KR20170085115A - Substrate treatment method and substrate treatment device - Google Patents

Abstract

A substrate processing method capable of satisfactorily removing particles adhered to an upper surface of a substrate and a substrate processing apparatus for executing the method are provided. A paddle forming step S3 for forming a liquid film F of the rinsing liquid on the upper surface of the substrate W and a member 13 including a mesh member 134 having a plurality of voids 135 are formed on the liquid film F (R) of the rinsing liquid by the interface free energy generated at the three-phase interface at which the rinsing liquid, the atmosphere (A) and the inner edge of the mesh member 134 of the member 13 intersect, And a particle capturing step S5 for capturing particles on the side surface 134b of the mesh member 134 by generating convection.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing method,

The present invention relates to a substrate processing apparatus and a substrate processing method for processing using a processing solution on a substrate. Examples of the substrate to be processed include a semiconductor substrate, a substrate for a liquid crystal display, a substrate for a plasma display, a substrate for an FED (Field Emission Display), a substrate for an optical disk, a substrate for a magnetic disk, , A photomask substrate, and the like. More particularly, the present invention relates to a substrate cleaning technique for removing foreign matter adhering to the surface of a substrate.

Conventionally, cleaning of a substrate is carried out as follows. First, a chemical liquid such as SC1 is supplied to the surface of a rotating substrate to dissolve or lift off the particles adhering to the surface of the substrate to release it (chemical liquid supply step). Next, a rinsing liquid such as pure water is supplied to the surface of the substrate to form a liquid film of the rinsing liquid on the surface of the substrate to dissolve the particles in the liquid film of the rinsing liquid (rinsing step). Finally, centrifugal force is applied to the liquid film of the rinsing liquid by rotating the substrate at high speed, and this liquid film is excluded from the surface of the substrate. Thereby, the particles are removed from the surface of the substrate together with the rinsing liquid (spin-drying step).

Japanese Patent Application Laid-Open No. 2003-209087

7 is a schematic view of the surface of the substrate before the spin-drying process is started. A convex circuit pattern W2 is formed on the upper surface W1 of the substrate W. The liquid film F of the rinsing liquid is held on the upper surface W1. Particles P separated from the upper surface W1 of the substrate W are included in the liquid film F. [

8 is a schematic view of a substrate W undergoing a spin-dry process. Since the centrifugal force acts on the upper layer region F2 of the liquid film, it is scattered and excluded from the substrate W. However, the lower layer region F1 in the vicinity of the substrate is rotated at substantially the same speed in the same direction as the substrate W interlocked with the substrate W. Therefore, the flow of the process liquid does not occur in the lower layer region F1, and the process liquid remains. As a result, the lower layer region F1 is not excluded from the substrate, and the particles P in the lower layer region F1 remain on the substrate W. [ Therefore, the substrate W can not be cleaned with high accuracy.

The present invention aims to solve the above problems. That is, it is an object of the present invention to provide a substrate processing method and a substrate processing apparatus capable of satisfactorily removing particles present in a liquid in the vicinity of the substrate.

In order to solve the above problems, a substrate processing method according to the first aspect is characterized by including: a process liquid supply step of supplying a process liquid to the one main surface of the substrate while the substrate is supported upward on one main surface; A liquid film holding step of holding a liquid film of the treatment liquid on the one main surface of the substrate; And a contact step of bringing the one surface into contact with the upper surface of the liquid film.

The substrate processing method according to the second aspect is the substrate processing method according to the first aspect, wherein at least two of the plurality of first openings are in contact with the upper surface of the liquid film in the contacting step.

The substrate processing method according to the third aspect is the substrate processing method according to the first or second aspect, wherein the member is heated in the contacting step.

The substrate processing method according to the fourth aspect is the substrate processing method according to any one of the first to third aspects, wherein the height position of the member is adjusted according to the thickness of the liquid film in the contacting step.

A substrate processing apparatus according to a fifth aspect of the present invention is a substrate processing apparatus including a substrate supporting section for supporting a substrate upward from a main surface thereof, a processing liquid supply section for supplying the processing liquid to the main surface of the substrate supported by the substrate supporting section, A member having one surface on which one opening is formed and another surface on which one or more second openings communicating with the plurality of first openings are formed; a member moving section for moving the member; And a control unit for controlling the member moving unit to contact one surface of the member with the upper surface of the liquid film.

