggered arrangement, Wherein the terminals of the semiconductor device are electrically connected to the terminals of the circuit board by the second pitch interval to electrically connect the terminals of the semiconductor device and the terminals of the test circuit board.
The method according to claim 1,
Wherein the substrate portion is formed by plating an insulating sheet having a flexible structure,
Wherein the first conductive pattern patterned on the substrate portion and the second conductive pattern are electrically connected by a plating process or an electrically conductive line, respectively.
The connector according to claim 1, wherein the plurality of terminal pins
A first bump formed on the surface of the plurality of first conductive patterns in an opaque manner; And
Further comprising a second bump formed on the surface of the plurality of second conductive patterns in an opaque manner, wherein the first bump and the second bump are formed by conductive powder.
The connector according to claim 1, wherein the plurality of terminal pins
A first bump formed on the surface of the plurality of first conductive patterns in an opaque manner;
A second bump formed on the surface of the plurality of second conductive patterns in an opaque manner; And
And a plating layer which is plated on the plurality of first conductive patterns and the plurality of second conductive patterns and electrically connects the plurality of first conductive patterns to the plurality of second conductive patterns,
Wherein the first bump and the second bump are formed by a non-conductive powder.
A bi-directional conductive module for testing at least one semiconductor device of claim 1; And
Directional conductive module for testing the at least one semiconductor device is brought into contact with a terminal of the semiconductor element in accordance with the terminal direction of the semiconductor element, / RTI >
Wherein the housing is coupled to the inspection circuit board so as to press a plurality of second conductive patterns provided on the other surface of the bidirectional conductive module for testing the semiconductor device and in electrical contact with the terminals of the inspection circuit board,
Wherein the bidirectional conductive module for testing the semiconductor device is electrically connected to the semiconductor element and the inspection circuit board to test whether the semiconductor element is defective or not.
(A) patterning a plurality of first conductive patterns, which are in contact with the terminals of the semiconductor element, on one surface of the substrate portion, with a first pitch interval that is the pitch interval of the terminals of the semiconductor element;
(B) a plurality of second conductive patterns, which are in contact with terminals of the inspection circuit board, are spaced apart from each other by a second pitch interval that is a pitch interval of the terminals of the inspection circuit board, on the other surface of the substrate portion, Patterning the first conductive patterns so as to be arranged in a zigzag manner with respect to the arrangement direction of the first conductive patterns;
(C) the plurality of first conductive patterns and the plurality of second conductive patterns are electrically connected by a plating process or a conductive line;
(D) bending the plurality of first conductive patterns and the plurality of second conductive patterns so that they are oriented in different directions while the substrate is brought into contact with the molding die so as to be streamlined in the shape of the molding die; And
(E) the step of providing the elastic supporting portion for elastically supporting the substrate portion, the substrate portion being connected to the molding die mold, the silicon being injected into the molding die mold and cured,
The plurality of first conductive patterns are electrically connected to the terminals of the semiconductor element and the plurality of second conductive patterns are electrically connected to the terminals of the inspection circuit board when the substrate portion is positioned between the semiconductor element and the inspection circuit board, And electrically connecting the semiconductor element and the inspection circuit board to each other, thereby electrically connecting the semiconductor element and the inspection circuit board.
7. The method of claim 6, wherein before step (A)
Further comprising a step of plating the first insulating sheet and the second insulating sheet with a first insulating sheet constituting one surface of the substrate portion and a second insulating sheet forming another surface of the substrate portion, Method for fabricating bidirectional conductive module for semiconductor device testing.
8. The method of claim 7, wherein in the step (A)
A first connection pattern electrically connected to one of the plurality of first conductive patterns patterned on one side of the first insulation sheet is patterned on the other side of the first insulation sheet,
Wherein the first connection pattern is electrically connected to any one of the plurality of second conductive patterns when the first insulation sheet and the second insulation sheet are in contact with each other.