The substrate processing apparatus according to the sixth aspect is the substrate processing apparatus according to the fifth aspect, wherein the member includes a flat plate having a plurality of through holes penetrating in the thickness direction.

The substrate processing apparatus according to the seventh aspect is the substrate processing apparatus according to the fifth aspect, wherein the member includes a mesh member having a plurality of air gap portions communicating in the thickness direction.

The substrate processing apparatus according to the eighth aspect is the substrate processing apparatus according to any one of the fifth to seventh aspects, further comprising an application unit for applying a voltage to the member, .

The substrate processing apparatus according to the ninth aspect is the substrate processing apparatus according to any one of the fifth to eighth aspects, further comprising a member cleaning section for cleaning the member.

According to another aspect of the present invention, there is provided a substrate processing method for performing a substrate processing in a predetermined atmosphere, comprising: supplying a processing liquid to an upper surface of the substrate while holding the substrate in a substantially horizontal state; A liquid film holding step of holding a liquid film of the processing liquid on the upper surface of the substrate; and a flat plate contacting step of bringing the flat plate having the plurality of through holes into contact with the liquid film.

According to this aspect, the flat plate is brought into contact with the liquid film in the flat plate contacting step. At this time, convection flow from the vicinity of the substrate to the liquid surface is formed by the interface free energy generated at the three-phase interface where the inner edges of the treatment liquid, the atmosphere and the through holes intersect. By this convection, the treatment liquid in the vicinity of the substrate moves to the surface of the liquid film and comes into contact with the inner edge of the through hole. As a result, the particles in the treatment liquid are trapped on the flat plate. In this way, it is possible to efficiently remove the particles in the vicinity of the substrate which can not be excluded by the conventional spin dry.

The substrate processing method according to another aspect is characterized in that in the flat plate contacting step, the flat plate is formed so that a three-phase interface, at which the processing liquid, the atmosphere, and the inner edge of the through hole intersect, at a plurality of points on the surface of the liquid film, Wherein the substrate is brought into contact with a liquid film of the treatment liquid.

According to this aspect, since the three-phase interface occurs at a plurality of points of the liquid film, there are many points at which the treatment liquid contacts the through-hole of the flat plate. As a result, the particles can be captured more efficiently by the flat plate.

The substrate processing method according to another aspect is a substrate processing method characterized in that the flat plate is heated in the flat plate heating step.

According to this embodiment, more powerful convection can be generated in the liquid film, so that the particles can be trapped more efficiently.

The substrate processing method according to another aspect is characterized in that in the flat plate contacting step, the position of the flat plate is set in accordance with the thickness of the liquid film in the liquid film holding step.

According to this aspect, it is possible to set the position of the flat plate in the flat plate contacting step to a position corresponding to the thickness of the liquid film.

According to another aspect of the present invention, there is provided a substrate processing apparatus for performing substrate processing in a predetermined atmosphere, comprising: substrate holding means for holding the substrate in a substantially horizontal state; A process liquid supply means for supplying a liquid to the liquid film and forming a liquid film of the process liquid to supply the liquid to the liquid film, and a mesh plate having a plurality of through holes formed thereon, A flat plate moving means for moving the flat plate to move the flat plate to a position in contact with the liquid film by controlling the flat plate moving means after the liquid film of the processing liquid is formed, And a control means for carrying out a control of attaching and catching the wafer on the side face.

According to this aspect, the treatment liquid in the vicinity of the substrate moves to the surface of the liquid film and contacts the inner edge of the through hole of the mesh member. As a result, the particles in the treatment liquid are trapped on the flat plate. This makes it possible to efficiently remove particles in the vicinity of the substrate, which can not be excluded from the conventional spin dry furnace.

According to the invention of each mode, it is possible to satisfactorily remove particles in the vicinity of the substrate.

1 is a schematic diagram showing a configuration of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a plan view of the member 13. Fig.
3 is a schematic cross-sectional view of the member 13 taken along the line III-III in FIG.
4 is a flow chart for explaining the substrate cleaning process.
5 is a schematic diagram for explaining the operation of the present invention.
6 is a plan view of a member 13A according to a modification.
7 is a schematic diagram for explaining the problems of the prior art.
8 is a schematic diagram for explaining the problems of the prior art.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings.

1 is a sectional view schematically showing the configuration of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 1 includes a substrate rotating mechanism 2 for rotating and holding a substrate W as an example of a substrate in a substantially horizontal posture, A liquid supply mechanism 3 for selectively supplying a chemical liquid and a rinse liquid to the surface (surface) of the casing 1, and a casing 1a. The casing 1a is provided with a substrate rotating mechanism 2, a liquid supplying mechanism 3, an arm 11 (described later), a nozzle moving mechanism 12 (described later), an arm 14 15) (to be described later), and an absence cleaning section 17 (described later).

As the substrate rotating mechanism 2, for example, a clamping type is adopted. More specifically, the substrate rotating mechanism 2 includes a motor 4, a spin shaft 5 integrated with the drive shaft of the motor 4, and a disk- A spin base 6 and a plurality of pinching members 7 formed at substantially equal angular intervals at a plurality of points on the circumferential edge of the spin base 6.

The substrate W can be sandwiched by the plurality of sandwiching members 7 in a substantially horizontal posture. When the motor 4 is driven in this state, the driving force causes the substrate W to rotate around the central axis of the spin shaft 5 with the spin base 6 maintained in a substantially horizontal posture can do.

The substrate rotating mechanism 2 functions as a substrate supporting portion for supporting the substrate W upwardly from one main surface. The mode of supporting the substrate W may be an aspect of suction and recognition in which the lower surface of the substrate W is vacuum-sucked in addition to the above-described mode of the narrowed-down mode. Also, the posture of the substrate W to be supported is not limited to the strict horizontal posture, but may be inclined posture from horizontal. Particles in the vicinity of the substrate W can be efficiently removed by the substrate processing method described later, provided that the liquid film of the treatment liquid is held on the upper surface of the substrate W. [ Therefore, the tolerance of the inclination of the substrate W is determined by the lyophilicity of the substrate W with respect to the processing liquid and the viscosity of the processing liquid.

The liquid supply mechanism 3 includes a nozzle 8, a supply pipe 9a connected to the nozzle 8, a branch pipe 9b and a branch pipe 9c connected to the supply pipe 9a, A valve 10b interposed in the intermediate portion, and a valve 10c interposed in the middle of the branch pipe 9c. A chemical liquid such as a cleaning liquid is supplied from the chemical liquid supply means (not shown) to the paper tube 9b. A rinsing liquid such as DIW is supplied from the rinsing liquid supply means (not shown) to the paper tube 9c. The chemical solution and the rinsing liquid can be selectively supplied toward the nozzle 8 by opening one of the valve 10b and the valve 10c and abolishing the other.

In this embodiment, the rinsing liquid is used as a treatment liquid to be contacted to the member 13 described later. Therefore, the liquid supply mechanism 3 functions as a processing liquid supply portion for supplying the processing liquid to the upper surface of the substrate W supported by the substrate supporting portion.

The nozzle 8 is attached to the distal end of the arm 11. The arm 11 extends horizontally above the substrate rotating mechanism 2. [ To the arm 11, a nozzle moving mechanism 12 including a motor and the like is coupled. The nozzle moving mechanism 12 can swing the arm 11 in the horizontal plane around the axis set on the side of the substrate rotating mechanism 2. [ As the arm 11 swings, the nozzle 8 horizontally moves above the substrate rotating mechanism 2. [

A member (13) is formed above the substrate rotating mechanism (2). The member 13 is a circular member having an outer diameter slightly smaller than that of the substrate W, and a plurality of air gap portions 135 (FIG. 2 described later) are formed. On the upper surface of the member (13), a protrusion (133) is fixed. The member 13 is mounted so as to be freely attached to and detached from the distal end portion of the arm 14 extending horizontally from above the substrate rotating mechanism 2 via the protruding portion 133. To the arm 14, a member moving section 15 including a motor and the like is coupled. The member moving section 15 can swing the arm 14 in the horizontal plane about the axis set on the side of the substrate rotating mechanism 2. [ The member 13 can be horizontally moved above the substrate rotating mechanism 2 by oscillating the arm 14 and the center of the member 13 and the standby position spaced laterally from the substrate rotating mechanism 2 can be moved And the position coinciding with the rotation center C of the substrate W on the base 6. [

The arm 14 can be moved up and down by the member moving section 15. [ The lower surface of the member 13 can be positioned at a height close to the upper surface of the substrate W by raising and lowering the member 13 as the arm 14 moves up and down. Thereby, the member 13 can be superimposed on the liquid film of the substrate W at the time of substrate processing.