8. The method of claim 7, wherein in the step (B)
At least two second connection patterns electrically contacting at least two second conductive patterns of the plurality of second conductive patterns patterned on the other side of the second insulation sheet are patterned on one side of the second insulation sheet ,
Wherein the at least two second connection patterns are electrically connected to at least two of the plurality of first conductive patterns when the first insulation sheet and the second insulation sheet are in contact with each other. Method of manufacturing a module.
7. The method according to claim 6, wherein after the step (B)
Further comprising the step of attaching the conductive powder to the surface of the plurality of first conductive patterns in an opaque manner to form a first bump and adhering to the surface of the plurality of second conductive patterns in a staggered manner to form a second bump Wherein the method comprises the steps of:
7. The method according to claim 6, wherein after the step (B)
The plurality of first conductive patterns and the plurality of second conductive patterns are nickel plated; And
Further comprising the step of gold plating the plurality of nickel-plated first conductive patterns and the plurality of second conductive patterns,
Wherein the plurality of first conductive patterns and the plurality of second conductive patterns are electrically connected by the nickel plating and the gold plating.
7. The method according to claim 6, wherein after the step (E)
Further comprising the step of laser cutting between the plurality of first conductive patterns and between the plurality of second conductive patterns. ≪ RTI ID = 0.0 > 11. < / RTI >
A terminal pin portion having terminals of a semiconductor element having a first pitch interval and a plurality of terminal pins electrically connecting terminals of the test circuit board having a second pitch interval larger than the first pitch interval; And
And an elastic support portion for elastically supporting the plurality of terminal pins,
Wherein the plurality of terminal pins are formed such that one end of the plurality of terminal pins protrudes upward from the elastic support portion and is spaced apart from each other at the first pitch interval and the other end of the plurality of terminal pins contacts the one end of the terminal pin Wherein the elastic supporting portion is bent so as to protrude to a lower portion of the elastic supporting portion so as to be spaced apart from each other at the second pitch interval at positions away from the elastic supporting portion.
14. The method of claim 13,
Wherein the plurality of terminal pins have a multi-folded structure so as to have at least two inflection points.
A bi-directional conductive module for testing at least one semiconductor device of claim 13; And
Directional conductive module for testing the at least one semiconductor device is brought into contact with a terminal of the semiconductor element in accordance with the terminal direction of the semiconductor element, / RTI >
Wherein the housing is coupled to the test circuit board so as to press the other end of the plurality of terminal pins provided on the other surface of the bidirectional conductive module for testing the semiconductor device and in electrical contact with the terminals of the test circuit board,
Wherein the bidirectional conductive module for testing the semiconductor device is electrically connected to the semiconductor element and the inspection circuit board to test whether the semiconductor element is defective or not.
(A) a plurality of terminal pin patterns are patterned on a metal plate so that one end is directed to the upper portion of the metal plate and the other end is bent to the lower side of the metal plate at a position away from the one end in the direction of the metal plate ;
(B) removing a portion of the metal plate other than the plurality of terminal pin patterns from the metal plate to form a plurality of terminal pins from the metal plate; And
(C) providing a plurality of terminal pins connected to a molding die mold, wherein silicone is injected into the molding die mold and cured to form an elastic supporting portion for elastically supporting the plurality of terminal pins,
In the step (A), the plurality of terminal pin patterns may be arranged such that one ends of the plurality of terminal pin patterns are spaced apart from each other by a first pitch interval which is an interval between terminals of the semiconductor elements, Wherein the second pitch spacing is a distance between the terminals of the inspection circuit board. The method of claim 1, wherein the second pitch spacing is a distance between terminals of the inspection circuit board.
17. The method according to claim 16, wherein in the step (B)
Wherein the plurality of terminal pins are formed as the remaining portions except the plurality of terminal pin patterns are removed from the metal plate by an etching process of the metal plate.
17. The method according to claim 16, wherein in the step (B)
Wherein the plurality of terminal pins are formed by stamping the metal plate so that the remaining portions except for the plurality of terminal pin patterns are removed from the metal plate.

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