The substrate processing apparatus 1 has a member cleaning portion 17. The member cleaning portion 17 is a hollow casing for cleaning the member 13 and has a loading / unloading port (not shown) for opening / closing the member 13 for loading / unloading. A plurality of sprays 18 for discharging the cleaning liquid toward the members 13 are disposed in the interior of the member cleaner 17. The member moving section 15 can move the member 13 into the interior of the member cleaner section 17 from above the substrate rotating mechanism 2 by rocking and raising the arm 14. [ When the member 13 is stored inside the member cleaner 17, the holding of the member 13 by the arm 14 is released.

The substrate processing apparatus 1 is provided with a control section 16 composed of a microcomputer. The control unit 16 controls the driving of the motor 4, the nozzle moving mechanism 12 and the member moving unit 15 according to a predetermined program and also controls the opening and closing of the valve 10b and the valve 10c . In addition, the control unit 16 controls the timing of dispensing the cleaning liquid from the spray 18.

The control unit 16 is electrically connected to each unit included in the substrate processing apparatus 1 and controls the operation of each unit of the substrate processing apparatus 1 while executing various kinds of arithmetic processing. The control unit 16 is constituted by a general computer in which, for example, a CPU, a ROM, a RAM, a storage device, and the like are interconnected via a bus line. The ROM stores basic programs and the like, and the RAM is provided as a work area when the CPU performs predetermined processing. The storage device is constituted by a nonvolatile storage device such as a flash memory or a hard disk device. The program is stored in the storage device, and the CPU as the main control section carries out the arithmetic processing according to the order described in this program, thereby realizing various functions. The program is usually stored in a memory such as a storage device and is provided in a form (program product) recorded on a recording medium such as a CD-ROM or a DVD-ROM or an external flash memory Or downloaded from an external server via the network), or may be stored in a memory such as a storage device. Further, some or all of the functions realized by the control unit 16 may be implemented in hardware by a dedicated logic circuit or the like.

In the control section, an input section, a display section, and a communication section are also connected to a bus line. The input unit is constituted by various switches, a touch panel, and the like, and accepts various input setting instructions from the operator. The display unit is constituted by a liquid crystal display, a lamp, and the like, and displays various kinds of information under the control of the CPU. The communication unit has a data communication function via a LAN or the like.

The control unit 16 controls the liquid supply mechanism 3 to form a liquid film of the treatment liquid on the upper surface of the substrate W and controls the member moving unit 15 So that the lower surface of the member 13 is brought into contact with the upper surface of the liquid film of the treatment liquid.

Fig. 2 is a plan view schematically showing the configuration of the member 13. Fig. The member 13 includes a circular frame body 131 when seen in a plan view, a support portion 132 disposed orthogonally to the radial direction of the frame body 131 in the frame body 131, And a mesh member 134 supported by the support portion 132 in the frame member 131. The support member 132 is provided with a protruding portion 133, The mesh member 134 is formed by intersecting a plurality of bars 134a.

3 is a schematic cross-sectional view of the member 13 taken along the line III-III in FIG. Each bar 134a has a rectangular shape when viewed in section and has a side surface 134b. The side surface 134b is used to capture particles in the liquid film on the substrate W. [ The side surface 134b is preferably hydrophilic so that the particles can be trapped well. The frame body 131 also has a rectangular shape when viewed in cross section and has a side surface 131b. The support portion 132 also has a rectangular shape when viewed in section and has a side surface 132b. The side face 131b of the frame body 131 and the side face 132b of the support portion 132 are used for trapping the particles as in the side face 134b of the bar 134a. The manner in which the side surface 134b is used for capturing the particles will be described in detail.

The member (13) has an upper surface formed with a lower surface having a plurality of first openings and a plurality of second openings communicating with the plurality of first openings. A plurality of air gap portions 135 are formed between the plurality of first openings and the plurality of second openings, respectively. Concretely, a point surrounded by the adjacent bar 134a and the bar 134a, a point surrounded by the bar 134a and the frame body 131, a point surrounded by the bar 134a and the support 132, The space portion 135 is formed between the upper surface and the lower surface of the member 13 at a position surrounded by the frame body 131 and the support portion 132. [

3, the width of the frame member 131 and the support member 132 is larger than the width of the bar member 134a, and the frame member 131 and the support member 132 are rigid Is high. Then, the protrusion 133 is mounted on the support portion 132 having high rigidity. Therefore, even when the protrusion 133 is mounted on the arm 14 and the member 13 is moved, the member 13 is not deformed well.

Fig. 4 is a flowchart when the substrate processing according to this embodiment is performed. It is assumed that the substrate W is already fixed to the spin base 6 and the member 13 is positioned at a standby position spaced apart from the upper side of the substrate W. [

First, the control unit 16 executes the chemical liquid processing S1. Specifically, the control unit 16 rotates the substrate W at a predetermined chemical liquid processing speed (for example, 1000 rpm). At the same time, the nozzle moving mechanism 12 is controlled to move the arm 11, and the nozzle 8 is moved to a position just above the rotation center C of the substrate W. In this state, the valve 10b is opened. As a result, the chemical liquid is supplied from the nozzle 8 toward the rotation center C of the substrate W. The supplied chemical liquid flows from the rotation center C of the substrate W toward the peripheral edge of the substrate W by the centrifugal force and treats the entire upper surface of the substrate W with chemical liquid.

After a predetermined time has elapsed since the start of the chemical liquid treatment S1, the control unit 16 executes the rinsing process S2. More specifically, the control unit 16 closes the valve 10b and opens the valve 10c. As a result, the rinsing liquid is supplied from the nozzle 8 toward the rotation center C of the substrate W. The supplied rinse liquid diffuses from the rotation center C of the substrate W toward the peripheral edge of the substrate W and is scattered to the outside from the periphery of the substrate W. [ As a result, the chemical liquid attached to the upper surface of the substrate W is replaced with the rinsing liquid.

The rinsing process S2 corresponds to a process liquid supply process for supplying the process liquid to one main surface of the substrate W in a state in which the substrate W is supported upwardly on one main surface.

After the end of the rinsing process S2, the controller 16 starts the paddle forming process S3. That is, the motor 4 is controlled to decelerate the rotation of the substrate W to stop the rotation. Or decelerating to a rotational speed (for example, 10 rpm) that can be equated with stopping. The control unit 16 continues supply of the rinse liquid to the rotation center C of the substrate W. [ As a result, the rinsing liquid stays on the upper surface of the substrate W by the surface tension of the rinsing liquid, and a liquid film on the paddles is formed. After the liquid film is formed on the upper surface of the substrate W, the control unit 16 stops the supply of the rinsing liquid to the substrate W by abolishing the valve 10c.

As described above, the paddle forming step S3 corresponds to the liquid film holding step of holding the liquid film of the treatment liquid on the upper surface of the substrate W. [

Next, the control unit 16 executes the contact step S4. More specifically, the control unit 16 controls the member moving unit 15 while holding the liquid film on the paddles on the upper surface of the substrate W until the member 13 is positioned just above the substrate W The arm 14 is moved horizontally. The control unit 16 controls the member moving unit 15 to lower the arm 14 to a height at which the lower surface of the member 13 contacts the upper surface of the liquid film of the substrate W. [

Fig. 5 is a schematic diagram showing a state in which the member 13 is in contact with the liquid film F. Fig. A liquid film F is held on the substrate W. The liquid level F12 of the liquid film F is exposed to the atmosphere A in the casing 1a of the substrate processing apparatus 1 at the gap portion 135 of the member 13. [ The lower surface of the member 13 is in liquid-tight contact with the liquid level F12. The liquid level F12 is also in contact with the side surface 134b of the member 13. A three-phase interface is formed at the contact point 134c between the liquid level F12 and the side face 134b where the liquid film F and the atmosphere A immediately above the liquid film F and the bar 134a intersect. At the contact point 134c, an interface free energy is generated. As a result, a convection S is generated between the bar 134a and the substrate W, and a liquid flow toward the vicinity of the substrate W from the liquid level F12 and a liquid flow toward the liquid level F12 from the vicinity of the substrate W are formed do. The particles contained in the treatment liquid near the upper surface of the substrate W are moved toward the liquid level F12 and contacted and captured at the contact point 134c of the side surface 134b. As the rinse liquid evaporates, the liquid level F12 falls as shown by the imaginary line F11. Thereby, the particles trapped on the side surface 134b can be sequentially left on the side surface 134b, and can be prevented from flowing into the liquid film F again.

Further, as described above, the member 13 is a circular member having an outer diameter slightly smaller than that of the substrate W. Therefore, in the contact step S4, all of the plurality of first openings of the member 13 contact the upper surface (liquid level F12) of the liquid film F, and the liquid level F12 reaches all the inner wall portions of the gap portions . As a result, the convection S is generated at all points near the first opening, and the particles are particularly efficiently captured. Further, in the contact step S4, even when not all of the plurality of first openings come into contact with the liquid level F12 as in this embodiment, at least two of the plurality of first openings of the member 13 It is preferable to contact the liquid level F12. Thereby, the convection S is generated at two or more points, and the particles are efficiently captured.

If the member 13 (e.g., bar 134a) is hot, the higher the temperature, the more evaporation of the rinsing liquid at the contact point 134c is promoted. This makes it possible to increase the amount of particles trapped at the side surface 134b because the liquid flow from the bottom to the top in the liquid film F can be made stronger. Therefore, in the contact step S4 and the particle trapping step S5, it is preferable to heat the bar 134a and maintain it at a temperature higher than the normal temperature.

For example, when the member 13 includes a heating element that generates heat by application of a voltage, the member 13 is heated by applying a voltage to the member 13 by an application unit (not shown). In such a structure of the member 13, the member 13 may include a heating wire.

If the hydrophobicity of the upper surface of the substrate W is lower (that is, the hydrophilic property is higher), the liquid film F becomes thinner. On the contrary, if the hydrophobicity is high Becomes thick. Therefore, in the contact step S4, the height position of the member 13 may be determined in accordance with the small number of the wafers W. Specifically, the height of the member 13 is set to be low when the minority degree of the upper surface of the substrate W is low, and the height of the member 13 is set to be high when the minority degree is high. As described above, in the contact step S4, the height position of the member 13 is adjusted according to the thickness of the liquid film F. When the thickness of the liquid film F fluctuates during the contact step S4 and the particle trapping step S5, the height position of the member 13 may be adjusted in accordance with the variation of the thickness of the liquid film F.

Next, the control unit 16 executes the member separation step S6. That is, the control unit 16 controls the member moving unit 15 to raise the arm 14. [ Whereby the member 13 is released from the liquid level F12. The control unit 16 then controls the member moving unit 15 to rotate the arm 14 and move the member 13 from the position immediately above the substrate W. [

Next, the control unit 16 executes the member cleaning process S7. That is, the control unit 16 controls the member moving unit 15 to lift and rotate the arm 14 to store the member 13 inside the member cleaning unit 17. [ Then, a predetermined cleaning fluid such as a cleaning liquid is sprayed from the spray 18 toward the member 13 to remove particles attached to the member 13 at the particle trapping step S5. Further, the member 13 after cleaning may be dried in the inside of the member cleaner 17.

Continuing to the member cleaning step S7 or in parallel with the member cleaning step S7, the controller 16 executes the spin-drying step S8. That is, the control unit 16 controls the motor 4 to rotate the spin base 6 at high speed. As a result, the liquid film F held on the substrate W is scattered by the centrifugal force and collected in a cup (not shown) surrounding the spin base 6. As described above, even if spin-drying is performed, it is difficult to eliminate the liquid film region (lower-layer region F1) near the substrate W by scattering from the substrate W. However, in the present embodiment, The particle capturing step S5 is executed before executing S8. As a result, the particles contained in the lower layer region F1 are removed from the substrate W. Therefore, even if the rinsing liquid in the lower layer region F1 remains on the substrate W after the spin-drying step S8, the remaining liquid contains almost no particles. Therefore, the particles do not remain on the upper surface of the substrate W. As a result, a high substrate cleaning performance can be realized.

In the above-described embodiment, the particle trapping step S5 is performed only once. However, the process from the paddle forming step S3 to the member removing step S6 may be repeated. By doing so, the particles can be removed from the liquid film F held on the substrate W a plurality of times. Thereby, the amount of particles contained in the liquid film F can be further reduced. As a result, the cleaning performance of the substrate can be improved.

In the above-described embodiment, the contact step S4 and the particle trapping step S5 are carried out while the member 13 is held by the arm 14. [ However, a fixing member for fixing the member 13 may be formed on the spin base 6 separately from the nip member 7 for fixing the substrate W. [ Thereby, the member 13 can be detached from the arm 14 and fixed on the spin base 6 in the contact step S4. Then, the particle trapping step S5 can be executed in a state in which the member 13 is left on the spin base 6.

The rinsing liquid may be supplied from the nozzle 8 toward the liquid film F in parallel with the particle trapping step S5. The number of rotations of the substrate W may be varied during the particle trapping step S5. By adding such a process, it is possible to impart vibration to the liquid film F during execution of the particle trapping step S5. As a result, the particles existing in the vicinity of the substrate W can be efficiently attached by the side surface 134b of the mesh member 134. [

In the above embodiment, the member 13 has the upper surface having the lower surface formed with the plurality of first openings and the plurality of second openings communicating with the plurality of first openings, but the present invention is not limited thereto . The member only needs to have one surface on which a plurality of first openings are formed and another surface on which at least one second opening communicating with the plurality of first openings is formed and may be different from the above embodiment.

For example, the member may have another surface on which a plurality of first openings are formed and one second opening which is in communication with the plurality of first openings, and a gap portion may be formed therein.

As another example, the member may be formed of a plurality of other surfaces (upper surface, side surface, or the like) on which one surface (e.g., lower surface) where the plurality of first openings are formed and one second opening communicating with the plurality of first openings are formed A plurality of surfaces).

In the above embodiment, the shape of the lower surface of the member (one surface contacting with the treatment liquid in the member) is flat, but the present invention is not limited thereto. The shape of the lower surface of the member may be a concavo-convex shape or a curved surface shape.

6 is a plan view of a member 13A according to a modification. In the above embodiment, the description has been given of the embodiment in which the member 13 is the mesh member 134 having the plurality of air gap portions 135 communicating in the thickness direction, but the present invention is not limited thereto. As in this modified example, the member 13A may be a flat plate 139 (so-called punching plate) formed with a plurality of through holes 135A penetrating in the thickness direction. As in the modified example, the outer shape of the member 13A in the plane view may be a square.

Industrial availability

The present invention can be effectively used in the processing of a substrate.

1: substrate processing apparatus
2: substrate rotating mechanism
3: liquid supply mechanism
4: Motor
5: Spin axis
6: spin base
7:
8: Nozzle
11, 14:
12: nozzle moving mechanism
13, 13A: member
133: protrusion
134:
134a: Bar
134b: side
134c: contact point
135:
135A: Through hole
139: Reputation
15:
16:
17: Missing government
18: Spray
F: liquid film
F12: Denomination
S: convection
W: substrate

Claims (9)

A process liquid supply step of supplying a process liquid onto the one main surface of the substrate in a state in which the substrate is supported upwardly on one main surface;
A liquid film holding step of holding a liquid film of the processing liquid on the one main surface of the substrate;
And a contact step of bringing the one surface into contact with the upper surface of the liquid film, among the members having one surface on which a plurality of first openings are formed and another surface on which at least one second opening communicating with the plurality of first openings is formed, Processing method. The method according to claim 1,
In the contacting step, at least two of the plurality of first openings contact the upper surface of the liquid film. 3. The method according to claim 1 or 2,
And heating the member in the contacting step. 4. The method according to any one of claims 1 to 3,
Wherein the height position of the member is adjusted in accordance with the thickness of the liquid film in the contacting step. A substrate supporting portion for supporting the substrate upward in a main scanning direction,
A processing liquid supply unit for supplying the processing liquid to the one main surface of the substrate supported by the substrate supporting unit,
A member having one surface on which a plurality of first openings are formed and another surface on which at least one second opening communicating with the plurality of first openings is formed;
A member moving part for moving the member,
And a control section for controlling the processing liquid supply section to form a liquid film of the processing liquid on the one main surface and to control the member moving section to bring the one surface of the member into contact with the upper surface of the liquid film. 6. The method of claim 5,
Wherein the member includes a flat plate having a plurality of through holes penetrating in the thickness direction. 6. The method of claim 5,
Wherein the member includes a mesh member having a plurality of air gap portions communicating in a thickness direction. 8. The method according to any one of claims 5 to 7,
Further comprising an application unit for applying a voltage to the member,
Wherein the member includes a heating element that generates heat in response to application of a voltage. 9. The method according to any one of claims 5 to 8,
Further comprising a member cleaner for cleaning the member.

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